RF3223 - Qorvo
RF3223
RF3223Low
Noise, Linear
Amplifier High
Linearity/Driver
Amplifier
LOW NOISE, LINEAR AMPLIFIER
HIGH LINEARITY/DRIVER AMPLIFIER
Package Style: QFN, 12-Pin, 3 x 3
Features
„
500 MHz to 2000 MHz
„
+44.0 dBm Output IP3
„
+14.0 dB Gain at 850 MHz
„
+11.4 dBm Input P1dB at
850 MHz
„
3.4 dB Noise Figure at 850 MHz
„
Single 5 V Power Supply
Applications
„
Basestation Applications
„
Cellular and PCS Systems
„
CDMA, W-CDMA Systems
„
GSM/EDGE Systems
„
Final PA for Low-Power Applications
Functional Block Diagram
Product Description
The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for
use in applications requiring high-linearity and low noise figure over the 500 MHz to
3 GHz frequency range. The RF3223 operates from a single 5 V power supply, and is
assembled in an economical 3 mm x 3 mm QFN package.
Ordering Information
RF3223
RF3223SR
RF3223TR7
RF3223PCBA-410
9GaAs HBT
GaAs MESFET
InGaP HBT
Low Noise, Linear Amplifier High Linearity/Driver Amplifier
7” Reel with 100 pieces
7” Reel with 2500 pieces
500MHz to 2000MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
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support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RF3223
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Device Voltage
-0.5 to +6.0
V
Device Current
200
mA
Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Note 1: Max operating voltage is 5 V.
Note 2: Max operating current is 160 mA for backed-off applications. Higher
current compressed applications require dissipated power <0.9 W.
Parameter
Min.
Specification
Typ.
Max.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Unit
Condition
VCC = 5 V, RFIN = -10 dBm, Freq = 850 MHz, with
Temp = 25°C unless otherwise noted.
Overall
AC Specifications
Frequency
MHz
Gain (Small Signal)
12
Reverse Isolation
14.0
15.0
dB
21
F1 = 850 MHz, F2 = 851 MHz
Output IP3
41
45
dBm
Output P1dB
23
+24.5
dBm
3.4
dB
ThetaJC
75
°C/W
Maximum Measured Junction
Temperature at DC Bias Conditions
145
°C
TCASE = +85°C.
ICC = 160 mA
VCC = 5 .0V
Mean Time To Failures
>100
years
TCASE = +85 °C
Noise Figure
Thermal
DC Specifications
Device Voltage
Operating Current Range
5.0
110
150
V
160
mA
VCC = 5 V
Note: The RF3223 must be operated at or below 160 mA in order to achieve the thermal performance listed above.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RF3223
Pin
1
2
Function
GND
RF IN
3
4
5
6
7
8
GND
GND
GND
GND
GND
RF OUT
9
10
11
GND
GND
BIAS
12
Pkg
Base
GND
GND
Description
Interface Schematic
Ground connection.
RF input pin. This pin is not internally DC-blocked. A DC blocking capacitor
suitable for the frequency of operation should be used.
Ground connection.
Ground connection.
Ground connection.
Ground connection.
Ground connection.
Amplifier output pin. This pin is an open-collector output. It must be biased
to VCC through a choke or matching inductor. This pin is typically matched
to 50 : with a shunt bias/matching inductor and series blocking/matching
capacitor. Refer to application schematics.
Ground connection.
See pin 2.
Ground connection.
This pin is used to control the bias current. An external resistor may be
used to set the bias current for any VPD voltage. Allows for trade-offs
between IP3 versus noise figure and TMAX.
Ground connection.
Ground connection. Vias to ground required under the package base.
Package Drawing
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RF3223
Application Schematic - 850 MHz
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RF3223
Evaluation Board Schematic
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RF3223
Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.032”, Board Material FR-4
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
061213
RF3223
061213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 8
RF3223
8 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
061213
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