Cree, CMPA1D1E030D 30W,13.5-14.5GHz GaN HEMT MMIC for Ku

Cree, CMPA1D1E030D 30W,13.5-14.5GHz GaN HEMT MMIC for Ku
PRELIMINARY
CMPA1D1E025F
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit
(MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication
process. The Ku Band 25W MMIC is targeted for commercial Ku Band
applications.
It offers high gain and superior efficiency while meets OQPSK
linearity required for Satcom applications at 3dB backed off Psat operations.
This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic
PN: CMPA1D
1E025F
Package Type
:440208
flanged package.
Typical Performance Over 13.75-14.5 GHz (TC = 25˚C)
Parameter
13.75 GHz
14.0 GHz
Small Signal Gain
24
24.5
Linear Output Power
24
Power Gain
Power Added Efficiency
14.25 GHz
14.5 GHz
Units
24.5
24
dB
23
21
20
W
21
21
20
20
dB
22
20
18
18
%
Note1: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha
Filter = 0.2.
Features
Applications
• Satellite Communications Uplink
• 24 dB Small Signal Gain
• 40 W Typical Pulsed PSAT
• Operation up to 40 V
• 20 W linear power under OQPSK
2015
Rev 1.0 – June
• Class A/B high gain, high efficiency 50 ohm MMIC Ku
Band high power amplifier
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Symbol
Rating
Units
Drain-source Voltage
Parameter
VDSS
84
VDC
25˚C
Conditions
Gate-source Voltage
VGS
-10, +2
VDC
25˚C
Power Dissipation
PDISS
94
W
Storage Temperature
TSTG
-55, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
10
mA
Soldering Temperature1
TS
245
˚C
Screw Torque
τ
40
in-oz
RθJC
1.5
˚C/W
PDISS = 94 W, 85˚C
TC
-40, +85
˚C
CW, PDISS = 94 W
Thermal Resistance, Junction to Case
Case Operating Temperature
25˚C
Note:
1
Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 18.2 mA
VQ
–
-2.7
–
V
VDS = 40 V, ID = 240 mA
Saturated Drain Current
IDS
14.6
16.4
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
84
100
–
V
VGS = -8 V, ID = 18.2 mA
Small Signal Gain
S21
–
24
–
dB
VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
Input Return Loss
S11
–
-7
–
dB
VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
Output Return Loss
S22
–
-7
–
dB
VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
VSWR
–
–
5:1
Y
No damage at all phase angles, VDD = 40 V, IDQ = 240 mA,
POUT = 41 dBm OQPSK
DC Characteristics1
Gate Threshold
Gate Quiscent Voltage
2
RF Characteristics3
Output Mismatch Stress
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in the CMPA1D1E025F-AMP
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Electrical Characteristics Continued... (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Power Added Efficiency
PAE1
–
18.6
–
%
Power Added Efficiency
PAE2
–
16.4
–
%
Power Gain
GP1
–
23.3
–
dB
Power Gain
GP2
–
22.1
–
dB
OQPSK Linearity
ACLR1
–
-40
–
dBc
OQPSK Linearity
ACLR2
–
-38
–
dBc
Conditions
RF Characteristics1,2,3,4
VDD = 40 V, IDQ = 240 mA,
Frequency = 13.75 GHz
VDD = 40 V, IDQ = 240 mA,
Frequency = 14.5 GHz
VDD = 40 V, IDQ = 240 mA,
Frequency = 13.75 GHz
VDD = 40 V, IDQ = 240 mA,
Frequency = 14.5 GHz
VDD = 40 V, IDQ = 240 mA,
Frequency = 13.75 GHz
VDD = 40 V, IDQ = 240 mA,
Frequency = 14.5 GHz
Notes:
1
Measured in the CMPA1D1E025F-AMP
2
Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2.
3
Measured at PAVE = 41 dBm.
4
Fixture loss de-embedded.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Figure 1. - Small Signal S-parameters
Small Signal S-parameters
CMPA1D1E025F
in Test Fixture
CMPA1D1E025F in Test Fixture
VDD =VDD
40V,
I
=
240
mA,
Tcase = 25°C
= 40DQV, IDQ = 240 mA, Tcase = 25°C
25
S21
S11
20
S22
Gain, Return Loss (dB)
15
10
5
0
-5
-10
-15
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Figure 2. - Modulated
Spectral
Regrowth
= -30dBc,
MHz
from Carrier
Modulated @@
Spectral
Regrowth
= -30dBc,
1.6 MHz1.6
from
Carrier
Msps
OQPSK Modulation
Modulation
1.61.6
Msps
OQPSK
= 40 V, IDQ = 240 mA, Tcase = 25°C
VDDVDD
= 40
V, IDQ = 240 mA, Tcase = 25°C
44
30
VDDOutput
= 40V,Power
IDQ = 240 mA, Tcase = 25°C
43
28
Pout
42
26
41
24
PAE
40
22
Gain
39
20
38
18
PAE
37
16
36
14
35
12
34
13.0
13.2
13.4
13.6
13.8
14.0
14.2
14.4
14.6
14.8
15.0
Gain (dB), PAE (%)
Output Power (dBm)
Gain
10
15.2
Frequency (GHz)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Mask @Mask
Average
Power
= 41dBm
Figure Spectral
3. - Spectral
@ Output
Average
Output
Power = 41dBm
1.6
OQPSK
Modulation
1.6Msps
Msps
OQPSK
Modulation
Vdd = 40 V, Idq = 240 mA, Tcase = 25°C
VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
0
Spectral Regrowth (dBc)
-5
-10
13.75 GHz
-15
14 GHz
-20
14.25 GHz
-25
14.5 GHz
-30
-35
-40
-45
-50
-55
-60
-65
-70
-6
-5
-4
-3
-2
-1
0
1
Frequency Offset (MHz)
2
3
4
5
6
Modulated Power Sweep
Figure 4. - CMPA1D1E025F
1.6 Msps OQPSK Modulated
Modulation Power Sweep
Vdd1.6
= 40Msps
V, Idq OQPSK
= 240 mA,Modulation
Tcase = 25°C
VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
27.5
0
Gain
-5
22.5
-10
Gain (dB), PAE (%)
20.0
17.5
15.0
Gain 13.75 GHz
Gain 14 GHz
Gain 14.25 GHz
Gain 14.5 GHz
PAE 13.75 GHz
PAE 14 GHz
PAE 14.25 GHz
PAE 14.5 GHz
SR 13.75 GHz
SR 14 GHz
SR 14.25 GHz
SR 14.5 GHz
-15
-20
PAE
-25
12.5
-30
10.0
-35
SR
7.5
-40
5.0
-45
2.5
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Spectral Regrowth @ 1.6MHz Offset (dBc)
25.0
-50
Average Output Power (dBm)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Figure 5. - Modulated Power Sweep
Power Sweep
1.6Modulated
Msps OQPSK
Modulation
1.6 Msps OQPSK Modulation
VVDD
=
40
V,
I
=
240
mA,
Tcase = 25°C
DD = 40 V, IDQ
DQ = 240 mA, Tcase = 25°C
180
160
Part would exceed recommended maximum 225 degC channel
temperature at 85 degC case temp, if operated in this region
140
Trise (degC)
120
100
Trise 13.75 GHz
Trise 14 GHz
80
Trise 14.25 GHz
60
Trise 14.5 GHz
40
20
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Average Output Power (dBm)
Modulated Power
Sweep Power Sweep
Figure 6. - CMPA1D1E025F
Modulated
MspsOQPSK
OQPSK Modulation
Modulation
1.61.6
Msps
VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
3.4
3.2
13.75 GHz
Drain Current (A)
3
2.8
14 GHz
2.6
14.25 GHz
2.4
14.5 GHz
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Average Output Power (dBm)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
6
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Figure 7. - CMPA1D1E025F
Two Tone Power Sweep
Two Tone Power Sweep
IMD3
@
1
MHz
Carrier
IMD3 @ 1 MHz Carrier Spacing
Spacing
VDDVDD
= 40
V, V,
IDQIDQ
= 240
mA,
Tcase
= 40
= 240
mA,
Tcase==25°C
25°C
-15
13.75 GHz
Third Order Intermodulation (dBc)
-20
14 GHz
14.25 GHz
-25
14.5 GHz
-30
-35
-40
-45
-50
-55
24
26
28
30
32
34
36
38
40
42
44
Pout (dBm)
Two Tone Power Sweep
Figure 8. -Two Tone Power Sweep
IMD @ 1 MHz Carrier Spacing, 14 GHz
IMD
1 MHz
Spacing,
GHz
VDD @
= 40
V, IDQCarrier
= 240 mA,
Tcase 14
= 25°C
VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
-15
IMD3
-20
IMD5
-25
IMD7
IMD (dBc)
-30
-35
-40
-45
-50
-55
24
26
28
30
32
34
36
38
40
42
44
Pout (dBm)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
7
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Two Tone Carrier Spacing Sweep
38dBm
AverageSweep
Ouput @
Power,
14 GHz
Figure 9. - Two Tone @
Carrier
Spacing
38dBm
Average Ouput Power, 14 GHz
Vdd
= 40
V, Idq
=1
Tcase
= 25°C
VDD
= 40
V, IDQ
= A,
1 A,
Tcase
= 25°C
0
-IMD3
+IMD3
-10
-IMD5
+IMD5
IMD (dBc)
-20
-IMD7
+IMD7
-30
-40
-50
-60
-70
0.10
1.00
10.00
100.00
Carrier Spacing (MHz)
CW vs. Frequency @ PIN = 23 dBm
VDD
= 40
V, IDQ
= 240 mA, Tcase
Figure 10.
- CW
vs. Frequency
@ PIN == 25°C
23 dBm
VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
30
44
28
43
26
42
24
41
22
40
20
39
18
38
14
Gain
PAE
36
35
13.0
16
Pout
37
13.2
13.4
13.6
13.8
14.0
14.2
14.4
14.6
14.8
15.0
Gain (dB), PAE (%)
Output Power (dBm)
45
12
15.2
10
15.4
Frequency (GHz)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
8
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Figure 11.
CW Power
CW-Power
SweepSweep
CMPA1D1E025F
in
CMPA1D1E025F inTest
Test Fixture
Fixture
= 40V,
= 240
mA,Tcase
Tcase==25°C
25°C
VDDVDD
= 40V,
IDQIDQ
= 240
mA,
27.5
25
22.5
Gain 13.75 GHz
Gain 14 GHz
Gain (dB), PAE (%)
20
Gain 14.25 GHz
Gain 14.5 GHz
17.5
PAE 13.75 GHz
PAE 14 GHz
15
PAE 14.25 GHz
PAE 14.5 GHz
12.5
10
7.5
5
2.5
28
30
32
34
36
38
40
42
44
Pout (dBm)
Pulsed vs. Frequency @ PIN = 23 dBm
in Test Fixture
Figure 12. CMPA1D1E025F
- Pulsed vs. Frequency
@ PIN = 23 dBm
100 uS pulse width, 10% duty cycle
CMPA1D1E025F in Test Fixture
Vdd = 40 V, Idq = 240 mA, Tcase = 25°C
47
34
46
32
45
30
44
28
43
26
42
24
41
22
40
Gain
18
PAE
38
37
13.00
20
Pout
39
13.20
13.40
13.60
13.80
14.00
14.20
14.40
14.60
14.80
15.00
Gain (dB), PAE (%)
Output Power (dBm)
100 uS pulse width, 10% duty cycle VDD = 40 V, IDQ = 240 mA, Tcase = 25°C
16
15.20
14
15.40
Frequency (GHz)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
9
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Figure 13. - Pulsed Power Sweep
Pulsed Power
Sweep
CMPA1D1E025F
in Test
Fixture
CMPA1D1E025F
Test Fixture
10%
Duty, 100 uSinPulse
Width
10% Duty,
Pulse
Width
VDD = 40V,
IDQ = 100
240 uS
mA,
Tcase
= 25°C
VDD = 40V, IDQ = 240 mA, Tcase = 25°C
30
27.5
25
Gain (dB), PAE (%)
22.5
PAE 13.75 GHz
20
PAE 14 GHz
PAE 14.25 GHz
17.5
PAE 14.5 GHz
15
Gain 13.75 GHz
12.5
Gain 14.25 GHz
Gain 14 GHz
Gain 14.5 GHz
10
7.5
5
2.5
30
32
34
36
38
40
42
44
46
Pout (dBm)
VDD =
Figure 14. -AM-AM
AM-AM
Vdd
Idq =
240Tcase
mA, Tcase
= 25°C
40 V,=I 40=V,240
mA,
= 25°C
DQ
26
25
24
S21 Magnitude (dB)
23
22
21
20
19
18
13.75 GHz
17
14 GHz
16
14.25 GHz
15
14.5 GHz
14
22
24
26
28
30
32
34
36
38
40
42
44
Output Power (dBm)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
10
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Typical Performance
Figure 15.
- AM-PM
AM-PM
VDDVdd
= 40= V,
=
240
mA,
Tcase
= =25°C
40IV,
Idq
=
240
mA,
Tcase
25°C
DQ
12
10
8
S21 Phase (Degrees)
6
4
2
0
-2
13.75 GHz
14 GHz
-4
14.25 GHz
14.5 GHz
-6
-8
22
24
26
28
30
32
34
36
38
40
42
225
250
44
Output Power (dBm)
CMPA1D1E025F Power Dissipation De-rating Curve
Power Dissipation De-rating Curve
100
Power Dissipation (W)
80
60
Note 1
40
20
0
0
25
50
75
100
125
150
175
200
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
CMPA1D1E025F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
C5
Description
Qty
CAP ELECT 100UF 80V AFK SMD
1
C1,C2
CAP, 33000PF, 0805,100V, X7R
2
C3,C4
CAP, 2.2UF, 100V, 10%, X7R, 1210
4
J1,J2
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,
BLUNT POST, 20MIL
2
J4
CONN, SMB, STRAIGHT JACK RECEPTACLE, SMT, 50
OHM, Au PLATED
1
J3
HEADER RT>PLZ .1CEN LK 9POS
1
W1
WIRE, BLACK, 22 AWG ~ 1.50”
1
W2
WIRE, BLACK, 22 AWG ~ 1.75”
1
W3
WIRE, BLACK, 22 AWG ~ 2.0”
1
PCB, TEST FIXTURE, TACONICS RF35P, 20 MILS,
440208 PKG
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CMPA1D1E025F
1
Q1
CMPA1D1E025F-AMP Demonstration Amplifier Circuit
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
12
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
CMPA1D1E025F-AMP Demonstration Amplifier Circuit Schematic
CMPA1D1E025F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
13
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Product Dimensions CMPA1D1E025F (Package Type —
­ 440208)
Pin Number
Qty
1
Gate Bias
2
NC
3
RF In
4
NC
5
Gate Bias
6
Drain Bias
7
Drain Bias
8
RF Out
9
Drain Bias
10
Drain Bias
11
Source
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
14
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Part Number System
CMPA1D1E025F
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
13.75
GHz
Upper Frequency1
14.5
GHz
25
W
Flange
-
Power Output
Package
Table 1.
Note : Alpha characters used in frequency code
1
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
15
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Product Ordering Information
Order Number
Description
Unit of Measure
CMPA1D1E025F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CMPA1D1E025F-TB
CMPA1D1E025F-AMP
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
16
CMPA1D1E025F Rev 1.0, Preliminary
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
17
CMPA1D1E025F Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
CMPA1D1E025F-TB
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