SST200/200A N-Channel JFETs
SST200/200A
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
VGS(off) (V)
V(BR)GSS Min (V)
gfS Min (mS)
IDSS Min (mA)
-0.3 to -0.9
-25
0.25
0.15
FEATURES
D
D
D
D
Low Cutoff Voltage: <0.9 V
High Input Impedance
Very Low Noise
High Gain: AV = 80 @ 20 mA
BENEFITS
APPLICATIONS
D High Quality Low-Level Signal
Amplification
D Low Signal Loss/System Error
D High System Sensitivity
D
D
D
D
Mini-Microphones
Hearing Aids
High-Gain, Low-Noise Amplifiers
Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The SST200/200A features low leakage, very low noise and
low cutoff voltage for use with low-level power supplies. The
SST200/200A is excellent for battery powered equipment and
low current amplifiers such as mini-microphones.
The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads)
packages, provide surface-mount capability and is available in
tape-and-reel for automated assembly.
For applications information see AN102 and AN106.
SOT-323
(SC-70 3-LEADS)
TO-236
(SOT-23)
D
1
D
3
S
Document Number: 70976
S-31623—Rev. E, 01-Sep-03
2
1
G
3
S
G
2
Top View
Top View
SST200 (S2)*
*Marking Code for TO-236
SST200A (C)*
*Marking Code for SOT-323
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SST200/200A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Power Dissipation
To-236 (SOT-23)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
SC-70b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 1.2 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
V(BR)GSS
IG = -1 mA , VDS = 0 V
-25
VGS(off)
VDS = 15 V, ID = 1.0 mA
-0.3
VDS = 15 V, VGS = 0 V
0.15
Typa
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
IDSS
IGSS
VGS = -20 V, VDS = 0 V
V
-0.9
-2
-1
TA = 125_C
0.7
mA
-100
pA
nA
IG
VDG = 10 V, ID = 0.1 mA
-2
Drain Cutoff Current
ID(off)
VDS = 15 V, VGS = -5 V
2
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Common-Source
Forward Transconductance
gfs
VDS = 15 V, VGS = 0 V
f = 1 kHz
0.7
mS
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
pA
Dynamic
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 10 V, VGS = 0 V
f = 1 kHz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
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2
0.25
4.5
pF
1.3
6
nV⁄
√Hz
NPA
Document Number: 70976
S-31623—Rev. E, 01-Sep-03
SST200/200A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
0.8
1.6
0.7
1.2
gfs
0.5
1.0
0.4
0.8
0.3
0.6
IDSS
0.2
0.4
0.1
0.2
0.0
0.0
0.2
0.4
IG @ ID = 500 mA
1.8
1.4
0.6
10 nA
0.6
0.8
1.0
ID = 100 mA
gfs - Forward Transconductance (µS)
IDSS - Saturation Drain Current (mA)
0.9
Gate Leakage Current
2.0
1 nA
IG - Gate Leakage
1.0
TA = 125_C
IGSS @ 125_C
100 pA
ID = 500 mA
10 pA
ID = 100 mA
TA = 25_C
1 pA
IGSS @ 25_C
0.1 pA
0
0
15
VGS(off) - Gate-Source Cutoff Voltage (V)
VDG - Drain-Gate Voltage (V)
Output Characteristics
400
VGS(off) = -0.7 V
Transfer Characteristics
500
VGS(off) = -0.7 V
VGS = 0 V
360
VDS = 10 V
400
ID - Drain Current (mA)
ID - Drain Current (mA)
30
-0.1 V
240
-0.2 V
160
-0.3 V
80
25_C
200
125_C
100
-0.4 V
-0.5 V
TA = -55_C
300
0
0
0
8
4
12
16
0
20
-0.1
VDS - Drain-Source Voltage (V)
-0.3
-0.4
-0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = -0.7 V
gfs - Forward Transconductance (mS)
-0.2
VGS - Gate-Source Voltage (V)
VDS = 10 V
f = 1 kHz
1.2
TA = -55_C
25_C
0.9
0.6
125_C
0.3
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
VGS - Gate-Source Voltage (V)
Document Number: 70976
S-31623—Rev. E, 01-Sep-03
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3
SST200/200A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Circuit Voltage Gain vs. Drain Current
160
g fs R L
AV + 1 ) R g
L os
120
RL +
Assume VDD = 15 V, VDS = 5 V
10 V
ID
80
VGS(off) = -0.7 V
-1.5 V
40
0
1600
VGS(off) = -0.7 V
1200
800
-1.5 V
400
0
0.01
10
0.1
1
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
Crss - Reverse Feedback Capacitance (pF)
VDS = 0 V
4
10 V
2
0
-4
-8
-12
-16
f = 1 MHz
4
3
VDS = 0 V
2
1
10 V
0
-20
0
VGS - Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
-8
-12
-16
-20
Output Characteristics
300
VGS(off) = -0.7 V
VGS = 0 V
240
16
ID - Drain Current (µA)
Hz
en - Noise Voltage nV /
-4
VGS - Gate-Source Voltage (V)
VDS = 10 V
ID @ 100 mA
12
8
VGS = 0 V
-0.1
180
-0.2
120
4
-0.3
-0.5
60
-0.4
0
0
10
100
1k
f - Frequency (Hz)
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4
1
Common-Source Input Capacitance
vs. Gate-Source Voltage
6
20
0.1
ID - Drain Current (mA)
8
0
0.01
ID - Drain Current (mA)
f = 1 MHz
C iss - Input Capacitance (pF)
On-Resistance vs. Drain Current
2000
rDS(on) - Drain-Source On-Resistance ( Ω )
AV - Voltage Gain
200
10 k
100 k
0
0.1
0.2
0.3
0.4
0.5
VDS - Drain-Source Voltage (V)
Document Number: 70976
S-31623—Rev. E, 01-Sep-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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