PVD3354PBF - International Rectifier

PVD3354PBF - International Rectifier
Replaced by PVD33N
Data Sheet No. PD10025E
Series PVD33
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 220mA, 0-300V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering
the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermocouple level to 300 volts peak DC. Signal frequencies into the RF range are easily controlled and
switching rates up to 6kHz are achievable. The extremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has created a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
1010 Operations
100µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
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Part Identification
Part Number
PVD2352
Operating
Voltage (DC)
200V
PVD3354
300V
Sensitivity
Off-State
Resistance
108 Ohms
5 mA
1010 Ohms
(BOSFET is a trademark of International Rectifier)
5AHEAI28,!!
Replaced by PVD33N
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVD2352
Minimum Control Current (see figures 1 and 2)
For 160mA Continuous Load Current
For 200mA Continuous Load Current
For 90mA Continuous Load Current
PVD3354
DC
[email protected]°C
[email protected]°C
[email protected]°C
2.0
5.0
5.0
Maximum Control Current for Off-State Resistance at 25°C
Control Current Range (Caution: current limit input LED. See figure 6)
Units
10
µA(DC)
2.0 to 25
mA(DC)
7.0
V(DC)
Maximum Reverse Voltage
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OUTPUT CHARACTERISTICS
PVD2352
Operating Voltage Range
PVD3354
Units
300
V(peak)
200
Maxiumum Load Current 40°C (see figures 1and 2)
220
mA(DC)
Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC
100
µs
Max. T(off) @ 12mA Control, 50 mA Load, 100 VDC
50
µs
Response Time @25°C (see figures 7 and 8)
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 50 mA Load, 5mA Control
8
Min. Off-state Resistance 25°C (see figure 5)
10
10 @ 160VDC
Max. Thermal Offset Voltage @ 5.0mA Control
Ω
6
10 @ 240VDC
0.2
Min. Off-State dv/dt
Output Capacitance (see figure 9)
1000
V/µs
20
pF @ 50VDC
2500
VRMS
GENERAL CHARACTERISTICS (PVD2352 and PVD3354)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Units
1012 @ 25°C - 50% RH
Ω
1.0
pF
+260
Operating
-40 to +85
Storage
-40 to +100
2
Ω
µvolts
°C
5AHEAI28,!!
Max. Load Current (mA)
Max. Load Current (mA)
Replaced by PVD33N
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ILED (mA)
Ambient Temperature (°C)
Figure 2. Typical Control Current Requirements
RDS(on) (Ω)
Load Current (mA)
Figure 1. Current Derating Curves
Ambient Temperature (°C)
VDS (Volts)
Figure 3.Typical On Characteristics
3
Figure 4. Typical On-Resistance
5AHEAI28,!!
IDOff/IDOff 25°C
Input Current (mA)
Replaced by PVD33N
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LED Forward Voltage Drop (Volts DC)
Ambient Temperature (°C)
Figure 6. Input Characteristics
(Current Controlled)
ILED (mA)
Figure 5. Normalized Off-State Leakage
Delay Time (microseconds)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
4
5AHEAI28,!!
Typical Capacitance (picofarads)
Replaced by PVD33N
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VDS Drain to Source Voltage
Figure 9. Typical Output Capacitance
Wiring Diagram
5
5AHEAI28,!!
Replaced by PVD33N
Case Outline
(Dimensions in millimeters (inches))
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Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 12/6/2000
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