LM4250 Programmable Operational Amplifier (Rev. A)
LM4250
LM4250 Programmable Operational Amplifier
Literature Number: SNOSC17A
LM4250
Programmable Operational Amplifier
General Description
Features
The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external
master bias current setting resistor programs the input bias
current, input offset current, quiescent power consumption,
slew rate, input noise, and the gain-bandwidth product. The
device is a truly general purpose operational amplifier.
The LM4250C is identical to the LM4250 except that the
LM4250C has its performance guaranteed over a 0˚C to
+70˚C temperature range instead of the −55˚C to +125˚C
temperature range of the LM4250.
n
n
n
n
n
n
n
n
± 1V to ± 18V power supply operation
3 nA input offset current
Standby power consumption as low as 500 nW
No frequency compensation required
Programmable electrical characteristics
Offset voltage nulling capability
Can be powered by two flashlight batteries
Short circuit protection
Connection Diagrams
Metal Can Package
Dual-In-Line Package
DS009300-5
Top View
DS009300-2
Top View
X5 Difference Amplifier
500 Nano-Watt X10 Amplifier
DS009300-4
DS009300-3
Quiescent PD = 500 nW
Quiescent PD = 0.6 mW
© 2000 National Semiconductor Corporation
DS009300
www.national.com
LM4250 Programmable Operational Amplifier
August 2000
LM4250
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 3)
LM4250
LM4250C
± 18V
± 18V
Operating Temp. Range
−55˚C ≤ TA ≤ +125˚C
0˚C ≤ TA ≤ +70˚C
Differential Input Voltage
± 30V
± 15V
± 30V
± 15V
Supply Voltage
Input Voltage (Note 2)
ISET Current
Output Short Circuit Duration
150 nA
150 nA
Continuous
Continuous
150˚C
100˚C
150˚C
100˚C
TJMAX
H-Package
N-Package
J-Package
100˚C
M-Package
100˚C
Power Dissipation at TA = 25˚C
H-Package (Still Air)
(400 LF/Min Air Flow)
500 mW
300 mW
1200 mW
1200 mW
N-Package
J-Package
500 mW
1000 mW
M-Package
600 mW
350 mW
Thermal Resistance (Typical) θJA
H-Package (Still Air)
(400 LF/Min Air Flow)
165˚C/W
65˚C/W
N-Package
J-Package
165˚C/W
65˚C/W
130˚C/W
108˚C/W
M-Package
108˚C/W
190˚C/W
(Typical) θJC
H-Package
Storage Temperature Range
21˚C/W
21˚C/W
−65˚C to +150˚C
−65˚C to +150˚C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260˚C
Small Outline Package
Vapor Phase (60 seconds)
215˚C
Infrared (15 seconds)
220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
ESD tolerance (Note 4)
800V
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.
Note 2: For supply voltages less than ± 15V, the absolute maximum input
voltage is equal to the supply voltage.
Note 3: Refer to RETS4250X for military specifications.
Note 4: Human body model, 1.5 kΩ in series with 100 pF.
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2
LM4250
Resistor Biasing
Set Current Setting Resistor to V−
ISET
VS
0.1 µA
0.5 µA
1.0 µA
5 µA
10 µA
± 1.5V
± 3.0V
± 6.0V
± 9.0V
± 12.0V
± 15.0V
25.6 MΩ
5.04 MΩ
2.5 MΩ
492 kΩ
244 kΩ
55.6 MΩ
11.0 MΩ
5.5 MΩ
1.09 MΩ
544 kΩ
116 MΩ
23.0 MΩ
11.5 MΩ
2.29 MΩ
1.14 MΩ
176 MΩ
35.0 MΩ
17.5 MΩ
3.49 MΩ
1.74 MΩ
236 MΩ
47.0 MΩ
23.5 MΩ
4.69 MΩ
2.34 MΩ
296 MΩ
59.0 MΩ
29.5 MΩ
5.89 MΩ
2.94 MΩ
Electrical Characteristics
LM4250 (−55˚C ≤ TA ≤ +125˚C unless otherwise specified.) TA = TJ
VS = ± 1.5V
Parameter
ISET = 1 µA
Conditions
Min
ISET = 10 µA
Max
Min
Max
VOS
RS ≤ 100 kΩ, TA = 25˚C
3 mV
5 mV
IOS
TA = 25˚C
3 nA
10 nA
Ibias
TA = 25˚C
7.5 nA
50 nA
Large Signal Voltage
RL = 100 kΩ, TA = 25˚C
Gain
VO = ± 0.6V, RL = 10 kΩ
40k
50k
Supply Current
TA = 25˚C
7.5 µA
80 µA
Power Consumption
TA = 25˚C
23 µW
240 µW
VOS
RS ≤ 100 kΩ
4 mV
6 mV
TA = +125˚C
5 nA
10 nA
TA = −55˚C
3 nA
10 nA
IOS
Ibias
7.5 nA
± 0.6V
Input Voltage Range
Large Signal Voltage Gain
VO = ± 0.5V, RL = 100 kΩ
50 nA
± 0.6V
30k
RL = 10 kΩ
Output Voltage Swing
30k
± 0.6V
RL = 100 kΩ
± 0.6V
RL = 10 kΩ
Common Mode Rejection Ratio
RS ≤ 10 kΩ
70 dB
Supply Voltage Rejection Ratio
RS ≤ 10 kΩ
76 dB
Supply Current
70 dB
76 dB
8 µA
90 µA
VS = ± 15V
Parameter
Conditions
ISET = 1 µA
Min
Max
ISET = 10 µA
Min
Max
VOS
RS ≤ 100 kΩ, TA = 25˚C
3 mV
5 mV
IOS
TA = 25˚C
3 nA
10 nA
Ibias
TA = 25˚C
7.5 nA
50 nA
Large Signal Voltage
RL = 100 kΩ, TA = 25˚C
Gain
VO = ± 10V, RL = 10 kΩ
Supply Current
TA = 25˚C
10 µA
90 µA
Power Consumption
TA = 25˚C
300 µW
2.7 mW
VOS
RS ≤ 100 kΩ
4 mV
6 mV
IOS
TA = +125˚C
25 nA
25 nA
TA = −55˚C
3 nA
10 nA
100k
100k
Ibias
7.5 nA
± 13.5V
Input Voltage Range
3
50 nA
± 13.5V
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LM4250
Electrical Characteristics
(Continued)
VS = ± 15V
Parameter
Conditions
ISET = 1 µA
Min
Large Signal Voltage
VO = ± 10V, RL = 100 kΩ
Gain
RL = 10 kΩ
Output Voltage Swing
RL = 100 kΩ
ISET = 10 µA
Max
Min
Max
50k
50k
± 12V
± 12V
RL = 10 kΩ
Common Mode Rejection Ratio
RS ≤ 10 kΩ
70 dB
Supply Voltage Rejection Ratio
RS ≤ 10 kΩ
76 dB
Supply Current
Power Consumption
70 dB
76 dB
11 µA
100 µA
330 µW
3 mW
Electrical Characteristics
LM4250C (0˚C ≤ TA ≤ +70˚C unless otherwise specified.) TA = TJ
VS = ± 1.5V
Parameter
ISET = 1 µA
Conditions
Min
ISET = 10 µA
Max
Min
Max
VOS
RS ≤ 100 kΩ, TA = 25˚C
5 mV
6 mV
IOS
TA = 25˚C
6 nA
20 nA
Ibias
TA = 25˚C
10 nA
75 nA
Large Signal Voltage Gain
RL = 100 kΩ, TA = 25˚C
25k
VO = ± 0.6V, RL = 10 kΩ
Supply Current
25k
TA = 25˚C
8 µA
90 µA
Power Consumption
TA = 25˚C
24 µW
270 µW
VOS
RS ≤ 10 kΩ
6.5 mV
7.5 mV
IOS
8 nA
25 nA
Ibias
10 nA
80 nA
± 0.6V
Input Voltage Range
Large Signal Voltage
VO = ± 0.5V, RL = 100 kΩ
Gain
RL = 10 kΩ
Output Voltage Swing
± 0.6V
25k
25k
± 0.6V
RL = 100 kΩ
± 0.6V
RL = 10 kΩ
Common Mode Rejection Ratio
RS ≤ 10 kΩ
70 dB
70 dB
Supply Voltage Rejection Ratio
RS ≤ 10 kΩ
74 dB
74 dB
Supply Current
Power Consumption
8 µA
90 µA
24 µW
270 µW
VS = ± 15V
Parameter
Conditions
ISET = 1 µA
Min
VOS
RS ≤ 100 kΩ, TA = 25˚C
Max
ISET = 10 µA
Min
Max
5 mV
6 mV
IOS
TA = 25˚C
6 nA
20 nA
Ibias
TA = 25˚C
10 nA
75 nA
Large Signal Voltage
RL = 100 kΩ, TA = 25˚C
Gain
VO = ± 10V, RL = 10 kΩ
Supply Current
TA = 25˚C
11 µA
Power Consumption
TA = 25˚C
330 µW
3 mW
VOS
RS ≤ 100 kΩ
6.5 mV
7.5 mV
IOS
8 nA
25 nA
Ibias
10 nA
80 nA
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4
60k
60k
100 µA
LM4250
Electrical Characteristics
(Continued)
VS = ± 15V
Parameter
Conditions
ISET = 1 µA
Min
Max
± 13.5V
Input Voltage Range
Large Signal Voltage
VO = ± 10V, RL = 100 kΩ
Gain
RL = 10 kΩ
Output Voltage Swing
RL = 100 kΩ
ISET = 10 µA
Min
Max
± 13.5V
50k
50k
± 12V
± 12V
RL = 10 kΩ
Common Mode Rejection Ratio
RS ≤ 10 kΩ
70 dB
Supply Voltage Rejection Ratio
RS ≤ 10 kΩ
74 dB
Supply Current
Power Consumption
70 dB
74 dB
11 µA
100 µA
330 µW
3 mW
Typical Performance Characteristics
Input Bias Current vs ISET
Input Bias Current vs
Temperature
Input Offset Current vs
Temperature
DS009300-15
DS009300-16
Unnulled Input Offset Voltage
Change vs ISET
Unnulled Input Offset Voltage
Change vs Temperature
DS009300-18
DS009300-17
Peak to Peak Output Voltage
Swing vs Load Resistance
DS009300-20
DS009300-19
5
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LM4250
Typical Performance Characteristics
Peak to Peak Output Voltage
Swing vs Supply Voltage
(Continued)
Quiescent Current (Iq) vs
Temperature
Quiescent Current (Iq) vs ISET
DS009300-23
DS009300-21
Slew Rate vs ISET
DS009300-22
Gain Bandwidth Product
vs ISET
Open Loop Voltage Gain
vs ISET
DS009300-24
DS009300-25
Phase Margin vs ISET
Input Noise Current (In) and
Voltage (En) vs Frequency
RSET vs ISET
DS009300-27
DS009300-29
DS009300-28
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DS009300-26
6
LM4250
Typical Applications
X5 Difference Amplifier
500 Nano-Watt X10 Amplifier
DS009300-4
DS009300-3
Quiescent PD = 0.6 mW
Quiescent PD = 500 nW
Floating Input Meter Amplifier
100 nA full Scale
DS009300-8
Quiescent PD = 1.8 µW
*Meter movement (0–100 µA, 2 kΩ) marked for 0–100 nA full scale.
7
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LM4250
Typical Applications
(Continued)
X100 Instrumentation Amplifier 10 µW
DS009300-9
Note 5: Quiescent PD = 10 µW.
Note 6: R2, R3, R4, R5, R6 and R7 are 1% resistors.
Note 7: R11 and C1 are for DC and AC common mode rejection adjustments.
RSET Connected to V−
RSET Connected to Ground
DS009300-30
DS009300-11
DS009300-10
Transistor Current Sourcing
Biasing
FET Current Sourcing Biasing
DS009300-13
DS009300-12
*R1 limits ISET maximum
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8
Offset Null Circuit
DS009300-14
LM4250
Schematic Diagram
DS009300-1
Ordering Information
Temperature Range
Military
Commercial
−55˚C ≤ TA ≤ +125˚C
0˚C ≤ TA ≤ +70˚C
LM4250CN
Package
NSC
Package
Number
8-Pin
N08E
Molded DIP
LM4250CM
8-Pin
LM4250CMX
Surface Mount
M08A
8-Pin
LM4250J-MIL
J08E
Ceramic DIP
LM4250CH
8-Pin
H08C
Metal Can
9
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LM4250
Physical Dimensions
inches (millimeters) unless otherwise noted
Metal Can Package (H)
Order Number LM4250CH
NS Package Number H08C
Ceramic Dual-In-Line Package (J)
Order Number LM4250J-MIL
NS Package Number J08A
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10
LM4250
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Small Outline Package (M)
Order Number LM4250CM or LM4250CMX
NS Package Number M08A
Molded Dual-In-Line Package (N)
Order Number LM4250CN
NS Package Number N08E
11
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LM4250 Programmable Operational Amplifier
Notes
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