Sanyo EP92H User's Manual

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Sanyo EP92H User's Manual | Manualzz

Cell Phone Devices

'06-04

SANYO's leading-edge technologies support advances in portable electronic equipment.

With the increasingly wide adoption of 3G and later cell phone infrastructure, cell phones are featuring even more advanced and diverse functionality.

The speed with which multimedia functionality is being adopted is increasing, and that trend is not limited to Japan, but is spreading worldwide.

SANYO has, for the first time in the industry, adopted a 1/9-type CCD image sensor for cell phones.

SANYO is moving towards the megapixel age in camera cell phones, starting with the chip size package (CSP).

Furthermore, SANYO continues to contribute to the development of the cell phone market with efforts such as developing

SANYO's unique Integrated System in Board module technology that achieves even higher densities and thinner form factors, developing QVGA OLED displays, the Easy Radio IC TM series that makes it easy to include a radio receiver in portable equipment, providing an extensive lineup of motor drivers for zoom, autofocus, and other functions in cell phone cameras, and developing power supply ICs for high pixel count CCDs.

Higher pixel counts, further miniaturization, and lower power.

To respond to these market needs and to provide new areas of added value for our customers' products,

SANYO uses their subtle technological arts to expand their lineup of diverse chipsets and individual devices.

Notes on Package Types and Naming

The package names used in this documentation are designed to indicate rough classification of the packages used, and do not necessarily indicate the formal name of each individual package.

Refer to the delivery specifications document for the particular product for the package dimensions figure and the formal name of the package.

C O N T E N T S

CONTENTS

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

3

SANYO Group Cell Phone Components

⋯⋯⋯⋯⋯⋯⋯⋯

4

[SANYO Original technology]

Integrated System in Board

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

6

Integrated System in Board Application Products

(Standard Products)

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

8

Cell Phone Block Diagram Examples

⋯⋯⋯⋯⋯⋯⋯⋯⋯

10

Frame Transfer Full-Color CCD Sensors

⋯⋯⋯⋯⋯⋯⋯

12

1/4-Type 3.2 MP CCD Camera Module for Cell Phones

14

System-on-chip FM Radio ICs for Miniature Cell Phones

⋯⋯⋯

16

System-on-chip FM Radio ICs Easy Radio IC TM Series

18

Sound Generator IC (MIDI)

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

20

Audio Compression IC

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

21

Terrestrial Digital One-Segment Chipset

⋯⋯⋯⋯⋯⋯⋯

22

Cell Phone Video Drivers

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

22

NTSC/PAL Video Encoder

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

23

Earphone Mic Solutions

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

24

LED Driver ICs

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

26

New Charge Pump ICs

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

28

Motor Drivers for Cell Phones

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

30

Amorphous Optical Sensors

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

32

Cell Phone Discrete Devices

⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯

34

SANYO's Lineup of High-Reliability Discrete Devices

38

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products.

However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing

3

Here we introduce several technologies that SANYO has pushed to the limits.

Mega Pixel CCD

Camera Module

Small discrete devices

FM Tuner IC

Amorphous

Optical Sensor

Sound Generator

IC

FEM

(Front End Module)

POSCAP

Vibration Motor

SAW Filer

ASM

(Antena Switch

Module)

Die Electric Filter

&

Duplexer

4

Integrated

System in Board

SAW Duplexer RGB Chip LED

Charge Pump DC/DC LED Driver

LCD

(SANYO EPSON IMAGING

DEVICES CORPORATION)

Battery Speaker

5

SANYO Original technology

Module technologies that achieve high-density and thinner form factors

Integrated System in Board Process Lineup

ISB-Solo

● Thickness of only 0.45 mm (0.65 mm if resistors are included) realizes excellent thermal radiation and short development TAT

● Optimal for SiP implementation of small-scale block that includes semi-power semiconductors.

■ Assembly structure examples

■ Application example (Cell phone charger circuit block)

Earlier mounting Integrated System in Board

6

Integrated System in Board Top surface

Back surface

4.45

×

4.45

×

0.65 mm 3

Mounting area reduced by 80%

ISB-Duo

● Adopts unique SANYO-developed 0.2 mm thickness high-density substrate (2 layers)

Line 40 µ m / Space 40 µ m at 25 µ m thickness copper foil,

Via diameter 100 µ m / Via land diameter 150 µ m

● Thickness of only 0.53 mm (0.73 mm if resistors are included) realizes high-density mounting

● Optimal for SiP implementation of high-frequency (up to 10 GHz) blocks, blocks that require performance or EMC workarounds based on component placement/wiring pattern, and blocks that require partial high-density mounting.

■ Assembly structure examples ■ Application example (Clock detector block)

Earlier mounting Integrated System in Board

Integrated System in Board

Top surface Back surface

4.3

×

4.3

×

0.73 mm 3

Mounting area reduced by 58%

ISB-Quad

● Adopts unique SANYO-developed 0.24 mm thickness high-density substrate (4 layers)

● Thickness of only 0.6 mm realizes high-density mounting

● Optimal for SiP implementation of high-frequency (up to 10 GHz) blocks, blocks that require performance or EMC workarounds based on component placement /wiring pattern, and subsystems that require highdensity mounting.

● Chip-on-Board type

■ Assembly structure examples

ISB-Duo

Passive components

(resistors and capacitors)

WS-CSP Flip Chip

ISB-Quad 0.24 mm

Integrated System in Board is a type of SiP (system in package) technology, and is a module technology that achieves high densities and thinner form factors by using SANYO's unique substrate and mounting technologies. The Integrated System in

Board lineup consists of three types of process: ISB-Solo, ISB-Duo, and ISB-Quad. Which process is used is selected based on the application.

In addition to standard products, customer specified circuit blocks can also be converted to Integrated System in Board using an optimal process, thus creating a new module device in a short time.

Noise suppression effect (measured)

Reasons noise can be reduced by Integrated Sysytem in Board

● Reduced wiring area due to implementation as miniature modules

● Integration of noise reducing components

● Supply voltage stabilization by using dedicated layers for power supply and ground

Integration of noise reducing components

LSI

Dedicated power supply/ground layer

Wiring on board

Integration of noise reducing components

Microcontroller

SRAM

Surface scan using a field probe

ISB-Duo (2-layer ISB)

Separate microcontroller and SRAM

Noise is reduced significantly

Integrated System in

Board stack structure

(high-density mounting)

Integration of noise reducing components

10 mm

×

10 mm

Microcontroller

SRAM

■ Evaluation results using a microcontroller and SRAM

(Surface probe method - 30 MHz to 1 GHz)

Heat dissipation effect (simulation)

73

65

57

97

89

81

49

41

33

25

Typical BGA

MK

Z

Y X

Integrated System Board package

MK

Z

Y X

Integrated System Board that dissipates heat

MK

Y X

Maximum temperature

92.7 [

°

C]

Temperature difference

38.4

°

C

Temperature difference

52.3

°

C

Maximum temperature

54.3 [

°

C]

Maximum temperature

40.4 [

°

C]

Analysis conditions

Chip heat generation

Chip size

Land size

Atmospheric temperature

Cooling conditions

Analysis model

3 [W]

4 ✕ 4 ✕ 0.3 [mm 3 ]

5 ✕ 5 ✕ 0.03 [mm 3 ]

25 [ ° C]

Ideal cooling of the solder lower surface; 25 [

°

C]

1/4 model (since symmetrical)

7

SANYO Original technology

Module technologies that achieve high-density and thinner form factors

8

Thin Form, Miniature 1 or 2 Channel DC/DC Converter Power Supplies

SR Series

These products combine a step-up DC/DC converter, n-channel power MOSFET, and Schottky barrier diode devices in a single module. A switching step-up power supply can easily be implemented with just the addition of external voltage setting resistor, coil, and capacitor components.

Compared to discrete components with Integrated System in BoardBlock Diagram (SR10010)

Earlier mounting Integrated System in Board

Di

TR

Integrated System in Board

Top surface Back surface

3.4

×

3.4

×

0.65 mm 3

Mounting area reduced by 35%

Product lineup

Type No.

SR10010

SR10020

SR10030

SR10110

SR10210

SR103XX

SR20010

Number of channels

Type

1ch Step-up type

2ch

Step-down type

– power supply type

Oscillator frequency

180 kHz

300 kHz

180 kHz

100 kHz

100 kHz

--------

180 kHz

EXT

CE

IC

GND

VDD

FB

Withstand voltage

20 V

20 V

30 V

20 V

20 V

--------

20 V

Size Status

ES samples/MP support

ES samples/MP support

3.4

×

3.4

×

0.65 mm 3 ES samples/MP support

In volume production

In volume production

-------- Under development

5.0

×

5.0

×

0.65 mm 3 ES samples/MP support

Earlier mounted

Charge control circuit

10.0

× 10.0 = 100.0 mm 2

+

Regurator IC

3.0

× 3.0 = 9.0 mm 2

Integrated system in Board

Mounting area reduced by 80%

Size: 109.0 mm

2

→ 19.80 mm

2

2002

ISB-E17-0

4.4 5 × 4.45 = 19.80 mm 2

2004

Here we introduce examples of ICs used for cell phones implemented as modules using Integrated System in Board.

NTSC/PAL encoder+Video driver+Audio codec+Speaker amplifier

LC822964

New product

Featuring

Video Block

● One output system

Low-cost version specialized for cell phones

● Supports a wide variety of input data (ITU-R601/SQ)

● No output coupling capacitors required

● High performance

- Switching noise does not appear on the screen due to the use of charge pump technology

- Voltage sag does not occur

● Built-in 6th order low-pass filter: fc = 7.5 MHz

● Standby mode power consumption: 0 µ A

Block Diagram

Audio Block

● D/A converter signal-to-noise ratio: 98 dB (A weighting), THD: 84 dB at 48 kHz

● A/D converter signal-to-noise ratio: 90 dB (A weighting), THD: 80 dB at 48 kHz

● Programmable ALC/noise gate

● Stereo/monaural microphone interface

● Built-in headphone driver

● Low power consumption

● 450 mW output (Vcc = 3.6 V, 1 kHz, THD = 1%)

● Power saving and standby functions

I 2 S

CCIR601

Audio I/O block

Audio Codec

ADC

DAC Volume

ALC

Heaphone amplifier

TV output block

NTSC/PAL Encoder LC822962

IIC I/F

Timing

Generator

ITU-R601/SQ

I/F

NTSC/PAL

Video Encoder

Speaker amplifier

LA74220C

Speaker amplifier

75

Video Driver

LA73074C

Microphone amplifier

Composit video output

Current mounting area

84.88 mm 2

+ Passive components

Sound I/O Block

Audio codec

5.2

×

5.2

×

0.8 mm 3

Speaker amplifier

5.0

×

5.0

×

0.8 mm 3

TV Output Block

NTSC/PAL encoder

5.0

×

5.0

×

1.0 mm 3

Video driver

2.8

×

2.8

×

0.8 mm 3

Mounting area can be reduced by over 50%

Integrated System in Board

45 mm 2

(6.0

×

7.5 mm 2 )

Sound I/O + TV output

9

SANYO devices support megapixel class cameras and provide extensive functionality

10

LED Driver

LV5202PL

13-ch 9-LED driver

LV5203FN

13-ch 11-LED driver

P26, P27

Under development

Under development

LV5204PL

13-ch 11-LED driver

LV5213LP

3-ch RGB-LED driver

Under development

New product

High-Efficiency Charge Pump Type

LC410591

4 LEDs

Under development

LC410592

7 LEDs

For main LCD backlights

Under development

P20

64 or 128-Voice Polyphony

Sound Generator IC Series

LC823872 New product

These ICs can generate up to 128 sounds at the same time and include

3D Audio functions.

This is the latest sound generator IC that even supports new melody formats such as Mobile XMF, and provides the highest functionality in the series as an independent sound generator product.

Sound Generator +

Audio Compression IC

P20

LC823553 New product

These ICs can generate up to 64 sounds at the same time and include 3D Audio functions.

This is a combined product that integrates ultralow-power MP3 and

AAC decoder functions, and is optimal for use in cell phones for true audio aficionados.

LC823501 New product

This model corresponds to a low-price version of the LC823553 with certain functions removed, and is a combined product that integrates an ultralowpower MP3 decoder with a sound generator IC that supports 64-voice polyphony.

P21

MP3 and WMA Decoder IC

LC823231

By using dedicated circuits with a hardwired structure to implement the MP3 and WMA decode functions, these ICs achieve extremely low power levels.

MP3/AAC/AAC+Decoder

LC82335X Under development

P16 to P19

1-Chip FM/AM Tuner ICs

LV24020 New product

LV24010

(FM+RDS)

New product

LV24003

(FM+source selector+ headphone amplifier)

New product

LV24100 New product

(FM+AM)

These revolutionary devices are self-contained FM radio ICs that require no external components.

P24

Earphone/Microphone

Solutions

S.T.F.D.

Under development

(Single Transducer Full Duplex)

SANYO has developed a chip that supports communication with just an earphone.

● Conversation is possible even without a microphone

● Achieves clearly audible conversation even in noisy environments

FM/AM tuner

Charge pump

LED driver

KEY

RF

Baseband processor

(CPU)

Amorphous optical sensors

P32, P33

*: A separate coil is required for applications that include an AM radio

Sound generator

Audio compression decoder

Memory

Flash memory

External memory

Since the next generation of cell phones will include an even wider variety of functions than ever before, we expect that dedicated multimedia processors and devices will be required.

SANYO provides a wide range of devices required by next generation cell phones, and can provide powerful support for your cell phone development efforts.

Integrated Audio/Video ICs

LC822964 New product

Integration of an NTSC/PAL encoder, video drivers, an audio codec, and a speaker amplifier IC in a single package using ISB technology. The mounting area can be reduced by 50% or more.

Audio codec

NTSC/PAL encoder

Video driver

SP

MIC

Display controller

P9

Headphone

TV

LCD display

NTSC/PAL Encoder

LC822961

LC822963

LC822971

P23

New product

Under development

The cell phone display can easily be connected to a TV for viewing.

These devices support a wide variety of input data rates (ITU-

R601/SQ).

The LC822971 includes 16 Mbits of

SDRAM and allows the CPU to draw graphics without concern for the TV display rate.

P22

Video Driver

LA73074CL New product

Autofocus

Optical zoom

P30, P31

Ultraminiature Package 2-Phase

Stepping Motor Drivers

LB1906CL

LB1935CL

LB1935T

1-ch Low-Saturation

Forward/Reverse Motor Driver

LB1938T

2-Phase Excitation Motor Driver

LB1801CL New product

Constant Current Driving Motor Driver with

1-ch H Bridge and Thermal Shutdown Curcuit

LB1941CL

LB1941T

2-ch stepping + 1-ch Constant Current

Forward/Reverse Motor Driver IC

LB8682CL

1.5-ch Constant Current

Forward/Reverse Motor Driver IC

LB8683CL Under development

Auto Foucus Piezo Actuator

LV8071LG Under development

Battery

Application processor

Graphic memory

Power supply control

Integrated System in Board

P8, P9

Motor driver

(Miniature series)

Megapixel CCD camera module

Sub-camera

CIF/VGA

Charge pump

P28, P29

Diversity antenna

Terrestrial broadcast one-segment

OFDM demodulator

One-segment tuner

Frequency conversion

Terrestrial Broadcast One-Segment

OFDM Demodulator IC

LC74112 Under development

The adoption of diversity synthesis technology makes stable reception possible.

Terrestrial Broadcast One-Segment

Frequency Conversion IC

LA8101 Under development

The adoption of direct conversion technology obviates the need for a

SAW filter and supports miniaturization.

P22

P12 to P15

Cell Phone 1/4-Type 3.2 MP CCD

Camera Chipset

LC99359(CCD)+

LC99812(DSP) New product

The extensive depth of field provided by these camera modules means the user never has to worry about focus.

These camera modules are optimal for camera cell phones that need to provide easy and convenient imaging.

Cell Phone 1/7-Type VGA

Resolution CCD Camera Chipset

LC99268(CCD)+

LC99809(DSP)

These camera modules are optimal for low-end camera cell phones. These ultraminiature camera modules are so small that they do not interfere with the design of cell phone.

Cell Phone 1/9-Type CIF

Resolution CCD Camera Chipset

LC99267(CCD)+

LC99807(DSP)

These modules are optimal for sub-camera of video conferencing cell phone products.

11

High image quality, ultraminiature size, and low power makes these devices optimal for use in cell phones

Frame Transfer Full-Color CCD Sensors

Frame Transfer CCD

Achieves the industry’s smallest optical size class by using the frame transfer CCD, which makes it possible to reduce feature sizes while maintaining sensitivity.

Sensitivity was increased by adopting a simple single-layer gate gap structure and thin-film polysilicon.

FT-CCD CMOS IL-CCD

Device Density Comparison

Comparison of chip sizes required to acquire the same imaging device area

Imaging area

PD

=Transfer area

Low voltage

High sensitivity

Storage area output

Horizontal shift register

[storage 1/3 compression Type]

Imaging area output

High voltage

Horizontal shift register

PD

Amplifier

Low voltage

X direction register

PD: Photo Diode

Cross Section Comparison

The FT CCD method uses no elements that block the entrance of light, and thus they can capture light from a wider range of incidence angles.

Reducing the device height is possible

Micro Lens

Photo Diode

Micro Lens

Photo Diode

Micro Lens

P+ N+ N+

P-Sub

Photo Diode

P+ N+ N+

Comparison of Differences in Electronic Shutter Types

CCD sensor CMOS sensor (1/4 VGA)

12

Newly developed

High sensitivity

Low moire

In the 1.0-MP CCD, SANYO developed a new charge accumulation method.

Low moire, high sensitivity, and a high frame rate achieved by pixel addition during preview and spatial filter processing.

Imaging area

Imaging area

Mixing area

Storage area

Horizontal transfer

FT-CCD structure

Mixing area

Storage area

Compressed to 1/3 the number of lines by combining 3 pixels.

R+2G 2B+G

2R+G B+2G

R, G, and B are extracted by calculations

SANYO fabricates frame transfer (FT) CCD sensors using unique technologies with ultrafine design rules and provides them as modules assembled using advanced leading-edge mounting technologies.

SANYO makes a point of providing fine and delicate semiconductor devices in forms that our customers will find approachable and easy to use.

CCD drive circuit and image processing implemented in a single package

Multifunction DSP chip

A charge pump type voltage step-up circuit that features minimal noise generation, and the supply voltages required for system drive are generated efficiently with just the supply of a single +2.9 V power supply. This design is also effective at achieving reduced power consumption.

SANYO implemented, in a single package, the timing generator circuit required for system drive and all the analog and digital processing required to accept the CCD output by taking advantage of the SANYO CMOS analog/digital hybrid process and MCP (multi-chip package) technologies.

Roadmap

Megapixel

CCD chipset

2004 2005

LC99353

LC99810 1.0M

LC99359

LC99812 3.2M

2006

High image quality

Dynamic range of

VGA motion picture and 3.2-MP still picture has expanded

VGA CCD chipset

LC99268

LC99808

CIF CCD

chipset

LC99267

LC99807

Near infrared

CCD chipset

LC99704

LC99268G

LC99809

30 fps

LC99268FL High reliability

LC99117 Near infrared

Inproved stability at high-temperature

(85

°

C)

Coexistance between near infrared sensitivity and color

Chip Set

LC99359

LC99268FL

LC99117

Color/B&W

Color

Color

B&W

Resolution

Still Motion

3.2M

VGA

CIF

VGA

VGA

CIF

Sensitivity

Still Motion

High Low

High

Very High

Dynamic Range

Motion

Normal

Wide

Wide

Frame Rate

Motion

30

15

30

Output

Motion

Digital

Digital

Digital

CCD Module Basic Structure Example

CCD module

Imaging area

Storage area

CLK

+2.9 V

Single power supply

Multifunction DSP

Charge pump

Power supply circuit

CCD driver

Registers for picture arrangement

/Output mode/etc.

CCD timing generator AE/AWB controller

Horizontal shift register

Output amplifier

Correlated double sampling

AGC

8-bit

ADC

Analog front end processor

Digital color signal processor

I 2 C bus

RGB/YUV output

HREF/VREF

13

14

High image quality, ultraminiature size, and low power makes these devices optimal for use in cell phone

1/4-Type 3.2 MP CCD Camera Module for Cell Phones

1/4-Type 3.2 MP CCD Chipset

LC99359+LC99812

Chipset Example

Actuator

Iris driver

Shutter driver

AF driver

CCD

Mechanical shutter

Optical Iris

3 or 4

Lens

LC99359

LC99812(MCP)

CCD driver

Control

Analog signal processing

Digital signal processing

Charge pump power supply circuit

2.9V single power supply

Memory

I 2 C-BUS

Flash memory

MCK

YUV output

HREF/VREF

PCLK

Introducing the Component Devices

3.2 MP Frame Transfer CCD Image Sensor

LC99359

● Diagonal: 1/4 type

● 3.2M pixels

● Effective pixels: 2079 × 1554 (H × V)

● Square pixels (1.8 × 1.8 µ m 2 )

● Color filters: Primary color (RGB) Bayer

● Package: CSP

New product

High performance DSP for LC99359

LC99812 New product

● On-chip CCD driving timing generator and CCD driver

● On-chip power supply circut for driving charge pump type CCD

● AGC

● YUV and RGB output signal

● Power saving mode

● Built-in smear correction circuit, automatic dropout correction circuit

● Shading correction

● Noise control circuit

● Timing generator to drive the mechanical shutter

● Scaling and zoom functions

● Timing generator for auto-focus control, auto-exposure control, autowhite balance control, and mechanical iris control

● Supply voltage: 2.9 V (single-voltage operation)

● Package: BGA128

The stable and reliable image quality provided by CCD image sensors. The simultaneity of an image in which the whole image was captured at the same instant. A great depth of field that makes focusing unnecessary.

Even if the camera is only a cell phone cameras, the instant captured is, for the user, still an important instant in their life. This is why SANYO is committed to providing products that make no compromises.

Great Depth of Field

This is a truly easy-to-use camera, since it has a wide range, from close at hand to far away, over which subjects are in focus, and thus it is difficult to accidentally create blurred out of focus images.

7 m 9 cm

Far

6 m

Near

When used in applications such as cell phones, this camera can easily take photographs such as the one shown above, since the user can check a preview image while shooting.

3 m

Mechanical Shutter

Smear does not occur during still imaging when used in a module that includes a mechanical shutter.

Module that includes a 2-stage (f/3.5

and f/7.0) optical aperture

Including a mechanical shutter Not including a mechanical shutter

Photo

Modules that use this CCD Chipset

IGT99353M-SUB1 IGT99268GC-ST1 IGT99268C-ST1

Type

CCD sensor

DSP

Size

Remark

1/4.5 1.0 MP

LC99353

LC99810

Mechanical shutter

IGT99267J-ST IGT99267J-SUB

1/7 VGA

LC99268GFB

LC99809

8 ✕ 8 ✕ 5.3 mm 3 (Typ.)

VGA 30 fps

1/7 VGA

LC99268FBX

LC99808

8 ✕ 8 ✕ 5.3 mm 3 (Typ.)

VGA 15 fps

1/9 CIF

LC99267FB

1/9 CIF

LC99267FB

LC99807 LC99807

8.4

✕ 10.3

✕ 5.1 mm 3 (Typ.) 8.4

✕ 16.0

✕ 5.1 mm 3 (Typ.)

Connector on board

15

An FM radio can be easily included in a limited space in a small product

System-on-chip FM Radio ICs for Miniature Cell Phones

FM Radio IC

Easy Radio IC TM LV24000 Series

New product

The LV24000 family devices are FM radio ICs that require absolutely no external components.*

These devices include not only the FM radio function, but source selector, master volume control, tone controls,

headphone amplifier, and other functions in the same tiny 5.0 × 5.0 × 0.8 mm 3 VQLP package.

These ICs are superb for adding new FM radio functionality in the small limited space available in existing products, such as cell phones and other portable electronic equipment.

Featuring

● Absolutely no external components required

● Absolutely no adjustments required

● Low IF frequency (110 kHz) adopted for improved selectivity

● No FM detection discriminator required

● Built-in adjacent channel interference function (114 and

190 kHz)

● New tuning technique

● Ultrahigh sensitivity reception achieved by low-noise mixer input circuit

● Low-current standby mode obviates the need for a power supply switch

● RDS composite output

● Three-wire bus interface adopted (clock, data, and NR-W)

● Digital AFC function

● Soft muting and high-blend stereo (3-stage programmable)

● Supports manual search, automatic search, and autopreset functions

● Supports reception in all regions worldwide (all Japanese,

European, and US bands can be received by changing just the software)

● Master volume control

● FM: 76 to 108 MHz

● Source selector function (LV24001)

● Headphone amplifier (LV24002)

Not only reducing the device prices but also reducing the various costs during development

Comparison with earlier products

Earlier products

No external components requried

SANYO Easy Radio IC

TM

LV24000

Including All the Functions

FM function (LV24020)

FM+AM function (LV24100)

FM+RDS function (LV24010)

FM+amplifier function (LV24003)

16

*: A separate coil is required for applications that include an AM radio

An adjustment-free FM radio function can be included with absolutely no external components.

Since an ultraminiature 5.0 × 5.0 × 0.8 mm 3 package is used, this device is extremely useful for including an FM radio function in cell phones, PDAs, memory audio players, and other portable electronic equipment.

Application Example

Cell phone (1)

LV24000: FM radio function

Cellular

Phone

(Basic)

FM

Source

Selector

Volume Head Amp

LV24000

Cell phone (2)

LV24002: FM radio + source selector

+ headphone amplifier functions

Cellular

Phone

Source

Selector

Volume

Head Amp

FM

LV24002

LV24002 Block diagram

FM Ant.

LV24002

Quadrature

Oscillator

Tuning

System

Quadrature

Mixer

Selectivity Demodulator

LINE-IN L

LINE-IN R

Beep

Generator

Source

Selector

Volume

& Tone

Control

Digital

Interface

CLK

DATA

NR_W

Power

Switch

Stabilisator

Stereo

Decoder

Deemphasis

Headphone

Amplifier

LINE-OUT L

LINE-OUT R

HEADPHONE L

HEADPHONE R

17

An FM radio can be easily included in a limited space in a small product

System-on-chip FM Radio ICs

Easy Radio IC

TM

Series

Function and lineup

Function

&

Spec

FM

Master Volume

Tone Control

Beep

Generator

Source Selector

Headphone

Amplifier

AM

RDS

Demodulator uP I/F

Schedule

Package

Tuning

Icco

MP

VQLP40

TSSOP24

LV24000 LV24002 LV24020 LV24100 LV24010 LV24003 LV24200

Supported Supported Supported Supported Supported Supported Supported

Supported

Supported

Supported

Supported

Supported

Supported

Supported Supported

Supported

4mW at 32

Supported

Supported

10mW at 32

Supported

Supported

3 wire 3 wire 3 wire 3 wire 3 wire 3 wire

I 2 C/SPI/

3 WIRE

Soft

18mA

Soft

22mA

Soft

14mA

Soft

14mA

Soft

14mA

Soft

20mA

Self

14mA

Available Available Available Available Available Available Available

Supported Supported Supported Supported Supported Supported Supported

Supported T.B.D

T.B.D

T.B.D

T.B.D

T.B.D

18

2004

Baseband processor

Application processor

Microcontroller, etc.

FM radio tuner IC

LV24003

Headphone

No external components required

*

SANYO Easy Radio IC Road Map

Under Mass production

Under Development

Under Planning

LV24XXX

AM/FM/Power low power consumption

+Source selector

-Headpone AMP

LV24002

LV24000

FM

LV24003

Power output level up

LV24010

+RDS

LV24100

+AM

LV24020

Low power consumption

2005 2006

This is what has changed since the earlier products!

Three points about the Easy Radio IC

TM

No external components required

*

Makes cost reductions possible

Miniature package

Ultraminiature

5

×

5

×

0.8 mm 3 size

High-sensitivity reception

Achieves clear audio

Changing Total Costs

1. The analog circuit design technology (know-how based on long experience) that has been necessary up to now is no longer required.

2. Although even more time will be required to create the initialization block during software development, this block will be able to correct product sample-to-sample variations, radically reducing the testing and adjustment during the manufacturing process , and as a result, reduce total costs.

Furthermore, since software once developed can be reused in later products, this effort is not wasted.

Comparison of software development costs

Itemized comparison of software development costs

Although the first initialization is required, this can correct for product sample-to-sample variations.

Initialize

Volume adjustment and tone control program

Frequency conversion tuning control

I/O control

SANYO

Volume adjustment and tone control program

Frequency conversion tuning control

I/O control

Other company

Cost difference

Inspection

Adjustment

Software development

Circuit design

IC price

Inspection

Adjustment

Software development

Circuit design

Cost difference

Inspection

Adjustment

Simple corrections

Software development

IC price

SANYO Other company

Initial product

Inspection

Adjustment

Software development

Circuit design

Circuit design

IC price IC price

SANYO Other company

Follow-on product

SANYO can provide sample software and algorithms to even further reduce the burden on software developers.

*: A separate coil is required for applications that include an AM radio

19

Sound Generator IC (MIDI)

SANYO has developed ICs that, in addition to support for even more sounds, also include new functions such as support for new standard melody formats and 3D audio.

Integrates 128-voice polyphony + PCM, 3D surround, 3D positioning* and Mobile XMF support

LC823872 New product

Featuring

● Capable of generating up to 128-voice polyphony in a full PCM sound generator

128 GM sounds + 47 drum sets + 32 sound effects sounds (conforms to GM1)

● Includes a 3D surround function and a 3D positioning* function that allows the specification of positioning information that positions the generated sound at an arbitrary position in three-dimensional space.

● Supports not only the Mobile XMF new melody format but also a variety of other formats

● User Customized Sound function that allows the user to register arbitrary sounds

● Supports up to four songs worth of MIDI data and can play up to four channels of ADPCM (PCM) data at the same time

● Includes a 4-band parametric equalizer that can provide optimal equalization for the speakers used

● Supports karaoke and Java applications: JSR135, JSR2348. Supports special effects such as pitch bend, vibrato, delay, reverb, chorus, Doppler, and compression.

● Supply voltage: internal 1.5 V, I/O 1.8 to 2.8 V

● Package: FBGA64 (5 × 5 × 1.2 mm)

Integrates 64-voice polyphony + PCM, 3D surround, 3D positioning, Mobile XMF support and MP3/AAC decoding

LC823553 New product

Featuring

● Capable of generating up to 64-voice polyphony in a full PCM sound generator (conforms to GM1)

● Includes a 3D surround function and a 3D positioning* function that allows the specification of positioning information that positions the generated sound at an arbitrary position in three-dimensional space.

● Supports not only the Mobile XMF new melody format but also a variety of other formats

● User Customized Sound function that allows the user to register arbitrary sounds

● Supports up to four songs worth of MIDI data and can play up to four channels of ADPCM (PCM) data at the same time

● Includes a 4-band parametric equalizer that can provide optimal equalization for the speakers used

● Supports karaoke and Java applications: JSR135, JSR2348

● Includes an MP3 and AAC decoder function. The industry’s lowest power consumption: 8.5 mW for both MP3 and AAC

● Built-in 8-band graphic equalizer

● Supply voltage: internal 1.8/1.3 V, I/O 2.85 V

● Package: WL-CSP64 (6.1

× 6.1

× 0.9 mm 3 )

20

Integrates 64-voice polyphony + PCM, 3D surround and MP3/AAC decoding

LC823501 New product

Featuring

● Capable of generating up to 64-voice polyphony in a full PCM sound generator (conforms to GM1)

● Integrated 3D surround function that creates a rich feeling of spaciousness

● Includes an MP3 decoder function. The industry’s lowest power consumption: 8.5 mW for MP3

● User Customized Sound function that allows the user to register arbitrary sounds

● Supports up to four songs worth of MIDI data and can play up to four channels of ADPCM (PCM) data at the same time

● Includes a 4-band parametric equalizer that can provide optimal equalization for the speakers used

● Supports karaoke and Java applications: JSR135

● Supply voltage: internal 1.8/1.3 V, I/O 2.85 V

● Package: PFBGA89 (6.0

× 6.0

× 0.8 mm 3 )

*: 3D positioning function

Function that can create a realistic impression of space even from cell phones that cannot provide an adequate speaker separation.

Support for 24 hours of playback

Audio Compression IC

Although previous audio playback periods have been largely limited to 3 to 5 hours, it is now possible to achieve playing times of 24 hours or longer by adopting SANYO audio compression ICs.

MP3/WMA Decoder

LC823231

Featuring

● Ultralow power (MP3: 10 mW, WMA: 15 mW)

● Supported formats

MPEG1, MPEG2, MPEG2.5 (all sampling frequencies, all bit rates)

WMA

● Digital volume and tone control circuits

● Digital equalizer and audio leakage prevention functions (D/A converter based)

● ∆∑ D/A converter and class D amplifier

● PCM I/O interface

● Sleep mode

● Crystal oscillator frequency: 16.9344 MHz (44.1 kHz × 384)

● Sampling frequencies other than 44.1 kHz supported with built-in PLL circuit

Single-Chip Audio

LC82335X Under development

The LC82335X ICs support MP3, AAC, and AAC+.

By implementing the MP3, AAC, and AAC+ decoding functions in a hardwired structure, these ICs achieve an ultralow power consumption that would be impossible in a DSP based structure.

● Hardwired MP3, hardwired AAC, and hardwired

AAC+.

● Ultralow power consumption: 10 mW

● Buffer size: 10 KB

● Built-in YY filter

● SD interface

● ARM7TDMI

Host

CPU

ARM7TDMI

MP3 hard wired decoder

AAC hard wired decoder

YY filter surround

EMT

Stereo output

SIO

ROM

RAM

DP buffer

Input buffer

AAC+ hard wired decoder

PLL

SD I/F

NAND controller

SD card

NAND flash

21

Terrestrial Digital One-Segment Chipset

Miniature reception modules with low power consumption that achieve stable reception under rapidly changing conditions are required for cell phones and other portable terminals. SANYO has established independently developed diversity synthesis technology and the industry’s first direct conversion technology that together meet these requirements.

UHF Ant.

LNA

LNA

Frequency conversion (LA8101)

LPF

π

/2

LPF

π

/2

LPF

LPF

ODFM demodulation LSI (LC74112)

A/D

A/D

A/D

A/D

E

F

C

MPEG-TS output

PLL OSC

Direct conversion technology adopted

No SAW filter is required, making

further miniaturization possible

Diversity synthesis technology adopted

Makes stable reception possible

Due to the adoption of direct conversion technology

Large external components such as a SAW filter are not required

Image cancellation using analog circuits is no longer required, and at the same time as reducing the size of the circuit and the power consumption, circuit performance does not degrade over time or due to temperature fluctuations.

This approach achieves antenna diversity, which is effective at improving reception performance.

22

Cell Phone Video Drivers

Video driver

LA73074CL

● No output coupling capacitors required

● Low-voltage drive (2.7 to 3.6 V)

● Voltage sag does not occur

New product

● Built-in sixth-order low-pass filter (fc = 7.5 MHz)

● Standby mode power consumption: 0 µ A

● The amplifier gain can be selected (6, 9, or 12 dB) from

DAC

V_IN

3

A-GND 1

GND 5

CLAMP

CLK_OUT

6

LPF

GAIN_CTL

Low: 6dB

High: 9dB

Open: 12dB

2

AMP

Video

Driver

Minus Voltage

Generator

ND1

7

V

CC

_N

8

V

CC

10

Power

Save

4

P_SAV_CTL

Low: Active

High: Stanby

Open: Stanby

9

V_OUT

75

NTSC/PAL Video Encoder

This IC makes it possible to display the cell phone’s LCD screen contents or image data that was taken with the camera and is stored in the camera’s memory on a TV (video input).

Memory

Flash memory

Baseband processor

Application processor

LCD

LC822961

LC822971

Frame memory

LC822961 equivalent

NTSC/PAL Encoder

LC822961

LC822963 New product

Converts base band processor generated video and provides other functions for TV output.

● Miniature package (CSP42: 3.3 × 3.78 mm 2 )

● 10-bit D/A converter with built-in 75 Ω driver

● Supports a wide variety of input data rates (ITU-R601/SQ)

● The LC822963 is an MCP package version of the LC822961 audio operational amplifier (LA6358N).

● Application examples: TV games, video players

NTSC/PAL Encoder with On-Chip DRAM

LC822971 Under development

Data written to memory can be continuously output to a TV without being sequentially updated using the internal frame memory.

Once the data has been written it can be displayed with essentially no load on the microcontroller.

● On-chip 16 Mbit SDRAM. Allows drawing by the CPU without concern for the TV display rate.

● Rotation processing (at write), enlargement processing (at display)

● The NTSC/PAL encoder block is the same as that in the LC822961.

● Application examples: Photograph album shows, business presentation tools

CLK

SEL

CTL bus

Data

CPU I/F

16-Mbit SDRAM (MCP)

VGA

Size

(5 Mbits)

SDRAM controller

PLL

D/A converter and

75

driver Composite video output

DAC

DRAM writer

Timing generator

H/V filter

H/V ccalar

Display writer

NTSC/PAL video encoder

LC822961

23

24

Developing a chip that can support phone conversations with just an earphone.

Earphone Mic Solutions

Under development

What is an earphone mic?

SANYO is developing a chip that can support phone conversations with just an earphone.

Conversation is possible without taking off your earphones.

STFD (single transduce full duplex) technology makes a separate microphone unnecessary!

Increased flexibility in end product design

Phone conversions are possible even in crowds or noisy environments

Since the sound is picked up directly in the ear, wind and other sounds can be reduced.

Better audio quality than bone conduction microphones

Since an even clearer voice sound is possible, it is easy to identify the speaker.

● New applications in various other wireless markets

Phone conversations are possible without removing one’s earphones when listening to music.

Single Transducer Full Duplex

S.T.F.D.

Tympanic

The headphone diaphragm catches the weak audio signal emitted from the tympanic

Vocalization

Tympanic

Vibrations in the air

Diaphragm

Transmission

Simultaneous transmission and reception at a single diaphragm

Reception

Vibrations in the air

To the circuit

Signal conversion using a DSP.

Signal transmission while maintaining clarity.

Wind sounds

Higher audio quality

Bone conduction microphones

Earphone mic

Noise is reduced

Hands free

There are also new applications

Resistant to noise

Development roadmap

Evaluation board verification

STFD function confirmation

First generation

For business equipment

For PC peripherals

For portable accessories

Integration

STDF evaluation board

2005

Second generation

For portable equipment

For wireless equipment

Functions

• STFD

• Volume

2006

Lower power consumption

Higher functionality

Added functionality

• Noise canceler

• Speach speed conversion

• Hands free

2007

25

LED Driver ICs

Switching power supply LED drivers

These are LED drivers that can provide a high-capacity output up to a total of 500 mA using a switching power supply technique, and cover applications such as main LCD backlights, sub-LCD backlights, camera flash systems, and fullcolor LED indicators.

Gradation production using full-color LEDs is also supported (automatic).

LV5202PL

● 13-channel 9-lamp LED driver

(Main LED: 4, Sub RGB: 1, Lighting LED: 3, Singe RGB:1)

● Supports 3-color backlights appropriate for simply monochrome displays for sub-displays.

● Switching power supply technique: Can provide up to 500 mA output

● Supports I 2 C bus

● Ultraminiature package:QFN32 (4.0

× 4.0

× 1.0 mm 3 )

Under development

Automatic blinking

(color changing) in hardware is possible

3ch

3ch

9 LEDs

2 RGB

AUTO

Switching

500 mA

I 2 C

LV5203FN

● 13-channel 11-lamp LED driver

(Main LED: 4, Sub LED: 2, Lighting LED: 4, Singe RGB: 1)

● Switching power supply technique: Can provide up to 500 mA output

● Three-wire serial bus support

● Ultraminiature package:VQFN32 (5.0

× 5.0

× 0.85 mm 3 )

11 LEDs

1 RGB

AUTO

Switching

500 mA

3-wire

Serial

26

LV5204PL

● 13-channel 11-lamp LED driver

(Main LED: 4, Sub LED: 2, Lighting LED: 4, Singe RGB: 1)

● Switching power supply technique: Can provide up to 500 mA output

● Supports I 2 C bus

● Ultraminiature package:VQLP32 (4.0

× 4.0

× 0.85 mm 3 )

11 LEDs

1 RGB

AUTO

Switching

500 mA

I 2 C

Under development

Under development

VQLP32

SANYO provides LED drivers that support automatic gradation production using full-color LEDs and can provide high-capacity outputs up to a total of 500 mA using a switching power supply technique as well as white LEDs for backlights using a charge pump method optimal for white LEDs.

Drivers for 3-color LEDs that have an external control interface

LV5213PL

● 3-channel 1-lamp LED driver (Singe RGB: 1)

● Switching power supply technique: Can provide up to 80 mA output

● Three-wire serial bus support

● Ultraminiature package: VCT16 (2.6

× 2.6

× 0.85 mm 3 )

1 LED

1 RGB

AUTO

Switching

80 mA

3-wire

Serial

Under development

Charge pump type LED driver

This is a 4-lamp white LED driver for main LCD backlights that allows the brightness to be adjusted with an external PWM input.

Generates the optimal voltages for white LEDs with a high-efficiency charge pump type step-up circuit.

Can provide a constant current output up to a total of 140 mA.

Under development

LC410591

● 4 channels (Main LED:4 )

● Charge pump power supply technique: Can provide up to 104 mA output

● Supports brightness adjustment over a serial data input (10 steps)

● Power saving mode

● Soft start function

● Input voltage 2.7 to 5.5 V

● Ultraminiature package:VQFN16 (4.0

× 4.0

× 0.85 mm 3 )

4 LEDs

Charge pump

104 mA

3-wire

Serial

LC410592

● Two groups for a total of 7 channels (Main LED: 4, Sub LED: 3)

● Charge pump power supply technique: Can provide up to 140 mA output

● Supports brightness adjustment using an external PWM input (input for each group)

● Automatic switching between 1 × and − 0.5

× step-up modes

● Power saving mode

● Soft start function

● Input voltage 2.7 to 5.5 V

● Ultraminiature package:VQFN16 (4.0

× 4.0

× 0.85 mm 3 )

Under development

7 LEDs

Charge pump

140 mA

PWM

Control

27

Support for High-Resolution CCDs

New Charge Pump ICs

28

Features of New Charge Pump ICs

CCD image sensors require a high drive voltage of 10 to 20 V. This 10 to 20 V level is created by stepping up the 3 V power supply level.

Since conventional charge pump voltage step-up technologies suffer from increased power loss when used to step up the original voltage by over three times, their use in cell phones was problematic.

SANYO has, however, discovered a way of fusing their high level analog circuit and device technologies to overcome this problem.

This new charge pump technology can step up a regulated voltage by a factor of three or higher with an efficiency as high as 70%. Furthermore it can provide an output current of several tens of mA.

SANYO was the first in the industry to develop a high-performance charge pump.

This new charge pump technology can provide both positive and negative stepped up levels, can be combined into multiple stages, and can provide multiple output levels. Thus this circuit technology is optimal for use in future camera cell phones that include a megapixel-class CCD image sensor.

High efficiency

(Prior to the regulator: 90 to 95 %)

Coilless, low noise

Supports high output current designs

The only external components are thin form capacitors (no coils or diodes required)

Can provide both positive and negative stepped-up outputs

Supports fine step-up step sizes

+0.5 × n × V

DD

-0.5 × n × V

DD

(n: integer)

Optimal for use as the power supply in portable equipment

IPBlock diagram

Clock

VDD

C1

Clock generator & driver

C2 Cn Cn+1

VIN Charge pump VOUT Regulator

V

O

Sample characteristics of a high-current charge pump (single supply voltage

→±

3

×

)

Output voltages from positive and negative step-up operation

Dependency of efficiency on the supply voltage

90

■ Plus step-up

12

Positive step-up voltage vs. output current

■ Minus step-up

-12

Negative step-up voltage vs. output current

80

70

60

50

40

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

30

20

10

0

0

V

DD

=3.3V

At I

OUT

=50 mA, efficiency=80.6%

At I

OUT

=100 mA, efficiency=72.0%

Maximum efficiency: 80.8%

10 20 30 40 50 60 70 80 90 100

Output current, I

OUT

(mA)

10

8

6

4

2.9 V

3.7 V

3.3 V

2

0

0

I

OUT

=-50 mA

At V

DD

=2.9 V, V

PP

=7.78 V

At V

DD

=3.3 V, V

PP

=9.03 V

At V

DD

=3.7 V, V

PP

=10.26 V

10 20 30 40 50 60 70 80 90 100

Output current, I

OUT

(mA)

-10

-8

-6

-4

2.9 V

3.3 V

3.7 V

-2

-0

0

I

OUT

=50 mA

At V

DD

=2.9 V, V bb

=-7.44 V

At V

DD

=3.3 V, V bb

=-8.71 V

At V

DD

=3.7 V, V bb

=-9.96 V

10 20 30 40 50 60 70 80 90 100

Output current, I

OUT

(mA)

This IC is based on a unique SANYO idea and is a high-efficiency charge pump IC that was newly-developed taking advantage of CMOS technologies that fuse SANYO's circuit and process technologies. This IC is optimal for power supplies in portable electronic equipment.

This IC introduces technologies that completely overturn the previous common knowledge that although charge pump circuits were low noise, they suffered from poor efficiency.

Charge pump power supply application

The ability to provide a stepped-up voltage with low noise makes this circuit optimal for embedding in modules.

3 V

3 V

Charge pump

Charge pump

+15 V(10 mA)

-8 V(5 mA)

+7 V(500

µ

A)

-8 V(5 mA)

CCD

LTPS

3V Charge pump +4.5 V(100 mA) White LED

CCD Power Supply IC for Camera Cell Phones

LV5711FN

Regulates a 3.3 to 4.5 V battery level

to 3.1 V and steps up that level 3×

and 6× using a charge pump, to provide the two regulated power supply levels required by the CCD image sensor.

VH = +15.0 V

VL = -8 V

Two independent charge pump systems are provided for VH and VL

Built-in regulators for the analog system power supply, vertical driver system, and DSP core

Block diagram

3.3 to 4.5 V

1

µ

F

OUT2

1

µ

F

VBAT3

VBAT4

7

10

13

OUT3

11

1

µ

F

VSS2

9

OUT4

12

1

µ

F

0.1

µ

F

FVREF

26

VDD3 17

0.47

(VDD ✕ 1)

0.47

µ

µ

F

F

(VDD ✕ 2)

0.47

µ

F

(VDD ✕ 3)

VSS4

19

VSS5

15

C21A

20

C21B

18

C22A

21

C22B

16

C23A

22

C23B

14

1

µ

F

VL_C24

(VDD ✕ 3)

23

VL_C25

24

1

µ

F

STBY 30

VBAT2

8

1.8 V / 100 mA

LDO

-3 times step up circuit

-8-V Reg

SLEEP 29

1.2-MHz

Oscillator

31

EN

Note: Short OUT1 to VDD1 through VDD4.

Under development

3.1 V / 100 mA

LDO

3.1 V / 1 mA

Bandgap voltage reference

1.19 V

Timing generator

Sequence generator

1/2 Divider

4

VBAT1

3.1 V / 100 mA

LDO

6 times step up circuit

15-V Reg

28

VDD4

25

VSS7

VSS1

6

OUT1

5

39

VDD1,2,3,4

VDD1

1

µ

F

32 VDD2

40

C11A

38

C11B

41

C12A

37

C12B

0.22

µ

F

(VDD ✕ 1)

0.22

µ

F

(VDD ✕ 2)

42

C13A

36

C13B

0.22

µ

F

(VDD ✕ 3)

43

C14A

0.22

µ

F

(VDD ✕ 4)

35

C14B

44

C15A

0.22

µ

F

34

C15B

33

VSS3

3

1

(VDD ✕ 5)

VSS6

VH_C16

(VDD ✕ 6)

1

µ

F

2

VH_C17

1

µ

F

27 NC

* Values in parentheses are actual

applied voltages to the capacitor.

29

Ultraminiature Package

Motor Drivers for Cell Phones

Motor Driver ICs for Cell Phones

Miniature Driver Series

Camera Cell Phone Driver Lineup

Shutter

LB1941T/CL

Constant Current

Voice Coil Motor

Iris diaphragm

LB1938T/CL

800 mA

LB8681CL New product

Constant Current 1.5 ch

Stepping Motor

(2-phase excitation)

LB8682PL

Constant Current 1 ch + 2 ch

Stepping Motor

(1-2-phase excitation)

PIEZO

(SIDM)

Focus Zoom

New product New product

LB8686PL

1.5 ch ✕ 2

Under development

Under development

30

Lens Driver IC for Cell Phones

LB1906CL

For Auto-Focus Motors

Saturated control and 1-2 phase excitation drivers

Block diagram

VCC

IN1

IN2

IN3

IN4

60 k

80 k

60 k

80 k

60 k

80 k

60 k

80 k

1

µ

F

OUT1 Stepping motor

OUT2

OUT3

OUT4

GND

Demand for camera cell phones is increasing rapidly not only in Japan, but in most markets around the world as well.

While compact, high image quality cameras are in demand in the cell phone market, there are also increasing desires for highlevel camera functions such as mechanical shutters and autofocus.

SANYO developed even further their motor driver technologies nurtured through years of experience in the digital camera field and provides these technologies for use in camera cell phones as ultraminiature package motor drivers that require few external components.

Two-phase excitation motor drivers

LB1801CL

For autofocus and zoom

● Supports an FR position detection output

● Low saturation voltage output

● Two-phase excitation driver

● Low-voltage drive

Drive is possible from 2.2 V

Compact Package

Block diagram

IN1

IN2

12-pin 2.8 mm Package

ENA

VCC

New product

1

µ

F

OUT1 Stepping Motor

OUT2

INM

1.3 V

R

L

OUT3

OUT4

GND

COMP BIAS

Constant current driver with H bridge × 1.5 ch

LB8683CL

For Shutter and Iris Diaphragm System

Block diagram

VCC

IN1

Reference voltage circuit

0.2 V

+

Constant current control amplifier

CPU

IN2

IN3

Under development

OUT1

Shutter

OUT2

Iris

OUT3

Thermal protection circuit

GND RFS RFG

RF

Auto Foucus Piezo actuator

LV8071LG

For Auto-Focus Motors Block diagram

Under development

Focus

PWM H bridge

Sequence circuit

ENA STEP M1

31

Achieving Low Power and Superb Viewability

Amorphous Optical Sensors

32

Amorphous Silicon Solar Cells

Amorphous Optical Sensors

These devices are a type of photodiode that can detect the presence/absence of ambient light, or the intensity of ambient light.

Illumination-dependent characteristics of ISC Amorphous optical sensor pattern examples Amorphous optical sensor spectral sensitivity

Visible wavelength amorphous optical sensor

Human visual sensitivity

Single-crystal silicon optical sensors

1

0.5

400 500 600 700 800

Wavelength [nm]

900 1000

High sensitivity in the visible region

The human eye is sensitive to light with wavelengths from about 400 nm to about 700 nm.

Since these amorphous optical sensors have sensitivity to essentially the same wavelengths, they provide sensing that is close to that of the human eye.

Measured at FL (for color illuminator): 1 to 10 kLx

at SS (Solar Simulator) : 10 to 10k Lx

1.E-03

1.E-04

[AM-30-26]

1.E-05

1.E-06

1.E-07

1.E-08

1.E-09

1.E-10

1 10 100 1,000 10,000 100,000

Illumination [Lux]

The output current is proportional to the illumination

Since the output current changes proportionally to the light striking the sensor, these devices provide precise detection.

2.1

0.88

0.84

[AM-30-26]

Flexible pattern geometries and sizes

These devices support designs with sizes and shapes that correspond to the target application.

Amorphous Optical Sensor Application Examples

Automatic adjustment of LCD backlight and operating panel buttons

These sensors can be used to sense the ambient illumination level and automatically turn off these lamps in bright operating environments. This reduces unnecessary power consumption and creates LCD screen display that is easy to see whatever the ambient lighting.

● Increased operating time for portable electronic equipment due to reduced power consumption!

● LCD backlight level automatically adjusted to just the right level for viewing according to the ambient illumination level

Cell phone with built-in optical sensor

Bright environments

LCD backlight OFF

Button lamps OFF

5 to 20mA

About 300Lx

LCD backlight ON

Dark environments

LCD backlight ON

Button lamps OFF

55 to 70mA

About 3Lx

Button lamps ON

95 to 110mA

Bright environments Dark environments

Cell phone without built-in optical sensor

Bright environments

LCD backlight ON LCD backlight ON

Dark environments

LCD backlight ON

OFF

LCD backlight

Automatic brightness adjustment ON

Button lamps

Button lamps ON

95 to 110mA

Unnecessary power consumption occurs

Unnecessary power consumption occurs

Button lamps ON

95 to 110mA

Button lamps ON

95 to 110mA

These devices are a type of photodiode that can detect light with about the same sensitivity as the human eye. Since these devices flexibly support a wide range of end product designs and sizes, they can be used to control the LCD backlight and button lamps in cell phones to implement power saving automatic brightness adjustment

Amorphous Optical Sensor Structure

Like amorphous silicon solar cells, amorphous optical sensor use the photovoltaic effect in semiconductors.

When light hits a semiconductor, electrons and holes are created, the electrons diffuse in the n-type semiconductor, and the holes diffuse in the p-type semiconductor. As a result, a current will flow when the two semiconductor types are connected externally.

Transparent electrode p i

Light

+

+

+

+

+

+

+

+

+

+

+

+ +

+

+

+

+

+

+

+

+ n

Metallic electrode

(+) Anode

(-) Cathode

Electron

+

Electron hole

Amorphous Optical Sensor Circuit Examples

With an operational amplifier Without an operational amplifier

3V

Amorphous

Optical Sensor

(AM-30-26)

A

The current output from the amorphous optical sensor is converted to a voltage, and signal processing is applied to that voltage.

Normally, an operational amplifier is used for linear amplification.

C R

Amorphous

Optical Sensor

(AM-30-26)

The amorphous optical sensor is connected to a resistor and the voltage is input directly to an A/D converter for discrimination.

Amorphous Optical Sensor Product Lineup

Type No.

Short-circuit current (I SC , typical)

AM-30-26

External dimensions (mm)

2.1

×

2.0 mm

2

(glass thickness: 0.4 mm)

1.2 A *

1

Dark current (V R = 50 mV) MAX.

10 pA

* 1 : at 1000Lux, Fluorescent Light for color illuminator

Contact your SANYO sales representative for details on these products

33

Handling More Data Even Faster. Supporting Needs for Higher Performance with

Peripheral Components

SANYO's Lineup of High-Reliability

Discrete Devices

Bipolar Transistor for LNA

Low noise, High gain transistors

(fT=20 GHz)

SBFP405M, SBFP420M...etc.

GaAs MMIC products for antenna switches and local switches

Low insertion loss MMIC /

High isolation MMIC

SPM3211, SPM3212,

SPM3215, SPM3218...etc.

Devices for Li-ion batteries

Ultralow on-resistance MOSFET series

ECH8601, FTD2017A...etc.

Schottky barrier diodes

SBS804...etc.

Junction FETs for ECM

Ultrathin package: VTFP

TF218TH, TF208TH, TF202(SSFP)...etc.

Devices for CCD camera module

Ultrahigh-frequency transistors

EC3H02B, 2SC5538, 2SC5539...etc.

Schottky barrier diodes

EC2D01B, SB0203EJ...etc.

Bipolar transistor for VCO

Low phase noise transistors

EC3H02B, EC3H09B...etc.

Transistors for LCD backlight circuits

Precise interface control MOSFETs

5LN01S, 5LP01S

MCH6614(2 in 1)...etc.

Complex devices

MCH5809, CPH5809(MOS + SBD)...etc.

Power management switches

Ultralow on-resistance MOSFET series

VEC2301, SCH2602, ECH8603

MCH6307...etc.

34

LCD backlight ultralow saturation voltage transistors

Low saturation voltage transistor generation map Ultralow saturation voltage transistor development roadmap

High performance

High performance

3rd Generation

MBIT-III

4th Generation

High-speed SW

MBIT-IV

2nd Generation

MBIT-II

Low cost

MBIT-IIs

(Single-layer electrode)

High performance

High performance/ low cost

1st Generation

MBIT

High performance

MCPH, PCP, and TP leads

Package deployment -

Compound CPH deployment

PicoTR surface mounting package deployment

Support for hFE1 ranking

High hFE support - ECSP

¤ package

High voltage (80 V and over)

- High output support

PCP

2002

Small

CPH

2003

MCPH ECH SCH

2004 2005

ECSP

2006

SOP-WL

2007

[Year]

160

140

120

RCE(sat)

140m

Cell density

65Kcell/inch 2

Ultra low saturation voltage

Narrow width of hFE

High switching speed

100 50% down

Cell density

144cell/inch 2

80

30% down

Cell density

144cell/inch 2

Low resistance of collector layer

60 RCE(sat)

70m

40

20

Before

1997 hFE=100 to 400, Width=300 hFE=200 to 560, Width=360

Very low saturation voltage

High switching speed

Small and high power package

1998

1999

2000

2001

RCE(sat)

50m

2002

2003

30% down

2004

2005

RCE(sat)

35m

2006

[Year] hFE=250 to 400, Width=150

SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.

SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data due to the inclusion of high pixel count cameras in this equipment.

Ultralow on-resistance MOS devices for power management

Low and medium output MOS device development roadmap

Reduced on-resistance/reduced voltage drive

Device

¥ Trench structure (T3/4) deployment

(T3: 10 million, T4: 16 million cells per

square inch)

¥ Shallow trench technology established

¥ High ESD resistance technology

established

High performance

Miniaturization

MOSFET

¥ Lineup covering 12 to 200 V

¥ Low on-resistance process

established (T2 trench process)

Miniaturization

Differentiation

Added functionality

ExPD

¥ Low Side

¥ Drivers (high voltage/

low voltage)

¥ PicoLogic TM

Multi Function

T4: 16 million cells per

square inch)

Wireless package

High side switches

2003 2004 2005

Device

¥ Trench structure (T4) -> (T5)

¥ Increased speed and further

improved ultralow on-resistance

¥ Reduced voltage drive

(from 1.5 to 1.2 V)

¥ Shorter turnaround times

(fewer masks)

MOSFET

¥ Deployment to miniature thin-form

products; VEC8, SCH6, ECSP

¥ Wireless package technology

ECH8, TSSOP-WL, FlipFET

¥ Higher power and lower cost

ExPD

¥ Built-in driver MOSFETs

¥ Trench low side

¥ Back gate switches for lithium

battery charging and discharging

¥ High side switches and condenser

microphones for cell phones

2006 2007

[Year]

Ultralow on-resistance MOS device generation map

]

100

90

80

1998

10

µ m

1.1

µ m

RDS(on)

15 m

2000

5

µ m

0.8

µ m

70

60

50

40

30

20

10

0

J5

Low voltage drive

RON ¥ A

RDS(on)

5.3 m

T1

VGS=4V

2002

3

µ m

0.55

µ m

RDS(on)

3.8 m

T2

2.5V

1.8V

2004

2.5

µ m

0.35

µ m

2005

1.8

µ m

0.25

µ m

Low capacity process

RDS(on)

3.2 m

RDS(on)

2.8 m

T3

2006

1.3

µ m

0.18

µ m

Cell density

T4

RDS(on)

2.5 m

T5

Cell pitch

Design rule

270

240

210

180

150

120

90

60

30

0

1.5V

Low VF/IR Schottky barrier diodes for power management

Low V

F

/I

R

Schottky barrier diode development roadmap

High performance

1st Generation

SBD

2nd Generation

Low V

F

+ Ti barrier

New generation

3rd Generation

Low V

F

- high-density

sub + Ti barrier

Low I

R

- high-density

sub + MO barrier

Low V

F

- Low I barrier diode

R

New structure Schottky

Low VF - Low IR

Barrier metal inspection

150¡C guaranteed

Wireless

Multi Function

30V 0.7A 0.55V

PCP

Befor

1998

1999

2000

Parallel, Twin SBD

MOS + SBD

TR + SBD

15V 1A 0.4V

CPH

Compound product deployment

15V 1A 0.4V

MCPH

2001

2002

15V 1A 0.4V

SCH

ECH

30V 1A 0.45V

4pin ECSP

2003

2004

2005

2006

15V 2A 0.4V

×

2

SOP-WL

2007

[Year]

V F – I comparison data for earlier and low-V F devices Schottky barrier diodes

I F -V F (Comparison with earlier SANYO products)

10

Low forward voltage

Miniature thin-form package

Reduced by

0.2 V

New Product

SBS010M

1.0

Contributes to

I F increased efficiency, miniaturization, and thinner form factors

0.1

in end products!

0.01

0 0.1

0.2

0.3

0.4

VF [V]

SB10-015C

Earlier Product

0.5

0.6

0.7

35

36

Handling More Data Even Faster. Supporting Needs for Higher Performance with

Peripheral Components

SANYO's Lineup of High-Reliability

Discrete Devices

FETs for Cell phone ECM

Thin-form package technology

Gold loop and new software (M loop)

Gold loop and new software

Earlier software: the chip and wire were shorted together

φ 20 µ m

Gold loop

WB loop height: 150 m maximum

reduced to 100 m maximum

Thinner island frame and improved frame bending process

1.4

✕ 1.4

✕ 0.6 mm 1.2

✕ 1.4

✕ 0.46 mm 1.2

✕ 1.4

✕ 0.34 mm

Fame thickness

120 m Thinner

Frame bend width

130 m

Fame thickness

70 m

Ultrathinner

Frame bend width

100 m Frame bend width

50 m

Fame thickness

70 m

Island frame thickness:

Reduced by 50 m !

Frame bending process:

Reduced by 80 m !

Total reduction: 130 m !

Establishment of and ultrathin wafer process (4 inch)

Introduction of B/G plus spin etching process!!

Factor workaround

Target thickness: 80

µ m

Spin etching process thickness: 40

µ m

B/G process thickness: 350

µ m

B/G

Target thickness: 80

µ m

Spin etching process thickness: 40

µ m

Spin etching

SANYO established an 80

µ m ultrathin wafer process by improving the wafer chamfering shape and introducing spin etching !!!

Target thickness: 80

µ m

Total package height

Thinner Ultrathinner

SANYO achieved extremely thin packages by combining of the above technologies.

High signal-to-noise ratio technology

JFET noise component

Condenser microphone JFET structure

Drain

JFET

Source pad

Drain pad

Protective diode static voltage workaround

Gate

Gate sub

Polysilicon resistor transient characteristics workaround Source

The high resistance polysilicon resistor (1 to 3 G

) used to stabilized the gate-source potential accounts for a large portion of the JFET noise component.

Result

-106

-106.5

-107

-107.5

-108

-108.5

-109

-109.5

0.00

Smaller

0.50

Larger

1.00

1.50

2.00

2.50

RGS (G

)

3.00

3.50

4.00

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0

2 G

25 G

90 G Ω

2 4 6 8

Potential stabilization time (s)

10

Development

Improved signal-to-noise ratio due to p-channel MOSFET development

Input protection diode

VDD

300‰

Input protection resistor

VDD protection resistor

VIN 1k‰

Pch MOSFET

L / W = 3

µ m / 1 mm

GND

Effect

Pch MOSFET

JFET

Noise voltage (dBV)

-113 to -114

-105 to -107

Insertion loss (dBV) Signal-to-noise ratio (dB) Signal-to-noise ratio evaluation

-5.0 to -5.5

-1.5 to -3.5

68 to 68.5

62 to 64

Enhancement mode

P-ch MOSFET

Potential stabilization time

Potential stabilization time

0.5

0.4

0.3

0.2

0.1

0

0 0.5

1 1.5

Time (s)

2

The potential stabilization time becomes under 1 second in enhancement mode p-channel MOSFETs.

2.5

3

SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.

SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data due to the inclusion of high pixel count cameras in this equipment.

Digital Cell Phone

0.8 GHz, 1.5 GHz

Inner antenna

Low-noise amplifier

Whip antenna

Antenna switches( GaAs MMIC)

SPM3212

SPM3215

SPM3220

SPM3226

Filter switches

( GaAs MMIC)

SPM3212

Power amplifier

SPM3220

SPM3226

Buffer amplifiers

EC3H10B

FS303

FS304

Antenna switch

(Pch MOS)

MCH6305/MCH6307

ECH8603

OSC ( NPN BiP)

EC3H09B, EC3H07B

SBFP420B

Local switches

SPM3212

SPM3220

SPM3226

Li-ion

Battery

(Pch MOS)

ECH8601

ECH8603

(Pch MOS)

MCH6305/MCH6307

ECH8603

Baseband logic

CDMA/TDMA (IS136)

Ext.

Inner antenna

Antenna

Diversity switches

(GaAs MMIC)

SPM3212

SPM3215

SPM3220

SPM3226

Low-noise amplifier

Filter

Buffer amplifiers

(NPN BiP)

EC3H10B

FS303

FS304

Antenna switch Duplexer

Mixer

OSC(NPN BiP)

EC3H09B

EC3H07B

SBFP420B

Filter switches for TDMA

(GaAs MMIC)

SPM3211

SPM3212

Local switches

(GaAs MMIC)

SPM3212

SPM3220

SPM3226

Filter switches

(GaAs MMIC)

SPM3212

SPM3220

SPM3226 for TDMA

PA module

Filter switches for PCS and TDMA

SPM3212, SPM3220, SPM3226

P H S

Low-noise amplifiers

Inner antenna

Antenna

EC3H07B EC3H10B

SBFP405B SBFP420B

SBFP540B

Diversity switch

Antenna switches

SPM3212

SPM3220

SPM3215

SPM3226

Power amplifier

Buffer amplifiers

(NPN BiP)

EC3H07B

FS303

Li-ion battery

CPH3106(PNP Bip.),

MCH3106(PNP Bip.)

MCH6305(Pch MOS)

MCH6307(Pch MOS)

OSC EC3H09B

EC3H07B

SBFP420B

CPH3106(PNP Bip.)

MCH3106(PNP Bip.)

MCH6305(Pch MOS)

Local switches

(NPN BiP)

SPM3212

SPM3220

SPM3226

Baseband logic

37

Light, Fast, Saving, and Friendly

SANYO's Lineup of High-Reliability

Discrete Devices

38

Microwave Device Series

● High-frequency silicon transistors for VCO

Usage

Oscillator

Buffer

Oscillator

+ Buffer

Type No.

EC3H09B

EC3H11B

SPFP420B

SPFP540B

2SC5781

2SC5783

EC3H07B

EC3H10B

2SC5646

2SC5782

FS301 (TR1 Side)

(TR2 Side)

FS303 (TR1 Side)

(TR2 Side)

FS304 (TR1 Side)

(TR2 Side)

Package

ECSP

ECSP

ECSP

ECSP

SSFP

SSFP

ECSP

ECSP

SSFP

SSFP

ECSP

ECSP

ECSP

Size

(mm)

1.0

×

0.6

1.0

×

0.6

1.0

×

0.6

1.0

×

0.6

1.4

×

0.8

1.4

×

0.8

1.0

×

0.6

1.0

× 0.6

1.4

×

0.8

1.4

×

0.8

1.2

×

0.8

1.2 × 0.8

1.2

×

0.8

f

T typ.

(GHz)

11.2

10.5

25

29

11.2

10.5

12.5

12.5

10

12.5

12.5

25

12.5

11.2

12.5

11.2

I

C

(mA)

40

30

40

30

70

80

30

70

80

35

80

35

30

70

40

70

V

CEO

(V)

4

4

4.5

4

4

4

4

4

4

4

4

4

4

4.5

4.5

4

P

C

(mW)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

N

F typ.(dB)

1.5

1.3

1.5

1.3

1.5

1.1

1.5

1.5

1.3

1.5

1.5

1.1

0.9

1.5

1.5

1.5

S21e

2 typ.(dB)

6

8.5

9.5

8.5

10.5

17

10.5

8.5

10.5

8.5

5

17

8.5

6

5

10.5

Notes

2SC5645

SBFP420

2SC5645

2SC5781

2SC5782

2SC5781

● GaAs MMIC products for Antenna switches, local switches and other switches

Usage Type No.

Package

Size

(mm)

Switch SPM3220

SPM3226

SPM3227

SPM3211

SPM3212

SPM3215

ECSP

ECSP

ECSP

MCPH6

MCPH6

MCPH6

SPM3501 MCPH6

SPM3211: Reverse control IC of SPM3212

SPM3215: Single control IC

SPM3226: Reverse control IC of SPM3227

1.2

×

0.8

1.2

×

0.8

1.2

×

0.8

2.1

×

2.0

2.1 × 2.0

2.1

×

2.0

2.1

×

2.0

Control

Voltage

(V)

3

2.4 to 5

2.4 to 5

3

3

3

3

Isolation typ.(dB)

Insertion Loss typ.(dB)

Pin1dB typ.(dBm)

Notes

** 16

** 18

** 18

** 16

** 16

** 13

** 0.5

** 0.35

** 0.35

** 0.55

** 0.55

** 1.1

26

22(2.8V)

22(2.8V)

28

28

0.4 to 2.5 GHz Use

0.4 to 2.5 GHz Use

0.4 to 2.5 GHz Use

0.4 to 2.5 GHz Use

0.4 to 2.5 GHz Use

0.4 to 2.5 GHz Use

26

13 1.0

20

Up to 6 GHz Use

** Measured frequency: 2.5 GHz Measured frequency: 1 to 2.5 GHz

Measured frequency: 5.8 GHz Measured frequency: 5 to 6 GHz

Power MOSFETs+ Schottky Barrier Diodes for logic block

Type No.

MCH5801

MCH5815

CPH5802

CPH5811

Package

MCPH5

MCPH5

CPH5

CPH5

Size

(mm)

2.1

×

2.0

2.1

×

2.0

2.8

×

2.9

2.8

×

2.9

V

DSS

(V)

20

12

20

20

I

D

(A)

1.5

1.5

2

3

P

D

(W)

0.8

0.8

0.9

0.9

R

DS(on)

V

GS

=2.5V

max. (

)

280m

450m

200m

82m

V

RRM

(V)

15

15

15

15

I

O

(A)

1

1

0.5

0.5

VF

max. (V)

0.45

0.45

0.4

0.4

I

R max. (

µ

A)

200

200

500

500

As miniaturization and efficiency advance and improve in portable equipment, the needs for further miniaturization and lower power consumption in discrete devices are increasing even faster.

SANYO responds to these needs by providing an extensive line of products that contribute to reduced mounting areas and reduced parts counts in application circuits

Ultralow on-resintance Power MOSFETs for RF and logic block

Type No.

SCH1302

SCH2601(Pch)

(Nch)

SCH2602(Pch)

(Nch)

3LP03M

3LN03M

MCH3411

MCH6305

MCH6307

CPH6311

ECH8603

ECH8611

VEC2302

VEC2303

*VGS=4V, VGS=1.8V

Package

SCH6

SCH6

SCH6

MCP

MCP

MCPH6

MCPH6

MCPH6

CPH6

ECH8

ECH8

VEC8

VEC8

Size

(mm)

1.6

×

1.6

1.6

×

1.6

1.6

×

1.6

2.1

×

2.0

2.1

×

2.0

2.1

×

2.0

2.1

×

2.0

2.1

×

2.0

2.8

×

2.9

2.8

×

2.9

2.8

×

2.9

2.8

×

2.9

2.8

×

2.9

V

DSS

(V)

30

20

12

20

20

30

30

12

30

30

30

20

12

30

12

R

DS

(on)

V GS =4.5V

Max. (

)

*0.165

54m

40m

168m

49m

*1.9

*0.9

0.31

*3.7

*1.9

*0.9

*90m

65m

46m

42m

R

DS

(on)

V GS =2.5V

Max. (

Ω)

0.22

66m

60m

87m

65m

2.8

1.15

0.47

5.2

2.8

1.15

118m

98m

75m

R

DS

(on)

V GS =1.5V

Max. (

)

0.39

0.67

98m

107m

I

D

(A)

3

4

5

5

4

5

3

4

2

0.4

0.7

1.5

0.35

250m

350m

Low saturation voltage transistors for logic block

Type No.

15C01S

30C02S

SCH2101

SCH2201

SCH2503(PNP)

(NPN)

MCH3106

MCH3206

CPH3109

CPH3209

Package

SMCP

SMCP

SCH6

SCH6

SCH6

MCPH3

MCPH3

CPH3

CPH3

Size

(mm)

1.6

×

1.6

1.6

×

1.6

1.6

×

1.6

1.6

×

1.6

1.6

×

1.6

2.1

×

2.0

2.1

×

2.0

2.8

×

2.9

2.8

×

2.9

V

CEO

(V)

15

15

12

15

30

30

12

15

30

30

I

C

(A)

0.6

0.8

0.8

0.8

0.6

0.6

3

3

3

3

P

C

(W)

0.2

0.2

0.4

0.4

0.4

0.4

0.8

0.8

0.9

0.9

h

FE

Min. to Max.

300 to 800

300 to 800

300 to 800

300 to 800

200 to 500

300 to 800

200 to 560

200 to 560

200 to 560

200 to 560

V

CE

(sat)

Max. (mV)

300

280

240

280

220

190

165

150

230

180

C iss typ(pF)

270

680

940

1230

800

1230

510

940

410

40

30

160

7

40

30

Schottky Barrier Diodes for logic block

Type No.

SS1003EJ

SB1003EJ

S0503SH

SS1003M

SB1003M

SBS004M

SBS808M

Package

ECSP

ECSP

SCH6

MCPH6

MCPH6

MCPH3

MCPH5

Size

(mm)

1.6

×

0.8

1.6

×

0.8

1.6

×

1.6

2.1 × 2.0

2.1

×

2.0

2.1

×

2.0

2.1

×

2.0

V

RRM

(V)

30

30

30

30

30

15

15

I

O

(A)

1

1

1

1

0.5

1

1

I

FSM

(A)

5

5

5

5

5

10

10

V

F

max. (V)

0.45

0.55

0.47

0.45

0.55

0.4

0.43

I

R max. ( µ A)

360

15

120

15

15

500

90

Notes

Parallel type

Polarity

Pch

Pch+Nch

Pch+Nch

Pch

Nch

Nch

Pch

Pch

Pch

Pch Dual

Pch Dual

Pch Dual

Pch Dual

Porality

NPN

NPN

PNP

NPN+NPN

PNP+NPN

PNP

NPN

PNP

NPN

39

Ordering Number: EP92H www.global-sanyo.com

Semiconductor Company

Tokyo office

Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Telephone: 81-(0)3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377

● SANYO Electric Co.,Ltd. Semiconductor Company Homepage

URL: http://www.semic.sanyo.co.jp/index_e.htm

This catalog provides information as of April, 2006.

Specifications and information herein are subject to change without notice.

Printed in Japan / April 2006 2d OTE

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