RF F3928

F3928

SED POWER AMPLIFIER d Ceramic, 2 pi in

Features

Wideband GHz to 3.4GHz

Advanced chnology

Advanced hnology

Optimized

50ohm Op ard Layout for

Integrated terminal i d matching com mpedances

50V Opera erformance o

Pulsed 300W o

Small S B o

Drain E o

-40 o

C to o

C Operatin

Application s

Radar

Air Traffic urveillance

General P and Amplifiers

RF IN

VG

GND

BASE onal Block Diagr ram radar, , Air Traffic Con llance and gene n advanced high power density Ga plifier designed f ed er or proce ss, these high-pe fiers achieve high nd frequency range i in a single packag is a matched Ga N transi stor packaged i in a hermetic, f flanged ceramic package. This es excell bility through the use of advance d heat sink and techn optim ologies. Ease o ized matching n etworks external l to the package power r performance in a single amplifier r e, nd ering Inform ation

I nGaP HBT

Optimum Technology Matching®, Enabli ing Wireless Connectivity TM , PowerStar® TM TOTAL RADIO TM and Ultim registered trademarks are the prope

TM are trademarks of RFMD, LL erty of their respective owners. ©2009

7628 T horndike Road, Gre ensboro, NC 27409 ort, contact RFMD at t (+1) 336-678-5570

Optimized for 2.8-3.5GHz; 50V ng® Applied

GaN HEMT

RF MEMS

LDMOS

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

Absolute Maximum Ratings

Parameter

Drain Source Voltage

Gate Source Voltage

Gate Current (Ig)

Rating Unit

150 V

-5 to +2 V

155 mA

Operational Voltage

Ruggedness (VSWR)

Storage Temperature Range

50

3:1

-55 to +125

V

0

C

Operating Temperature Range (T

L

Operating Junction Temperature (T

J

Human Body Model

MTTF (T

J

< 200

0

C)

Class 1A

3.0E + 06 Hours

Thermal Resistance, Rth (junction to case)

T

C

=85

0

C, DC bias only

T

C

=85

0

C, 100mS pulse, 10% duty cycle

0.89

0.27

0

C/W

* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two.

Bias Conditions should also satisfy the following expression: P

DISS

< (T

J

– T

C

) / R

TH

J-C and T

C

= T

CASE

Parameter

Min.

Specification

Typ. Max.

Unit Condition

Recommended Operating Conditions

Drain Voltage (V dsq

V

Gate Voltage (V gsq

) -5

Drain Bias Current

Frequency of Operation

Capacitance

Crss

2800

440

TBD

3400 mA

MHz pF Vg= -8V, Vd = 0V

Ciss

Coss

DC Functional Test

Ig (off) – Gate Leakage

Id (off) – Drain Leakage

Vgs (th) – Threshold Voltage

Vds (on) – Drain Voltage at high current

RF Functional Test

Small Signal Gain

Power Gain

Input Return Loss

Output Power

Drain Efficiency

9

54

45

TBD

TBD

-4.2

0.13

12

9.9

54.9

53

2

2.5

-5.5 pF pF mA mA

V

V dB dB dB dBm

%

Vg= -8V, Vd = 0V

Vg= -8V, Vd = 0V

Vg = -8V, Vd = 0V

Vg = -8V, Vd = 36V

Vd = 36V, Id = 40mA

Vg = 0V, Id = 1.5A f=2800MHz, Pin = 30dBm [1,2] f=2800MHz, Pin = 45dBm [1,2] f=2800MHz, Pin = 30dBm [1,2] f=2800MHz, Pin = 45dBm [1,2] f=2800MHz, Pin = 45dBm [1,2]

Small Signal Gain

Power Gain

Input Return Loss

Output Power

Drain Efficiency

Small Signal Gain

Power Gain

Input Return Loss

Output Power

Drain Efficiency

RF Typical Performance

9

54

45

9

54

45

12

9.5

54.5

56

10

9.3

54.3

52

-5.5

-5.5 dB dB dB dBm

% dB dB dB dBm

% f=3100MHz, Pin = 30dBm [1,2] f=3100MHz, Pin = 45dBm [1,2] f=3100MHz, Pin = 30dBm [1,2] f=3100MHz, Pin = 45dBm [1,2] f=3100MHz, Pin = 45dBm [1,2] f=3400MHz, Pin = 30dBm [1,2] f=3400MHz, Pin = 45dBm [1,2] f=3400MHz, Pin = 30dBm [1,2] f=3400MHz, Pin = 45dBm [1,2] f=3400MHz, Pin = 45dBm [1,2]

Small Signal Gain

Power Gain

Gain Variation with Temperature

Output Power (Psat)

Drain Efficiency

11

10

54.7

300

48

-0.015 dB dB dB/ 0 C dBm

W

% f=3200MHz, Pin = 30dBm [1,2]

Pout = 54.7dBm [1,2]

At peak output power [1,2]

Peak output power [1,2]

Peak output power [1,2]

At peak output power [1,2]

[1] Test Conditions: Pulsed Operation, PW=100usec, DC=10%, Vds=50V, Idq=440mA, T=25ºC

[2] Performance in a standard tuned test fixture

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

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Support, contact RFMD at (+1) 336-678-5570 or [email protected]

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

Typical Performance in standard fixed tuned test fixture over temperature (pulsed at center band frequency)

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical 3 of 10

Support, contact RFMD at (+1) 336-678-5570 or [email protected]

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

Typical Performance in standard fixed tuned test fixture (T=25°C, unless noted)

Gain/ Efficiency vs. Pout, f = 3200MHz

(Pulsed 10% duty cycle, 100uS, Vd = 50V, Idq = 440mA)

13

12

11

Gain

Drain Eff

10

9

8

40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55

Pout, Output Power (dBm)

10

25

20

15

60

55

50

45

40

35

30

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical 4 of 10

Support, contact RFMD at (+1) 336-678-5570 or [email protected]

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical 5 of 10

Support, contact RFMD at (+1) 336-678-5570 or [email protected]

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

Pin

1

2

3

Function

Gate

Drain

Source

Description

Gate – VG RF Input

Drain – VD RF Output

Source – Ground Base

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

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Support, contact RFMD at (+1) 336-678-5570 or [email protected]

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

Bias Instruction for RF3928 Evaluation Board

ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.

Evaluation board requires additional external fan cooling.

Connect all supplies before powering evaluation board.

1. Connect RF cables at RFIN and RFOUT.

2. Connect ground to the ground supply terminal, and ensure that both the V

G

and V

D

grounds are also connected to this ground terminal.

3. Apply -6V to Vg.

4. Apply 50V to Vd.

5. Increase Vg until drain current reaches 440mA or desired bias point.

6. Turn on the RF input.

IMPORTANT NOTE: Depletion mode device, when biasing the device VG be applied BEFORE V

D

. When removing bias V

D must be removed BEFORE V

G is removed. Failure to follow sequencing will cause the device to fail.

Note: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board.

Vg Vd

RFIN RFOUT

RF3928

2.8 – 3.4GHz

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical 7 of 10

Support, contact RFMD at (+1) 336-678-5570 or [email protected]

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

Evaluation Board Schematic

Component

Evaluation Board Bill of Materials

Value Manufacturer Part Number

C1,C11 22pF

C2, C14 12pF

ATC ATC100A220JT

ATC ATC100A120JT

C5, C16 1000pF Panasonic ECJ-2VB1H102K

C6,C15 10000pF Panasonic ECJ-2VB1H103K

C8,C18 10uF Panasonic ECA-2AM100

C9 0.7pF ATC ATC100A0R7BT

C10 0.2pF ATC ATC100A0R2BT

C17 62pF ATC ATC100B620JT

L20,L21 115 Steward 28F0181-1SR-10

L22,L23 75 ohm, 10A Steward 35F0121-1SR-10

     

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical 8 of 10

Support, contact RFMD at (+1) 336-678-5570 or [email protected]

on Board La

F3928

SED POWER AMPLIFIER

*

Z So urce (

Ω)

4 – j0.5

9 – j13.5

– j16.5

3 – j16.7

Z Load (

Ω)

29.5 – j 8.9

17.0 – j 9.0 width.

Optimum Technology Matching®, Enabli ing Wireless Connectivity TM , PowerStar® TM TOTAL RADIO TM and Ultim registered trademarks are the prope

TM are trademarks of RFMD, LL erty of their respective owners. ©2009

7628 T horndike Road, Gre ensboro, NC 27409 ort, contact RFMD at t (+1) 336-678-5570

Proposed

RF3928

300W GaN WIDE-BAND PULSED POWER AMPLIFIER

REV DESCRIPTION OF CHANGE

2 Updated package photo and part description

3 Added new format graphs, source and load impedances

Updated evaluation board BOM

4 Added max gate current limit

Updated Rth based on RF pulse measurements

Added Output power and drain efficiency graphs detailing the effects of pulse width and duty cycle

Updated source and load impedances

Updated evaluation board BOM

Test limits updated based on completion of validation data

5 Updated Rth for pulse/DC, Max Vd, Min Eff, Min Pout, package picture size (front page)

MODIFIED

By

DATE

MP 3/17/2008

MP 6/7/2010

MP 6/15/2010

MP 8/27/2010

DR 9/28/2010.

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM , PowerStar®, POLARIS TM TOTAL RADIO TM and UltimateBlue TM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.

Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical 10 of 10

Support, contact RFMD at (+1) 336-678-5570 or [email protected]

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