Philips | TDA1561Q | User's Manual | Philips TDA1561Q User's Manual

INTEGRATED CIRCUITS
DATA SHEET
TDA1561Q
2 × 23 W high efficiency car radio
power amplifier
Preliminary specification
Supersedes data of 1997 Jun 11
File under Integrated Circuits, IC01
1997 Aug 14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
FEATURES
GENERAL DESCRIPTION
• Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode
The TDA1561Q is a monolithic power amplifier in a 13 lead
single-in-line (SIL) plastic power package. It contains two
identical 23 W amplifiers. The dissipation is minimized by
switching from SE to BTL mode, only when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.
• High Common Mode Rejection Ratio (CMRR)
• Mute/standby/operating/SE-only (mode select pin)
• Zero crossing mute and standby circuit
• Load dump protection circuit
• Short-circuit safe to ground, to supply voltage and
across load
• Loudspeaker protection circuit
• Device switches to single-ended operation at excessive
junction temperatures.
QUICK REFERENCE DATA
SYMBOL
VP
PARAMETER
supply voltage
IORM
repetitive peak output current
Iq(tot)
total quiescent current
Istb
standby current
Zi
input impedance
Po
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC biased
6.0
14.4
18
V
non operating
−
−
30
V
load dump
−
−
50
V
−
−
4
A
RL = ∞
−
95
150
mA
−
1
50
µA
−
60
−
kΩ
RL = 4 Ω; EIAJ
−
36
−
W
THD 10%
21
23
−
W
Gv
voltage gain
31
32
33
dB
CMRR
common mode rejection ratio
f = 1 kHz; Rs = 0 Ω
−
80
−
dB
SVRR
supply voltage ripple rejection
f = 1 kHz; Rs = 0 Ω
45
55
−
dB
−
−
150
mV
40
60
−
dB
−
−
1
dB
∆VO
DC output offset voltage
αcs
channel separation
∆Gv
channel unbalance
Rs = 0 kΩ
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TDA1561Q
DBS13P
1997 Aug 14
DESCRIPTION
plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
2
VERSION
SOT141-6
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
BLOCK DIAGRAM
VP
handbook, full pagewidth
7
MUTE
IN1
1
6
OUT1
5
OUT1
R
CIN
MODE
12
REFERENCE
SOURCES
MUTE/STANDBY
1/2R
THERMAL/
SHORT-CIRCUIT
PROTECTION
HIGHER
TEMPERATURE
BTL DISABLE
0.5VP
11
C 11
3
9
HVP
OUT2
2
R
8
IN2
OUT2
13
TDA1561Q
MUTE
4
GND1
10
MLD214
GND2
Fig.1 Block diagram.
1997 Aug 14
3
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
PINNING
SYMBOL
PIN
DESCRIPTION
IN1
1
input 1
HVP
2
half supply voltage control input
MODE
3
mute/standby/operating/SE-only
GND1
4
ground 1
OUT1
5
inverting output 1
OUT1
6
VP
handbook, halfpage
IN1
1
HV P
2
MODE
3
non-inverting output 1
GND1
4
7
supply voltage
OUT1
5
OUT2
8
inverting output 2
OUT1
6
OUT2
9
non-inverting output 2
VP
7
GND2
10
ground 2
OUT2
8
C11
11
electrolytic capacitor for
single-ended (SE) mode
OUT2
9
CIN
12
common input
GND2 10
IN2
13
input 2
C 11
TDA1561Q
11
CIN 12
IN2 13
MLD215
Fig.2 Pin configuration.
1997 Aug 14
4
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
The device is fully protected against short-circuiting of the
output pins to ground and to the supply voltage. It is also
protected against short-circuiting the loudspeaker and
high junction temperatures. In the event of a permanent
short-circuit condition to ground or the supply voltage, the
output stage will be switched off causing a low dissipation.
With permanent short-circuiting of the loudspeaker, the
output stage will be repeatedly switched on and off.
The duty cycle in the ‘on’ condition is low enough to
prevent excessive dissipation.
FUNCTIONAL DESCRIPTION
The TDA1561Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP = 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.
With a sine wave input signal the dissipation of a
conventional BTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1561Q (see Fig.9).
To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector allows only switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately avoiding clicks coming from electronic
circuitry preceding the power amplifier.
In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the dissipation of a conventional BTL amplifier
with the same output power is approximately 70% higher
(see Fig.10).
The voltage of the SE electrolytic capacitor (pin 11) is
always kept at 0.5VP by means of a voltage buffer (see
Fig.1). The value of this capacitor has an important
influence on the output power in SE mode, especially at
low signal frequencies, a high value is recommended to
minimize dissipation at low frequencies.
The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 145 °C. In this case the output power is limited to
5 W per amplifier.
The gain of each amplifier is internally fixed at 32 dB. With
the MODE pin, the device can be switched to the following
modes:
• Standby with low standby current (<50 µA)
• Mute condition, DC adjusted
• On, operation
• SE-only, operation (BTL disabled).
1997 Aug 14
TDA1561Q
5
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
MIN.
MAX.
UNIT
operating
−
18
V
non operating
−
30
V
load dump; tr > 2.5 ms
−
50
V
VP(sc)
short-circuit safe voltage
−
18
V
Vrp
reverse polarity voltage
−
6
V
IOSM
non-repetitive peak output current
−
6
A
IORM
repetitive peak output current
−
4
A
Ptot
total power dissipation
−
60
W
Tstg
storage temperature
−55
+150
°C
Tvj
virtual junction temperature
−
150
°C
Tamb
operating ambient temperature
−40
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
thermal resistance from junction to case
Rth(j-a)
thermal resistance from junction to ambient
CONDITIONS
see note 1
Note
1. The value of Rth(c-h) depends on the application (see Fig.3).
1997 Aug 14
6
VALUE
UNIT
1.3
K/W
40
K/W
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
Heatsink design
There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.
handbook, halfpage
OUT 1
3.6 K/W
With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 5 W. At a virtual junction
temperature of 150 °C and a maximum ambient
temperature of 60 °C, Rth(vj-c) = 1.3 K/W and
Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink
virtual junction
OUT 2
OUT 1
3.6 K/W
3.6 K/W
OUT 2
3.6 K/W
0.6 K/W
0.6 K/W
150 – 60
should be: ---------------------- – 1.3 – 0.2 = 7.5 K/W
2×5
MGC424
0.1 K/W
Compared to a conventional BTL amplifier, the TDA1561Q
has a higher efficiency. The thermal resistance of the
heatsink should be:
150 – 60
1.7  ----------------------  – 1.3 – 0.2 = 13.8 K/W
2×5
1997 Aug 14
case
Fig.3 Thermal equivalent resistance network.
7
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VP
supply voltage
note 1
6.0
14.4
18.0
V
Iq
quiescent current
RL = ∞
−
95
150
mA
Istb
standby current
−
1
50
µA
VC
average electrolytic capacitor
voltage at pin 11
−
7.1
−
V
∆VO
DC output offset voltage
on state
−
−
150
mV
mute state
−
−
50
mV
standby condition
0
−
1
V
mute condition
2
−
3
V
Mode select switch (see Fig.4)
voltage at mode select pin
(pin 3)
Vms
Ims
switch current through pin 3
on condition (SE/BTL mode)
4
−
5.5
V
on condition (SE mode only)
7.5
−
VP
V
Vms = 5 V
−
−
40
µA
−
145
−
°C
Protection
Tdis
BTL disable temperature
Note
1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V.
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
V Phalfpage
handbook,
SE Only
8
7
6
5
4
3
SE/BTL
Mute
2
1
Standby
0
MLD216
Fig.4 Switching levels of mode select switch.
1997 Aug 14
8
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; C11 = 1000 µF; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
THD = 1%
MIN.
15
TYP.
MAX.
UNIT
18
−
W
THD = 10%
21
23
−
W
EIAJ
−
36
−
W
VP = 13.2 V; THD = 0.5%
−
14
−
W
VP = 13.2 V; THD = 10%
−
20
−
W
Po = 1 W; f = 1 kHz; note 1
−
0.1
−
%
THD
total harmonic distortion
Pd
dissipated power
Bp
power bandwidth
THD = 1%; Po = −1 dB
with respect to 15 W
−
20 to
15 000
−
Hz
fro(l)
low frequency roll-off
−1 dB; note 2
−
25
−
Hz
fro(h)
high frequency roll-off
−1 dB
130
−
−
kHz
Gv
closed loop voltage gain
31
32
33
dB
SVRR
supply voltage ripple rejection
on; f = 1 kHz
45
60
−
dB
mute; f = 1 kHz
−
90
−
dB
−
−
dB
−
80
−
dB
45
60
75
kΩ
see Figs 9 and 10
Rs = 0 Ω; Vripple = 2 V (p-p)
standby; f = 100 Hz to 10 kHz 80
CMRR
common mode rejection ratio
Zi
input impedance
W
Rs = 0 Ω; f = 1 kHz
∆Zi
mismatch in input impedance
−
1
−
%
VSE-BTL
SE to BTL switch voltage level
note 3
−
3
−
V
Vout
output voltage-mute (RMS value)
Vi = 1 V (RMS)
−
50
100
µV
Vn(o)
noise output voltage
αcs
channel separation
∆Gv
channel unbalance
on; Rs = 0 Ω; note 4
−
160
300
µV
on; Rs = 10 kΩ; note 4
−
170
−
µV
mute; note 5
−
20
−
µV
Rs = 0 Ω
40
60
−
dB
−
−
1
dB
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs (see Fig.6)(Vi = 0 V).
1997 Aug 14
9
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
TEST AND APPLICATION INFORMATION
1000 µF
16 V
handbook, full pagewidth
VP
MODE
3
Rs
IN1
input 1
220 nF
7
1
6
OUT1
220 nF
10 nF
4Ω
5
HVP
OUT1
100 nF
2
3.9 Ω
11 C11
0.5Rs
CIN
3.9 Ω
12
0.5VP
1000 µF
(16 V)
9
470 nF
OUT2
10
nF
TDA1561Q
Rs
8
IN2 13
input 2
220 nF
4
GND1
10
GND2
MLD223
Fig.5 Test diagram.
1997 Aug 14
10
4Ω
OUT2
3.9 Ω
100
nF
3.9 Ω
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
handbook, full pagewidth
TDA1561Q
1000 µF
16 V
(1)
Rs
IN1
MODE
VP
3
7
100 nF
1
6
220 nF
OUT1
10 nF
4Ω
5
HVP
OUT1
100 nF
2
3.9 Ω
100 nF
11
0.5Rs
CIN
12
C11
0.5VP
2 x 220 nF
9
OUT2
TDA1561Q
Rs
8
IN2
3.9 Ω
1000 µF
(16 V)
4Ω
10
nF
100
nF
3.9 Ω
3.9 Ω
OUT2
13
220 nF
4
GND1
10
GND2
MLD213
signal ground
power ground
Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.
Fig.6 Application diagram.
1997 Aug 14
11
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
86.36
handbook, full pagewidth
43.18
gnd
GND
Mode
select
Vp
Cool Power
m
s
s
m
4 × 220 nF
Out 1
TDA1561Q
Out 2
In1
sgnd
In2
MGK182
Dimensions in mm.
Fig.7 PCB layout (component side) for the application of Fig.6.
1997 Aug 14
12
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
86.36
handbook, full pagewidth
43.18
gnd
GND
Vp
Mode
m
s
s
Out2
m
Out1
In2
sgnd
In1
MGK183
Dimensions in mm.
Fig.8 PCB layout (soldering side) for the application of Fig.6.
1997 Aug 14
13
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
INTERNAL PIN CONFIGURATIONS
PIN
1,12,13
NAME
EQUIVALENT CIRCUIT
IN1, CIN, IN2
VP
h
pin 12
pin 1
pin 13
MLD217
2
HVP
handbook, halfpage
pin 2
3
MLD218
MODE
VP
handbook, halfpage
pin 3
MLD221
1997 Aug 14
14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
PIN
5, 9
NAME
TDA1561Q
EQUIVALENT CIRCUIT
OUT1, OUT2
VP
handbook, halfpage
pins 5, 9
MLD220
6, 8
OUT1, OUT2
VP
handbook, halfpage
pins 6, 8
MLD219
11
C11
MLD222
1997 Aug 14
15
pin 11
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
ADDITIONAL APPLICATION INFORMATION
MBH692
25
Pd
(W)
MBH693
25
Pd
(W)
handbook, halfpage
handbook, halfpage
20
20
(1)
(1)
15
15
(2)
10
10
5
5
0
(2)
0
2
0
4
6
8
Po (W)
10
2.2 µF
3.3
kΩ
330 Ω
91
nF
2.2 µF
3.3
kΩ
470 nF
68
nF
10
kΩ
MGC428
Fig.11 IEC-268 filter.
1997 Aug 14
6
8
Po (W)
10
Fig.10 Dissipation; pink noise through IEC-268
filter.
Fig.9 Dissipation; sine wave driven.
input
4
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
Input signal 1 kHz, sinusoidal; VP = 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
430 Ω
2
0
16
output
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
on condition
MODE
handbook, full pagewidth
VP
3
7
IN1 1
6
220 nF
OUT1
10 nF
4Ω
5
3.9 Ω
OUT1
100 nF
HVP 2
3.9 Ω
100 nF
11 C11
IEC-268
FILTER
CIN
2×
220 nF
pink
noise
12
1/2VP
1000 µF
(16 V)
9
OUT2
TDA1561Q
220 nF
8
4Ω
10
nF
100
nF
3.9 Ω
3.9 Ω
OUT2
IN2 13
10
4
GND1
GND2
MGC427
Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
MBH694
12
MBH695
125
handbook, halfpage
handbook, halfpage
Iq
(mA)
VO
(V)
100
8
75
50
4
25
0
0
0
8
16
VP (V)
24
0
16
VP (V)
24
Vms = 5 V; RI = ∞.
Vms = 5 V.
Fig.13 DC output voltage as a function of VP.
1997 Aug 14
8
Fig.14 Quiescent current as a function of VP.
17
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
MBH696
160
TDA1561Q
MBH697
80
IMODE
(µA)
handbook, halfpage
handbook, halfpage
IP
(mA)
64
120
48
80
SE/BTL
SE only
32
40
off
mute
16
0
0
0
2
4
6
8
VMODE (V)
0
2
4
6
8
VMODE (V)
VP = 14.4 V; Vin = 0 mV; RI = ∞.
Fig.15 IP as a function of Vms (pin 3).
Fig.16 Ims as a function of Vms.
MBH698
60
MBH699
102
handbook, halfpage
handbook, halfpage
THD + N
(%)
Po
(1)
(W)
10
40
(2)
1
(3)
(1)
20
10−1
(2)
(3)
0
8.4
10.8
13.2
15.6
VP (V)
10−2 −2
10
18
Both channels driven.
(1) EIAJ.
1
10
Po (W)
102
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(2) THD = 10%.
(3) THD = 1%.
Fig.17 Output power as a function of VP.
1997 Aug 14
10−1
Fig.18 THD + noise as a function of Po.
18
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
MBH700
10
TDA1561Q
MBH701
20
handbook, halfpage
handbook, halfpage
Bp
(W)
THD + N
(%)
(1)
18
(2)
1
16
(1)
14
10−1
(2)
12
10−2
10
102
103
104
f (Hz)
10
10
105
(1) Po = 10 W.
(2) Po = 1 W.
102
103
104 f (Hz) 105
(1) For OUT2.
(2) For OUT1.
Fig.19 THD + noise as a function of frequency.
Fig.20 Power bandwidth at THD = 1%.
MBH702
36
Gv
(dB)
MBH703
−20
handbook, halfpage
handbook, halfpage
SVRR
34
(dB)
−40
32
−60
30
−80
mute
28
−100
off
26
10
102
103
104
105
f (Hz)
−120
10
106
Vin = 50 mV.
102
103
104 f (Hz) 105
Vripple(p-p) = 2 V.
Fig.21 Gain as a function of frequency.
1997 Aug 14
on
Fig.22 SVRR as a function of frequency.
19
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
MBH704
0
handbook, halfpage
αcs
(dB)
−20
−40
handbook, halfpage
5 V/40 µA
(1)
−60
10 kΩ
MODE
47 µF
(2)
−100
10
MBH690
102
103
104 f (Hz) 105
(1) Po = 1 W.
(2) Po = 10 W.
Fig.23 Channel separation as a function of
frequency.
1997 Aug 14
Fig.24 Mode select circuit.
20
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
handbook, full pagewidth
(1)
TDA1561Q
(2)
(3)
VP
MBH691
Vload
0
−VP
VP
Vmaster
1/2 VP
0
VP
Vslave
1/2 VP
0
0
1
2
See Fig.5:
Vload = V6 − V5 or V8 − V9
Vmaster = V6 or V8
Vslave = V5 or V9
Fig.25 Output waveforms.
1997 Aug 14
21
t (ms)
3
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
PACKAGE OUTLINE
DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
SOT141-6
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
B
j
E
A
L3
L
Q
c
1
v M
13
e1
Z
e
bp
e2
m
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
bp
c
D (1)
d
Dh
E (1)
e
e1
e2
Eh
j
L
L3
m
Q
v
w
x
Z (1)
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
3.4
1.7
5.08
6
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.25
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-03-11
97-12-16
SOT141-6
1997 Aug 14
EUROPEAN
PROJECTION
22
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 14
23
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/05/pp24
Date of release: 1997 Aug 14
Document order number:
9397 750 02732
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