Kingston Technology ValueRAM 8GB DDR3 1333MHz Module

Kingston Technology ValueRAM 8GB DDR3 1333MHz Module
Memory Module Specifications
8GB 2Rx8 1G x 64-Bit PC3-10600
CL9 204-Pin SODIMM
Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height may
vary from what is described here.
This document describes ValueRAM's 1G x 64-bit (8GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, memory
Row Cycle Time (tRCmin)
49.5ns (min.)
module, based on sixteen 512M x 8-bit FBGA components. The
260ns (min.)
SPD is programmed to JEDEC standard latency DDR3-1333
Refresh to Active/Refresh
Command Time (tRFCmin)
timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold
Row Active Time (tRASmin)
36ns (min.)
contact fingers. The electrical and mechanical specifications
Power (Operating)
UL Rating
94 V - 0
Operating Temperature
0o C to 85o C
Storage Temperature
-55o C to +100o C
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
*Power will vary depending on the SDRAM used.
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component
are as follows:
9 cycles
Continued >>
Document No. VALUERAM1032-001.A00
Page 1
(units = millimeters)
Document No. VALUERAM1032-001.A00
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