InGaP HBT Gain Block
PG671
InGaP HBT Gain Block
Features
Functional Diagram
Applications
5 - 4000MHz
Broadband Gain Block
15.5 dB Gain at 900MHz
Mobile Infrastructure
+18.0 dBm P1dB
Cellular, PCS, GSM, GPRS
+34.5 dBm Output IP3
WCDMA, WiBro
No need bias Resistor
W-LAN / DMB
Lead-free / Green / RoHS-
RFID/ Fixed Wireless
4
3
2
1
compliant SOT-89 Package
Function
Pin No.
RF IN
1
RF OUT / Bias
3
Ground
2,4
Description
The PG671 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The
amplifier features high linear performance, wideband operation and high reliability. The PG671 designed to
enable to stable performance over temperature using an internal active bias of temperature compensated circuit.
The PG671 operates from a single voltage supply and requires only two DC-blocking capacitors and a bias
inductor for operation. A bias resistor is not required allowing the device to be biased directly from a +5V supply
voltage. The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surfacemountable plastic SOT-89 packages. All devices are 100% RF and DC tested.
Specifications
Symbol
S21
S11
Parameters
Gain
Input Return Loss
S22
Output Return Loss
P1dB
Output Power @1dB
compression
OIP3
Output Third Order
intercept
Units
Freq.
Min.
Typ.
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
15.8
15.5
14.9
14.5
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
-18
-18
-14
-12
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
-11
-11
-11
-11
dBm
75 MHz
900 MHz
1900 MHz
2300 MHz
18.0
18.0
18.3
18.2
dBm
75 MHz
900 MHz
1900 MHz
2300 MHz
35.6
34.7
33.1
31.4
75 MHz
900 MHz
1900 MHz
2300 MHz
4.9
4.5
4.7
5.0
NF
Noise Figure
dB
V/I
Device voltage / current
V/mA
5.0/64
Rth
Thermal Resistance
°C/W
66
Max.
Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of 0dBm/tone separated by 1MHz.
http://www.prewell.com
1
Sep 2008
PG671
InGaP HBT Gain Block
Typical RF Performance for 1.9GHz Tuned Application Circuit
Supply Bias Voltage = 5V, Current= 65mA
Frequency
MHz
500
900
1500
1900
2300
3000
S21
dB
15.6
15.6
15.3
15.0
14.7
13.8
S11
dB
-15
-18
-16
-14
-13
-12
S22
dB
-10
-11
-11
-12
-12
-10
P1dB
dBm
18.1
18.0
18.1
18.4
18.2
17.4
OIP3(@0dBm)
dBm
35.1
34.8
34.1
33.2
31.5
30.0
Noise Figure
dB
4.7
4.5
4.5
4.7
5.0
5.3
Supply
Voltage
Gain vs. Frequency
21
56pF
33nH
RF IN
18
-5
15
-10
12
-15
o
+25 C_65mA
o
-40 C_62mA
o
+85 C_69mA
RF OUT
9
56pF
Input Return Loss
0
S11(dB)
Gain(dB)
1uF
56pF
6
0.0
0.5
1.0
1.5
2.0
2.5
o
+25 C
o
-40 C
o
+85 C
-20
-25
0.0
3.0
0.5
1.0
Frequency(GHz)
Output Return Loss
0
39
1.5
2.0
2.5
3.0
Frequency(GHz)
Output IP3 vs. Frequency
P1dB vs. Frequency
22
o
+25 C
o
-40 C
o
+85 C
20
-8
-12
P1dB(dBm)
36
OIP3(dBm)
S22(dB)
-4
33
30
18
16
o
o
-16
0.5
1.0
1.5
2.0
2.5
24
0.5
3.0
1.0
Frequency(GHz)
Output Power(dBm)/Gain(dB)
NF(dB)
4
3
o
+25 C
1.5
2.0
Frequency(GHz)
2.5
12
0.5
3.0
1.0
2.5
3.0
15
10
5
0
-20
Gain
Output Power
-15
-10
1.5
2.0
2.5
3.0
Frequency(GHz)
Output Power/Gain vs. Input Power @0.9GHz
5
1.0
2.0
Output Power/Gain vs. Input Power @1.9GHz
20
6
2
0.5
1.5
+25 C
o
-40 C
o
+85 C
Frequency(GHz)
NF vs. Frequency
7
14
-5
Input Power(dBm)
0
5
20
Output Power(dBm)/Gain(dB)
-20
0.0
27
+25 C
o
-40 C
o
+85 C
15
10
5
Gain
Output Power
0
-20
-15
-10
-5
0
5
Input Power(dBm)
http://www.prewell.com
2
Sep 2008
PG671
InGaP HBT Gain Block
Typical RF Performance for 50 – 500MHz Tuned Application Circuit
Supply Bias Voltage = 5V, Current= 65mA
Frequency
MHz
75
125
300
500
S21
dB
15.8
15.7
15.5
15.4
S11
dB
-18
-18
-18
-20
S22
dB
-11
-11
-11
-11
P1dB
dBm
18.1
18.0
18.2
18.1
OIP3(@0dBm)
dBm
35.7
35.6
35.0
36.0
Noise Figure
dB
4.9
5.0
5.3
5.3
Supply
Voltage
Gain vs. Frequency
20
1uF
Gain(dB)
18
10nF
820nH
RF IN
16
14
o
+25 C
o
-40 C
o
+85 C
RF OUT
12
10nF
10nF
10
0
100
200
300
400
500
600
Frequency(GHz)
Input Return Loss
0
Output Return Loss
0
o
+25 C
o
-40 C
o
+85 C
-4
-10
S22(dB)
S11(dB)
-5
-15
-8
-12
o
-20
+25 C
o
-40 C
o
+85 C
-16
-25
-20
0
100
200
300
400
500
600
0
100
200
300
400
500
600
Frequency(GHz)
Frequency(GHz)
http://www.prewell.com
3
Sep 2008
PG671
InGaP HBT Gain Block
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Voltage
+5.5
V
Device Current
150
mA
RF Power Input
8
dBm
Storage Temperature
-55 to +125
°C
Ambient Operating Temperature
-40 to +85
°C
Junction Temperature
165
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
ESD / MSL Ratings
1. ESD sensitive device.
Observe Handling Precautions.
2. ESD Rating : Class 2(Passes at 2000V min.)
Human Body Model (HBM), JESD22-A114
3. ESD Rating : Class IV (Passes at 1000V min.)
Charged Device Model (CDM), JESD22-C101
4. MSL (Moisture Sensitive Level) Rating : Level 3
at +260°C Convection reflow, J-STD-020
Evaluation Board Layout (4x4)
Mounting Instructions
1. Use a large ground pad area with many plated
through-holes as shown.
2. We recommend 1 oz copper minimum.
3. Measurement for our data sheet was made on
0.8mm thick FR-4 Board.
4. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
5. RF trace width depends on the board material and
construction.
6. Add mounting screws near the part to fasten the
board to a heatsink.
http://www.prewell.com
4
Sep 2008
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