SGB-6533(Z) - Mall

SGB-6533(Z) - Mall
SGB-6533(Z)
SGB-6533(Z)
DC to 3 GHz
Active Bias
Gain Block
DC to 3 GHz ACTIVE BIAS GAIN BLOCK
NOT FOR NEW DESIGNS
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3 x 3 QFN, 16-Pin
Product Description
Features
„
„
„
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P1dB = 18.5 dBm at 1950 MHz
NS
RFMD’s SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 5 V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD
rating, low thermal resistance, and unconditional stability. The SGB-6533 product
is designed for high linearity 5 V gain block applications that require small size and
minimal external components. It is on chip matched to 50 Ω and an external bias
inductor choke is required for the application band.
„
IP3 = 32 dBm at 1950 MHz
Low Thermal
Resistance = 60°C/W
SI
G
Optimum Technology
Matching® Applied
GaAs HBT
„
Applications
DE
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
W
9
„
GaAs pHEMT
„
„
5 V Applications
LO Buffer Amp
RF Pre-Driver and RF Receive
Path
NE
Si CMOS
„
Si BJT
GaN HEMT
FO
R
RF MEMS
Parameter
Small Signal Gain
Min.
Specification
Typ.
17.0
T
Output Power at 1 dB Compression
17.0
NO
Output Third Order Intercept Point
30.0
Noise Figure
Frequency of Operation
DC
Current
76.0
Input Return Loss
11.0
Output Return Loss
10.0
Thermal Resistance
Test Conditions: Z0 = 50 Ω, VCC = 5 V, IC = 88 mA, T = 30°C
25.0
18.5
17.0
19.0
18.5
18.0
32.0
32.0
32.0
3.7
88.0
15.0
14.0
60
Max.
20.0
4.7
3000
98.0
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
mA
dB
dB
°C/W
Condition
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
1950 MHz
1950 MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103099 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 8
SGB-6533(Z)
Absolute Maximum Ratings
Parameter
Unit
150
mA
Max Device Voltage (VD)
6.5
V
RF Input Power, ZLOAD = 50 Ω
15
dBm
RF Input Power, ZLOAD > 10:1 VSWR
7
dBm
0.75
W
Power Dissipation
150
°C
Operating Temperature Range (TL)
Max Junction Temperature (TJ)
-40 to + 85
°C
Max Storage Temperature
-40 to +150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
NS
Rating
Current (IC total)
SI
G
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
Detailed Performance Table: VCC = 5 V, IC = 88 mA, T = 25°C, Z = 50 Ω
Unit
Small Signal Gain (G)
Output 3rd Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
Output Return Loss (ORL)
Reverse Isolation (S12)
Noise Figure (NF)
dB
dBm
dBm
dB
dB
dB
dB
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
28.4
26.9
32.0
19.1
19.1
18.5
30.3
3.1
25.0
32.0
19.0
26.4
15.3
29.7
3.1
18.5
32.0
18.5
15.0
14.0
26.2
3.7
17.0
32.0
18.0
13.5
11.9
25.4
4.2
13.1
W
NE
15.1
21.4
30.8
4.6
8.7
13.6
22.9
4.9
NO
T
FO
R
Simplified Device Schematic
100
MHz
DE
Parameter
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103099 Rev I
SGB-6533(Z)
NO
T
FO
R
NE
W
DE
SI
G
NS
Evaluation Board Data (VCC = VBIAS = 5.0 V, IC = 88 mA) Bias Tee substituted for DC feed inductor (L1)
EDS-103099 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 8
SGB-6533(Z)
NO
T
FO
R
NE
W
DE
SI
G
NS
Evaluation Board Data (VCC = VBIAS = 5.0 V, IC = 88 mA) Bias Tee substituted for DC feed inductor (L1) cont
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103099 Rev I
SGB-6533(Z)
Function
NC
Description
These are no connect pins. Leave them unconnected on the PC board.
RF IN
GND
RF OUT
VBIAS
VCC
GND
RF input pin. A DC voltage should not be connected externally to this pin
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
RF Output pin. Bias is applied to the Darlington stage thru this pin.
NS
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
This is Vcc for the active bias circuit.
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. Itis also the
main thermal path.
SI
G
Pin
1, 2,
4, 6,
7, 8,
11,
12, 14
3
5
10
13
16
Backside
Recommended Land Pattern
FO
R
NE
W
DE
Dimensions in millimeters (inches)
NO
T
Recommended PCB Soldermask for Land Pattern
EDS-103099 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 8
SGB-6533(Z)
Package Drawing
W
DE
SI
G
NS
Dimensions in millimeters (inches)
Refer to drawing posted at www.rfmd.com for tolerances.
NO
T
FO
R
NE
Typical Evaluation Board Schematic for 3.0 V
6 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103099 Rev I
SGB-6533(Z)
W
Board material GETEK, 31 mil thick, Dk = 4.2, 1 oz copper
DE
SI
G
NS
Evaluation Board Layout and Bill of Materials
NE
Component Values By Band
500 MHz
850 MHz
1950 MHz
2400 MHz
C3
1000 pF
1000 pF
1000 pF
1000 pF
C4*
1 uF
1 uF
1 uF
1 uF
C1, C2
220 pF
68 pF
43 pF
22 pF
33 nH
22 nH
18 nH
L1
FO
R
Designator
68 nH
*C4 is optional depending on application and filtering. Not required for SGB device operation.
Note: The amplifier can be run from a 8 V supply by simply inserting a 33 Ω resistor in series with VCC.
Part Identification
NO
T
The part will be symbolized with an “SGB6533” for Sn/Pb plating or “SGB65Z” for RoHS green compliant product. Marking
designator will be on the top surface of the package.
7 of 8
Ordering Information
Part Number
Reel Size
Devices/Reel
SGB-6533
13”
3000
SGB-6533Z
13”
3000
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103099 Rev I
NO
T
FO
R
NE
W
DE
SI
G
NS
SGB-6533(Z)
8 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
EDS-103099 Rev I
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