Egi10003424DH - OEi Semiconductor
Egi10003424DH
Power Doubler Module
Pin
OUTLINE
PIN CONFIGURATION
FEATURES
·Excellent linearity
·Extremely low noise
·Excellent return loss properties
·High gain
·High reliability
Description
1
input
5
+VB
9
output
2.3.7.8
common
DESCRIPTION
Hybrid amplifier module operating over a
frequency range of 40 to 1000 MHz at a
voltage supply of +24V(DC) ,employing
GaAs MMIC.
QUICK REFERENCE DATA
SYMBOL
CONDITIONS
PARAMETER
MIN.
TYP.
MAX.
UNITS
Gp
power gain
f=50 MHz
31
-
33
dB
Itot
total current consumption(DC)
VB=24V
420
-
465
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
Vi
RF input voltage
-
55
dBmV
Tstg
storage temperature
-40
+100
℃
Tmb
operating mounting base temperature
-20
+90
℃
www.oei-semiconductor.com
Egi10003424DH
Power Doubler Module
CHARACTERISTICS
(Bandwidth 40 to 1000MHz;Tmb=25℃,VB=24V,ZS=ZL=75Ω)
Egi10003424DH
PART NUMBER
SYSMBOL
PARAMETER
UNIT
MIN.
TYP.
MAX.
CONDITIONS
GP
power gain
dB
31
-
33
f =50MHz
SL
slope cable equivalent
dB
1.0
-
2.5
f =50 to 1000 MHz
FL
flatness of frequency response
dB
-
-
±0.5
f =40 to 1000 MHz
S11
input return loss
dB
-
-
-16
f =40 to 1000 MHz
S22
output return loss
dB
-
-
-16
f =40 to 1000 MHz
CTB
composite triple beat
dB
-
-
-67
110 channel
CSO
composite second order distortion
dB
-
-
-66
VO=48dBmV at 745.25MHz
Xmod
cross modulation
dB
-
-
-61
6dB tilted across the band
Vo
output voltage
dBmV
67
-
-
dim=-60dB
F
noise figure
dB
-
-
8
Itot
total current consumption(DC)
mA
420
-
465
f=860 MHz
VB=+24V
The module normally operates at VB=24V(±0.5).
MODULE DIMENSIONS
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