RF2132 - Modelithics, Inc.

NOT FOR NEW DESIGNS

RF2132

LINEAR POWER AMPLIFIER

RoHS Compliant & Pb-Free Product

Package Style: Standard Batwing

VCC 1 16 GND

NC 2 15 RF OUT

Features

„

Single 4.2V to 5.0V Supply

RF IN 3 14 RF OUT

„

„

„

„

„

„

„

„

Up to 29 dBm Linear Output

Power

29dB Gain With Analog Gain

Control

45% Linear Efficiency

On-board Power Down Mode

800MHz to 950MHz Operation

4.8V CDMA/AMPS Handsets

GND

GND

GND

GND

4

5

6

7

BIAS

ESI

13

GNS

11

10

GND

GND

RF OUT

RF OUT

„

Applications

„

4.8V AMPS Cellular Handsets

Product Description

N

EW

PC 8

D

Functional Block Diagram

9 GND

4.8V JCDMA/TACS Handsets

Driver Amplifier in Cellular

Base Stations

Portable Battery-Powered

Equipment

FOR

The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar

Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to

950MHz band. The device is self-contained with 50

Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages.

NOT

Ordering Information

RF2132 Linear Power Amplifier

RF2132PCBA-41X Fully Assembled Evaluation Board

9

GaAs HBT

GaAs MESFET

Optimum Technology Matching® Applied

SiGe BiCMOS

Si BiCMOS

GaAs pHEMT

Si CMOS

InGaP HBT SiGe HBT Si BJT

GaN HEMT

RF MEMS

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Rev B12 DS091003

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

1 of 10

RF2132

Absolute Maximum Ratings

Parameter

Supply Voltage (No RF)

Supply Voltage (P

OUT

<30dBm)

Power Control Voltage (V

PC

)

DC Supply Current

Input RF Power

Output Load VSWR

Storage Temperature

Junction Temperature

Rating

-0.5 to +6.0

-0.5 to +5.0

-0.5 to +5.0 or V

CC

380

+12

10:1

-40 to +150

160

Unit

V

DC

V

DC

V mA dBm

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.

°C

°C

Overall

Parameter

Usable Frequency Range

Linear Gain

Total Linear Efficiency

Efficiency at Max Output

OFF Isolation

Second Harmonic

Maximum Linear Output Power

Adjacent Channel Power Rejection

@ 885 kHz

Adjacent Channel Power Rejection

@ 1.98 MHz

Maximum CW Output Power

Ambient Operating Temperature

Min.

800

27

40

23

-40

Junction to Case Thermal Resistance

Input VSWR

Output Load VSWR

Power Down

FOR

Turn On/Off Time

Total Current

V

PC

“OFF” Voltage

V

PC

“ON” Voltage

Power Supply

NOT

Power Supply Voltage

0.2

3.6

4.2

Specification

Typ.

824 to 849

Max.

950

N

29

45

52

27

-30

28.5

-46

-58

30

EW

31

29

-44

-56

D

+85 dB dBc dBc dBc dBm

°C

Unit

MHz dB

%

%

ESI

GNS

Condition

T=25 °C, V

CC

=4.8V, V

PC

=4.0V,

Freq=824MHz to 849MHz

V

PC

=0V,P

IN

=+6dBm

Including Second Harmonic Trap

IS-95A CDMA Modulation

Pout = 28 dBm

ACPR can be improved by trading off efficiency.

Pout = 28 dBm

°C/W (See graph on page 9.)

<2:1

4.0

4.8

10:1

100

10

0.5

Vcc

5.0

ns

μA

V

V

V

No oscillations

“OFF” State

Operating voltage

Idle Current 40 100 mA V

PC

=4.0V

“ON” State Current into VPC pin 15 20 mA

2 of 10

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

Rev B12 DS091003

RF2132

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

Pin

1

Function Description

VCC1

Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an inductor to V with a decoupling capacitor on the V

CC

CC

,

side. The value of the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for

950MHz. Instead of an inductor, a high impedance microstrip line can be used.

NC

RF IN

Not Connected.

RF input. This is a 50

Ω input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage.

GND

GND

GND

GND

PC

GND

RF OUT

Interface Schematic

RF IN

See pin 1.

From Bias

Stages

VCC

Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance.

Same as pin 4.

Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the batwing and other ground contacts. See evaluation board layout.

Same as pin 6.

ESI

CC

+30dBm RF output power. The maximum power that can be achieved

for depends on the actual output matching. PC should never exceed 5.0V or

V

CC

, whichever is the lowest.

D

Same as pin 4.

RF Output and power supply for the output stage. The four output pins are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability. An external matching network is required to provide the optimum

Same as pin 10.

N

EW load impedance; see the application schematics for details.

PC

F ro m B ia s

S ta g e s

See pin 10.

R F O U T

To RF

Transistors

RF OUT

GND

Same as pin 4.

GND

RF OUT

RF OUT

GND

Same as pin 10.

See pin 10.

See pin 10.

Same as pin 4.

NOT

Rev B12 DS091003

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

3 of 10

RF2132

0.392

0.386

Package Drawing

0.158

0.150

-A-

0.009

0.004

0.021

0.014

0.069

0.064

0.050

NOT

FOR

8° MAX

0° MIN

0.244

0.230

0.060

0.054

0.035

0.016

0.010

0.008

N

EW

D

ESI

GNS

4 of 10

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

Rev B12 DS091003

RF2132

Application Schematic

V

CC

1 nF

Vcc = 4.8 V

Vpc = 4.0 V

100 pF

RF IN

V

PC

P1-1

Interstage tuning (L1) for centering output frequency

C8

J1

RF IN

33 pF

NOT

Adds bias to the first

R1

18 k

Ω amplifier stage for improved linearity

P1-3

100 pF

C12

3.3

μF

C13

1 nF

100 pF

18 k

Ω

1 nF

1.8 nH

C6

100 pF

1.8 nH

1 16

6.8 nH

2 15

5

4

3

3

4

5

6

7

8

BIAS

D

10

9

14

13

12

11

3 pF

ESI

GNS

12 pF

3.3 nH

Evaluation Board Schematic

N

C1

EW

Power supply filtering/bypassing for V cc

C2

11

μF

C3

1

μF

100 nF

C4

1 nF

Vcc = 4.8 V

Vpc = 4.0 V

P1

4.3 pF

100 pF

P1-1

C5

100 pF

1

2

3

VCC

GND

PC

16

P1-3

15 L2

6.8 nH

Bias inductor for the amplifier output stage 14

C7

3 pF

13

RF OUT

Harmonic trap: C7 series resonates with internal bondwires of pins 14 and 15 at

2f

0

to effectively short out 2nd harmonic for optimum gain and efficiency

12

6 11

7

BIAS

L3

3.3 nH

C11

4.3 pF

C9

100 pF

RF OUT

J2

8

10

9

C10

12 pF

Matching network for optimum load impedance

C14

100 pF

Power supply filtering/bypassing for V

PC

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

Rev B12 DS091003 5 of 10

RF2132

Evaluation Board Layout

2” x 2”

NOT

FOR

N

EW

D

ESI

GNS

6 of 10

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

Rev B12 DS091003

RF2132

RF2132 Evaluation Board

Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA

90

80

ACPR 1.98 MHz

70

60

50

40

30

20

10

0

28 26

NOT

FOR

ACPR 885 kHz

Current

24

Total Efficiency

N

EW

20

D

18

Pout (dBm)

ESI

GNS

16 14 12

50

10

0

250

200

150

100

350

300

Rev B12 DS091003

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

7 of 10

RF2132

RF2132 Evaluation Board

Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA

90

80

ACPR 1.98 MHz

70

ACPR 885 kHz

60

50

40

30

20

10

0

28 26

NOT

FOR

Current

24

Total Efficiency

22

N

EW

D

18

Pout (dBm)

ESI

GNS

16 14 12

350

300

250

200

10

0

150

100

50

8 of 10

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

Rev B12 DS091003

170.0

160.0

150.0

140.0

130.0

120.0

110.0

100.0

90.0

80.0

70.0

60.0

50.0

40.0

30.0

20.0

0.0

4.0

Rth versus P

OUT

,

Ambient Temperature=85°C

33% duty PW = 2 msec

100% duty

8.0

12.0

16.0

P

OUT

(dBm)

20.0

24.0

28.0

32.0

N

EW

D

ESI

GNS

NOT

FOR

RF2132

Rev B12 DS091003

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

9 of 10

RF2132

NOT

FOR

N

EW

D

ESI

GNS

10 of 10

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]

Rev B12 DS091003

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