STMicroelectronics TVS - Diodes en.brhealth

STMicroelectronics TVS - Diodes en.brhealth
Semiconductor solutions for
healthcare applications
STMicroelectronics
www.st.com/medical
At STMicroelectronics, we have developed our healthcare product and service portfolio based on long-term
research. We are involved in government-funded programs, collaborate with international universities and are a
member of acknowledged healthcare consortia, such as the Continua Health Alliance.
Healthcare market segments and application examples
Portable, telehealth monitoring
Wellness, fitness, assisted living
Clinical, diagnostics and therapy
Blood pressure monitors
Temperature meters
Blood glucose meters
Blood oximeters
Hearing aids
Portable ECG
Pedometers
Heart rate monitors
Fall detection
Wheelchairs
Hospital beds
Drug dispensers
Patient monitoring
Respirators
Infusion pumps
Automated external defibrillators
(AED)
Electrocardiograms (ECG)
Medical imaging
Ultrasound
Magnetic resonance imaging (MRI)
Positron emission tomography (PET)
Endoscopes
Our position among the top-ranked semiconductor manufacturers, combined with strong cooperation with global
healthcare leaders, enables us to develop optimized process technology and to design semiconductor devices
with best-fit characteristics.
We are addressing the healthcare market with a broad portfolio of devices, such as discrete devices, low-power
microcontrollers, image sensors, memories, MEMS (micro-electro-mechanical systems), thin-film batteries and
analog, digital and mixed-signal ICs.
In addition to our standard products, ST offers our customers the possibilities of application-specific devices and
access to our leading-edge silicon processes and package technologies for customer-designed products to give
added performance and value to the end product.
Let STMicroelectronics’ experience in the healthcare and medical markets help you meet your customers’ needs.
Typical healthcare application diagram
Sensors
Real world
AFE
Temperature
Pressure
Light
Vibration
Chemical
Air flow
Acoustic
Humidity
Hall
Ultrasound
………
Amp
Display
interface
Display
User
interface
Keypad
Audio
interface
Speaker
ADC
Control unit
Connectivity
ZigBee
Antenna
Protection
Bluetooth
USB
Memory
Power management
AC-DC
converter
2
Battery
charger
DC-DC
converter
Ethernet
Data exchange
Featured products
HMx011
Integrated diagnostic-quality bio-potential acquisition IC with 1, 2 or 3 differential channels
The HMx01D devices are fully integrated, diagnostic-quality bio-potential acquisition systems with 1, 2 or 3 differential
channels. A fully-integrated high-pass filter removes the half-cell DC value so the channels work with the AC component only.
Each channel provides high resolution and low-noise conversion of bio-potential signals up to 10 kHz. The input connection
circuit matrix guarantees maximum flexibility in terms of electrodes, cables and connectors. The D versions include a dedicated
impedance measurement channel that can be used to measure both body impedance average value and body impedance
variation due to respiration. This channel delivers both the real and the imaginary parts of the body and the breathing
impedances.
Key features
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1, 2 or 3 bio-potential acquisition
channels with integrated analog
high-pass filters
1 bio-impedance measurement
channel (D version) with 2- or 4-wire
measurement
Integrated configurable digital
filtering and preprocessing
CIP
CIN
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Current
injection
IN1P
IN1N
IN2P
IN2N
RA
IN3P
IN3N
Multi master/slave configuration
to support up to 16 channels (12
bio-potential acquisitions and 4 bioimpedance channels)
SPI serial interface
Low supply voltage: 1.7 to 3.6 V
CMRR: -126 dB
Input
connection
circuit
Body
impedance measurement
DC and AC
contact check
ECG and pace
maker channel # 1
DC and AC
contact check
ECG and pace
maker channel # 2
DC and AC
contact check
ECG and pace
maker channel # 3
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Maximum data rate: 10 KSPS
Less than 2 mW per channel at full
bandwidth and resolution
Internal or external clock
Impedance
bus
Ch1 bus
HM301D
Digital filtering
and
preprocessing
Ch2 bus
SPI
slave
MISO
MOSI
SS
SCK
Pace maker
detection
Ch3 bus
Bat_bus
RL
LL
RLD
WCT
Shield
WCT circuit
and drivers
Voltage
references
Timing
logic and clock
Low-voltage supervisory
and battery charge check
Note:1. For the complete part number list, refer to the ECG unit product table at the end of the brochure.
3
STHV748
Integrated high-performance ultrasound pulse controller
The STHV748 is a quad, high-voltage fully-monolithic pulser IC mainly intended for medical ultrasound imaging applications.
An ultrasound imaging system transmits ultrasound waveforms generated from a piezoelectric transducer. As soon as the
transmission ends, the same transducer is then switched to receive mode and the echoes, are then converted into lowvoltage signals. These signals are further conditioned, followed by post processing, to give the final image. The STHV748
correctly drives the piezoelectric transducer during the transmission phase and routes the received echoes to the receiving
chain by means of an integrated T/R switch. The excellent STHV748 pulse symmetry (5 levels), while exciting the piezoelectric
transducer, delivers low second-order distortion resulting in better image quality.
Key features
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0 to ±90 V output voltage
Up to 20 MHz operating frequency
Embedded low-power, floating
high-voltage drivers
±2 A source and sink current in PW
and CW modes
Greater than 42 dB secondharmonic suppression
Dedicated half bridge for continuous
wave operations
Fully-integrated clamping-toground function
Fully-integrated T/R switch and
noise blocking diodes
Latch-up free using HV SoI
technology
Tx
beamformer
T/R
switch
Rx
beamformer
4
HV
transmitter
Pulser
To/from probe
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ADC
PGA
TGC
LNA
8/32‑bit ultra‑low‑power MCUs
STMicroelectronics’ ultra‑low‑power portfolio includes a full range of 8‑bit and 32‑bit MCUs. It addresses most healthcare
applications requiring reduced current consumption, from ultra‑simple, cost‑optimized feature needs to complex,
high‑performance requirements.
Key features
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Platform for 8‑bit STM8L and 32‑bit STM32L MCUs
ST’s 130 nm ultra‑low‑leakage process technology – speed and power
consumption are independent of MCU power supply
Ultra‑low voltage supply: 1.65 to 3.6 V
STM8L
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8-bit MCU: up to 16 MIPS at 16 MHz
2 to 64 Kbytes of embedded Flash,
up to 4 Kbytes of SRAM and up to
2 Kbytes of EEPROM
Up to four ultra-low-power modes:
down to 350 nA with SRAM and
context retention
Run mode dynamic consumption
down to 150 μA/MHz
Free touch‑sensing library
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STM8L15x consumption values
Typical @ 25 °C
192 µA/MHz
90 µA/MHz
5.1 µA
Dynamic
Run
From Flash
3.0 µA
Dynamic
Run
Low-power
Run
@ 32 kHz
From RAM
1.2 µA
Low-power
Wait
@ 32 kHz
Notes:
- POR/PDR on
- BOR option at 2.4 µA
- Run and Wait consumption values are independent of VDD
QQ
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32-bit ARM Cortex™-M3:
up to 33 DMIPS at 32 MHz
Pin‑to‑pin compatibility with
STM32F series (except VBAT)
32 to 384 Kbytes of embedded
Flash, up to 48 Kbytes of SRAM and
up to 12 Kbytes of data EEPROM
Six ultra-low-power modes:
down to 300 nA
Ultra-low-power dynamic modes:
low-power run down to 9 µA;
low-power sleep down to 4.9 µA
with one timer
Economical run mode consumption
down to 230 μA/MHz from Flash
at zero-wait state with dynamic
voltage scaling (3 ranges)
Active
Halt with
RTC
0.4 µA
Halt
- RAM content preserved
- Startup time from active Halt 5 µs
- Active Halt and Halt values measured at VDD = 1.8 V
STM32L consumption values
Typical @ 25 °C
230 µA/MHz
186 µA/MHz
Run
Run
From Flash
Range 3
From RAM
Range 3
9 µA
4.9 µA
Low-power
Run
@ 32 kHz
Low-power
sleep
+ 1 timer
@ 32 kHz
Notes:
- POR/PDR on
- BOR option at 2.4 µA
- Run and Sleep consumption value are independent of VDD
- Low-power Run and Low-power Sleep are measured with Flash off
1.3 µA/
0.45 µA
Stop
with or
without
RTC
1.0 µA/
0.3 µA
Standby
with or
without RTC
- RAM content preserved
- Startup time from Stop 8 µs
- Stop and standby values measured at VDD = 1.8 V
Flash size (bytes)
384 K
Performance
(MIPS)
STM32L
Advanced analog functions down
to 1.8 V
Fast wake up
On‑board security and safety
features for critical applications
STM8L
STM32L
2K
20 pins
Integration (features)
144 pins
Pin count
5
INEMO-M1
The smallest 9-axis inertial system of the iNEMO® SoB family
INEMO-M1 is the first member of the iNEMO system on board (SoB) family. It integrates multiple sensors with a powerful
computational core and provides reliable, drift-free 3D orientation estimation (roll, pitch and yaw, quaternions, rotation matrix),
as well as sensor data.
This 9 degrees-of-freedom inertial system represents a fully integrated solution that can be used in numerous applications such
as virtual reality, augmented reality, image stabilization, human machine interfaces, robotics and inertial body tracking.
A complete set of communication interfaces in a very small size form factor (13 x 13 x 2 mm) make the INEMO-M1 system on
board a flexible solution for effortless orientation estimation in embedded applications.
Key features
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Flexible interfaces: CAN, USART,
SPI and I2C serial interfaces;
full-speed USB 2.0
Two power supply options: internal
regulator (3.6 to 6 V), external
regulated voltage (2.4 to 3.6 V)
Embedding real-time algorithm to
calculate attitude and heading (roll,
pitch and yaw angles, quaternions
or rotation matrix)
In application programming
interfaces for firmware upgrading
LDS3985
Voltage regulator
LSM303DLHC
3-axis accelerometer
3-axis magnetometer
Host
MCU
STM32F103
MCU
3-axis gyroscope
L3G4200D
Resonator
INEMO-M1
LIS3DH
Ultra-low-power accelerometer
The LIS3DH is an ultra-low-power, high-performance 3-axis linear accelerometer belonging to the nano family, with a digital
I2C/SPI serial interface standard output. The device features ultra-low-power operating modes that allow advanced power
saving and smart embedded functions. The LIS3DH has dynamically selectable full scales of ±2g/±4g/±8g/±16g and is
capable of measuring accelerations with output data rates from 1 Hz to 5 kHz. The self-test capability allows the user to check
the functioning of the sensor in the final application.
Key features
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Ultra-low power consumption:
down to 2 μA
±2g/±4g/±8g/±16g dynamically
selectable full scale
Embedded 96-level FIFO of 16-bit
data output
Embedded temperature sensor and
ADC converter
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6D/4D orientation detection
Wide supply voltage range: 1.7 to
3.6 V
Fully programmable interrupt
generator
Wake-up and free-fall detection
Click and double-click recognition
MP34DT01
High-performance, low-power digital MEMS microphone with 63 dB SNR
The MP34DT01 is an ultra-compact, low-power, omnidirectional, digital MEMS microphone built with a capacitive sensing
element and an IC interface. The sensing element that detects the acoustic waves is manufactured using a special silicon
micromachining process dedicated to produce audio sensors. The IC interface is manufactured using a CMOS process so
that a dedicated circuit may be designed to provide a digital signal externally in PDM format. The MP34DT01 has an acoustic
overload point of 120 dBSPL with a 63 dB signal-to-noise ratio and -26 dBFS sensitivity.
Key features
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Single supply voltage
Low power consumption
120 dBSPL acoustic overload point
63 dB signal-to-noise ratio
Omnidirectional sensitivity
–26 dBFS sensitivity
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PDM output
HCLGA package
Top port design
SMD compliant
EMI shielded
LPS331AP
High-resolution digital pressure sensor
The LPS331AP is an ultra compact absolute piezoresistive pressure sensor. It includes a monolithic sensing element and an IC
interface to take the information from the sensing element and to provide a digital signal to the external world.
The sensing element consists of a suspended membrane formed inside a single mono-silicon substrate. It is capable of
detecting pressure and is manufactured using a dedicated process developed by ST, VENSENS.
Key features
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260 to 1260 mbar absolute
pressure range
High-resolution mode:
0.020 mbar RMS
Low power consumption:
QQ Low-resolution mode: 5.5 µA
QQ High-resolution mode: 30 µA
High overpressure capability:
20x full scale
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Embedded temperature
compensation
Embedded 24-bit ADC
Selectable ODR from 1 Hz to 25 Hz
SPI and I2C interfaces
Supply voltage: 1.71 to 3.6 V
High shock survivability: 10000 g
LDCL015XX
150 mA capless ultra-low-drop linear regulator simplifies power management designs
The LDCL015XX provides 150 mA from an input voltage ranging from 1.8 to 5.5 V, with a typical dropout voltage of 50 mV. It
is stable with no input or output capacitor. Low quiescent current, low noise and capless operation make it suitable for lowpower battery-powered applications and reduces the board size required. Typical power supply rejection ratio is 52 dB at low
frequencies, and starts to roll off at 10 kHz. The enable logic control function puts the LDCL015XX in shutdown mode, reducing
the total current consumption to less than 1 μA. The device also includes short-circuit constant-current limit and thermal
protection.
Key features
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No input or output capacitor
required
Input voltage: 1.8 to 5.5 V
Very low drop: 50 mV at 100 mA
load
± 2% output voltage accuracy
Output voltage tolerance: ± 3%
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Low noise
150 mA guaranteed output current
Available in fixed and adjustable
output voltages, from 0.8 V in
100 mV steps
Internal current and thermal limit
7
M24LR16E and M24LR64E
Dual Interface EEPROM
The M24LR16E and M24LR64E feature both an I2C and an RF interface, and so provide the flexibility to remotely program or
update electronic products anytime during their lifetime and anywhere in the supply chain. RFID and NFC compatible, they are
used to read measurements from portable healthcare applications and update the configuration data of clinical devices without
powering on the device. They also feature an innovative energy harvesting function which can enable battery-less designs or
greatly improve battery lifetime.
Key features
QQ I2C
interface
1.8 to 5.5 V wide operating
voltage
QQ 400 kHz across the entire voltage
range
13.56 MHz RF interface
QQ ISO 15693 industry standard:
passive RF technology – no
power needed to operate in RF
QQ NFC compatible
QQ
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Memory
QQ User memory: 4-Kbit, 16-Kbit or
64-Kbit EEPROM
QQ Reliability: 40-year data retention
and 1 million erase-write cycles
QQ Data protection: unique and
flexible 32-bit password
protection scheme
Energy harvesting
QQ V
pin providing the energy
OUT
harvested from the RFID reader
STAC3932B/F, STAC4932B/F
100 V RF power MOSFETs in STAC® package for 1.5T and 3T MRI
A new generation of 100 V RF power MOSFETs housed in STAC® air-cavity packages and capable of delivering an output
power up to 1.2 kW for industrial, scientific and medical applications such as 1.5T and 3T magnetic resonance imaging.
The new air-cavity technology enables lower thermal resistance, lower weight and reduced cost compared to devices in
ceramic packages.
Key features
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Frequency: 61.5 MHz (1.5T MRI),
123 MHz (3T MRI)
Supply voltage:100 V
Output power: Up to 1.2 kW
Gain: > 23 dB
Efficiency: > 60%
25% lower thermal resistance
(RTHJ-C)
4 times higher MTTF
Cost-effective solution versus
ceramic packages
Available in two mounting
configurations:
QQ Bolt-down
QQ Surface mount with AgSnCu
back solder finishing
EMI filtering and signal conditioning
Integrated EMI filtering and ESD protection:
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EMIF1: Strong attenuation of 900 MHz and higher frequencies for different sockets including keypads and touch pads,
memory cards, audio lines
ECMF1: High-performance common-mode noise filtering with integrated ESD protection for high-speed serial interfaces for
display and camera/imaging systems with serial interfaces, High Speed USB 2.0
IPD for RF front-end: integrated
passive device (IPD) solutions based
on glass substrate can offer a low
parasitic and high-Q solution suitable
for RF applications including:
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Matched balun for 2.4 GHz
applications such as Bluetooth or
WLAN (using 50/50, 50/100 or
custom matching)
Diplexers for applications sharing
the same antenna for 2.4 and 5
GHz WLAN
Band-pass filter for 5 GHz WLAN
ESD/EOS protection devices
Protection devices come in 2 families:
Transient voltage suppressors (TVS or Transil™)
Crowbar diodes (Trisil™)
These devices protect circuits against:
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Electrostatic discharge (ESD) generated by contact with a person or a machine (IEC 61000-4-2)
Electrical overstress (EOS) generated by lightning strikes or AED generated overvoltages (IEC 61000-4-5)
Key features
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Wide portfolio
QQ TVS from 100 W to 5000 W
QQ ESD array – including low
capacitive arrays
QQ Crowbar diodes
QQ Crowbar diode arrays
Wide range of applications
QQ Airway clearance
QQ Glucometers
QQ Blood pressure
QQ Monitoring stations
Can withstand
high power surges
Transparent in
normal circuit
conditions, even in
high-speed
data interfaces
Easy to design
whatever circuit
constraints
Robustness
Giga transparency
Design integration
Protection devices
Note:1. For the complete part number list, refer to the EMI filtering and signal conditioning product table at the end of the brochure
9
STM8L
STM32L
STM32F
SPEAR3x0
Microcontrollers
Ultra-low-power 8-bit MCUs, 1.65 to 3.6 V, up to 6 MIPS, 2 to 64 Kbytes
Ultra-low-power 32-bit MCUs, 1.65 to 3.6 V, up to 33 DMIPS, 32 to 384 Kbytes
32-bit MCUs, 1.7 to 3.6 V, up to 68 DMIPS, 16 Kbytes to 1 Mbyte
32-bit MPU based on ARM926EJ-S™ core with up to 400 DMIPS
M24LR16E-R
M24LR64-R
Dual Interface EEPROM
16-Kbit Dual Interface EEPROM with password protection, energy harvesting and RF status functions
64-Kbit Dual Interface EEPROM with password protection
LIS331DLx
LIS3DH
LIS344ALH
L3G4200D
LSM303DLHx
L3GD20
LSM330DL
MP45DT02
MP34DB01
LPS001WP
LPS331AP
STMT04/5/7
STMPE812A
STMT14x
STTS751
STLM20
MEMS and sensors
Digital-output motion sensors, low-power and high-performance 3-axis accelerometer
MEMS digital-output motion sensor, ultra-low-power, high-performance 3-axis nano accelerometer
MEMS inertial sensor, high-performance 3-axis ±2g/±6g ultra-compact linear accelerometer
Digital-output, low-power and high-stability 3-axis gyroscope
Sensor modules, 3-axis accelerometer and 3-axis magnetometer
3-axis digital gyroscope
Inertial module (3 accelerometers, 3 gyroscopes)
Omnidirectional digital MEMS microphone, 58 dB signal-to-noise ratio and -26 dB sensitivity
Omnidirectional digital MEMS microphone, 62 dB signal-to-noise ratio and -26 dB
MEMS pressure sensor, 300 to 1100 mbar absolute digital output barometer
MEMS pressure sensor, 260 to 1260 mbar absolute digital output barometer
S-Touch® - FingerTip, multi-touch capacitive touchscreen controllers from 4 to 7 inch
S-Touch® - FingerTip, multi-touch capacitive touchscreen controllers from 4 to 7 inch
STMTouch - Proximity or single touch key touch controllers
2.25 V low-voltage local digital temperature sensor
Ultra-low current, 2.4 V precision analog temperature sensor
STHV748
Pulser ICs
5-level, ± 90 V, 2 A high-speed pulser with four independent channels and integrated Tx/Rx switch
EMIF01-1003M3
EMIF04/06/08-1005Mx
EMIF02-SPK02F2
EMIF06-mSD03F3
ECMF06-6AM16
ECMF02-2BF3
ECMF04-4CMX8
EMIF08-LCD04M16
BAL2690D3U
DIP2450-01D3
BPF50-01D3
EMI filtering and signal conditioning
1-line EMI filter with ESD protection for keypads
4/6/8-line EMI filters with ESD protection
2-line EMI filter and ESD protection
6-line EMI filter and ESD protection
6-line common-mode filter with ESD protection
2-line common-mode filter with ESD protection
2-line CMF including ID and VBUS ESD protection
8-line LC filter and ESD protection
2.4 GHz matched balun for STLC2690
Diplexer for 2.4 and 5 GHz
Band-pass filter for 5 GHz WLAN
SPZB32W1xx
SPBT2532C2
ST802RT1
STM32W
Connectivity ICs
IEEE 802.15.4 modules
Bluetooth module
10/100 real-time Ethernet 3.3 V transceiver
STM32 with embedded 2.4 GHz IEEE 802.15.4 radio, low-cost wireless network implementation
HM301
HM201
HM101
ECG unit
3-channel integrated diagnostic quality ECG analog front end
2-channel integrated diagnostic quality ECG analog front end
1-channel integrated diagnostic quality ECG analog front end
10
TSV85x
LMV82x
TS33x
LMV3x
TS302x
TS3011
TSV6x
Amplifiers and comparators
Micropower op-amps, 180 µA/1.3 MHz with shutdown
Standard low-power op-amps, 400 µA/5.5 MHz with shutdown
Micropower low-voltage rail-to-rail comparators
Low-cost, low-power rail-to-rail input/output op-amps
Rail-to-rail 1.8 V high-speed micropower comparators
Rail-to-rail high-speed comparator
Rail-to-rail input/output CMOS op-amps
STLA02
STLD41
STPxCMP
STLD20D/40D
L6924D
L6924U
STw4102
STC3100
L6920DB
L6920D
ST8R00
L6928
STLQ50
STLQ015
ST715
LD39115J
LD59015
LDLN015
LDCL015
LM4041
STBB2J
ST1S15J
STBB1
VIPERxx
Power management
White LED driver/backlighting
White LED driver/backlighting
Driver/backlighting
White LED driver/backlighting
Lithium battery charger
USB compatible lithium battery charger
Dual input Li-ion battery charger with gas gauge
Battery monitor for gas gauge applications
0.8 A step-up, low IQ, down to 0.6 VIN
1 A step-up, low IQ, down to 0.6 VIN
1 A step-up, DFN8 (4 x 4 mm) package
Sync step-down converter, 95 % 2 to 5.5 VIN
50 mA, 3 μA supply current, low drop linear regulator
150 mA, 1.7 μA supply current, low drop linear regulator
85 mA, very low quiescent current LDO regulator
150 mA, miniature high-performance LDO regulator
150 mA, very high PSRR, low-noise LDO regulator
150 mA ultra-low noise LDO
150 mA capless LDO
0.1% low consumption shunt voltage reference
800 mA, high-efficiency buck-boost converter in CSP package
500 mA, high-efficiency buck converter in CSP package
Dual-mode, 1 A IOUT buck-boost voltage regulator
VIPerPlus family of high-performance offline high-voltage converters
L639x
L62xx
L6470
L6460
L6474
ASSP for motor control
MOSFET IGBT smartDRIVE gate drivers integrating advanced current sensing, comparator and operational amplifier
powerSPIN – monolithic motor-driver platform for DC, BLDC and stepper motors
dSPIN – monolithic digital microstepping motor driver for stepper motors
flexSPIN – monolithic multi-motor driver with microstepping for stepper and DC motors
Monolithic microstepping driver with SPI and diagnostics
DSILC6-4xx
ESDA14V2BP6
ESDALC5-1BM2
ESDAVLC8-1BM2
SMM4F
ESDALCL - xxx
USBULC6
ESDA-1K
HSP061-4NY8
SLVU2.8
Protection devices
Ethernet, LVDS, USB 2.0 15 kV ESD protection
8 V and 12 V keyboard/button/audio ESD protection
1-line bidirectional ESD protection, 8 pF
1-line bidirectional ESD protection, 4 pF
2.5 kW, flat package, ESD overvoltage reverse polarity protection Transil™
ESD array, low leakage (1 nA), low capacitance (1.5 pF), 1 to 4 lines
USB 2.0 high-speed 15 kV ESD protection
450 W EOS protection in SOD-523 package
High-speed protection, 2 x 1 mm flow-through package
Gigabit Ethernet protection
11
STUSB02E/03E
STOTG04
STMPE1801
STMPE2403
Interface ICs
USB transceivers
USB On-The-Go
18-bit enhanced port expander with keypad controller
24-bit enhanced port expander with keypad and PWM controller
STL120N2VH5
ST14N3LLH5D1
STS10DN3LH5
STL65DN3LLH5
STL15DN4F5
STD30NF60LT4
STB9NK60ZT4
STY139N65M5
ST1NK80D2
ST1N105K3D2
STGW45HF60WD
STGW30N120KD
STGW30NC120HD
SD293x/393x
STAC3932B/F
STAC4932B/F
Power transistors
20 V, n-channel, super logic level, power MOSFET in PowerFLAT 5x6
30 V, n-channel, logic level power MOSFET in die form
30 V, dual n-channel, logic level power MOSFET in SO-8
30 V, dual n-channel, logic level power MOSFET in PowerFLAT 5x6
40 V, dual n-channel power MOSFET in PowerFLAT 5x6
60 V, n-channel logic level power MOSFET in DPAK
600 V, n-channel power MOSFET in D2PAK
650 V, n-channel power MOSFET in Max247
800 V, n-channel power MOSFET in die form
1050 V, n-channel power MOSFET in die form
45 A, 600 V, n-channel advanced planar PT IGBT in TO-247
N-channel 30 A, 1200 V short circuit rugged IGBT with ultrafast diode
N-channel 30 A, 1200 V IGBT with ultra-fast diode
N-channel RF power MOSFETs
1 kW, 100 V RF power MOSFET in STAC® package for 1.5T and 3T MRI
STAC® package for 1.5T and 3T MRI
M41T62LC6F
M41T6X
M41T83/93
M41ST85
M41ST87
M48Txx
Clocks and timing circuits
World's smallest RTC with embedded crystal in LCC8 3.2 x 1.5 mm package
Low-power I2C RTC with alarm, 32 kHz output or programmable watchdog functions, 1.3 to 4.4 V operation
I2C/SPI RTC with analog calibration, alarm, watchdog, 32 kHz and reset functions
3.0/3.3 V I²C combination serial RTC, NVRAM supervisor and microprocessor supervisor
I2C RTC and NVRAM supervisor with anti-tamper detection function
Non-volatile SRAM, 3 to 5.5 V with alarm, watchdog timer
ST1G3236
ST2329B
ST2129B
ST2149B
STG719
Level translators and analog switches
1-bit level shifter general purpose, 1.2 to 3.6 V, DFN6 1.0 x 1.2 mm
2-bit level shifter for I²C, 1.65 to 5.5 V, QFN8 1.2 x 1.4 mm
2-bit general-purpose level shifter, 1.65 to 5.5 V, QFN8 1.2 x 1.4 mm
4-bit level shifter general purpose, 1.65 to 5.5 V, QFN12 2.0 x 1.7 mm
Ultra-low leakage current (0.35 nA max at 85 °C) SPDT switch
M24128-BFCS6TP/A
M24256-BRCS6TP/A
M95256-RCS6TP/A
M24M01-RAW21/90
M24M02-DR
128-Kbit I2C in WLCSP form
256-Kbit I2C in WLCSP form
256-Kbit SPI in WLCSP form
1-Mbit I2C in wafer form
2-Mbit serial I2C bus EEPROM
EEPROM
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PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
© STMicroelectronics - April 2012 - Printed in United Kingdom - All rights reserved
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Order code: BRHEALTH0412
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