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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D252
BGD702N
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN
7
8
3
5
9
1
2 input common common
+V
B common common output
DESCRIPTION
APPLICATIONS
CATV systems operating in the 40 to 750 MHz frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC).
handbook, halfpage
1
2
3 5 7
8
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
I
SYMBOL
G p tot
PARAMETER CONDITIONS power gain f = 50 MHz f = 750 MHz total current consumption (DC) V
B
= 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V i
T stg
T mb
PARAMETER
RF input voltage storage temperature operating mounting base temperature
MIN.
18
18.5
MAX.
19
435 dB dB mA
UNIT
40
20
MIN.
MAX.
65
+100
+100
UNIT dBmV
C
C
2001 Nov 02 2
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; V
B
= 24 V; T mb
= 35
C; Z
S
= Z
L
= 75
I
G
S
S
S
X d
V
F
2
SYMBOL p
SL
FL
11
22
21
CTB mod
CSO o tot
PARAMETER power gain slope cable equivalent flatness of frequency response input return losses output return losses phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC)
CONDITIONS f = 50 MHz f = 750 MHz f = 40 to 750 MHz f = 40 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz f = 50 MHz
110 channels flat; V o
= 44 dBmV; measured at 745.25 MHz
110 channels flat; V o
= 44 dBmV; measured at 55.25 MHz
110 channels flat; V o
= 44 dBmV; measured at 746.5 MHz
d im
=
f = 50 MHz f = 450 MHz f = 550 MHz f = 600 MHz f = 750 MHz
61
62
58
Notes
1. f f p q
= 55.25 MHz; V p
= 691.25 MHz; V q measured at f p
+ f q
= 44 dBmV;
= 44 dBmV;
= 746.5 MHz.
2. Measured according to DIN45004B: f f f p q r
= 740.25 MHz; V p
= 747.25 MHz; V q
= 749.25 MHz; V measured at f p
+ f q r
= V o
;
= V o
= V o
f r
6 dB;
6 dB;
= 738.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
MIN.
18
20
19
18
17
16
18.5
0.2
20
19
18
17
16
45
68
5.5
6.5
6.5
7
8.5
435
MAX.
19
2
0.25
+45
58 dB dB dB dBmV dB dB dB dB dB mA
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB
2001 Nov 02 3
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
Table 2 Bandwidth 40 to 600 MHz; V
B
= 24 V; T mb
= 35
C; Z
S
= Z
L
= 75
G
SYMBOL p
SL
FL
S
S
S
11
22
21
CTB
X mod
CSO
PARAMETER power gain slope cable equivalent flatness of frequency response input return losses output return losses phase response composite triple beat cross modulation composite second order distortion
CONDITIONS f = 50 MHz f = 600 MHz f = 40 to 600 MHz f = 40 to 600 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz f = 50 MHz
85 channels flat;
V o
= 44 dBmV; measured at 595.25 MHz
85 channels flat;
V o
= 44 dBmV; measured at 55.25 MHz
85 channels flat;
V o
= 44 dBmV; measured at 596.5 MHz
d im
=
65
60 d
2
V o
F
I tot second order distortion output voltage noise figure total current consumption (DC)
64
Notes
1. f p f q
= 55.25 MHz; V p
= 541.25 MHz; V measured at f p
+ f q q
= 44 dBmV;
= 44 dBmV;
= 596.5 MHz.
2. Measured according to DIN45004B: f f f p q r
= 590.25 MHz; V p
= 597.25 MHz; V q
= 599.25 MHz; V measured at f p
+ f q r
= V o
= V
= V o
f r o
;
6 dB;
6 dB;
= 588.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
70
435
MIN.
19
18
17
45
19
18
17
20
18
18.5
0.2
20
MAX.
19
2
0.2
+45
65
UNIT dB dB dB deg dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dB mA
2001 Nov 02 4
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
Table 3 Bandwidth 40 to 550 MHz; V
B
= 24 V; T mb
= 35
C; Z
S
= Z
L
= 75
G
SYMBOL p
SL
FL
S
S
S
11
22
21
CTB
X mod
CSO
PARAMETER power gain slope cable equivalent flatness of frequency response input return losses output return losses phase response composite triple beat cross modulation composite second order distortion
CONDITIONS f = 50 MHz f = 550 MHz f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 50 MHz
77 channels flat;
V o
= 44 dBmV; measured at 547.25 MHz
77 channels flat;
V o
= 44 dBmV; measured at 55.25 MHz
77 channels flat;
V o
= 44 dBmV; measured at 548.5 MHz
d im
=
67
62 d
2
V o
F
I tot second order distortion output voltage noise figure total current consumption (DC)
64.5
Notes
1. f p f q
= 55.25 MHz; V p
= 493.25 MHz; V measured at f p
+ f q q
= 44 dBmV;
= 44 dBmV;
= 548.5 MHz.
2. Measured according to DIN45004B: f f f p q r
= 540.25 MHz; V p
= 547.25 MHz; V q
= 549.25 MHz; V measured at f p
+ f q r
= V o
= V
= V o
f r o
;
6 dB;
6 dB;
= 538.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
72
435
MIN.
19
18
17
45
19
18
17
20
18
18.5
0.2
20
MAX.
19
2
0.2
+45
67
UNIT dB dB dB deg dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dB mA
2001 Nov 02 5
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
D
E Z p
A2
1 2 3 5 7 8 9
L
A
F
S
W
B c d
U2 Q p y
M B
Product specification
BGD702N e e1 q2 q1 b w M y M B x
M B
SOT115J
U1 q
0 5 scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A max.
A2 max.
b c
D max.
d
E max.
mm 20.8
9.5
0.51
0.38
0.25 27.2
e e1 F
L min.
2.04
2.54
13.75 2.54 5.08 12.7 8.8
p
4.15
3.85
Q max.
2.4
q q1 q2 S
38.1 25.4 10.2 4.2
U1
44.75
44.25
U2 W w
8.2
7.8
6-32
UNC
0.25
x
0.7
y
Z max.
0.1
3.8
OUTLINE
VERSION
SOT115J
IEC
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-02-04
10-06-18
2001 Nov 02 6
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
DATA SHEET STATUS
DOCUMENT
Objective data sheet
PRODUCT
STATUS
DEFINITION
Development This document contains data from the objective specification for product development.
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary data sheet
Product data sheet
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification
The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability
Information in this document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Right to make changes
NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use
NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications
Applications that are described herein for any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP
Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
2001 Nov 02 7
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.
Limiting values
Stress above one or more limiting values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale
NXP
Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license
Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control
This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data
The Quick reference data is an extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products
Unless this data sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
2001 Nov 02 8
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R77/03/pp9 Date of release: 2001 Nov 02
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