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- LF147QML Wide Bandwidth Quad JFET Input Operational Amplifier (Rev. A)
- Data Sheet
Texas Instruments LF147QML Wide Bandwidth Quad JFET Input Operational Amplifier (Rev. A) Datasheet
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Texas Instruments LF147QML Wide Bandwidth Quad JFET Input Operational Amplifier (Rev. A) is a high-performance operational amplifier designed for applications requiring wide bandwidth, high slew rate, and low noise. The device features a low input bias current, low input offset voltage, and high common-mode rejection ratio. It is suitable for use in a variety of applications, including high-speed integrators, fast D/A converters, sample-and-hold circuits, and many other circuits requiring precision and speed.
advertisement
LF147QML www.ti.com
SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
LF147QML Wide Bandwidth Quad JFET Input Operational Amplifier
Check for Samples: LF147QML
1
FEATURES
23
• Internally Trimmed Offset Voltage: 5 mV Max
• Low Input Bias Current: 50 pA Typ.
• Low Input Noise Current: 0.01 pA/ √ Hz Typ.
• Wide Gain Bandwidth: 4 MHz Typ.
• High Slew Rate: 13 V/ μ s Typ.
• Low Supply Current: 7.2 mA Typ.
• High Input Impedance: 10
12
Ω Typ.
• Low Total Harmonic Distortion:
– A
V
= 10, R
L
= 10K Ω , V
O
= 20V
P-P
– BW = 20Hz – 20KHz ≤ 0.02% Typ.
• Low 1/f Noise Corner: 50 Hz Typ.
• Fast Settling Time to 0.01%: 2 μ s Typ.
DESCRIPTION
The LF147 is a low cost, high speed quad JFET input operational amplifier with an internally trimmed input offset voltage ( BI-FET II™ technology). The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF147 is pin compatible with the standard LM148. This feature allows designers to immediately upgrade the overall performance of existing LF148 and LM124 designs.
The LF147 may be used in applications such as high speed integrators, fast D/A converters, sample-andhold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The device has low noise and offset voltage drift.
CONNECTION DIAGRAM
Dual-In-Line Package (CDIP)
Top View
See Package Number J0014A
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
BI-FET II is a trademark of dcl_owner.
3
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated
LF147QML
SNOSAI1A – APRIL 2005 – REVISED MARCH 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Simplified Schematic
Figure 1. ¼ Quad
Detailed Schematic
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Absolute Maximum Ratings
(1)
Supply Voltage
Differential Input Voltage
Input Voltage Range
(2)
Output Short Circuit Duration
(3)
Power Dissipation
(4) (5)
T
J max
θ
JA
CERDIP
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 sec.)
ESD
(6)
±22V
±38V
±19V
Continuous
900 mW
150°C
70°C/W
− 55°C ≤ T
A
≤ 125°C
− 65°C ≤ T
A
≤ 150°C
260°C
900V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For specifications and test conditions, see the Electrical
Characteristics. The specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(2) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(3) Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax
θ
JA
(Package junction to ambient thermal resistance), and T
A
(maximum junction temperature),
(ambient temperature). The maximum allowable power dissipation at any temperature is P
Dmax
= (T
Jmax
— T
A
) / θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.
(5) Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside specified limits.
(6) Human body model, 1.5 k Ω in series with 100 pF.
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
1
2
3
4
5
6
7
8A
8B
9
10
11
Description
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp (°C)
25
125
-55
25
125
-55
25
125
-55
25
125
-55
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
LF147 883 Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified: V
S
= ±20V, V
CM
= 0V, R
S
= 50 Ω
Symbol Parameter Conditions Notes Min Max
V
IO
Input Offset Voltage R
S
= 10K Ω
I
IO
±I
IB
Input Offset Current
Input Bias Current
R
L
= 10K Ω
R
L
=10K Ω
V
CM
CMRR
PSRR
I
S
I
OS
Input Common Mode Voltage
Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Supply Current
Output Short Circuit
R
V
S
S
≤ 10K Ω , V
CM
= ±20V to V
S
= ±16V
= ±5V
V
S
= ±15V, V
I
= +1V,
Output short to GND
V
S
= ±15V, V
I
= -1V,
Output short to GND
A
VS
Large Signal Voltage Gain V
S
R
L
= ±15V, V
O
= 2K Ω , R
S
= 0 to +10V,
= 10K Ω
V
S
R
L
= ±15V, V
O
= 0 to -10V
= 2 K Ω , R
S
=10K Ω
V
O
Output Voltage Swing V
S
V
I
= ±15V, R
= +1V
L
= 10K Ω ,
V
S
V
I
= ±15V, R
= -1V
L
= 10K Ω ,
V
S
= ±15V, R
L
= 2K Ω , V
I
= +1V
V
S
= ±15V, R
L
= 2K Ω , V
I
= -1V
(1) Specified by CMRR test
(2) V/mV in units column is equivalent to K in datalog
(1)
(2)
(2)
(2)
(2)
5
8
0.1
25
-0.2
0.2
-50 50
-16 16
-40
13
6
50
25
50
25
80
80
11
-57 -13
-6
57
40
12
10
-12
-10
LF147 883 Electrical Characteristics AC Parameters
The following conditions apply, unless otherwise specified: V
S
= ±20V, V
CM
= 0V, R
S
= 50 Ω
Symbol Parameter Conditions
Notes Min Max
SR Slew Rate V
I
R
L
= -5V to +5V, A
V
=1
= 2K Ω , CL = 100pF
V
I
R
L
= +5V to -5V, A
V
= 1
= 2K Ω , CL = 100pF
8
5
8
5
Unit mV mV nA nA nA nA
V dB dB mA mA mA mA mA
V/mV
V/mV
V/mV
V/mV
V
V
V
V
Unit
V/µs
V/µs
V/µS
V/µS www.ti.com
Subgroups
7
8A, 8B
7
8A, 8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 3
2
1, 3
2
4
5, 6
4
5, 6
4, 5, 6
Subgroups
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
4, 5, 6
4, 5, 6
4, 5, 6
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
LF147 SMD Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified: V
S
= ±15V, V
CM
= 0V, R
S
= 0 Ω , R
L
= Open
Symbol Parameter Conditions Notes Min Max
V
IO
Input Offset Voltage Vcc = ±15V
I
IO
±I
IB
A
VS
+V
O
-V
O
V
CM
CMRR
+PSRR
-PSRR
+I
S
-I
S
+I
OS
-I
OS
Input Offset Current
Input Bias Current
Large Signal Voltage Gain
Output Voltage Swing
Output Voltage Swing
Input Common Mode Voltage
Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Power Supply Rejection Ratio
Supply Current
Supply Current
Output Short Circuit Current
Output Short Circuit Current
Vcc = ±9V
V
S
R
L
= ±15V, V
O
= 2K Ω
= 0 to +10V,
V
S
R
L
= ±15V, V
O
= 2K Ω
= 0 to -10V,
V
S
= ±15V, R
L
= 10K Ω
V
S
= ±15V, R
L
= 2K Ω
V
S
= ±15V, R
L
= 10K Ω
V
S
= ±15V, R
L
= 2K Ω
V
CM
= ±11V
+V
S
= 15 to 9V, -V
S
= -15V
+V
S
= 15V, -V
S
= -15 to -9V
V
S
= ±15V
V
S
= ±15V
(1)
±11
80
80
80
14
-14
-57 -13
-40
13
6
-6
57
40
15
35
15
12
10
-9
-15
-9
-0.1
0.1
-20 20
-0.2
0.2
-50
35
50
9
15
9
-12
-10
(1) Specified by CMRR test
1, 2, 3
1
1
1
1
1
1, 3
2
1, 3
2
Subgroups
1
2, 3
1
1
2
5, 6
4, 5, 6
4, 5, 6
4, 5, 6
4, 5, 6
1
2
4
5, 6
4
Unit nA nA
V/mV
V/mV
V/mV mV mV mV nA nA
V/mV
V
V
V
V
V dB dB dB mA mA mA mA mA mA
LF147 SMD Electrical Characteristics AC Parameters
The following conditions apply, unless otherwise specified: V
S
= ±15V, V
CM
= 0V, R
S
= 0 Ω , R
L
= Open
Symbol Parameter Conditions Notes Min Max
SR Slew Rate V
I
R
L
= -5V to +5V, A
V
= 2K Ω , C
L
=1
= 100pF
V
I
R
L
= +5V to -5V, A
V
=1
= 2K Ω , C
L
= 100pF
8
5
8
5
Unit
V/µs
V/µs
V/µS
V/µS
Subgroups
7
8A, 8B
7
8A, 8B
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Typical Performance Characteristics
Input Bias Current Input Bias Current www.ti.com
Figure 2.
Supply Current
Figure 3.
Positive Common-Mode
Input Voltage Limit
Figure 4.
Negative Common-Mode
Input Voltage Limit
Figure 5.
Positive Current Limit
Figure 6.
Figure 7.
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LF147QML
SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
Negative Current Limit Output Voltage Swing
Figure 8.
Output Voltage Swing
Figure 9.
Gain Bandwidth
Figure 10.
Bode Plot
Figure 11.
Slew Rate
Figure 12.
Figure 13.
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
Distortion vs
Frequency
Undistorted Output Voltage
Swing www.ti.com
Figure 14.
Open Loop Frequency
Response
Figure 16.
Power Supply Rejection
Ratio
Figure 15.
Common-Mode Rejection
Ratio
Figure 17.
Equivalent Input Noise
Voltage
Figure 18.
Figure 19.
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LF147QML
SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
Open Loop Voltage Gain Output Impedance
Figure 20.
Inverter Settling Time
Figure 21.
Figure 22.
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
R
L
= 2 k Ω , C
L
= 10 pF
Small Signal Inverting
Pulse Response
Small Signal Non-Inverting www.ti.com
Large Signal Inverting Large Signal Non-Inverting
Current Limit (R
L
=100 Ω )
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SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
APPLICATION INFORMATION
The LF147 is an op amp with an internally trimmed input offset voltage and JFET input devices (BI-FET II).
These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large increase in input current. The maximum differential input voltage is independent of the supply voltages. However, neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force the amplifier output to a high state. In neither case does a latch occur since raising the input back within the common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if both inputs exceed the limit, the output of the amplifier will be forced to a high state.
The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings to within 3V of the negative supply, an increase in input offset voltage may occur.
Each amplifier is individually biased by a zener reference which allows normal circuit operation on ±4.5V power supplies. Supply voltages less than these may result in lower gain bandwidth and slew rate.
The LF147 will drive a 2 k Ω load resistance to ±10V over the full temperature range. If the amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and negative swings.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in order to ensure stability. For example, resistors from the output to an input should be placed with the body close to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the capacitance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant.
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Typical Applications
Figure 23. Digitally Selectable Precision Attenuator www.ti.com
All resistors 1% tolerance
• Accuracy of better than 0.4% with standard 1% value resistors
No offset adjustment necessary
• Expandable to any number of stages
• Very high input impedance
A1 A2 A3
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
V
O
Attenuation
0
− 1 dB
− 2 dB
− 3 dB
− 4 dB
− 5 dB
− 6 dB
− 7 dB
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LF147QML
SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Figure 24. Long Time Integrator with Reset, Hold and Starting Threshold Adjustment
• V
OUT starts from zero and is equal to the integral of the input voltage with respect to the threshold voltage:
• Output starts when V
IN
≥ V
TH
• Switch S1 permits stopping and holding any output value
• Switch S2 resets system to zero
Figure 25. Universal State Variable Filter
For circuit shown: f
O
= 3 kHz, f
NOTCH
= 9.5 kHz
Q=3.4
Passband gain: Highpass—0.1
Bandpass—1
Lowpass—1
Notch—10
• f o
×Q ≤ 200 kHz
• 10V peak sinusoidal output swing without slew limiting to 200 kHz
• See LM148 data sheet for design equations
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LF147QML
SNOSAI1A – APRIL 2005 – REVISED MARCH 2013
Revision Section Date
Released
04/18/05 A New Release into corporate format
03/20/13 A All
Originator
L. Lytle www.ti.com
Changes
2 MDS datasheets converted into one Corp.
datasheet format. MNLF147–X Rev. 0A2 and
MDLF147–X Rev. 0A1, data sheets will be
Archived
Changed layout of National Data Sheet to TI format
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PACKAGE OPTION ADDENDUM www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device Status
(1)
ACTIVE
Package Type Package
Drawing
Pins Package
Qty
CDIP J 14 25
Eco Plan
(2)
TBD
Lead/Ball Finish MSL Peak Temp
(3)
Call TI Call TI
Op Temp (°C) Top-Side Markings
(4)
LF147J/883 Q LF147J/883 -55 to 125
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Samples
Addendum-Page 1
J0014A
12X .100
[2.54]
PIN 1 ID
(OPTIONAL)
1
SCALE 0.900
A
4X .005 MIN
[0.13]
14
14X .045
-.065
[ 1.15
-1.65
]
.754
-.785
[ 19.15
-19.94
]
PACKAGE OUTLINE
CDIP - 5.08 mm max height
CERAMIC DUAL IN LINE PACKAGE
.015
-.060
[ 0.38
-1.52
]
TYP
14X .014
-.026
[ 0.36
-0.66
]
.010 [0.25] C A B
B
7
.245
-.283
[ 6.22
-7.19
]
8
.308
-.314
[ 7.83
-7.97
]
AT GAGE PLANE
.2 MAX TYP
[5.08]
C
.13 MIN TYP
[3.3]
SEATING PLANE
.015 GAGE PLANE
[0.38]
0 -15
TYP
14X .008-.014
[0.2-0.36]
4214771/A 05/2017
NOTES:
1. All controlling linear dimensions are in inches. Dimensions in brackets are in millimeters. Any dimension in brackets or parenthesis are for
reference only. Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This package is hermitically sealed with a ceramic lid using glass frit.
4. Index point is provided on cap for terminal identification only and on press ceramic glass frit seal only.
5. Falls within MIL-STD-1835 and GDIP1-T14.
www.ti.com
J0014A
SEE DETAIL A
1
12X (.100 )
[2.54]
(.300 ) TYP
[7.62]
EXAMPLE BOARD LAYOUT
CDIP - 5.08 mm max height
CERAMIC DUAL IN LINE PACKAGE
14
SEE DETAIL B
SYMM
14X ( .039)
[1]
7
SYMM
LAND PATTERN EXAMPLE
NON-SOLDER MASK DEFINED
SCALE: 5X
8
.002
MAX
[0.05]
ALL AROUND
(.063)
[1.6]
(R.002 ) TYP
[0.05]
DETAIL A
SCALE: 15X
METAL
SOLDER MASK
OPENING
METAL
( .063)
[1.6]
SOLDER MASK
OPENING
DETAIL B
13X, SCALE: 15X
.002 MAX
[0.05]
ALL AROUND
4214771/A 05/2017 www.ti.com
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TI’s published terms of sale for semiconductor products ( http://www.ti.com/sc/docs/stdterms.htm
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Table of contents
- 1 FEATURES
- 1 DESCRIPTION
- 1 Connection Diagram
- 2 Simplified Schematic
- 2 Detailed Schematic
- 3 Absolute Maximum Ratings
- 3 Quality Conformance Inspection
- 4 LF147 883 Electrical Characteristics DC Parameters
- 4 LF147 883 Electrical Characteristics AC Parameters
- 5 LF147 SMD Electrical Characteristics DC Parameters
- 5 LF147 SMD Electrical Characteristics AC Parameters
- 6 Typical Performance Characteristics
- 10 Pulse Response
- 11 APPLICATION INFORMATION
- 12 Typical Applications