maapgm0021-die - TE Connectivity
RO-P-DS-3012 - A
MAAPGM0021-DIE
2W C/X-Band Power Amplifier
4.5–9.0 GHz
Preliminary Information
Features
♦
♦
♦
♦
4.5-9.0 GHz GaAs MMIC Amplifier
4.5 to 9.0 GHz Operation
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG® MESFET Process
Primary Applications
♦
♦
♦
Multiple Band Point-to-Point Radio
SatCom
ISM Band
Description
The MAAPGM0021-Die is a 2-stage 2 W power amplifier with
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/ACOM’s repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG®) MESFET Process.
This process provides polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Bandwidth
f
Typical
Units
4.5-9.0
GHz
Output Power
POUT
33
dBm
Power Added Efficiency
PAE
30
%
1-dB Compression Point
P1dB
31
dBm
Small Signal Gain
G
17
dB
Input VSWR
VSWR
1.7:1
Gate Current
IGG
<2
mA
Drain Current
IDD
< 750
mA
Output Third Order Intercept
OTOI
41
dBm
Noise Figure
NF
9
dB
3rd Order Intermodulation Distortion
Single Carrier Level = 23 dBm
IM3
31
dBc
5th Order Intermodulation Distortion
Single Carrier Level = 23 dBm
IM5
41
dBc
1. TB = MMIC Base Temperature
RO-P-DS-3012 - A
2W C/X-Band Power Amplifier
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MAAPGM0021-DIE
Maximum Operating Conditions 1
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
23.0
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
950
mA
Quiescent DC Power Dissipated (No RF)
PDISS
6.3
W
Junction Temperature
Tj
180
°C
Storage Temperature
TSTG
-55 to +150
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
4.0
8.0
10.0
V
Gate Voltage
VGG
-2.3
-2.0
-1.5
V
Input Power
PIN
18.0
21.0
dBm
Junction Temperature
TJ
150
°C
Thermal Resistance
ΘJC
150
°C/W
MMIC Base Temperature
TB
Note 2
°C
12.7°
2. Maximum MMIC Base Temperature = 150°C - ΘJC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
2W C/X-Band Power Amplifier
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MAAPGM0021-DIE
50
50
POUT
PAE
40
40
30
30
20
20
10
10
0
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V
and Pin = 18 dBm.
50
50
POUT
PAE
40
40
30
30
20
20
10
10
0
0
4
5
6
7
8
9
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 7.5 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
2W C/X-Band Power Amplifier
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MAAPGM0021-DIE
50
VDD = 4
VDD = 8
VDD = 6
VDD = 10
40
30
20
10
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
6
GAIN
VSWR
25
5
20
4
15
3
10
2
5
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Frequency (GHz)
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
2W C/X-Band Power Amplifier
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MAAPGM0021-DIE
Mechanical Information
Chip Size: 2.98 x 2.98 x 0.075 mm
VDD
2.980 mm.
2.475 mm.
VGG
2.828 mm.
OUT
IN
1.494 mm.
x 117 x 3 mils)
0.477 mm.
0.127 mm.
2.980 mm.
2.828 mm.
(117
1.490 mm.
0.149mm.
0.152 mm.
2.853 mm.
2.475 mm.
0.477 mm.
0
VDD
VGG
0.152 mm.
0
Figure 5. Die Layout
Bond Pad Dimensions
Pad
Size (µm)
Size (mils)
RF In and Out
100 x 200
4x8
DC Drain Supply Voltage VDD
200 x 150
8x6
DC Gate Supply Voltage VGG
150 x 150
6x6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
2W C/X-Band Power Amplifier
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MAAPGM0021-DIE
100 pF
100 pF
VDD
VGG
RFIN
RFOUT
OUT
IN
VDD
VGG
100 pF
100 pF
VGG
VDD
0.1 µF
0.1 µF
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
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