Philips TDA2615 Data Sheet
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Philips TDA2615 is a 2 × 6 W hi-fi audio power amplifier designed for mains-fed applications, such as stereo radio and stereo TV. It requires few external components, has no switch-on/switch-off clicks, and provides input mute during switch-on and switch-off. The offset voltage between output and ground is low, and the gain balance of both amplifiers is excellent. The device is hi-fi in accordance with "IEC 268" and "DIN 45500", short-circuit-proof, and thermally protected. It also features a mute possibility.
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INTEGRATED CIRCUITS
DATA SHEET
TDA2615
2
×
6 W hi-fi audio power amplifier
1995 May 08 Product specification
Supersedes data of July 1994
File under Integrated Circuits, IC01
Philips Semiconductors
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
Product specification
TDA2615
FEATURES
•
Requires very few external components
•
No switch-on/switch-off clicks
•
Input mute during switch-on and switch-off
•
Low offset voltage between output and ground
•
Excellent gain balance of both amplifiers
•
Hi-fi in accordance with “IEC 268” and “DIN 45500”
•
Short-circuit proof and thermal protected
•
Mute possibility.
QUICK REFERENCE DATA
Stereo application.
SYMBOL
±
V
P
P
O
G v
G v
α
SVRR
V no
PARAMETER supply voltage range output power internal voltage gain channel unbalance channel separation supply voltage ripple rejection noise output voltage
GENERAL DESCRIPTION
The TDA2615 is a dual power amplifier in a 9-lead plastic single-in-line (SIL9MPF) medium power package. It has been especially designed for mains fed applications, such as stereo radio and stereo TV.
CONDITIONS
V
S
=
±
12 V; THD = 0.5%
MIN.
7.5
−
−
−
−
−
−
−
6
TYP.
30
0.2
70
60
70
MAX.
21
−
−
−
−
−
−
V
UNIT
W dB dB dB dB
µ
V
ORDERING INFORMATION
TYPE
NUMBER
TDA2615
NAME
SIL9MPF
PACKAGE
DESCRIPTION plastic single in-line medium power package with fin; 9 leads
VERSION
SOT110-1
1995 May 08 2
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
BLOCK DIAGRAM
Product specification
TDA2615
INV1
1
MUTE
2
3
INV2
INV1, 2
9
8
+ V
P
7
V
A
V ref1
680
Ω
20 k
Ω
CM V
B
20 k
Ω
4 k
Ω
5 k
Ω
+ V
P
V ref1
10 k
Ω
V ref3
+ V ref2
– V
P
– V
P
10 k
Ω
– V ref2
20 k
Ω voltage comparator
– V
P
+ V
P
V
A
V
B
680
Ω
V
B
CM
20 k
Ω
TDA2615
THERMAL
PROTECTION
4
OUT1
6
OUT2
V ref1
VA
5
– V
P
MLA711
1995 May 08
Fig.1 Block diagram.
3
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
PINNING
SYMBOL PIN
−
INV1 1
DESCRIPTION non-inverting input 1
MUTE
1
⁄
2
V
P
/GND
OUT1
−
V
P
OUT2
2 mute input
3 1
⁄
2
supply voltage or ground
4 output 1
5
6 supply voltage (negative) output 2
+V
P
INV1, 2
−
INV2
7
8
9 supply voltage (positive) inverting input 1 and 2 non-inverting input 2
INV1 1
MUTE 2
1/2 V
P
/ GND
OUT1
3
4
V
P 5
OUT2 6
+ V
P 7
INV1, 2 8
INV2 9
TDA2615
MLA708
Fig.2 Pin configuration.
Product specification
TDA2615
FUNCTIONAL DESCRIPTION
The TDA2615 is a hi-fi stereo amplifier designed for mains fed applications, such as stereo radio and stereo TV. The circuit is optimally designed for symmetrical power supplies, but is also well-suited to asymmetrical power supply systems.
An output power of 2
×
6 W (THD = 0.5%) can be delivered into an 8
Ω
load with a symmetrical power supply of
±
12 V. The gain is internally fixed at 30 dB, thus offering a low gain spread and a very good gain balance between the two amplifiers (0.2 dB).
A special feature is the input mute circuit. This circuit disconnects the non-inverting inputs when the supply voltage drops below
±
6 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression of unwanted signals at the inputs, during switch-on and switch-off.
The mute circuit can also be activated via pin 2. When a current of 300
µ
A is present at pin 2, the circuit is in the mute condition.
The device is provided with two thermal protection circuits.
One circuit measures the average temperature of the crystal and the other measures the momentary temperature of the power transistors. These control circuits attack at temperatures in excess of +150
°
C, so a crystal operating temperature of max. +150
°
C can be used without extra distortion.
With the derating value of 6 K/W, the heatsink can be calculated as follows: at R
L
= 8
Ω
and V
S dissipation is 7.8 W.
=
±
12 V, the measured maximum
With a maximum ambient temperature of +60
°
C, the thermal resistance of the heatsink is:
R th
=
150 –
7.8
60
– 6 = 5.5 K/W
The metal tab has the same potential as pin 5.
1995 May 08 4
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
Product specification
TDA2615
LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
SYMBOL
±
V
P
I
OSM
P tot
T stg
T xtal
T amb t sc
PARAMETER supply voltage non-repetitive peak output current total power dissipation storage temperature range crystal temperature ambient operating temperature range short-circuit time
CONDITIONS MIN.
MAX.
UNIT see Fig.3
−
−
−
−
55
−
−
25 short-circuit to ground; note 1
−
21
4
15 W
+150
°
C
+150
°
C
+150
°
C
1
V
A h
Note
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to
V
P
= 28 V and with an internal supply resistance of R
S
≥
4
Ω
, the maximum unloaded supply voltage is limited to 32 V
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to V
P
= 21 V.
THERMAL CHARACTERISTICS
SYMBOL
R th j-c
PARAMETER thermal resistance from junction to case
VALUE
6
UNIT
K/W
P tot
(W)
16
12
8
4
0
– 25 0
MCD368 - 2 infinite heatsink
50 100 150
Fig.3 Power derating curve.
1995 May 08 5
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
Product specification
TDA2615
CHARACTERISTICS
SYMBOL PARAMETER
Supply
±
V
P
I
ORM supply voltage range repetitive peak output current
I
Operating position; note 1
±
V
P supply voltage range q(tot)
P
O total quiescent current output power
THD
B total harmonic distortion power bandwidth
G v
G v
V no
Z i
voltage gain gain unbalance noise output voltage input impedance
SVRR
α cs supply voltage ripple rejection channel separation
I bias input bias current
∆
V
GND
DC output offset voltage
∆
V
4
−
6
DC output offset voltage
M UTE POSITION ( AT I
MUTE
≥
300
µ
A)
V
O
Z
2
−
7
I q(tot) output voltage mute input impedance total quiescent current
V no noise output voltage
SVRR supply voltage ripple rejection
∆
V
GND
DC output offset voltage
∆
V off
offset voltage with respect to operating position
I
2 current if pin 2 is connected to pin 5
I
Mute position; note 5
±
V
P supply voltage range
P
V
O total quiescent current output voltage
V no noise output voltage
SVRR supply voltage ripple rejection
∆
V
GND
DC output offset voltage
CONDITIONS
R
L
=
∞
V
I
= 600 mV note 3 note 4
−
MIN.
2.2
R
L
=
∞
THD = 0.5%
THD = 10%
P
O
= 4 W
THD = 0.5%; note 2 note 3
7.5
18 note 4 40
R
S
= 0
− between two channels
−
46
−
5
29
−
−
14
6.5
−
−
V
I
= 600 mV
R
L
=
∞ note 3 note 4
−
−
18
−
40
−
−
−
2
9
−
−
40
−
12
−
−
30
0.3
70
55
40
0.3
9
40
70
55
40
4
−
TYP.
21
−
MAX.
V
A
20
60
70
6
8
12
40
0.15
0.2
20 to 20000
−
30 31
0.2
70
1
140
21
70
−
−
0.3
30
4
26
−
−
−
200
150
%
Hz dB dB
µ
V k
Ω dB dB
µ
A mV mV
V mA
W
W
1.0
−
70
140
−
200
150
6
5.8
40
1.0
140
−
200 mV k
Ω mA
µ
V dB mV mV mA
V
UNIT mA mV
µ
V dB mV
1995 May 08 6
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
Product specification
TDA2615
SYMBOL PARAMETER CONDITIONS MIN.
TYP.
MAX.
UNIT
Operating position; note 6
I q(tot)
P
O total quiescent current output power
THD
B total harmonic distortion power bandwidth
I
G v
G v
V no
Z i
voltage gain gain unbalance noise output voltage input impedance
SVRR
α cs supply voltage ripple rejection channel separation
M UTE POSITION (I
MUTE
≥
300
µ
A)
V
O
Z
2
−
7
I q(tot)
V no
SVRR
∆
V off
output voltage mute input impedance total quiescent current noise output voltage supply voltage ripple rejection
2 offset voltage with respect to operating position current if pin 2 is connected to pin 5
THD = 0.5%
THD = 10%
P
O
= 4 W
THD = 0.5%; note 1 note 3
V
I
= 600 mV note 7 note 3 note 4
18
5
6.5
−
−
29
−
−
14
35
−
−
6.7
18
−
35
−
−
40
6
8
0.13
0.2
40 to 20000
−
30
0.2
70
20
44
45
0.3
9
40
70
44
4
−
70
−
−
31
1
140
26
−
−
1.0
11.3
70
140
−
150
6 mA
W
W
%
Hz dB dB
µ
V k
Ω dB dB mV k
µ
Ω mA
V dB mV mA
Notes
1. V
P
=
±
12 V; R
L
= 8
Ω
; T amb
= 25
°
C; f i
= 1 kHz; symmetrical power supply I
MUTE
=
2. The power bandwidth is measured at a maximum output power (P
Omax
) of
−
3 dB.
<
30
µ
A (see Fig.4).
3. The noise output voltage (RMS value) is measured at R
S
= 2 k
Ω
, unweighted (20 Hz to 20 kHz).
4. The ripple rejection is measured at R
S
= 0 and f i
= 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at f i
= 1 kHz.
5.
±
V
P
= 4 V; R
L
= 8
Ω
; T amb
= 25
°
C; f i
= 1 kHz; symmetrical power supply (see Fig.4).
6. V
P
= 24 V; R
L
= 8
Ω
; T amb
= 25
°
C; f i
= 1 kHz; asymmetrical power supply I
MUTE
<
30
µ
A (see Fig.5).
7. The internal network at pin 2 is a resistor divider of typical 4 k
Ω
and 5 k
Ω
to the positive supply rail. At the connection of the 4 k
Ω
and 5 k
Ω
resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread of the zener voltage is 6.1 to 7.1 V.
1995 May 08 7
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
TEST AND APPLICATION INFORMATION
Product specification mute input
2
680
Ω
7
20 k
Ω
V
I
220 nF
1
3
V
I
220 nF
9
20 k
Ω
20 k
Ω
TDA2615
8
680
Ω
5
20 k
Ω
4
6
2200
µ
F
22 nF
8.2
Ω
R = 8
Ω
22 nF
8.2
Ω
L
Ω
100 nF
+ V
P
2200
µ
F
MLA710 - 2
– V
P
TDA2615
Fig.4 Test and application circuit with symmetrical power supply.
1995 May 08 8
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier mute input
680
Ω
V
P
7
20 k
Ω
V
I
220 nF
V
I
100
µ
F
220 nF
1
3
9
4
20 k
Ω internal
1/2 V
P
20 k
Ω
TDA2615
6
8
680
Ω
20 k
Ω
5
100 nF
R
S
2200
µ
F
V
S
22 nF
8.2
Ω
680
µ
F
R = 8
Ω
22 nF
8.2
Ω
680
µ
F
R = 8
Ω
MLA709 - 1
Fig.5 Test and application circuit with asymmetrical power supply.
Product specification
TDA2615
1995 May 08 9
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
D
Product specification
TDA2615
SOT110-1
P
D
1 q
P
1
A
2 q
1 q
2
A
3
A
A
4
E pin 1 index
Z
1 b
2 e
9 b b
1 w
M
L
Q c
0 5 scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A
2 max.
A
3
A
4 b b
1 b
2 mm
18.5
17.8
3.7
8.7
8.0
15.8
15.4
1.40
1.14
0.67
0.50
1.40
1.14
c
0.48
0.38
D
(1)
21.8
21.4
D
1
21.4
20.7
E
(1) e
6.48
6.20
2.54
L P
3.9
3.4
2.75
2.50
P
1
3.4
3.2
Q q
1.75
1.55
15.1
14.9
q
1
4.4
4.2
q
2
5.9
5.7
w
0.25
Z
(1) max.
1.0
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT110-1
IEC
REFERENCES
JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
92-11-17
95-02-25
1995 May 08 10
Philips Semiconductors
2
×
6 W hi-fi audio power amplifier
Product specification
TDA2615
SOLDERING
Plastic single in-line packages
B Y DIP OR WAVE
The maximum permissible temperature of the solder is
260
°
C; this temperature must not be in contact with the joint for more than 5 s. The total contact time of successive solder waves must not exceed 5 s.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified storage maximum. If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
R EPAIRING SOLDERED JOINTS
Apply the soldering iron below the seating plane (or not more than 2 mm above it). If its temperature is below
300
°
C, it must not be in contact for more than 10 s; if between 300 and 400
°
C, for not more than 5 s.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 May 08 11
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SCD39 © Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
513061/1500/03/pp12
Document order number:
Date of release: 1995 May 08
9397 750 00122
Philips Semiconductors
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