Ultra high stability temperature compensated crystal oscillator

Ultra high stability temperature compensated crystal oscillator
Ultra high stability temperature compensated crystal oscillator
Product name : TG5032CFN / TG5032SFN
Features









Ultra high stability (<100ppb)
Low phase noise
Frequency range : 10 MHz to 40 MHz
Output : CMOS, Clipped sine wave
Supply voltage : 2.375 to 3.63 V
External dimensions : 5.0 × 3.2 × 1.45 mm
Small size package (4pads)
Pb free.
Complies with EU RoHS directive.
TG5032CFN (CMOS output)
TG5032SFN (Clipped sine wave output)
Description
Applications




Small Cells
Stratum3
Femtocell
Network system etc..
This product is ultra high stability temperature
compensated crystal oscillator of CMOS and Clipped
sine wave outputs using fundamental oscillation of
Crystal unit. This has realized a low phase noise in
frequency 10 to 40 MHz, and it is suitable for the
reference clock include Small Cells.
This allows the product to be compliant with various
standards including GR-1244-CORE Stratum3,
G8262 ECC-1&ECC-2.
►Explanation of the mark that are using it for the documents
►Pb free.
►Complies with EU RoHS directive.
*About the products without the Pb-free mark.
Contains Pb in products exempted by EU RoHS directive.
(Contains Pb in sealing glass, high melting temperature type solder or other.)
►Designed for automotive applications such as Car Multimedia, Body Electronics, Remote Keyless Entry etc.
►Designed for automotive applications related to driving safety (Engine Control Unit, Air Bag, ESC etc ).
[Notice]
This material is subject to change without notice.
Any part of this material may not be reproduced or duplicated in any form or any means without the written permission of Seiko Epson.
The information about applied data, circuitry, software, usage, etc. written in this material is intended for reference only. Seiko Epson does not
assume any liability for the occurrence of customer damage or infringing on any patent or copyright of a third party. This material does not
authorize the licensing for any patent or intellectual copyrights.
When exporting the products or technology described in this material, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
You are requested not to use the products (and any technical information furnished, if any) for the development and/or manufacture of
weapon of mass destruction or for other military purposes. You are also requested that you would not make the products available to any
third party who may use the products for such prohibited purposes.
These products are intended for general use in electronic equipment. When using them in specific applications that require extremely high
reliability, such as the applications stated below, you must obtain permission from Seiko Epson in advance.
/ Space equipment (artificial satellites, rockets, etc.) / Transportation vehicles and related (automobiles, aircraft, trains,
vessels, etc.) / Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work
equipment and security equipment / traffic control equipment / and others requiring equivalent reliability.
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Document No.: TG5032xFN_AE_Ver. 1.00
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1. Electrical characteristics
1) Absolute maximum ratings
Parameter
Supply voltage
Storage temperature
Frequency control voltage
Symbol
V CC -GND
T_stg
V C -GND
Unit
V
°C
V
Min.
-0.5
-40
-0.5
Typ.
-
Max
+4.0
+90
V CC +0.5
Notes
Unit
Min.
2.375
2.375
2.7
2.85
3.135
0.0
Typ.
2.5
2.85
3.0
3.3
-
Max
3.63
2.625
3.0
3.15
3.465
0.0
-40
+25
+85
Standard
N.C.
1.5
1.65
15
10
10
2.5
2.65
16.5
11
11
V C Terminal / TCXO
-
-
Store as bare product after packing
V C Terminal
2) Operating conditions
Parameter
Supply voltage
Symbol
V CC
V
GND
Operating temperature range
Frequency control voltage
Output load condition
T_ use
°C
VC
V
Load_C
Load_C
Load_R
pF
pF
kΩ
GND
0.5
0.65
13.5
9
9
Cc
μF
0.01
Notes
Supply voltage range
V CC =2.5 V Type
V CC =2.85 V Type
V CC =3.0 V Type
V CC =3.3 V Type
V C Terminal / VC-TCXO
CMOS output
Clipped sine wave
DC-cut capacitor *1
Clipped sine wave
*1 DC-cut capacitor is not included in this TCXO. Please attach an external DC-cut capacitor (0.01 μF Min.) to the out pin.
3-1) Frequency characteristics
Parameter
Output frequency
Frequency tolerance *2
(T_use=+25°C +/-2°C)
(Reflow cycles : 2 times)
Unit
MHz
Min.
10
f_tol
× 10-6
-1.0
-
+1.0
-0.10
-0.14
-0.25
-0.28
-0.10
-0.05
-0.10
-0.05
-
+0.10
+0.14
+0.25
+0.28
+0.10
+0.05
+0.10
+0.05
T_use=-40°C to +85°C (Standard)
T_use=-40°C to +85°C
T_use=-40°C to +85°C
T_use=-40°C to +85°C
Load +/-10%
Load +/-2%
V CC +/-5%
V CC +/-2%
-0.10
-
+0.10
Minimum of 1 frequency reading every
2°C, over the operating temperature
range (1°C/minute max.)
-0.20
-
+0.20
-0.5
-3.0
-0.01
-0.04
-
+0.5
+3.0
+0.01
+0.04
-4.6
-
+4.6
Frequency / temperature
characteristics
(Reference to (fmax+fmin)/2.)
fo-Tc
× 10
Frequency / load coefficient
fo-Load
× 10-6
Frequency / voltage
coefficient
fo- V CC
× 10-6
-6
× 10-6
Frequency slope
-
Hysteresis
-
× 10-6
f_age
× 10-6
-
× 10-6
-
× 10-6
Frequency aging
Holdover stability
(Constant temperature)
Holdover stability
(Free‐run accuracy)
(Vcc=Typ., GND=0.0 V, Vc=Typ. V, Load=Typ., T_use=+25°C)
Typ.
Max
Notes
40
Symbol
fo
/°C
Frequency measured before and
after at +25°C.
T_use=+25°C, First year
T_use=+25°C, 20 years
T_use=+25°C, 1 day
*3
T_use=+25°C, 1 day
*4
*5
-9
Acceleration sensitivity
-
× 10
2.0
3 axes, 30-1500 Hz
/G
*2 Measured in the elapse of 24 hours after reflow soldering.
*3 After 10 days of continuous operation.
*4 After 48 hours of continuous operation.
*5 This includes initial frequency tolerance, frequency / temperature characteristics, frequency / load coefficient,
frequency/voltage coefficient and frequency aging (+25°C , 20 years)
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Document No.: TG5032xFN_AE_Ver. 1.00
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3-2) Frequency control characteristics
Parameter
Frequency control range
Linearity
Input impedance
Frequency change polarity
Symbol
Unit
f_cont
× 10-6
Z IN
-
kΩ
-
%
Min.
-10.0
+5.0
-10
100
4) Electrical Characteristics
Parameter
Symbol
Unit
I CC
mA
t_str
ms
Min.
-
Rise time
tr
ns
-
Fall time
tf
ns
-
SYM
%
Current consumption
Start up time
45
Symmetry
40
High output voltage
Low output voltage
Output level
V OH
V OL
Vp-p
V
V
Vp-p
Phase noise
(19.2MHz)
L(f)
dBc/
Hz
Phase noise
(30.72MHz)
L(f)
dBc/
Hz
Phase noise
(40MHz)
L(f)
dBc/
Hz
90% V CC
0.8
-
(Vcc=Typ., GND=0.0 V, Vc=Typ. V, Load=Typ., T_use=+25°C)
Typ.
Max
Notes
-5.0
Vc=1.5V+/-1.0V, Vc=1.65V+/-1.0V
+10.0
+10
V C -GND(DC), V C =Typ.
Positive polarity
(Vcc=Typ., GND=0.0 V, Vc=Typ. V, Load=Typ., T_use=+25°C)
Typ.
Max
Notes
5.0
Clipped sine wave (Standard)
3.0
Clipped sine wave (Option)
5.0
CMOS (~26MHz)
6.0
CMOS (~40MHz)
1.0
5.0
t=0 at 90%Vcc
10%Vcc to 90%Vcc level
8.0
CMOS output
90%Vcc to 10%Vcc level
8.0
CMOS output
50% Vcc level
50
55
CMOS output
GND level(DC-cut)
50
60
Clipped sine wave (Option)
CMOS output
10% Vcc CMOS output
Clipped sine wave
-60
-46
1 Hz offset
-90
-78
10 Hz offset
-116
-106
100 Hz offset
-139
-131
1 kHz offset
-153
-147
10 kHz offset
-154
-148
100 kHz offset
-155
-149
1 MHz offset
-59
-44
1 Hz offset
-89
-77
10 Hz offset
-116
-106
100 Hz offset
-137
-129
1 kHz offset
-152
-146
10 kHz offset
-154
-148
100 kHz offset
-156
-150
1 MHz offset
-57
-43
1 Hz offset
-87
-75
10 Hz offset
-113
-103
100 Hz offset
-135
-127
1 kHz offset
-151
-145
10 kHz offset
-153
-147
100 kHz offset
-155
-149
1 MHz offset
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Seiko Epson Corporation
Document No.: TG5032xFN_AE_Ver. 1.00
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2. Characteristics
2-1) “Frequency / temperature characteristics”
2-1-1) Standard spec : +/-0.1 × 10-6 Max. (T_use=-40°C to +85°C)
19.2MHz [N=40pcs]
30.72MHz [N=40pcs]
40MHz [N=40pcs]
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Seiko Epson Corporation
Document No.: TG5032xFN_AE_Ver. 1.00
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2-2) Frequency aging (40MHz) [N=5pcs]
2-3) Holdover stability (19.2MHz) [N=40pcs]
2-4) Frequency control characteristics [N=40pcs]
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Document No.: TG5032xFN_AE_Ver. 1.00
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2-5) current consumption
2-6) Rise time / Fall time (at CMOS output)
2-7) Output voltage [VOH, VOL] (at CMOS output)
2-8) Symmetry (at CMOS output)
2-9) Output level [VP-P] (at Clipped sine wave)
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2-10) start up time(19.2MHz, 40MHz)
19.2MHz
40MHz
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Document No.: TG5032xFN_AE_Ver. 1.00
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2-11) Phase noise (19.2MHz, 30.72MHz, 40MHz, refer to data of Page3.)
2-12) Short term stability [ADEV] (19.2MHz)
2-13) TDEV (19.2MHz, Loop BW=0.1Hz)
Constant temperature : +25 deg.C
Constant temperature : +70 deg.C
2-14) MTIE (19.2MHz, Loop BW=0.1Hz)
Constant temperature : +25 deg.C
Constant temperature : +70 deg.C
Compliant with G.813 option1 and 2
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Seiko Epson Corporation
Document No.: TG5032xFN_AE_Ver. 1.00
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3. Outline
3-1) Outline dimensions and Pin information
TG5032CFN/SFN
3.20±0.2
#3
#4
Marking
#1
5.00±0.2
#2
0.30
0.75
#2
#1
Pin
Connections
VC-TCXO
TCXO
VC
N.C.
1
0.95
0.30
1.45±0.2
Unit: mm
2
GND
3
OUT
4
V CC
Do not connect “N.C.” pin with any other pins (also mutually)
#3
#4
3-2) Soldering pattern
Example of patterning design indicated as follows. In an actual design, please consider mounting density, the reliability of
soldering, etc. and check whether performance is optimal.
Soldering pattern of TG5032CFN/SFN
unit : mm
Please set By-pass capacitor
(0.1μF) near the Vcc pad
To GND
1.10
#3
1.10 1.30
#4
#1
#2
4.40
To maintain stable operation, provide a 0.1uF by-pass capacitor at a location as near as
possible to the power source terminal of the crystal product (between Vcc - GND).
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Document No.: TG5032xFN_AE_Ver. 1.00
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4. Timing chart
4-1) Output waveform (CMOS output)
tf
tr
VCC
90 % VCC
50 % VCC
10 % VCC
GND
tW
SYM=tw/t×100 %
VOH
t
VOL
4-2) Output waveform (Clipped sine wave output)
Vp-p
GND
tW
t
SYM=tw/t×100 %
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5. Test circuit
5-1) CMOS output for TCXO
1) Output Load : 15 pF
Test Point
Supply
Voltage
Vcc
OUT
N.C.
GND
A
Vcc
OUT
By-pass
Capacitor
N.C.
GND
By-pass
Capacitor
Load_C
15 pF
0.1 µF
2) Current consumption
Supply
Voltage
Load_C
15 pF
0.1 µF
3) Conditions
1. Oscilloscope: Impedance
Min. 1 MΩ
Input capacitance
Max. 10 pF
Band width
Min. 300 MHz
Impossible to measure both frequency and wave form at the same time.(In case of using
oscilloscope's amplifier output, possible to measure both at the same time.)
2. Load_C includes probe capacitance.
3. A capacitor (By-pass: 0.1 µF) is placed between V CC and GND, and closely to TCXO.
4. Use the current meter whose internal impedance value is small.
5. Power Supply
Impedance of power supply should be as low as possible.
6. GND pin should be connected to low impedance GND.
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Document No.: TG5032xFN_AE_Ver. 1.00
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5-2) CMOS output for VC-TCXO
1) Output Load : 15 pF
Test Point
Supply
Voltage
By-pass
Capacitor
Vcc
OUT
Vc
GND
Load_C
15 pF
Control
Voltage
0.1 µF
2) Current consumption
Supply
Voltage
A
Vcc
OUT
By-pass
Capacitor
Vc
GND
0.1 µF
Load_C
15 pF
Control
Voltage
3) Conditions
1. Oscilloscope: Impedance
Min. 1 MΩ
Input capacitance
Max. 10 pF
Band width
Min. 300 MHz
Impossible to measure both frequency and wave form at the same time.(In case of using
oscilloscope's amplifier output, possible to measure both at the same time.)
2. Load_C includes probe capacitance.
3. A capacitor (By-pass: 0.1 µF) is placed between V CC and GND, and closely to TCXO.
4. Use the current meter whose internal impedance value is small.
5. Power Supply
Impedance of power supply should be as low as possible.
6. GND pin should be connected to low impedance GND.
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Document No.: TG5032xFN_AE_Ver. 1.00
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5-3) Clipped sine wave output for TCXO
1) Output Load : 10 kΩ // 10 pF
DC-cut
Capacitor
0.01 µF
Vcc
OUT
N.C.
GND
By-pass
Capacitor
Supply
Voltage
Test Point
Load_R
10 kΩ
Load_C
10 pF
0.1 µF
2) Current consumption
DC-cut
Capacitor
0.01 µF
A
Vcc
OUT
N.C.
GND
By-pass
Capacitor
Supply
Voltage
Load_C
10 pF
Load_R
10 kΩ
0.1 µF
3) Conditions
1. Oscilloscope: Impedance
Min. 1 MΩ
Input capacitance
Max. 10 pF
Band width
Min. 300 MHz
Impossible to measure both frequency and wave form at the same time.(In case of using
oscilloscope's amplifier output, possible to measure both at the same time.)
2. Load_C includes probe capacitance.
3. A capacitor (By-pass: 0.1 µF) is placed between V CC and GND, and closely to TCXO.
4. Use the current meter whose internal impedance value is small.
5. Power Supply
Impedance of power supply should be as low as possible.
6. GND pin should be connected to low impedance GND.
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Document No.: TG5032xFN_AE_Ver. 1.00
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5-4) Clipped sine wave output for VC-TCXO
1) Output Load : 10 kΩ // 10 pF
DC-cut
Capacitor
0.01 µF
Supply
Voltage
By-pass
Capacitor
Vcc
OUT
Vc
GND
0.1 µF
Load_R
10 kΩ
Load_C
10 pF
Control
Voltage
Test Point
2) Current consumption
DC-cut
Capacitor
0.01 µF
Supply
Voltage
A
Vcc
OUT
By-pass
Capacitor
Vc.
GND
0.1 µF
Control
Voltage
Load_R
10 kΩ
Load_C
10 pF
3) Conditions
1. Oscilloscope: Impedance
Min. 1 MΩ
Input capacitance
Max. 10 pF
Band width
Min. 300 MHz
Impossible to measure both frequency and wave form at the same time.(In case of using
oscilloscope's amplifier output, possible to measure both at the same time.)
2. Load_C includes probe capacitance.
3. A capacitor (By-pass: 0.1 µF) is placed between V CC and GND, and closely to TCXO.
4. Use the current meter whose internal impedance value is small.
5. Power Supply
Impedance of power supply should be as low as possible.
6. GND pin should be connected to low impedance GND.
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Seiko Epson Corporation
Document No.: TG5032xFN_AE_Ver. 1.00
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Date: Mar. 1 2017
6. Handling precautions
Prior to using this product, please carefully read the section entitled “Precautions” on our Web site
( http://www5.epsondevice.com/en/quartz/tech/precaution/ ) for instructions on how to handle and use the product
properly to ensure optimal performance of the product in your equipment. Before using the product under any
conditions other than those specified therein, please consult with us to verify and confirm that the performance of the
product will not be negatively affected by use under such conditions.
In addition to the foregoing precautions, in order to avoid the deteriorating performance of the product, we strongly
recommend that you DO NOT use the product under ANY of the following conditions:
(1)
Mounting the product on a board using water-soluble solder flux and using the product without removing
the residue of the flux completely from the board. The residue of such flux that is soluble in water or
water-soluble cleaning agent, especially the residues which contains active halogens, will negatively
affect the performance and reliability of the product.
(2)
Using the product in any manner that will result in any shock or impact to the product.
(3)
Using the product in places where the product is exposed to water, chemicals, organic solvent, sunlight,
dust, corrosive gasses, or other materials.
(4)
Using the product in places where the product is exposed to static electricity or electromagnetic waves.
(5)
Applying ultrasonic cleaning without advance verification and confirmation that the product will not be
affected by such a cleaning process, because it may damage the crystal, IC and/or metal line of the
product.
(6)
Touching the IC surface with tweezers or other hard materials directly.
(7)
Using the product under any other conditions that may negatively affect the performance and/or
reliability of the product.
(8)
Power supply with ripple may cause of incorrect operation or degradation of phase noise characteristics,
so please evaluate before use.
(9)
Frequency aging is from environmental tests results to the expectation of the amount of the frequency variation.
This doesn't guarantee the product-life cycle.
Should any customer use the product in any manner contrary to the precautions and/or advice herein, such use
shall be done at the customer’s own risk.
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Seiko Epson Corporation
Document No.: TG5032xFN_AE_Ver. 1.00
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Date: Mar. 1 2017
7. Contact
America
Epson Electronics America, Inc.
214 Devcon Drive, San Jose, CA 95112, U.S.A.
Phone: +1-800-228-3964
FAX: +1-408-922-0238
Europe
Epson Europe Electronics GmbH
Riesstrasse 15, 80992 Munich, Germany
Phone: +49-89-14005-0
FAX: +49-89-14005-110
Asia
Epson (China) Co., Ltd.
7F, Jinbao Bldg., No.89 Jinbao Street Dongcheng District, Beijing, China, 100005
Phone: +86-10-8522-1199
FAX: +86-10-8522-1120
Shanghai Branch
High-Tech Building, 900 Yishan Road, Shanghai 200233, China
Phone: +86-21-5423-5577
FAX: +86-21-5423-4677
Shenzhen Branch
12/F, Dawning Mansion, #12 Keji South Road, Hi-Tech Park, Shenzhen, China
Phone: +86-755-2699-3828
FAX: +86-755-2699-3838
Epson Hong Kong Ltd.
Unit 715-723 7/F, Trade Square, 681 Cheung Sha Wan Road, Kowloon, Hong Kong
Phone: (86) 755-26993828 (Shenzhen Branch)
FAX: (86) 755-26993838 (Shenzhen Branch)
Epson Taiwan Technology & Trading Ltd.
14F, No. 7, Song Ren Road, Taipei 110, Taiwan
Phone: +886-2-8786-6688
FAX: +886-2-8786-6660
Epson Singapore Pte., Ltd.
No 1 HarbourFront Place, #03-02 HarbourFront Tower One, Singapore 098633
Phone: +65-6586-5500
FAX: +65-6271-3182
Seiko Epson Corp. Korea Office
19F, (63 Bldg., Yoido-dong) 50, 63-ro, Yeongdeungpo-gu, Seoul 150-763, Korea
Phone: +82-2-784-6027
FAX: +82-2-767-3677
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Document No.: TG5032xFN_AE_Ver. 1.00
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Date: Mar. 1 2017
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