TGA4909 Datasheet
TGA2590
6-12 GHz 30W GaN Power Amplifier
Applications
 Electronic Warfare
 Commercial and Military Radar
Product Features






Functional Block Diagram
Frequency Range: 6 - 12 GHz
Output Power: > 45 dBm (PIN = 23 dBm)
PAE: > 25 % (PIN = 23 dBm)
Large Signal Gain: > 22.0 dB
VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.
Chip Dimensions: 5.4 mm x 7.0 mm x 0.10 mm
General Description
TriQuint’s TGA2590 is a wideband power amplifier
fabricated on TriQuint’s production 0.25um GaN on
SiC process. The TGA2590 operates from 6 - 12GHz
and provides greater than 30W of saturated output
power with greater than 22 dB of large signal gain and
greater than 25% power-added efficiency.
The TGA2590 is fully matched to 50Ω with DC blocking
caps at both RF ports allowing for simple system
integration. The broadband performance supports
electronic warfare and radar across defense and
commercial markets.
Pad Configuration
Pad No.
Symbol
1
2, 14
3, 13
4, 12
5, 11
6, 10
7, 9
8
RF In
VG1
VG2
VD1
VD2
VG3
VD3
RF Out
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Ordering Information
The information contained on this data sheet is
technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or
transfer contrary to US law is prohibited.
Part
ECCN
Description
TGA2590
3A001.b.2.b
6-12 GHz 30W PA
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Value
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current w/ RF Drive (ID_DRIVE)
Gate Current (IG)
Power Dissipation (PDISS)
Input Power, CW, 50 Ω, 85 °C (PIN)
40 V
-8 to 0 V
8.0
-20 to 60 mA
115 W
30 dBm
Input Power, CW, 6:1 VSWR, 85 °C
(PIN)
27 dBm
Channel temperature (TCH)
275 °C
Mounting Temperature
(30 Seconds maximum)
320 °C
Storage Temperature
Value
Drain Voltage (VD)
Drain Current (IDQ)
Drain Current w/ RF Drive (ID_DRIVE)
Gate Voltage (VG), typ.
Input Power (PIN)
Load VSWR
20 V
2.0 A
< 7.0 A
- 2.4 V
+17 to +25 dBm
< 2.0:1
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.
Parameter
Operational Frequency Range
Output Power (PIN = 23 dBm)
Power Added Efficiency (PIN = 23 dBm)
Input Return Loss
Output Return Loss
Output Power Temperature Coefficient
Input Power
Load VSWR
Min
Typical
6.0
Max
Units
12.0
GHz
dBm
%
46.0
32.5
13.0
11.0
-0.02
17.0
25.0
2.0:1
dB
dB
dBm/ °C
dBm
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 2 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
Median Lifetime (TM)
Test Conditions
Value
Units
TBASE = 85°C, VD = 20V, ID_Drive = 5.5 A,
PIN = 23 dBm, POUT = 44 dBm, PDISS =
85 W
1.3
201
1.16E7
1.4
237
6.15E5
ºC/W
°C
Hrs
ºC/W
°C
Hrs
TBASE = 85°C, VD = 25V, ID_Drive = 5.8 A,
PIN = 23 dBm, POUT = 45.6 dBm, PDISS =
109 W
Notes:
1. MMIC soldered to 20 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temp.).
Median Lifetime
Median Lifetime, TM (Hours)
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
Median Lifetime vs. Channel Temperature
FET13
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (C)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 3 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Typical Performance
Output Power vs. Frequency vs. Pin
50
VD = 20 V, IDQ = 2.0 A, Temp. = 25 °C
48
VD = 25 V, IDQ = 2.0 A, Temp. = 25 °C
48
Output Power (dBm)
Output Power (dBm)
Output Power vs. Frequency vs. Pin
50
46
44
42
17 dBm
19 dBm
21 dBm
23 dBm
25 dBm
40
38
46
44
42
17 dBm
19 dBm
21 dBm
23 dBm
25 dBm
40
38
36
36
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
50
10
11
12
13
14
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
48
48
Output Power (dBm)
Output Power (dBm)
9
Output Power vs. Frequency vs. Temp.
50
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
46
44
42
- 40 °C
40
+25 °C
+85 °C
38
46
44
42
- 40 °C
+25 °C
40
+85 °C
38
36
36
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
Frequency (GHz)
8
9
10
11
12
13
14
Frequency (GHz)
Power Added Eff. vs. Frequency vs. Pin
45
Power Added Eff. vs. Frequency vs. Pin
45
VD = 25 V, IDQ = 2.0 A, Temp. = 25 °C
VD = 20 V, IDQ = 2.0 A, Temp. = 25 °C
40
Power Added Eff. (%)
40
Power Added Eff. (%)
8
Frequency (GHz)
35
30
25
17 dBm
19 dBm
21 dBm
23 dBm
25 dBm
20
15
35
30
25
17 dBm
19 dBm
21 dBm
23 dBm
25 dBm
20
15
10
10
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 4 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Typical Performance
Power Added Eff. vs. Frequency vs. Temp.
45
Power Added Eff. vs. Frequency vs. Temp.
45
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
40
Power Added Eff. (%)
Power Added Eff. (%)
40
35
30
25
20
- 40 °C
+25 °C
15
35
30
25
20
- 40 °C
+25 °C
15
+85 °C
10
+85 °C
10
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
Frequency (GHz)
Power Gain vs. Frequency vs. Temp.
28
Power Gain (dB)
Power Gain (dB)
22
20
18
- 40 °C
+25 °C
14
11
12
13
14
24
22
20
18
- 40 °C
16
+25 °C
14
+85 °C
12
+85 °C
12
10
10
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
Frequency (GHz)
10
11
12
13
14
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
7
Drain Current (A)
7
6
5
4
- 40 °C
+25 °C
+85 °C
2
9
Drain Current vs. Frequency vs. Temp.
8
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
3
8
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
8
Drain Current (A)
10
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
26
24
16
9
Power Gain vs. Frequency vs. Temp.
28
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
26
8
Frequency (GHz)
6
5
4
3
- 40 °C
2
+25 °C
1
1
0
+85 °C
0
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
2nd Harmonic vs. Fund. Freq. vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
Power Ratio to Fundamental (dBc)
Power Ratio to Fundamental (dBc)
Typical Performance
VD = 25 V, IDQ = 2.0A, Pin = 17 dBm
- 40 °C
+25 °C
+85 °C
6
7
8
9
10
11
2nd Harmonic vs. Fund. Freq. vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
12
VD = 25 V, IDQ = 2.0A, Pin = 20 dBm
- 40 °C
+25 °C
+85 °C
6
7
8
2nd Harmonic vs. Fund. Freq. vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
VD = 25 V, IDQ = 2.0A, Pin = 23 dBm
- 40 °C
+25 °C
+85 °C
6
7
8
9
10
9
10
11
12
Fund. Freq. (GHz)
Power Ratio to Fundamental (dBc)
Power Ratio to Fundamental (dBc)
Frequency (GHz)
11
12
Frequency (GHz)
2nd Harmonic vs. Fund. Freq. vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
VD = 25 V, IDQ = 2.0A, Pin = 25 dBm
- 40 °C
+25 °C
+85 °C
6
7
8
9
10
11
12
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 6 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Typical Performance
Gain vs. Freq. vs. Temp.
50
VD = 20 V, IDQ = 2.0A
VD = 25 V, IDQ = 2.0A
45
40
40
35
35
S21 (dB)
S21 (dB)
45
Gain vs. Freq. vs. Temp.
50
30
25
30
25
20
- 40 °C
20
- 40 °C
15
+25 °C
15
+25 °C
10
+85 °C
10
+85 °C
5
5
0
0
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
0
9
11
12
13
14
VD = 25 V, IDQ = 2.0A
-5
-10
-10
S11 (dB)
-5
-15
-20
-15
-20
- 40 °C
- 40 °C
+25 °C
-25
+25 °C
-25
+85 °C
+85 °C
-30
-30
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
Frequency (GHz)
10
11
12
13
14
VD = 25 V, IDQ = 2.0A
-5
-10
-10
S22 (dB)
-5
-15
- 40 °C
-15
-20
+25 °C
- 40 °C
+85 °C
-25
9
Output Return Loss vs. Freq. vs. Temp.
0
VD = 20 V, IDQ = 2.0A
-20
8
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
0
S22 (dB)
10
Input Return Loss vs. Freq. vs. Temp.
0
VD = 20 V, IDQ = 2.0A
S11 (dB)
8
Frequency (GHz)
-25
+25 °C
+85 °C
-30
-30
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 7 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Application Circuit
Bias-up Procedure
Bias-down Procedure
1. Set ID limit to 8.0, IG limit to 150mA
2. Set VG to -5.0V
3. Set VD +20V
4. Adjust VG more positive until IDQ = 2.0 A
5. Apply RF signal
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 8 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Evaluation Board
Bill of Materials
Ref. Designation
Value
C1 – C8
C9, C11, C13, C14
C10, C12
R1, R2, R5, R6
R3 – R4
1000 pF
0.1 uF
10 uF
0Ω
5.1 Ω
Description
Manufacturer
SLC, 50V
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Res, 0402
Res, 0402
Part Number
Various
Various
Various
Various
Various
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 9 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Mechanical Drawing & Bond Pad Description
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad Symbol Description
1
RF In
Input; matched to 50 ohms; AC coupled.
2, 14
VG1
3, 13
VG2
4, 12
VD1
Drain voltage, VD1 top and bottom. Bias network required; must be biased from both sides.
5, 11
VD2
Drain voltage, VD2 top and bottom. Bias network required; must be biased from both sides.
6, 10
VG3
Gate voltage, VG3 top and bottom. Bias network required; must be biased from both sides.
7, 9
VD3
Drain voltage, VD3 top and bottom. Bias network required; must be biased from both sides.
8
RF Out
Output; matched to 50 ohms; AC coupled.
Gate voltage, VG1 top and bottom. VG1 top (pad 2) internally connected to VG2 top (pad 3);
VG1 bottom (pad 14) internally connected to VG2 bottom (pad 13).
Gate voltage, VG2 top and bottom. Bias network required; must be biased from both sides.
VG1 top (pad 2) internally connected to VG2 top (pad 3); VG1 bottom (pad 14) internally
connected to VG2 bottom (pad 13).
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 10 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2590
6-12 GHz 30W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Caution! ESD-Sensitive Device
Use only AuSn (80/20) solder and limit exposure to
temperatures above 300 °C to 3-4 minutes, maximum.
RoHS-Compliance
ESD Rating:
Value:
Test:
Standard:
TBD
TBD
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
ECCN
US Department of State:
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
3A001.b.2.b
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 12 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
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