TakeMS | TMS2GB364E081-139CM | Datasheet | takeMS 2GB DDR3 PC-1333

takeMS TMS1GB364D08x-138xx
These memory devices are JEDEC standard unbuffered DIMMs, based on
CMOS DDR3 SDRAM technology using DDR3 SDRAMs in FBGA packages on
a 240-pin glass epoxy substrate. The memory array is designed with Double
Data Rate (DDR3) Synchronous DRAMs for unbuffered applications.
Fly-by command/address/control bus architecture of DDR3 SDRAMs allows
for concurrent operation, thereby providing high, effective bandwidth. This
main benefit of DDR3 is made possible by its 8 bit prefetch buffer.
DDR3 memory ensures a power consumption reduction of 30% compared to
DDR2 modules due to DDR3's 1.5 V supply voltage, also defined as
"Enhanced low power features".
These modules feature Serial Presence Detect (SPD) based on a serial
EEPROM device. DDR3 SPD programming is based on a speed bin. DDR3
latencies are numerically higher because the clock cycles by which they are
measured are shorter. Absolute latency (ns) is generally equal to or faster
than DDR2.
240-pin Unbuffered DDR3 SDRAM
JEDEC standard 1.5V I/O
Fly-by command/address/control bus with on-DIMM termination
On-die I/O calibration engine
On-Die Termination (ODT)
Serial Presence Detect (SPD) with EEPROM
High precision calibration resistors
Impedance controlled 6-layer PCB Technology
JEDEC standard form factor (133.35 mm x 30.0 mm)
READ and WRITE calibration
Improved thermal design
Operating Temperature 0°C ~ 75°C
Technical details
1024 MB longdimm module
128Mx8 IC organisation
x64 module organisation
1333MHz / PC3 8500
single sided / 8 ICs
CAS Latency 8 at max. memclock
For pin configuration please check www.takems.com/support/index.php
If you have any questions regarding our products you can contact us via
email: info@takems.com
Order-No.: TMS1GB364D08x-138xx
Web: www.takems.com
E-Mail: info@takems.com
Tel: +49-7667-9414-0
Fax: +49-7667-9414-444
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