X- Band GaN Based Solid State Power Amplifier

X- Band GaN Based Solid State Power Amplifier
X- Band GaN Based Solid State Power Amplifier
PRODUCT FEATURES
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
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8.8to 9.5 GHz Operating band
1kW Peak Pulsed Power
32 dB Linear Gain (typ)
40V Operation
PRODUCT DESCRIPTION
The Amplifier is designed for X band pulsed power applications with up to a 10% duty cycle. The amplifier uses high
performance Gallium Nitride (GaN) power transistors to achieve high output power combined with high efficiency.
The amplifier provides excellent thermal stability through the use of a high thermal conductivity carrier. The product
is very suited for high power ATC and surveillance radar, general purpose high power output stages and replacing
TWTs
ELECTRICAL SPECIFICATIONS @ 25C, 50  System
Parameter
Symbol
Min
Operating Frequency
8.8
1
Saturated Output Power
850
Small Signal Gain
30
Input Return Loss
S11
Output Return Loss
S22
Power added efficiency
Operating Voltage
Pulse droop
MECHANICAL SPECIFICATIONS
Parameter
Dimensions
Weight
Cooling: External heatsink required
Value
300 x 250 x 60
4000
Typ
1000
32
Max
9.5
1100
34
-9.5
-9.5
30
40
0.6
Units
mm
grams
Notes: 1. Measured under pulse condition of Pulse Width = 10 μsec, Duty Cycle = 10%
Unit
GHz
Watts
dB
dB
dB
%
V
dB
Limits
Max
Max
X- Band GaN Based Solid State Power Amplifier
Figure 1 Saturated Output Power
Figure 2 Small Signal
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