PVD1052 - International Rectifier
PD 1.023D
Series PVD10
Microelectronic
Power IC Relay
Single-Pole, 160mA, 0-100V DC
BOSFET Photovoltaic Relay
®
General Description
PVD10 Features
The Photovoltaic DC Relay (PVD) is a single-pole, normally open solid state replacement for electro-mechanical relays used for general purpose switching of
analog signals. It utilizes as an output switch a unique
bidirectional (AC or DC) MOSFET power IC termed a
BOSFET. The BOSFET is controlled by a photovoltaic
generator of novel construction, which is energized by
radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering
the solid state advantages of long life, high operating
speed, low pick-up power, bounce-free operation, low
thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control,
multiplexing, telecommunications, automatic test
equipment and data acquisition.
The PVD can switch analog signals from thermocouple
level to 100 volts peak DC. Signal frequencies into the
RF range are easily controlled and switching rates up
to 18kHz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes
both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power IC relay.
This advanced semiconductor technology has created
a radically new control device. Designers can now develop switching systems to new standards of electrical
performance and mechanical compactness.
BOSFET Power IC
10 10 Operations
25µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
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Part Identification
Part Number
Operating
Voltage (DC)
Sensitivity
0 – 100V
5 mA
PVD1052
PVD1054
(BOSFET is a trademark of International Rectifier)
Off-State
Resistance
108 Ohms
1010 Ohms
Series PVD10 — BOSFET® Photovoltaic Relay
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVD1052
PVD1054
Units
Minimum Control Current (see figures 1 and 2)
For 80mA Continuous Load Current
For 130mA Continuous Load Current
For 50mA Continuous Load Current
2.0
5.0
5.0
DC
[email protected]°C
[email protected]°C
[email protected]°C
Maximum Control Current for Off-State Resistance at 25°C
10
µA(DC)
2.0 to 25
mA(DC)
7.0
V(DC)
Control Current Range (Caution: current limit input LED. See figure 6)
Maximum Reverse Voltage
OUTPUT CHARACTERISTICS
PVD1052
Operating Voltage Range
Maxiumum Load Current 40°C (see figures 1and 2)
PVD1054
Units
0 to ± 100
V(RMS)
160
mA(DC)
Response Time @25°C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 50 VDC, 0 to 90%
25
µs
Max. T(off) @ 12mA Control, 50 mA Load, 50 VDC, 100% to 10%
15
µs
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 50 mA Load, 5mA Control
Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)
Max. Thermal Offset Voltage @ 5.0mA Control
Ω
8.0
108
1010
Ω
0.2
µvolts
Min. Off-State dv/dt
1000
V/µs
Output Capacitance
8.0
pF @ 50VDC
GENERAL CHARACTERISTICS (PVD1052 and PVD1054)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Operating
Storage
Units
2500
VRMS
1012 @ 25°C - 50% RH
Ω
1.0
pF
+260
-40 to +85
-40 to +100
°C
Max. Load Current mA
Max. Load Current mA
Series PVD10 — BOSFET® Photovoltaic Relay
I LED (mA)
Ambient Temperature (°C)
Figure 2. Typical Control Current Requirements
Load Current (mA)
Input Current (mA)
Figure 1. Current Derating Curves
VDS (Volts)
Figure 3.Typical On Characteristics
LED Forward Voltage Drop (Volts DC)
Figure 4. Typical On-Resistance
IDOff/IDOff 25°C
Input Current (mA)
Series PVD10 — BOSFET® Photovoltaic Relay
Ambient Temperature (°C)
Figure 6. Input Characteristics
(Current Controlled)
I LED (mA)
Figure 5. Normalized Off-State Leakage
LED Forward Voltage Drop (Volts DC)
Delay Time (microseconds)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
Typical Capacitance (picofarads)
Series PVD10 — BOSFET® Photovoltaic Relay
VDD Drain to Drain Voltage
Figure 9. Typical Output Capacitance
Wiring Diagram
Series PVD10 — BOSFET® Photovoltaic Relay
Case Outline
(Dimensions in millimeters (inches))
Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371
http://www/irf.com/
Data and specifications subject to change without notice. 9/96
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