Kingston Technology | KVR1333D3LS4R9S/2G | Datasheet | Kingston Technology ValueRAM KVR1333D3LS4R9S/2G memory module

Memory Module Specifications
2GB 1Rx4 256M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
This document describes ValueRAM's 256M x 72-bit (2GB)
9 cycles
DDR3-1333 CL9 SDRAM (Synchronous DRAM), low voltage,
Row Cycle Time (tRCmin)
49.5ns (min.)
registered w/parity, 1Rx4 ECC memory module, based on
Refresh to Active/Refresh
Command Time (tRFCmin)
110ns (min.)
eighteen 256M x 4-bit DDR3-1333 FBGA components. The SPD
is programmed to JEDEC standard latency DDR3-1333 timing
Row Active Time (tRASmin)
36ns (min.)
of 9-9-9. This 240-pin DIMM uses gold contact fingers. The
Power (Operating)
(1.35V) = TBD*
electrical and mechanical specifications are as follows:
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
On-DIMM thermal sensor (Grade B)
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
(1.50V) = TBD*
UL Rating
94 V - 0
Operating Temperature
0o C to 85o C
Storage Temperature
-55o C to +100o C
*Power will vary depending on the SDRAM and
Register/PLL used.
Continued >>
Document No. VALUERAM0962-001.A00
Page 1
(units = millimeters)
Document No. VALUERAM0962-001.A00
Page 2
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