Samsung M378B5673GB0-CH9 Datasheet

Samsung M378B5673GB0-CH9 Datasheet
SERIAL PRESENCE DETECT
M378B5673GB0-CF8/CH9/CK0/CMA
Organization : 256M x 64
Composition : 128M x 8 * 16ea
Used component part # : K4B1G0846G-BCF8/BCH9/BCK0/BCMA
# of rows in module : 2 Row
# of banks in component : 8 Banks
Feature : 30mm height & double sided component
Refresh : 8K/64ms
Bin Sort : F8(DDR3 [email protected]=7), H9(DDR3 [email protected]=9), K0(DDR3 [email protected]=11), MA(DDR3 [email protected]=13)
Function Supported
Byte
#
Hex Value
Function Described
Note
CF8
Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
0
1
SPD Revision
2
Key Byte / DRAM Device Type
3
Key Byte / Module Type
4
SDRAM Density and Banks
5
SDRAM Addressing
6
Module Nominal Voltage, VDD
7
Module Organization
8
Module Memory Bus Width
9
Fine Timebase Dividend and Divisor
10
Medium Timebase Dividend
11
Medium Timebase Divisor
12
SDRAM Minimum Cycle Time (tCKmin)
13
Reserved
CH9
CK0
CMA
CF8
CH9
CRC coverage 0~116Byte, SPD Byte
Total :256Byte, SPD Byte Use :
176Byte
92h
Version 1.1
11h
DDR3 SDRAM
0Bh
Unbuffered DIMM
02h
1Gb 8banks
02h
Row : 14, Column : 10
11h
1.5V only
00h
2Rank / x8
09h
Non ECC, 64bit
03h
1ps
11h
1/8 (0.125ns)
01h
1/8 (0.125ns)
1.875ns
1.5ns
1.25ns
CAS Latencies Supported, Least Significant Byte
0Fh
0Ch
0Ah
09h
00h
6, 7, 8
6, 7, 8,
9
6, 7, 8,
9 , 10,
11
6, 7, 8,
9 , 10,
11, 13
1Ch
3Ch
FCh
FCh
6, 7, 8
6, 7, 8,
9
6, 7, 8,
9 , 10,
11
6, 7, 8,
9 , 10,
11, 13
00h
00h
00h
02h
30h
28h
CAS Latencies Supported, Most Significant Byte
15
CMA
08h
1.071ns
Reserved
14
CK0
16
Minimum CAS Latency Time(tAAmin)
17
Minimum Write Recovery Time (tWRmin)
13.125ns
69h
15ns
18
Minimum RAS# to CAS# Delay Time (tRCDmin)
78h
19
Minimum Row Active to Row Active Delay Time (tRRDmin)
20
Minimum Row Precharge Delay Time (tRPmin)
21
Upper Nibbles for tRAS and tRC
22
Minimum Active to Precharge Time (tRASmin), Least Significant Byte
23
Minimum Active to Active/Refresh Time (tRCmin), Least Significatn Byte
24
Minimum Refresh Recovery Time (tRFCmin), Least Significant Byte
110ns
25
Minimum Refresh Recovery Time (tRFCmin), Most Significant Byte
110ns
03h
26
Minimum Internal Write to Read Command Delay Time (tWTRmin)
7.5ns
3Ch
27
Minimum Internal Read to Precharge Command Delay Time (tRTPmin)
28
Upper Nibble for tFAW
37.5ns
30ns
30ns
27ns
01h
00h
29
Minimum Four Activate WIndow Delay Time (tFAWmin), Least Significant Byte
37.5ns
30ns
30ns
27ns
2Ch
F0h
30
SDRAM Optional Features
31
SDRAM Thermal and Refresh Options
32
Module Thermal Sensor
33
SDRAM Device Type
34
Fine Offset for SDRAM Minimum Cycle Time(tCKmin)
35
Fine Offset for Minimum CAS Latency Time(tAAmin)
13.125ns
00h
36
Fine Offset for Minimum RAS# to CAS# Delay Time(tRCDmin)
13.125ns
00h
13.125ns
7.5ns
6ns
6ns
69h
5ns
3Ch
30h
13.125ns
69h
37.5ns
11h
36ns
35ns
34ns
50.625ns 49.125ns 48.125ns 47.125ns
2Ch
20h
18h
10h
95h
89h
81h
79h
00h
00h
F0h
D8h
00h
CAh
70h
7.5ns
3Ch
DLL off Mode, RZQ/6, RZQ/7
83h
No ODTS, No ASR
01h
without TS
00h
Standard Monolithic DRAM Device
1.875ns
1.5ns
1.25ns
1.071ns
00h
00h
00h
JAN. 2011
SERIAL PRESENCE DETECT
Function Supported
Byte
#
Fine Offset for Minimum Row Precharge Delay Time(tRPmin)
38
Fine Offset for Minimum Active to Active/Refresh Delay Time(tRCmin)
CH9
Module Nominal Height
61
Module Maximum Thickness
62
Reference Raw Card Used
63
Address Mapping from Edge Connector to DRAM
CK0
CMA
CF8
CH9
13.125ns
00h
50.625ns 49.125ns 48.125ns 47.125ns
00h
Reserved, General Section
60
64~116
Note
CF8
37
39~59
Hex Value
Function Described
Reserved
00h
30mm
0Fh
Planar Double sides
11h
R/C B, 1.0
21h
Mirrored
01h
-
00h
Reserved
117
Module Manufacturer ID Code, Least Significant Byte
Samsung
80h
118
Module Manufacturer ID Code, Most Significant Byte
Samsung
CEh
119
Module ID: Module Manufacturing Location
Onyang Korea
01h
120
Module ID: Module Manufacturing Date
-
00h
121
Module ID: Module Manufacturing Date
-
00h
122~125 Module ID : Module Serial Number
-
CK0
CMA
23h
70h
16h
1Eh
00h
126
Cyclical Redundancy Code
-
-
55h
17h
127
Cyclical Redundancy Code
-
-
128
Module Part Number
M
60h
C9h
4Dh
129
Module Part Number
3
33h
130
Module Part Number
7
37h
131
Module Part Number
8
38h
132
Module Part Number
B
42h
133
Module Part Number
5
35h
134
Module Part Number
6
36h
135
Module Part Number
7
37h
136
Module Part Number
3
33h
137
Module Part Number
G-die
47h
138
Module Part Number
B
42h
139
Module Part Number
0
30h
140
Module Part Number
-
2Dh
141
Module Part Number
142
Module Part Number
F
H
K
M
46h
48h
4Bh
4Dh
143
Module Part Number
8
9
0
A
38h
39h
30h
41h
144
Module Part Number
Blank
20h
145
Module Part Number
Blank
20h
-
00h
C
146~147 Module Revision Code
43h
148
SDRAM Manufacturer's JEDEC ID Code
Samsung
80h
149
SDRAM Manufacturer's JEDEC ID Code
Samsung
CEh
150~175 Manufacturer's Specific Data
-
00h
176~255 Open for customer use
-
00h
JAN. 2011
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