SGB-4333(Z)

SGB-4333(Z)
SGB-4333(Z)
SGB-4333(Z)
DC to 3 GHz
Active Bias
Gain Block
DC to 3 GHZ ACTIVE BIAS GAIN BLOCK
NOT FOR NEW DESIGNS
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3 x 3 QFN, 16-Pin
Product Description
Features
„
„
„
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P1dB = 10.0 dBm at 1950 MHz
NS
RFMD’s SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3 V to 5 V supply the SGB-4333 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-4333
product is designed for high linearity 3 V gain block applications that require small
size and minimal external components. It is on chip matched to 50 Ω and an external bias inductor choke is required for the application band.
„
IP3 = 22.5 dBm at 1950 MHz
Low Thermal
Resistance = 76°C/W
SI
G
Optimum Technology
Matching® Applied
GaAs HBT
„
Applications
DE
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
„
3 V Battery Operated Applications
LO Buffer Amp
RF Pre-driver and RF Receive
Path
NE
Si CMOS
„
„
W
9
„
Si BJT
GaN HEMT
FO
R
RF MEMS
Parameter
Frequency of Operation
Small Signal Gain
Min.
Specification
Typ.
DC
13.0
NO
T
Output Power at 1 dB Compression
8.5
Output IP3
20.0
Input Return Loss
8.5
Output Return Loss
8.5
Current
48
Noise Figure
Thermal Resistance
Test Conditions: Z0 = 50 Ω, VCC = 3.0 V, IC = 56 mA, T = 30°C)
Max.
3000
17.5
14.5
14.0
11.5
10.0
9.5
25.0
22.5
21.0
10.5
10.5
56
4.0
76
16.0
62
5.0
Unit
MHz
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
mA
dB
°C/W
Condition
Freq = 850 MHz
Freq = 1950 MHz
Freq = 2400 MHz
Freq = 850 MHz
Freq = 1950 MHz
Freq = 2400 MHz
Freq = 850 MHz
Freq = 1950 MHz
Freq = 2400 MHz
Freq = 1950 MHz
Freq = 1950 MHz
Freq = 1950 MHz
junction - lead
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103087 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 8
SGB-4333(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
120
mA
Current (IC Total)
Device Voltage (VD)
5
V
Power Dissipation
0.4
W
-40 to +85
°C
20
dBm
Operating Lead Temperature (TL)
RF Input Power
Storage Temperature Range
-40 to +150
°C
Operating Junction Temp (TJ)
+150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
SI
G
NS
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
Detailed Performance Table: VCC = 3 V, IC = 56 mA, T = 25°C, Z = 50 Ω
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain, G
Output 3rd Order Intercept Point, OIP3
Output Power at 1dB Compression, P1dB
Input Return Loss, IRL
Output Return Loss, ORL
Reverse Isolation, S12
Noise Figure, NF
dB
dBm
dBm
dB
dB
dB
dB
18.1
17.8
26.5
12.0
15.6
12.7
21.5
3.5
17.5
25.0
11.5
14.2
12.0
21.9
3.5
14.5
22.5
10.0
10.5
10.5
22.7
4.0
14.0
21.0
9.5
10.7
11.0
22.8
4.4
11.8
W
8.1
12.0
22.9
5.0
NE
17.3
13.4
21.1
5.0
NO
T
FO
R
Simplified Device Schematic
DE
Parameter
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103087 Rev I
SGB-4333(Z)
NO
T
FO
R
NE
W
DE
SI
G
NS
Evaluation Board Data (VCC = VBIAS = 3.0 V, IC = 56 mA) Bias Tee substituted for DC feed inductor (L1)
EDS-103087 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 8
SGB-4333(Z)
NO
T
FO
R
NE
W
DE
SI
G
NS
Evaluation Board Data (VCC = VBIAS = 3.0 V, IC = 56 mA) Bias Tee substituted for DC feed inductor (L1) cont.
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103087 Rev I
SGB-4333(Z)
Function
NC
Description
These are no connect pins. Leave them unconnected on the PC board.
RF IN
GND
RF OUT
VBIAS
VCC
GND
RF input pin. A DC voltage should not be connected externally to this pin
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
RF Output pin. Bias is applied to the Darlington stage thru this pin.
NS
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
This is Vcc for the active bias circuit.
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the
main thermal path.
SI
G
Pin
1, 2,
4, 6,
7, 8,
11,
12, 14
3
5
10
13
16
Backside
Recommended Land Pattern
FO
R
NE
W
DE
Dimensions in millimeters (inches)
NO
T
Recommended PCB Soldermask for Land Pattern
EDS-103087 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 8
SGB-4333(Z)
Package Drawing
W
DE
SI
G
NS
Dimensions in millimeters (inches)
Refer to drawing posted at www.rfmd.com for tolerances.
NO
T
FO
R
NE
Typical Evaluation Board Schematic for 3.0 V
6 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103087 Rev I
SGB-4333(Z)
W
Board material GETEK, 31 mil thick, Dk = 4.2, 1 oz copper
DE
SI
G
NS
Evaluation Board Layout and Bill of Materials
NE
Component Values By Band
500 MHz
850 MHz
1950 MHz
2400 MHz
C3
1000 pF
1000 pF
1000 pF
1000 pF
C4*
1 uF
1 uF
1 uF
1 uF
C1, C2
220 pF
68 pF
43 pF
22 pF
33 nH
22 nH
18 nH
FO
R
Designator
L1
68 nH
*C4 is optional depending on application and filtering. Not required for SGB device operation.
Note: The amplifier can be run from a 5 V supply by simply inserting a 33 Ω resistor in series with VCC.
Part Identification
NO
T
The part will be symbolized with an “SGB4333” for Sn/Pb plating or “SGB43Z” for RoHS green compliant product. Marking
designator will be on the top surface of the package.
EDS-103087 Rev I
Ordering Information
Part Number
Reel Size
Devices/Reel
SGB-4333
13”
3000
SGB-4333Z
13”
3000
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 8
NO
T
FO
R
NE
W
DE
SI
G
NS
SGB-4333(Z)
8 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103087 Rev I
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