SBF4089Z
SBF4089Z
SBF4089ZDC
to 500MHz,
Cascadable
InGaP/GaAs
HBT MMIC
Amplifier
DC to 500MHz, CASCADABLE InGaP/GaAs
HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
Features
RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied




S-Parameters vs Frequency +25c
16
InGaP HBT
s22
-5
14.5
Gain(dB)
SiGe HBT
GaAs pHEMT

s11
15
SiGe BiCMOS

0
s21
15.5
14
-10
13.5
13
-15
IRL,ORL(dB)
GaAs MESFET
Si BiCMOS
IP3 =42dBm at 240MHz
Stable Gain Over
Temperature
Robust 1000V ESD, Class 1C
Operates From Single Supply
Low Thermal Resistance
Applications
GaAs HBT




Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
PA Driver Amplifier
Wireless Data, Satellite
Terminals
12.5
Si CMOS
12
Si BJT
-20
11.5
GaN HEMT
11
0
InP HBT
100
200
300
400
500
600
700
800
-25
900
Freq
RF MEMS
LDMOS
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Small Signal Gain
14.9
dB
70MHz
14.8
16.3
dB
240MHz
14.7
16.2
dB
500MHz
Output Power at 1dB Compression
20.1
dBm
70MHz
20.1
dBm
240MHz
18.4
19.9
dBm
400MHz
Output Third Order Intercept Point
40.0
dBm
70MHz
42.0
dBm
240MHz
39.0
41.0
dBm
400MHz
Input Return Loss
13.0
17.0
dB
500MHz
Output Return Loss
12.0
16.0
dB
500MHz
Noise Figure
3.3
4.3
dB
500MHz
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
82
90
98
mA
Thermal Resistance
43
°C/W
junction to lead
Test Conditions: VS =8V, ID =90mA Typ., TL =25°C. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =33. Data with Application Circuit.
13.3
13.2
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 8
SBF4089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
150
mA
Device Voltage (VD)
6
V
0.8
W
Max Operating Dissipated Power
Max Input Power Rating
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
ESD Rating - Human Body Model
(HBM)
15
dBm
+150
°C
-40 to +85
°C
+150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Class 1C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD
Typical RF Performance at Key Operating Frequencies
Parameter
Unit
70MHz
100MHz
240MHz
400MHz
500MHz
850MHz
Small Signal Gain
dB
14.9
14.9
14.9
14.8
14.7
14.3
Output Third Order Intercept Point
dBm
40.0
40.5
42.5
41.0
40.0
35.1
Output Power at 1dB Compression
dBm
20.1
20.1
20.1
19.9
20.1
18.1
Input Return Loss
dB
18
22
22
21
21
19
Output Return Loss
dB
15
16
17
19
21
18
Reverse Isolation
dB
18
18
18
18
18
18
Noise Figure
dB
3.2
3.3
3.3
3.3
3.3
3.3
Test Conditions: VS =8V, ID =90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm. TL =25°C, RBIAS =33, ZS =ZL =50, App circuit.
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS111011
SBF4089Z
TOIP vs Temp
P1dB vs Temp
20
19.5
TOIP (dB)
Output Power (dBm)
20.5
19
18.5
+25c
18
-40c
17.5
+85c
17
50
250
450
650
45
43
41
39
37
35
33
31
29
27
25
+25c
-40c
+85c
50
850
250
450
650
850
Frequency(MHz)
Frequency(MHz)
NF (dB)
Noise Figure vs Temp
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
+25c
-40c
+85c
50
250
450
650
850
Frequency(MHz)
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 8
SBF4089Z
Test Conditions: VS =8V, RBIAS =33, ID =90mA, T=+25°C,
S11 vs. Frequency
S 21 vs. Frequency
15.1
-10
+25c
15
-40c
-12
-14
-40c
+85c
14.8
Gain (dB)
S11 (dB))
+25c
14.9
+85c
-16
16
-18
14.7
14.6
14.5
14.4
-20
14.3
-22
14.2
14.1
-24
0
100
200
300
400
500
600
700
800
0
900
200
400
Frequency(MHz)
800
1000
S22 vs. Frequency
S12 vs. Frequency
-12
-16
+25c
-16.5
-40c
+25c
-14
+85c
-17
-40c
+85c
Return Loss((dB)
-17.5
S12(dB))
600
Frequency(MHz)
-18
-18.5
-19
-16
-18
-20
-22
-19.5
-20
0
100
200
300
400
500
600
700
800
-24
900
0
Frequency(MHz)
100
200
300
400
500
600
700
800
900
Frequency(MHz)
Bias sweep vs Temp
Current (mA)
100
90
+25c
80
-40c
+85c
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
Source Voltage (V)
Note: Output Return Loss can be improved at low end of band with L1 selection.
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS111011
SBF4089Z
Application Circuit Schematic
R1 (R BIAS )
VS
1 uF
C4
1000
pF
L1
R F in
1
C5
4
SBF4089Z
R F out
3
2
12nH
C6
L2
Application Circuit Element Values
Reference Designator
70MHz
100MHz
240MHz
500MHz
850MHz
C5, C6
1uF
1000pF
1000pF
220pF
100pF
C4
100pF
100pF
100pF
100pF
68pF
L1
6.8uH
1.2uH
1.2uH
68nH
33nH
L2
6.8nH
12nH
12nH
6.8nH
6.8nH
Recommended Bias Resistance for ID =90mA
Supply Voltage (VS) (Volts)
7.5
8
10
12
Bias Resistance ()
27
33
56
75
Note=RBIAS provides DC bias stability over temperature.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 8
SBF4089Z
Evaluation Board Layout
Mounting Instructions
1. Note: For broadband RF unconditional stability do not put GND vias under the exposed backside GND paddle.
2. Solder the copper pad on the backside of the device package to the ground plane.
3. USe a large ground pad area with many plated through-holes as shown.
4. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31mil thick FR-4 board with 1 ounce
copper on both sides.
Pin
1
Function
RF IN
2, 4
GND
3
RF OUT/BIAS
6 of 8
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
RF output and bias pin. DC voltage is present on this pin therefore a DC-blocking capacitor is necessary for
proper operation.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS111011
SBF4089Z
Suggested Pad Layout
0.3255 [8.27]
0.0750 [1.91] (2X)
0.0640 [1.63] (2X)
0.0540 [1.37] (2X)
0.0250 [0.64] (2X)
NOTE: For broadband RF
unconditional stability do not
put vias under exposed gnd
0.0775 [1.97]
0.2560 [6.50]
0.0750 [1.91]
0.0899 [2.28]
0.0449 [1.14]
INPU T/OU TPU T TRA CE
CE NTER LIN E
0.0600 [1.52]
0.0450 [1.14]
0.0506 [1.29]
0.0800 [2.03]
0.0420 [1.07]
0.0270 [0.69]
Ø0.0200 [Ø0.51] GND Via 9X
0.0540 [1.37]
DE VICE
CEN TER LINE
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 8
SBF4089Z
Part Identification.
Ordering Information
8 of 8
Ordering Code
Description
SBF4089Z
7” Reel with 1000 pieces
SBF4089ZSQ
Sample bag with 25 pieces
SBF4089ZSR
7” Sample reel with 100 pieces
SBF4089ZPCK1
850MHz, 8V Operation PCBA with 5-piece sample bag
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS111011
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement