High Level Hybrid Bipolar Preamplifier +40 dBm IP3 50 to 500 MHz These amplifiers were originally developed for NASA and represent the best in Silicon Bipolar Transistor (SBT) amplifier design available today. The use of hybrid combined medium power SBT’s provide high dynamic range and give better reliability than single stage amplifiers. These amplifiers have moderate gain to provide a higher system dynamic range. As always, Angle Linear guarantees unconditional stability of every preamplifier we make. Units can be supplied with internal low pass filters (7 section), 0.25 db loss, -55dbc at 2nd harmonic, -75 dbc at 3rd harmonic. Specify any 50 MHz band, example, Part number HY1318BNE = 130 to 180 MHz or HY1015BNE = 100 to 150 MHz. Gain will be higher at lower end of segment by < 2db. typical specifications: Frequency band 50 to 100 MHz 100 to 150 MHz 150 to 200 MHz 200 to 250 MHz 250 to 300 MHz 300 to 350 MHz 350 to 400 MHz 400 to 450 MHz 450 to 500 MHz Gain (db) 24 21 19 18 17 16 15 13 12 Gain +/- 1.5 db over any 50 MHz segment Noise figure: 2.0 dB +/- 0.3 db return loss in & out: >18 dB Output: IP3 +40 dBm or better IP2 +55 dBm or better Out Comp pt: 1 dB >+28 dBm Units operate from +12.0 to +16 VDC.Internal voltage regulator allows for operation up to +28 VDC but an external dropping resistor is recomended for voltages above +16VDC. Each amplifier has it’s own independent bias current regulator. External and internal high voltage transient suppressors provide 40kV, 1 micro sec. pulse protection. Outout intercept will be reduced with voltages lower than 13.4 VDC. DC current requirement is typically 130 mA at +13.8 VDC. Filtering on the DC terminal provides >80 dB attenuation from 25 MHz to several GigaHertz. Construction is rugged: an irridited aluminum enclosure with stainless steel hardware throughout. Twenty four screws attach the covers and give maximum shielding for the most hostile RF environments. Connectors (tri-metal) have ptfe (Teflon) dielectric with gold pins and are available in type N , TNC & SMA. Dimensions: 3” x 3.5” x 0.9”. Mounting and connector cinfiguration/positions give maximum versatility for rack panel shelf mounting: “E connector” mounting (end) shown, “T” denotes top mounting for higher density packaging (similar to our standard PHEMT (GaAs FET) preamplifiers). These amplifiers are also available in our line of receiver multicouplers. Specify operating voltage. P/N example: HY4050BNE, Hi level bipolar, 400 to 500 MHz, end mounted connectors. Maximum continuous input power +14 dBm Operating temp & storage = -20 to +70 degrees C Add LP suffix for low pass filter and specify highest pass frequency needed. Connectors: N = N, T = TNC, S = SMA. “E” suffix = end mounted, “T” suffix = top mounted Contact Angle Linear for other frequencies http://www.anglelinear.com : 12.06
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