MF302-13
S1F70000 Series
Technical Manual
IEEE1394
POWER
SUPPLY
Controller
IC
S1R77801F00A
S1F70000
Series
Technical Manual
S1F70000 Series Technical Manual
ELECTRONIC DEVICES MARKETING DIVISION
EPSON Electronic Devices Website
http://www.epson.co.jp/device/
This manual was made with recycle paper,
and printed using soy-based inks.
First issue November,1990 U
Revised July,2001 in Japan H B
4.5mm
In pursuit of “Saving” Technology, Epson electronic devices.
Our lineup of semiconductors, liquid crystal displays and quartz devices
assists in creating the products of our customers’ dreams.
Epson IS energy savings.
NOTICE
No part of this material may be reproduced or duplicated in any from or by any means without the
written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material
without notics. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies
contained in this material or due to its application or use in any product or circuit and, further, there
is no repersesnation that this material is applicable to products requiring high level reliability, such as,
medical products. Moreover, no license to any intellectual property rights is granted by implication or
otherwise, and there is no representation or warranty that anything made in accordance with this
material will be free from any patent or copyright infringement of a third party. This material or
portions thereof may contain technology or the subject relating to strategic products under the control
of the Foreign Exchange and Foreign Trade Low of Japan and may require an export licenes from the
Ministry of International Trade and Industry or other approval from another government agency.
HD44103 is a registered trademark of Hitachi, Ltd.
All other product names mentioned herein are trademarks and/or registered trademarks of their
respective companies.
©SEIKO EPSON CORPORATION 2002, All rights reserved.
4.5mm
The information of the product number change
Starting April 1, 2001 the product number has been changed as listed below. To order, please use
the new product number. For further information, please contact Epson sales representative.
Configuration of product number
●DEVICES (Example : S1F70000D00B100)
S1
F
70000
D
00B1
00
Packing specification
Specifications
Shape (C:DIP, D:Bare chip, M:SOP, Y:SOT89)
Model number
Model name (F:Power supply ICs)
Product classification (S1:Semiconductors)
Comparison table between new and previous number
Previous number
SCI7660M0B
SCI7660C0B
SCI7662M0A
SCI7662D0A
SCI7661M0B
SCI7661MBB
SCI7661C0B
SCI7654M0A
SCI7654C0A
SCI7664M0A
SCI7664D0A
SCI7810Y *B
SCI7910Y *A
SCI7631MLA
SCI7631MBA
SCI7631MKA
SCI7631MAA
SCI7638MHA
SCI7638MLA
SCI7633MBA
SCI7110M0A
SCI7120M0A
SCI7120M0B
New number
S1F76600M0B0
S1F76600C0B0
S1F76620M0A0
S1F76620D0A0
S1F76610M0B0
S1F76610M2B0
S1F76610C0B0
S1F76540M0A0
S1F76540C0A0
S1F76640M0A0
S1F76640D0A0
S1F78100Y2*0
S1F79100Y1*0
S1F76310M1L0
S1F76310M1B0
S1F76310M1K0
S1F76310M1A0
S1F76380M1H0
S1F76380M1L0
S1F76330M1B0
S1F71100M0A0
S1F71200M0A0
S1F71200M0B0
Previous number
SCI7721Y*A
SCI7721Y*B
SCI7720Y*A
SCI7722YDB
New number
S1F77210Y1*0
S1F77210Y2*0
S1F77200Y1*0
S1F77220Y2D0
S1F70000 Series
Technical Manual
Contents
Introduction .......................................................................................................................................................................... 1
Selection Guide .................................................................................................................................................................... 2
1. DC/DC Converter
S1F76600 Series
DESCRIPTION .......................................................................................................................................................... 1–1
FEATURES ............................................................................................................................................................... 1–1
APPLICATIONS ........................................................................................................................................................ 1–1
BLOCK DIAGRAM .................................................................................................................................................... 1–1
PIN ASSIGNMENTS ................................................................................................................................................. 1–1
PIN DESCRIPTIONS ................................................................................................................................................ 1–1
SPECIFICATIONS .................................................................................................................................................... 1–2
FUNCTIONAL DESCRIPTIONS ............................................................................................................................... 1–7
TYPICAL APPLICATIONS ........................................................................................................................................ 1–8
S1F76620 Series
DESCRIPTION ........................................................................................................................................................ 1–10
FEATURES ............................................................................................................................................................. 1–10
BLOCK DIAGRAM .................................................................................................................................................. 1–10
PIN DESCRIPTIONS .............................................................................................................................................. 1–11
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 1–13
ELECTRICAL CHARACTERISTICS ....................................................................................................................... 1–14
EXAMPLE OF REFERENCE EXTERNAL CONNECTION ..................................................................................... 1–21
MEASUREMENT CIRCUIT ..................................................................................................................................... 1–24
MECHANICAL DATA .............................................................................................................................................. 1–25
2. DC/DC Converter & Voltage Regulator
S1F76610 Series
DESCRIPTION .......................................................................................................................................................... 2–1
FEATURES ............................................................................................................................................................... 2–1
APPLICATIONS ........................................................................................................................................................ 2–1
BLOCK DIAGRAM .................................................................................................................................................... 2–1
PIN ASSIGNMENTS ................................................................................................................................................. 2–2
PIN DESCRIPTIONS ................................................................................................................................................ 2–2
SPECIFICATIONS .................................................................................................................................................... 2–3
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 2–11
TYPICAL APPLICATIONS ...................................................................................................................................... 2–12
S1F70000 Series
Technical Manual
EPSON
i
Contents
S1F76540 Series
DESCRIPTION ........................................................................................................................................................ 2–15
FEATURES ............................................................................................................................................................. 2–15
APPLICATIONS ...................................................................................................................................................... 2–15
BLOCK DIAGRAM .................................................................................................................................................. 2–16
PIN DESCRIPTIONS .............................................................................................................................................. 2–16
ELECTRICAL CHARACTERISTICS ....................................................................................................................... 2–19
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 2–22
CHARACTERISTICS GRAPH ................................................................................................................................ 2–29
APPLICATION CIRCUIT EXAMPLES .................................................................................................................... 2–30
S1F76640 Series
DESCRIPTION ........................................................................................................................................................ 2–38
FEATURES ............................................................................................................................................................. 2–38
BLOCK DIAGRAM .................................................................................................................................................. 2–39
PIN ASSIGNMENTS ............................................................................................................................................... 2–40
PIN DESCRIPTIONS .............................................................................................................................................. 2–41
CHIP EXTERNAL SHAPE AND PAD CENTER COORDINATES .......................................................................... 2–42
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 2–43
ELECTRICAL CHARACTERISTICS ....................................................................................................................... 2–46
CHARACTERISTICS GRAPH ................................................................................................................................ 2–51
MECHANICAL DATA .............................................................................................................................................. 2–56
APPLICATION EXAMPLE ...................................................................................................................................... 2–57
3. Voltage Regulator
S1F78100Y Series
DESCRIPTION .......................................................................................................................................................... 3–1
FEATURES ............................................................................................................................................................... 3–1
BLOCK DIAGRAM .................................................................................................................................................... 3–1
PIN DESCRIPTIONS ................................................................................................................................................ 3–2
PIN ASSIGNMENTS ................................................................................................................................................. 3–2
FUNCTIONAL DESCRIPTIONS ............................................................................................................................... 3–3
LINEUP ..................................................................................................................................................................... 3–4
ABSOLUTE MAXIMUM RATINGS ............................................................................................................................ 3–5
RECOMMENDED OPERATING CONDITIONS ....................................................................................................... 3–5
ELECTRICAL CHARACTERISTICS ......................................................................................................................... 3–6
EXAMPLES OF REFERENCE EXTERNAL CONNECTION .................................................................................. 3–14
MECHANICAL DATA .............................................................................................................................................. 3–14
ii
EPSON
S1F70000 Series
Technical Manual
Contents
CHARACTERISTICS GRAPH ................................................................................................................................ 3–15
S1F79100Y Series
DESCRIPTION ........................................................................................................................................................ 3–21
FEATURES ............................................................................................................................................................. 3–21
APPLICATIONS ...................................................................................................................................................... 3–21
LINEUP ................................................................................................................................................................... 3–21
BLOCK DIAGRAM .................................................................................................................................................. 3–21
PIN ASSIGNMENTS ............................................................................................................................................... 3–21
PIN DESCRIPTIONS .............................................................................................................................................. 3–22
SPECIFICATIONS .................................................................................................................................................. 3–22
PACKAGE MARKINGS ........................................................................................................................................... 3–35
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 3–35
TYPICAL APPLICATIONS ...................................................................................................................................... 3–36
4. DC/DC Switching Regulators
S1F76300 Series
S1F76310, S1F76380 Series
DESCRIPTION ................................................................................................................................................ 4–1
FEATURES ..................................................................................................................................................... 4–1
APPLICATIONS .............................................................................................................................................. 4–1
LINEUP ............................................................................................................................................................ 4–1
BLOCK DIAGRAMS ........................................................................................................................................ 4–2
PIN ASSIGNMENTS ....................................................................................................................................... 4–3
PIN DESCRIPTIONS ....................................................................................................................................... 4–3
SPECIFICATIONS ........................................................................................................................................... 4–4
PACKAGE MARKINGS ................................................................................................................................. 4–13
FUNCTIONAL DESCRIPTIONS .................................................................................................................... 4–13
TYPICAL APPLICATIONS ............................................................................................................................ 4–15
S1F76330 Series
DESCRIPTION .............................................................................................................................................. 4–22
FEATURES ................................................................................................................................................... 4–22
APPLICATIONS ............................................................................................................................................ 4–22
LINEUP .......................................................................................................................................................... 4–22
BLOCK DIAGRAMS ...................................................................................................................................... 4–23
PIN ASSIGNMENTS ..................................................................................................................................... 4–23
PIN DESCRIPTIONS ..................................................................................................................................... 4–23
SPECIFICATIONS ......................................................................................................................................... 4–24
S1F70000 Series
Technical Manual
EPSON
iii
Contents
PACKAGE MARKINGS ................................................................................................................................. 4–26
FUNCTIONAL DESCRIPTIONS .................................................................................................................... 4–27
TYPICAL APPLICATIONS ............................................................................................................................ 4–28
S1F71100 Series
DESCRIPTION ........................................................................................................................................................ 4–34
FEATURES ............................................................................................................................................................. 4–34
BLOCK DIAGRAM .................................................................................................................................................. 4–34
PIN ASSIGNMENTS ............................................................................................................................................... 4–35
PIN DESCRIPTIONS .............................................................................................................................................. 4–35
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 4–36
ABSOLUTE MAXIMUM RATINGS .......................................................................................................................... 4–37
ELECTRICAL CHARACTERISTICS ....................................................................................................................... 4–38
EXAMPLE OF EXTERNAL CONNECTION OF REFERENCE CIRCUIT ............................................................... 4–39
MECHANICAL DATA .............................................................................................................................................. 4–40
S1F71200 Series
DESCRIPTION ........................................................................................................................................................ 4–41
FEATURES ............................................................................................................................................................. 4–41
BLOCK DIAGRAM .................................................................................................................................................. 4–42
PIN ASSIGNMENTS ............................................................................................................................................... 4–43
PIN DESCRIPTIONS .............................................................................................................................................. 4–44
FUNCTIONAL DESCRIPTIONS ............................................................................................................................. 4–45
ABSOLUTE MAXIMUM RATINGS .......................................................................................................................... 4–47
ELECTRICAL CHARACTERISTICS ....................................................................................................................... 4–48
EXAMPLE OF EXTERNAL CONNECTION OF REFERENCE CIRCUIT ............................................................... 4–52
MECHANICAL DATA .............................................................................................................................................. 4–54
iv
EPSON
S1F70000 Series
Technical Manual
Contents
5 . Voltage Detector
S1F77200Y Series
DESCRIPTION .......................................................................................................................................................... 5 –1
FEATURES ............................................................................................................................................................... 5 –1
LINEUP ..................................................................................................................................................................... 5 –2
BLOCK DIAGRAM .................................................................................................................................................... 5 –3
PIN DESCRIPTIONS ................................................................................................................................................ 5–4
FUNCTIONAL DESCRIPTIONS ............................................................................................................................... 5 –4
ABSOLUTE MAXIMUM RATINGS ............................................................................................................................ 5 –5
ELECTRIC CHARACTERISTICS ............................................................................................................................. 5–6
EXAMPLES OF EXTERNAL CONNECTION .......................................................................................................... 5 –19
SAMPLE CIRCUITS (S1F77210Y Series) .............................................................................................................. 5–20
SAMPLE CIRCUITS (S1F77200Y Series) .............................................................................................................. 5–21
PRECAUTIONS ...................................................................................................................................................... 5–22
6 . Appendix
ABSOLUTE MAXIMUM RATINGS ............................................................................................................................ 6–1
RECOMMENDER OPERATING CONDITIONS ....................................................................................................... 6 –1
ELECTRICAL CHARACTERISTICS ......................................................................................................................... 6–1
POWER DISSIPATION CONDITIONS ..................................................................................................................... 6 –1
PARAMETER SUMMARY ........................................................................................................................................ 6 –2
MECHANICAL DATA ................................................................................................................................................ 6–4
EMBOSS CARRIER TAPING STANDARD (SOT89-3pin)
TAPING INFORMATION ........................................................................................................................................... 6 –6
REEL SPECIFICATIONS .......................................................................................................................................... 6–7
DEVICE POSITIONING ............................................................................................................................................ 6–7
EMBOSS CARRIER TAPING STANDARD (SOP3-8pin)
TAPING INFORMATION ........................................................................................................................................... 6 –8
REEL SPECIFICATIONS .......................................................................................................................................... 6 –9
DEVICE POSITIONING ............................................................................................................................................ 6 –9
EMBOSS CARRIER TAPING STANDARD (SOP5-14pin)
TAPING INFORMATION ......................................................................................................................................... 6 –11
REEL SPECIFICATIONS ........................................................................................................................................ 6 –12
DEVICE POSITIONING .......................................................................................................................................... 6 –12
S1F70000 Series
Technical Manual
EPSON
v
Contents
EMBOSS CARRIER TAPING STANDARD (SOP2-24pin)
TAPING INFORMATION ......................................................................................................................................... 6 –14
REEL SPECIFICATIONS ........................................................................................................................................ 6 –16
DEVICE POSITIONING .......................................................................................................................................... 6 –16
vi
EPSON
S1F70000 Series
Technical Manual
Introduction
This book describes SEIKO EPSON's full lineup of
power supply ICs and includes a complete set of
product specifications. Also included are sections on
quality assurance and packaging.
We suggest that you use the selector guide beginning
on the following page to choose the IC or IC series that
most closely matches your application. Then you can
S1F70000 Series
Technical Manual
use the detailed product descriptions in subsequent
sections to confirm device specifications and characteristics.
Please contact your local SEIKO EPSON sales
representative for further information or assistance on
these or other products.
EPSON
1
Selection Guide
DC/DC Converter
Product
S1F76600M0B0
S1F76600C0B0
S1F76620M0A0
Features
•
•
•
•
Supply voltage conversion IC.
It effectively converts input voltage VDD into –VDD or 2VDD
Output current : Max. 30mA at –5V
Power conversion efficiency: Typ. 95%
•
•
•
•
Supply voltage conversion IC.
It effectively converts input voltage VDD into –VDD or 2VDD
Output current : Max. 30mA at 5V
Power conversion efficiency: Typ. 95%
Package
SOP4-8pin
DIP-8pin
SOP4-8pin
DC/DC Converter and Voltage Regulator
Product
S1F76610M0B0
S1F76610M2B0
S1F76610C0B0
S1F76540M0A0
S1F76540C0A0
S1F76640M0A0
Features
•
•
•
•
•
On–chip voltage regulator.
It effectively converts input voltage VDD into –VDD/–2VDD or 2VDD/3VDD
Output current : Max. 20mA at –5V
Power conversion efficiency: Typ. 95%
Three temperature gradients for LCD panel power.
•
•
•
•
•
On–chip voltage regulator.
It effectively converts input voltage VDD into –2VDD/–3VDD/–4VDD.
Low current Consumption : Typ. 130µA at –5V, 4–time boosting
Power conversion efficiency: Typ. 95%
Three temperature gradients for LCD panel power.
•
•
•
•
•
On–chip voltage regulator.
It effectively converts input voltage VDD into 2VDD/3VDD/4VDD.
Output current : Max. 20mA at 5V
Power conversion efficiency: Typ. 95%
Three temperature gradients for LCD panel power.
Package
SOP5-14pin
SSOP2-16pin
DIP-14pin
SSOP2-16pin
DIP-16pin
SSOP2-16pin
Voltage regulator
Product
2
Features
Package
S1F78100Y2A0
• 6.00V positive output voltage regulator.
• Low operating current (Typ. 3.0µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2B0
• 5.00V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2M0
• 4.50V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2P0
• 4.00V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2K0
• 3.90V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2N0
• 3.50V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2T0
• 3.30V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2C0
• 3.20V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
EPSON
S1F70000 Series
Technical Manual
Selection Guide
Product
S1F78100Y2D0
S1F78100Y2R0
S1F78100Y2L0
Features
• 3.00V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
•
•
•
•
•
•
2.80V positive output voltage regulator.
Low operating current (Typ. 3.0 µA).
Input voltage stability (Typ. 0.1%/V).
2.60V positive output voltage regulator.
Low operating current (Typ. 3.0 µA).
Input voltage stability (Typ. 0.1%/V).
Package
SOT89-3pin
SOT89-3pin
SOT89-3pin
S1F78100Y2F0
• 2.20V positive output voltage regulator.
• Low operating current (Typ. 3.0µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2G0
• 1.80V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F78100Y2H0
• 1.50V positive output voltage regulator.
• Low operating current (Typ. 3.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F79100Y1B0
• –5.00V negative output voltage regulator.
• Low operating current (Typ. 4.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F79100Y1P0
• –4.00V negative output voltage regulator.
• Low operating current (Typ. 4.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F79100Y1D0
• –3.00V negative output voltage regulator.
• Low operating current (Typ. 4.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F79100Y1G0
• –1.80V negative output voltage regulator.
• Low operating current (Typ. 4.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
S1F79100Y1H0
• –1.50V negative output voltage regulator.
• Low operating current (Typ. 4.0 µA).
• Input voltage stability (Typ. 0.1%/V).
SOT89-3pin
DC/DC Switching Regulator
Product
S1F76310M1A0
S1F76310M1K0
S1F76310M1B0
S1F70000 Series
Technical Manual
Features
•
•
•
•
•
•
•
•
•
•
•
•
Step-up switching regulator (from 1.5V to 5.0V).
Low operating voltage (Min. 0.9V).
Low operating current (Typ. 10µA).
High precision voltage detection function and battery backup function.
Built-in CR oscillator circuit.
Power-on clear function.
Step-up switching regulator (from 1.5V to 3.5V).
Low operating voltage (Min. 0.9V).
Low operating current (Typ. 8µA).
High precision voltage detection function and battery backup function.
Built-in CR oscillator circuit.
Power-on clear function.
•
•
•
•
•
•
Step-up switching regulator (from 1.5V to 3.0V).
Low operating voltage (Min. 0.9V).
Low operating current (Typ. 8µA).
High precision voltage detection function and battery backup function.
Built-in CR oscillator circuit.
Power-on clear function.
EPSON
Package
SOP3-8pin
SOP3-8pin
SOP3-8pin
3
Selection Guide
Product
Features
Package
S1F76310M1L0
•
•
•
•
•
•
Step-up switching regulator (from 1.5V to 2.4V).
Low operating voltage (Min. 0.9V).
Low operating current (Typ. 7µA).
High precision voltage detection function and battery backup function.
Built-in CR oscillator circuit.
Power-on clear function.
SOP3-8pin
S1F76380M1H0
•
•
•
•
•
•
•
Step-up switching regulator (from 1.5V to 2.2V).
Low operating voltage (Min. 0.9V).
Low operating current. (Typ. 7µA).
Built-in CR oscillator circuit.
High precision voltage detection.
Output voltage response compensation.
Temperature characteristics of output voltage for LCD panel (-4.5mV/C).
SOP3-8pin
S1F76380M1L0
•
•
•
•
•
•
•
Step-up switching regulator (from 1.5V to 2.4V).
Low operating voltage (Min. 0.9V).
Low operating current. (Typ. 7µA).
Built-in CR oscillator circuit.
High precision voltage detection.
Output voltage response compensation.
Temperature characteristics of output voltage for LCD panel (-4.0mV/C).
SOP3-8pin
S1F76330M1B0
•
•
•
•
•
Step-up switching regulator (from 1.5V to 3.0V).
Low operating voltage (Min. 0.9V).
Low operating current. (Typ. 5µA).
Built-in crystal oscillator circuit.
Equipped with crystal oscillator output pin.
SOP3-8pin
S1F71100M0A0
•
•
•
•
•
Step-down switching regulator (from 3.3V ~ 12.0V to 3.3V).
Power off current : 1µA
Frequency fixing (200kHz) PWM.
Soft start function.
Overcurrent protection function, Low-voltage protection function.
SOP4-8pin
S1F71200M0A0
•
•
•
•
•
Step-up/down switching regulator (from 2.5V ~ 12.0V to 5.0V).
Power off current : 1µA
Frequency fixing (200kHz) PWM.
Soft start function.
Overcurrent protection function.
SSOP2-16pin
S1F71100M0B0
•
•
•
•
•
Step-up/down switching regulator (from 2.5V ~ 12.0V to 3.3V).
Power off current : 1µA
Frequency fixing (200kHz) PWM.
Soft start function.
Overcurrent protection function.
SSOP2-16pin
•
•
•
•
•
•
Voltage detection (Typ. 5.00V).
Output format: COMS.
Low operating power (Typ. 2.0 µA, VDD = 6.0V).
Voltage detection (Typ. 4.80V).
Output format: COMS.
Low operating power (Typ. 2.0 µA, VDD = 5.0V).
Voltage Detector
Product
S1F77210Y1L0
S1F77210Y1K0
4
Features
EPSON
Package
SOP89-3pin
SOP89-3pin
S1F70000 Series
Technical Manual
Selection Guide
Product
Features
Package
S1F77210Y120
• Voltage detection (Typ. 4.60V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 5.0V).
SOP89-3pin
S1F77210Y1J0
• Voltage detection (Typ. 4.40V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 5.0V).
SOP89-3pin
S1F77210Y1M0
• Voltage detection (Typ. 4.20V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 5.0V).
SOP89-3pin
S1F77210Y1T0
• Voltage detection (Typ. 4.00V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 5.0V).
SOP89-3pin
S1F77210Y130
• Voltage detection (Typ. 3.50V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 4.0V).
SOP89-3pin
S1F77210Y1H0
• Voltage detection (Typ. 3.20V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 4.0V).
SOP89-3pin
S1F77210Y1G0
• Voltage detection (Typ. 3.00V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 4.0V).
SOP89-3pin
S1F77210Y1R0
• Voltage detection (Typ. 2.80V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y1F0
• Voltage detection (Typ. 2.65V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y1E0
• Voltage detection (Typ. 2.55V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y1S0
• Voltage detection (Typ. 2.35V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y1P0
• Voltage detection (Typ. 2.25V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y1C0
• Voltage detection (Typ. 2.15V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y2F0
• Voltage detection (Typ. 2.65V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77210Y2C0
• Voltage detection (Typ. 2.15V).
• Output format: COMS.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77200Y1T0
• Voltage detection (Typ. 4.00V).
• Output format: N-ch open drain.
• Low operating power (Typ. 2.0 µA, VDD = 5.0V).
SOP89-3pin
S1F77200Y1F0
• Voltage detection (Typ. 2.65V).
• Output format: N-ch open drain.
• Low operating power (Typ. 2.0 µA, VDD = 3.0V).
SOP89-3pin
S1F77200Y1C0
S1F77200Y1N0
S1F70000 Series
Technical Manual
•
•
•
•
•
•
Voltage detection (Typ. 2.15V).
Output format: N-ch open drain.
Low operating power (Typ. 2.0 µA, VDD = 3.0V).
Voltage detection (Typ. 1.90V).
Output format: N-ch open drain.
Low operating power (Typ. 2.0 µA, VDD = 3.0V).
EPSON
SOP89-3pin
SOP89-3pin
5
Selection Guide
Product
S1F77200Y1B0
S1F77200Y1Y0
S1F77200Y1A0
6
Features
• Voltage detection (Typ. 1.15V).
• Output format: N-ch open drain.
• Low operating power (Typ. 1.5 µA, VDD = 1.5V).
•
•
•
•
•
•
Voltage detection (Typ. 1.10V).
Output format: N-ch open drain.
Low operating power (Typ. 1.5 µA, VDD = 1.5V).
Voltage detection (Typ. 1.05V).
Output format: N-ch open drain.
Low operating power (Typ. 1.5 µA, VDD = 1.5V).
Package
SOP89-3pin
SOP89-3pin
SOP89-3pin
S1F77200Y1V0
• Voltage detection (Typ. 0.95V).
• Output format: N-ch open drain.
• Low operating power (Typ. 1.5 µA, VDD = 1.5V).
SOP89-3pin
S1F77220Y2D0
• Voltage detection (Typ. 1.25V).
• Output format: P-ch open drain.
• Low operating power (Typ. 1.5 µA, VDD = 1.5V).
SOP89-3pin
EPSON
S1F70000 Series
Technical Manual
1. DC/DC Converter
S1F76600 Series
DESCRIPTION
The S1F76600 Series is a highly efficient CMOS DC/
DC converter for doubling an input voltage (from
–1.5V to –8V). This power-saving IC allows portable
computers and similar hand-held equipment to operate
from a single power supply, even when they incorporate
LSIs that operate at voltages different from those of
logic circuits, for example, LCD drivers and analog
LSIs.
The S1F76600C0B0 is available in 8-pin plastic DIPs,
and the S1F76600M0B0, in 8-pin plastic SOPs.
• Fixed-voltage power supplies for medical equipment
• Fixed-voltage power supplies for communications
equipment
• Uninterruptable power supplies
BLOCK DIAGRAM
VDD
OSC1
CR oscillator
OSC2
VI
FEATURES
•
•
•
•
95% (Typ.) conversion efficiency
Two output voltages, VO, relative to VDD and VI
30mA maximum output current at 5V
Connecting-in-series configuration obtains a higher
output voltage (V1=–5V, V0=–15V at two-in-series).
• Low operating voltage
• On-chip CR oscillator
• 8-pin plastic DIP and 8-pin plastic SOP
CAP1+
CAP1–
Voltage converter
VO
PIN ASSIGNMENTS
APPLICATIONS
NC 1
• Fixed-voltage power supplies for battery-operated
equipment
• Power supplies for pagers, memory cards, calculators
and similar hand-held equipment
8 VI
7 VO
S1F76600M0B0
OSC1 3
/C0B0 6 CAP1–
OSC2 2
VDD 4
5 CAP1+
PIN DESCRIPTIONS
Pin No.
Pin name
1
NC
2
OSC2
Resistor connection. Open when using external clock
3
OSC1
Resistor connection. Clock input when using external clock
4
VDD
5
CAP1+
Positive charge-pump connection
6
CAP1–
Negative charge-pump connection
7
VO
×2 multiplier output
8
VI
Negative supply (system ground)
S1F70000 Series
Technical Manual
Description
No connection
Positive supply (system VCC )
EPSON
1–1
S1F76600
Series
S1F76600 Series CMOS DC/DC Converter (Voltage Doubler)
S1F76600 Series
SPECIFICATIONS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Input voltage range
VI
–10.0 to 0.5
V
Output voltage range
VO
Min. –20.0
V
Power dissipation
PD
300 (DIP)
mW
150 (SOP)
Operating temperature range
Topr
–40 to +85
˚C
Storage temperature range
Tstg
–65 to +150
˚C
Soldering temperature(for 10s). See note.
Tsol
260
˚C
Note:
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions.
Never use solder dip to mount S1F70000 series power supply devices.
Recommended Operating Conditions
VDD = 0V, Ta = –40 to +85˚C unless otherwise noted
Parameter
Oscillator startup voltage
Oscillator shutdown voltage
Symbol
VSTA
VSTP
Condition
ROSC = 1MΩ,
C1/C2≤1/20, C2≥10µF,
Ta = –20 to +85˚C
See note 1.
Rating
Unit
Min.
Typ.
Max.
—
—
–1.5
V
ROSC = 1MΩ
—
—
–2.2
ROSC = 1MΩ
–1.5
—
—
V
Load resistance
RL
RL min
See note 2.
—
—
Ω
Output current
IO
—
—
30.0
mA
Clock frequency
fOSC
10.0
—
30.0
kHz
CR oscillator network
resistance
ROSC
680
—
2,000
kΩ
Capacitance
C1, C2
3.3
—
—
µF
Notes:
1. The recommended circuit configuration for low-voltage operation (when V I is between –1.2V and
–2.2V) is shown in the following figure. Note that diode D1 should have a maximum forward voltage of
0.6V with 1.0mA forward current.
2. RL min can be varied depending on the input voltage.
1–2
EPSON
S1F70000 Series
Technical Manual
S1F76600 Series
CL
1
8
2
7
3
6
4
5
+
C2
22µF
RL
S1F76600
Series
Battery
D1
1MΩ
+
C1
10µF
3. RL min is a function of VI.
Minimum load resistance (kΩ)
5
4
VSTA1
3
2
1
0
1.0
VSTA2
1.5
3.0
2.0
Input voltage (V)
4.0
5.0 6.0
Electrical Characteristics
VDD = 0V, Ta = –40 to +85˚C unless otherwise noted
Parameter
Symbol
Condition
Rating
Unit
Min.
Typ.
Max.
Input voltage
VI
–8.0
—
–1.5
V
Output voltage
VO
–16.0
—
—
V
RL = ∞, ROSC = 1MΩ
VI = –5V
—
20
30
µA
RL =∞, VI = –8V
—
—
2.0
µA
Multiplier current
IOPR
Quiescent current
IQ
Clock frequency
fOSC
ROSC = 1MΩ, VI = –5V
16
20
24
kHz
Output impedance
RO
IO = 10mA, VI = –5V
—
75
100
Ω
Multiplication efficiency
Peff
IO = 5mA, VI = –5V
90
95
—
%
OSC1 Input leakage current
ILKI
VI = –8V
—
—
2.0
µA
S1F70000 Series
Technical Manual
EPSON
1–3
S1F76600 Series
Typical Performance Characteristics
1000
Ta = 25°C
VI = –5V
VI = –3V
VI = –2V
fOSC [kHz]
fOSC [kHz]
100
10
1
10
100
1000
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
VI = –5.0V
VI = –3.0V
VI = –2.0V
–40
10000
–20
0
ROSC [kΩ]
(1) Clock frequency vs. External resistance
20
40
Ta [°C]
60
80
100
(2) Clock frequency vs. Ambient temperature
50
0
fOSC = 40kHz
45
Ta = 25˚C
VI = –5.0V
40
Ta = 25°C
fOSC =
20kHz
30
25
20
–5
VO [V]
lOPR [µA]
35
fOSC =
10kHz
–10
15
10
5
–15
0
–7
–6
–5
–4
–3
VI [V]
–2
–1
0
(3) Multiplier current vs. Input voltage
1–4
0
10
20
30
IO [mA]
40
50
(4) Output voltage vs. Output current
EPSON
S1F70000 Series
Technical Manual
S1F76600 Series
0
0
Ta = 25°C
VI = –2.0V
–1
S1F76600
Series
Ta = 25°C
VI = –3.0V
VO [V]
VO [V]
–2
–5
–3
–4
–5
–6
–10
0
10
20
0
30
1
2
3
IO [mA]
(5) Output voltage vs. Output current
4
5 6
IO [mA]
7
8
9
10
(6) Output voltage vs. Output current
300
300
Ta = 25°C
IO = 7mA
Ta = 25°C
IO = 10mA
200
RO [Ω]
RO [Ω]
200
100
100
0
0
–7
–6
–5
–4
–3
–2
–1
0
–7
VI [V]
–5
–4
–3
–2
–1
0
VI [V]
(7) Output impedance vs. Input voltage
S1F70000 Series
Technical Manual
–6
(8) Output impedance vs. Input voltage
EPSON
1–5
S1F76600 Series
100
90
80
IO = 30mA
70
70
IO = 20mA
Peff [%]
60
IO = 0.5mA
IO = 1.0mA
IO = 2.0mA
IO = 4.0mA
90
IO = 10mA
80
Peff [%]
100
IO = 2mA
IO = 5mA
50
40
60
50
40
30
30
VI = –5.0V
20
20
10
10
0
VI = –3.0V
0
1
10
100
1000
1
10
fOSC [kHz]
100
1000
fOSC [kHz]
(9) Multiplication efficiency vs.
Clock frequency
(10) Multiplication efficiency vs.
Clock frequency
100
100
100
100
90
90
90
90
80
80
80
80
70
70
60
60
Peff [%]
60
Peff
70
60
50
50
50
50
40
40
30
30
30
30
20
20
20
20
10
10
10
10
0
10
20
30
40
40
40
Peff
0
0
0
0
0
50
IO [mA]
5
10
15
20
25
30
IO [mA]
(11) Multiplication efficiency/input current
vs. Output current
1–6
II
Ta = 25°C
VI = –3.0V
II [mA]
Ta = 25°C
VI = –5.0V
Peff [%]
70
II [mA]
II
(12) Multiplication efficiency/input current
vs. Output current
EPSON
S1F70000 Series
Technical Manual
S1F76600 Series
100
90
36
ROSC = A • (1/fOSC)
32
70
(A : Constant, When GND is 0V and VDD is 5V, A is
approximately 2.0 × 1010 (I/F).)
28
Ta = 25°C
VI = –2.0V
24
50
II [mA]
60
20
II
40
16
30
12
20
8
10
4
0
So, the ROSC value can be obtained from this formula.
(Recommended oscillation frequency : 10kHz to 30kHz
(ROSC : 2MΩ to 680kΩ))
When the external clock operates, make the pin OSC2
open as shown below and input the 50% duty of the external clock from the pin OSC1.
0
0
1
2
3
4
5
6
7
8
9
10
OSC1
IO [mA]
External clock
(13) Multiplication efficiency/input current
vs. Output current
Open
OSC2
FUNCTIONAL DESCRIPTIONS
CR Oscillator
S1F76600 has a built-in CR oscillator as the internal oscillator, and an external oscillation resistor ROSC is connected between the pins OSC1 and OSC2 before operation.
OSC1
Voltage Multiplier
The voltage multiplier uses the clock signal from the
oscillator to double the input voltage. This requires two
external capacitors—a charge-pump capacitor, C1, between CAP1+ and CAP1–, and a smoothing capacitor,
C2, between VI and VO.
VDD = 0 V
(Note 1)
5V
VI = –5 V
ROSC
OSC2
1
8
2
7
3
6
4
5
+
VO1 = –10V (2VI)
1MΩ
Note 1
Since the oscillation frequency varies with wiring capacitance, make the cables between the terminals OSC1
and OSC2 and ROSC as short as possible.
C1
+ 10µF
Doubled potential levels
When setting the external resistor ROSC, find ROSC suitable for fOSC that brings about the maximum efficiency
from characteristics graph (9) and (10). The relations
between ROSC and fOSC in characteristics graph (1) are
expressed approximately with the following formula as
S1F70000 Series
Technical Manual
C2
10µF
EPSON
VCC
(+5V)
VDD = 0 V
GND
VI = –5 V
(–5V)
VO = (2VI) = –10 V
1–7
S1F76600
Series
Peff
80
Peff [%]
far as the
straight portion (500kΩ < ROSC < 2MΩ) is concerned:
40
S1F76600 Series
TYPICAL APPLICATIONS
Parallel Connection
Connecting two or more chips in parallel reduces the
output impedance by 1/n, where n is the number of devices used.
VDD = 0 V
5V
VI = –5 V
1
8
2
7
+
C2
10µF
1MΩ
1
8
2
7
3
6
4
5
1MΩ
6
3
5
4
C1
10µF
+
C1
10µF
+
VO = –10 V
Serial Connection
Connecting two or more chips in series obtains a higher
output voltage than can be obtained using a parallel
connection, however, this also raises the output impedance.
VDD = 0 V
VI = –5 V
5V
VDD' = VI = –5
1
8
2
7
3
6
+
C2
10µF
1MΩ
1
8
2
7
3
6
4
5
+
C2
10µF
1MΩ
4
+
5
C1
10µF
VO = –10 V = VI'
+
C1
10µF
VO' = –15 V
Potential levels
VDD (0 V)
VI (–5 V)
VO (–10 V)
VDD'
VI'
VO' (–15 V)
Primary stage
1–8
Secondary stage
EPSON
S1F70000 Series
Technical Manual
S1F76600 Series
Positive Voltage Conversion
S1F76600
Series
Diodes can be added to a circuit connected in parallel to
make a negative voltage positive.
VDD = 0 V
VI = –5 V
5V
VO' = 3.8 V
C2
1
8
2
7
3
6
4
5
+
10µF
1MΩ
C1
+
10µF
Simultaneous Voltage Conversion
Combining a multiplier circuit with a positive voltage
conversion circuit generates both –10 and 3.8 V outputs
from a single input.
Potential levels
VO2 = 3.8 V
VDD = 0 V
VI= –5 V
VDD = 0 V
VI = –5 V
VO1 = –10 V
5V
VO2 = 3.8 V
C4
1
8
2
7
3
6
4
5
1MΩ
S1F70000 Series
Technical Manual
+ C2
10µF
+
10µF
VO1 = –10 V
C1
+ 10µF
C3
+
10µF
EPSON
1–9
S1F76620 Series
S1F76620 Series CMOS DC/DC Converter (Voltage Doubler)
DESCRIPTION
FEATURES
S1F76620 is a high efficiency and low power consumption CMOS DC/DC converter. It enables to obtain 2
times step-up output (3.0 to 16V) from input voltage
(1.5 to 8V). Also, S1F76620 enable to drive ICs (liquid
crystal driver, analog IC, etc.), which require another
power supply in addition to logic main power supply,
with a single power supply, and it is suitable for micro
power IC of hand-held computers, handy devices, etc.
due to its small power consumption.
(1) High efficiency and low power consumption
CMOS DC/DC converter
(2) Easy voltage conversion from input voltage VDD (5V)
to positive potential side or negative potential side
• Input VDD (5V) to output –VDD (–5V),
2V DD (10V)
(3) Output current
: Max. 30mA
(VDD = 5V)
(4) Power conversion efficiency : Typ. 95%
(5) Possibility of series connection
(In 2-piece use, VDD = 5V, VO = 15V)
(6) Low voltage operation
: Suitable for
battery drive
(7) Built-in CR oscillator
(8) SOP4-8pin ······························ S1F76620M0A0
Bare Chip ······························· S1F76620D0A0
BLOCK DIAGRAM
Voltage conversion circuit
VDD
VO
OSC1
OSC2
CR oscillator
POFF
GND
CAP1+
1–10
EPSON
CAP1–
S1F70000 Series
Technical Manual
S1F76620 Series
PIN DESCRIPTIONS
POFF
1
8
VO
GND
2
7
CAP1+
OSC1
3
6
CAP1–
OSC2
4
5
VDD
S1F76620
Series
Pin Assignments
Pin Assignments of SOP4-8pin
Pin descriptions
Pin No.
Pin name
1
POFF
2
GND (VSS)
3
OSC1
Oscillation resistor connection pin. Works as the clock input pin when the
external clock operates.
4
OSC2
Oscillation resistor connection pin. Opens when the external clock operates.
5
VDD
6
CAP1–
Pump up capacitor minus side connection pin for 2 times step-up.
7
CAP1+
Pump up capacitor plus side connection pin for 2 times step-up.
8
VO
S1F70000 Series
Technical Manual
Description
Input pin for power off control.
Power pin. (Minus side, System GND)
Power pin. (Plus side, System VCC)
Output pin at the time of 2 times step-up.
EPSON
1–11
S1F76620 Series
Pad Center Coordinates (S1F76620D0A0)
Pad No.
Pad name
Pad center
coordinates
X (µm)
–984
Pad center
coordinates
Y (µm)
1096
788
580
390
96
–218
–510
–802
–1094
–1134
1
2
3
4
5
6
7
8
9
10
(NC)
(NC)
POFF
(NC)
(NC)
(NC)
GND (V SS)
OSC1
OSC2
VDD
11
CAP1–
–892
12
CAP1+
–514
13
14
15
16
17
(NC)
VO
(NC)
(NC)
(NC)
182
372
750
942
1134
984
Description
—
—
Input pin for power off control
—
—
—
Power input pin (Minus side)
Oscillation resistor connection pin
Oscillation resistor connection pin
Power input pin (Plus side)
Pump up capacitor minus side connection pin for 2
times step-up
Pump up capacitor plus side connection pin for 2
times step-up
—
2 times step-up output pin
—
—
—
Chip External Shape
Y
+
X
2.60mm
(0,0)
2.30mm
Pad Assignment
Pad aperture : 100µm × 100µm Chip thickness : 400µm
Note
Do not bond the NC pad.
1–12
EPSON
S1F70000 Series
Technical Manual
S1F76620 Series
CR Oscillator
S1F76620 has a built-in CR oscillator as the internal oscillator, and an external oscillation resistor ROSC is connected between the pins OSC1 and OSC2 before operation.
OSC1
(Note 1)
ROSC
OSC2
Voltage Conversion Circuit
The voltage conversion circuit uses clocks generated in
the CR oscillator to double the input supply voltage
VDD.
In case of 2 times step-up, 2 times voltage (2VDD) of
the input voltage is obtained from the V O pin when a
pump up capacitor is connected between CAP1+ and
CAP2– and a smoothing capacitor is connected between VDD and VO outside.
When GND is 0 and VDD is 5, the relations between
input/output and voltage are as shown below:
CAP1=2VDD=10V
Note 1
Since the oscillation frequency varies with wiring capacitance, make the cables between the terminals OSC1
and OSC2 and ROSC as short as possible.
VDD=5V
GND=0V
When setting the external resistor ROSC, find ROSC suitable for fOSC that brings about the maximum efficiency
from characteristics graph (9) and (10). The relations
between ROSC and fOSC in characteristics graph (1) are
expressed approximately with the following formula as
far as the
straight portion (500kΩ < ROSC < 2MΩ) is concerned:
ROSC = A • (1/fOSC)
(A : Constant, When GND is 0V and VDD is 5V, A is
approximately 2.0 × 1010 (I/F).)
So, the ROSC value can be obtained from this formula.
(Recommended oscillation frequency : 10kHz to 30kHz
(ROSC : 2MΩ to 680kΩ))
When the external clock operates, make the pin OSC2
open as shown below and input the 50% duty of the external clock from the pin OSC1.
OSC1
External clock
OSC2
S1F70000 Series
Technical Manual
Open
EPSON
1–13
S1F76620
Series
FUNCTIONAL DESCRIPTIONS
S1F76620 Series
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Ta = –40 to +85°C)
Rating
Parameter
Symbol
Min.
Max.
Unit
Remarks
—
Input supply voltage
VIN
–0.5
10.0
V
Input pin voltage
VI
–0.5
VDD + 0.5
V
Output voltage
VO
—
20
V
Output supply voltage
VCAP+
–0.5
VDD + 0.5
V
CAP+
Output pin voltage
VCAP–
–0.5
VO + 0.5
V
CAP–
PD
—
Allowable loss
300
mW
150
OSC1, OSC2
—
DIP-8pin
SOP-8pin
Operating temperature
Topr
–40
85
°C
—
Storage temperature
Tstg
–65
150
°C
—
Note 1
Under the conditions exceeding the above absolute maximum ratings, the IC may result in a permanent destruction.
An operation for a long period under the conditions of the above absolute maximum ratings may deteriorate the
reliability remarkably.
Note 2
All voltage values are based on GND being 0V.
1–14
EPSON
S1F70000 Series
Technical Manual
S1F76620 Series
Recommended Operating Conditions
Parameter
Symbol
Rating
Unit
Remarks
Min.
Max.
VSTA1
1.5
—
V
ROSC = 1MΩ
C2 ≥ 10µF CL/C2 ≥ 1/20
See note 2.
VSTA2
2.2
—
V
ROSC = 1MΩ
Step-up stop voltage
VSTP
—
1.5
V
ROSC = 1MΩ
Output load resistance
RL
RLmin
See note 3.
—
Ω
—
Output load current
IO
—
30
mA
—
Oscillation frequency
fOSC
10
30
kHz
—
External resistor for
oscillation
ROSC
680
2000
kΩ
—
Step-up capacitor
C1, C2
3.3
—
µF
—
Step-up start operation
Note 1
All voltages are based on the GND being 0V.
Note 2
The figure below shows the recommended circuit for operation with low voltages (VDD = 1.5 to 2.2V):
CL
RL
1 POFF
VO
8
2 GND
CAP1+
7
C1
3 OSC1
CAP1–
6
4 OSC2
VDD
5
+
–
+
C2 –
*D1
* (DI (VF (IF=1mA) is recommended to be not more than 0.6V.)
Recommended Circuit
Note 3
RLmin varies with input voltage. See Characteristics Graph (15).
S1F70000 Series
Technical Manual
EPSON
1–15
S1F76620
Series
(Ta = –40 to +85°C)
S1F76620 Series
Electrical Characteristics
(VDD = 5V, Ta = –40 to +85°C)
Parameter
Rating
Symbol
Min.
Typ.
Max.
Unit
Remarks
Input supply voltage
VDD
1.8
—
8.0
V
—
Output voltage
VO
—
—
16.0
V
—
IOPR
—
35
50
µA
ROSC = 1MΩ
IQ
—
—
1.0
µA
—
Oscillation frequency
fOSC
16
20
24
kHz
ROSC = 1MΩ
Output impedance
RO
—
85
130
Ω
IO = 10mA
Step-up power conversion efficiency
Peff
90
95
—
%
IO = 5mA
Input leak current
ILKI
—
—
1.0
µA
OSC1 pin
Step-up circuit current
consumption
Static current
Note 1
All voltage values are based on GND being 0V.
1–16
EPSON
S1F70000 Series
Technical Manual
S1F76620 Series
Characteristics Graph
1000
30
26
VDD=5V
24
fOSC[kHz]
fOSC[kHz]
100
VDD=3V
10
S1F76620
Series
28
Ta=25°C
VDD=2V
VDD=5V
22
20
18
16
14
VDD=2V
12
1
10
100
1000
ROSC[kΩ]
10000
10
(1) Oscillation frequency vs.
External resistance for oscillation
–40 –20
0
20 40
Ta[°C]
VDD=3V
60
80 100
(2) Oscillation frequency vs. Temperature
100
10
9
Ta=25°C
C1=C2=10µF
80
8
60
6
fOSC=40kHz
VO [V]
IOPR1 [µA]
7
fOSC=20kHz
40
fOSC=10kHz
5
4
3
20
Ta=25°C
VDD=5V
C1=C2=10µF
2
1
0
0
1
2
3
4
VDD[V]
5
6
(3) Step-up circuit current consumption vs.
Input current
S1F70000 Series
Technical Manual
0
0
5
10
15
20
IO [mA]
25
30
(4) Output voltage (VO) vs. Output current 1
EPSON
1–17
S1F76620 Series
6
4
5
3
VO [V]
VO [V]
4
3
2
2
1
Ta=25°C
VDD=3V
C1=C2=10µF
1
0
0
0
5
10
IO [mA]
15
0
20
(5) Output voltage (VO) vs. Output current 2
300
250
250
200
200
150
100
3
4
5
6 7
IO [mA]
8
9 10
Ta=25°C
IO =10mA
150
Ta=25°C
IO =5mA
0
1
2
50
3
4
5
6
0
0
VDD[V]
(7) Output impedance vs. Input current 1
1–18
2
100
50
0
1
(6) Output voltage (VO) vs. Output current 3
300
RO[Ω]
RO[Ω]
Ta=25°C
VDD=2V
C1=C2=10µF
1
2
3
4
5
6
VDD[V]
(8) Output impedance vs. Input voltage 2
EPSON
S1F70000 Series
Technical Manual
150
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
Ta=25°C
VDD=3V
10
C1=C2=10µF
0
10
15
20
90
80
120
90
50
40
60
Peff[%]
60
IDD[mA]
Peff[%]
70
30
20
10
0
0
10
30
Ta=25°C
VDD=5V
C1=C2=10µF
0
20
30
10
0
0
5
IO [mA]
IO [mA]
(10) Step-up power conversion efficiency vs.
Output current 2
Input current vs. Output current 2
(9) Step-up power conversion efficiency vs.
Output current 1
Input current vs. Output current 1
100
IDD[mA]
100
S1F76620
Series
S1F76620 Series
50
100
40
90
30
80
90
80
50
40
20
Peff[%]
60
IDD[mA]
Peff[%]
70
IO =5mA
IO =2mA
IO =10mA
IO =20mA
70
30
20
10
0
Ta=25°C
VDD=5V
C1=C2=10µF
10
0
0 1 2 3 4 5 6 7 8 9 10
IO [mA]
(11) Step-up power conversion efficiency vs..
Output current 3
Input current vs. Output current 3
S1F70000 Series
Technical Manual
Ta=25°C
VDD=5V
C1=C2=10µF
60
50
1
10
100
focs[kHz]
1000
(12) Step-up power conversion efficiency vs.
Oscillation frequency 1
EPSON
1–19
S1F76620 Series
100
90
90
IO =1mA
IO =5mA
IO =10mA
80
70
Peff[%]
Peff[%]
100
IO =2mA
Ta=25°C
VDD=3V
C1=C2=10µF
60
IO =0.5mA
80
IO =1mA
IO =2mA
70
IO =5mA
Ta=25°C
VDD=2V
C1=C2=10µF
60
50
50
1
10
100
focs[kHz]
1000
1
(13) Step-up power conversion efficiency vs.
Oscillation frequency 2
10
100
focs[kHz]
1000
(14) Step-up power conversion efficiency vs.
Oscillation frequency 3
1.7
1.6
VSTA1[V]
1.5
Ta=25°C
C1=C2=10µF
ROSC=1MΩ
1.4
1.3
1.2
1.1
1.0
0.9
100
1000
10000
100000
RL[Ω]
(15) Step-up start voltage (1) vs. Load resistance
1–20
EPSON
S1F70000 Series
Technical Manual
S1F76620 Series
EXAMPLE OF REFERENCE EXTERNAL CONNECTION
VI
1 POFF
VO
8
2 GND
CAP1+
7
3 OSC1
CAP1–
6
4 OSC2
VDD
5
S1F76620
Series
2 Times Step-up
2 times step-up output of VO (2 × VDD) is obtained from the circuit shown in Figure 1.
2 •VI
+
–
+
–
Figure 1 2 Time Step-up Operation
Parallel Connection
It is possible to make the output impedance (RO) small when several pieces of the circuit shown in Figure 1 are
connected. Parallel connection of n circuits reduces RO to 1/n approximately. One piece of the smoothing capacitor
C2 can be commonly used.
VI
1 POFF
VO
8
2 GND
CAP1+
7
3 OSC1
CAP1–
6
4 OSC2
VDD
5
+
_
+
_
1 POFF
VO 8
2 GND
CAP1+ 7
3 OSC1
CAP1– 6
4 OSC2
VDD 5
+
_
Figure 2 Parallel Connection
S1F70000 Series
Technical Manual
EPSON
1–21
S1F76620 Series
Series Connection
When S1F76620 is connected in series (VDD and VO in the previous stage are connected to GND and VDD in the next
stage respectively), the output voltage can be increased more. But the series connection makes the output impedance
high. Figure 3 shows an example of the series connection to get VO = 15V from VDD = 5V.
Vo=2 •VI
1 POFF
VO
2 GND
VI
Vo'=3 •VI
1 POFF
VO 8
2 GND
CAP1+ 7
3 OSC1
CAP1– 6
4 OSC2
VDD 5
8
CAP1+
7
3 OSC1
CAP1–
6
4 OSC2
VDD
5
+
–
+
–
+
–
+
–
Figure 3 Series Connection
First stage
Next stage
VO=10V
VO'=15V
VDD'
VDD(5V)
GND'
GND(0V)
Figure 4 Power Supply Relations in Series Connection (1)
Note
When the input voltage in the next stage is as per the specification (VDD-GND ≤ 8V) in a series connection, the
output in the first stage (VO-VDD) can be used as the input in the next stage (VDD-GND). (See Figure 5.)
First stage
Next stage
VO=4V
VO'=8V
VDD'
VDD(2V)
GND'
GND(0V)
Figure 5 Power Supply Relations in Series Connection (2)
1–22
EPSON
S1F70000 Series
Technical Manual
S1F76620 Series
S1F76620
Series
Negative Voltage Conversion
S1F76620 can boost input voltage to twice on the positive potential side by using the circuit shown in Figure 6. But
the output voltage drops by the forward voltage VF of the diode. When GND is 0V, VDD is 5V and V F is 0.6V as
shown in Figure 6 for example, VO is calculated as follows: VO = –5V + 2 × 0.6V = –3.8V.
1 POFF
VO
8
2 GND
CAP1+
7
3 OSC1
CAP1–
6
4 OSC2
VDD
5
+ –
+ –
VO'
Figure 6 Negative Voltage Conversion
Negative Voltage Conversion + Positive Voltage Conversion
When the 3 times step-up operation shown in Figure 1 and the positive voltage conversion in Figure 6 are combined,
the circuit shown in Figure 7 can be formed and 10V and –3.8V can be obtained from the input 5V. However, the
output impedance is higher than in case of connection of either one only (the negative voltage conversion or the
positive voltage conversion).
VO1
1 POFF
VO
8
2 GND
CAP1+
7
3 OSC1
CAP1–
6
4 OSC2
VDD
5
Potential Relations Diagram
2 VI
+
–
VDD
+
–
VI
VSS
–VI+2 •VF
VO2
VO2
Figure 7 Negative Voltage Conversion + Positive Voltage Conversion
S1F70000 Series
Technical Manual
EPSON
1–23
S1F76620 Series
MEASUREMENT CIRCUIT
VO
IO
A
V
RL
V
IOPR
1 POFF
VO
8
2 GND
CAP1+
7
C1
A
3 OSC1
CAP1–
6
4 OSC2
VDD
5
+
–
+
C2
–
ROSC
VI
1–24
EPSON
S1F70000 Series
Technical Manual
S1F76620 Series
MECHANICAL DATA
S1F76620M0A0 SOP4-8pin
S1F76620
Series
Reference
D
E
5
INDEX
HE
8
θ
1
4
θ2
e
Symbol
E
D1
A
A1
A2
e
b
C
θ
L
L1
L2
HE
D
θ2
θ3
R
R1
b
A1
A2
A
R1
R
C
Dimension in Milimeters
Nom.
5
—
1.75
0.15
1.6
1.27
0.25
0.35
0.05
0.15
Min.
4.8
—
L2
θ3
Max.
5.2
—
0.45
0.25
Dimension in Inches*
Nom.
Max.
(0.197)
(0.204)
—
—
(0.069)
(0.006)
(0.063)
(0.050)
(0.010)
(0.014)
(0.017)
(0.002)
(0.006)
(0.009)
Min.
(0.189)
—
0.55
6.4
4.8
6.8
5
L
L1
(0.022)
7.2
5.2
(0.252)
(0.189)
(0.268)
(0.197)
(0.283)
(0.204)
* for reference
Note
This drawing is subject to change without notice for improvement.
S1F70000 Series
Technical Manual
EPSON
1–25
2. DC/DC Converter &
Voltage Regulator
S1F76610 Series
S1F76610 Series CMOS DC/DC Converter (Voltage
Doubler / Tripler) & Voltage Regulator
The S1F76610 Series is a highly effecient CMOS DC/
DC converter for doubling or tripling an input voltage.
It incorporates an on-chip voltage regulator to ensure
stable output at the specified voltage. The S1F76610
Series offers a choice of three, optional temperature
gradients for applications such as LCD panel power
supplies.
The S1F76610C0B0 is available in 14-pin plastic DIPs,
the S1F76610M0B0, in 14-pin plastic SOPs, and the
S1F76610M2B0 in 16-pin plastic SSOPs.
FEATURES
• 95% (Typ.) conversion efficiency
• Up to four output voltages, VO, relative to the input
voltage, VI
• On-chip voltage regulator
• 20mA maximum output current at VI = –5V
• Three temperature gradients : –0.1, –0.4 and –0.6%/
°C
• External shut-down control
• 2µA maximum output current when shut-down
• Two-in-series configuration doubles negative output
voltage.
• On-chip RC oscillator
• S1F76610C0B0 ...... Plastic DIP-14 pin
S1F76610M0B0 ...... Plastic SOP5-14 Pin
S1F76610M2B0 ...... Plastic SSOP2-16 pin
APPLICATIONS
• Power supplies for LCD panels
• Fixed-voltage power supplies for battery-operated
equipment
• Power supplies for pagers, memory cards, calculators
and similar hand-held equipment
• Fixed-voltage power supplies for medical equipment
• Fixed-voltage power supplies for communications
equipment
• Power supplies for microcomputers
• Uninterruptable power supplies
BLOCK DIAGRAM
VDD
OSC1
OSC2
CR
oscilator
Reference
voltge
generator
VI
CAP1–
CAP1+
Temperature
gradient
selector
Voltage
multiplier
(1)
TC2
POFF
CAP2–
CAP2+
TC1
Voltage
multiplier
(2)
Voltage regulator
RV
VREG
VO
Multiplication
stage
S1F70000 Series
Technical Manual
Stabilization
stage
EPSON
2–1
S1F76610
Series
DESCRIPTION
S1F76610 Series
PIN ASSIGNMENTS
CAP+
1
14
VDD
CAP–
2
13
OSC1
CAP2+
3
12
OSC2
CAP2–
4
11
POFF
TC1
5
10
RV
TC2
6
9
VREG
VI 7
8
VO
CAP+
CAP–
NC
CAP2+
CAP2–
TC1
TC2
VI
S1F76610C0B0/M0B0
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
VDD
OSC1
NC
OSC2
POFF
RV
VREG
VO
S1F76610M2B0
PIN DESCRIPTIONS
S1F76610C0B0/M0B0
2–2
Pin No.
Pin name
1
CAP1+
Positive charge-pump connection for ×2 multiplier
2
CAP1–
Negative charge-pump connection for ×2 multiplier
3
CAP2+
Positive charge-pump connection for ×3 multiplier
4
CAP2–
Negative charge-pump connection for ×3 multiplier or ×2 multiplier output
5
TC1
6
TC2
7
VI
Negative supply (system ground)
8
VO
×3 multiplier output
9
VREG
10
RV
11
POFF
Voltage regulator output ON/OFF control
12
OSC2
Resistor connection. Open when using external clock
13
OSC1
Resistor connection. Clock input when using external clock
14
VDD
Description
Temperature gradient selects
Voltage regulator output
Voltage regulator output adjust
Positive supply (system VCC)
EPSON
S1F70000 Series
Technical Manual
S1F76610 Series
SPECIFICATIONS
Absolute Maximum Ratings
Ratings
Codes
Input supply voltage
VI – VDD
Input terminal voltage
VI – VDD
Output voltage
V O – VDD
Units
–20/N to VDD + 0.3
V
N = 3: Boosting to a triple voltage
VI – 0.3 to VDD + 0.3
V
OSC1, OSC2, POFF
V
TC1, TC2, RV
–20 to VDD + 0.3
V
VO
Note 3)
VREG
Note 3)
V O to VDD + 0.3
V
PD
Max. 300
mW
Working temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
Tsol
260 • 10
°C • s
and time
N = 2: Boosting to a double voltage
VO – 0.3 to VDD + 0.3
Allowable dissipation
Soldering temperature
Remarks
S1F76610
Series
Parameter
Plastic package
At leads
Notes
1. Using the IC under conditions exceeding the aforementioned absolute maximum ratings may lead to permanent destruction of
the IC. Also, if an IC is operated at the absolute maximum ratings for a longer period of time, its functional reliability may be
substantially deteriorated.
2. All the voltage ratings are based on VDD = 0V.
3. The output terminals (VO,VREG) are meant to output boosted voltage or stabilized boosted voltage. They, therefore, are not the
terminals to apply an external voltage. In case the using specifications unavoidably call for application of an external voltage,
keep such voltage below the voltage ratings given above.
Reconmmended Operating Conditions
VDD = 0V, Ta = –40 to +85˚C unless otherwise noted
Parameter
Oscillator startup voltage
Oscillator shutdown voltage
Load resistance
Output current
Symbol
Conditions
VSTA
R OSC =1MΩ
C 3 = 10 µF, CL/C3 ≤ 1/20,
Ta = –20 to +85˚C.
See note 1.
R OSC = 1MΩ
V STP
R OSC = 1MΩ
RL
Rating
Unit
Min.
Typ.
Max.
—
—
–1.8
—
—
–2.2
–1.8
—
—
V
RLmin.
See note 2.
—
—
Ω
V
IO
—
—
20.0
mA
Clock frequency
fOSC
10.0
—
30.0
kHz
CR oscillator network resistance
ROSC
680
—
2,000
kΩ
C1, C2, C3
3.3
—
—
µF
1,000
kΩ
Capacitance
Stabilization voltage sensing resistance
100
RRV
—
Notes
1. The recommended circuit configuration for low-valtage operation (when VI is between –1.2V and –2.2V) is shown in
the following figure. Note that diode D1 should have a maximum forward voltage of 0.6V with 1.0mA forward current.
2. RL min can be varied depending on the input voltage.
S1F70000 Series
Technical Manual
EPSON
2–3
S1F76610 Series
C1
10µF
+
1
14
2
13
3
12
4
11
5
10
6
9
7
8
ROSC
1MΩ
C2 +
10µF
CL
RL
+C3
22µF
D1
3. RLmin is a function of V1
Minimum load resistance (kΩ)
5
VSTA2
VSTA1
4
3
2
Voltage
tripler
1
Voltage
doubler
0
1
1.5
2
3
4
Input voltage (V)
5
6
Electrical Characteristics
VDD = 0V, V1 = –5V, Ta = –40 to +85°C unless otherwise noted
Parameter
Symbol
Conditions
Rating
Min.
Typ.
Max.
Unit
Input voltage
VI
–6.0
—
–1.8
V
Output voltage
VO
–18.0
—
—
V
–18.0
—
–2.6
V
–18.0
—
–3.2
V
—
40
80
µA
—
5.0
12.0
µA
—
—
2.0
µA
16.0
20.0
24.0
kHz
Regulator voltage
Stabilization circuit operating voltage
Multiplier current
Stabilization current
Quiescent current
Clock frequency
2–4
VREG
RL = ∞, RRV = 1MΩ,
VO = –18V
VO
IOPR1
IOPR2
IQ
fOSC
RL = ∞, ROSC = 1MΩ
RL = ∞, RRV = 1MΩ,
VO = –15V
TC2 = TC1 = VO, RL = ∞
ROSC = 1MΩ
EPSON
S1F70000 Series
Technical Manual
S1F76610 Series
Rating
Symbol
Conditions
Min.
Typ.
Max.
Unit
Output impedance
RO
IO = 10mA
—
150
200
Ω
Multiplication efficiency
Peff
IO = 5mA
90.0
95.0
—
%
—
0.2
—
%/V
—
5.0
—
Ω
—
8.0
—
Ω
–2.3
–1.5
–1.0
TC2 = TC1 = VO,
Ta = 25˚C
–1.7
–1.3
–1.1
TC2 = VDD, TC1 = VO,
Ta = 25˚C
–1.1
–0.9
–0.8
–0.25
–0.1
–0.01
–0.5
–0.4
–0.3
–0.7
–0.6
–0.5
—
—
2.0
Stabilization output voltage
differential
Stabilization output load differential
Stabilization output saturation
resistance
Reference voltage
Temperature gradient
POFF, TC1, TC2, OSC1, and RV
VO = –18 to –8V,
∆VREG
∆VO·VREG VREG = –8V, RL = ∞,
Ta = 25˚C
VO = –15V,
VREG = –8V, Ta = 25˚C,
∆VREG
IO = 0 to 10µA,
∆IO
TC1 = VDD, TC2 = VO
R SAT = ∆(VREG – VO)/∆IO,
R SAT
I O = 0 to 10µA,
R V = VDD, Ta = 25˚C
RC2 = VO, TC1 = VDD,
Ta = 25˚C
V RV
CT
See note.
ILKI
input leakage current
V
%/˚C
µA
Note
CT =
|VREG (50°C)| – |VREG (0°C)|
100
×
50°C – 0°C
|VREG (25°C)|
S1F70000 Series
Technical Manual
EPSON
2–5
S1F76610
Series
Parameter
S1F76610 Series
Typical Performance Characteristics
1000
Ta = 25°C
VI = –5V
VI = –3V
VI = –2V
fOSC [kHz]
fOSC [kHz]
100
10
1
10
100
1000
10000
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
–40
VI = –5.0V
VI = –3.0V
VI = –2.0V
–20
ROSC [kΩ]
(1) Clock frequency vs. External resistance
0
20
40
Ta [°C]
60
80
100
(2) Clock frequency vs. Ambient temperature
150
0
Ta = 25°C
Ta = 25°C
VI = –5.0V
fOSC = 40kHz
100
VO [V]
IOPR [µA]
–5
fOSC =
20kHz
×2 multiplier
–10
50
×3 multiplier
fOSC = 10kHz
–15
0
–7
–6
–5
–4
–3
VI [V]
–2
–1
0
0
(3) Multiplier current vs. Input voltage
2–6
10
20
IO [mA]
30
40
(4) Output voltage vs. Output current
EPSON
S1F70000 Series
Technical Manual
S1F76610 Series
0
0
Ta = 25°C
VI = –3.0V
×2 multiplier
–2
×3 multiplier
–10
–3
×2 multiplier
–4
×3 multiplier
–5
–15
10
20
–6
30
0
IO [mA]
(5) Output voltage vs. Output current
1
2
3
4
5 6
IO [mA]
7
8
9 10
(6) Output voltage vs. Output current
100
60
90
90
90
54
80
80
80
48
70
70
×2 multiplier 60
Peff
50
×3 multiplier
Peff
40
60
Ta = 25°C
VI = –5.0V
70
60
×3 multiplier
II
50
40
30
×2 multiplier
II
20
10
0
0
10
20
30
IO [mA]
40
Peff [%]
100
II [mA]
100
50
30
30
20
20
10
10
0
0
30
×3 multiplier
Peff
24
18
12
×2 multiplier
II
6
0
0
50
×2 multiplier 42
Peff
36
×3 multiplier
II
40
(7) Multiplication efficiency/input current
vs. Output current
S1F70000 Series
Technical Manual
Ta = 25°C
VI = –3.0V
II [mA]
0
Peff [%]
S1F76610
Series
VO [V]
Vo [V]
–5
Ta = 25°C
VI = –2.0V
–1
5
10
15
20
IO [mA]
25
30
(8) Multiplication efficiency/input current
vs. Output current
EPSON
2–7
S1F76610 Series
500
40
100
×2 multiplier
Peff
90
400
32
80
×3 multiplier
Peff
300
24
20
50
×3 multiplier
II
40
RO [Ω]
60
28
II [mA]
Ta = 25°C
VI = –2.0V
70
Peff [%]
Ta = 25°C
IO = 6mA
36
200
16
×3 multiplier
12
30
×2 multiplier
II
20
×2 multiplier
100
8
4
10
0
0
0
0
1
2
3
4
5 6
IO [mA]
7
8
9
–7
10
–6
–5
–4
–3
–2
–1
0
VI [V]
(9) Multiplication efficiency/input current
vs. Output current
(10) Output impedance vs. Input voltage
500
100
Ta = 25°C
IO = 10mA
400
IO = 2mA
90
IO = 5mA
Peff [%]
RO [Ω]
300
200
80
IO = 10mA
70
×3 multiplier
IO = 20mA
×2 multiplier
100
60
IO = 30mA
0
VI = –5.0V
50
–7
–6
–5
–4
–3
–2
–1
0
1
(11) Output impedance vs. Input voltage
10
100
1000
fOSC [kHz]
VI [V]
2–8
Ta = 25°C
(12) Multiplication efficiency vs. Clock frequency
EPSON
S1F70000 Series
Technical Manual
S1F76610 Series
100
–7.850
IO = 0.5mA
IO = 1.0mA
90
VO = –15V
IO = 2.0mA
Ta = 25°C
–7.900
VREG [V]
Peff [%]
IO = 4.0mA
80
S1F76610
Series
70
–7.950
Ta = 25°C
60
VI = – 3.0V
–8.000
0.0001
50
1
10
100
1000
0.0010
0.0100
0.1000
IO [V]
fOSC [kHz]
(13) Multiplication efficiency vs. Clock frequency
(14) Output voltage vs. Output current
–2.850
–5.850
VO = –6V
VO = –9V
Ta = 25°C
Ta = 25°C
–5.900
VREG [V]
VREG [V]
–2.900
–2.950
–5.950
–6.000
0.0001
–3.000
0.0010
0.0100
0.1000
IO [V]
0.0010
0.0100
0.1000
IO [V]
(15) Output voltage vs. Output current
S1F70000 Series
Technical Manual
0.0001
(16) Output voltage vs. Output current
EPSON
2–9
S1F76610 Series
50
Ta = 25°C
0.25
VO = –5V
|VREG-VO| [V]
0.20
VO = –10V
VO = –15V
0.15
0.10
0.05
0.00
100×|VREG(°C)|-|VREG(25°C)|/|VREG(25°C)| [%]
0.30
0
CT0
CT1
CT2
–50
0
5
10
IO [mA]
15
20
–40
(17) Regulator voltage vs. Output current
–20
0
20
40
Ta [°C]
60
80
100
(18) Regulator output stability ratio vs.
Ambient temperature
Temperature Gradient Control
The S1F7661C0B0 offers a choice of three temperature
gradients which can be used to adjust the voltage regulator output in applications such as power supplies for
driving LCDs.
POFF
TC2
TC1
See note 1.
Temperature
gradient
(%/˚C)
See note 2.
Voltage
regulator
output
CR osciliator
1 (VDD)
Low (V O)
Low (VO)
–0.4
ON
ON
1 (VDD)
Low (V O)
High (VDD)
–0.1
ON
ON
1 (VDD)
High (VDD)
Low (VO)
–0.6
ON
ON
1 (VDD)
High (VDD)
High (VDD)
–0.6
ON
OFF
0 (VI)
Low (VO)
Low (VO)
—
OFF
(high impedance)
OFF
0 (VI)
Low (VO)
High (VDD)
—
OFF
(high impedance)
OFF
0 (VI)
High (VDD)
Low (VO)
—
OFF
(high impedance)
OFF
0 (VI)
High (VDD)
High (VDD)
—
OFF
(high impedance)
OFF
Remarks
Serial connection
Multiplier
operational
Notes
1. The definition of LOW for POFF differs from that for TC1 and TC2.
2. The temperature gradient affects the voltage between VDD and VREG.
2–10
EPSON
S1F70000 Series
Technical Manual
S1F76610 Series
FUNCTIONAL DESCRIPTIONS
CR Oscillator
The on-chip CR oscillator network frequency is determined by the external resistor, ROSC, connected between OSC1 and OSC2. This oscillator can be disabled
in favor of an external clock by leaving OSC2 open and
applying an external clock signal to OSC1.
External clock
OSC1
OSC1
VDD = 0 V
External clock
signal
ROSC
OSC2
The voltage multiplier uses the clock signal from the
oscillator to double or triple the input voltage. This requires three external capacitors–two charge-pump capacitors between CAP1+ and CAP1– and CAP2+ and
CAP2–, respectively, and a smoothing capacitor between VI and VO.
S1F76610
Series
Oscillator
Voltage Multiplier
C1 +
10 µF
1
14
2
13
5 V C2 +
10 µF
3
12
4
11
5
10
6
9
7
8
OSC2
Reference Volatge Generator and Voltage
Regulator
The reference voltage generator supplies a reference
voltage to the voltage regulator to control the output.
This voltage can be switched ON and OFF.
VI = –5 V
+
ROSC
1 MΩ
RRV
100 kΩ
to
R2 1 MΩ
R1
+ C4
10 µF
VREG = –8 V
VO = –15 V
C3
10 µF
VDD
POFF
RV
Control signal
RRV = 100 kΩ to 1 MΩ
Double voltage potential levels
VREG
VCC
(+5V)
GND
(–5V)
VDD = 0 V
VI = –5 V
VCAP2 – = 2VI = –10 V
Tripled voltage potential levels
VDD = 0 V
VI = –5 V
VO = 3VI = –15 V
S1F70000 Series
Technical Manual
EPSON
2–11
S1F76610 Series
TYPICAL APPLICATIONS
Voltage Tripler with Regulator
The following figure shows the circuit required to triple
the input voltage, regulate the result and add a temperature gradient of –0.4%/°C. Note that the high input impedance of RV requires appropriate noise countermeasures.
Converting a Voltage Tripler to a Voltage
Doubler
To convert this curcuit to a voltage doubler, remove capacitor C2 and short circuit CAP2– to VO.
VDD = 0 V
VDD = 0 V
C1 + 1
10 µF
2
14
5 V C2 + 3
10 µF
4
12
5
10
6
9
13
11
8
7
VI = –5 V
+ C3
10 µF
ROSC
1 MΩ
R1 RRV
100 kΩ
R2 to
1 MΩ
C1 + 1
10µF
2
14
5 V C2 + 3
10µF
4
12
5
10
6
9
+C4
10 µF
VREG = –8 V
VO = –15 V
=RRV VRV
R1
VI = –5 V
13
ROSC
1 MΩ
11
8
7
VO = –15 V
+ C3
10 µF
Parallel Connection
Connecting two or more chips in parallel reduces the
output impedance by 1/n, where n is the number of devices used.
Only the single output smoothing capacitor, C3, is re-
quired when any number of devices are connected in
parallel. Also, the voltage regulator in one chip is sufficient to regulate the combined output.
VDD = 0 V
5V
VI = –5 V
C1 +
10 µF
1
14
2
13
C2 +
10 µF
3
12
4
11
10
5
10
6
9
6
9
7
8
7
8
C1 +
10 µF
1
14
2
13
C2 +
10 µF
3
12
4
11
5
ROSC
1 MΩ
ROSC
1 MΩ
RRV
100 kΩ
to
1 MΩ
+
C4
10 µF
VREG = –10 V
VO = –15 V
+C3
10 µF
2–12
EPSON
S1F70000 Series
Technical Manual
S1F76610 Series
Serial Connection
connection, however, this also raises the output impedance.
<Precautions when connecting loads>
In case of series connections, when connecting loads
between the first stage VDD (or other potential of the
second stage VDD or up) and the second stage V REG as
shown in Fig. 2-13, be cautions about the following
point.
the first stage VDD (or other potential of the second
stage VDD or up) to cause a voltage exceeding the
absolute maximum rating for the second stage VDD at
the VREG terminal, normal operation of the IC may be
hampered. Consequently, When making a series
connection, insert a diode D1 between the second
stage VI and VREG as shown in Fig. 2-13 so that a
voltage exceeding the second stage VDD or up may
not be applied to the VREG terminal.
* When normal output is not occurring at the VREG terminal such as at times of starting up or when turning
the VREG off by POFF signals, if current flows into the
second stage VREG terminal through the load from
VDD' = VI = –5V
VDD = 0V
10µF
5V
1
10µF
2
13
3
12
4
11
5
10
6
+
7
+
1
14
–
2
13
+
3
12
–
4
11
5
10
6
9
7
8
1MΩ
10µF
9 VO = –10V= VI
8
+
VI = –5V
10µF
14
100kΩ
to
1MΩ
Load
+
+
–
–
10µF
VREG' = –15V
VO = –20V
–
–
10µF
D1
Positive Voltage Conversion
VDD = 0 V
Adding diodes converts a negative voltage to a positive
one.
To convert the voltage tripler shown earlier to a voltage
doubler, remove C2 and D2, and short circuit D3. Small
Schottky diodes are recommended for all these diodes.
The resulting voltage is lowered by VF, the voltage drop
in the forward direction for each diode used. For example, if VDD = 0V, VI = –5V, and VF = 0.6V, the resulting voltages would be as follows.
• For a voltage tripler,
VO = 10 – (3 × 0.6) = 8.2V
• For a voltage doubler,
VO = 5 – (2 × 0.6) = 3.8V
S1F70000 Series
Technical Manual
D1
C1
10 µF
D2
+
C2
10 µF
5V
+
D3
+
VO = 8.2 V C3
10 µF
VI = –5 V
EPSON
1
14
2
13
3
12
4
11
5
10
6
9
7
8
ROSC
1 MΩ
2–13
S1F76610
Series
Connecting two or more chips in series obtains a higher
output voltage than can be obtained using a parallel
S1F76610 Series
Simultaneous Voltage Conversion
Using an External Gradient
Combining a standard voltage tripler circuit with one
for positive voltage conversion generates both –15 and
8.2V outputs from a single input, however, it also raises
the output impedance.
A voltage doubler generates –10 and 3.8V outputs.
The S1F7661C0B0/M0B0 offers three built-in temperature gradients— –0.1, –0.4 and –0.6%/°C.
To set the gradient externally, place a thermistor, RT, in
series with the variable resistor, RRV, used to adjust the
output voltage.
VDD = 0 V
D1
10 µF
+
10 µF
10 µF
+
+
D2
10 µF
+
5V
D3
+ 10 µF
VO2 = 8.2 V
VI = –5 V
1
14
2
13
3
12
4
11
5
10
6
9
8
7
ROSC
1 MΩ
VO1 = –15 V
1
14
2
13
3
12
4
11
5
10
6
9
7
8
VDD
R1
+
10 µF
RRV
RT
RP
VREG
+ 10 µF
Potential levels
VO2 = 8.2V
VDD = 0 V
VI = –5 V
VO1 = –15 V
2–14
EPSON
S1F70000 Series
Technical Manual
S1F76540 Series
DESCRIPTION
• Input voltages
The S1F76540C0A0/M0A0 is a CMOS process,
charge-pumping DC/DC converter and voltage regulator featuring the very high efficiency but low power
consumption. An addition of four, three, or two external capacitors can generate four-, three- or two-time
output voltage in negative direction than the input voltage. Also, the built-in voltage regulator can set any output voltage of DC/DC converter and can output the
regulated voltage using two external resistances. As the
regulator output can have a negative temperature gradient that is required for LCD panels, it is optimum for the
LCD panel power supply.
FEATURES
S1F70000 Series
Technical Manual
• DC/DC converter output
voltage
•
•
•
• Charge-pumping, DC-to-DC converter (four-, threeor two-time negative boosting)
• Built-in voltage regulator (regulated voltage output
circuit)
• High power conversion
efficiency
: 95%
• Low current consumption : 130 µA (V I = –5.0 V
during four-time
boosting, Typ.)
• High output capacity
: 20 mA (Max.)
: –2.4 to –5.5 V (during
four-time boosting)
: 2.4 to –7.3 V (during
three-time boosting)
: 2.4 to –11 V (during
two-time boosting)
•
•
•
: |Input voltage| × 4
(Max.)
Built-in reference voltage for
high-precision regulator : 1.5 ± 0.05 V (at CT0)
Temperature gradient
function of regulator
output voltages
: – 0.04, – 0.15, – 0.35,
– 0.55 (%/°C)
Low standby current
(during power-off)
: 5.0 µA
Power-off by the external signal
Full built-in oscillator circuit
Lineup
: S1F76540M0A0,
16-pin SSOP
: S1F76540C0A0,
16-pin DIP
APPLICATIONS
• Power supply of medium- and small-capacity LCD
panels
• Regulated power supply of battery driven devices
EPSON
2–15
S1F76540
Series
S1F76540 Series Charge Pumping DC/DC Converter &
Voltage Regulator
S1F76540 Series
BLOCK DIAGRAM
VDD
POFF1
POFF2
FC
Reference
voltage
circuit
Power-off
control circuit
Clock
generator
circuit
TC1
TC2
RV
Booster control
circuit
Voltage
regulation
circuit
VREG
VRI
Voltage converter
circuit
VI
C1P
C1N
C3N
C2P
VO
C2N
Figure 2.1 Block diagram
PIN DESCRIPTIONS
VO
1
16
C2P
VRI
2
15
C2N
VREG
3
14
C3N
RV
4
13
C1N
VDD
5
12
C1P
FC
6
11
VI
TC1
7
10
POFF1
TC2
8
9
POFF2
Figure 2.2 S1F76540M0A0/C0A0 pin assignments
2–16
EPSON
S1F70000 Series
Technical Manual
S1F76540 Series
Table 2.1 Pin descriptions
Pad No.
Description
VO
1
18
Four-time booster output
VRI
2
19
Regulator input
VREG
3
20
Regulator output
RV
4
21
Regulator output voltage adjustment input
VDD
5
22, 23
FC
6
24
Internal clock frequency input, and clock input in serial/parallel
connection
TC1
7
3
Regulator output temperature gradient setup input (1)
TC2
8
4
Regulator output temperature gradient setup input (2)
POFF2
9
5
Power-off control input (2)
POFF1
10
6
Power-off control input (1)
VI
11
11, 12
Power voltage (negative)
C1P
12
13
Two- or four-time booster capacitor positive pin
C1N
13
14
Two-time booster capacitor negative pin
C3N
14
15
Four-time booster capacitor negative pin
C2N
15
16
Three-time booster capacitor negative pin
C2P
16
17
Three-time booster capacitor positive pin
S1F70000 Series
Technical Manual
S1F76540
Series
Pin name Pin No.
Power pin (positive)
EPSON
2–17
S1F76540 Series
Table 2.2 Absolute maximum ratings
VDD reference
Parameter
Symbol
Rating
Unit
Min.
Max.
Remarks
Input power voltage
VI
–26.0/N
VDD + 0.3
V
N = Boost time
VI pin
Input pin voltage
V1
VI – 0.3
VDD + 0.3
V
POFF1, POFF2, TC1,
TC2 and FC pins
Output pin voltage 1
VOC1
VI – 0.3
VDD + 0.3
V
C1P and C2P pins
Output pin voltage 2
VOC2
2 × VI – 0.3
VI + 0.3
V
C1N pin
Output pin voltage 3
VOC3
3 × VI – 0.3
2 × VI + 0.3
V
C2N pin
Output pin voltage 4
VOC4
4 × VI – 0.3
3 × VI + 0.3
V
C3N pin
Regulator input power
voltage
VRI
N × VI – 0.3
VDD + 0.3
V
N = Boost time, VRI pin
Regulator input pin voltage
VRV
N × VI – 0.3
VDD + 0.3
V
N = Boost time, RV pin
Output voltage
VO
N × VI – 0.3
VDD + 0.3
V
N = Boost time
VO and VREG pins
Input current
II
80
mA
VI pin
Output current
IO
N ≤ 4: 20
N > 4: 80/N
mA
N = Boost time
VO and VREG pins
Allowable loss
PD
210
mW
Ta ≤ 25°C
Operating temperature
Topr
–30
85
°C
Storage temperature
Tstg
–55
150
°C
Soldering temperature
and time
Tsol
260 • 10
°C • s
At leads
Notes: 1. An operation exceeding the above absolute maximum ratings may cause a malfunction or
permanent damage of devices. The device reliability may drop excessively even if the devices
temporarily operate normally.
2. Electrical potential to peripheral systems:
The S1F76540 common power supply has the highest potential (VDD). The electrical potential given by this specification is based on VDD = 0 V. Take care to avoid a potential problem
during connection to a peripheral system.
2–18
EPSON
S1F70000 Series
Technical Manual
S1F76540 Series
Figure 2.3 Potential relationship
VCC
(+5 V)
System
S1F76540
VDD
(0 V)
5V
VI
(–5 V)
(0 V)
S1F76540
Series
GND
10 V
–10 V
Two-time
boosting
15 V
–15 V
Three-time
boosting
20 V
–20 V
Four-time
boosting
ELECTRICAL CHARACTERISTICS
Table 2.3 DC characteristics (1)
Parameter
Input power voltage
Boost start input power
voltage
Symbol
VI
VSTA
Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V
unless otherwise noted
Characteristics
Min.
–22/N
–2.4
V
N = Boost time if CT1 is selected
–22/N
–2.4
V
N = Boost time if CT2 is selected
–22/N
–2.4
V
N = Boost time if CT3 is selected
–22/N
–2.4
V
N = Boost time, FC = VDD during
no loading
–22/N
–2.4
V
VO
–22
Regulator input voltage
VRI
–22
S1F70000 Series
Technical Manual
VREG
Max. Unit
N = Boost time if CT0 is selected
Boost output voltage
Regulator output voltage
Typ.
IREG = 0, VRI = –22 V
RRV = 1MΩ
EPSON
V
–2.4
V
–2.4
V
2–19
S1F76540 Series
Table 2.3 DC characteristics (2)
Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V
unless otherwise noted
Parameter
Boost output impedance
Boost power conversion
efficiency
Booster operation current
consumption 1
Booster operation current
consumption 2
Regulator operation
current consumption
Symbol
RO
Peff
IOPR1
IOPR2
IOPVR
Characteristics
Min.
Typ. Max. Unit
IO = 10 mA, VI = –5.0 V during
4-time boosting
C1, C2, C3, CO = 10 µF (tantalum)
200
300
Ω
IO = 10 mA, VI = –3.0 V,
Ta = 25°C during 4-time boosting
C1, C2, C3, CO = 10 µF (tantalum)
250
300
Ω
IO = 2 mA, VI = –5.0 V during
4-time boosting
C1, C2, C3, CO = 10 µF (tantalum)
95
%
IO = 2 mA, VI = –3.0 V, Ta = 25°C
during 4-time boosting
C1, C2, C3, CO = 10 µF (tantalum)
94
%
FC = VDD, POFF1 = VI, POFF2 = VDD,
VI = –5.0 V during no loading
C1, C2, C3, CO = 10 µF (tantalum)
130
220
µA
FC = VDD, POFF1 = VI, POFF2 = VDD,
VI = –3.0 V, Ta = 25°C during no loading
C1, C2, C3, CO = 10 µF (tantalum)
100
150
µA
FC = VI, POFF1 = VI, POFF2 = VDD,
VI = –5.0 V during no loading
C1, C2, C3, CO = 10 µF (tantalum)
520
880
µA
FC = VI, POFF1 = VI, POFF2 = VDD,
VI = –3.0 V, Ta = 25°C during no loading
C1, C2, C3, CO = 10 µF (tantalum)
400
600
µA
VRI = –20 V, RRV = 1 MΩ during
no loading
10
15
µA
Static current
IQ
POFF1 = VI, P OFF2 = VI
FC = VDD
5.0
µA
Input leakage current
ILKI
Pins used: POFF1 , POFF2, FC,
TC1, TC2
0.5
µA
20
Ω
0.2
%/V
Regulated output
saturation resistance
0 < IREG < 20 mA
RSAT (*1) RV = VDD
Ta = 25°C
Regulated output
voltage stability
–20 V < VRI < –10 V, IREG = 1 mA
∆VR (*2) VREG = –9 V
Ta = 25°C
2–20
EPSON
10
S1F70000 Series
Technical Manual
S1F76540 Series
Table 2.3 DC characteristics (3)
Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V
unless otherwise noted
Regulated output load
variation
Symbol
Characteristics
Min.
VRI = –20 V, VREG = –15 V,
∆VO (*3) Ta = 25°C setup
0 < IREG < 20 mA
Reference voltage
(Ta = 25°C)
Reference voltage
temperature coefficient
(*4, *5)
30
Max. Unit
50
mV
VREF0
TC1 = VDD , TC2 = VDD
–1.55 –1.50 –1.45
V
VREF1
TC1 = VDD , TC2 = VI
–1.70 –1.50 –1.30
V
VREF2
TC1 = VI, TC2 = VDD
–1.90 –1.50 –1.10
V
VREF3
TC1 = VI, TC2 = VI
–2.15 –1.50 –0.85
V
CT0
TC1 = VDD, TC2 = VDD, SSOP product
–0.07 –0.04
CT1
TC1 = VDD, TC2 = VI, SSOP product
–0.25 –0.15 –0.07 %/°C
CT2
TC1 = VI, TC2 = VDD, SSOP product
–0.45 –0.35 –0.20 %/°C
CT3
TC1 = VI, TC2 = VI, SSOP product
–0.75 –0.55 –0.30 %/°C
VIH
VI = –2.4 to –5.5 V
Pins used: POFF1, POFF2 , FC,
TC1, TC2
0.2 VI
VIL
VI = –2.4 to –5.5 V
Pins used: POFF1, POFF2 , FC,
TC1, TC2
Input voltage level
Booster capacitance
Typ.
CMAX
Capacitors used: C1, C2 and C3
0
%/°C
V
0.8 VI
V
47
µF
∆ (VREG – VRI )
∆IREG
*1
RSAT =
*2
∆VR =
VREG (VRI = –20 V) – VREG (VRI = –10 V)
∆VRI • VREG (VRI = –10 V)
*3
∆VO =
VREG (IREG = 20 mA) – V REG (IREG = 0 mA)
∆IREG
*4
CT =
*5
The reference voltage and temperature coefficient of the chip products may vary depending on the moldings used on each chip. Use these chips only after the temperature test.
S1F70000 Series
Technical Manual
| VREF (50°C) | – | VREF (0°C) |
50°C – 0°C
×
100
| VREF (25°C) |
EPSON
2–21
S1F76540
Series
Parameter
S1F76540 Series
Table 2.4 AC characteristics
VDD = 0 V and VI = –5.0 V
unless otherwise noted
Parameter
Internal clock frequency 1
Symbol
fCL1
Conditions
FC = VDD,
POFF1 = VI
POFF2 = VDD
Pin used: C1P
Internal clock frequency 2
fCL2
FC = VI,
POFF1 = VI
POFF2 = VDD
Pin used: C1P
Min.
Typ. Max. Unit
Ta = 25°C
3.0
4.0
6.0
kHz
Ta = –30°C
to +85°C
2.0
4.0
7.0
kHz
Ta = 25°C
12.0
16.0
24.0
kHz
Ta = –30°C
to +85°C
8.0
16.0
28.0
kHz
FUNCTIONAL DESCRIPTIONS
Clock Generator Circuit
As the S1F76540 has a built-in clock generator circuit,
no more parts are required for voltage boost control.
The clock frequency changes according to the FC pin
voltage level as defined on Table 2.5. Low Output mode
or High Output mode is selectable. This allows frequency selection according to the used capacitance and
load current as the boost output impedance changes depending on the clock frequency and external booster capacitance. However, the High Output mode has the
current consumption approximately four times larger
than the Low Output mode.
Table 2.5 FC pin setup
Characteristics
FC pin
Mode
Clock frequency
High (VDD)
Low Output
4.0 kHz (Typ.)
Low (VI)
Current
Output ripple
Output
Capacitance
consumption
impedance
IOP (*1)
VRR (*2)
See Figure A1. See Figure A1.
High Output 16.0 kHz (Typ.) IOP × Approx. 4 V RI × Approx. 1/4 See Figure A1. See Figure A1.
*1 See the DC characteristics table for current consumption.
*2 See Section Page 2-32 for the output ripple definition and calculation.
2–22
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S1F70000 Series
Technical Manual
S1F76540 Series
Capacitance vs. output impedance characteristic when 4X pressure is applied
Load current = 10 mA, Ta = 25°C, C1 = C2 = C0
Capacitor used: Tantalum electrolytic capacitor
550
S1F76540
Series
500
Output impedance [Ω]
450
400
350
300
250
200
150
1
10
100
C [µF]
VI = –3.0V FC = High
VI = –3.0V FC = Low
VI = –5.0V FC = High
VI = –5.0V FC = Low
Figure A1 Characteristic chart: Capacitance vs. output impedance when 4X pressure is applied
NOTE:
This characteristic chart simply indicates an approximate trend in the characteristics, which
may vary depending on evaluation environment, parts used, and other factors.
S1F70000 Series
Technical Manual
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2–23
S1F76540 Series
Voltage Converter
The voltage converter, consisting of a boost control circuit and a voltage converter circuit, receives clocks
from the clock generator circuit and boosts the input
power voltage (VI) four, three or two times. During
four-time boosting, however, the three-time and two-
time boost outputs cannot be obtained simultaneously.
Figure 2.4 gives the potential relationship during four-,
three- and two-time boosting. The C2P pin is also used
as the master clock output during parallel connection.
Figure 2.4 Electrical potentials during boosting (at –5V input)
VDD
(0 V)
VI
(–5 V)
10 V
–10 V
Two-time
boosting
15 V
–15 V
Three-time
boosting
20 V
–20 V
Four-time
boosting
Caution:
• When connecting a capacitor to the C1P, C2P, C1N, C2N, C3N, or VO pin for voltage conversion,
close the capacitor to the IC package as much as possible to minimize the wiring length.
2–24
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S1F70000 Series
Technical Manual
S1F76540 Series
Reference Voltage Circuit
The S1F76540 has a built-in reference voltage circuit
for voltage regulation. The regulated voltage (explained in the next “voltage regulator circuit” section) is
set depending on the division ratio between this refer-
ence voltage and the external resistance. The reference
voltage can be used to change the temperature coefficient at pins TC1 and TC2. One of four states can be
selected as listed on Table 2.6.
TC1
TC2
(High = VDD) (High = VDD )
Mode
Reference voltage,
VREF (V)
Temperature coefficient,
CT (%/°C)
(Low = VI)
(Low = VI)
Min.
Typ.
Max.
Min.
Typ.
Max.
CT0
High
High
–1.55
–1.5
–1.45
–0.07
–0.04
0
CT1
High
Low
–1.70
–1.5
–1.30
–0.25
–0.15
–0.07
CT2
Low
High
–1.90
–1.5
–1.10
–0.45
–0.35
–0.20
CT3
Low
Low
–2.15
–1.5
–0.85
–0.75
–0.55
–0.30
Notes: 1. The reference voltage is given at Ta = 25°C.
2. The reference voltage and temperature coefficient of the chip products may vary depending
on the moldings used on each chip. Use these chips only after the temperature test.
The temperature coefficient (CT) is defined by the following equation. The negative sign of the temperature coefficient (CT) means that the |VREF| value decreases when the temperature rises.
CT =
| VREF (50°C) | – | VREF (0°C) |
50°C – 0°C
×
100
| VREF (25°C) |
Notes on TC1 and TC2 pin replacement:
• When replacing the TC1 and TC2 pins after power-on, always select the power-off mode (POFF1 = POFF2 = VI )
and replace them by each other.
Voltage Regulator Circuit
The voltage regulator circuit regulates a voltage entered
in the VRI pin and can output any voltage. It uses the
series voltage regulation. As shown in Figure 2.5, the
VRI and VO pins must be short-circuited by a jumper as
short as possible except for larger time boosting by using external diodes.
As shown by equation (1), any output voltage can be set
by the ratio of external division resistors R1 and R2.
The sum of division resistance is recommended to be
S1F70000 Series
Technical Manual
small as possible to avoid an external noise interference. As the current consumed by division resistors
(equation (2)) flows, the 100Ω to 1MΩ are recommended to use.
The temperature coefficient of the regulated voltage is
equal to the temperature coefficient of the reference
voltage that is explained in the “reference voltage circuit” section.
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2–25
S1F76540
Series
Table 2.6 Setup of reference voltage and temperature coefficient
S1F76540 Series
R1
R2
1 VO
C2P 16
2 VRI
C2N 15
3 VREG
C3N 14
4 RV
C1N 13
5 VDD
C1P 12
6 FC
VI 11
7 TC1
POFF1 10
8 TC2
POFF2 9
Figure 2.5 VREG setup and mounting notes
Setup:
• Relationship between VREG and reference voltage
R1 + R2
VREG =
× (Reference voltage)
R1
• Current consumption of division resistors
| VREG |
IREG =
R1 + R2
• • • • Equation (1)
• • • • Equation (2)
Setup example:
• To output VREG = –18 V by four-time boosting if VI = –5 V and VO = –20 V
First, determine the total resistance of division resistors R1 and R2. If the current consumption is assumed to be 20
µA, the total resistance can be obtained from equation (2) as follows:
R1 + R2 = 12V ÷ 20 µA = 900 kΩ
If the reference voltage is -1.5 V, the division resistance ratio can be obtained from equation (1) as follows:
(R1 + R2) / R2 = (–18 V) ÷ (–1.5 V) = 12
Therefore, R1 and R2 are:
R1 = 75 kΩ
R2 = 825 kΩ
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Technical Manual
S1F76540 Series
Changing the temperature coefficient:
• The temperature coefficient of the regulated voltage depends on the temperature coefficient of the reference
voltage (if the division ratio of setup resistors does not depend on the temperature). It is necessary to change the
temperature coefficient using thermistors, resistors or others to set any other temperature coefficient of the
regulated voltage. The following explains how to calculate the VREG voltage in temperature T.
T0
CTR1
CTR2
CT
R1 (T0)
R2 (T0)
VREF (T0)
{ 1 + CC
:
:
:
:
:
:
:
TR2
TR1
× R2 (T0)
× R1 (T0)
C
} × [1+ (T – T ) × 100
]
T
0
• • • • Equation (3)
S1F76540
Series
VREG (T) =
25°C
Temperature coefficient of resistor R1 (Ratio to the value at 25°C)
Temperature coefficient of resistor R2 (Ratio to the value at 25°C)
Temperature coefficient of internal reference voltage (%/°C)
R1 value (Ω) at 25°C
R2 value (Ω) at 25°C
Internal reference voltage (V) at 25°C
If the temperature coefficient of R1 and R2 is identical in equation (3), the VREG voltage depends on the temperature coefficient of internal reference voltage only.
Application notes on voltage regulator circuit:
• To satisfy the absolute maximum ratings of the S1F76540, the setup resistor(s) must be inserted between VDD
and VREG pins of the S1F76540 that uses the voltage regulator. The S1F76540 IC itself may be degraded or
destroyed if the R1 resistor is connected to pin VDD of S1F76540 that does not use the regulator during serial
connection.
• The regulation voltage adjustment input (pin RV) has the very high input impedance, and its noise insertion can
drop the regulator stability. As shown in Figure 2.5, shield the cable between the division resistor and RV pin or
use a cable as short as possible between them.
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Technical Manual
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2–27
S1F76540 Series
Power-off Control Function
The S1F76540 has the power-off function and turns on
or off each circuit function when control signals are entered in the POFF1 and POFF2 pins from an external system (such as microprocessor) as defined on Table 2.7.
This power-off function can also cut the reactive current
in parallel connection and other application circuits.
To use the dual-state, power-off control (all ON and all
OFF states) only, connect pin POFF2 to pin V I and use
only pin POFF1 for power-off control.
Table 2.7 Available combination of power-off control
POFF1
Mode
POFF2
Functions
(High = VDD) (High = VDD) Oscillator Booster Regulator
(Low = VI) (Low = VI)
circuit
circuit
ON
ON
Applications
PS1
High
Low
ON
All circuits are turned on.
PS2
Low
Low
OFF
PS3
High
High
OFF
ON
ON
Slave unit side of parallel connection
(Booster and regulator)
PS4
Low
High
ON
ON
OFF
Master unit side of parallel
connection (Booster only)
OFF (*1) OFF (*2) All circuits are turned off.
*1 When the booster circuit is off, approximately VI + 0.6 V voltage appears at VO pin.
*2 When the regulator is off, the VREG pin becomes high-impedance state.
Application notes on power-off function:
• When using external system signals for power-on control, start to control the power only when VI voltage
becomes stable after power-on. Unstable VI voltage may destroy the IC permanently during on/off control.
VI
VI
POFF1
POFF1
POFF2
POFF2
Figure 2.6 Start timing of power-off control
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Technical Manual
S1F76540 Series
CHARACTERISTICS GRAPH
200
300
280
180
140
120
100
240
S1F76540
Series
Booster output impedance [Ω]
Booster current consumption [µA]
260
160
220
200
180
160
80
140
60
40
120
100
0
1
2
3
4
5
7
6
1
Input voltage [V]
2
3
4
5
6
7
Input voltage [V]
Input voltage (VI) vs. Booster circuit current consumption (IOPR) Input voltage (VI) vs. Booster output impedance (RO)
Peff
(%)
VO
(V)
VO
(V)
VI = –3 V, Four-times Booster
VI = –5 V, Four-times Booster
100.0
–12.00
Peff
(%)
–20.00
100.0
VO
VO
Peff
Peff
50.00
20.00
0
0
0
0
50.00
20.00
IO (mA)
IO (mA)
Power conversion efficiency (Peff) vs. Output voltage (VO)
Input current (IO) vs. Output voltage (VO)
Power conversion efficiency (Peff) vs. Output voltage (VO)
Input current (IO) vs. Output voltage (VO)
Figure 2.7 Characteristics graphs
S1F70000 Series
Technical Manual
EPSON
2–29
S1F76540 Series
APPLICATION CIRCUIT EXAMPLES
Four-time Booster and Regulator
Figure 2.8 gives a wiring example of four-time booster
and regulator that is the typical S1F76540 application.
This example boosts the input voltage (VI ) four times in
negative direction, and outputs the regulated voltage at
VREG pin.
CO
+
VREG
CREG
+
R1
R2
1 VO
C2P 16
2 VRI
C2N 15
3 VREG
C3N 14
4 RV
C1N 13
5 VDD
VDD
6 FC
+
CI
C1P 12
+
C2
C3
C1
+
+
VI 11
7 TC1
POFF1 10
8 TC2
POFF2 9
VI
Figure 2.8 Wiring example of 4-time booster and regulator
◊ Setup conditions of Figure 2.8
• Internal clock : ON (Low Output mode)
• Booster circuit : ON
• Regulator
: ON (if CT = –0.04%/°C)
◊ Power-off procedure
• Set the POFF1 pin to logical low (VI) to turn off all circuits.
◊ Regulator
• For the regulator setup and notes, see the “voltage regulator circuit” section.
◊ Application in other setup conditions
1 When used in the High Output mode
• Connect the FC pin to the VI pin.
2 When changing the temperature coefficient (CT)
• Change the TC1 and TC2 pin setup by following the definition of Table 2.7.
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Technical Manual
S1F76540 Series
4-time Booster
Only the booster circuit operates, and it boosts the input
voltage (VI ) four times in negative direction and outputs
it at the VO pin. As the regulator is not used, the voltage
appearing at the VO pin may contain ripple components.
Figure 2.9 gives a wiring example.
CO
+
C2P 16
2 VRI
C2N 15
3 VREG
C3N 14
4 RV
5 VDD
VDD
6 FC
+
CI
C1N 13
C1P 12
+
S1F76540
Series
VO
1 VO
C2
C3
C1
+
+
VI 11
7 TC1
POFF1 10
8 TC2
POFF2 9
VI
Figure 2.9 Wiring example of 4-time booster
◊ Setup conditions of Figure 2.9
• Internal clock : ON (Low Output mode)
• Booster circuit : ON
• Regulator
: OFF
◊ Power-off procedure
• Set the POFF2 pin to low (VI) to turn off all circuits.
◊ Ripple voltage
• As the output at VO pin is unstable, it can contain ripple components as shown in Figure 2.10. The ripple voltage
(VRP) increases according to the load current, and it can roughly be calculated by equation (4).
S1F70000 Series
Technical Manual
EPSON
2–31
S1F76540 Series
VRP
VRP =
IO
2 • fCL • CO
+ IO • RCOUT
• • • • Equation (4)
where,
IO
: Load current (A)
fCL
: Clock frequency (Hz)
RCOUT : Serial equivalent resistance (Ω) of output capacitor CO
Figure 2.10 Ripple waveforms
◊ Application in other setup conditions
1 When used in the High Output mode
Connect the FC pin to the VI pin.
Parallel Connection (for Increased Boosting)
The parallel connection is useful for reduction of
booster output impedance or reduction of ripple voltage. In the parallel connection of “n” lines, the booster
output impedance can be reduced to approximately “1/
n". Only the smoothing capacitor (CO) for booster output can be used commonly in the parallel connection.
When using the regulator, use only one of “n”
S1F76540 chips which are in parallel connection. (If
multiple regulators are operated in parallel mode, the
reactive current consumption occurs.) Figure 2.11
gives a wiring example of 4-time booster and regulator
where two S1F76540s are parallelly connected.
VREG
+
CO
VDD
1 VO
C2P 16
+
2 VRI
C2N 15
C2
3 VREG
C3N 14
4 RV
C1N 13
5 VDD
C1P 12
6 FC
+
CI
CREG
+
R1
C3
+
C1
+
VI 11
R2
1 VO
C2P 16
+
2 VRI
C2N 15
C2
3 VREG
C3N 14
4 RV
C1N 13
5 VDD
C1P 12
6 FC
C3
+
C1
+
VI 11
7 TC1
POFF1 10
7 TC1
POFF1 10
8 TC2
POFF2 9
8 TC2
POFF2 9
VI
Figure 2.11 Parallel connection example
2–32
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S1F70000 Series
Technical Manual
S1F76540 Series
◊ Setup conditions of Figure 2.11
First stage
• Internal clock : ON (Low Output mode)
• Booster circuit : ON
• Regulator
: OFF
Second stage
• Internal clock : OFF
• Booster circuit : ON
• Regulator
: ON (if CT = –0.04%/°C)
• In Figure 2.11, when the POFF2 pin of the first-stage S1F76540 is set to low (VI), voltage boosting is stopped at
the first and second stages. However, the regulator at the second stage does not stop. Therefore, the voltage that
is approximately VI appears at VREG pin during |VREG| > |VI | setup.
• To set the VREG pin to high-impedance state, set both POFF1 and POFF2 pins to low at the first and second stages.
◊ Application in other setup conditions
1 When used in the High Output mode
• Connect the FC pin of the first-stage S1F76540 to the VI pin.
2 When changing the temperature coefficient (CT)
• Change the TC1 and TC2 pin setup by following the definition of Table 2.7.
Larger Time Boosting Using Diodes
The S1F76540 can be configured to have the five-time
or larger voltage boosting and regulation by adding external diodes. As the booster output impedance increases due to the diode forward voltage drop (VF), the
diodes having a smaller VF are recommended to use.
Figure 2.12 gives a wiring example of 6-time booster
and regulator that use two diodes. The wiring between
VO and VRI must be minimal. Figure 2.13 provides the
potential relationship.
VO '
VREG
CREG
+
1 VO
C2P 16
2 VRI
C2N 15
3 VREG
C3N 14
R2
R1
VDD
4 RV
C1N 13
5 VDD
C1P 12
6 FC
+
CI
C4
+
D1
D2
+
C2
C1
C3
C5
CO
+
+
+
+
VI 11
7 TC1
POFF1 10
8 TC2
POFF2 9
VI
Figure 2.12 Wiring example for 6-time boosting using diodes
S1F70000 Series
Technical Manual
EPSON
2–33
S1F76540
Series
◊ Power-off procedure
S1F76540 Series
◊ Setup conditions of Figure 2.12
• Internal clock : ON (Low Output mode)
• Booster circuit : ON
• Regulator
: ON (if CT = –0.04%/°C)
VDD
VI
VI
4VI
6VI – (2∗VF)
VO
6VI
VO'
2∗VF
Figure 2.13 Potential relationship during 6-time boosting using diodes
◊ Power-off procedure
• Set the POFF1 pin to low (VI ) to turn off all circuits.
◊ Output voltages
• When diodes are used for voltage boosting, the characteristics of diodes directly affect on the voltage boosting
characteristics. The forward voltage drop (VF) of diodes can reduce the booster output voltage. As the example
of Figure 2.12 uses two diodes, the drop of “VF” voltage multiplied by two occurs as shown in Figure 2.13. The
booster output voltage is expressed by equation (5).
To increase the |VO'| value, use the diodes having a smaller VF.
| VO' | = 6 × | VI | – 2 × V F
• • • • Equation (5)
◊ Notes
1 Input and output current conditions
To satisfy the input and output current ratings, limit the total current does not exceed the rated input current.
The total current means the total boost time multiplied by the output load current. The example of Figure 2.12
has the maximum load current of 13.3 mA ( = 80 mA divided by 6).
2 Input and output voltage conditions
To satisfy the input and output voltage ratings, take care not to violate the electric potential relationship of
higher time boosting using diodes. The example of Figure 2.12 must have the “VI ” that can satisfy the input
voltage conditions during 6-time boosting (see Table 2.3).
◊ Application in other setup conditions
1 When used in the High Output mode
Connect the FC pin to the VI pin.
2 When changing the temperature coefficient (CT)
Change the TC1 and TC2 pin setup by following the definition of Table 2.7.
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Technical Manual
S1F76540 Series
Positive Voltage Conversion
The S1F76540 can also boost up a voltage to the positive potential using external diodes. In such case, however, the regulator function is unavailable. Figure 2.14
gives a wiring example for three-time positive boosting,
and Figure 2.15 provides its electrical potential relationship.
D1
D2
D3
VO'
VDD
1 VO
C2P 16
2 VRI
C2N 15
3 VREG
C3N 14
4 RV
C1N 13
5 VDD
C1P 12
6 FC
+
CI
+
C2
S1F76540
Series
C1
+
+
CO
VI 11
7 TC1
POFF1 10
8 TC2
POFF2 9
VI
Figure 2.14 Wiring example of positive voltage conversion (3-time boosting)
◊ Setup conditions of Figure 2.14
• Internal clock : ON (Low Output mode)
• Booster circuit : ON
• Regulator
: OFF
3∗VF
3VI
VDD
VO'
3VI – (3∗VF)
VI
VI
Figure 2.15 Potential relationship during positive voltage conversion (3-time boosting)
◊ Power-off procedure
• Set the POFF2 pin to low (VI) to turn off all circuits.
◊ Two-time boosting
• To boost up a voltage two times, remove capacitor C1 and diode D1 of Figure 2.14, and connect the anode of
diode D2 to the VDD pin.
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Technical Manual
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2–35
S1F76540 Series
◊ Output voltages
• When diodes are used for voltage boosting, the characteristics of diodes directly affect on the voltage boosting
characteristics. The forward voltage drop (VF) of diodes can reduce the booster output voltage. As the example
of Figure 2.14 uses three diodes, the drop of “VF” voltage multiplied by three occurs. The booster output
voltage is expressed by equation (5).
To increase the |VO'| value, use the diodes having a smaller VF.
| VO' | = 3 × | VI | – (3 × VF)
• • • • Equation (6)
◊ Notes
1 Input and output current conditions
To satisfy the input and output current ratings, take care to limit the input current below the ratings.
2 Input and output voltage conditions
During forward voltage conversion, the input voltage ratings are the same as two-time negative voltage boosting (see Table 2.3).
◊ Application in other setup conditions
When used in the High Output mode, connect the FC pin to the VI pin.
Wiring Example When Changing the
Regulator Temperature Coefficient
The temperature coefficient of the regulator depends on
the temperature coefficient of the internal reference
voltage. To set another temperature coefficient, use a
thermistor resistor or others as shown in Figure 2.16.
CO
+
VREG
CREG
+
R1
RP
R2
RT
VDD
1 VO
C2P 16
+
2 VRI
C2N 15
C2
3 VREG
C3N 14
4 RV
C1N 13
5 VDD
C1P 12
6 FC
+
CI
C3
C1
+
+
VI 11
7 TC1
POFF1 10
8 TC2
POFF2 9
VI
Figure 2.16 Wiring example when changing the regulator temperature coefficient
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Technical Manual
S1F76540 Series
◊ Setup conditions of Figure 2.16
• Internal clock
• Booster circuit
• Regulator
• Thermistor resistor
:
:
:
:
ON (Low Output mode)
ON
ON
RT
◊ Power-off procedure
◊ Regulator temperature coefficient
• For the regulator setup and notes, see the “voltage regulator circuit” section of the function.
• The thermistor resistor (RT) has the non-linear temperature characteristics. To correct them to the linear characteristics, insert the RP as shown Figure 2.16.
◊ Application in other setup conditions
• When used in the High Output mode, connect the FC pin to the VI pin.
S1F70000 Series
Technical Manual
EPSON
2–37
S1F76540
Series
• Set the POFF1 pin to low (VI ) to turn off all circuits.
S1F76640 Series
S1F76640 Series CMOS DC/DC Converter & Voltage Regulator
DESCRIPTION
FEATURES
S1F76640 is a high efficiency and low power consumption CMOS DC/DC converter. It is roughly divided into two portions, step-up circuit and stabilization
circuit. The step-up circuit can provide 2 times step-up
outputs (3.6 to 11V), 3 times step-up outputs (5.4 to
16.5V) or 4 times step-up outputs (7.2 to 22V) of input
voltages (1.8 to 5.5V). If external parts (diode, capacitor) are attached to it, it can realize step-up operations of
higher magnifications.
The stabilization circuit enables to set outputs to any
voltages. Since the stabilization circuit can provide
three kinds of minus temperature gradients to stabilized
outputs, it is optimum as a power supply for liquid crystal display (LCD).
Also, S1F76640 enable to drive ICs (liquid crystal
driver, analog IC, etc.), which requires another power
supply in addition to logic main power supply, with a
single power supply. Also, its small power consumption makes it suitable as a micro power supply for handy
devices like hand-held computer.
• High efficiency and low power consumption CMOS
DC/DC converter
• Easy three kinds voltage conversions to positive potential side from input voltage VDD (+3.3V)
. From input voltage VDD (+3.3V) to outputs 2×VDD
(+6.6V), 3×VDD (+9.9V) and 4×VDD (+13.2V).
• Attachment of external parts (diode, capacitor)
makes step-up operations of higher magnifications
possible.
• Built-in output voltage stabilization circuit
· External resistor enables to set any output voltages.
• Output current : Max. 20mA(VDD =+5V)
• Power conversion efficiency : Typ. 95%
• 3 kinds of reference voltages with negative temperature gradient characteristic suitable for LCD drive
power supply can be selected.
• Power off operation by external signal
· Static current at power off time : Max. 2µA
• Possibility of high magnification step-up operation
by series connection
• Low voltage operation .... Optimum for battery drive
• Built-in CR oscillator
• SSOP2-16pin .......... S1F76640M0A0
Bare Chip ................ S1F76640D0A0
• Radiation-resistant design has not been provided for
this specification.
2–38
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
BLOCK DIAGRAM
VO
VRI
CAP1+
VDD
OSC1
OSC2
S1F76640
Series
RV
POFF
Temperature gradient
selection circuit
CAP1–
Voltage stabilization circuit
CAP2+
VREG
Reference voltage generator
CAP2–
Voltage conversion circuit
CAP3+
TC1
TC2
CR oscillator
GND
Step-up circuit
Stabilization circuit
Figure 3-1 Block Diagram
S1F70000 Series
Technical Manual
EPSON
2–39
S1F76640 Series
PIN ASSIGNMENTS
SSOP2-16pin
RV
1
16
VRI
VREG
2
15
VO
TC1
3
14
CAP3+
TC2
4
13
CAP2+
POFF
5
12
CAP2–
(GND)VSS
6
11
CAP1+
OSC1
7
10
CAP1–
OSC2
8
9
VDD
Figure 4-2 Pin Assignments of SSOP2-16pin
2–40
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
PIN DESCRIPTIONS
Pin No. Pin name
Description
RV
2
VREG
Stabilized voltage output pin
3
TC1
Temperature gradient selection pin
4
TC2
Temperature gradient selection pin
5
POFF
VREG output ON/OFF control pin.
When control signal from the system side is input to this pin, the power
off (VREG output power off) control of S1F76640 becomes available.
6
GND
Power supply pin (minus side, system GND)
7
OSC1
Oscillation resistor connection pin.
This pin becomes the clock input pin when an external clock operates.
8
OSC2
Oscillation resistor connection pin.
This pin is released when an external clock operates.
9
VDD
10
CAP1–
Pump up capacitor minus side connection pin for 2 times step-up.
Next stage clock at series connection time.
11
CAP1+
Pump up capacitor plus side connection pin for 2 times step-up
12
CAP2–
Pump up capacitor minus side connection pin for 3 times step-up.
Output pin at 2 time step-up time (to be short-circuited to VO).
13
CAP2+
Pump up capacitor plus side connection pin for 3 times step-up
14
CAP3+
Pump up capacitor plus side connection pin for 4 times step-up.
Output pin at 3 times step-up time (to be short-circuited to VO).
15
VO
Output pin at 3 times step-up time
16
VRI
Stabilization circuit input pin
S1F70000 Series
Technical Manual
Stabilization voltage regulation pin.
When the intermediate tap of the external volume (3-pin resistor)
connected between the VDD pin and the VREG pin is connected to the
RV pin, VREG output voltage can be adjusted.
S1F76640
Series
1
Power supply pin (plus side, system VCC)
EPSON
2–41
S1F76640 Series
CHIP EXTERNAL SHAPE AND PAD CENTER COORDINATES
Pad Center Coordinates
Chip External Shape
S1F7664D0A0
Pad
+
(0,0)
X
2.60mm
Y
2.30mm
Figure 4-4 Pad Assignments
(x)
(y)
(t)
Chip size :
2.30mm × 2.60mm × 0.30mm
PAD aperture : 100µm × 100µm
DIE number : F76640D0A0
2–42
EPSON
Pad Center Coordinates
No.
Name
X[µm]
Y[µm]
1
RV
–984.0
1096.0
2
VREG
788.0
3
(TESTOUT)
580.0
4
TC1
390.0
5
TC2
96.0
6
POFF
–218.0
7
GND
–510.0
8
OSC1
–802.0
9
OSC2
–1094.0
10
VDD
11
CAP1–
–892.0
12
CAP1+
–514.0
13
CAP2–
182.0
14
CAP2+
372.0
15
CAP3+
750.0
16
VO
942.0
17
VRI
1134.0
984.0
–1134.0
S1F70000 Series
Technical Manual
S1F76640 Series
FUNCTIONAL DESCRIPTIONS
CR Oscillator
S1F76640 has a built-in CR oscillator as the internal oscillator, and an external oscillation resistor R OSC is
connected between the pins OSC1 and OSC2 before operation. (Figure 5.1)
(Note 1)
ROSC
OSC1
S1F76640
Series
OSC1
External clock
OSC2
OSC2
Figure 5-1 CR Oscillator
Note 1 :
Open
Figure 5-2 External Clock Operation
Since the oscillation frequency varies with wiring capacitance, make the cables between the terminals
OSC1 and OSC2 and ROSC as short as possible.
When setting the external resistor ROSC, find the oscillation frequency fOSC that brings about the maximum efficiency from Figures 6.5.12 and 6.5.13 and find ROSC suitable for the fOSC from Figure 6.5.1 The relations between
ROSC and fOSC in Figure 6.5.1 are expressed approximately with the following formula as far as the straight portion
(500kΩ < ROSC < 2MΩ) is concerned:
1
ROSC = A⋅ fOSC
When GND is 0V and
[AV : Constant,
is 5V, A is 2.0×10 (1/F).) ]
DD
10
So, the ROSC value can be obtained from this formula.
(Recommended oscillation frequency : 10kHz to 30kHz (ROSC : 2MΩ to 680kΩ)
When the external clock operates, make the pin OSC2 open as shown in Figure 5.2 and input the 50% duty of the
external clock from the pin OSC1.
Voltage Conversion Circuits (I) and (II)
The voltage conversion circuits (I) and (II) doubles and triples the input voltage VDD respectively by using clock
generated in the CR oscillator.
In case of 2 times step-up, 2 times step-up output of the input voltage is obtained from the VO pin when a pump up
capacitor is connected between CAP1+ and CAP1–, CAP2+ and CAP3+ are short-circuited to VO and a smoothing
capacitor is connected between VDD and VO outside.
In case of 3 times step-up, 3 V DD is output from the V O pin when a pump up capacitor is connected between
CAP1+ and CAP1– and between CAP2+ and CAP2– respectively and a smoothing capacitor is connected between
the VDD and VO pins outside.
In case of 4 times step-up, 4 V DD is output from the V O pin when a pump up capacitor is connected between
CAP1+ and CAP1–, between CAP2+ and CAP2– and between CAP1+ and CAP3– respectively and a smoothing
capacitor is connected between the VDD and VO pins outside.
When GND is 0 and VDD is 5, the relations between the input voltage and the output voltage are as shown in
Figures 5-3, 5-4 and 5-5.
S1F70000 Series
Technical Manual
EPSON
2–43
S1F76640 Series
CAP3+=4VDD=20V
Note 3
CAP2+=3VDD=15V
CAP1+=2VDD=10V
Note 2
Note 1
VDD=5V
GND=0V
VDD=5V
GND=0V
VDD=5V
GND=0V
Figure 5-5
Figure 5-4
Figure 5-3
Example of 2 times step-up Example of 3 times step-up Example of 4 times step-up
potential relations
potential relations
potential relations
Note 1 :
Note 2 :
Note 3 :
At the 3 times step-up time, 2 times step-up output (–10V) cannot be taken out from the CAP2– pin.
At the 4 times step-up time, 2 times step-up output (–10V) cannot be taken out from the CAP2– pin.
At the 4 times step-up time, 3 times step-up output (–15V) cannot be taken out from the CAP3– pin.
Reference Voltage Generator, Voltage Stabilization Circuit
The reference voltage generator generates reference voltage necessary for operation of the voltage stabilization
circuit and adds temperature gradient to reference voltage. Three temperature gradients are available, and signal
from the temperature gradient selection circuit select one of them.
The voltage stabilization circuit stabilizes the step-up output voltage VO and outputs optional voltages. When
an external resistor RRV is connected as shown in Figure 5-5 and the potential of the intermediate tap is changed,
VREG output voltage can be set to optional voltages between the reference voltage VRV and V O.
VSS
Control signal
POFF
RV
R1
RRV=100kΩ to 1MΩ
VREG
VREG =
RRV
· VRV
R1
Figure 5-6 Voltage Stabilization Circuit
The voltage stabilization circuit has power off function and can control ON/OFF of VREG output according to
signals from the system side (microprocessor, etc.) When POFF is high (VDD), VREG output is turned on, and when
POFF is Low (GND), it is turned off. When the control is not necessary, POFF is fixed to High (VDD ).
2–44
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
Temperature Gradient Selection Circuit
S1F76640 can provide three kinds of temperature gradients suitable for driving LCD to V REG output as shown
Table 5-1.
Table 5-1 Temperature Gradient Adaptation Table
TC2
(Note 1)
TC1
(Note 1)
Temperature
Gradient CT(Note 2)
VREG
Output
CR
Oscillator
Remarks
—
1(VDD)
Low(VSS)
Low(VSS)
–0.40%/ ˚C
ON
ON
—
1(VDD)
Low(VSS)
High(VO)
–0.25%/ ˚C
ON
ON
—
1(VDD)
High(VO)
Low(VSS)
–0.55%/ ˚C
ON
ON
—
1(VDD)
High(VO)
High(VO)
–0.55%/ ˚C
ON
OFF
Series connection (Note 4)
0(VSS)
Low(VSS)
Low(VSS)
—
OFF(Hi-Z)(Note 3)
OFF
—
0(VSS)
Low(VSS)
High(VO)
—
OFF(Hi-Z)(Note 3)
OFF
—
0(VSS)
High(VO)
Low(VSS)
—
OFF(Hi-Z)(Note 3)
OFF
—
0(VSS)
High(VO)
High(VO)
—
OFF(Hi-Z)
ON
Boosting only (Note 5)
Note 1 :
Note 2 :
CT =
S1F76640
Series
POFF
(Note 1)
Please note that potentials on the High side are different between the POFF pin and TC2/TC1 pin.
The formula below is used to define temperature gradient CT:
1
VREG (50˚C) – VREG (0˚C)
× VREG (25˚C) × 100 (%/˚C)
50˚C–0˚C
Example :When CT=–0.6%/˚C is selected,
⋅ When Ta is 25˚C, the VREG output becomes –8V at 25˚C.
∆VREG /∆T=CT ⋅ VREG (25˚C)  =–0.6 × 10–2 × 8=–48mV/˚C
When the temperature rises 1 ˚C, the  VREG value reduces by 48mV.
⋅ When VREG is –10V at 25˚C, the formula below is formed:
∆ VREG ∆T=–60mV/˚C
Note 3 :
Note 4 :
Note 5 :
At power off time (VREG output : OFF, CR oscillator : OFF), the potential of the VO output is about
VDD +0.5V.
When this mode is selected at a series connection, the first stage clock can drive the next stage IC and
this mode is effective for reducing the power consumption of the next stage IC. (See Figure 8.4)
Select this mode for boosting only. And the current consumption can be reduced.
S1F70000 Series
Technical Manual
EPSON
2–45
S1F76640 Series
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Rating
Parameter
Symbol
Input supply voltage
Input pin voltage
Output voltage
Unit
Remarks
Min.
Max.
VDD
GND-0.3
24/N
V
VDD
N = 2 : 2 times step-up
N = 3 : 3 times step-up
N = 4 : 4 times step-up
VI
GND–0.3
VDD -0.3
V
OSC1,POFF
GND–0.3
VO-0.3
V
TC1,TC2, RV
GND–0.3
22
V
VO Note 3
GND–0.3
VO
V
VREG Note 3
VO
Output pin voltage 1
VOC1
GND–0.3
VDD–0.3
V
CAP1+,CAP2+ OSC2
Output pin voltage 2
VOC2
GND–0.3
2 × VDD–0.3
V
CAP1–
Output pin voltage 3
VOC3
GND–0.3
3 × VDD–0.3
V
CAP2–
Output pin voltage 4
VOC4
GND–0.3
4 × VDD–0.3
V
CAP3–
PD
—
210
mW
Operating temperature
Topr
–40
85
˚C
—
Storage temperature
Tstg
–55
150
˚C
—
Soldering
temperature and time
Tsol
—
260 ⋅ 10
˚C ⋅ s
Allowable loss
Note 1 :
Note 2 :
Note 3 :
2–46
SSOP-16PIN
At leads
Under the conditions exceeding the above absolute maximum ratings, the IC may result in a permanent
destruction. An operation for a long period under the conditions of the above absolute maximum ratings
may deteriorate the reliability remarkably.
All voltage values are based on GND.
The output pins (VO and VREG) are for stabilizing and outputting boosted voltages. So, they are not
used to apply voltage from outside. When voltage is applied from outside for unavoidable reasons, limit
the voltage to the rated voltage mentioned above or less.
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
Recommended Operating Conditions
Parameter
Symbol
Step-up start voltage
Rating
Unit
Remarks
Max.
VSTA1
1.8
—
V
ROSC=1MΩ, C4≥10µF
CL/C4≤1/20
Note 2
VSTA2
2.2
—
V
ROSC=1MΩ
Step-up stop voltage
VSTP
—
1.8
V
ROSC=1MΩ
Output load resistance
RL
RLmin Note 3)
—
Ω
—
Output load current
IO
—
20
mA
—
Oscillation frequency
fOSC
10
30
kHz
—
External resistor
for oscillation
ROSC
680
2000
kΩ
—
3.3
—
µF
—
Step-up capacitor C1 ,C2,C3,C4
S1F76640
Series
Min.
Stabilization output
RRV
100
1000
kΩ
—
regulation resistance
Note 1 : All voltages are based on the GND being 0V.
Note 2 : The figure below shows the recommended circuit for operation with low voltages (VDD=1.8 to 2.2V):
VI
1 RV
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
C2
– +
6 VSS
CAP1+ 11
+
7 OSC1
CAP1– 10
8 OSC2
VDD 9
+
–
–
C1 C3
C4
D1
CL
RL
(D1(VF(1F=1mA) is recommended to be not more than 0.6V.)
Figure 6-2-1 Recommended Circuit Diagram for Low Voltage Operation (Example of 4 times
step-up circuit)
Note 3 : RLmin varies with input voltage. See Characteristics Graph (15).
S1F70000 Series
Technical Manual
EPSON
2–47
S1F76640 Series
Electrical Characteristics
Unless otherwise specified, Ta=–40˚C to +85˚C
GND=0V, VDD=5V
Specification Value
Parameter
Symbol
Input supply voltage
Output voltage
Measurement
Unit
Conditions
Min.
Typ.
Max.
VDD
1.8
—
5.5
V
—
—
VO
—
—
22
V
—
—
VREG
VRV
—
22
V
R=∞, RRV=1MΩ, VO=22V
2
Stabilization circuit
operating voltage
VO
VRV+2.1
—
22
V
—
—
Step-up circuit current
consumption (VDD system)
IOPR1
—
60
100
µA
RL= ∞, ROSC=1MΩ
1
Step-up circuit current
consumption (VRI system)
IOPR2
—
12
25
µA
RL= ∞, ROSC=1MΩ,
VO=20V
2
Static current
IQ
—
—
2
µA
TC2=TC1=VO,RI=∞
1
Oscillation frequency
fOSC
16
20
24
kHz
ROSC=1MΩ
1
Output impedance
RO
—
250
350
Ω
IO=10mA
1
Step-up power conversion
efficiency (Note 2)
Peff
90
95
—
%
IO=5mA
1
Stabilized output
voltage fluctuation
∆VREG
∆VO⋅VREG
—
0.2
—
%/V
10V<VO<20V,VREG=10V
RL= ∞, Ta=25˚C
2
Stabilized output load
fluctuation (Note 3)
∆VREG
∆IO
—
5.0
—
Ω
VO=20V,VREG=15V
Ta=25˚C,0<IO<10mA
TC1=VO,TC2=GND
2
Stabilized output saturation
resistance (Note 4)
RSAT
—
12
—
Ω
RSAT=∆(VO -VREG)/∆IO
0<IO<10mA,RV=VO
Ta=25˚C
2
Reference voltage
VRV0
2.20
3.00
3.80
V
TC2=GND,TC1=VO,Ta=25˚C
2
VRV1
2.30
2.80
3.30
V
TC2=TC1=GND,Ta=25˚C
VRV2
1.70
2.00
2.30
V
TC2=VO,TC1=GND,Ta=25˚C
CT0
–0.45 –0.27 –0.10
%/˚C
VDD =5V,VO=20V
CT1
–0.60 –0.42 –0.25
%/˚C
(Note 5)
CT2
–0.70 –0.55 –0.40
%/˚C
Temperature gradient
Input leak current
2–48
ILKI
—
—
EPSON
2
µA
Circuit
2
POFF ,TC1,TC2,OSC1,RV pins
3
S1F70000 Series
Technical Manual
Note 1 :
Note 2 :
Note 3 :
Note 4 :
Note 5 :
All voltage values are based on GND being 0V.
The value shown here is the step-up circuit conversion efficiency, and (VO-VREG)IOUT is lost when the
stabilization circuit operates. So, it is recommended to operate this so that (VO-VREG) becomes as small
as possible. When (VO-VREG) × IO is large, the IC temperature rises and the characteristics of the
stabilization circuit change.
See Figures 6-5-14, 6-5-15 and 6-5-16.
RSAT means inclination in Fig. 6-5-17, and VO-∆ (VO-VREG) indicates the lower limit voltage of the
VREG output.
The calculation formula of CT is as follows:
1
VREG (50˚C) – VREG (0˚C)
×
× 100 (%/˚C)
CT=
50˚C – 0˚C
VREG (25˚C)
Measurement Circuit (Described on S1F76640M0A0)
Step-up circuit characteristic measurement circuit
A
IO
V
IOPR1
A
ROSC
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
RL
VO
+
C2
+
–
+
C1
–
C3
+
–
C4
–
Stabilization circuit characteristic measurement circuit
VO
RL
R1
V
R2
A
IO
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
A
VI
(RRV=R1+R2)
S1F70000 Series
Technical Manual
EPSON
2–49
S1F76640
Series
S1F76640 Series
S1F76640 Series
Input leak current measurement circuit
2–50
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
A
EPSON
Connection to each
measurement pin
S1F70000 Series
Technical Manual
S1F76640 Series
CHARACTERISTICS GRAPH
30
1000
Ta=25˚C
28
V DD =5V
26
24
V DD =3V
V DD =2V
10
V DD =5V
22
20
S1F76640
Series
fosc[kHz]
fosc[kH Z ]
100
18
16
14
12
10
100
1000
Rosc[kΩ]
10000
-40
V DD =3V
-20
0
20
40
60
80 100
Ta[˚C]
(1) Oscillation frequency vs. External resistance
for oscillation
(2) Oscillation frequency vs. Temperature
20
200
Ta=25˚C
C1=C2=2.2µF
C3=10µF
18
f OSC =40kHz
4 times step-up
3 times step-up
16
150
14
f OSC =20kHz
V O [V]
I OPR1 [µA]
V DD =2V
10
1
100
f OSC =10kHz
2 times step-up
12
10
8
6
50
4
Ta=25˚C
V DD =5V
C1 to C4=10µF
2
0
0
0
1
2
3
4
5
6
0
V DD [V]
20
30
I O [mA]
(3) Step-up circuit current consumption vs. Input
voltage
S1F70000 Series
Technical Manual
10
EPSON
(4) Output voltage (VO) vs. Output current 1
2–51
S1F76640 Series
12
8
4 times step-up
6
3 times step-up
V O [V]
8
V O [V]
4 times step-up
7
10
6
3 times step-up
5
4
3
4
2
Ta=25˚C
V DD =3V
C1 to C4=10µF
2
2 times step-up
Ta=25˚C
V DD =3V
C1 to C4=10µF
1
0
0
0
5
10
I O [mA]
15
20
0
(5) Output voltage (VO) vs. Output current 2
1
2 3
4
700
600
600
500
7
8
9 10
500
4 times step-up
R O [Ω]
4 times step-up
R O [Ω]
5 6
I O [mA]
(6) Output voltage (VO) vs. Output current 3
700
400
3 times step-up
300
400
3 times step-up
300
2 times step-up
200
2 times step-up
200
Ta=25˚C
I O =5mA
100
Ta=25˚C
I O =10mA
100
0
0
0
1
2
3
4
5
6
0
V DD [V]
1
2
3
4
5
6
V DD [V]
(7) Output impedance vs. Input voltage 1
2–52
2 times step-up
(8) Output impedance vs. Input voltage 2
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
100
90
120
80
70
3 times step-up I DD
60
2 times
step-up I DD
Peff[%]
50
30
90
80
80
50
10
40
10
20
30
30
0
5
10
I O [mA]
100
90
80
70
30
3 times step-up Peff
4 times step-up I DD
40
20
3 times
step-up I DD
30
20
0
0
1
2
I O =2mA
50
I O =10mA
40
I O =5mA
3
4
5 6
I O [mA]
7
8
20
10
I O =20mA
Ta=25˚C
V DD =5V
C1 to C4=10µF
10
0
0
9 10
(11) Step-up power conversion efficiency vs. Output current 3
Input current vs. Output current 3
S1F70000 Series
Technical Manual
60
30
Ta=25˚C
V DD =2V
C1 to C4=10µF
2 times step-up I DD
10
Peff[%]
4 times step-up Peff
I DD [mA]
Peff[%]
80
40
50
20
100
50
2 times step-up Peff
60
15
(10) Step-up power conversion efficiency vs.
Output current 2
Input current vs. Output current 2
(9) Step-up power conversion efficiency vs.
Output current 1
Input current vs. Output current 1
70
10
0
I O [mA]
90
20
Ta=25˚C
V DD =3V
C1 to C4=10µF
0
0
0
40
10
0
50
3 times
step-up I DD
2 times
step-up I DD
20
30
Ta=25˚C
V DD =5V
C1 to C4=10µF
60
4 times step-up Peff
4 times step-up I DD
30
20
70
3 times step-up Peff
60
90
4 times step-up I DD
I DD [mA]
Peff[%]
60
40
90
70
4 times step-up Peff
3 times step-up Peff
100
2 times step-up Peff
1
10
100
f OSC [kHz]
1000
(12) Step-up power conversion efficiency - Os vs.illation
frequency 1
EPSON
2–53
S1F76640
Series
150
2 times step-up Peff
I DD [mA]
100
S1F76640 Series
100
100
90
90
80
80
I O =2mA
70
Peff[%]
Peff[%]
60
I O =5mA
50
I O =10mA
40
60
50
30
20
20
Ta=25˚C
V DD =3V
C1 to C4=10µF
10
0
10
100
I O =5mA
Ta=25˚C
V DD =2V
C1 to C4=10µF
10
0
1000
1
10
fosc[kHz]
1000
(14) Step-up power conversion
efficiency vs. Oscillation frequency 3
1.8
0.5
Ta=25˚C
C1 to C4=10µF
R OSC =1MΩ
1.7
V O =20V
0.4
1.6
1.5
V REG –V O [V]
V STA1 [V]
100
fosc[kHz]
(13) Step-up power conversion
efficiency vs. Oscillation frequency 2
1.4
1.3
1.2
V O =12V
V O =8V
0.3
0.2
0.1
1.1
Ta=25˚C
C1 to C4=10µF
0
1.0
100
1000
10000
100000
R L [Ω]
0
5
10
15
20
25
30
I O [mA]
(15) Step-up start voltage (1) vs. Load resistance
2–54
I O =2mA
I O =1mA
40
30
1
I O =0.5mA
70
I O =1mA
EPSON
(16) Stabilization output saturation
resistance vs. Load current
S1F70000 Series
Technical Manual
S1F76640 Series
7.95
5.95
7.90
S1F76640
Series
V REG [V]
6.00
V REG [V]
8.00
5.90
Ta=25˚C
V O =20V
Ta=25˚C
V O =12V
7.85
5.85
0.1
1.0
10.0
100.0
0.1
1.0
I REG [mA]
(18) Output voltage (VREG) vs. Output current 2
4.00
V REG (Ta)–V REG (25˚C)
––––––––––––––––––––––– ×100[V]
V REG (25˚C)
50
V REG [V]
3.95
3.90
Ta=25˚C
V O =8V
1.0
10.0
40
30
20
10
0
–10
C T1
C T0
–20
–30
C T2
–40
–50
–40 –20
100.0
0
20
40
60
80 100
Ta[˚C]
I REG [mA]
(19) Output voltage (VREG) vs. Output current 3
S1F70000 Series
Technical Manual
100.0
I REG [mA]
(17) Output voltage (VREG) vs. Output current 1
3.85
0.1
10.0
EPSON
(20) Reference voltage vs. Temperature
2–55
S1F76640 Series
MECHANICAL DATA
Reference
Unit : mm
Plastic SSOP2-16pin
7Max.
(0.275Max.)
6.6±0.2
(0.260+0.007
–0.008 )
16
INDEX
6.2±0.3
(0.244±0.011)
4.4±0.2
(0.173 +0.008
–0.007 )
9
0˚
10˚
8
1.5±0.1
(0.059±0.003)
1.7Max.
(0.066Max.)
1
0.8
(0.031)
Note :
2–56
0.36±0.1
(0.014+0.004
–0.003)
0.05
(0.002)
0.15±0.05
(0.006+0.003
–0.002 )
0.4
(0.016)
+0.007
0.5±0.2 (0.02 –0.008 )
0.9(0.035)
This dimensional drawing is subject to change without notice for improvement.
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
APPLICATION EXAMPLE
2 Times Step-up, 3 Times Step-up and 4 Times Step-up
VI
1 RV
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
S1F76640
Series
Figure 8.1 shows the connection for getting 4 times step-up output of an input voltage by operating the step-up
circuit only. In case of 3 times step-up, the capacitor C3 is removed and CAP3+ (Pin No. 14) is short-circuited to
VO (Pin No. 15), and 3 times step-up voltage is obtained from VO(CAP3+). In case of 2 times step-up, the capacitor
C2 is also removed and CAP2+ (Pin No. 13) is short-circuited to VO (Pin No. 15), and 2 times step-up voltage (10V)
is obtained from VO (CAP2+).
4VI
+
– C2
+
– C3
+
– C4
+
– C1
Figure 8-1 4 times step-up circuit
4 Times Step-up + Stabilization Circuit
Figure 8-2 shows an application example for stabilizing step-up outputs obtained in 8-(1) through the stabilization
circuit and for providing temperature gradient to V REG output by means of the temperature gradient selection circuit. In this application example, both outputs from V O and V REG can be indicated at the same time. Also,
operation of 3 times step-up + stabilization circuit is possible by using the 3 times step-up operation mentioned in 8(1), and operation of 2 times step-up + stabilization circuit is possible by using the 2 times step-up operation.
VREG
Note 1
+
C5
–
R2
R1
VREG=
Note 2
R1+R2
VI
·VRV
R1
1 RV
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
+
– C2
+
– C3
+
– C4
+
– C1
(RRV=R1+R2)
Figure 8-2 Operation of 4 Times Step-up + Stabilization Circuit (Temperature Gradient CT1 is
selected.)
Note 1 : Since input impedance at the RV pin (No. 1) is high, it is necessary to use a shielded wire as a measure
against noise in case of a long connection. It is also effective to make the RRV value small for reducing
noise influence. (In this case, however, more current comes to be consumed at RRV .)
S1F70000 Series
Technical Manual
EPSON
2–57
S1F76640 Series
Parallel Connection
It is possible to make the output impedance RO small when several pieces of the circuit shown in Figure 8.1 are
connected. Parallel connection of n circuits reduces RO to 1/n approximately. One piece of the smoothing capacitor C4 can be commonly used in the same way. To get stabilized outputs after parallel connection, include 1 pieces
of the circuit shown in Figure 8.2 in the parallel connection of n circuits as shown in Figure 8.3.
1 RV
VRI 16
1 RV
VRI 16
2 VREG
VO 15
2 VREG
VO 15
VREG
3 TC1
RRV
(100kΩ=1MΩ)
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
C2
C1
+
– C3
+
–
+
–
+
– C4
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
C2
+
–
C1
+
–
+
– C3
Figure 8.3 Parallel Connection
Series Connection
When S1F76640 is connected in series (VDD and VO in the previous stage are connected to GND and VDD in the
next stage respectively), the output voltage can be increased more. But the series connection makes the output
impedance high. Figure 8.4 shows an example of the series connection to get VO=25V from VDD=5V and to
stabilize it.
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
8 OSC2
D1
+
–
Load
1 RV
C1 +
CAP1– 10 –
1 RV
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
+
–
+
–
+
–
+
–
VDD 9
Figure 8.4 Series Connection
2–58
EPSON
S1F70000 Series
Technical Manual
Note 1 :
Note 2 :
Precautions on Load Connection
When a load is connected between GND in the first stage (or potential below GND in the second stage
other than that) and VREG in the second stage as shown in Figure 8.4, pay attention to the following.
When a normal output is not available at the VREG pin at the starting time or when the POFF signal turns
off VREG, current may flows from GND in the first stage (or potential below GND in the second stage
other than that) to the VREG pin in the second stage through the load and a voltage higher than the
absolute maximum rating below GND in the second stage may be generated at the V REG pin. As a
result, the IC may not work normally. For series connection, connect the diode D1 between VDD and
VREG in the second stage as shown in Figure 8.4, so that no potential below GND in the second stage is
added to the VREG pin.
Figure 8.4 shows 3 times step-up in the first stage and 4 times step-up in the next stage, but 4 times stepup is possible both in the first stage and in the next stage unless the input voltage VDD’-GND’ exceeds
the specification value (6.0V). This means that each IC in this series connection is requested t satisfy the
specification values (VDD -GND ≤ 6, 0V, VO-GND ≤ 24V). (See Figure 8.5.)
First stage Next stage
VO
V O'
VREG'
VDD'
Max. 6.0V
GND'
VDD
GND
Figure 8.5 Power Supply System in Series Connection
Note 3 :
2 times step-up in the first stage allows using the CAP- output in the first stage as the next stage clock,
but 3 times step-up does not. Attach an external ROSC as the next stage clock for internal oscillation.
Also, since the next stage external clock can operate according the CAP- output in the previous stage as
shown in Table 4.1 only when the temperature gradient CT is -0.6%/˚C, use the internal oscillator in the
same way when other temperature gradients are necessary.
Note 4 :
In case of series connection, the voltage VDD-VREG (VREG’-VDD’ in Figure 8.5) of the IC, for which the
stabilization circuit operates, has temperature gradient. This means that V REG changes at the following
rate as temperature changes:
∆VREG
= CT (VREG’ (25˚C) – GND’)
∆T
S1F70000 Series
Technical Manual
EPSON
2–59
S1F76640
Series
S1F76640 Series
S1F76640 Series
Negative Voltage Conversion
S1F76640 can boost input voltage to negative power on the negative potential side by using the circuit shown in
Figure 8.6. (In case of 3 times step-up, remove the capacitor C3 and the diode D4 and short-circuit the both ends of
D4. In case of 2 times step-up, remove the capacitor C2 and the diode D3 and short-circuit the both ends of D3.) But
the output voltage drops by the forward voltage VF of the diode. When GND is 0V, VDD is 5V and VF is 0.6V as
shown in Figure 8.6 for example, VO is calculated as follows: VO = –15V–4 × 0.6V = –12.6V(In case of 3 times
step-up, VO is calculated to –10V–3×0.6V = –8.2V, and in case of 2 times step-up, VO is calculated to –5V–2 × 0.6V
= –3.8V.)
1 RV
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
VO'
+
–
D3
C2
+
–
D2
C1
D1
–
+ C0
Figure 8.6 Negative Voltage Conversion (Example of 3 times step-up circuit)
Negative Voltage Conversion + Positive Voltage Conversion
When the 3 times step-up operation shown in Figure 8.1 and the positive voltage conversion in Figure 8.6 are
combined, the circuit shown in Figure 8.7 can be formed and 20V and –12.6V can be obtained from the input 5V.
However, the output impedance is higher than in case of connection of either one only (the negative voltage conversion or the positive voltage conversion).
1 RV
VRI 16
2 VREG
VO 15
3 TC1
CAP3+ 14
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
VO'
VO'
+
–
+ –
+
–
+
–
+ –
+
–
Figure 8.7 Negative Voltage Conversion + Positive Voltage Conversion
2–60
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
Example of Temperature Gradient Change by External Temperature Sensor (Thermistor)
VREG
RT
RP
R1
RRV
1 RV
16
2 VREG
15
3
14
4
13
5
12
6 VSS
11
7
10
8
9
S1F76640
Series
S1F76640 has a temperature gradient selection circuit inside the stabilization circuit, and three kinds of temperature gradients, –0.20%/˚C, –0.40%/˚C and –0.60%/˚C, can be selected as the VREG output. When other temperature
gradients are necessary, a thermistor is connected in series to the resistor RRV for output voltage regulation as shown
in Figure 8.8, and temperature gradients can be changed to any values.
Figure 8.8 Example of Temperature Gradient Change
(Pins other than the above Pins 1, 2 and 6 are connected as per Figure 5.2. For Pins 3 and 4, smaller temperature
gradients than those to be changed are selected from Table 4.1 and are set.)
Note 1 :
Note 2 :
Relations among the thermistor, RT and VREG are expressed as follows:
RRV + RT
· VRV
VREG =
R1
When a thermistor is used for RT, it can make the temperature gradient of VREG larger..
The thermistor temperature characteristics are non-linear but can be corrected to linear ones when the
resistor RP is connected to the thermistor in parallel.
S1F70000 Series
Technical Manual
EPSON
2–61
S1F76640 Series
Configuration Example of Voltage Stabilized Output (VREG) Electronic Volume Circuit
Voltage stabilized output (VREG)
+
–
+
–
+
–
+
–
16 VRI
RV 1
15 VO
VREG 2
14 CAP3+
TC1 3
VSS or VO
13 CAP2+
TC2 4
VSS or VO
12 CAP2–
POFF 5
11 CAP1+
VSS 6
10 CAP1–
OSC1 7
9 VDD
OSC2 8
(74HC4051)
13
14
15
12
1
5
2
4
XPOF
(VDD/VSS)
16
IN0
3
IN1
COM
IN2
IN3
IN4
IN5
IN6
A 11
IN7
B 10
C 9
6
INH
CTRL0
CTRL1
CTRL2
VCC
VEE VSS
7
8
Negative voltage input
Positive voltage input
Figure 8.9
2–62
EPSON
S1F70000 Series
Technical Manual
S1F76640 Series
Configuration Example of High Magnification Step-up Circuit with Diode
1 RV
VRI 16
2 VREG
VO 15
VSS or VO
3 TC1
CAP3+ 14
VSS or VO
4 TC2
CAP2+ 13
5 POFF
CAP2– 12
6 VSS
CAP1+ 11
7 OSC1
CAP1– 10
8 OSC2
VDD 9
+
C4
–
+
– C2
+
– C1
+
– C3
S1F76640
Series
S1F76640, if an external diode is attached, can realize 5 times or more step-up operation and voltage stabilized
output. Since the forward voltage drop VF of the diode makes the output impedance of the step-up output higher, it
is recommended to use a diode of small V F. Figure 8.10 shows a configuration example of a circuit with 2 diodes,
which realizes 6 times step-up operation and voltage stabilized output. Make the wire between VO and VRI as short
as possible. Figure 8.11 shows the potential relations diagram
By the way, use the voltage applied to the VRI pin below the absolute maximum rated voltage.
+
– C5
+
– C6
Figure 8.10 Configuration Example of 6 times step-up Circuit with Diode
2 · VF
V O'
VO
4 · VI
6 · V1
6 · VI –2 · VF
VDD
VI
VSS
Figure 8.11 Potential Relations Diagram of 6 times Step-up Circuit with Diode
S1F70000 Series
Technical Manual
EPSON
2–63
3. Voltage Regulator
S1F78100Y Series
S1F78100Y Series CMOS Positive Voltage Regulators
FEATURES
SCI78100Y Series is a fixed type positive voltage regulator developed by using the CMOS silicon gate process
and is composed of a low current consumption reference voltage circuit, a differential amplifier, an output
control transistor and a voltage setting resistor.
The output voltage is fixed inside the IC, and various
standard voltage parts are available.
The package is a SOT89-3pin plastic package.
• Ample lineup : 12 kinds are available in the range
from 2V to 6V.
• Low current consumption : Typ. 3.0µA (VDD=5.0V)
• Small difference between input and output voltages :
Typ. 0.25V (IO= –10mA, VO=5.0V)
• Built-in highly stable reference voltage source :
Typ. 1.0V
• Small output voltage temperature coefficient :
Typ. +100ppm/˚C
• Wide operating voltage range : 15V Max.
S1F78100Y
Series
DESCRIPTION
BLOCK DIAGRAM
VO
(3pin)
VDD
(2pin)
+
–
VREF
VSS
(1pin)
S1F70000 Series
Technical Manual
EPSON
3–1
S1F78100Y Series
PIN DESCRIPTIONS
Pin No.
Pin name
Description
1
VSS
Input voltage pin (minus side)
2
VDD
Input voltage pin (plus side)
3
VO
Output voltage pin
PIN ASSIGNMENTS
SOT89-3pin
1
3–2
2
EPSON
3
S1F70000 Series
Technical Manual
S1F78100Y Series
FUNCTIONAL DESCRIPTIONS
S1F78100Y Series is a fixed positive output type voltage regulator of series regulator system and is fitted
with an output control MOS transistor between the input and output pins as shown in the figure below. The
voltage regulator feeds back voltages (VREG) divided
with the built-in resistors R1 and R2 connected between
VDD
(2pin)
R1+R2
·VREF
R1
(Output control transistor)
S1F78100Y
Series
VO =
the output pin (VO pin) and the V SS pin to compare
them with the reference voltage (VREF) and outputs the
stable output voltage (V0) not depending on input voltage by controlling the gate voltage of the output control
transistor. The output voltage is fixed inside and is decided with the following formula:
VO
(3pin)
R2
(VREG)
+
–
(Operational amplifier)
VREF
R1
VSS
(1pin)
S1F70000 Series
Technical Manual
EPSON
3–3
S1F78100Y Series
LINEUP
Output Voltage
Product
S1F78100Y2A0
Min.
Typ.
Max.
5.75
6.00
6.25
S1F78100Y2B0
4.90
5.00
5.10
S1F78100Y2M0
4.40
4.50
4.60
S1F78100Y2P0
3.90
4.00
4.10
S1F78100Y2K0
3.80
3.90
4.00
S1F78100Y2N0
3.43
3.50
3.57
S1F78100Y2T0
3.23
3.30
3.37
S1F78100Y2C0
3.13
3.20
3.27
S1F78100Y2D0
2.93
3.00
3.07
S1F78100Y2R0
2.73
2.80
2.87
S1F78100Y2L0
2.53
2.60
2.67
S1F78100Y2F0
2.15
2.20
2.25
S1F78100Y2G0
1.75
1.80
1.85
S1F78100Y2H0
1.45
1.50
1.55
Note :
Other output voltages than those listed in the above table are also applicable.
3–4
EPSON
S1F70000 Series
Technical Manual
S1F78100Y Series
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
V DD–VSS
21
Output voltage
VO
VDD+0.3 to VSS -0.3
Output current
IO
100
mA
Allowable loss
PD
200
mW
Topr
–40 to +85
Tstg
–65 to +150
Tsol
260 • 10
(at leads)
Input voltage
Operating temperature
Storage ambient
temperature
Soldering temperature
and time
Unit
V
˚C
S1F78100Y
Series
Parameter
˚C • s
RECOMMENDED OPERATING CONDITIONS
Parameter
Input voltage
Output current
S1F70000 Series
Technical Manual
Symbol
Min.
Typ.
Max.
Unit
V DD–VSS
–
–
15
V
IO
0.01
–
–
mA
EPSON
3–5
S1F78100Y Series
ELECTRICAL CHARACTERISTICS
S1F78100Y2A0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Input voltage
VI
—
Output voltage
VO
VDD=8.0V, IO=–10mA
Ta=25˚C
Min.
Typ.
Max.
Unit
—
—
15
V
5.75
6.00
6.25
V
VDD=6.0V to 15.0V, No load
—
3.0
8.0
µA
VO=6.0V, IO=–10mA
—
0.24
0.38
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=7.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=8.0V
IO=–1mA to –50mA
—
50
—
mV
Supply voltage rejection
ratio
PSRR
VDD=8.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y2B0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Min.
Typ.
Max.
Unit
—
—
15
V
4.90
5.00
5.10
V
VDD=5.0V to 15.0V, No load
—
3.0
8.0
µA
VO=5.0V, IO=–10mA
—
0.25
0.40
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta=–30˚C to +85˚C
(Same temperature condition)
VDD=6.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=7.0V
IO=–1mA to –50mA
—
50
—
mV
Supply voltage rejection
ratio
PSRR
VDD=7.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
Output voltage
Current consumption
Conditions (VSS=0.0V)
VI
—
VO
VDD=7.0V, IO=–10mA
Ta=25˚C
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
3–6
Symbol
EPSON
S1F70000 Series
Technical Manual
S1F78100Y Series
S1F78100Y2M0
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
4.40
4.50
4.60
V
V DD=4.5V to 15.0V, No load
—
3.0
8.0
µA
V O=4.5V, IO= –10mA
—
0.26
0.42
V
—
0
+100
+200
ppm/˚C
∆VO
∆V I · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=6.0V to 15.0V
I O= –10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=6.0V
I O= –1mA to –40mA
—
40
—
mV
Supply voltage rejection
ratio
P SRR
V DD=6.0V, fin=40kHz
C L=10µF, IO= –5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
V DD=6.0V, IO= –10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
V I–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y
Series
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
S1F78100Y2P0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
3.90
4.00
4.10
V
V DD=4.0V to 15.0V, No load
—
3.0
8.0
µA
V O=4.0V, IO= –10mA
—
0.27
0.44
V
—
0
+100
+200
ppm/˚C
∆VO
∆V I · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=5.0V to 15.0V
I O=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=6.0V
I O= –1mA to –40mA
—
40
—
mV
Supply voltage rejection
ratio
P SRR
V DD=6.0V, fin=40kHz
C L=10µF, IO= –5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
V DD=6.0V, IO= –10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
V I–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F70000 Series
Technical Manual
EPSON
3–7
S1F78100Y Series
S1F78100Y2K0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
3.80
3.90
4.00
V
VDD=3.9V to 15.0V, No load
—
3.0
8.0
µA
VO=3.9V, IO=–10mA
—
0.27
0.44
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=5.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=6.0V
IO=–1mA to –40mA
—
40
—
mV
Supply voltage rejection
ratio
PSRR
VDD=6.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=6.0V, IO=–10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y2N0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Min.
Typ.
Max.
Unit
Conditions (VSS=0.0V)
—
—
15
V
3.43
3.50
3.57
V
VDD=3.5V to 15.0V, No load
—
3.0
8.0
µA
VO=3.5V, IO= –10mA
—
0.29
0.48
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=5.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=5.0V
IO=–1mA to –30mA
—
30
—
mV
Supply voltage rejection
ratio
PSRR
VDD=5.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=5.0V, IO=–10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
3–8
Symbol
EPSON
S1F70000 Series
Technical Manual
S1F78100Y Series
S1F78100Y2T0
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
3.23
3.30
3.37
V
V DD=3.3V to 15.0V, No load
—
3.0
8.0
µA
V O=3.3V, IO= –10mA
—
0.30
0.50
V
—
0
+100
+200
ppm/˚C
∆VO
∆V I · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=4.0V to 15.0V
I O= –10mA
—
0.1
–
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=5.0V
I O= –1mA to –30mA
—
30
–
mV
Supply voltage rejection
ratio
P SRR
V DD=5.0V, fin=40kHz
C L=10µF, IO= –5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
V DD=5.0V, IO= –10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
V I–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y
Series
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
S1F78100Y2C0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
3.13
3.20
3.27
V
V DD=3.2V to 15.0V, No load
—
3.0
8.0
µA
V O=3.2V, IO= –10mA
—
0.30
0.50
V
—
0
+100
+200
ppm/˚C
∆VO
∆V I · VO
Ta=–30˚C to +85˚C
(Same temperature condition)
V DD=4.0V to 15.0V
I O= –10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=5.0V
I O= –1mA to –30mA
—
30
—
mV
Supply voltage rejection
ratio
P SRR
V DD=5.0V, fin=40kHz
C L=10µF, IO= –5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
V DD=5.0V, IO= –10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
V I–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F70000 Series
Technical Manual
EPSON
3–9
S1F78100Y Series
S1F78100Y2D0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
2.93
3.00
3.07
V
VDD=3.0V to 15.0V, No load
—
3.0
8.0
µA
VO=3.0V, IO=–10mA
—
0.31
0.52
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=4.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=5.0V
IO=–1mA to –30mA
—
30
—
mV
Supply voltage rejection
ratio
PSRR
VDD=5.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=5.0V, IO=–10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y2R0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Min.
Typ.
Max.
Unit
Conditions (VSS=0.0V)
—
—
15
V
2.73
2.80
2.87
V
VDD=2.8V to 15.0V, No load
—
3.0
8.0
µA
VO=2.8V, IO=–10mA
—
0.32
0.54
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=4.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=5.0V
IO=–1mA to –30mA
—
30
—
mV
Supply voltage rejection
ratio
PSRR
VDD=5.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=5.0V, IO=–10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
3–10
Symbol
EPSON
S1F70000 Series
Technical Manual
S1F78100Y Series
S1F78100Y2L0
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
2.53
2.60
2.67
V
V DD=2.6V to 15.0V, No load
—
3.0
8.0
µA
V O=2.6V, IO= –10mA
—
0.33
0.56
V
—
0
+100
+200
ppm/˚C
∆VO
∆V I · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=4.0V to 15.0V
I O= –10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
V DD=5.0V
I O= –1mA to –40mA
—
30
—
mV
Supply voltage rejection
ratio
P SRR
V DD=5.0V, fin=40kHz
C L=10µF, IO= –5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
V DD=5.0V, IO= –10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
V I–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y
Series
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
S1F78100Y2F0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
2.15
2.20
2.25
V
VDD=2.2V to 15.0V, No load
—
3.0
8.0
µA
VO=2.2V, IO= –5mA
—
0.36
0.62
V
—
0
+100
+200
ppm/˚C
∆V O
∆VI · VO
Ta=–30˚C to +85˚C
(Same temperature condition)
VDD=3.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆V O
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=3.0V
IO=–1mA to –10mA
—
20
—
mV
Supply voltage rejection
ratio
PSRR
VDD=3.0V, fin=40kHz
CL=10µF, IO=–5mA
—
– 40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=3.0V, IO=–10mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆V O
VO
Input stability
S1F70000 Series
Technical Manual
EPSON
3–11
S1F78100Y Series
S1F78100Y2G0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Symbol
Conditions (VSS=0.0V)
Min.
Typ.
Max.
Unit
—
—
15
V
1.75
1.80
1.85
V
VDD=2.2V to 15.0V, No load
—
3.0
8.0
µA
VO=1.8V, IO=–1mA
—
0.075
0.18
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=3.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=3.0V
IO=–1mA to –10mA
—
20
—
mV
Supply voltage rejection
ratio
PSRR
VDD=3.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=3.0V, IO=–1mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
S1F78100Y2H0
(Unless otherwise specified, Ta ranges from –40˚C to +85˚C.)
Parameter
Min.
Typ.
Max.
Unit
Conditions (VSS=0.0V)
—
—
15
V
1.45
1.50
1.55
V
VDD=2.2V to 15.0V, No load
—
3.0
8.0
µA
VO=1.5V, IO=–1mA
—
0.18
0.5
V
—
0
+100
+200
ppm/˚C
∆VO
∆VI · VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=3.0V to 15.0V
IO=–10mA
—
0.1
—
%/V
Load stability
∆VO
Ta= –30˚C to +85˚C
(Same temperature condition)
VDD=3.0V
IO=–1mA to –10mA
—
20
—
mV
Supply voltage rejection
ratio
PSRR
VDD=3.0V, fin=40kHz
CL=10µF, IO=–5mA
—
–40
—
dB
Input voltage
VI
—
Output voltage
VO
VDD=3.0V, IO=–1mA
Ta=25˚C
Current consumption
IOPR
Difference between input
and output voltages
VI–VO
Output voltage
temperature characteristic
∆VO
VO
Input stability
3–12
Symbol
EPSON
S1F70000 Series
Technical Manual
S1F78100Y Series
Note : Circuit Diagram for Measuring Supply Voltage Rejection Ratio Characteristic
fin=50kHz
VDD
S1F78100Y Series
VO
VDD
CL
CL=10µF
S1F70000 Series
Technical Manual
EPSON
IL
S1F78100Y
Series
VSS
IL=10mA
3–13
S1F78100Y Series
EXAMPLE OF REFERENCE EXTERNAL CONNECTION
S1F78100Y Series
(2pin)
(3pin)
VO
VDD
Input voltage
CIN
Output voltage
COUT
VSS
(1pin)
MECHANICAL DATA
S1F78100Y SOT89-3pin
Reference
4.5±0.1
0.48Max.
0.44Max.
1.5
1.5±0.1
1.5
3
0.44Max.
2
0.8Min.
1
4.25Max.
2.5±0.1
0.4
1.8Max.
0.48Max.
0.53Max.
(Unit : mm)
3–14
EPSON
S1F70000 Series
Technical Manual
S1F78100Y Series
CHARACTERISTICS GRAPH
S1F78100Y2B0
IOPR–Ta
IOPR–VI
7.0
6.0
6.0
VDD=7V
Ta=25˚C
IO=0mA
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.0
–40
3.0
S1F78100Y
Series
4.0
IOPR [µA]
IOPR [µA]
4.0
–20
0
20
40
Ta [˚C]
60
80
0.0
100
0
5
(VO–VI)–Ta
2.0
1.8
1.8
VDD=4.9V
1.6
1.6
IO = –50mA
Ta=25˚C
VDD=4.9V
1.4
(VI–VO)[V]
1.4
(VO–VI)[A]
15
(VI–VO)–IO
2.0
1.2
1.0
0.8
IO = –10mA
0.6
1.2
1.0
0.8
0.6
0.4
0.4
0.2
0.2
0.0
–40
10
VI [V]
–20
S1F70000 Series
Technical Manual
0
20
40
Ta [˚C]
60
80
100
0.0
–50
EPSON
–40
–30
–20
IO [mA]
–10
0
3–15
S1F78100Y Series
VO–Ta
VO–VI
6.0
5.5
IO=–10mA
VDD=7V
5.0
VO [V]
VO [V]
4.0
5.0
3.0
IO = –50mA
2.0
Ta=25˚C
1.0
4.5
–40
–20
0
20
40
Ta [˚C]
60
80
0.0
100
∆VO–Ta
10
15
VO–IO
5.5
5.3
VDD=7V
–50mA≤IO≤–1mA
VO [V]
∆VO [mV]
5
VI [V]
40
30
0
20
Ta=25˚C
VDD=7V
5.1
4.9
10
4.7
0
–40
3–16
–20
0
20
40
Ta [˚C]
60
80
100
EPSON
4.5
–50
–40
–30
–20
IO [mA]
–10
0
S1F70000 Series
Technical Manual
S1F78100Y Series
S1F78100Y2G0
IOPR–Ta
7.0
6.0
IOPR–VI
6.0
VDD=3V
5.0
5.0
3.0
2.0
2.0
Ta=25˚C
IO=0mA
1.0
1.0
0.0
–40
3.0
–20
0
20
40
Ta [˚C]
60
80
0.0
100
0
5
(VI–VO)–Ta
15
(VI–VO)–IO
2.0
0.9
1.8
VDD=1.75V
0.8
Ta=25˚C
VDD=1.75V
1.6
0.7
1.4
(VI–VO)[V]
(VO–VI)[V]
10
VI [V]
1.0
0.6
IO = –5mA
0.5
0.4
0.3
1.2
1.0
0.8
0.6
IO = –1mA
0.2
0.4
0.1
0.2
0.0
–40
S1F78100Y
Series
4.0
IOPR [µA]
IOPR [µA]
4.0
–20
S1F70000 Series
Technical Manual
0
20
40
Ta [˚C]
60
80
100
0.0
–10
EPSON
–8
–6
–4
IO [mA]
–2
0
3–17
S1F78100Y Series
VO–VI
VO–Ta
2.0
2.0
1.8
VDD=3V
1.6
IO = –10mA
1.4
VO [V]
VO [V]
1.2
1.0
0.8
IO = –30mA
0.6
Ta=25˚C
0.4
IO =–1mA
0.2
1.5
–40
0.0
–20
0
20
40
Ta [˚C]
60
80
0
100
∆VO–Ta
15
VO–IO
2.5
Ta=25˚C
VDD=3V
VDD=3V
–10mA≤10≤–1mA
3
VO [V]
∆VO [mV]
10
VI [V]
5
4
5
2.0
2
1
0
–40
3–18
–20
0
20
40
Ta [˚C]
60
80
100
EPSON
1.5
–10
–8
–6
–4
IO [mA]
–2
0
S1F70000 Series
Technical Manual
S1F78100Y Series
S1F78100Y2H0
IOPR–Ta
7.0
IOPR–VI
6.0
6.0
5.0
VDD=3V
5.0
3.0
2.0
2.0
Ta=25˚C
IO=0mA
1.0
1.0
0.0
–40
3.0
S1F78100Y
Series
4.0
IOPR [µA]
IOPR [µA]
4.0
–20
0
20
40
Ta [˚C]
60
80
0.0
100
0
5
(VO–VI)–Ta
1.2
10
15
VI [V]
(VO–VI)–IO
1.1
VDD=1.45V
1.0
1.0
0.9
0.8
0.7
IO=–3mV
(VI–VO)[V]
(VO–VI)[V]
0.8
0.6
0.4
0.6
0.5
0.4
0.3
IO = –1mV
Ta=25˚C
VDD=1.45V
0.2
0.2
0.1
0.0
–40
–20
S1F70000 Series
Technical Manual
0
20
40
Ta [˚C]
60
80
100
0.0
EPSON
–5
–4
–3
–2
IO [mA]
–1
0
3–19
S1F78100Y Series
VO–Ta
VO–VI
2.0
2.0
1.8
VDD=3V
IO=–1mA
1.6
1.2
VO [V]
VO [V]
1.4
1.5
1.0
IO = –30mA
0.8
0.6
0.4
IO = –10mA
0.2
1.0
–40
0.0
–20
0
20
40
Ta [˚C]
60
80
100
0
∆VO–Ta
1.8
VO [ V]
∆VO [mV]
3–20
Ta=25˚C
VDD=3V
1.6
2
1.4
1
1.2
0
20
40
Ta [˚C]
15
VO–IO
VDD=3V
1mA≤IO≤30mA
–20
10
2.0
3
0
–40
5
VI [V]
5
4
Ta=25˚C
60
80
100
EPSON
1.0
–10
–8
–6
–4
IO [mA]
–2
0
S1F70000 Series
Technical Manual
S1F79100Y Series
S1F79100Y Series CMOS Negative Voltage Regulators
S1F79100Y series voltage regulators provide stepdown and stabilization for an input voltage to a specified fixed voltage. The four devices in the series incorporate a precision, power-saving reference voltage generator, a transistorized differential amplifier and resistors for determining the output voltage.
The S1F79100Y series is available in 3-pin plastic
SOT89s.
FEATURES
• Ample lineup : 5 kinds are available in the range from
–1.5V to –5V.
• Small difference between input and output voltage :
Typ. 0.17V (IO=10mA, VO=–5.0V)
• Built-in highly stable reference voltage source : Typ.
–1.0V
• Small output voltage temperature coefficient : Typ. –
100ppm/˚C
• Wide operating voltage range : 15V Max.
APPLICATIONS
• Fixed-voltage power supplies for battery-operated
equipment such as portable video cassette recorders,
video cameras and radios
• Fixed-voltage power supplies for communications
equipment
• High-stability reference voltage generators
LINEUP
Voltage (V)
Output
Current consumption
(µA)
S1F79100Y1H0
–1.5
4.0
S1F79100Y1G0
–1.8
4.0
–3.0
4.0
S1F79100Y1P0
–4.0
4.0
S1F79100Y1B0
–5.0
4.0
Product
Input
S1F79100Y1D0
–15
Operating temperature
(°C)
–40 to +85
PIN ASSIGNMENTS
BLOCK DIAGRAM
GND
(2 pin)
VREF
VI
1
GND
2
VO
3
S1F79100Y
series
–
+
VI
(1 pin)
S1F70000 Series
Technical Manual
VO
(3 pin)
EPSON
3–21
S1F79100Y
Series
DESCRIPTION
S1F79100Y Series
PIN DESCRIPTIONS
Pin No.
Pin name
1
VI
2
GND
3
VO
Description
Input voltage
Ground
Output voltage
SPECIFICATIONS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VI–GND
–21
V
Output voltage
VO
GND + 0.3 to VI – 0.3
V
Output current
IO
100
mA
Power dissipation
PD
200
mW
Operating temperature range
Topr
–40 to +85
°C
Storage temperature range
Tstg
–65 to +150
°C
Soldering temperature (for 10 s). See note.
Tsol
260
°C
Input voltage
Note
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions. Never use
solder dip to mount S1F70000 series power supply devices.
Electrical Characteristics
S1F79100Y1H0
(Ta = –40°C to +85°C)
Parameter
Symbol
Conditions (GND = 0.0V)
Input voltage
VI
—
Output voltage
VO
Operating current
Input/output voltage
differential
Input voltage stabilization
ratio
Output voltage drift
3–22
VI = –3.0V, IO = 10mA
Ta = 25°C
Rating
Min. Typ. Max.
–15.0 —
—
–1.57 –1.50 –1.43
Unit
V
V
VI = –1.5V to –15V
—
4.0
18.0
µA
|VI – VO|
VI = –1.5V, IO = 5mA
—
0.25
0.60
V
∆VO
∆VI • VO
VI = –3.0V to –15.0V,
IO = 5mA
—
0.10
—
%/V
VI = –3.0V,
IO = 1mA to 5mA
—
20.0
—
mV
IOPR
∆VO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
S1F79100Y1G0
(VDD = 0V, Ta = –40°C to +85°C unless otherwise noted)
Symbol
Conditions
Input voltage
VI
—
Output voltage
VO
Operating current
Input/output voltage
differential
Input voltage stabilization
ratio
Output voltage drift
VI = –3.0V, IO = 10mA
Ta = 25°C
Rating
Min. Typ.
–15.0 —
Max.
—
–1.87 –1.80 –1.73
Unit
V
V
VI = –1.8V to –15.0V
—
4.0
18.0
µA
|VI – VO|
VI = –1.8V, IO = 10mA
—
0.35
0.70
V
∆VO
∆VI • VO
VI = –3.0V to –15.0V,
IO = 10mA, Isothermal
—
0.10
—
%/V
VI = –3.0V,
IO = 1mA to 10mA, Isothermal
—
20.0
—
mV
IOPR
∆VO
S1F79100Y1D0
Parameter
Symbol
Input voltage
VI
Output voltage
VO
Operating current
Input/output voltage
differential
Input voltage stabilization
ratio
Output voltage drift
S1F70000 Series
Technical Manual
(VDD = 0V, Ta = –40°C to +85°C unless otherwise noted)
Rating
Conditions
Unit
Min. Typ. Max.
—
–15.0 —
—
V
VI = –5.0V, IO = 10mA
Ta = 25°C
–3.07 –3.00 –2.93
V
VI = –3.0V to –15.0V
—
4.0
18.0
µA
|VI – VO|
VI = –3.0V, IO = 10mA
—
0.23
0.46
V
∆VO
∆VI • VO
VI = –4.0V to –15.0V,
IO = 10mA, Isothermal
—
0.10
—
%/V
VI = –5.0V,
IO = 1mA to 30mA
—
30.0
—
mV
IOPR
∆VO
EPSON
3–23
S1F79100Y
Series
Parameter
S1F79100Y Series
S1F79100Y1P0
Parameter
Symbol
Input voltage
VI
Output voltage
VO
Operating current
IOPR
(VDD = 0V, Ta = –40°C to +85°C unless otherwise noted)
Rating
Conditions
Unit
Min. Typ. Max.
—
–15.0 —
—
V
VI = –6.0V, IO = 10mA
–4.10 –4.00 –3.90
V
Ta = 25°C
VI = –4.0V to –15.0V
—
4.0
18.0
µA
—
0.19
0.38
V
—
0.10
—
%/V
—
40.0
—
mV
Input/output voltage
differential
|VI – VO|
VI = –4.0V, IO = 10mA
Input voltage stabilization
ratio
∆VO
∆VI • VO
VI = –5.0V to –15V,
IO = 10mA, Isothermal
VI = –7V,
IO = 1mA to 30mA
Output voltage drift
∆VO
S1F79100Y1B0
(VDD = 0V, Ta = –40°C to +85°C unless otherwise noted)
Parameter
Symbol
Conditions
Input voltage
VI
—
Output voltage
VO
Operating current
Input/output voltage
differential
Input voltage stabilization
ratio
Output voltage drift
3–24
VI = –7.0V, IO = 10mA
Ta = 25°C
Rating
Min. Typ. Max.
–15.0 —
—
–5.10 –5.00 –4.90
Unit
V
V
VI = –5.0V to –15.0V
—
4.0
18.0
µA
|VI – VO|
VI = –5.0V, IO = 10mA
—
0.17
0.34
V
∆VO
∆VI • VO
VI = –6.0V to –15.0V,
IO = 10mA, Isothermal
—
0.10
—
%/V
VI = –7.0V,
IO = 1mA to 50mA
—
50.0
—
mV
IOPR
∆VO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
Typical Performance Characteristics
S1F79100Y1B0
6.0
7.0
6.0
5.0
5.0
4.0
IOPR [µA]
IOPR [µA]
Ta = 25˚C
IO = 0mA
VI = 7V
4.0
3.0
3.0
2.0
1.0
1.0
0.0
–40 –20
0.0
0
20
40
60
80
0
100
–5
–10
Ta [˚C]
VI [V]
IOPR vs. Ta
IOPR vs. VI
1.2
–15
0.8
VI = 4.9V
Ta = 25˚C
VI = –4.9V
0.7
1.0
0.6
IO = 50mA
|VI–VO| [V]
|VO–VI| [V]
0.8
0.6
0.4
0.5
0.4
0.3
0.2
0.2
IO = 10mA
0.0
–40 –20
0.1
0.0
0
20
40
60
80
100
0
20
30
40
50
IO [mA]
Ta [˚C]
|VO – VI| vs. Ta
S1F70000 Series
Technical Manual
10
|VI – VO| vs. IO
EPSON
3–25
S1F79100Y
Series
2.0
S1F79100Y Series
–6.0
–5.5
VI = –7V
IO = 10mA
IO = 10mA
–5.0
VO [V]
VO [V]
–4.0
–5.0
–3.0
–2.0
IO = 50mA
–1.0
Ta = 25˚C
–4.5
–40 –20
0.0
0
20
40
60
80
100
0
–5
Ta [˚C]
–10
–15
VI [V]
VO vs. Ta
VO vs. VI
–5.5
40
Ta = 25˚C
VI = –7V
VI = –7V
1mA ≤ IO ≤ 50mA
VO [V]
∆VO [mV]
30
20
–5.0
10
0
–40 –20
–4.5
0
20
40
60
80
100
Ta [˚C]
10
20
30
40
50
IO [mA]
∆VO vs. Ta
3–26
0
VO vs. IO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
S1F79100Y1P0
6.0
7.0
6.0
5.0
5.0
4.0
IOPR [µA]
IOPR [µA]
Ta = 25˚C
IO = 0mA
VI = –7V
4.0
3.0
3.0
2.0
2.0
0.0
–40 –20
0.0
0
20
40
60
80
100
0
–5
–10
Ta [˚C]
VI [V]
IOPR vs. Ta
IOPR vs. VI
1.2
–15
0.8
VI = –3.9V
Ta = 25˚C
VI = –3.9V
0.7
1.0
0.6
|VI–VO| [V]
|VO–VI| [V]
0.8
0.6
IO = 30mA
0.4
0.5
0.4
0.3
0.2
0.2 IO = 10mA
0.0
–40 –20
0.1
0.0
0
20
40
60
80
100
8
16
24
32
40
IO [mA]
Ta [˚C]
|VO – VI| vs. Ta
S1F70000 Series
Technical Manual
0
|VI – VO| vs. IO
EPSON
3–27
S1F79100Y
Series
1.0
1.0
S1F79100Y Series
–6.0
–4.5
VI = –7V
IO = 10mA
–5.0
IO = 10mA
VO [V]
VO [V]
–4.0
–4.0
–3.0
–2.0
–1.0
–3.5
–40 –20
IO = 50mA
0
20
40
60
80
100
Ta = 25˚C
IO = 30mA
0.0
0
–5
Ta [˚C]
–10
–15
VI [V]
VO vs. Ta
VO vs. VI
–4.5
40
VI = –7V
1mA ≤ IO ≤ 30mA
Ta = 25˚C
VI = –7V
VO [V]
∆VO [mV]
30
20
–4.0
10
0
–40 –20
–3.5
0
20
40
60
80
100
Ta [˚C]
8
16
24
32
40
IO [mA]
∆VO vs. Ta
3–28
0
VO vs.IO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
S1F79100Y1D0
6.0
7.0
6.0
5.0
5.0
4.0
IOPR [µA]
IOPR [µA]
Ta = 25˚C
IO = 0mA
VI = –5V
4.0
3.0
3.0
2.0
2.0
0.0
–40 –20
0.0
0
20
40
60
80
100
0
–5
–10
Ta [˚C]
VI [V]
IOPR vs. Ta
IOPR vs. VI
1.2
–15
0.8
VI = –2.93V
Ta = 25˚C
VI = –2.93V
0.7
1.0
0.6
|VI–VO| [V]
|VO–VI| [V]
0.8
IO = 30mA
0.6
0.4
0.5
0.4
0.3
0.2
0.2 IO = 10mA
0.1
0.0
–40 –20
0.0
0
20
40
60
80
100
0
Ta [˚C]
12
18
24
30
IO [mA]
|VO – VI| vs. Ta
S1F70000 Series
Technical Manual
6
|VI – VO| vs. IO
EPSON
3–29
S1F79100Y
Series
1.0
1.0
S1F79100Y Series
–3.5
–6.0
VI = –5V
IO = 10mA
–5.0
VO [V]
VO [V]
–4.0
–3.0
IO = 10mA
–3.0
–2.0
–1.0
IO = 30mA
–2.5
–40 –20
Ta = 25˚C
0.0
0
20
40
60
80
0
100
–5
–10
–15
VI [V]
Ta [˚C]
VO vs. Ta
VO vs. VI
–3.5
40
VI = –5V
1mA ≤ IO ≤ 30mA
Ta = 25˚C
VI = –5V
VO [V]
∆VO [mV]
30
20
–3.0
10
0
–40 –20
–2.5
0
20
40
60
80
100
6
12
18
24
30
IO [mA]
Ta [˚C]
∆VO vs. Ta
3–30
0
VO vs. IO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
S1F79100Y1G0
6.0
7.0
5.0
4.0
IOPR [µA]
IOPR [µA]
Ta = 25˚C
IO = 0mA
5.0
4.0
3.0
3.0
2.0
2.0
1.0
1.0
0.0
–40 –20
0.0
0
20
40
60
80
100
0
–5
–10
Ta [˚C]
VI [V]
IOPR vs. Ta
IOPR vs. VI
1.2
–15
0.8
VI = –1.75V
Ta = 25˚C
VI = –1.75V
0.7
1.0
0.6
|VI–VO| [V]
|VO–VI| [V]
0.8
0.6
0.4
0.0
0
20
40
60
80
100
0
2
4
6
8
10
IO [mA]
Ta [˚C]
|VO – VI| vs. Ta
S1F70000 Series
Technical Manual
0.3
0.1
IO = 1mA
0.0
–40 –20
0.4
0.2
IO = 5mA
0.2
0.5
|VI – VO| vs. IO
EPSON
3–31
S1F79100Y
Series
6.0
VI = –3V
S1F79100Y Series
–2.5
–6.0
VI = –3V
IO = 1mA
–5.0
VO [V]
VO [V]
–4.0
–2.0
–3.0
IO = 10mA
–2.0
–1.0
IO = 50mA
Ta = 25˚C
IO = 30mA
–1.5
–40 –20
0.0
0
20
40
60
80
100
0
–5
–10
Ta [˚C]
–15
VI [V]
VO vs. Ta
VO vs. VI
–2.5
40
VI = –3V
1mA ≤ IO ≤ 10mA
Ta = 25˚C
VI = –3V
VO [V]
∆VO [mV]
30
20
–2.0
10
0
–40 –20
0
20
40
60
80
100
Ta [˚C]
0
2
4
6
8
10
IO [mA]
∆VO vs. Ta
3–32
–1.5
VO vs. IO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
S1F79100Y1H0
6.0
7.0
Ta = 25˚C
IO = 0mA
VI = –3V
6.0
5.0
4.0
IOPR [µA]
4.0
3.0
3.0
2.0
2.0
1.0
1.0
0.0
–40 –20
0.0
0
20
40
60
80
100
0
–5
–10
Ta [˚C]
VI [V]
IOPR vs. Ta
IOPR vs. VI
1.2
–15
0.8
VI = –1.45V
Ta = 25˚C
VI = –1.45V
0.7
1.0
0.6
|VI–VO| [V]
|VO–VI| [V]
0.8
0.6
0.4
IO = 5mA
0.3
0.1
IO = 1mA
0.0
0
20
40
60
80
100
0
2
4
6
8
10
IO [mA]
Ta [˚C]
|VO – VI| vs. Ta
S1F70000 Series
Technical Manual
0.4
0.2
0.2
0.0
–40 –20
0.5
|VI – VO| vs. IO
EPSON
3–33
S1F79100Y
Series
IOPR [µA]
5.0
S1F79100Y Series
–6.0
–2.0
VI = –3V
IO = 1mA
–5.0
VO [V]
VO [V]
–4.0
–1.5
–3.0
–2.0
IO = 1mA
–1.0
–1.0
–40 –20
IO = 30mA
Ta = 25˚C
IO = 10mA
0.0
0
20
40
60
80
0
100
–5
–10
–15
VI [V]
Ta [˚C]
VO vs. Ta
VO vs. VI
–2.0
40
VI = –3V
1mA ≤ IO ≤ 10mA
Ta = 25˚C
VI = –3V
VO [V]
∆VO [mV]
30
20
–1.5
10
0
–40 –20
–1.0
0
20
40
60
80
100
Ta [˚C]
2
4
6
8
10
IO [mA]
∆VO vs. Ta
3–34
0
VO vs. IO
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
PACKAGE MARKINGS
Parameter
Output voltage code
Voltage regulator code
Code
Description
B
5V
D
3V
P
Positive
N
Negative
Marking locations
Note
The reflow furnace temperature profile requirements
must be satisfied during package reflow. Avoid soldering on surface mount package (including SOT89) as it
causes a quick temperature change of package and a
device damage.
Output voltage
code
Voltage regulator
code
FUNCTIONAL DESCRIPTIONS
Basic Operation
The S1F79100Y series uses a 3-pin series regulator
feedback loop. An operational amplifier compares
VREG from the voltage divider formed by R 1 and R2,
with VREF . The amplifier output adjusts the output
transistor gate bias to equalize the voltages and compensate for fluctuations in VI.
Internal Circuits
Reference voltage generator
The offset structure used in all three transistors results
in a high breakdown voltage that ensures a stable reference voltage output over a wide range of input voltages.
VSS
Enhancement
mode
VREF
GND
Depletion
mode
VREF
R1
–
+
Depletion
mode
VREG
R2
VI
VO
V1
The following equation shows the relationship between
VO and VREF.
R 1 + R2
VO = ————— VREF
R1
S1F70000 Series
Technical Manual
EPSON
3–35
S1F79100Y
Series
The markings on S1F79100Y series device packages
use the following abbreviations.
S1F79100Y Series
Differential amplifier
The built-in differential amplifier generates a potential
at point X that adjusts the gate bias of the output transistor if there is any difference betweeen VREF and VREG.
VSS
Output transistor
The output side of the p-channel MOS transistors in the
output transistor circuit is connected to the voltage divider resistors in the feedback loop.
VSS
R1
VREF
VREF
P1
VREG
VREG
P2
R2
To output
transistor
X
VO
+
–
N1
N2
V1
VI
TYPICAL APPLICATIONS
Current Booster
At the cost of a small increase in current consumption,
the voltage is regulated while maintaining high current
output.
The following equation shows the relationship between
the old and new voltages.
R 1 + R2
VO = ————— VR
R2
VSS
Note that the application must supply a bias current, IB,
high enough to offset the increase in voltage across R1
due to IOPR.
An alternative circuit for raising the output voltage is
shown in the following figure.
GND
VI
S1F79100Y
VO
VSS
VI
VO
External Voltage Converter
The following circuit raises the output voltage of a
S1F79100Y series IC.
ISS
CI
CO
R1
GND
VI
VI
S1F79100Y
VO
VO
VSS
R1
IOPR
IB
GND
VI
VI
3–36
S1F79100Y
Vr
VO
R2
VO
This configuration, however, introduces two design
problems.
1. It reduces the output voltage by VF, the forward voltage drop across the diode.
2. It is sensitive to fluctuations in VF due to differences
in diodes, operating temperatures and ISS.
EPSON
S1F70000 Series
Technical Manual
S1F79100Y Series
R1 helps reduce the affect of I SS on V F. It is also required when ISS is lower than the diode bias current.
For certain input voltages, a Zener diode with the reverse polarity can be used.
Switching Output
S1F79100Y series devices are designed for continuous
operation. An external switching circuit allows the
regulated output to be switched ON and OFF.
High Input Voltages
A preliminary regulator circuit is required to bring the
input voltage within the S1F79100Y series rated range.
VSS
ON/OFF
control signal
VSS
VI
S1F79100Y
VO
VO
GND
VI
S1F70000 Series
Technical Manual
VI
S1F79100Y
VO
VO
Note) Temperatures during reflow soldering must remain within the limits set out under LSI Device
Precautions in this catalog. Do not immerse
QFP and SOT89 packages during soldering, as
the rapid temperature gradient during dipping
can cause damage.
EPSON
3–37
S1F79100Y
Series
GND
VI
4. DC/DC Switching Regulators
S1F76300 Series
The S1F76300 series of CMOS switching regulators
comprises nine series—the S1F76310, S1F76380 series
featuring built-in RC oscillators, the S1F76330 series
requiring external crystal oscillators.
S1F76310, S1F76380 Series Built-in CR Oscillator Type
CMOS Switching Regulators
The S1F76310, S1F76380 series of CMOS switching
regulators provide input voltage step-up and regulation
to a specified fixed voltage using an external coil. The
devices in these series incorporate precision, low-power
reference voltage generators and transistors for driving
an internal comparator. They feature low power consumption, low operating voltages, voltage detection and
standby operation.
The devices offer a range of fixed output voltages, from
2.0 to 5.0V. The S1F76310 series features battery
backup and power-on clear, the S1F76380 series features power-on clear and response compensation, the
S1F76380 series offer an output voltage temperature
characteristic for driving an LCD. They are available in
SOP3-8pin.
APPLICATIONS
• Fixed-voltage power supplies for battery-operated
equipment such as portable video cassette recorders,
video cameras and radios
• Power supplies for pagers, memory cards, calculators
and similar hand-held equipment
• Fixed-voltage power supplies for medical equipment
• Fixed-voltage power supplies for communications
equipment
• Power supplies for microcomputers
• Uninterruptable power supplies
• Power supplies for LCD panel
S1F76300
Series
DESCRIPTION
FEATURES
•
•
•
•
•
•
•
•
0.9V (Min.) operating voltage
10µA (Typ.) maximum current consumption
Standby operation
3µA (Typ.) standby current consumption
1.05 ±0.05V high-accuracy voltage detection
Battery backup (available on S1F76310 series)
On-chip CR oscillator
Power-on clear (available on S1F76310 and
S1F76380 series)
• Output voltage temperature characteristic for driving
an LCD (available on S1F76380 series)
• SOP3-8pin
LINEUP
Voltage
(V)
Product
Multiplication
frequency
source
Input
Output
1.5
3.5
On-chip CR
S1F76310M1B0 (0.9 Min.)
3.0
oscillator
S1F76310M1L0
2.4
S1F76310M1A0
S1F76310M1K0
S1F76380M1L0
Power-on clear Battery backup
Response
compensation
Output voltage
temperature
characteristic
5.0
1.5
S1F76380M1H0 (0.9 Min.)
S1F70000 Series
Technical Manual
Voltage
detection
Package
SOP3-8pin
2.4
On-chip CR
2.2
oscillator
Yes
Yes
No
Yes
SOP3-8pin
SOP3-8pin
SOP3-8pin
No
EPSON
No
Yes
– 4.0 mV/˚C SOP3-8pin
– 4.5 mV/˚C SOP3-8pin
4–1
S1F76300 Series
BLOCK DIAGRAMS
S1F76310 Series
RST
PWCR
VI2
VI1
VSW
Reference
voltage
generator
CR
oscillator
VO
Control
switch
GND
PS
S1F76380 Series
RST
PWCR
VI
VSW
–
+
VO
–
+
Reference
voltage
generator
Control
switch
VCONT
GND
CR
oscillator
PS
4–2
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
PIN ASSIGNMENTS
S1F76310 Series
PWCR
1
RST
2
GND
3
VSW
4
S1F76380 Series
S1F76310
series
8
PS
PWCR
1
7
VI1
RST
2
6
VI2
GND
3
5
VO
VSW
4
S1F76380
series
8
PS
7
VI
6
VCONT
5
VO
PIN DESCRIPTIONS
S1F76310 Series
Pin No.
Pin name
Description
1
PWCR
2
RST
Reset signal output. See note 1.
3
GND
Ground
4
VSW
External inductor drive
5
VO
Output votlage
6
VI2
Backup input voltage
7
VI1
Step-up input voltage
8
PS
Power save. See note 2.
S1F76300
Series
Power-on clear. See note 1.
Notes
1. See voltage detection and power-on clear in the functional description.
2. See standby mode and battery backup in the functional description.
S1F76380 Series
Pin No.
Pin name
Description
1
PWCR
2
RST
Reset signal output. See note 1.
3
GND
Ground
4
VSW
External inductor drive
5
VO
Output votlage
6
VCONT
7
VI1
Step-up input voltage
8
PS
Power save. See note 2.
Power-on clear. See note 1.
Comparator input
Notes
1. See voltage detection and power-on clear in the functional description.
2. See standby mode and battery backup in the functional description.
S1F70000 Series
Technical Manual
EPSON
4–3
S1F76300 Series
SPECIFICATIONS
Absolute Maximum Ratings
S1F76310 series
Parameter
VSS = 0V, Ta = 25 ˚C
Symbol
Rating
Unit
Input voltage
VI1
7
V
Output current
IO
100
mA
Output voltage
VO
7
V
Power dissipation
PD
200 (SOP3)
300 (DIP)
mW
Operating temperature range
Topr
–30 to +85
˚C
Storage temperature range
Tstg
–65 to +150
˚C
Soldering temperature (for 10 s). See note.
Tsol
260
˚C
Notes
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions. Never use solder dip to
mount S1F70000 series power supply devices.
S1F76380 series
Parameter
VSS = 0V, Ta = 25 ˚C
Symbol
Rating
Unit
Input voltage
VI1
7
V
Output current
IO
100
mA
Output voltage
VO
7
V
Power dissipation
PD
200 (SOP3)
300 (DIP)
mW
Operating temperature range
Topr
–30 to +85
˚C
Storage temperature range
Tstg
–65 to +150
˚C
Soldering temperature (for 10 s). See note.
Tsol
260
˚C
Notes
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions. Never use solder dip to
mount S1F70000 series power supply devices.
4–4
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Electrical Characteristics
S1F76310M1L0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Symbol
Output voltage
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
VI1
VI2
VO
VDET
∆VDET
IDDO
IDDS
Switching transistor ON resistance
RSWON
Switching transistor leakage current
ISWQ
Input voltage
Backup switch ON resistance
RBSON
Backup switching leakage current
IBSQ
RST Low-level output current
PS pull-up current
Multiplication clock frequency
IOL
IIH
fCLK
Condition
VO > VI2
Vl1 = 1.5V
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
VI1 = 1.5V, VO = 2.4V,
VSW = 0.2V
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
VI1 = 1.0V, VI2 = 1.5V,
IO = 1.0mA
VI1 = 1.0V, VO = 2.4V,
VI2 = 2.0V
VI1 = 0.9V, VDS = 0.2V
VI1 = 1.5V
VI1 = 1.5V
Min.
0.9
0.9
2.32
1.00
—
—
—
Rating
Typ. Max.
—
1.8
—
1.8
2.40
2.48
1.05
1.10
5
—
7
35
3
10
Unit
V
V
V
V
%
µA
µA
—
7
14
Ω
—
—
0.5
µA
—
100
250
Ω
—
—
0.1
µA
0.05
—
25
0.15
—
35
—
0.5
45
mA
µA
kHz
S1F76310M1B0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter
Input voltage
Output voltage
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
Symbol
VI1
VI2
VO
VO > VI2
Rating
Typ. Max.
—
2.0
Unit
V
—
3.00
2.0
3.10
VDET
1.00
1.05
1.10
V
∆VDET
IDDO
—
—
5
8
—
40
%
µA
—
3
10
µA
—
6
12
Ω
—
—
0.5
µA
—
70
160
Ω
—
—
0.1
µA
0.05
—
0.15
—
—
0.5
mA
µA
30
40
50
kHz
IDDS
RSWON
Switching transistor leakage current
ISWQ
RBSON
Vl1 = 1.5V
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
VI1 = 1.5V, VO = 3.0V,
VSW = 0.2V
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
VI1 = 1.0V, VI2 = 2.0V,
IO = 1.0mA
VI1 = 1.0V, VO = 3.0V,
VI2 = 2.0V
Backup switching leakage current
IBSQ
RST Low-level output current
PS pull-up current
IOL
IIH
VI1 = 0.9V, VDS = 0.2V
VI1 = 1.5V
Multiplication clock frequency
fCLK
VI1 = 1.5V
S1F70000 Series
Technical Manual
Min.
0.9
0.9
2.90
Switching transistor ON resistance
Backup switch ON resistance
Condition
EPSON
V
V
4–5
S1F76300
Series
Parameter
S1F76300 Series
S1F76310M1K0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter
Symbol
VI1
VI2
Input voltage
Output voltage
Detection voltage
VO
V DET
Detection voltage hysteresis ratio
∆VDET
Operating current
Standby current
IDDO
IDDS
Switching transistor ON resistance
R SWON
Switching transistor leakage current
ISWQ
Backup switch ON resistance
Backup switching leakage current
R BSON
IBSQ
RST Low-level output current
IOL
PS pullup current
Multiplication clock frequency
fCLK
IIH
Condition
V O > V I2
V l1 = 1.5V
Rating
Min.
Typ. Max.
0.9
—
2.0
0.9
—
2.0
3.40
1.00
V I1 = 1.5V, IO = 1.0mA
V I1 = 1.5V
V I1 = 1.5V, V O = 3.5V,
V SW = 0.2V
V I1 = 1.5V, V O = 1.5V,
V SW = 7.0V
V I1 = 1.0V, V I2 = 2.0V,
I O = 1.0mA
V I1 = 1.0V, V O = 3.5V,
V I2 = 2.0V
V I1 = 0.9V, V DS = 0.2V
V I1 = 1.5V
V I1 = 1.5V
3.50
1.05
3.60
1.10
Unit
V
V
V
V
—
5
—
%
—
—
8
3
40
10
µA
µA
—
6
12
Ω
—
—
0.5
µA
—
70
160
Ω
—
—
0.1
µA
0.05
0.15
—
mA
—
30
—
40
0.5
50
µA
kHz
S1F76310M1A0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter
Symbol
Output voltage
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
VI1
VI2
VO
V DET
∆VDET
IDDO
IDDS
Switching transistor ON resistance
R SWON
Switching transistor leakage current
ISWQ
Input voltage
Backup switch ON resistance
Backup switching leakage current
RST Low-level output current
PS pullup current
Multiplication clock frequency
4–6
R BSON
IBSQ
IOL
IIH
fCLK
Condition
V O > V I2
V l1 = 1.5V
V I1 = 1.5V, IO = 1.0mA
V I1 = 1.5V
V I1 = 1.5V, V O = 5.0V,
V SW = 0.2V
V I1 = 1.5V, V O = 1.5V,
V SW = 7.0V
V I1 = 1.0V, V I2 = 3.0V,
I O = 1.0mA
V I1 = 1.0V, V O = 5.0V,
V I2 = 3.0V
V I1 = 0.9V, V DS = 0.2V
V I1 = 1.5V
V I1 = 1.5V
EPSON
Min.
0.9
0.9
4.80
1.00
—
—
—
Rating
Typ. Max.
—
2.0
—
2.0
5.00
5.20
1.05
1.10
5
—
10
50
3
10
Unit
V
V
V
V
%
µA
µA
—
5
10
Ω
—
—
0.5
µA
—
50
100
Ω
—
—
0.1
µA
0.05
—
35
0.15
—
45
—
0.5
55
mA
µA
kHz
S1F70000 Series
Technical Manual
S1F76300 Series
S1F76380M1H0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Input voltage
Output voltage
Output voltage temperature gradient
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
Symbol
VI1
VO
Condition
Vl1 = 1.5V
Kt
VDET
–5.5
1.00
∆VDET
IDDO
IDDS
Switching transistor ON resistance
RSWON
Switching transistor leakage current
ISWQ
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
VI1 = 1.5V, VO = 2.2V,
VSW = 0.2V
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
RST Low-level output current
IOL
VI1 = 0.9V, VOL = 0.2V
PS pullup current
Multiplication clock frequency
IIH
VI1 = 1.5V
VI1 = 1.5V
fCLK
Rating
Min.
Typ. Max.
0.9
—
2.0
2.10
2.20
2.30
–4.5
1.05
–3.5
1.10
Unit
V
V
mV/˚C
V
—
5
—
%
—
—
7
3
35
10
µA
µA
—
7
14
Ω
—
—
0.5
µA
0.05
0.15
—
mA
—
25
—
35
0.5
45
µA
kHz
S1F76380M1L0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter
Symbol
Input voltage
VI1
Output voltage
Output voltage temperature gradient
VO
Kt
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
Condition
Vl1 = 1.5V
VDET
∆VDET
IDDO
IDDS
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
VI1 = 1.5V, VO = 2.4V,
VSW = 0.2V
Rating
Min.
Typ. Max.
0.9
—
2.0
Unit
V
2.30
–5.5
2.40
–4.0
2.50
–3.5
V
mV/˚C
1.00
1.05
1.10
V
—
—
5
7
—
35
%
µA
—
3
10
µA
—
7
14
Ω
Switching transistor ON resistance
RSWON
Switching transistor leakage current
ISWQ
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
—
—
0.5
µA
RST Low-level output current
PS pullup current
IOL
IIH
VI1 = 0.9V, VOL = 0.2V
VI1 = 1.5V
0.05
—
0.15
—
—
0.5
mA
µA
Multiplication clock frequency
fCLK
VI1 = 1.5V
25
35
45
kHz
S1F70000 Series
Technical Manual
EPSON
4–7
S1F76300
Series
Parameter
S1F76300 Series
Typical Performance Characteristics
5
Ta = 25 ˚C
VI1 = 1.5 V
Standby current (µA)
Fixed output voltage temperature
characteristic (mV/ ˚C)
2.0
1.5
1.0
0.5
4
3
2
1
0.0
0
1
2
3
4
5
0
–30
6
Fixed output voltage (V)
0
25
50
75
85
Ambient temperature (˚C)
Fixed-output voltage temperature
characteristic
Standby current vs. ambient temperature
1.15
Detection voltage (V)
VREL
1.10
VDET
1.05
1.00
0.95
–30
0
25
50
75
85
Ambient temperature (˚C)
Detection voltage vs. ambient temperature
S1F76380M1H0 and S1F76380M1L0
60
60
VI1 = 1.5 V
Clock frequency (kHz)
Clock frequency (kHz)
Ta = 25 ˚C
50
40
30
20
10
0.5
1.0
1.5
2.0
4–8
40
30
20
10
–30
2.5
0
25
50
85
Ambient temperature (˚C)
Input voltage (V)
Clock frequency vs. Input voltage
50
Clock frequency vs. ambient temperature
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Output Voltage (V)
Output Voltage (V)
2.5
2.0
2.5
2.0
1.5
–30
0
25
50
75
–30
85
0
25
50
75
85
Ambient temperature (˚C)
Ambient temperature (˚C)
Output voltage vs. ambient temperature
(S1F76380M1H0)
Output voltage vs. ambient temperature
(S1F76380M1L0)
S1F76310M1B0, S1F76310M1K0
60
50
40
30
20
10
0.5
1.0
1.5
2.0
VI1 = 1.5 V
50
S1F76300
Series
Ta = 25 ˚C
Clock frequency (kHz)
Clock frequency (kHz)
60
40
30
20
10
–30
2.5
Input voltage (V)
0
25
50
85
Ambient temperature (˚C)
Clock frequency vs. input voltage
Clock frequency vs. ambient temperature
S1F76310M1A0
60
60
Clock frequency (kHz)
Ta = 25 ˚C
Clock frequency (kHz)
50
40
30
20
10
0.5
1.0
1.5
2.0
S1F70000 Series
Technical Manual
50
40
30
20
10
–30
2.5
0
25
50
85
Ambient temperature (˚C)
Input voltage (V)
Clock frequency vs. input voltage
VI1 = 1.5 V
Clock frequency vs. ambient temperature
EPSON
4–9
S1F76300 Series
Load Characteristics
S1F76310M1A0
10
Maximum load current (mA)
Ta = 25 ˚C
fCLK = 32 kHz
Output voltage (V)
5.0
4.5
VI1 = 1.5 V
VI1 = 1.0 V VI1 = 1.25 V
4.0
3.5
3.0
2.5
0
5
100
Ta = 25 ˚C
fCLK = 32 kHz
Peff
ILmax
0
100
10
50
5
Load efficiency (%)
5.5
0
200
Load current (mA)
300
500
1000
Inductence (µH)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
S1F76310M1B0
4.0
12
Maximum load current (mA)
Output voltage (V)
3.5
3.0
2.5
VI1 = 1.5 V
VI1 = 1.25 V
VI1 = 1.0 V
2.0
1.5
0
5
10
15
Load current (mA)
20
25
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
4–10
10
Peff
8
6
50
ILmax
4
2
0
1.0
100
Ta = 25 ˚C
fCLK = 32 kHz
Load efficiency (%)
fCLK = 32.8 kHz
100
200
300
500
1000
0
Inductance (µH)
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
S1F76380M1L0
4.0
15
3.0
2.5
2.0
VI = 1.0 VV = 1.25 VV = 1.5 V
1.5
1.0
Ta = 25 ˚C
fCLK = 40 kHz
ILmax
10
Peff
50
5
0
0
10
5
15
20
25
100
200
300
500
1000
0
Inductance (µH)
Load current (mA)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
100
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
S1F76380M1H0
15
ILmax
Maximum load current (mA)
fCLK = 35 kHz
Output voltage (V)
3.5
3.0
2.5
2.0
VI1 = 1.0 V VI1 = 1.25 V
VI1 = 1.5 V
1.5
1.0
0
5
10
15
20
S1F70000 Series
Technical Manual
Peff
50
5
200
300
500
1000
0
Inductance (µH)
Load current (mA)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
100
10
100
25
Ta = 25 ˚C
fCLK = 35kHz
Load efficiency (%)
4.0
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
EPSON
4–11
S1F76300
Series
Output voltage (V)
3.5
Load efficiency (%)
Maximum load current (mA)
fCLK = 35 kHz
S1F76300 Series
Reset delays
S1F76310M1A0
S1F76310M1K0
200
150
150
tpd (msec)
tpd (msec)
R = 200 kΩ
200
100
R = 200 kΩ
100
50
50
R = 100 kΩ
0
0.1
0.2
0.3
0.4
0.5 0.6 0.7 0.8
R = 100 kΩ
0
0.1
1.0
0.2
C (µF)
0.3
0.4
0.5 0.6 0.7 0.8
1.0
C (µF)
S1F76310M1B0
S1F76310M1L0 and S1F76380M1L0
200
200
R = 200 kΩ
R = 200 kΩ
150
tpd (msec)
tpd (msec)
150
100
100
50
50
R = 100 kΩ
R = 100 kΩ
0
0.1
0.2
0.3
0.4
0.5 0.6 0.7 0.8
0
0.1
1.0
C (µF)
0.2
0.3
0.4
0.5 0.6 0.7 0.8
1.0
C (µF)
S1F76380M1H0
200
R = 200 kΩ
tpd (msec)
150
100
50
R = 100 kΩ
0
0.1
0.2
0.3
0.4
0.5 0.6 0.7 0.8
1.0
C (µF)
4–12
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Timing diagram
Measurement circuit
VO
VO
VI1
R
100 kΩ
PWCR
RST
C
PWCR
RST
tpd
PACKAGE MARKINGS
7631
S1F76300
Series
S1F76310, S1F76380 series device packages use the
following markings.
Series number
First subcode character
Second subcode character
Code number
FUNCTIONAL DESCRIPTIONS
Basic Voltage Booster Operation
Tr1 switches ON and OFF at half the frequency of the
clock pulses from the built-in RC oscillator. When the
transistor is ON, the circuit stores energy in L. When it
is off, this energy flows through D to change C.
VI1
L
D
Tr1
VO
C
Internal Circuits
CR oscillator
The S1F76310, S1F76380 series use a built-in CR oscillator to drive the voltage booster circuit. The circuit
is supplied by VI1. All circuit components are on-chip
and thus the drive frequency is set internally. To ensure
50% duty, this frequency is twice that used by the voltage booster circuit.
When PS is Low, the oscillator is disabled and the chip
is in standby mode.
PS
GND
GND
C
R
S1F70000 Series
Technical Manual
EPSON
4–13
S1F76300 Series
Reference voltage generator and output
voltage regulator
S1F76310M
The reference voltage generator regulates VI1 to generate a votlage for the voltage regulator and voltage detection circuits.
The voltage regulator regulates the boosted output
votlage. This is determined by the level at point A between the two resistors connecting VO and GND. These
series use an on-chip resistor to set the output at a specified voltage.
Reference
voltage
generator
VO
Voltage
detector
R2
RST
Tr2
VO
VO
VI1
R1
PWCR
–
+
Tr1
C1
Output
voltage regulator
VI1
VSW
CR
oscillator
VO
A
+
–
GND
Note
In step-up voltage operation, the ripple voltage created
by the switching operation is large relative to the output
voltage described above. This ripple voltage is affected
by external components and load conditions. The user
is advised to check this voltage carefully.
VO returns to its normal value when the voltage of
PWCR increases and Tr2 turns OFF, so that RST returns to VO after a delay specified by the time coefficient of R1 and C1. Thus, after normal output has been
obtained, a reset pulse of adjustable width can be obtained which can reset a system connected to RST.
The output from RST is an N-channel, open-drain.
When VI1 exceeds VDET, the drain is opened and, when
VI1 drops below VDET again, the output transistor conducts and the output is grounded. The characteristic response is shown in the following figure.
VREL
VI1
VDET
VO
PWCR
VGND
VO
Voltage detection
RST
The S1F76310, S1F76380 series are equipped with a
built-in voltage detection function. The detection voltage, VDET, is fixed internally at 1.05 ± 0.05V.
Power-on clear function
The S1F76310 series and S1F76380 series are equipped
with a built-in power-on clear function. As shown in
the following figure, R1 and C1 are connected to
PWCR, and R2 is connected to RST to operate the function. If VI1 drops below VDET, Tr1 and Tr2 conduct and
PWCR and RST are grounded. If VI1 recovers and rises
higher than VREL, Tr1 turns OFF. The detection voltage hysteresis is 5% (Typ.) and VREL is V DET × 1.05
(Typ.).
4–14
VGND
Disabling power-on clear
Always connect PWCR to either VO or GND. If voltage detection only is required, remove the resistor between PWCR and VO and monitor the level at RST. If
neither function is required, connect PWCR to GND.
Leaving PWCR unconnected results in an undefined inverter gate voltage in the VO circuit, causing transient
currents to flow between VO and GND.
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
In standby mode, the booster, including the crystal oscillator, is disabled (the switching transistor used to
drive the inductor is turned OFF) and the built-in
backup switch is turned ON, so that the input voltage at
VI2 is output at VO. This enables the battery backup
function. PS is pulled-up internally, so when standby
mode is not required, the pin should be left open.
VO circuit
PWCR
VI1 circuit
VI1
RST
Powering up
The S1F76380 series are provided with a response compensation input. A response compensation capacitor is
connected between VCONT and V O, allowing the ripple
voltage generated by the boosted output voltage to be
suppressed to a minimum.
VI2
Battery
PS
C
Standby mode and battery backup
S1F76300
Series
–
+
Output voltage response compensation
Ensure that VO is at least the minimum operating voltage (0.9V) before switching on the booster circuit.
One way to do this is to attach a battery so that VO never
drops below the minimum required for backup mode. If
no such external power supply is available, connect VI2
to V I1 and hold PS Low when applying power for the
first time.
S1F76310M
The S1F76310 series are equipped with a standby
mode, initiated by connecting PS to GND.
TYPICAL APPLICATIONS
Example Circuits
The output current, IO, and power conversion efficiency, Peff of a particular device in a series depends on
factors such as the switching frequency, type of coil,
and the size and type of other external components.
S1F76310 series
S1F76380 series
L
L
D
VSW
VSW
S1F76380M/C
S1F76310M/C
GND
GND
PWCR
R1
PS
S1F70000 Series
Technical Manual
VO
VI1
VO
VI1
VI2
D
VCONT
C1
C1
PWCR PS RST
RST
EPSON
4–15
S1F76300 Series
Notes
■ 100µH ≤ L ≤ 1mH, C ≤ 10µF, D = Schottky diode
■ S1F76310M1A0
• Peff = 70% when L = 220µH (leadless inductor),
VI1 = 1.5V, fCLK = 32kHz, IO = 4mA
• Peff = 75% when L = 220µH (drum coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 6mA
• Peff = 80% when L = 300µH (toroidal coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 7mA
■ S1F76310M1B0
• Peff = 70% when L = 220µH (leadless inductor),
VI1 = 1.5V, fCLK = 32kHz, IO = 8mA
• Peff = 75% when L = 220µH (drum coil),
VI1 =1.5V, fCLK = 32kHz, IO = 9mA
• Peff = 80% when L = 300µH (toroidal coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 10mA
Inductor
Use an inductor with low direct-current resistance and
low losses.
External components
The performance characteristics of switching regulators
depend greatly on the choice of external components.
Observing the following guidelines will ensure high
performance and maximum efficiency.
Diode
Use a Schottky barrier diode with a high switching
speed and low forward voltage drop, VF.
4–16
Leadless
Pre-wound, leadless inductors using surface-mount
technology are the most suitable for portable equipment
and other space-critical applications.
Drum coil
Avoid using drum coils because their magnetic field
can induce noise.
Toroidal coil
Use a toroidal coil to virtually eliminate magnetic field
leakage, reduce losses and improve performance.
Capacitor
To minimize ripple voltages, use a capacitor with a
small equivalent direct-current resistance for smoothing.
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Sample External Components
Leadless Inductors
TDK NKF453232 series magnetically shielded leadless inductors
Inductance
( µH)
NLF453232-390K
39.0 ±10%
NLF453232-470K
47.0 ±10%
NLF453232-560K
56.0 ±10%
NLF453232-680K
68.0 ±10%
NLF453232-820K
82.0 ±10%
NLF453232-101K 100.0 ±10%
NLF453232-121K 120.0 ±10%
NLF453232-151K 150.0 ±10%
NLF453232-181K 180.0 ±10%
NLF453232-221K 220.0 ±10%
NLF453232-271K 270.0 ±10%
NLF453232-331K 330.0 ±10%
NLF453232-391K 390.0 ±10%
NLF453232-471K 470.0 ±10%
NLF453232-561K 560.0 ±10%
NLF453232-681K 680.0 ±10%
NLF453232-821K 820.0 ±10%
NLF453232-102K 1000.0 ±10%
Qmin
LQ frequency
(MHz)
50
50
50
50
50
50
50
50
40
40
40
40
40
40
40
40
40
40
2.52
2.52
2.52
2.52
2.52
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.252
Characteristic response
Device
frequency
(MHz-Min.)
13
12
11
10
10
9
8
7
6
5.5
5
4.5
4
3.8
3.6
3.4
3
2.5
DC resistance Rated current
(Ω-Max.)
(mA-Max.)
1.89
2.10
2.34
2.60
2.86
3.25
3.64
4.16
5.72
6.30
6.90
7.54
8.20
9.20
10.50
12.00
13.50
16.00
44
41
39
36
34
32
30
28
26
24
23
23
21
19
18
17
16
15
S1F76300
Series
Device
Measurement circuit
1000
Inductance (µH)
500
100
820 µH
390 µH
20,000 µF
A
150 µH
DC
supply
50
5H
Lx
YHP4255A
universal bridge
33 µH
10
5
1
10 µH
4.7 µH
1.0 µH
10
50
100
500
1000
DC current (mA)
S1F70000 Series
Technical Manual
EPSON
4–17
S1F76300 Series
Drum coil inductors
Taiyo Yuuden FL series micro-inductors
Device
FL3H
FL4H
FL5H
FL7H
FL9H
FL11H
Inductance
0.22µH to 10µH
0.47µH to 12µH
10µH to 1mH
680µH to 8.2mH
330µH to 33mH
10mH to 150mH
Direct current (mA)
280 to 670
300 to 680
50 to 320
50 to 170
50 to 500
35 to 110
Toroidal coil inductors
Tohoku Metal Industries HP series toroidal coil inductors
Device
Rated current IDC
(A)
HP011
HP021
HP031
HP012
HP022
HP032
HP052
HP013
HP023
HP033
HP055
HP034S
HP054S
HP104S
HP024
HP034
HP054
HP104
HP035
HP055
HP105
HP205
1
2
3
1
2
3
5
1
2
3
5
3
5
10
2
3
3
10
3
5
10
20
4–18
Inductance (µH) at 20kHz, 5V
IDC = 0
IDC = rating
200
160
65
55
30
23
600
450
180
135
120
80
45
30
1000
800
500
330
130
100
90
55
400
250
350
160
50
30
1500
950
300
230
210
140
45
30
700
500
600
330
180
95
20
14
EPSON
Diameter × height Wire gauge
(mm-Max.)
(mmø)
φ 20 × 12
φ 22 × 13
φ 26 × 14
φ 36 × 18
φ 36 × 21
φ 43 × 23
0.5
0.7
0.8
0.5
0.7
0.8
1.0
0.5
0.7
0.8
1.0
0.8
1.0
1.6
0.7
0.8
1.0
1.6
0.5
1.0
1.6
1.8 × 2 P
S1F70000 Series
Technical Manual
S1F76300 Series
Diodes
Shindengen DINS4 Schottky barrier diodes
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
θjl
θja
Rating
Min. Typ. Max.
Condition
IF = 1.1A,
pulse measurement
VR = VRM,
pulse measurement
Unit
—
—
0.55
V
—
—
1
mA
—
—
—
—
23
157
˚C/W
˚C/W
Characteristics
5
Tp = 25 ˚C (Typ.)
Tp = 25 ˚C (Max.)
Tp =125 ˚C (Max.)
1
S1F76300
Series
Forward current (A)
2
Tp = 125 ˚C (Typ.)
0.5
0.2
0.1
0.05
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward voltage (V)
Smoothing capacitors
NEC MSV series capacitors
Device
Package
Rated Static capacitance
+25, +85
type
voltage (V)
(µF)
˚C
A
6.3
4.7
0.08
B2
6.3
10
0.08
B2
6.3
15
0.08
B
6.3
15
0.08
C
6.3
33
0.08
D2
6.3
68
0.08
D
6.3
68
0.08
Tan δ
+125
˚C
0.1
0.1
0.1
0.1
0.1
0.1
0.1
–55
˚C
0.12
0.12
0.12
0.12
0.12
0.12
0.12
Leakage
current (µA)
MSVAOJ475M
0.5
MSVB2OJ106M
0.6
MSVB2OJ156M
0.9
MSVBOJ156M
0.9
MSVCOJ336M
2.0
MSVD2OJ686M
4.2
MSVDOJ686M
4.2
Note
The figures on the previous pages show data from the documents of various manufactures. For further details,
please contact the relevant manufacture.
S1F70000 Series
Technical Manual
EPSON
4–19
S1F76300 Series
Other Applications
Voltage booster
Combining an S1F76310 switching regulator with an
S1F76610C/M DC/DC converter and voltage regulator
L
D
+
C1
10 µF
VSW
1
14
2
13
3
12
VO
VI1
VI2
creates the voltage booster circuit shown in the following figure.
+
C2
10 µF
4 S1F76610C/M 11
S1F76310M
GND
ROSC
1 MΩ
5
10
6
9
7
8
POFF
C1
VO = – 15V
PS
PWCR
VI = –5 V
C3
10µF
S1F76310M1A0. The input voltage still reaches the
S1F76610C/M through L and D.
Potential levels are shown in the following figure.
S1F76310M1A0
VI = 1.5 V
S1F76610C/M
PS
VO (5 V)
VDD (5 V)
GND = 0 V
VI (1.5 V)
GND (0 V)
Boost
ON
Boost
OFF
Boost
ON
Boost
OFF
VI = 5 V
VDD (0 V)
POFF
GND = 0 V
VO (–10 V)
Although the circuit appears to have two ON/OFF control points, PS on the S1F76310M1A0 and POFF on the
S1F76610C/M, PS only shuts down the
4–20
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Output voltage adjustment
To ensure stable output, any circuit that adjusts the output voltage must contain C1, RA and R B. To stop
switching current from affecting VO, the circuit must
also satisfy the condition IO < IR.
Step-up
voltage
output
RA
VSW
The following figure summarizes the relevant circuits
inside an S1F76300 series chip.
VO is connected to the level shift and buffer circuit,
which provide the gate bias for the switching transistor
driving the inductor. The current drain, IO1, varies with
the load and is typically 10µA. The current, IO2 ,
through the internal resistors R1 and R2, is typically
1µA.
VI
VI
VO
IO
IO1
IR
VO
IO2
CL
S1F76310M
Comparatpr
GND
C
IO
VSW
RB
Buffer
(IO < IR)
Level
shifter
R1
Controller
VREF
R2
S1F76300
Series
Voltage adjustment
circuit
S1F70000 Series
Technical Manual
EPSON
4–21
S1F76300 Series
S1F76330 Series Built-in Crystal Oscillator Type CMOS
Switching Regulators
DESCRIPTION
APPLICATIONS
The S1F76330 series of CMOS switching regulators
provide input voltage step-up and regulation to a specified voltage using an external coil. The devices in these
series incorporate precision, low-power reference voltage generators and transistors for driving an internal
comparator. They feature low power consumption, low
operating voltages and standby operation.
The devices offer a range of fixed output voltages, from
2.35 to 5.00V.
They are available in 8-pin SOP3s.
• Fixed-voltage power supplies for battery-operated
equipment such as portable video cassette recorders,
video cameras and radios
• Power supplies for pages, memory cards, calculators
and similar hand-held equipment
• Fixed-voltage power supplies for medical equipment
• Fixed-voltage power for communications equipment
• Power supplies for microcomputers
• Uninterruptable power supplies
FEATURES
•
•
•
•
•
0.9V (Min.) operating voltage
8µA (Typ.) maximum current consumption
Standby operation
3µA (Typ.) standby current consumption
Built-in oscillator circuit for use with external crystal
oscillator
• SOP3-8pin
LINEUP
Voltage (V)
Product
S1F76330M1B0
4–22
Output
Multiplication
Crystal
Voltage Power-on Battery Response
voltage
frequency
Oscillator Package
Input Output
detection clear
backup compensation temperature
Output
source
characteristic
1.5
(0.9 Min.)
3.00
Crystal
oscillator
No
No
EPSON
No
No
No
Yes
SOP3-8pin
S1F70000 Series
Technical Manual
S1F76300 Series
BLOCK DIAGRAMS
PIN ASSIGNMENTS
S1F76330 series
S1F76330 series
PS
CI
CO
CLO
CO
1
VI1
Oscillator
Reference
voltage
generator
+
–
CI
2
VSW
GND
3
VO
VSW
4
S1F76330
series
8
PS
7
VI1
6
CLO
5
VO
Control
switch
GND
PIN DESCRIPTIONS
S1F76330 series
Name
CO
CI
GND
VSW
VO
CLO
VI
PS
Description
Crystal drain
Crystal gate
Ground
External inductor drive
Output voltage
Oscillator output
Step-up input voltage
Power save. See note.
S1F76300
Series
Number
1
2
3
4
5
6
7
8
Note
See standby mode in the functional description.
S1F70000 Series
Technical Manual
EPSON
4–23
S1F76300 Series
SPECIFICATIONS
Absolute Maximum Ratings
S1F76330 series
Parameter
Symbol
VI1
IO
VO
Input voltage
Output current
Output voltage
Power dissipation
PD
Rating
7
100
7
200 (SOP)
300 (DIP)
–30 to +85
–65 to +150
260
Unit
V
mA
V
mW
Operating temperature range
Topr
Storage temperature range
Tstg
Solding temperature (for 10 s). See note.
Tsol
Note
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions.
solder dip to mount S1F70000 series power supply devices.
˚C
˚C
˚C
Never use
Electrical Characteristics
S1F76330M1B0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter
Input voltage
Output voltage
Symbol
Conditions
VI1
VO
VO > VI2
VI1 = 1.5V
VI1 = 1.5V,
fCLK = 32kHz,
IO = 1.0mA
VI1 = 1.5V
VI1 = 1.5V, VO = 3.0V,
VSW = 0.2V
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
VI1 = 1.5V, VO = 3.0V,
VOL = 0.2V
VI1 = 1.5V, VO = 3.0V,
VOH = 0.2V
VIH = 1.5V
CG = 10pF, CD = 10pF,
RD = 300kΩ,
fOSC = 32kHz
Operating current
IDDO
Standby current
IDDS
Switching transistor ON resistance
RSWON
Switching transistor leakage current
ISWQ
CLO Low-level output current
IOL
CLO High-level output current
IOH
PS pull-up current
Oscillator start-up voltage
Oscillator shut-down voltage
IIH
VSTA
VSTP
4–24
EPSON
Rating
Min. Typ. Max.
0.9 — 2.0
2.90 3.00 3.10
Unit
V
V
—
5
30
µA
—
3
10
µA
—
6
12
Ω
—
—
0.5
µA
0.5
1.0
—
µA
0.55 1.1
—
µA
—
0.9
—
0.5
—
0.9
µA
V
V
—
—
—
S1F70000 Series
Technical Manual
S1F76300 Series
Typical Performance Characteristics
Normalized frequency deviation (ppm)
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
50
Normalized frequency deviation = f–fO
fO
0
CD = 10 pF
–50
6
0
10
Fixed output voltage temperature characteristic
Normalized frequency deviation (ppm)
VI1 = 1.5 V
Standby current (µA)
4
3
2
1
50
75
1.0
85
RD = 0 Ω
VI = 1.5 V
fO = 96 kHz
CG = CD = 10 pF
Normalized frequency deviation = ∆f/f
0.5
10
CG = CD = 10 pF
5
CG = CD = 20 pF
–5
Normalized frequency deviation = ∆f/f
50
1.0
1.5
2.0
2.5
S1F70000 Series
Technical Manual
2.5
Normalized frequency deviation = f–fO
fO
RD = 0 Ω
VI = 1.5 V
fO = 96 kHz
CD = 10 pF
CD = 20 pF
0
10
20
30
Gate capacitance (pF)
Input voltage (V)
Normalized frequency deviation vs.
input voltage 1
2.0
0
–50
–10
0.5
1.5
Normalized frequency deviation vs.
input voltage 2
Normalized frequency deviation (ppm)
Normalized frequency deviation (ppm)
Standby current vs. ambient temperature
0
1.0
Input voltage (V)
Ambient temperature (˚C)
RD = 200 kΩ
VI = 1.5 V
fO = 32 kHz
CG = CD = 20 pF
0
–1.0
0
25
30
Normalized frequency deviation vs.
gate capacitance 1
5
0
20
Gate capacitance (pF)
Fixed output voltage (V)
–30
CD = 20 pF
RD = 200 kΩ
VI = 1.5 V
fO = 32 kHz
S1F76300
Series
characteristic (mV/˚C)
Fixed output voltage temperature
Ta = 25 ˚C
Normalized frequency deviation vs. gate
capacitance 2
EPSON
4–25
S1F76300 Series
Load characteristics
S1F76330M1B0
10
fCLK = 32.8 kHz
Maximum load current (mA)
Output voltage (V)
3.5
3.0
2.5
VI1 = 1.5 V
VI1 = 1.25 V
VI1 = 1.0 V
2.0
1.5
1.0
100
Ta = 25 ˚C
fCLK = 32 kHz
Peff
5
50
ILmax
0
0
5
10
15
20
100
25
200
300
500
Load efficiency (%)
4.0
0
1000
Inductance (µH)
Load current (mA)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSVB20J106M (10µF)
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSVB20J106M (10µF)
PACKAGE MARKINGS
S1F76330 device packages use the following marking.
7631
Series number
First subcode character
Second subcode character
Code number
4–26
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
FUNCTIONAL DESCRIPTIONS
Basic Voltage Booster Operation
Tr1 switches ON and OFF at the frequency of the clock
pulses from the crystal oscillator. When the transistor is
ON, the circuit stores energy in L. When it is OFF, this
energy flows through D to charge C.
L
D
Tr1
VO
Crystal
Reference
voltage
generator
C
GND
CD
CG
Output
voltage regulator
VI1
GND
VSW
Internal Circuits
Crystal
oscillator
VO
Crystal oscillator
The S1F76330 series incorporate a crystal oscillator circuit. An external crystal and drain resistor are used to
generate the booster circuit clock. The crystal oscillator
is connected to CI and CO as shown in the following
figure.
A
+
–
S1F76300
Series
VI1
The output voltage regulator regulates the boosted output voltage. This voltage is determined by the level at
point A between the two resistors connecting VO and
GND. These series use an on-chip resistor to set the
output at a specified voltage.
GND
CI
Note
In step-up voltage operation, the ripple voltage created
by the switching operation is large relative to the output
voltage described above. This ripple voltage is affected
by external components and load conditions. The user
is advised to check this voltage carefully.
S1F76330
Crystal
CO
RD
CG
CD
In the S1F76330 series, the crystal oscillator output is
sent to CLO as the VO system signal. The crystal oscillator circuit is activated by VI but, because the output
level is shifted and the output is connected to CL O, the
oscillator output cannot be obtained without a voltage at
VO. Since the crystal oscillator is activated when an
input voltage is applied, oscillation continues even in
standby mode.
Reference voltage generator and output
voltage regulator
The reference voltage generator regulates VI1 to generate a voltage for the voltage regulator circuit.
S1F70000 Series
Technical Manual
Standby mode
Connecting PS to GND places the chip in standby
mode. In this mode, the crystal oscillator is disabled,
switching off the inductor drive transistor and the voltage booster circuit. Typically, PS is connected to RST.
If standby mode is not required, leave PS open as it has
a pull-up resistor.
Output voltage response compensation
The S1F76340 series incorporates a response compensation input. A response compensation capacitor is
connected between VCONT and V O, allowing the ripple
voltage generated by the boosted output voltage to be
suppressed to a minimum.
EPSON
4–27
S1F76300 Series
Powering up
Ensure that VO is at least the minimum operating voltage (0.9V) before switching on the booster circuit. One
way to do this is to connect a capacitor between PS and
GND so that the chip connects VO to VI when the power
is applied for the first time.
VI2
Battery
PS
C
S1F76330M
TYPICAL APPLICATIONS
Example Circuits
The output current, IO, and power conversion efficiency
Peff, of a particular device in the series depends on fac-
tors such as the switching frequency, type of coil, and
the size and type of other external components.
S1F76330 series
L
D
VSW
VO
VI
S1F76330M
GND
C1
Crystal
PS CLO
CG
CD
Notes
■ 100µH ≤ L ≤ 1mH, C ≤ 10µF, D: Schottky diode
■ S1F76330M1B0
• Peff = 70% when L = 220µH (leadless inductor),
VI1 = 1.5V, fCLK = 32kHz, IO = 8mA
• Peff = 75% when L = 220µH (drum coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 9mA
• Peff = 80% when L = 300µH (toroidal coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 10mA
External Components
The performance characteristics of switching regulators
depend greatly on the choice of external components.
Observing the following guidelines will ensure high
performance and maximum efficiency.
4–28
Inductor
Use an inductor with low direct-current resistance and
low losses.
Leadless
Pre-wound, leadless inductors using surface-mount
technology are the most suitable for portable equipment
and other space-critical applications.
Drum coll
Avoid drum coils because their magnetic field can induce noise.
Toroidal coil
Use a toroidal coil to virtually eliminate magnetic field
leakage, reduce losses and improve performance.
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Diode
Use a Schottky barrier diode with a high switching
speed and low forward voltage drop, VF.
Capacitor
To minimize ripple voltages, use capacitors with a
small equivalent direct-current resistance for smoothing.
Sample External Components
Device
Inductance
( µH)
Qmin
NLF453232-390K
39.0 ±10%
NLF453232-470K
47.0 ±10%
NLF453232-560K
56.0 ±10%
NLF453232-680K
68.0 ±10%
NLF453232-820K
82.0 ±10%
NLF453232-101K 100.0 ±10%
NLF453232-121K 120.0 ±10%
NLF453232-151K 150.0 ±10%
NLF453232-181K 180.0 ±10%
NLF453232-221K 220.0 ±10%
NLF453232-271K 270.0 ±10%
NLF453232-331K 330.0 ±10%
NLF453232-391K 390.0 ±10%
NLF453232-471K 470.0 ±10%
NLF453232-561K 560.0 ±10%
NLF453232-681K 680.0 ±10%
NLF453232-821K 820.0 ±10%
NLF453232-102K 1000.0 ±10%
50
50
50
50
50
50
50
50
40
40
40
40
40
40
40
40
40
40
Characteristic response
Device
LQ frequency
DC resistance Rated current
freuquency
(MHz)
(Ω-Max.)
(mA-Max.)
(MHz-Min.)
2.52
13
1.89
44
2.52
12
2.10
41
2.52
11
2.34
39
2.52
10
2.60
36
2.52
10
2.86
34
0.796
9
3.25
32
0.796
8
3.64
30
0.796
7
4.16
28
0.796
6
5.72
26
0.796
5.5
6.30
24
0.796
5
6.90
23
0.796
4.5
7.54
23
0.796
4
8.20
21
0.796
3.8
9.20
19
0.796
3.6
10.50
18
0.796
3.4
12.00
17
0.796
3
13.50
16
0.252
2.5
16.00
15
Measurement circuit
1000
Inductance (µH)
500
100
A
820 µH
390 µH
150 µH
DC
supply
20,000 µF
5H
Lx
YHP4255A
universal bridge
50
33 µH
10
5
1
10 µH
4.7 µH
1.0 µH
10
50
100
500
1000
DC current (mA)
S1F70000 Series
Technical Manual
EPSON
4–29
S1F76300
Series
Leadless inductors
TDK NLF453232 series magnetically-shielded leadless inductors
S1F76300 Series
Drum coil inductors
Taiyo Yuuden FL series micro inductors
Inductance ( µH)
0.22 to 10
0.47 to 12
10 to 1000
680 to 8200
330 to 33000
10000 to 150000
Device
FL3H
FL4H
FL5H
FL7H
FL9H
FL11H
Direct current (mA)
280 to 670
300 to 680
50 to 320
50 to 170
50 to 500
35 to 110
Toroidal coil inductors
Tohoku Metal Industries HP series toroidal coil inductors
Device
Rated current
IDC (A)
HP011
HP021
HP031
HP012
HP022
HP032
HP052
HP013
HP023
HP033
HP055
HP034S
HP054S
HP104S
HP024
HP034
HP054
HP104
HP035
HP055
HP105
HP205
1
2
3
1
2
3
5
1
2
3
5
3
5
10
2
3
5
10
3
5
10
20
4–30
Inductance (µH) at 20kHz, 5V
IDC = 0
IDC = rating
200
160
65
55
30
23
600
450
180
135
120
80
45
30
1000
800
500
330
130
100
90
55
400
250
350
160
50
30
1500
950
300
230
210
140
45
30
700
500
600
330
180
95
20
14
EPSON
Diameter × height Wire gauge
(mm-Max.)
(mmø)
20 × 12
22 × 13
26 × 14
36 × 14
36 × 21
43 × 23
0.5
0.7
0.8
0.5
0.7
0.8
1.0
0.5
0.7
0.8
1.0
0.8
1.0
1.6
0.7
0.8
1.0
1.6
0.8
1.0
1.6
1.8 × 2 P
S1F70000 Series
Technical Manual
S1F76300 Series
Diodes
Shindengen DINS4 Schottky barrier diodes
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
θjl
θja
Conditions
IF = 1.1A,
pulse measurement
VR = VRM,
pulse measurement
Rating
Min. Typ. Max.
Unit
—
—
0.55
V
—
—
1
mA
—
—
—
—
23
157
˚C/W
˚C/W
Characteristics
5
Tp = 125 ˚C (Typ.)
Tp = 25 ˚C (Max.)
1
Tp = 125 ˚C (Max.)
S1F76300
Series
Forward current (A)
2
Tp = 25 ˚C (Typ.)
0.5
0.2
0.1
0.05
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward voltage (V)
Smoothing capacitors
NEC MSV series capacitors
Tan δ
Package
Static capacitance
Leakage
Device
Voltage (V)
+25, +85 +125
–55
type
(µF)
current (µA)
˚C
˚C
˚C
MSVA0J475M
A
6.3
4.7
0.08
0.1
0.12
0.5
MSVB20J106M
B2
6.3
10
0.08
0.1
0.12
0.6
MSVB20J156M
B2
6.3
15
0.08
0.1
0.12
0.9
MSVB0J156M
B
6.3
15
0.08
0.1
0.12
0.9
MSVC0J336M
C
6.3
33
0.08
0.1
0.12
2.0
MSVD20J686M
D2
6.3
68
0.08
0.1
0.12
4.2
MSVD0J686M
D
6.3
68
0.08
0.1
0.12
4.2
Note
The figures on the previous pages show data from the documents of various manufacturers. For further details,
please contact the relevant manufacturer.
S1F70000 Series
Technical Manual
EPSON
4–31
S1F76300 Series
Other Applications
Voltage booster
Combining an S1F76330M1B0 switching regulator
with an S1F76610C/M DC/DC converter and voltage
L
regulator creates the voltage booster circuit shown in
the following figure.
D
+
C1
10 µF
VSW
1
14
2
13
3
12
VO
VI1
+
C2
10 µF
S1F76330M
GND
ROSC
1 MΩ
4 S1F76610C/M 11
5
10
6
9
7
8
POFF
C
VO = –15 V
PS
CG
RD
VI = –5 V
Potential levels are shown in the following figure.
S1F76330M1B0
VO (5 V)
C3
10 µF
CD
S1F76610C/M
VDD (5 V)
Although the circuit appears to have two ON/OFF control points, PS on the S1F76330M1B0 and POFF on the
S1F76610C/M, PS only shuts down the
S1F76330M1B0. The input voltage still reaches the
S1F76610C/M through L and D.
VI = 1.5 V
VI (1.5 V)
GND (0 V)
PS
VDD (0 V)
GND = 0 V
Boost
ON
Boost
OFF
Boost
ON
Boost
OFF
VI = 5V
POFF
VO (–10 V)
4–32
GND = 0 V
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Output voltage adjustment
To ensure stable output, any circuit that adjusts the output voltage must contain C1, RA and R B. To stop
switching current from affecting VO, the circuit must
also satisfy the condition IO < IR.
RA
VSW
VI
Step-up
voltage
output
VO
The following figure summarizes the relevant circuits
inside an S1F70000 series chip.
VO is connected to the level shift and buffer circuit,
which provide the gate bias for the switching transistor
driving the inductor. The current drain IO1, varies with
the load and is typically 10µA. The current, IO2 ,
through the internal resistors R1 and R2 is typically
1µA.
IO
VI
IR
IO1
SCI7631M/C
VO
IO2
Comparator
GND
C
IO
VSW
CL
RB
(IO < IR)
Buffer
Level
shifter
R1
Controller
VREF
R2
S1F76300
Series
Voltage adjustment
circuit
S1F70000 Series
Technical Manual
EPSON
4–33
S1F71100 Series
S1F71100 Series PWM Type Step-down DC/DC Switching Regulator
DESCRIPTION
FEATURES
S1F71100 is a pulse width modulation (PWM) type
step-down DC/DC converter control IC for which the
CMOS process is used and to which a power transistor
is connected outside. S1F71100 is composed of an oscillator, a reference voltage circuit, an error amplifier, a
PWM circuit, a soft start circuit, a driver, etc. When this
IC drives an external P ch power MOS transistor,
S1F71100 can constitute a step-down DC/DC converter
that converts input voltages up to 12V into the output
voltage of 3.3V.
S1F71100 is also provided with a low-voltage protection circuit, an overcurrent protection circuit and a soft
start protection circuit. When receiving external signals, S1F71100 can stop the oscillator and the switching
circuit and turn off the power, so that it can reduce
wasteful current consumption at the time of system halt.
• Input voltage : 3.3V ~ 12V
• Output voltage : 3.3V (S1F71100M0A0)
• Power off current : 1µA
• Self current consumption : 800µA
• Frequency fixing (200kHz) PWM
• Power off function (IC shutdown)
• Soft start function
• Overcurrent protection function
• Low-voltage protection function
• Shipping pattern : plastic package SOP4-8pin
* Radiation-resistant design has not been provided for
this specification.
BLOCK DIAGRAM
VDD
Low-voltage
protection circuit
POFFX
Overcurrent
protection circuit
+
–
–
+
Reference
voltage circuit
Soft start
SSCAP
ISENSE
Oscillator
Driver
VO
+
ERCAP
SWO
PWM circuit
–
Error amplifier
VSS
4–34
EPSON
S1F70000 Series
Technical Manual
S1F71100 Series
PIN ASSIGNMENTS
Top View
SSCAP
1
POFFX
2
VDD
ISENSE
8
VSS
7
VO
3
6
ERCAP
4
5
SWO
Index
SOP4-8pin
Pin No.
Pin name
Pin Type
1
SSCAP
—
S1F71100
Series
PIN DESCRIPTIONS
Description
The soft start function is obtained when a capacitor is connected
between the capacitor connection pin for setting soft start and the VSS
pin.
2
POFFX
—
Power off control pin
During normal operation : VDD level
At power off time : VSS level
3
VDD
Power Power supply pin (+)
supply
4
ISENSE
—
Load current feedback pin
Load current detection resistor connection pin
(Connect a resistor of 100mΩ)
5
SWO
6
ERCAP
Output Switching Pch power MOS transistor drive pin
–
7
VO
Input
8
VSS
Power Power supply pin (–)
Capacitor connection pin for external phase compensation
Output voltage feedback pin
supply
S1F70000 Series
Technical Manual
EPSON
4–35
S1F71100 Series
FUNCTIONAL DESCRIPTIONS
Description of Operation
S1F71100 is a step-down switching regulator control IC
of load current detection type pulse width modulation
(PWM) system and is composed of an oscillator, a reference voltage circuit, an error amplifier, a PWM circuit, various protection circuits, etc.
S1F71100 can constitute a switching regulator, which
converters input voltages up to 12V into output voltages
of 3.3V, when external parts such as a power MOSFET,
a diode, an inductor and a capacitor are connected to it.
S1F71100 controls PWM by means of the two systems
of output voltage feedback and load current feedback.
The output voltage feedback system converts output
voltage values of the switching regulator into voltage
feedback signals through the error amplifier. And the
load current feedback system detects currents flown to
the external load current detection resistor as voltage
values at the load current detection pin and converts
them into current feedback signal in the internal circuit.
These two feedback signals control the switching duty
so that outputs from the switching regulator become
optimum all the time. When the output voltage reduces,
the output level of the error amplifier changes, and the
switching duty is controlled so that the switching on
duty of the output transistor increases.
Oscillator
Since S1F71100 has a built-in oscillator, and no external part is necessary. The oscillation frequency is fixed
to 200kHz (Typ.). The oscillator stops its operation
when the power is turned off. When the low-voltage
protection circuit detects a low voltage, the output transistor is turned off, but the oscillation continues inside
the IC.
Soft Start
When a capacitor is connected to the SSCAP pin,
S1F71100 can set a soft start operation to prevent inrush
current at the time when the power is turned on. (Figure
6-1) The SSCAP pin is at the VSS level when the power
is turned off. When the soft start operation begins, the
soft start capacitor starts being charged and the voltage
at the SSCAP pin rises slowly. The output voltage rises
gradually as the voltage at the SSCAP pin rises. This
operation controls the switching pulse width at the time
when the power is turned on and restrains surge current
and output overshoot. The soft start time can be set according to the capacitance value of a capacitor to be
4–36
connected.
The voltage at the SSCAP pin drops to the VSS level
when an overcurrent is detected, when a low voltage is
detected or when the power is turned off, and the soft
start operation begins.
SSCAP pin
Soft start circuit
Soft start
capacitor
Figure 6.1 Connection Diagram of SSCAP Pin
Low-voltage Protection Circuit
The low-voltage protection circuit monitors the supply
voltage (voltage at the VDD pin). When the supply voltage drops below a detected voltage value, the low-voltage protection circuit works and stops the switching
operation of the output transistor. This low-voltage protection circuit links to the soft start circuit and drops the
voltage at the SSCAP pin to the VSS level during detection of low voltage.
The low-voltage protection circuit has hysteresis.
When the supply voltage returns to more than the release voltage, the voltage at the SSCAP pin rises slowly
and the soft start circuit starts it operation, then the lowvoltage protection circuit resumes the switching operation.
Overcurrent Protection Circuit
When the current flowing through the current detection
resistor increases more than the set current value and
the voltage at the ISENSE pin drops below a detected
voltage value, the overcurrent protection circuit operates. When the overcurrent protection circuit operates,
it maintains the SWO pin at the VDD level and turns off
the output transistor. It links to the soft start circuit, and
the soft start circuit controls output voltage rise after detection of overcurrent.
EPSON
S1F70000 Series
Technical Manual
S1F71100 Series
Power Off Function
S1F71100 can control circuit operations according to
external signal control. When the POFFX pin is connected to the VSS level, all circuits stop their operations
and their powers are turned off. The current consumption at the power off state is less than 1µA. When the
power is off, the SWO pin is at the VDD level and turns
off the voltage transistor. The voltage at the SSCAP pin
comes to the VSS level, and the output voltage is controlled with the soft start circuit after the power off state
is released. In the operating state, set the POFFX pin to
the VDD level to operate it. The POFFX pin cannot be
operated in a open state. When the power off function is
not used, connect the POFFX pin to the VDD pin.
ABSOLUTE MAXIMUM RATINGS
Symbol
Applicable Pin
Input voltage
V DD
VDD
15.0
V
Voltage at VO pin
VO
VO
V SS–0.3 to VDD+0.3
V
Voltage at POFFX pin
POFFX
POFFX
V SS–0.3 to VDD+0.3
V
Voltage at ERCAP pin
ERCAP
ERCAP
V SS–0.3 to VDD+0.3
V
Voltage at SSCAP pin
SSCAP
SSCAP
V SS–0.3 to VDD+0.3
V
Voltage at SWO pin
SWO
SWO
V SS–0.3 to VDD+0.3
V
Voltage at ISENSE pin
ISENSE
ISENSE
V SS–0.3 to VDD+0.3
V
PD
PD
300
MW
Package allowable loss
Rated Value
Unit
S1F71100
Series
Parameter
Ta≤25˚C
Operating temperature
Topr
–
–30 to +85
˚C
Storage temperature
Tstg
–
–55 to +150
˚C
Soldering temperature and time
Tsol
–
260 · 10
˚C·S
Note :Any operation under conditions exceeding the above absolute maximum ratings may result in a malfunction or a permanent destruction. When even an item is more than the rating, a temporary normal operation
is possible but with remarkably low reliability. So, be sure to keep all items below the ratings.
S1F70000 Series
Technical Manual
EPSON
4–37
S1F71100 Series
ELECTRICAL CHARACTERISTICS
DC Characteristics (S1F71100M0A0)
Unless otherwise specified, Ta = 25˚C.
Parameter
Symbol
Conditions
Specification
Min.
Typ.
Unit
Max.
Input supply voltage
VDD
—
3.3
—
12.0
V
Output voltage
VO
VDD=5.0V
3.150
3.3
3.450
V
0.8
1.4
mA
—
1.0
µA
Ta=–30 to +85˚C
Current consumption
IV DD
during operation
Current consumption
VDD=5.0V
V O=VDD
IOPR1
at power off time
VDD=5.0V
—
POFFX=VSS
Output current
IOHSWO
VDD=5.0V,VOH=50mV
–1.0
—
—
mA
at SWO pin
IOLSWO
VDD=5.0V,VOL=50mV
1.0
—
—
mA
∆VO
VDD=5.0 to 10v
—
30
—
mV
Input stability
*
Load stability
∆VO
IO=10mA to 300mA
—
30
—
mV
*
Soft start time
TSS
Capacitance for SS =0.1µF
—
40
—
ms
VDD=5.0V
*
IO=300mA
Input voltage
VIH
—
0.8VDD
—
—
V
at POFFX pin
VIL
—
—
—
0.2VDD
V
Leak current
ILINH
VI=VDD
—
—
0.1
µA
at POFFX pin
ILINL
VI=VSS
—
—
–0.1
µA
Conversion efficiency
EFFI
VDD=5.0V
—
90
—
%
Oscillation frequency
fOSC
V DD=5.0V VO=VSS
150
200
250
kHz
IO=200mA
*
SWO pin
I DET
VDD=5.0V
0.08
0.12
0.16
V
VDET1
Object pin : V DD
2.5
2.6
2.7
V
V HYS
Object pin : V DD
—
0.15
—
V
Output voltage
∆VO
VDD=5.0V
—
0.02
—
%/˚C
temperature coefficient
∆Ta
Ta=–30 to +85˚C
Overcurrent detection
voltage (VDD-VISENSE)
Low-voltage detection
voltage value
Low-voltage detection
hysteresis
* Characteristics vary with applicable conditions and parts. Select proper parts after sufficient evaluation.
4–38
EPSON
S1F70000 Series
Technical Manual
S1F71100 Series
EXAMPLE OF EXTERNAL CONNECTION OF REFERENCE CIRCUIT
Example of Standard Circuit
VDD
VDD
CIN2
Low-voltage
Overcurrent
protection circuit protection
circuit
+
CIN1
POFFX
Load current
detection resistor R
–
–
+
Reference
voltage circuit
ISENSE
SSCAP
ERCAP
ERCAP
phase
compensation
Soft start Oscillator
Driver
Pch
MOSTr
L
VO
+
PWM circuit
SWO
VO
3.3V
–
Error amplifier
VSS
D
CVOUT
Parts examples
CIN1
CIN2
SSCAP
ERCAP
R
PchTr
L
CVO
D
100µF
1µF
0.1µF
330pF
100mΩ
(Sanyo 16SA100M)
47µH
47µF
Schottkey
(Hitachi 2SJ484)
(Sumida CD105)
(Sanyo 16SA47M)
(Rohm RB161L-40)
* Characteristics vary with applicable conditions and
parts. Select proper parts after sufficient evaluation.
S1F70000 Series
Technical Manual
EPSON
4–39
S1F71100
Series
SSCAP
soft start
S1F71100 Series
MECHANICAL DATA
Plastic SOP4-8pin
Reference
D
INDEX
HE
5
E
8
θ
1
4
θ2
e
b
A1
A2
A
R1
R
C
Lead type STD (SOP4–8pin STD)
Symbol
Dimension in Milimeters
Min.
Nom.
Max.
E
4.8
5
5.2
D1
A
1.75
A1
0.15
A2
1.6
e
1.27
b
0.25
0.35
0.45
C
0.05
0.15
0.25
θ
L
0.55
L1
L2
HE
6.4
6.8
7.2
D
4.8
5
5.2
θ2
θ3
R
R1
* for reference
4–40
L2
θ3
EPSON
L
L1
Min.
(0.189)
(0.010)
(0.002)
Dimension in Inches*
Nom.
Max.
(0.197)
(0.204)
(0.069)
(0.006)
(0.063)
(0.05)
(0.014)
(0.006)
(0.017)
(0.009)
(0.022)
(0.252)
(0.189)
(0.268)
(0.197)
(0.283)
(0.204)
S1F70000 Series
Technical Manual
S1F71200 Series
DESCRIPTION
FEATURES
S1F71200 is a step-up/step-down DC/DC converter
control IC for which the CMOS process is used and to
which a power transistor is connected outside.
S1F71200 is composed of an oscillator, a reference
voltage circuit, an error amplifier, a PWM circuit, a series regulator, a driver, etc. When this IC drives an external power transistor, S1F71200 can constitute a stepup/step-down DC/DC converter that operates as a [stepdown] series regulator when the input voltage is High
and that operates as a [step-up] switching regulator of
pulse width modulation system (PWM) when the input
voltage is Low.
S1F71200 is also provided with an overcurrent protection circuit and a soft start circuit. When receiving external signals, S1F71200 can stop the oscillator and the
switching circuit and turn off the power, so that it can
reduce wasteful current consumption at the time of system halt.
• Input voltage
• Output voltage
S1F70000 Series
Technical Manual
•
•
•
•
•
•
•
*
: 2.5V to 12.0V
: 5.0V (S1F71200M0A0)
3.3V (S1F71200M0B0)
Power off current
: 1.0µA
Self current consumption : 150µA
(step-up portion)
15µA
(step-down portion)
Frequency fixing (200kHz) PWM at step-up time
Power off function (IC shutdown)
Soft start function
Overcurrent protection function
Shipping pattern
: plastic package
(SSOP2-16 pin)
Radiation-resistant design has not been provided for
this specification.
EPSON
4–41
S1F71200
Series
S1F71200 Series PWM Type Step-up/down DC/DC
Switching Regulator
S1F71200 Series
BLOCK DIAGRAM
Driver
Oscillator
SWO
Overcurrent detection
circuit
_
VDD1
ISENSE
+
PWM
VDD2
Soft start
_
SSC
VSS
EXO
+
Series regulator
VSW
VO
+
SRC
_
Error amplifier
IREF
SWC
Reference
voltage
circuit
VC
POFFX
VREF
4–42
EPSON
S1F70000 Series
Technical Manual
S1F71200 Series
PIN ASSIGNMENTS
1
Index
15
3
14
4
13
5
12
6
11
7
10
8
9
S1F71200
Series
2
16
SSOP2–16pin
S1F70000 Series
Technical Manual
EPSON
4–43
S1F71200 Series
PIN DESCRIPTIONS
Pin No. Pin name
Pin type
Power system
Description
1
VDD1
Power supply
VDD1
Power pin 1 (+), Input power pin
2
VDD2
Power supply
VDD2
Power pin 2 (+), Power pin for series regulator
circuit
3
EXO
Output
VDD2
PNP transistor base drive pin for series regulator
4
VO
—
—
Step-up/step-down output feedback pin
5
SRC
—
—
Series regulator phase compensation capacitor connection pin
6
IREF
Output
VDD1
Reference resistor connection pin. Connect a
100kΩ resistor between the VSS pins.
7
VREF
Output
VDD1
Reference voltage pin. Connect a 0.1µF
capacitance between the VSS pins.
8
(N.C)
—
—
9
POFFX
Input
VDD1
Power off control pin.
During normal operation : POFFX = VDD1
At power off time
: POFFX = VSS
No connection
10
VC
Input
VDD1
Step-up output voltage setting pin.
For setting V SW = VO + 1.0V : VC = VDD1
For setting V SW = VO + 0.5V : VC = VSS
11
SWC
—
—
Switching regulator phase compensation
capacitor connection pin
12
VSW
—
—
Step-up output feedback pin
13
VSS
—
—
Power pin (–), Ground pin
14
SSC
—
VDD1
Capacitor connection pin for soft start
15
ISENSE
Input
VDD1
Overcurrent detection pin
16
SWO
Output
VDD1
Step-up switching power transistor drive pin
4–44
EPSON
S1F70000 Series
Technical Manual
S1F71200 Series
FUNCTIONAL DESCRIPTIONS
Operation of Switching Regulator
S1F71200 monitors voltage at the VSW pin, i.e., the output voltage of the step-up switching regulator, and controls pulse width of the switching transistor. When the
voltage at the VSW pin drops below the step-up set voltage, S1F71200 changes the output level of the error amplifier and increases the on duty of the switching
transistor for control.
On the other hand, when the voltage at the VSW pin rises
over the step-up set voltage, S1F71200 reduces the on
duty for control. When voltages higher than the step-up
set voltage is constantly supplied to the V SW pin,
S1F71200 stops operation of the step-up switching.
When the switching stops completely, the input voltage
is supplied to the V SW pin through the coil and the diode. (The voltage at the VSW pin comes to the one obtained by reducing VF of the diode from the input voltage.)
S1F70000 Series
Technical Manual
Step-up Set Voltage
Step-up set voltage can be selected at the VC pin.
1 VC = High VDD1 level :
Step-up set voltage = 6.0V (S1F71200M0A0)
4.3V (S1F71200M0B0)
2 VC = Low VSS level :
Step-up set voltage = 5.5V (S1F71200M0A0)
3.8V (S1F71200M0B0)
In case of output stability and heavy load like ripple, 1
is superior, bur for the conversion efficiency at step-up
operation, 2 is superior. Characteristics vary with applicable external parts or voltage and load conditions.
So, select a proper voltage after sufficient evaluation.
The VC pin cannot be used in the open state.
Soft Start
When a capacitor is connected to the SSCAP pin,
S1F71200 can set a soft start operation to prevent inrush
current at the time when the power is turned on. The
SSCAP pin is at the VSS level when the power is turned
off (POFFX=VSS ). When the operation state is set
(POFFX=VDD1 ), the soft start capacitor starts being
charged and the voltage at the SSCAP pin rises slowly.
The step-up output voltage rises gradually as the voltage at the SSCAP pin rises. This operation is carried
out when the power is turned on, when the power off is
released or when the overcurrent detection is released
and restrains surge current and output overshoot.
EPSON
4–45
S1F71200
Series
Description of Operation
S1F71200 is a switching regulator (step-up) and series
regulator (step-down) control IC of pulse width modulation (PWM) system. When external parts such as
transistor, inductor, capacitor, diode and resistor are
connected, S1F71200 can constitute a step-up/stepdown DC/DC converter.
When the input voltage is lower than the specified voltage value, S1F71200 raises the voltage to the set voltage (selectable at the VC pin) with the switching regulator and lowers the step-up voltage with the series regulator to stabilize the output voltage. On the other hand,
when the input voltage is higher than the specified voltage value, S1F71200 stops the operation of the switching regulator (step-up) and operates the series regulator
(step-down) only. Switching operations with input
voltage makes constant voltage outputs possible all the
time.
S1F71200 Series
Overcurrent Protection Circuit
The overcurrent protection circuit functions when an
overcurrent flows through the current detection resistor
during the step-up operation and the voltage at the
ISENSE pin rises over the set voltage value. When the
overcurrent protection function works, the transistor
drive pin SWO comes to the VSS level and the switching transistor is turned off. Since the overcurrent protection circuit links to the soft start circuit, it drops the
voltage at the SSCAP pin to the VSS level during
overcurrent detection. When the overcurrent detection
is released, the voltage at the SSCAP pin rises slowly
and the soft start operation starts.
Power lost at the current detection resistor becomes a
factor of lower efficiency. When the overcurrent protection circuit is not necessary, short-circuit the ISENSE
pin to the VSS pin. The ISENSE pin cannot be used in an
open state.
Power Off Function
S1F71200 can control circuit operations according to
external signal control. When the POFFX pin is set to
the VSS level, all circuits stop and their powers are
turned off. The current consumption at the power off
state is less than 1µA. When the power is off, the SWO
pin is set to the VDD level, the EXO pin is set to the
VDD2 level and respective external transistors are
turned.
The voltage at the SSCAP pin comes to the VSS level,
and the soft start circuit controls the step-up operation
output voltage is controlled with the soft start circuit after the power off state is released. The soft start circuit
controls step-up operations after power off release.
When being set to the VDD level, the POFFX pin operates in general. The POFFX pin cannot be used in an
open state. When the power off function is not used,
connect the POFFX pin to the VDD1 pin.
Operation of Series Regulator
S1F71200 has a built-in series regulator control circuit.
When driving the PNP transistor as an external part,
S1F71200 reduces voltage supplied to the VDD2 pin and
constitutes a series regulator. The VDD2 pin is generally
connected to the VSW pin of step-up output.
This series regulator operates monitoring voltage at the
VO pin of step-up/step-down output. It controls the
drive current (base current of the PNP transistor) at the
EXO pin to stabilize voltage at the VO pin.
4–46
EPSON
S1F70000 Series
Technical Manual
S1F71200 Series
Parameter
Symbol
Applicable Pin
Rating
Unit
Input voltage
VDD
VDD1
VDD2
15.0
V
Voltage at EXO pin
EXO
EXO
VSS – 0.3 to VDD2 + 0.3
V
VO
VO
VSS – 0.3 to 15
V
Voltage at SRC pin
SRC
SRC
VSS – 0.3 to 15
V
Voltage at IREF pin
IREF
IREF
VSS – 0.3 to VDD1 + 0.3
V
Voltage at VREF pin
VREF
VREF
VSS – 0.3 to VDD1 + 0.3
V
POFFX
POFFX
VSS – 0.3 to VDD1 + 0.3
V
VC
VC
VSS – 0.3 to VDD1 + 0.3
V
Voltage at SWC pin
SWC
SWC
VSS – 0.3 to 15
V
Voltage at VSW pin
VSW
VSW
VSS – 0.3 to 15
V
Voltage at SSC pin
SSC
SSC
VSS – 0.3 to VDD1 + 0.3
V
ISENSE
ISENSE
ISENSE
VSS – 0.3 to VDD1 + 0.3
V
SWO
SWO
SWO
VSS – 0.3 to VDD1 + 0.3
V
Package allowable loss
PD
PD
210
Ta ≤ 25°C
MW
Operating temperature
Topr
—
–30 to +85
°C
Storage temperature
Tstg
—
–55 to +150
°C
Soldering temperature and time
Tsol
—
260 · 10
°C · s
Voltage at VO pin
Voltage at POFFX pin
Voltage at VC pin
Note
Any operation under conditions exceeding the above absolute maximum ratings may result in a malfunction or a
permanent destruction. When even an item is more than the rating, a temporary normal operation is possible but
with remarkably low reliability. So, be sure to keep all items below the ratings.
S1F70000 Series
Technical Manual
EPSON
4–47
S1F71200
Series
ABSOLUTE MAXIMUM RATINGS
S1F71200 Series
ELECTRICAL CHARACTERISTICS
S1F71200M0A0 (Output : 5.0V)
DC Characteristics
Parameter
Symbol
Unless otherwise specified, Ta = 25°C.
Rating
Conditions
Unit
Min.
Typ.
Max.
Input supply voltage 1
V DD1
V DD1 pin
2.5
—
12.0
V
Input supply voltage 2
V DD2
V DD2 pin
—
—
12.0
V
Step-up set voltage
V SW
V SW1 pin, VC = VDD1
—
6.0
—
—
5.5
—
Output voltage
VO
4.8
5.0
5.2
V
Operating time
current consumption 1
IV DD1-1
(V DD1 system)
V DD1 = 3V, VDD2 = 6V
—
150
250
µA
(during step-up
operation)
IV DD2-1
(V DD2 system)
V DD1 = 3V, VDD2 = 6V
—
15
30
µA
Operating time
IV DD1-2
(V DD1 system)
V DD1 = 6V, VDD2 = 6V
—
100
200
µA
current consumption 2
(operation for
IV DD2-2
step-down only)
(V DD2 system)
V DD1 = 6V, VDD2 = 6V
—
20
40
µA
IQ
V DD1 = 12V, V DD2 = 12V
—
—
1.0
µA
IOHSWO
V DD1 = 3V, VDD2 = 6V
V OH = 50mV
–0.6
—
mA
IOLSWO
V DD1 = 3V, VDD2 = 6V
V OL = 50mV
1.0
—
mA
Input stability
∆VO
V DD = 3V to 12V
—
50
—
mV*
Load stability
∆VO
I L = 10mA to 100mA
—
50
—
mV*
Input voltage level
V IH
—
0.8VDD1
—
—
V
at POFFX pin,
at VC pin
V IL
—
—
—
0.2VDD1
V
Power off time
current consumption
Output current
at SWO pin
4–48
VC = VSS
V DD2 = 6V
Ta = –30°C to +85°C
EPSON
V
S1F70000 Series
Technical Manual
S1F71200 Series
DC Characteristics
Parameter
Unless otherwise specified, Ta = 25°C.
Symbol
Rating
Conditions
Unit
Min.
Typ.
Max.
Input pin leak current
ILINH
VIN = VDD1
—
—
1.0
µA
at POFFX pin,
at VC pin
ILINL
VIN = VSS
—
—
–1.0
µA
Step-up soft start time
TSS
SSCAP = 0.1µF
VDD1 = 3.0V, VC = VDD1
—
100
—
ms*
—
85
—
%*
Step-up portion
conversion efficiency
EFFI
VDD1 = 3.3V, VC = VSS
Oscillation frequency
fOSC
VDD1 = 3V
(Measure it at the SWO pin.)
120
200
280
kHz
IDET
VISENSE
0.10
0.15
0.20
V
∆VO
∆Topr
Ta = –30°C to +85°C
—
0.015
—
%/°C
Overcurrent detection
voltage
Output voltage
temperature coefficient
* These values are available when external parts are used in the example of circuit connection shown on the attached sheet.
The characteristics vary with applicable parts. Select proper parts after sufficient evaluation.
S1F70000 Series
Technical Manual
EPSON
4–49
S1F71200
Series
IO = 50mA
S1F71200 Series
S1F71200M0B0 (Output : 3.3V)
DC Characteristics
Parameter
Symbol
Unless otherwise specified, Ta = 25°C.
Rating
Conditions
Unit
Min.
Typ.
Max.
Input supply voltage 1
VDD1
V DD1 pin
2.5
—
12.0
V
Input supply voltage 2
VDD2
V DD2 pin
—
—
12.0
V
Step-up set voltage
VSW
V SW1 pin, VC = VDD1
VC = VSS
—
—
4.3
3.8
—
—
V
Output voltage
VO
V DD2 = 4.3V
Ta = –30°C to +85°C
3.15
3.3
3.45
V
Operating time
IVDD1-1
V DD1 = 3V, VDD2 = 4.3V
(VDD1 system)
—
150
250
µA
current consumption 1
(during step-up
IVDD2-1
operation)
(VDD2 system)
—
15
30
µA
Operating time
IVDD1-2
(VDD1 system)
—
100
200
µA
current consumption 2
(operation for
step-down only)
IVDD2-2
(VDD2 system)
—
20
40
µA
Power off time
current consumption
IQ
—
—
1.0
µA
–0.6
—
mA
1.0
—
mA
Output current
IOHSWO
at SWO pin
IOLSWO
V DD1 = 3V, VDD2 = 4.3V
V DD1 = 5V, VDD2 = 5V
V DD1 = 5V, VDD2 = 5V
V DD1 = 12V, VDD2 = 12V
V DD1 = 3V, VDD2 = 4.3V
V OH = 50mV
V DD1 = 3V, VDD2 = 4.3V
V OL = 50mV
Input stability
∆VO
V DD = 3V to 12V
—
50
—
mV*
Load stability
∆VO
IL = 10mA to 100mA
—
50
—
mV*
Input voltage level
VIH
—
0.8VDD1
—
—
V
VIL
—
—
—
0.2VDD1
V
at POFFX pin,
at VC pin
4–50
EPSON
S1F70000 Series
Technical Manual
S1F71200 Series
DC Characteristics
Parameter
Unless otherwise specified, Ta = 25°C.
Symbol
Rating
Conditions
Unit
Min.
Typ.
Max.
Input pin leak current
ILINH
VIN = VDD1
—
—
1.0
µA
at POFFX pin,
at VC pin
ILINL
VIN = VSS
—
—
–1.0
µA
TSS
SSCAP = 0.1µF
VDD1 = 3.0V, VC = VDD1
—
70
—
ms*
—
85
—
%*
Step-up soft start time
Step-up portion
conversion efficiency
EFFI
VDD1 = 3V, VC = VSS
Oscillation frequency
fOSC
VDD = 3V
(Measure it at the SWO pin.)
120
200
280
kHz
Overcurrent detection
voltage
IDET
VISENSE
0.10
0.15
0.20
V
∆VO
∆Topr
Ta = –30°C to +85°C
—
0.015
—
%/°C
Output voltage
temperature coefficient
* These values are available when external parts are used in the example of circuit connection shown on the attached sheet.
The characteristics vary with applicable parts. Select proper par ts after sufficient evaluation.
S1F70000 Series
Technical Manual
EPSON
4–51
S1F71200
Series
IO = 50mA
S1F71200 Series
EXAMPLE OF EXTERNAL CONNECTION OF REFERENCE CIRCUIT
Basic Circuit
Driver
SWO
Oscillator
Input voltage
VDD1
Overcurrent
detection
_ circuit
ISENSE
+
PWM
VDD2
SSC
Soft start
_
EXO
Output voltage
VSS
VO
Series
regulator
+
VSW
+
SRC
SWC
_
Error amplifier
VC
IREF
Reference
voltage
circuit
POFFX
VREF
4–52
EPSON
S1F70000 Series
Technical Manual
S1F71200 Series
Example of Parts Connection
D
CVSW
S1F71200
Nch
MOSTr
L
SWO
Input voltage
VDD1
ISENSE
CVDD1
RSENSE
VDD2
VBAT
SSC
PNPTr
EXO
Output voltage
VO
CVOUT
CSSC
VSS
VSW
S1F71200
Series
AC/DC
SWC
SRC
VC
IREF
RIREF
POFFX
VREF
CVREF
CVDD1
NchTr
L
D
CVSW
PNPTr
CVOUT
RIREF
CVREF
CSSC
RSENSE
47µF
47µH
Schottky
47µF
22µF
100kΩ
0.1µF
0.1µF
0.1Ω
Parts examples
(Sanyo 16SA47M)
(Hitachi HAT2037T)
(Sumida CR54)
(Rohm RB161L-40)
(Sanyo 16SA47M)
(2SA1242)
(Sanyo 10SL22M)
* Characteristics vary with applicable conditions and parts. Select proper parts after sufficient evaluation.
S1F70000 Series
Technical Manual
EPSON
4–53
S1F71200 Series
MECHANICAL DATA
Plastic SSOP2-16pin
Reference
D
D1
9
E
INDEX
HE
16
θ
8
θ2
R1
R
C
e
b
A1
A2
A
1
θ3
L2
L
L1
Lead type STD (SSOP2-16pin STD)
Symbol
E
D1
A
A1
A2
e
b
C
θ
L
L1
L2
HE
D
θ2
θ3
R
R1
Min.
4.2
6.4
1.4
0.26
0.1
0°
0.3
5.9
Dimension in Milimeters
Nom.
Max.
4.4
4.6
6.6
6.8
1.7
0.05
1.5
1.6
0.8
0.36
0.46
0.15
0.25
10°
0.5
0.7
0.9
0.4
6.2
6.5
7
Min.
(0.166)
(0.252)
(0.056)
(0.011)
(0.004)
(0°)
(0.012)
(0.233)
Dimension in Inches*
Nom.
Max.
(0.173)
(0.181)
(0.260)
(0.267)
(0.066)
(0.002)
(0.059)
(0.062)
(0.031)
(0.014)
(0.018)
(0.006)
(0.009)
(10°)
(0.020)
(0.027)
(0.035)
(0.016)
(0.244)
(0.255)
(0.275)
* for reference
4–54
EPSON
S1F70000 Series
Technical Manual
5. Voltage Detector
S1F77200Y Series
S1F77200Y Series CMOS Voltage Detectors
FEATURES
The S1F77200Y series products are non-adjusting voltage detectors being developed utilizing he base of the
CMOS silicon gate process.
This voltage detector consists of the reference voltage
circuit, voltage comparator, hysteresis circuit and output circuit, all operating on smaller current.
A voltage range to be detected is internally set on respective detectors. A wide variety of our standard products are grouped as shown below according to the output format employed for the voltage detector output pin.
The S1F77200Y series employs N-channel open drain
output approach. And the S1F77210Y series and S1F
77220Y series employ the CMOS output and P-channel
output, respectively.
The package used is the SOT89-3 pin plastic package.
Our voltage detectors are used for determining battery
life, and also for monitoring supply voltage fed to microcomputers and LSI systems.
• Full lineups: 19 types are prepared for the detection
range between 2.0V to 5.0V.
For the detection range from 0.8V to 2.5V, 7 types
are available (products designed for lower voltage
detection).
• Low operating current: Typ. 2.0 µA (VDD = 5.0V).
• Low operating voltage: 1.5V at minimum.
• Absolute maximum rated voltage: 15V maximum.
• Highly stable built-in reference voltage source: Typ.
1.0V.
• Better temperature characteristics of output voltage:
Typ. -100ppm/°C.
S1F77200Y
Series
DESCRIPTION
S1F70000 Series
Technical Manual
EPSON
5–1
S1F77200Y Series
LINEUP
Table 5-1
Product
Voltage detectable
Output type
Output phase
Min.
Typ. Max.
Less than VDET VDET or above
S1F77210Y1C0
2.10
2.15
2.20
CMOS
Low level
High level
S1F77210Y1P0
2.20
2.25
2.30
CMOS
Low level
High level
S1F77210Y1S0
2.30
2.35
2.40
CMOS
Low level
High level
S1F77210Y1E0
2.50
2.55
2.60
CMOS
Low level
High level
S1F77210Y1F0
2.60
2.65
2.70
CMOS
Low level
High level
S1F77210Y1R0
2.73
2.80
2.87
CMOS
Low level
High level
S1F77210Y1G0
2.93
3.00
3.07
CMOS
Low level
High level
S1F77210Y1H0
3.13
3.20
3.27
CMOS
Low level
High level
S1F77210Y130
3.43
3.50
3.57
CMOS
Low level
High level
S1F77210Y1T0
3.90
4.00
4.10
CMOS
Low level
High level
S1F77210Y1M0
4.10
4.20
4.30
CMOS
Low level
High level
S1F77210Y1J0
4.30
4.40
4.50
CMOS
Low level
High level
S1F77210Y120
4.50
4.60
4.70
CMOS
Low level
High level
S1F77210Y1K0
4.70
4.80
4.90
CMOS
Low level
High level
S1F77210Y1L0
4.90
5.00
5.10
CMOS
Low level
High level
S1F77210Y2C0
2.10
2.15
2.20
CMOS
High level
Low level
S1F77210Y2F0
2.60
2.65
2.70
CMOS
High level
Low level
Table 5-2
Product
Voltage detectable
Output type
Output phase
Min.
Typ. Max.
S1F77200Y1T0
3.90
4.00
4.10
N ch Open Drain
Low level
Hi–Z
S1F77200Y1F0
2.60
2.65
2.70
N ch Open Drain
Low level
Hi–Z
S1F77200Y1C0
2.10
2.15
2.20
N ch Open Drain
Low level
Hi–Z
S1F77200Y1N0
1.85
1.90
1.95
N ch Open Drain
Low level
Hi–Z
S1F77200Y1B0
1.10
1.15
1.20
N ch Open Drain
Low level
Hi–Z
S1F77200Y1Y0
1.05
1.10
1.15
N ch Open Drain
Low level
Hi–Z
S1F77200Y1A0
1.00
1.05
1.10
N ch Open Drain
Low level
Hi–Z
S1F77200Y1V0
0.90
0.95
1.00
N ch Open Drain
Low level
Hi–Z
S1F77220Y2D0
1.20
1.25
1.30
P ch Open Drain
High level
Hi–Z
5–2
Less than VDET VDET or above
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
BLOCK DIAGRAM
S1F77200Y1*0 Type
S1F77200Y2*0 Type
VDD
(2pin)
VDD
(2pin)
+
T
—
T
T
+
—
T
OUT
(1pin)
OUT
(1pin)
VREF
VREF
VSS
(3pin)
VSS
(3pin)
S1F77210Y1*0 Type
S1F77210Y2*0 Type
VDD
(2pin)
VDD
(2pin)
+
T
—
T
OUT
(1pin)
T
T
+
—
OUT
(1pin)
+
OUT
(1pin)
VREF
VREF
VSS
(3pin)
VSS
(3pin)
S1F77220Y1*0 Type
VDD
(2pin)
VDD
(2pin)
+
T
—
T
T
OUT
(1pin)
—
T
VREF
VREF
VSS
(3pin)
VSS
(3pin)
Note: A different code can be employed for the ones preceded by * marking depending on their detecting
voltage specification.
S1F70000 Series
Technical Manual
EPSON
5–3
S1F77200Y
Series
S1F77220Y2*0 Type
S1F77200Y Series
PIN DESCRIPTIONS
Pin No. Pin name
Description
1
OUT
Voltage detection output pin
2
VDD
Input voltage pin (positive side)
3
VSS
Input voltage pin (negative side)
PIN ASSIGNMENTS
SOT89-3pin
1
2
3
FUNCTIONAL DESCRIPTIONS
The S1F77200Y series has the circuit configuration as
shown in the figure below. For the detection, divided
potential (VREG) across the resistors inserted across the
power supply and the reference voltage (VREF) generated on the IC are entered to the voltage comparator.
Since the voltage comparator is designed to detect a target voltage even when potential difference between
VREG and Vref minute, hysteresis is added so that the
comparator may not fail due to noise on the power supply and such. In the example shown in the figure below,
detection voltage (VDET) for the input voltage drop and
relief voltage (VREL) for the increased input voltage are
set based the following formula.
Detection voltage: VDET =
R1+R2+R3
• VREF
R2+R3
Relief voltage:
R1+R2+R3
• VREF
R3
VREL =
VDD
(2pin)
R1
(VREG)
+
T
R2
—
T
OUT
(1pin)
VREF
R3
VSS
(3pin)
5–4
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
The following figures show the input and output characteristics of the S1F77200Y series.
OUT
OUT
VHYS
VDET: Detection voltage
VREL: Relief voltage
VDET: Detection voltage
VREL: Relief voltage
0
VHYS
0
VDD(V1)
VDET VREL
Operating voltage
lower limit
VDD(V1)
0
0
VDET VREL
Operating voltage
lower limit
Operating voltage
upper limit
* *0 Type]
Operating voltage
upper limit
* *0 Type
[S1F772 0Y1
S1F772 0Y2
Note: The above input/output characteristics assumes that the pull up resistor is connected to the output pin for
the S1F77200Y series. For the S1F77220 series, it assumes that the pull down resistor is connected
between the OUT and V DD pins.
If the input voltage that is applied between VDD and VSS terminals drops below the lower limit of voltage
for IC operation, the output condition of the OUT terminal may become unsteady.
Ensure to prevent problems from occurring in circuit operation.
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage range
Symbol
Rating
Unit
VDD – VSS
15
V
Output voltage
15 to VSS – 0.3
(S1F77200)
VO
S1F77200Y
Series
VDD + 0.3 to VSS – 0.3
(S1F77210)
V
VDD + 0.3 to VDD – 15
(S1F77220)
Output current
IO
50
mA
Allowable dissipation
PD
200
mW
Topr
–40 to +85
°C
Operating temperature
–30 to +85
(designed for lower voltage operation)
Storage temperature
Tstg
–65 to +150
˚C
Soldering temperature
and time
Tsol
260 · 10
(at leads)
˚C · s
S1F70000 Series
Technical Manual
EPSON
5–5
S1F77200Y Series
ELECTRIC CHARACTERISTICS
S1F77210Y1C0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
2.10
2.15
2.20
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.05
0.10
0.15
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 3.0V
OUT = 2.7V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
TPHL
ppm/°C
–1.00 –0.25
mA
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1P0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
2.20
2.25
2.30
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.05
0.10
0.15
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 3.0V
OUT = 2.7V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
5–6
TPHL
ppm/°C
–1.00 –0.25
mA
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
S1F77210Y1S0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
2.30
2.35
2.40
V
VHYS = VREL – VDET
0.05
0.10
0.15
V
—
2.00
5.00
µA
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 3.0V
OUT = 2.7V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
ppm/°C
–1.00 –0.25
mA
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1E0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
2.50
2.55
2.60
V
VHYS = VREL – VDET
0.05
0.10
0.15
V
—
2.00
5.00
µA
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 3.0V
OUT = 2.7V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
S1F70000 Series
Technical Manual
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
S1F77200Y
Series
Parameter
ppm/°C
–1.00 –0.25
mA
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
5–7
S1F77200Y Series
S1F77210Y1F0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
2.60
2.65
2.70
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.05
0.10
0.15
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 3.0V
OUT = 2.7V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
TPHL
ppm/°C
–1.00 –0.25
mA
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1R0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
2.73
2.80
2.87
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.05
0.10
0.15
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 3.0V
OUT = 2.7V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
5–8
TPHL
ppm/°C
–1.00 –0.25
mA
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
S1F77210Y1G0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
2.93
3.00
3.07
V
VHYS = VREL – VDET
0.09
0.15
0.21
V
—
2.00
5.00
µA
VDD = 4.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 4.0V
OUT = 3.6V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
ppm/°C
–1.60 –0.40
mA
0.20
1.00
—
mA
VDD = 4V→3V
Ta = 25°C
—
8
40
µs
VDD = 4V→3V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1H0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
3.13
3.20
3.27
V
VHYS = VREL – VDET
0.09
0.15
0.21
V
—
2.00
5.00
µA
VDD = 4.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 4.0V
OUT = 3.6V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
S1F70000 Series
Technical Manual
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
S1F77200Y
Series
Parameter
ppm/°C
–1.60 –0.40
mA
0.20
1.00
—
mA
VDD = 4V→3V
Ta = 25°C
—
8
40
µs
VDD = 4V→3V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
5–9
S1F77200Y Series
S1F77210Y130
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
3.43
3.50
3.57
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.09
0.15
0.21
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 4.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 4.0V
OUT = 3.6V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
TPHL
ppm/°C
–1.60 –0.40
mA
0.20
1.00
—
mA
VDD = 4V→3V
Ta = 25°C
—
8
40
µs
VDD = 4V→3V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1T0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
3.90
4.00
4.10
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.13
0.20
0.27
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 5.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 5.0V
OUT = 4.5V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
5–10
TPHL
ppm/°C
–2.00 –0.50
mA
0.20
1.00
—
mA
VDD = 5V→4V
Ta = 25°C
—
8
40
µs
VDD = 5V→4V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
S1F77210Y1M0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
4.10
4.20
4.30
V
VHYS = VREL – VDET
0.13
0.20
0.27
V
—
2.00
5.00
µA
VDD = 5.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 5.0V
OUT = 4.5V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
ppm/°C
–2.00 –0.50
mA
0.20
1.00
—
mA
VDD = 5V→4V
Ta = 25°C
—
8
40
µs
VDD = 5V→4V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1J0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
4.30
4.40
4.50
V
VHYS = VREL – VDET
0.13
0.20
0.27
V
—
2.00
5.00
µA
VDD = 5.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 5.0V
OUT = 4.5V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
S1F70000 Series
Technical Manual
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
ppm/°C
–2.00 –0.50
mA
0.20
1.00
—
mA
VDD = 5V→4V
Ta = 25°C
—
8
40
µs
VDD = 5V→4V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
5–11
S1F77200Y
Series
Parameter
S1F77200Y Series
S1F77210Y120
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
4.50
4.60
4.70
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.08
0.15
0.22
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 5.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 5.0V
OUT = 4.5V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
TPHL
ppm/°C
–2.00 –0.50
mA
0.20
1.00
—
mA
VDD = 5V→4V
Ta = 25°C
—
8
40
µs
VDD = 5V→4V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1K0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
4.70
4.80
4.90
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.13
0.20
0.27
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 5.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 5.0V
OUT = 4.5V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
Detection voltage
response time
5–12
TPHL
ppm/°C
–2.00 –0.50
mA
0.20
1.00
—
mA
VDD = 5V→4V
Ta = 25°C
—
8
40
µs
VDD = 5V→4V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
S1F77210Y1L0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
4.90
5.00
5.10
V
VHYS = VREL – VDET
0.13
0.20
0.27
V
—
2.00
5.00
µA
VDD = 6.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 6.0V
OUT = 5.4V
—
Low level output current
IOL
VDD = 2.0V
OUT = 0.2V
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
ppm/°C
–2.40 –0.60
mA
0.20
1.00
—
mA
VDD = 6V→4V
Ta = 25°C
—
8
40
µs
VDD = 6V→4V
Ta = –30°C to +85°C
—
—
200
µs
S1F77210Y1C0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Conditions (VSS = 0.0V)
Min.
—
12.0
V
Ta = 25°C
2.10
2.15
2.20
V
VHYS = VREL – VDET
0.05
0.10
0.15
V
—
2.00
5.00
µA
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
IOH
VDD = 2.0V
OUT = 1.8V
—
Low level output current
IOL
VDD = 3.0V
OUT = 0.3V
S1F70000 Series
Technical Manual
TPHL
Unit
1.50
High level output current
Detection voltage
response time
Typ. Max.
ppm/°C
–0.40 –0.10
mA
0.50
2.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
5–13
S1F77200Y
Series
Parameter
S1F77200Y Series
S1F77210Y1F0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
2.60
2.65
2.70
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.05
0.10
0.15
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
VDD = 3.0V
∆VDET
VDET
–300 –100 +100
High level output current
IOH
VDD = 2.0V
OUT = 1.8V
—
Low level output current
IOL
VDD = 3.0V
OUT = 0.3V
Detection voltage
response time
TPHL
ppm/°C
–0.40 –0.10
mA
0.50
2.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
S1F77200Y1T0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.50
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
3.90
4.00
4.10
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.13
0.20
0.27
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
5–14
VDD = 5.0V
∆VDET
VDET
IOL
TPHL
–300 –100 +100
VDD = 2.0V
OUT = 0.2V
ppm/°C
0.20
1.00
—
mA
VDD = 5V→4V
Ta = 25°C
—
8
40
µs
VDD = 5V→4V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
S1F77200Y1F0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
Conditions (VSS = 0.0V)
TPHL
Typ. Max.
Unit
1.50
—
12.0
V
Ta = 25°C
2.60
2.65
2.70
V
VHYS = VREL – VDET
0.05
0.10
0.15
V
—
2.00
5.00
µA
VDD = 3.0V
∆VDET
VDET
IOL
Min.
–300 –100 +100
VDD = 2.0V
OUT = 0.2V
ppm/°C
0.20
1.00
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
S1F77200Y1C0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
S1F70000 Series
Technical Manual
Conditions (VSS = 0.0V)
TPHL
Typ. Max.
Unit
0.80
—
10.0
V
Ta = 25°C
2.10
2.15
2.20
V
VHYS = VREL – VDET
0.05
0.10
0.15
V
—
2.00
5.00
µA
VDD = 3.0V
∆VDET
VDET
IOL
Min.
–300 –100 +100
ppm/°C
VDD = 1.5V
OUT = 0.15V
0.15
0.75
—
mA
VDD = 3V→2V
Ta = 25°C
—
8
40
µs
VDD = 3V→2V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
5–15
S1F77200Y
Series
Parameter
S1F77200Y Series
S1F77200Y1N0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
0.80
—
10.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
1.85
1.90
1.95
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.03
0.05
0.08
V
Operating current
IDD
—
2.00
5.00
µA
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
VDD = 3.0V
∆VDET
VDET
IOL
TPHL
–300 –100 +100
ppm/°C
VDD = 1.5V
OUT = 0.15V
0.15
0.75
—
mA
VDD = 2V→1V
Ta = 25°C
—
8
40
µs
VDD = 2V→1V
Ta = –30°C to +85°C
—
—
200
µs
S1F77200Y1B0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
0.80
—
10.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
1.10
1.15
1.20
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.03
0.05
0.08
V
Operating current
IDD
—
1.50
4.00
µA
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
5–16
VDD = 1.5V
∆VDET
VDET
IOL
TPHL
–300 –100 +100
VDD = 0.8V
OUT = 0.16V
ppm/°C
0.05
0.40
—
mA
VDD = 1.5V→0.8V
Ta = 25°C
—
8
40
µs
VDD = 1.5V→0.8V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
S1F77200Y1Y0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
Conditions (VSS = 0.0V)
TPHL
Typ. Max.
Unit
0.80
—
10.0
V
Ta = 25°C
1.05
1.10
1.15
V
VHYS = VREL – VDET
0.03
0.05
0.08
V
—
1.50
4.00
µA
VDD = 1.5V
∆VDET
VDET
IOL
Min.
–300 –100 +100
VDD = 0.8V
OUT = 0.16V
ppm/°C
0.05
0.40
—
mA
VDD = 1.5V→0.8V
Ta = 25°C
—
8
40
µs
VDD = 1.5V→0.8V
Ta = –30°C to +85°C
—
—
200
µs
S1F77200Y1A0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Symbol
Operating voltage
VDD
Detection voltage
VDET
Hysteresis width
VHYS
Operating current
IDD
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
S1F70000 Series
Technical Manual
Conditions (VSS = 0.0V)
TPHL
Typ. Max.
Unit
0.80
—
10.0
V
Ta = 25°C
1.00
1.05
1.10
V
VHYS = VREL – VDET
0.03
0.05
0.08
V
—
1.50
4.00
µA
VDD = 1.5V
∆VDET
VDET
IOL
Min.
–300 –100 +100
VDD = 0.8V
OUT = 0.16V
ppm/°C
0.05
0.40
—
mA
VDD = 1.5V→0.8V
Ta = 25°C
—
8
40
µs
VDD = 1.5V→0.8V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
5–17
S1F77200Y
Series
Parameter
S1F77200Y Series
S1F77200Y1V0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
0.80
—
10.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
0.90
0.95
1.00
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.03
0.05
0.08
V
Operating current
IDD
—
1.50
4.00
µA
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
VDD = 1.5V
∆VDET
VDET
IOL
TPHL
–300 –100 +100
VDD = 0.8V
OUT = 0.16V
ppm/°C
0.05
0.40
—
mA
VDD = 1.5V→0.8V
Ta = 25°C
—
8
40
µs
VDD = 1.5V→0.8V
Ta = –30°C to +85°C
—
—
200
µs
S1F77220Y2D0
(Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter
Symbol
Conditions (VSS = 0.0V)
Min.
Typ.
Max.
Unit
1.5
—
12.0
V
Operating voltage
VDD
Detection voltage
VDET
Ta = 25°C
1.20
1.25
1.30
V
Hysteresis width
VHYS
VHYS = VREL – VDET
0.03
0.05
0.08
V
Operating current
IDD
—
1.50
4.00
µA
Detection voltage
temperature characteristics
Low level output current
Detection voltage
response time
5–18
VDD = 3.0V
∆VDET
VDET
IOL
TPHL
–300 –100 +100
ppm/°C
VDD = 1.5V
OUT = 0.64V
—
VDD = 1.5V→0.8V
Ta = 25°C
—
8
40
µs
VDD = 1.5V→0.8V
Ta = –30°C to +85°C
—
—
200
µs
EPSON
–0.03 –0.06
mA
S1F70000 Series
Technical Manual
S1F77200Y Series
EXAMPLES OF EXTERNAL CONNECTION
Input voltage (+)
(2pin)
VDD
(1pin)
S1F77210Y
OUT
Series
Voltage detection output
VSS
(3pin)
Input voltage (—)
Power supply for pull up resistor
Input voltage (+)
(2pin)
VDD
S1F77210Y
OUT
Series
(1pin)
Voltage detection output
VSS
(3pin)
Input voltage (—)
Input voltage (+)
(2pin)
VDD
(1pin)
S1F77210Y
OUT
Series
Voltage detection output
S1F77200Y
Series
VSS
(3pin)
Input voltage (—)
Power supply for
pull down resistor
S1F70000 Series
Technical Manual
EPSON
5–19
S1F77200Y Series
SAMPLE CIRCUITS (S1F77210Y Series)
CR timer circuit
When the S1F77210Y circuit configured as shown in Figure 5-14, it can be used as a CR timer circuit.
VDD
R
VDD
S1F77210Y
VO
OUT
C
VSS
Figure 5-14 CR timer circuit
Battery backup circuit
The following is an example of the supply voltage switching circuit for the battery backup supply configured featuring the S1F77210Y series.
PNP transistor
VDD
VCC
VBAT
VDD
S1F77210Y
VO
NPN transistor
VSS
Enable signal
Figure 5-15 Battery backup circuit
5–20
EPSON
S1F70000 Series
Technical Manual
S1F77200Y Series
SAMPLE CIRCUITS (S1F77200Y Series)
CR timer circuit
When the S1F77200Y circuit is configured as shown in Figure 5-16, it can be used as a CR timer circuit.
VDD
VDD
R
VDD
S1F77200Y
OUT
VO
C
VSS
Figure 5-16 CR timer circuit
Battery backup circuit
The following is an example of the supply voltage switching circuit for the battery backup configured featuring the
S1F77200Y series.
PNP transistor
VDD
VCC
VBAT
VDD
VO
NPN transistor
S1F77200Y
Series
S1F77200Y
VSS
Enable signal
Figure 5-17 Battery backup circuit
S1F70000 Series
Technical Manual
EPSON
5–21
S1F77200Y Series
PRECAUTIONS
Short cut current on the S1F77210 (CMOS output voltage detector)
Since the S1F77200Y series employs CMOS output, as an input voltage nears the detection voltage range, short cut
current is flown between VDD and VSS. The short cut current is voltage sensitive, and approximately 2 mA flows at
5V level or so (our products are not check for short cut current after volume production has been started).
Although duration of the short cut current depends on operating conditions (such as type the circuit used and supply
impedance), normally it is assumed to continue several usec to several dozens of usec.
If a load with high impedance is inserted across the power supply, oscillation can be introduced by the short cut
current. In order to reject this trouble, the following measures should be considered:
(1) Reduce the resistance value.
(2) Insert a capacitor.
(3) Replace with the S1F77200Y series (it employs N-channel open drain approach).
S1F
77210Y
5–22
EPSON
S1F70000 Series
Technical Manual
6. Appendix
Appendix
ABSOLUTE MAXIMUM RATINGS
POWER DISSIPATION CONDITIONS
Absolute maximum ratings are the maximum physical
and electrical ratings of a device beyond which performance degradation or damage will occur. Always
check circuit conditions before using a device to avoid
exceeding these ratings. Typically, absolute maximum
ratings include the following parameters.
To prevent damage always consider the following
points when designing with power regulation ICs.
1. A precise thermal design is necessary to ensure
adequate heat dissipation.
Steady state applied voltages, noise, reverse voltage
transients and power-on-transients can degrade or
damage the integrated circuit if they exceed the
maximum power supply voltage rating.
2. Input signal voltage
Input signals exceeding this rate can damage input
protection circuits
3. Output current
Generally, specifications are not set for CMOS
devices with small output currents. Devices that
provide large drive currents will have output current specifications.
3
25 x 80 x 0.7 mm3 ceramic substrate
Power dissipation (W)
1. Power supply voltage
The following figure shows the power dissipation
capacity in relation to ambient temperature.
12.5 x 40 x 0.7 mm3
ceramic substrate
2
12.5 x 20 x 0.7 mm3
ceramic substrate or
1.7 mm thick glass-epoxy
substrate with 1 cm2
collector surface area
1
0.5 mm thick substrate
0
50
4. Power dissipation
The maximum power dissipation of a device is
limited by its construction and package type.
Maximum output current limits are set to prevent
thermal damage.
100
150
Ambient temperature (˚C)
The following figure shows the cost and reliability
of a product and is significant when designing a
system.
5. Operating temperature range
The temperature range for normal device operation
with no change in performance characteristics.
Reliability
Cost
The temperature range for device storage with no
degradation or damage. This specification is particularly important when ICs are being transported
by air.
Reliability
Cost
6. Storage temperature range
7. Soldering temperature and the duration
RECOMMENDED OPERATING
CONDITIONS
Appendix
The maximum soldering temperature and the time
for which the leads can be at this temperature.
Junction temperature
Recommended operating conditions are the conditions
under which a device functions correctly. These
include power supply voltage, input conditions and
output current. These conditions are sometimes listed
as part of the electrical characteristics.
ELECTRICAL CHARACTERISTICS
Electrical characteristics specify the DC and AC
characteristics of a device under the worst measurement conditions.
S1F70000 Series
Technical Manual
EPSON
6–1
Appendix
The following figure shows a thermal design
model which can be used to determine heatsink
capacity.
Junction
temperature
Tj
θjc
Case
temperature
Tc
Heat
source
2. Ensure that the regulator common pin is a single-point ground to prevent earth loops. Make
ground lines as thick and short as possible. Use the
specified bypass capacitors for inputs and outputs.
If there is a switching load, use a tantalum or
ceramic capacitor, as these devices have a high
frequency response between the power supply and
ground.
θcs
Heatsink
temperature
Ts
θsa
Ambient
temperature
Ta
PARAMETER SUMMARY
Symbol
Symbol
Parameter
CD
Drain capacitance
CF8
Field slew capacitance
IQ
Quiescent current
CG
Gate capacitance
IR
Reverse current
CI
Input capacitance
I SWQ
Switching transistor leakage current
Cn
Capacitance
KI
Output voltage temperature gradient
CT
Crosstalk
PD
Power dissipation
CTn
Temperature gradient
Peff
Voltage multiplication efficiency
f CLK
Clock frequency
f max
Maximum clock frequency
RL
Load resistance
fOSC
Oscillator frequency
RO
Output impedance
Field through (channel OFF)
RON
ON resistance
I BSQ
Backup switching leakage current
ROSC
Oscillator network resistor
I DDO
Operating current
RRV
Stabilization voltage sensing resistor
I DDS
Standby current
RRVn
Reference voltage
IDD
Power supply current
RSAT
Stabilization output saturation resistance
I IH
High-level input current
RSWON
IIL
Low-level input current
Ta
Ambient temperature
ILKI
input leakage current
tAE
Minimum pulsewidth
IMAX
Maximum current
t HA
Address hold time
IO
Output current
tHD
Data hold time
IOH
High-level output current
THD
IOL
Low-level output current
θjn
FT
IOPR1
6–2
Parameter
I OPR2
RBSON
Multiplier circuit power dissipation
tMRR
EPSON
Stabilization circuit power dissipation
Backup switch ON resistance
Switching transistor ON resistance
Total harmonic distortion
Thermal resistance
Memory reset recovery time
S1F70000 Series
Technical Manual
Appendix
Symbol
Parameter
Symbol
Parameter
Memory reset
VI
Input voltage
Topr
Operating temperature
VIH
High-level input voltage
t PAE
Propagation delay
VIL
Low-level input voltage
tPHL
Low-level transition time
VI
Input voltage
tPLH
High-level transition time
VO
Output voltage
tPLS
Propagation delay
Voff
Input offset voltage
tPOP
Propagation delay
Vop+
Input voltage range
t PS
Propagation delay
VOPMAX
Maximum output voltage
t SA
Address setup time
VOPMIN
Minimum output voltage
tSD
Data setup time
VREF
Reference voltage
Tsol
Soldering temperature and time
VREG
Output voltage (regulated)
Tstg
Storage temperature
VSS
Power supply voltage
VDD
Power supply voltage
VSSn
Power supply voltage
VDET
Detection voltage
VSTA
Oscillator start-up voltage
VF
Forward voltage
VSTP
Oscillator shut-down voltage
Appendix
tMR
S1F70000 Series
Technical Manual
EPSON
6–3
Appendix
MECHANICAL DATA
Plastic DIP–8pin
Plastic DIP–14pin
9.7Max.
19.7Max.
9.1±0.1
19.0±0.1
8
5
14
6.3±0.1
6.4±0.1
INDEX
1
8
4
1
7.62
7
3.0Min. 4.4±0.1
0.8±0.1
3.0Min. 4.4±0.1
0.8±0.1
1.3
+0.03
0.46±0.1
0.25 –0.01
2.54
+0.03
0.46±0.1
±0.25
0.25 –0.01
2.54
±0.25
7.62
1.5
7.62 to 9.02
7.62 to 9.02
Unit: mm
Plastic QFP5–48pin
Unit: mm
Plastic QFP12-48pin
19.6±0.4
14±0.1
9.0±0.4
7.0±0.1
36
48
0.35±0.1
37
24
20±0.1
INDEX
25
7.0±0.1
9.0±0.4
1
0.8
INDEX
48
24
25
13
1
12
0.18±0.1
1.7Max.
2.7±0.1
0.5
0.15±0.05
1.5±0.3
2.8
0.5±0.2
Unit: mm
Plastic SOP3–8pin
1.0
5.0±0.2
8
6.8±0.4
4
0.15
0.4±0.1
1.6
0.15
0.35±0.1
0.15±0.1
0.55
1.65
1.27
1.75
1.5±0.15
4
0.2±0.1
0.8
Unit: mm
6–4
5.0±0.2
6.0±0.4
3.9±0.2
INDEX
1
1.27
5
5
INDEX
1
Unit: mm
Plastic SOP4–8pin
5.0±0.2
8
0.125±0.05
EPSON
Unit: mm
S1F70000 Series
Technical Manual
Appendix
Plastic SOP5–14pin
SOT 89–3pin
4.5±0.1
1.8Max.
0.44Max.
0.4
10.5Max.
10.2±0.2
0.8
1
1
7
2
3
1.5
1.5
Min.
8.0±0.3
INDEX
2.5±0.1
4.25Max.
8
5.5±0.2
14
0.44Max.
0.4±0.1
1.5±0.1
2.3
0.15±0.1
0.4
0.48Max.
0.48Max.
0.53Max.
Unit: mm
Plastic SOP2–28pin
15.5Max.
18.1Max.
15.2±0.1
17.8±0.1
1
14
8.4±0.1
2.5±0.15
2.7
0.4±0.1
0.2
0.15±0.05
1.0
1.27
0.4±0.1
Unit: mm
Plastic SSOP2–16pin
Plastic SSOP1–20pin
6.5±0.1
20
1
1.2Max.
1.5
1.7Max.
0°
10°
0.5±0.2
0.65
0.22±0.1
0.15
0°
10°
0.5±0.2
1
0.9
Unit: mm
S1F70000 Series
Technical Manual
10
0.15
0.05
0.36±0.1
6.4±0.3
INDEX
8
0.8
11
0.1 1.05
INDEX
6.2±0.3
4.4±0.2
9
4.4±0.1
6.6±0.2
1
1.0
Unit: mm
6.8±0.2
16
0.15±0.05
Appendix
1.27
15
2.5±0.15
12
28
2.7
1
8.4±0.1
13
11.8±0.3
24
11.8±0.3
Plastic SOP2-24pin
Unit: mm
0.2
1.27±0.1
0.1±0.08 2.2Max.
6.8
EPSON
Unit: mm
6–5
Appendix
EMBOSS CARRIER TAPING STANDARD (SOT89-3pin)
TAPING INFORMATION
The emboss carrier taping standard is shown in the
following table and figure. This standard conforms to
the EIAJ RCI00B electronic parts taping specification.
Each tape holds 1,000 devices.
Dimension code
Dimensions/angles (mm/°)
Dimension code
Dimensions/angles (mm/°)
A
5.0
P2
2.0 ±0.05
B
4.6
T
0.3
D
1.5 +0.1, –0.05
T2
2.3
E
1.50 ±0.1
W
12.0 ±0.2
F
5.65 ±0.05
W1
9.5
P1
8.0 ±0.1
θ
30°Max.
P0
4.0 ±0.1
Note
The tape thickness is 0.1 mm Max.
T
D
Feeder hole
Cross section with device position
E
A
F
W
B
Device cavity
θ
θ
Travel direction
T2
P1
There are no joints in either the cover or carrier tapes.
Less than 0.2% of the total device count is comprised
of non-sequential blanks. There are no sequential
6–6
P2
P0
blanks. This does not apply to the tape leader and
trailer.
EPSON
S1F70000 Series
Technical Manual
Appendix
REEL SPECIFICATIONS
The reel specifications are shown in the following table
and figure. The reel is made of paperboard.
Dimension code
Dimensions (mm)
A
178 ±2.0
B
80 ±1.0
C
13.0 ±0.5
D
21.0 ±1.0
E
2.0 ±0.5
W
14.0 (See note.)
W1
1.5 ±0.1
W2
17 (See note.)
r
1.0
W2
120˚
120˚
C
E
B A
D
r
W
W1
Note
W and W2 are measured at the reel core.
DEVICE POSITIONING
T1
S1F70000 Series
Technical Manual
Appendix
Small molded power IC devices are positioned as
shown in the following figure.
T2
EPSON
6–7
Appendix
EMBOSS CARRIER TAPING STANDARD (SOP3-8pin )
TAPING INFORMATION
The emboss carrier taping standard is shown in the
following table and figure. This standard conforms to
the EIAJ RCI009B electronic parts taping specification.
Each tape holds 2,000 devices.
Dimension code
Dimensions/angles (mm/°)
Dimension code
Dimensions/angles (mm/°)
A
6.7
P2
2.0 ±0.05
B
5.4
T
0.3 ±0.05
D
1.55 +0.05, –0
T2
2.5
D1
1.55 ±0.05
W
12.0 ±0.3
E
1.75 ±0.1
W1
9.5
F
5.5 ±0.1
θ
15°Max.
P1
8.0 ±0.1
P0
4.0 ±0.1
Note
The tape thickness is 0.1 mm Max.
P0
T
D
P1
E
A
F
W
W1
B
θ
θ
T2
P1
Index mark
D1
TE2
Travel direction
There are no joints in either the cover or carrier tapes.
Less than 0.2% of the total device count is comprised
of non-sequential blanks. There are no sequential
6–8
blanks. This does not apply to the tape leader and
trailer.
EPSON
S1F70000 Series
Technical Manual
Appendix
REEL SPECIFICATIONS
W2
The reel specifications are shown in the following table
and figure. The reel is made of paperboard.
Dimension code
Dimensions (mm)
A
330 ±2.0
B
80 ±1.0
C
13.0 ±0.5
D
21.0 ±0.5
E
2.0 ±0.5
W
15.4 ±1.0 (See note.)
W1
2.0 ±0.5
W2
23.4 (See note.)
r
1.0
120˚
120˚
C
E
B A
D
r
W
W1
Note
W and W2 are measured at the reel core.
DEVICE POSITIONING
Appendix
Type B products are positioned so that the index mark
is on the sprocket hole side of the tape, as shown in the
following figure.
Travel direction
Index mark
S1F70000 Series
Technical Manual
EPSON
6–9
Appendix
Type F product are positioned so that the index mark
is on the opposite side to the sprocket holes, as shown
in the following figure.
Travel direction
Index mark
6–10
EPSON
S1F70000 Series
Technical Manual
Appendix
EMBOSS CARRIER TAPING STANDARD (SOP5-14pin )
TAPING INFORMATION
The emboss carrier taping standard is shown in the
following table and figure. This standard conforms to
the EIAJ RCI009B electronic parts taping specification.
Each tape holds 2,000 devices.
Dimension code
Dimensions (mm/ °)
Dimension code
Dimensions (mm/°)
A
8.4
P2
2.0 ±0.1
B
10.6
T
0.3 ±0.05
D0
1.55 ±0.05
T2
3.0
D1
1.55 ±0.05
W
16.0 ±0.3
E
1.75 ±0.1
W1
13.5
F
7.5 ±0.1
P1
12 ±0.1
P0
4.0 ±0.1
Note
The tape thickness is 0.1 mm Max.
P0
DIA D0
P2
T
E
F
A
W
B
W1
P1
DIA D1
There are no joints in either the cover or carrier tapes.
Less than 0.1% of the total device count is comprised
of non-sequential blanks. There are no sequential
S1F70000 Series
Technical Manual
blanks. This does not apply to the tape leader and
trailer.
EPSON
6–11
Appendix
T2
Appendix
REEL SPECIFICATIONS
The reel specifications are shown in the following table
and figure. The reel is made of paperboard.
Dimension code
Dimensions (mm)
A
330 ±2.0
B
80 ±1.0
C
13.0 ±0.5
D
21.0 ±1.0
E
2.0 ±0.5
W
14.0 ±1.5 (See note.)
W1
2.0 ±0.5
W2
20.5 max (See note.)
r
1.0
W2
120˚
120˚
C
E
B A
r
D
W
W1
Note
W and W2 are measured at the reel core.
DEVICE POSITIONING
Type B products are positioned so that the index mark
is on the sprocket hole side of the tape, as shown in the
following figure.
Index mark
6–12
Travel direction
EPSON
S1F70000 Series
Technical Manual
Appendix
Type F products are positioned so that the index mark
is on the opposite side to the sprocket holes, as shown
in the following figure.
Travel direction
Appendix
Index mark
S1F70000 Series
Technical Manual
EPSON
6–13
Appendix
EMBOSS CARRIER TAPING STANDARD (SOP2-24pin )
TAPING INFORMATION
The emboss carrier taping standard is shown in the
following table and figure. This standard conforms to
the EIAJ RCI009B electronic parts taping specification.
Each tape holds 1,000 devices.
Dimension code
Dimensions (mm)
Dimension code
Dimensions (mm)
A
12.4
P0
4.0 ±0.1
B
15.6
P2
2.0 ±0.1
D0
1.55 +0.1, –0
T
0.3 ±0.05
D1
2.0 +0.1, –0
T2
3.0 ±0.1
E
1.75 ±0.1
W
24 ±0.2
F
11.5 ±0.1
W1
21.5 Typ.
P1
16 ±0.1
Note
The tape thickness is 0.1 mm Max.
DIA D0
P0
P2
T
E
F
A
W
W1
B
DIA D1
P1
T2
There are no joints in either the cover or carrier tapes.
Less than 0.2% of the total device count is comprised
of non-sequential blanks. There are no sequential
blanks. This does not apply to the tape leader and
6–14
trailer. The tape tension should be approximately 10 N
(1 kgf). A label indicates the part name, quantity and
lot number.
EPSON
S1F70000 Series
Technical Manual
Appendix
Tape configuration
The tape configuration is shown in the following
figure. Blank sections are provided as a leader and
trailer, with 1,000 SOP2 packages fitted into the component mounting section between them. At the begin-
ning of the leader section there is an extra section of
tape which contains the cover tape only.
Finish
Trailer (open) > 40mm
Base
Lead (open) > 40mm
Start
Cover tape
only
Travel direction
S1F70000 Series
Technical Manual
EPSON
Appendix
Embossed
carrier
6–15
Appendix
REEL SPECIFICATIONS
The reel specifications are shown in the following table
and figure. The reel is made of conductive PVC.
Dimension code
Dimensions (mm)
A
330 ±2.0
B
80 ±1.0
C
13.0 ±0.5
D
21.0 ±1.0
E
2.0 ±0.5
W
24.4 +2, –0 (See note.)
W1
2.0 ±0.5
W2
31.4 Max. (See note.)
r
1.0
W2
120˚
120˚
C
E
B A
r
D
W
W1
Note
W and W2 are measured at the reel core.
DEVICE POSITIONING
Type B products are positioned so that the index mark
is on the sprocket hole side of the tape, as shown in the
following figure.
Index mark
6–16
EPSON
Travel direction
S1F70000 Series
Technical Manual
Appendix
Type F products are positioned so that the index mark
is on the opposite side to the sprocket holes, as shown
in the following figure.
Travel direction
Appendix
Index mark
S1F70000 Series
Technical Manual
EPSON
6–17
International Sales Operations
AMERICA
ASIA
EPSON ELECTRONICS AMERICA, INC.
HEADQUARTERS
EPSON (CHINA)CO.,LTD.
150 River Oaks Parkway
San Jose, CA 95134, U.S.A.
Phone : +1-408-922-0200
Fax : +1-408-922-0238
23F, Beijing Silver Tower 2# North RD DongSanHuan
ChaoYang District, Beijing,CHINA
Phone : 64106655
Fax : 64107319
SHANGHAI BRANCH
SALES OFFICES
West
1960 E. Grand Avenue
El Segundo, CA 90245, U.S.A.
Phone : +1-310-955-5300
Fax : +1-310-955-5400
4F, Bldg., 27, No. 69, Gui Qing Road
Caohejing, Shanghai, CHINA
Phone : 21-6485-5552
Fax : 21-6485-0775
EPSON HONG KONG LTD.
Central
101 Virginia Street, Suite 290
Crystal Lake, IL 60014, U.S.A.
Phone : +1-815-455-7630
Fax : +1-815-455-7633
20/F., Harbour Centre, 25 Harbour Road
Wanchai, Hong Kong
Phone : +852-2585-4600
Fax : +852-2827-4346
Telex : 65542 EPSCO HX
Northeast
301 Edgewater Place, Suite 120
Wakefield, MA 01880, U.S.A.
Phone : +1-781-246-3600
Fax : +1-781-246-5443
Southeast
3010 Royal Blvd. South, Suite 170
Alpharetta, GA 30005, U.S.A.
Phone : +1-877-EEA-0020 Fax : +1-770-777-2637
EUROPE
EPSON EUROPE ELECTRONICS GmbH
HEADQUARTERS
Riesstrasse 15
80992 Munich, GERMANY
Phone : +49- (0) 89-14005-0
Fax : +49- (0) 89-14005-110
DÜSSELDORF BRANCH OFFICE
Altstadtstrasse 176
51379 Leverkusen, GERMANY
Phone : +49- (0) 2171-5045-0 Fax : +49- (0) 2171-5045-10
EPSON TAIWAN TECHNOLOGY & TRADING LTD.
10F, No. 287,Nanking East Road, Sec. 3
Taipei
Phone : 02-2717-7360
Fax : 02-2712-9164
Telex : 24444 EPSONTB
HSINCHU OFFICE
13F-3, No.295, Kuang-Fu Road, Sec. 2
HsinChu 300
Phone : 03-573-9900
Fax : 03-573-9169
EPSON SINGAPORE PTE., LTD.
No. 1 Temasek Avenue, #36-00
Millenia Tower, SINGAPORE 039192
Phone : +65-6337-7911
Fax : +65-6334-2716
SEIKO EPSON CORPORATION
KOREA OFFICE
50F, KLI 63 Bldg., 60 Yoido-dong
Youngdeungpo-Ku, Seoul, 150-763, KOREA
Phone : 02-784-6027
Fax : 02-767-3677
UK & IRELAND BRANCH OFFICE
Unit 2.4, Doncastle House, Doncastle Road
Bracknell, Berkshire RG12 8PE, ENGLAND
Phone : +44- (0) 1344-381700 Fax : +44- (0) 1344-381701
FRENCH BRANCH OFFICE
1 Avenue de l’ Atlantique, LP 915 Les Conquerants
Z.A. de Courtaboeuf 2, F-91976 Les Ulis Cedex, FRANCE
Phone : +33- (0) 1-64862350 Fax : +33- (0) 1-64862355
GUMI OFFICE
6F,Good Morning Securities Bldg.,56,
Songjeong-Dong,Gumi-City,730-090,KOREA
Phone : 054-454-6027
Fax : 054-454-6093
SEIKO EPSON CORPORATION
ELECTRONIC DEVICES MARKETING DIVISION
IC Marketing Department
IC Marketing & Engineering Group
BARCELONA BRANCH OFFICE
Barcelona Design Center
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-(0)42-587-5816
Fax: +81-(0)42-587-5624
Edificio Testa, Avda. Alcalde Barrils num. 64-68
E-08190 Sant Cugat del Vallès , SPAIN
Phone : +34- 93-544-2490
Fax : +34-93-544-2491
ED International Marketing Department
Europe & U.S.A.
Scotland Design Center
ED International Marketing Department
Asia
Integration House,The Alba Campus
Livingston West Lothian,EH54 7EG,SCOTLAND
Phone : +44-1506-605040
Fax : +44-1506-605041
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-(0)42-587-5812
Fax: +81-(0)42-587-5564
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-(0)42-587-5814
Fax: +81-(0)42-587-5110
In pursuit of “Saving” Technology, Epson electronic devices.
Our lineup of semiconductors, liquid crystal displays and quartz devices
assists in creating the products of our customers’ dreams.
Epson IS energy savings.
NOTICE
No part of this material may be reproduced or duplicated in any from or by any means without the
written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material
without notics. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies
contained in this material or due to its application or use in any product or circuit and, further, there
is no repersesnation that this material is applicable to products requiring high level reliability, such as,
medical products. Moreover, no license to any intellectual property rights is granted by implication or
otherwise, and there is no representation or warranty that anything made in accordance with this
material will be free from any patent or copyright infringement of a third party. This material or
portions thereof may contain technology or the subject relating to strategic products under the control
of the Foreign Exchange and Foreign Trade Low of Japan and may require an export licenes from the
Ministry of International Trade and Industry or other approval from another government agency.
HD44103 is a registered trademark of Hitachi, Ltd.
All other product names mentioned herein are trademarks and/or registered trademarks of their
respective companies.
©SEIKO EPSON CORPORATION 2001, All rights reserved.
4.5mm
MF302-11
S1F70000 Series
Technical Manual
IEEE1394
POWER
SUPPLY
Controller
IC
S1R77801F00A
S1F70000
Series
Technical Manual
S1F70000 Series Technical Manual
ELECTRONIC DEVICES MARKETING DIVISION
EPSON Electronic Devices Website
http://www.epson.co.jp/device/
This manual was made with recycle paper,
and printed using soy-based inks.
First issue November,1990 U
Revised July,2002 in Japan H B
4.5mm
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