BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000 SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC (SCILLC). FETKY and Micro8 are trademarks of International Rectifier Corporation. ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of MicroSemi Corporation. GreenLine is a trademark of Motorola, Inc. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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WIRELESS Forward How to Use This Guide This book contains information on Analog IC’s, Discrete devices (bipolar power transistors, MOSFETs, rectifiers, Zener diodes, TVS devices) and Standard Logic IC’s available from ON Semiconductor that can be used in Wireless handsets and their accessories. The book is broken up into several sections based on the handset and accessories. The handset and accessories are divided into five blocks consisting of RF/IF, Power Management, Physical Interface, Battery Management, and Power Conversion. Within each of these five blocks you will find various sub–blocks. Each page addresses the Analog, Discrete and Standard Logic devices within that sub–block. Devices are listed along with their function in that stage, key features and a page on which you will find additional information on that device or family of devices in this brochure. Also included is a CDROM. This CDROM contains the data sheets for the devices listed in the brochure as well as other related information all in “pdf” format. http://onsemi.com 3 WIRELESS Turn your handset ON ON Semiconductor, one of the world’s largest suppliers of analog, standard logic and discrete semiconductors for data and power management, designs and manufactures a full range of high volume products with leading–edge silicon and packaging technologies. POWER CONVERSION • Charger/Wall Adapter • DC/DC Car Charger RF/IF • Transmitter • Receiver • Synthesizer BATTERY MANAGEMENT • Protection/Charger Control • Li Ion Battery • NiMH/NiCd Battery POWER MANAGEMENT • Voltage Conversion • Voltage Supervisory PHYSICAL INTERFACE Microphone Ringer Vibrator Backlight/Display Charger Input Smart Card SIM Card (GSM) • • • • • • • http://onsemi.com 4 WIRELESS Table of Contents Page Section 1: Wireless Component Solutions for Handsets and Accessories from ON Semiconductor . . . . . . . . . . . . . . . . . . 7 RF/IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Receiver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Synthesizer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Voltage Conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Voltage Supervisory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Physical Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Microphone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Ringer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Vibrator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Backlight . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Display . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Charger Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Smart Card . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SIM Card (GSM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Power Conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Charger (Wall Adapter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DC/DC Car Charger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Battery Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Protection/Charger Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Li Ion Battery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 NiMH/NiCd Battery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Section 2: Analog IC’s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Section 3: Discrete Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Zener Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 TVS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 Section 4: Logic ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 One–Gate VHC Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 Analog Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 http://onsemi.com 5 WIRELESS http://onsemi.com 6 WIRELESS Section 1 Wireless Component Solutions for Handsets and Accessories from ON Semiconductor http://onsemi.com 7 WIRELESS http://onsemi.com 8 WIRELESS RF/IF RF/IF • Transmitter • Receiver • Synthesizer Transmitter Analog ICs Function Prominent Features Page MDC5001 Bias Stabilizer Active bias for PA, low quiescent current, SOT–363 package 49 MDC5100/5101 Antenna Switch Controller Switch path selector or dual band controller for RF Switch, 3 V logic for direct microcontroller interface, Micro8 package 50, 51 MC33170 PA Controller Dual band, TSSOP–14 package 30 MAX828/829 Charge Pump Voltage Doubling or Inverting, 25 mA, 1.5 V – 5 V Operating Range, SOT–23–5 package 27 MC1121 Charge Pump Voltage Inverting, 100 mA, 2.4 V – 5 V Operating Range, Micro8 package 29 Discrete Devices Function Prominent Features Page NTGS3446T1 PA Switch 20 V, N–Channel MOSFET, 0.065 Ω @ 2.5 V, TSOP–6 package 74 NTGS3441T1 PA Switch 20 V, P–Channel MOSFET, 0.135 Ω @ 2.5 V, TSOP–6 package 74 NTHS5441 PA Switch 20 V, P–Channel MOSFET, 0.083 Ω @ 2.5 V, ChipFET package 74 MTSF3N02HDR2 PA Switch 20 V N–Channel MOSFET, 0.05 Ω @ 2.7 V, Micro8 74 MMVL3401T1 Antenna Switch PIN diode, 32V VR, Low CT, SOD–323 package 73 Standard Logic Function Prominent Features Page 74HC1GXX Control Logic High Speed, Low PD, SC–70/SC–88A packages 86 74VHC1GXX Control Logic High Speed, Low PD, SC–70/SC–88A packages 86 74VHC1G01, 03, 05, 07, 09, 135 Bias Control Open Drain, Low PD, SC–88A/SOT–353 package 86 74HC1G66, 1GT66 Analog Switch Low R(on), Low PD, SC–88A/SOT–353 package 86 http://onsemi.com 9 WIRELESS RF/IF RF/IF • Transmitter • Receiver • Synthesizer Receiver Analog ICs Function Prominent Features Page MDC5001 Bias Stabilizer for LNA Active bias for LNA, low quiescent current, SOT–363 package 49 MDC5100/5101 Antenna Switch Controller Switch path selector or dual band controller for RF Switch, 3 V logic for direct microcontroller interface, Micro8 package 50, 51 MC33765 Power Management IC Five independent LDO outputs, Ultra–low noise, 30, 40, 50, 60 and 150 mA, Enable pins for each output and a common enable pin, TSSOP–16 package 43 MC33263 Single Output LDO Ultra–low noise, 150 mA, On/Off Control, SOT–23L package, Functionally and Pin Compatible with TK112xxA/B Series 31 MC33761 Single Output LDO Ultra–low noise, 80 mA, 1 V On/Off Control, TSOP–5 package 41 MC33762 Dual Output LDO Ultra–low noise, 80 mA, 1 V On/Off Control, Micro8 package 42 Discrete Devices Function Prominent Features Page Bias Resistor Transistor’s Active Bias for LNA NPN or PNP, SC–70/SOT–323 and SC–75 packages 71 MMVL3401T1 Antenna Switch PIN diode, 32 V VR, Low CT, SOD–323 package 73 Standard Logic Function Prominent Features Page 1–Gate Analog Switch High Speed, Low PD, SC–88A/SOT–353 package 86 http://onsemi.com 10 WIRELESS RF/IF RF/IF • Transmitter • Receiver • Synthesizer Synthesizer Discrete Devices Function Prominent Features Page Bias Resistor Transistor’s Bandswitching NPN or PNP, SC–70/SOT–323 and SC–75 packages 71 MMBF2201NT1 Bandswitching 20 V, N–Channel MOSFET, 1 Ω, SC–70/SOT–323 package 74 MMBF2202PT1 Bandswitching 20 V, N–Channel MOSFET, 2.2 Ω, SC–70/SOT–323 package 74 MMVL229AT1 Frequency Control Hi–Q, Low RS, SOD–323 package 73 MMVL535 Frequency Control Hi–Q, Low RS, SOD–323 package 73 Standard Logic Function Prominent Features Page 1–Gate Loop Filter Switch Low R(on), Low PD, SC–88A/SOT–353 package 86 VHC1G66, GT66 Interface with 1.5 V µP Low PD, SC–88A/SOT–353 package 86 http://onsemi.com 11 WIRELESS Power Management POWER MANAGEMENT • Voltage Conversion • Voltage Supervisory Voltage Conversion Analog ICs Function Prominent Features Page MC33765 Power Management IC Five independent LDO outputs, Ultra–low noise, 30, 40, 50, 60 and 150 mA, Enable pins for each output and a common enable pin, TSSOP–16 package 43 MC33263 Single Output LDO Ultra–low noise, 150 mA, On/Off Control, SOT–23L package, Functionally and Pin Compatible with TK112xxA/B Series 31 MC33761 Single Output LDO Ultra–low noise, 80 mA, 1 V On/Off Control, TSOP–5 package 41 MC33762 Dual Output LDO Ultra–low noise, 80 mA, 1 V On/Off Control, Micro8 package 43 NCP500* CMOS LDO Low quiescent current, 150 mA, 1.8 V – 6 V Operating Range, TSOP–5 package 65 MC78PC00 Series CMOS LDO Low quiescent current, 100 mA, Identical Pinout to the LP2980/1/2, SOT–23–5 package 47 NCP1400A* DC–to–DC Converter PWM Boost Converter, 180 kHz, Low quiescent current, Chip enable pin, TSOP–5 package 56 MC33466H DC–to–DC Converter PWM Boost Converter, 50 kHz with internal FET, 100 kHz with external transistor, Low quiescent current, SOT–89 package 37 MAX828/829 Charge Pump Voltage Doubling or Inverting, 25 mA, 1.5 V – 5 V Operating Range, SOT–23–5 package 27 MC1121 Charge Pump Voltage Inverting, 100 mA, 2.4 V – 5 V Operating Range, Micro8 package 29 Discrete Devices Function Prominent Features Page MBRM120/130LT1 Schottky Rectifier Low VF, POWERMITE package 76 Bias Resistor Transistor’s Switching NPN or PNP, SC–70/SOT–323 and SC–75 packages 71 Standard Logic Function Prominent Features Page 1–Gate HC and VHC families Logic High Speed, Low PD, SC–88A/SOT–353 packages 86 *Available Q1, 2001 http://onsemi.com 12 WIRELESS Power Management POWER MANAGEMENT • Voltage Conversion • Voltage Supervisory Voltage Supervisory Analog ICs Function Prominent Features Page NCP300 Voltage Detectors Complementary output, no external delay, TSOP–5 package 57 NCP301 Voltage Detectors Open drain output, no external delay, TSOP–5 package 57 NCP302 Voltage Detectors Complementary output, externally programmable delay, TSOP–5 package 59 NCP303 Voltage Detectors Open drain output, externally programmable delay, TSOP–5 package 59 NCP304 Voltage Detectors Complementary output, no external delay, SC–82 package 61 NCP305 Voltage Detectors Open drain output, no external delay, SC–82 package 61 MAX809/810 Microprocessor Reset Monitor 140 ms minimum output reset delay, SOT–23 package 26 http://onsemi.com 13 WIRELESS Physical Interface PHYSICAL INTERFACE • Microphone • Ringer • Vibrator • Backlight/Display • Charger Input • Smart Card • SIM Card (GSM) Microphone Analog ICs Function Prominent Features Page MC33501/3 Single Op Amp 1 V to 7 V Operating Range, Single Supply Operation, Rail–to–Rail on I/O, Two industry standard pinouts, TSOP–5 package 25 MC33202 Dual Op Amp 1.8 V to 12 V Operating Range, Single Supply Operation, Rail–to–Rail on I/O, Micro8 package 25 Analog ICs Function Prominent Features Page MDC3105 Load/Relay Driver µP Interface, SOT–23 package 48 Analog ICs Function Prominent Features Page MDC3105 Load/Relay Driver µP Interface, SOT–23 package 48 Ringer Vibrator Discrete Devices Function Prominent Features Page Bias Resistor Transistor’s Power Switch NPN or PNP, SC–70/SOT–323 and SC–75 packages 71 MBT35200 Switch 35 V, PNP BJT, Low VCE(sat), TSOP–6 package MMBT6589T1 Switching Low VCE(sat) BJT, TSOP–6 package http://onsemi.com 14 70 WIRELESS Physical Interface PHYSICAL INTERFACE • Microphone • Ringer • Vibrator • Backlight/Display • Charger Input • Smart Card • SIM Card (GSM) Backlight Analog ICs Function Prominent Features Page MC34271 LCD Driver Dual switching regulators, QFP–32 package 45 MAX828/829 Charge Pump Voltage Doubling or Inverting, 25 mA, 1.5 V – 5 V Operating Range, SOT–23–5 package 27 Discrete Devices Function Prominent Features Page MBR0520 Schottky Rectifier 0.5 Amp, Low VF, SOD–123 package 76 MMDL301T1 Schottky Rectifier 30 V, switching diode, SOD–323 package 73 Standard Logic Function Prominent Features Page 1–Gate HC and VHC families Logic High Speed, Low PD, SC–88A/SOT–353 packages 86 Analog ICs Function Prominent Features Page MAX828/829 Charge Pump Voltage Doubling or Inverting, 25 mA, 1.5 V – 5 V Operating Range, SOT–23–5 package 27 Display http://onsemi.com 15 WIRELESS Physical Interface PHYSICAL INTERFACE • Microphone • Ringer • Vibrator • Backlight/Display • Charger Input • Smart Card • SIM Card (GSM) Charger Input Analog ICs Function Prominent Features Page NCP345 Over voltage protection 30 V transient input capability, compatible with 1.8 V Standard Logic Levels, TSOP–5 package 63 Discrete Devices Function Prominent Features Page NTGS3441T1 Switch 20 V, P–Channel MOSFET, 0.135 Ω @ 2.5 V, TSOP–6 package 74 NTGS3443T1 Switch 20 V, P–Channel MOSFET, 0.090 Ω @ 2.5 V, TSOP–6 package 74 MBRM120/130LT3 Schottky Rectifier 1 A, Low VF, POWERMITE package 76 Analog ICs Function Prominent Features Page MC33560 Smartcard Power Management Controller and Interface IC 100% Compatible with ISO 7816–3 and EMV specifications, TSSOP–24 and SO–24WB packages 40 NCN6000* Smartcard Power Management Controller and Interface IC 100% Compatible with ISO 7816 and EMV specifications, Smaller package TSSOP–20 with added programming functions 52 NCN6011* Level Shifter Interface for SIM/SAM cards Simple, low cost flexible microcontroller interface, low quiescent current, TSSOP–14 package, Micro8 package version under development 54 Smart Card Standard Logic Function Prominent Features Page 1–Gate Logic High Speed, Low PD, SC–88A/SOT–353 package 86 *Available Q1, 2001 http://onsemi.com 16 WIRELESS Physical Interface PHYSICAL INTERFACE • Microphone • Ringer • Vibrator • Backlight/Display • Charger Input • Smart Card • SIM Card (GSM) SIM Card (GSM) Analog ICs Function Prominent Features Page NCN6010* Level Shifter Interface and Charge Pump Converter for SIM cards Simple, flexible microcontroller interface, 100% compatible with GSM 11.11, supports 3 V and 5 V SIM cards with built in charge pump converter, TSSOP–14 package 53 NCN6011* Level Shifter Interface for SIM/SAM cards Simple, low cost flexible microcontroller interface, low quiescent current, TSSOP–14 package, Micro8 package version under development 54 Discrete Devices Function Prominent Features Page MSQA6V1W5 ESD Protection Quad Zener, SC–88A package 81 Standard Logic Function Prominent Features Page High Speed, Low PD, SC–88A/SOT–353 package 86 1–Gate MC74LVX3245 Translator 8 bit dual supply, TSSOP–20 package 86 MC74LVX4245 Translator 8 bit dual supply, TSSOP–20 package 86 *Available Q1, 2001 http://onsemi.com 17 WIRELESS Power Conversion POWER CONVERSION • Charger/Wall Adapter • DC/DC Car Charger Charger (Wall Adapter) Analog ICs Function Prominent Features Page NCP1200 Offline Current Mode AC/DC Controller No auxiliary winding required, low standby power, no acoustic noise while operating, low external part count, external MOSFET, SO–8 and PDIP–8 packages 55 MC33363B Offline AC/DC Controller Externally adjustable frequency and current limit, SMPS with onboard 700 V FET, SO–16, DIP–16 packages 35 MC33364 Critical Conduction Offline SMPS Controller Frequency clamp. Requires external MOSFET SO–8, SO–16 packages. 36 NCP4300A Dual Op Amp and Voltage Reference 0.4% Reference, Configurable as voltage and current limit for wall adapter, 3 to 35 V operation, SO–8 package 64 MC33340/342 NiMH/NiCd Charge Controller –∆V termination, time or temperature secondary termination, LED control, SO–8 and PDIP–8 packages 32 MC33341 Secondary Controller Voltage & Current Limit, High or Low Side Current Sensing, Adjustable voltage and current thresholds, SO–8 and PDIP–8 packages 33 Discrete Devices Function Prominent Features Page MTD1N80E Switch 800 V, N–Channel MOSFET, 12 Ω, DPAK package 75 NTD4N60 Switch 600 V, N–Channel MOSFET, 2.3 Ω, DPAK package 75 200 V, 75 ns, VF = 1.25 @ 1.0 A 600 V, 75 ns, VF = 1.25 @ 1.0 A 77 MURS120 Ultrafast Snubber Diode MURS160 Ultrafast Snubber Diode 60, 70, 80 Volt Schottky Rectifiers Forward Diode Flyback Converter Low VF, Various packages 76, 77 P6KE Series Transient Voltage Suppressor 600 watt peak, 100–200 V, Axial lead package 82 1SMB Series Transient Voltage Suppressor 600 watt peak, 100–200 V, SMB package 83 1PMT16A Charger Control Protection 16 V, 175 watt TVS, POWERMITE package 84 http://onsemi.com 18 77 WIRELESS Power Conversion POWER CONVERSION • Charger/Wall Adapter • DC/DC Car Charger DC/DC Car Charger Analog ICs Function Prominent Features Page MC33163 Single–Ended Controller On Chip Power Switch, Voltage Mode, SO–16L and DIP–16 packages 28 TL494 Switchmode Pulse Width Modulation Control Circuit Voltage mode, 2 error amplifiers, DIP–16 package 67 Discrete Devices Function Prominent Features Page MTD20P03HDL Switch 30 V, P–Channel MOSFET, 0.099 Ω, DPAK package 75 MBT35200T1 Switch 35 V, PNP BJT, Low VCE(sat), TSOP–6 package 70 http://onsemi.com 19 WIRELESS Battery Management BATTERY MANAGEMENT • Protection/Charger Control • Li Ion Battery • NiMH/NiCad Battery Protection/Charger Control Analog ICs Function Prominent Features Page MC33349 Single Cell Li Ion Battery Protection Internally trimmed charge and discharge limit protection, SOT–23–6 package 34 NCP800 Single Cell Li Ion Battery Protection Internally trimmed charge and discharge limit protection, TSOP–6 package 66 MC33341 Charge Control for Battery Voltage & Current Limit, High or Low Side Current Sensing, Adjustable voltage and current thresholds, SO–8 and PDIP–8 packages 33 MC33340/342 Battery Charger Control for NiMH & NiCd –∆V termination, time or temperature secondary termination, LED control, SO–8 and PDIP–8 packages 32 MC33202 Dual Op Amp 1.8 V to 12 V Operating Range, Single Supply Operation, Rail–to–Rail on I/O, Micro8 package 25 NCP345 Over voltage protection 30 V transient input capability, compatible with 1.8 V Standard Logic Levels, TSOP–5 package 63 Discrete Devices Function Prominent Features Page MSQA6V1W5 ESD Protection of data lines on SIM and bottom connector Quad Zener, SC–88A package 81 MBT35200 Switch 35 V, PNP BJT, Low VCE(sat), TSOP–6 package 70 MMBT6589T1 Switching Li–Ion protection MOSFET Low VCE(sat) BJT, TSOP–6 package N–Channel, 20 V, 40 mΩ @ 2.5 V TSSOP–8D package 70 NTQD6866 MMDFS2P102 FETKY 20 V, 0.16 Ω, VF = 0.39 V, MOSFET and Schottky, SO–8 package 75 MMDF7N02Z Li–Ion protection MOSFET Dual N–Channel, 0.027 Ω, 20 V, Zener protected gate, SO–8 package 74 MM3Z2V4T1 – MM3Z27VT1 Zener regulator 2.4 – 2.7 volts, SOD–323 package 78 MMBZ5V6ALT1 – MMBZ33VALT1 Dual Common Anode TVS 5.6 – 33 volts, SOT–23 package 79 MMQA5V6T – MMQA33VT1 Quad Common Anode TVS 5.6 – 33 volts, SC–59–6 Lead package 81 MBRM120/130LT3 Reverse Battery Protection 1 Amp, Low VF, POWERMITE package 76 MBR0520, 0530, 0540 Reverse Battery Protection 0.5 Amp, Low VF, SOD–123 package 76 1PMT16A Charger Control Protection 16V, 175 watt TVS, POWERMITE package 84 http://onsemi.com 20 74 WIRELESS Battery Management BATTERY MANAGEMENT • Protection/Charger Control • Li Ion Battery • NiMH/NiCad Battery Protection/Charger Control (cont.) Standard Logic Function Prominent Features Page 1–Gate Control Low R(on), Low PD, SC–70/SC–88A packages 86 MC74VHC1G66 Analog Switch SC–70/SC–88A packages 86 MC74VHC1GT66 Analog Switch SC–70/SC–88A packages 86 MC74VHC1G01, 03, 05, 07, 09, 135 DC Control Bias Over voltage tolerant at output, SC–70/SC–88A packages 86 http://onsemi.com 21 WIRELESS Battery Management BATTERY MANAGEMENT • Protection/Charger Control • Li Ion Battery • NiMH/NiCad Battery Li Ion Battery Analog ICs Function Prominent Features Page MC33349 Single Cell Li Ion Battery Protection Internally trimmed charge and discharge limit protection, SOT–23 6 Lead package 34 NCP800 Single Cell Li Ion Battery Protection Internally trimmed charge and discharge limit protection, TSOP–6 package 66 Discrete Devices Function Prominent Features Page MMDF7N02Z Li Ion Protection MOSFET 20 V, N–Channel MOSFET, 0.027 Ω, Zener protected gate, SO–8 package 74 NTQD6866 Li Ion Protection MOSFET 20 V, N–Channel MOSFET, 0.04 mΩ @ 2.5 V, TSSOP–8D package 74 Zeners ≤ 10 V SOD–123 and SOD–323 packages 78 NiMH/NiCd Battery Analog ICs Function Prominent Features Page MC33340/342 Battery Charger Control for NiMH & NiCd –∆V termination, time or temperature secondary termination, LED control, SO–8 and PDIP–8 packages 32 http://onsemi.com 22 WIRELESS Section 2 Analog ICs http://onsemi.com 23 WIRELESS Operational Amplifiers ON Semiconductor offers a broad line of bipolar operational amplifiers to meet a wide range of applications. From low–cost industry–standard types to high precision circuits, the span encompasses a large range of performance capabilities. These Analog integrated circuits are available as single, dual and quad monolithic devices in a variety of temperature ranges and package styles. Most devices may be obtained in unencapsulated ‘‘chip’’ form as well. For price and delivery information on chips, please contact your ON Semiconductor Sales Representative or Distributor. Single Operational Amplifiers Device IIB (µA) Max VIO (mV) Max TCVIO (µV/°C) Typ IIO (nA) Max Supply Voltage (V) Avol (V/mV) Min BW (Av = 1) (MHz) Typ SR (Av = 1) (V/µs) Typ Min Max Description Package 25 80 1.0 1.0 0.5 0.3 ±3.0 ±3.0 ±18 ±18 General Purpose Precision DIP–8, SO–8 DIP–8, SO–8 50 1.0 0.5 ±3.0 ±22 General Purpose DIP–8, SO–8 20 25 50 1.0 4.5 4.5 0.5 10 10 ±3.0 +3.0 +3.0 ±18 +44 +44 General Purpose High Performance Single Supply DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 25 50 50 4.5 4.5 1.8 10 10 2.1 +3.0 +3.0 +3.0 +44 +44 +44 High Performance Single Supply Low Power, Single Supply DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 50 2.2 1.0 ±0.9 ±6.0 Low V Rail–to–Rail DIP–8, SO–8 50 2.2 1.0 ±0.9 ±6.0 Low V Rail–to–Rail DIP–8, SO–8 Noncompensated Commercial Temperature Range (0°C to +70°C) LM301A LM308A 0.25 7.0 7.5 0.5 10 5.0 50 1.0 Industrial Temperature Range (–25°C to +85°C) LM201A 0.075 2.0 10 10 Internally Compensated Commercial Temperature Range (0°C to +70°C) MC1741C MC34071 MC34071A 0.5 0.5 500 nA 6.0 5.0 3.0 15 10 10 200 75 50 Automotive Temperature Range (–40°C to +85°C) MC33071 MC33071A MC33171 0.5 500 nA 0.1 5.0 3.0 4.5 10 10 10 75 50 20 Extended Temperature Range (–40°C to +105°C) MC33201 250 nA 9.0 2.0 100 Military Temperature Range (–55°C to +125°C) MC33201V 400 nA 9.0 2.0 200 NOTE: Devices shaded in gray are best fit for Wireless Applications. http://onsemi.com 24 WIRELESS Dual Operational Amplifiers Device IIB (µA) Max VIO (mV) Max TCVIO (µV/°C) Typ IIO (nA) Max BW SR Avol (Av = 1) (Av = 1) (V/mV) (MHz) (V/µs) Min Typ Typ Supply Voltage (V) Min Max Description Package DIP–8, SO–8 Internally Compensated Commercial Temperature Range (0°C to +70°C) LM358 0.25 6.0 7.0 50 25 1.0 0.6 ±1.5 +3.0 ±18 +36 LM833 MC3458 1.0 0.5 5.0 10 2.0 7.0 200 50 31.6 20 15 1.0 7.0 0.6 +2.5 ±1.5 +3.0 ±18 ±18 +36 0.5 500 nA 5.0 3.0 10 10 75 50 25 50 4.5 4.5 10 10 +3.0 +3.0 +44 +44 Single Supply, Low Power Consumption Low Noise, Audio Split Supplies, Single Supply, Low Crossover Distortion High Performance Single Supply 50 1.0 0.6 ±1.5 +3.0 ±18 +36 Split or Single Supply Op Amp DIP–8, SO–8 ±18 +36 +44 +44 Split or Single Supply DIP–8, SO–8 High Performance Single Supply DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 MC34072 MC34072A DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 Industrial Temperature Range (–25°C to +85°C) LM258 0.15 5.0 10 30 Automotive Temperature Range (–40°C to +85°C) 5.0 8.0 10 75 20 1.0 0.6 MC33072 MC33072A 0.50 500 nA 5.0 3.0 10 10 75 50 25 50 4.5 4.5 10 10 ±1.5 +3.0 +3.0 +3.0 MC33076 MC33077 MC33078 MC33102 (Awake) (Sleep) 0.5 1.0 750 nA 4.0 1.0 2.0 2.0 2.0 2.0 70 180 150 25 150 31.6 7.4 37 16 2.6 11 7.0 ±2.0 ±2.5 ±5.0 ±18 ±18 ±18 High Output Current Low Noise Low Noise MC33172 600 nA 60 nA 0.10 3.0 3.0 4.5 1.0 1.0 10 60 6.0 20 25 15 50 4.6 0.3 1.8 1.7 0.1 2.1 ±2.5 ±2.5 +3.0 ±18 ±18 +44 MC33178 MC33272A 0.5 650 nA 3.0 1.0 2.0 0.56 50 25 nA 50 31.6 5.0 5.5 2.0 11.5 ±2.0 ±1.5 ±18 ±18 Sleep–Mode Micropower Low Power, Single Supply High Output Current High Performance MC3358 DIP–8, SO–8 DIP–8, SO–8 DIP–8, SO–8 Extended Temperature Range (–40°C to +105°C) MC33202 250 nA 11 2.0 100 50 2.2 1.0 ±0.9 ±6.0 40 fA typ 0.25 0.5 typ 10 2.0 typ – 4.0 typ 4.0 typ +0.9 +7.0 7.0 50 100 typ 100 typ 1.0 0.6 ±1.5 +3.0 Low Voltage Rail–to–Rail Rail–to–Rail with Enable 1.0 V Rail–to–Rail DIP–8, SO–8 Micro8 DIP–8, SO–8 ±13 +26 Split or Single Supply DIP–8, SO–8 MC33206 MC33502 LM2904 DIP–8, SO–8 Extended Automotive Temperature Range (–40°C to +125°C) TCA0372 500 nA 15 20 50 30 1.1 1.4 +5.0 +36 Power Op Amp, Single Supply LM2904V 0.25 13 7.0 50 100 typ 1.0 0.6 ±1.5 +3.0 ±13 +26 Split or Single Supply DIP–8, DIP–16, SO–16L DIP–8, SO–8 50 2.2 1.0 ±0.9 ±6.0 Low V Rail–to–Rail DIP–8, SO–8 Military Temperature Range (–55°C to +125°C) MC33202V 400 pA 11 2.0 200 pA NOTE: Devices shaded in gray are best fit for Wireless Applications. http://onsemi.com 25 WIRELESS 3-Pin Microprocessor Reset Monitors Features: MAX809/810 • Precision VCC Monitor for 3.0V, 3.3V, and 5.0V TA = –40 to +85C, SOT–23 Supplies The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. The reset output is driven active within 20 µsec of VCC falling through the reset voltage threshold. Reset is maintained active for a minimum of 140msec after VCC rises above the reset threshold. The MAX810 has an active–high RESET output while the MAX809 has an active–low RESET output. The output of the MAX809 is guaranteed valid down to VCC = 1V. Both devices are available in a SOT–23 package. The MAX809/810 are optimized to reject fast transient glitches on the VCC line. Low supply current of 17µA (VCC = 3.3V) makes these devices suitable for battery powered applications. • 140msec Guaranteed Minimum RESET, RESET • • • • • • Output Duration RESET Output Guaranteed to VCC = 1.0V (MAX809) Low 17µA Supply Current VCC Transient Immunity Small SOT–23 Package No External Components Wide Operating Temperature: –40°C to 85°C Applications: • • • • Computers Embedded Systems Battery Powered Equipment Critical µP Power Supply Monitoring TYPICAL APPLICATION DIAGRAM VCC VCC PROCESSOR VCC MAX809 RESET INPUT RESET GND GND ORDERING INFORMATION Device Operating Temperature Range Package TA = –40 to +85C +85C, SOT–23 SOT–23 MAX809 MAX810 http://onsemi.com 26 WIRELESS Switched Capacitor Voltage Converters Features: MAX828/MAX829 • • • • • • • • TA = –40 to +85C, SOT–23–5 The MAX828/829 are CMOS “charge–pump” voltage converters in ultra–small SOT–23 5 lead packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion efficiency is typically >95%. Switching frequency is 12kHz for the MAX828 and 35kHz for the MAX829. External component requirement is only two capacitors (3.3µF nominal) for standard voltage inverter applications. With a few additional components a positive doubler can also be built. All other circuitry, including control, oscillator, power MOSFETs are integrated on–chip. Supply current is 50 µA (MAX828) and 115 µA (MAX829). The MAX828 and MAX829 are available in a SOT–23 5 lead surface mount package. Charge Pump in SOT–23 5 Lead Package >95% Voltage Conversion Efficiency Voltage Inversion and/or Doubling Low 50 µA (MAX828) Quiescent Current Operates from +1.5V to +5.5V Up to 25 mA Output Current Only Two External Capacitors Required Tested Operating Temperature Range: –40°C to +85°C Applications: • • • • • LCD Panel Bias Cellular Phones Pagers PDAs, Portable Dataloggers Battery–Powered Devices TYPICAL OPERATING CIRCUIT Voltage Inverter C+ Vin INPUT + MAX828 MAX829 C1 C– V– OUTPUT OUT GND + C2 ORDERING INFORMATION Device Operating Temperature Range Package TA = –40 to +85C +85C, SOT–23 SOT–23–5 MAX828SNTR MAX829SNTR http://onsemi.com 27 WIRELESS Single–Ended Controllers with On–Chip Power Switch These monolithic power switching regulators contain all the active functions required to implement standard dc–to–dc converter configurations with a minimum number of external components. IO (mA) Max 1500 ((Uncommitted P Power S Switch) it h) Minimum Operating Voltage Range (V) Operating Mode Reference (V) 2.5 to 40 Voltage 1.25 ± 5.2% (Note 1.) Maximum Useful Oscillator Frequency (kHz) Device TA (°C) Package 100 µA78S40 0 to +70 DIP–16 –40 to +85 1.25 ± 2.0% MC34063A 0 to +70 DIP–8 SO–8 MC33063A –40 to +85 DIP–8 SO–8 3400 (Uncommitted Power Switch) 2.5 to 40 3400 (Note 2.) (Dedicated Emitter Power Switch) 7.5 to 40 Voltage 1.25 ± 2.0% and 5.05 ± 3.0% 100 5.05 ± 2.0% 72 ± 12% Internally Fixed 5500 (Note 3.) (Dedicated Emitter Power Switch) 1. Tolerance applies over the specified operating temperature range. 2. Guaranteed minimum, typically 4300 mA. 3. Guaranteed minimum, typically 6500 mA. NOTE: Devices shaded in gray are best fit for Wireless Applications. http://onsemi.com 28 –40 to +125 SO–8 MC34163 0 to +70 MC33163 –40 to +85 DIP–16, SO–16L SO 16L MC34166 0 to +70 MC33166 –40 to +85 MC34167 0 to +70 MC33167 –40 to +85 5–Pin D2PAK, 5–Pin TO–220 WIRELESS 100mA Charge Pump Voltage Converter with Shutdown MC1121 Features The MC1121 is a charge pump converter with 100mA output current capability. It converts a 2.4V to 5.5V input to a corresponding negative output voltage. As with all charge pump converters, the MC1121 uses no inductors saving cost, size, and reducing EMI. An on–board oscillator operates at a typical frequency of 10kHz (at VDD = 5V) when the frequency control input (FC) is connected to ground. The oscillator frequency increases to 200kHz when FC is connected to VDD, allowing the use of smaller capacitors. Operation at sub–10kHz frequencies results in lower quiescent current and is accomplished with the addition of an external capacitor from OSC (pin 7) to ground. The MC1121 can be driven from an external clock connected OSC. Typical supply current at 10kHz is 50µA, and falls to less than 1µA when the shutdown input is brought low, whether the internal or an external clock is used. The MC1121 is available in a Micro8 package. • Converts a 2.4V to 5.5V Input Voltage to a • • • • • • • Corresponding Negative Output Voltage (Inverter Mode) Uses Only 2 Capacitors; No Inductors Required! High Output Current: 100mA Selectable Oscillator Frequency: 10kHz to 200kHz Power–Saving Shutdown Input Optional High–Frequency Operation Allows Use of Small Capacitors Low Operating Current (FC = GND): 50µA Tested Operating Temperature Range: –40°C to +85°C FUNCTIONAL BLOCK DIAGRAM + CAP+ SHDN FC – CAP– C1 OSC CONTROL RC OSCILLATOR OSC Vout SWITCH MATRIX VDD GND MC1121 LOGIC CIRCUITS ORDERING INFORMATION Device MC1121DMR2 Package Shipping Micro8 2500 Tape & Reel http://onsemi.com 29 + C2 WIRELESS RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal MC33170 response via the internal high–performance control amplifier and easily implement system gain. Finally, an LDO delivers a stable voltage, usable for external biasing purposes. • 1V platform compatible: ON voltage = 900mV, OFF voltage = 300mV max • Priority management system prevents power modulation before negative bias establishes • High performance 4.5MHz gain–bandwidth product operational amplifier • Drives N or P–channel MOSFET • 2.5V low–noise LDO • Idle mode input for very low power consumption (standby mode) The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband logic section, providing an immediate gain in part count but also in occupied copper area. The device is also ready for 1V platforms since it accepts logic high control signals down to [email protected]°C. A priority management system ensures the negative is present before authorizing the power modulation, giving the necessary ruggedness to the final design. This function can easily be disabled for PAs not requiring a negative bias. The device is able to directly drive an external P or N–channel with the possibility to linearize the overall Block Diagram NINV Vboost Vbat (5.5 V Max) 9 Shutdown Low Dropout 2.5 V 2.5 V 11 7 6 12 Vbat Shutdown LDO Output Common Enable TX Enable Band Selection 2.5 V 8 + - 14 2 Open–Collector BG Decoder BD 1 B′G 1 mA Continuous 3 4 GSM–900 700 mA Peak 50 mA Continuous DCS–1800 NEGOK? Clip to –5 V 5 13 Negative INV Regulator PA Start–Up ORDERING INFORMATION Device Package Shipping MC33170DTB TSSOP–14 96 Units/Rail MC33170DTBR2 TSSOP–14 2500 Tape & Reel http://onsemi.com 30 10 Out WIRELESS Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Features: MC33263 • Very Low Quiescent Current 170 µA (ON, no load), TA = –40 to +85C, SOT23–L 100 nA (OFF, no load) Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 VRMS (over 100 Hz to 100 kHz, with a 10 nF bypass capacitor), the MC33263 represents the ideal choice for sensitive circuits, especially in portable applications where noise performance and space are premium. The MC33263 also excels in response time and reacts in less than 25 s when receiving an OFF to ON signal (with no bypass capacitor). Thanks to a novel concept, the MC33263 accepts output capacitors without any restrictions regarding their Equivalent Series Resistance (ESR) thus offering an obvious versatility for immediate implementation. With a typical DC ripple rejection better than –90 dB (–70 dB @ 1 kHz), it naturally shields the downstream electronics against choppy power lines. Additionally, thermal shutdown and short–circuit protection provide the final product with a high degree of ruggedness. • Very Low Dropout Voltage, typical value is 137 mV at • • • • • • • • • • an output current of 100 mA Very Low Noise with external bypass capacitor (10 nF), typically 25 µVrms over 100 Hz to 100 kHz Internal Thermal Shutdown Extremely Tight Line Regulation typically –90 dB Ripple Rejection –70 dB @ 1 kHz Line Transient Response: 1 mV for Vin = 3 V Extremely Tight Load Regulation, typically 20 mV at Iout = 150 mA Multiple Output Voltages Available Logic Level ON/OFF Control (TTL–CMOS Compatible) ESR can vary from 0 to 3 Functionally and Pin Compatible with TK112xxA/B Series Applications: • All Portable Systems, Battery Powered Systems, Cellular Telephones, Radio Control Systems, Toys and Low Voltage Systems MC33263 Block Diagram Shutdown Bypass GND 1 3 2 6 Input Thermal Shutdown ON/OFF 4 Band Gap Reference * Current Limit * Antisaturation * Protection 5 ORDERING INFORMATION Device Overvoltage Temperature Range Package TA = –40 40 to +85C SOT23 L SOT23–L MC33263NW–28R2 MC33263NW–30R2 MC33263NW–32R2 MC33263NW–33R2 MC33263NW–38R2 MC33263NW–40R2 MC33263NW–47R2 MC33263NW–50R2 http://onsemi.com 31 Output GND WIRELESS Charge Controller Battery Fast Charge Controllers • Negative Slope Voltage Detection with 4.0 mV MC33340P, D, MC33342P, D TA = –25 to +85C, SO–8, DIP–8 Package • • • • • • The MC33340 and MC33342 are monolithic control IC’s that are specifically designed as fast charge controllers for Nickel Cadmium (NiCd) and Nickel Metal Hydride (NiMH) batteries. These devices feature negative slope voltage detection as the primary means for fast charge termination. Accurate detection is ensured by an output that momentarily interrupts the charge current for precise voltage sampling. An additional secondary backup termination method can be selected that consists of either a programmable time or temperature limit. Protective features include battery over and undervoltage detection, latched over temperature detection, and power supply input undervoltage lockout with hysteresis. Fast charge holdoff time is the only difference between the MC33340 and the MC33342. The MC33340 has a typical holdoff time of 177 seconds and the MC33342 has a typical holdoff time of 708 seconds. • • • Sensitivity Accurate Zero Current Battery Voltage Sensing High Noise Immunity with Synchronous VFC/Logic Programmable 1 to 4 Hour Fast Charge Time Limit Programmable Over/Under Temperature Detection Battery Over and Undervoltage Fast Charge Protection Power Supply Input Undervoltage Lockout with Hysteresis Operating Voltage Range of 3.0 V to 18 V 177 seconds Fast Change Hold–off Time (MC33340) 708 seconds Fast Change Hold–off Time (MC33342) DC Input Regulator Simplified Block Diagram VCC Undervoltage Lockout Internal Bias Vsen 1 Voltage to Frequency Converter Ck High F/V R Over Battery Detect Low Vsen Gate 2 Under Over Temp Latch R S VCC Battery Pack Temp Detect t1/Tref High t1 -∆V Detect Counter Timer t2 Vsen Gate F/T Gnd 7 t2/Tsen 6 t3/Tref Low t3 3 Fast/ Trickle Q 8 t/T 5 Time/ Temp Select VCC 4 This device contains 2,512 active transistors. http://onsemi.com 32 WIRELESS Charge Controller Power Supply Battery Charger Regulation Control Circuit • Differential Amplifier for High–Side Source and Load MC33341P, D Current Sensing TA = –25 to +85C, SO–8, DIP–8 Package • Inverting Amplifier for Source Return Low–Side The MC33341 is a monolithic regulation control circuit that is specifically designed to close the voltage and current feedback loops in power supply and battery charger applications. This device features the unique ability to perform source high–side, load high–side, source low–side and load low–side current sensing, each with either an internally fixed or externally adjustable threshold. The various current sensing modes are accomplished by a means of selectively using the internal differential amplifier, inverting amplifier, or a direct input path. Positive voltage sensing is performed by an internal voltage amplifier. The voltage amplifier threshold is internally fixed and can be externally adjusted in all low–side current sensing applications. An active high drive output is provided to directly interface with economical optoisolators for isolated output power systems. This device is available in 8–lead dual–in–line and surface mount packages. Current Sensing • Non–Inverting Input Path for Load Low–Side Current • • • • • • Sensing Fixed or Adjustable Current Threshold in All Current Sensing Modes Positive Voltage Sensing in All Current Sensing Modes Fixed Voltage Threshold in All Current Sensing Modes Adjustable Voltage Threshold in All Low–Side Current Sensing Modes Output Driver Directly Interfaces with Economical Optoisolators Operating Voltage Range of 2.3 V to 16 V Block Diagram Current Sense Input B/ Voltage Threshold Adjust VCC 7 Drive Output 8 VCC 1.2 V + Differential Amp Disable Logic 0.4 V + + - VCC Differential Amp R R R + Vsen Vth Isen + Transconductance V Amp + -I VCC Ith R + Inverting Amp 1 Current Threshold Input A Reference VCC R R VCC VCC VCC 1.2 V Voltage Sense Input 5 6 VCC 0.2 V VCC + 0.4 V 1.2 V 0.2 V 2 Current Threshold Adjust 3 Compensation ORDERING INFORMATION Device Overvoltage Temperature Range MC33341D MC33341P Package SO–8 TA = –40 40 to +85C http://onsemi.com 33 Plastic DIP 4 Gnd WIRELESS Lithium Battery Protection ICs Lithium Battery Protection Circuit for One Cell Battery Packs • Internally Trimmed Charge and Discharge Voltage MC33349 TA = –40 to 85C, SOT–23 6 Lead Package • • • • The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of internally trimmed charge and discharge voltage limits, discharge current limit detection, and a low current standby mode when the cell is discharged. This protection circuit requires a minimum number of external components and is targeted for inclusion within the battery pack. • Limits Discharge Current Limit Detection Low Current Standby Mode when Cells are Discharged Dedicated for One Cell Applications Minimum Components for Inclusion within the Battery Pack Available in a Low Profile Surface Mount Package Typical One Cell Smart Battery Pack 5 MC33349 6 4 1 3 2 ORDERING INFORMATION Device Overvoltage Threshold (V) Undervoltage Threshold (V) Current Limit Threshold (V) Marking MC33349N–3R1 4.25 2.5 0.2 A1xx* MC33349N–4R1 4.25 2.5 0.075 A2xx* MC33349N–7R1 4.35 2.5 0.2 A0xx* * ″xx″ denotes the date code marking. Consult factory for information on other threshold values. http://onsemi.com 34 Reel Size Tape width Quantity 7″ 8 mm 3000 WIRELESS High Voltage Switching Regulator • • • • • • • • • MC33363B TJ = –25 to +125C The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.0 A SenseFET power switch, 450 V active off–line startup FET, duty cycle controlled oscillator, current limiting comparator with a programmable threshold and leading edge blanking, latching pulse width modulator for double pulse suppression, high gain error amplifier, and a trimmed internal bandgap reference. Protective features include cycle–by–cycle current limiting, input undervoltage lockout with hysteresis, output overvoltage protection, and thermal shutdown. This device is available in a 16–lead dual–in–line and wide body surface mount packages. On–Chip 700 V, 1.0 A SenseFET Power Switch Rectified 240 Vac Line Source Operation On–Chip 450 V Active Off–Line Startup FET Latching PWM for Double Pulse Suppression Cycle–By–Cycle Current Limiting Input Undervoltage Lockout with Hysteresis Output Overvoltage Protection Comparator Trimmed Internal Bandgap Reference Internal Thermal Shutdown Simplified Application AC Input Startup Input Regulator Output 1 Startup Mirror VCC Reg 8 UVLO 6 OVP RT CT 7 PWM Latch Osc Driver S Q 3 Overvoltage Protection Input 11 16 Power Switch Drain R PWM LEB Ipk Compensation Thermal 9 EA Gnd 10 Voltage Feedback Input 4, 5, 12, 13 This device contains 221 active transistors. ORDERING INFORMATION Device Overvoltage Temperature Range MC33363BDW MC33363BP Package SOP–16L TJ = –25 to +125C http://onsemi.com 35 DIP–16 DC Output WIRELESS Critical Conduction GreenLine SMPS Controller MC33364D, D1, D2 The MC33364D1 has an internal 126 kHz frequency clamp. The MC33364D2 is available without an internal frequency clamp. The MC33364D has an internal 126 kHz frequency clamp which is pinned out, so that the designer can adjust the clamp frequency by connecting appropriate values of resistance. • Lossless Off–Line Startup • Leading Edge Blanking for Noise Immunity • Watchdog Timer to Initiate Switching • Operating Temperature Range –25° to +125°C • Shutdown Capability • Over Temperature Protection • Optional/Adjustable Frequency Clamp to Limit EMI TJ = –25 to +125C, SO–8, SO–16 The MC33364 series are variable frequency SMPS controllers that operate in the critical conduction mode. They are optimized for high density power supplies requiring minimum board area, reduced component count, and low power dissipation. Integration of the high voltage startup saves approximately 0.7 W of power compared to the value of the resistor bootstrapped circuits. Each MC33364 features an on–board reference, UVLO function, a watchdog timer to initiate output switching, a zero current detector to ensure critical conduction operation, a current sensing comparator, leading edge blanking, a CMOS driver and cycle–by–cycle current limiting. Block Diagram Line Restart Delay PWM Comparator S + R FB Current Sense ZC Det Leading Edge Blanking Zero Current Detector VCC VCC UVLO Q Vref UVLO R Bandgap Reference Gnd Watchdog Timer Gate Thermal Shutdown Frequency Clamp ORDERING INFORMATION Device MC33364D1 MC33364D1R2 MC33364D2 MC33364D2R2 MC33364D MC33364DR2 Vref Package Shipping SO–8 98 Units/Rail SO–8 Tape & Reel 2500 Tape & Reel SO–8 98 Units/Rail SO–8 Tape & Reel 2500 Tape & Reel SO–8 48 Units/Rail SO–8 Tape & Reel 2500 Tape & Reel http://onsemi.com 36 Optional Frequency Clamp WIRELESS Fixed Frequency PWM Micropower DC-to-DC Converter MC33466H Due to the low bias current specifications, these devices are ideally suited for battery powered computer, consumer, and industrial equipment where an extension of useful battery life is desirable. TA = –30 to +80C, SOT–89 The MC33466 series are micropower switching voltage regulators, specifically designed for handheld and laptop applications, to provide regulated output voltages using a minimum of external parts. A wide choice of output voltages are available. These devices feature a very low quiescent bias current of 15 µA typical. The MC33466H–XXJT1 series features a highly accurate voltage reference, an oscillator, a pulse width modulation (PWM) controller, a driver transistor (Lx), an error amplifier and feedback resistive divider. The MC33466H–XXLT1 is identical to the MC33466H–XXJT1, except that a drive pin (EXT) for an external transistor is provided. Features: • • • • • Low Quiescent Bias Current of 15 µA High Output Voltage Accuracy of ±2.5% Low Startup Voltage of 0.9 V at 1.0 mA Soft–Start = 500 µs Surface Mount Package Representative Block Diagrams MC33466H–XXJT1 D VO L 3 Cin Lx 2 VLx Limiter Output (Voltage Feedback) Drive CO PWM Controller 50 kHz Oscillator Phase Comp Soft-Start Vref 1 Gnd L MC33466H–XXLT1 Vin D VO Cin 2 Rb Q 3 EXT Cb Output (Voltage Feedback) Drive PWM Controller 100 kHz Oscillator Phase Comp Soft-Start Vref 1 Gnd XX Denotes Output Voltage This device contains 100 active transistors. ORDERING INFORMATION Device Output Voltage Operating Temperature Range Type MC33466H–30JT1 MC33466H–33JT1 MC33466H–50JT1 3.0 3.3 5.0 Int. S Switch c MC33466H–30LT1 MC33466H–33LT1 MC33466H–50LT1 3.0 3.3 5.0 Ext. Switch Di Drive Package (Tape/Reel) SO 89 SOT–89 ((Tape)) TA = –30° 30° to +80°C 80°C SO 89 SOT–89 ((Tape)) Other voltages from 2.5 V to 7.5 V, in 0.1 V increments are available. Consult factory for information. http://onsemi.com 37 CO WIRELESS One Volt SmartMOS Rail-to-Rail Operational Amplifier • High Voltage Gain: 100 dB Typical @ 1.0 V • No Phase Reversal on the Output for Over–Driven MC33501/503 The MC33501/503 operational amplifier provides rail–to–rail operation on both the input and output. The output can swing within 50 mV of each rail. This rail–to–rail operation enables the user to make full use of the entire supply voltage range available. It is designed to work at very low supply voltages (1.0 V and ground), yet can operate with a supply of up to 7.0 V and ground. Output current boosting techniques provide high output current capability while keeping the drain current of the amplifier to a minimum. • Low Voltage, Single Supply Operation (1.0 V and Ground to 7.0 V and Ground) • High Input Impedance: Typically 40 fA Input Current • Typical Unity Gain Bandwidth @ 5.0 V = 5.0 MHz, @ 1.0 V = 4.0 MHz • High Output Current (ISC = 50 mA @ 5.0 V, 10 mA @ 1.0 V) • Output Voltage Swings within 50 mV of Both Rails @ 1.0 V • Input Voltage Range Includes Both Supply Rails Input Signals • Input Offset Trimmed to 0.5 mV Typical • Low Supply Current (ID = 1.2 mA/per Amplifier, Typical) • 600 Ω Drive Capability • Extended Operating Temperature Range (–40 to 105°C) APPLICATIONS • • • • • • • • • Single Cell NiCd/Ni MH Powered Systems Interface to DSP Portable Communication Devices Low Voltage Active Filters Telephone Circuits Instrumentation Amplifiers Audio Applications Power Supply Monitor and Control Compatible with VCX Logic Representative Block Diagram VCC IN- IN+ Offset Voltage Trim VCC VCC Output Voltage Saturation Detector Body Bias http://onsemi.com 38 VCC Clamp Out WIRELESS MC33501/503 (continued) MC33501 5 Output 1 VCC 2 Non-Inverting Input 3 + - VEE 4 Inverting Input (Top View) MC33503 5 Output 1 VEE 2 Non-Inverting Input 3 + - VCC 4 Inverting Input (Top View) ORDERING INFORMATION Device Package Shipping MC33501SNT1 TSOP–5 3000 Tape & Reel MC33503SNT1 TSOP–5 3000 Tape & Reel http://onsemi.com 39 WIRELESS Power Management and Interface IC for Smartcard Readers and Couplers • Power Management for Very Low Quiescent Current in MC33560 TA = –25 to +85C, SO–24WB, TSSOP–24 • The MC33560 is an interface IC for smartcard reader/writer applications. It enables the management of any type of smart or memory card through a simple and flexible microcontroller interface. Moreover, several couplers can be coupled in parallel, thanks to the chip select input pin (pin #5). The MC33560 is particularly suited to low power and portable applications because of its power saving features and the minimum of external parts required. Battery life is extended by the wide operating range and the low quiescent current in stand by mode. A highly sophisticated protection system guarantees timely and controlled shutdown upon error conditions. • 100% Compatible with ISO 7816–3 Standard • Wide Battery Supply Voltage Range: 1.8V < VBAT < 6.6V • Programmable VCC Supply for 3V or 5V Card Operation • • • • • • • • Stand By Mode (30µA max) Microprocessor Wake–up Signal Generated Upon Card Insertion Self Contained DC/DC Converter to Generate VCC using a Minimum of Passive Components Controlled Power Up/Down Sequence for High Signal Integrity on the Card I/O and Signal Lines Programmable Card Clock Generator Chip Select Capability for Parallel Coupler Operation High ESD Protection on Card Pins (4kV, Human Body Model) Fault Monitoring VBATlow, VCClow and ICClim All Card Outputs Current Limited and Short Circuit Protected Tested Operating Temperature Range: –25°C to +85°C Simplified Functional Block Diagram VBAT L1 ILIM PGND DC/DC CONVERTER PWRON INT RDYMOD CS POWER MANAGER AND PROGRAMMING SYNCLK ASYCLKIN INVOUT CLOCK GENERATOR IO RESET C4 C8 CARD DETECTOR DELAY VBAT CRDVCC CRDIO CRDRST CRDC4 CRDC8 CRDCLK CRDGND LEVEL TRANSLATOR ORDERING INFORMATION Device CRDDET CRDCON Package Shipping MC33560DW SO–24WB 30 Units/Rail MC33560DWR2 SO–24WB 1000 Tape & Reel MC33560DTB TSSOP–24 62 Units/Rail MC33560DTBR2 TSSOP–24 2500 Tape & Reel http://onsemi.com 40 WIRELESS Ultra Low-Noise Low Dropout Voltage Regulator with 1V ON/OFF Control Features: MC33761 • Ultra low–noise: 150nV/√Hz @ 100Hz, 40µVRMS TA = –40 to +85C, TSOP–5 100Hz – 100kHz typical, Iout = 60mA, Co=1µF The MC33761 is an Low DropOut (LDO) regulator featuring excellent noise performances. Thanks to its innovative concept, the circuit reaches an incredible 40µVRMS noise level without an external bypass capacitor. Housed in a small SOT–23 5 leads–like package, it represents the ideal designer’s choice when space and noise are at premium. The absence of external bandgap capacitor unleashes the response time to a wake–up signal and makes it stay within 40µs (in repetitive mode), pushing the MC33761 as a natural candidate in portable applications. The MC33761 also hosts a novel architecture which prevents excessive undershoots when the regulator is the seat of fast transient bursts, as in any bursting systems. Finally, with a static line regulation better than –75dB, it naturally shields the downstream electronics against choppy lines. • Fast response time from OFF to ON: 40µs typical at a • • • • • • • 200Hz repetition rate Ready for 1V platforms: ON with a 900mVhigh level Nominal output current of 80mA with a 100mA peak capability Typical dropout of 90mV @ 30mA, 160mV @ 80mA Ripple rejection: 70dB @ 1kHz 1.5% output precision @ 25°C Thermal shutdown Vout available from 2.5V to 5.0V Applications: • Noise sensitive circuits: VCOs RF stages etc. • Bursting systems (TDMA phones) • All battery operated devices Simplified Block Diagram ON/ OFF 3 NC 4 GND 2 On/Off 1 Vin 5 Vout Thermal Shutdown Band Gap Reference *Current Limit *Antisaturation Protection *Load Transient Improvement ORDERING INFORMATION Device Voltage Output Package Shipping MC33761SNT1–25 2.5V TSOP–5 3000 Tape & Reel MC33761SNT1–28 2.8V TSOP–5 3000 Tape & Reel MC33761SNT1–30 3.0V TSOP–5 3000 Tape & Reel http://onsemi.com 41 WIRELESS Dual Ultra Low-Noise Low Dropout Voltage Regulator with 1V ON/OFF Control Features MC33762 • Nominal output current of 80mA with a 100mA peak The MC33762 is a dual Low DropOut (LDO) regulator featuring excellent noise performances. Thanks to its innovative concept, the circuit reaches an incredible 40µVRMS noise level without an external bypass capacitor. Housed in a small µ8 package, it represents the ideal designer’s choice when space and noise are at premium. The absence of external bandgap capacitor unleashes the response time to a wake–up signal and makes it stay within 40µs, pushing the MC33762 as a natural candidate in portable applications. The MC33762 also hosts a novel architecture which prevents excessive undershoots when the regulator is the seat of fast transient bursts, as in any bursting systems. Finally, with a static line regulation better than –75dB, it naturally shields the downstream electronics against choppy lines. capability • Ultra low–noise: 150nV/√Hz @ 100Hz, 40µVRMS • • • • • • • 100Hz – 100kHz typical, Iout = 60mA, Co=1µF Fast response time from OFF to ON: 40µs typical Ready for 1V platforms: ON with a 900mVhigh level Typical dropout of 90mV @ 30mA, 160mV @ 80mA Ripple rejection: 70dB @ 1kHz 1.5% output precision @ 25°C Thermal shutdown Vout available from 2.5V to 5.0V Applications • Noise sensitive circuits: VCOs RF stages etc. • Bursting systems (TDMA phones) • All battery operated devices Simplified Block Diagram EN1 2 On/Off 7 VCC1 8 Vout 5 VCC2 6 Vout Thermal Shutdown Band Gap Reference GND1 EN2 1 4 *Current Limit *Antisaturation Protection *Load Transient Improvement On/Off Thermal Shutdown Band Gap Reference GND2 3 *Current Limit *Antisaturation Protection *Load Transient Improvement ORDERING INFORMATION Part Number Voltage Output Package Shipping MC33762DM–2525R2 2.5V & 2.5V Micro8 4000 Tape & Reel MC33762DM–2828R2 2.8V & 2.8V Micro8 4000 Tape & Reel MC33762DM–3030R2 3.0V & 3.0V Micro8 4000 Tape & Reel http://onsemi.com 42 WIRELESS Very Low Dropout/Ultra Low Noise 5 Outputs Voltage Regulator Features: MC33765 • Five Independent Outputs at 2.8V Typical, based upon TA = –40 to +85C, TSSOP–16 voltage version The MC33765 is an ultra low noise, very low dropout voltage regulator with five independent outputs which is available in TSSOP 16 surface mount package. The MC33765 is available in 2.8 V. The output voltage is the same for all five outputs but each output is capable of supplying different currents up to 150 mA for output 4. The device features a very low dropout voltage (0.11 V typical for maximum output current), very low quiescent current (5.0 A maximum in OFF mode, 130 A typical in ON mode) and one of the output (output 3) exhibits a very low noise level which allows the driving of noise sensitive circuitry. Internal current and thermal limiting protections are provided. Additionally, the MC33765 has an independent Enable input pin for each output. It includes also a common Enable pin to shutdown the complete circuit when not used. The Common Enable pin has the highest priority over the five independent Enable input pins. The voltage regulators VR1, VR2 and VR3 have a common input voltage pin VCC1. The other voltage regulators VR4 and VR5 have a common input voltage pin VCC2. • Internal Trimmed Voltage Reference • Vout Tolerance ±3.0% over the Temperature Range –40°C to +85°C • Enable Input Pin (Logic–Controlled Shutdown) for • • • • • • • Each of the Five Outputs Common Enable Pin to Shutdown the Whole Circuit Very Low Dropout Voltage (0.11 V Typical for Output 1, 2, 3 and 5; 0.17 V Typical for Output 4 at Maximum Current) Very Low Quiescent Current (Maximum 5.0 µA in OFF Mode, 130 µA Typical in ON Mode) Ultra Low Noise for VR3 (30 µV RMS Max, 100 Hz < f < 100 kHz) Internal Current and Thermal Limit 100 nF for VR1, VR2, VR4 and VR5 and 1.0 µF for VR3 for Stability Supply Voltage Rejection: 60 dB (Typical) @ f = 1.0 kHz ORDERING INFORMATION Device Package Shipping MC33765DTB TSSOP–16 96 Units/Rail MC33765DTBR2 TSSOP–16 2500 Tape & Reel http://onsemi.com 43 WIRELESS MC33765 (continued) VCC1 (15) CE (2) (10) VCC2 330 nF ON/OFF 1 (3) Common Enable Current Limit Enable VCC1 Voltage Reference BYPASS 100 nF ON/OFF 2 (4) 1.25 V + (14) Temp. Shut. Current Limit Enable VOUT1 100 nF VCC1 + (13) Temp. Shut. VOUT2 100 nF (5) ON/OFF 3 Current Limit Enable VCC1 + (12) Temp. Shut. ON/OFF 4 (6) Current Limit Enable VOUT3 1.0 F VCC2 + (11) Temp. Shut. ON/OFF 5 (7) Current Limit Enable VOUT4 100 nF VCC2 + (9) Temp. Shut. GND (8) http://onsemi.com 44 VOUT5 100 nF WIRELESS Liquid Crystal Display and Backlight Integrated Controller MC34271 Due to the low bias current specifications, this device is ideally suited for battery powered computer, consumer, and industrial equipment where an extension of useful battery life is desirable. The MC34271 is a low power dual switching voltage regulator, specifically designed for handheld and laptop applications, to provide several regulated output voltages using a minimum of external parts. Two uncommitted switching regulators feature a very low standby bias current of 5.0 µA, and an operating current of 7.0 mA capable of supplying output currents in excess of 200 mA. Both devices have three additional features. The first is an ELD Output that can be used to drive a backlight or a liquid crystal display. The ELD output frequency is the clock divided by 256. The second feature allows four additional output bias voltages, in specific proportions to VB, one of the switching regulated output voltages. It allows use of mixed logic circuitry and provides a voltage bias for N–Channel load control MOSFETs. The third feature is an Enable input that allows a logic level signal to turn–“off” or turn–“on” both switching regulators. Features: • Low Standby Bias Current of 5.0 µA • Uncommitted Switching Regulators Allow Both • • • • • Positive and Negative Supply Voltages Logic Enable Allows Microprocessor Control of All Outputs Synchronizable to External Clock Mode Commandable for ELD and LCD Interface Frequency Synchronizable Auxiliary Output Bias Voltages Enable Load Control via N–Channel FETs ORDERING INFORMATION Device Package Shipping MC34271FB QFP–32 250 Units/Tray http://onsemi.com 45 WIRELESS MC34271 (continued) Representative Block Diagram Vin SW1 EL Panel On/Off EL Control EN1 VDD 32 26 D1 Circuit #1 PWM 7 6 ELD Drv1 9 8 Sync 31 ÷2 OSC ELD EN VRef 27 Comp1 µP Control From DAC VB EN2 11 Circuit #2 PWM 2 18 Vin Mode S2 19 3 4 17 VB VB 25 16 V0 V1 22 15 21 VA = 5.0 V VDD D2 Vref 1.25 V Ref2 FB2 23 Comp2 VDD 10 RT 30 Ref1 FB1 S1 28 V2 BIAS BIAS Output Buffers 14 13 Gnd 29 12 This device contains 350 active transistors. http://onsemi.com 46 V3 V4 V0 V1 V2 V3 V4 WIRELESS Low Noise 150 mA Low Drop Out (LDO) Linear Voltage Regulator • High Ripple Rejection: typical 70 dB @ f = 1 kHz. • Low Temperature–Drift Coefficient of Output Voltage: MC78PC00 TA = –40 to +85C, SOT–23 5 Lead Package The MC78PC00 are a series of CMOS linear voltage regulators with high output voltage accuracy, low supply current, low dropout voltage, and high Ripple Rejection. Each of these voltage regulators consists of an internal voltage reference, an error amplifier, resistors, a current limiting circuit and a chip enable circuit. The dynamic Response to line and load is fast, which makes these products ideally suited for use in hand–held communication equipment. The MC78PC00 series are housed in the SOT–23 5 lead package, for maximum board space saving. • • • • • • Applications: • Power source for cellular phones (GSM, CDMA, Features: • Ultra–Low Supply Current: typical 35 A in ON mode • • typical ±100 ppm/°C. Excellent Line Regulation: typical 0.05%/V. High Accuracy Output Voltage: ±2.0%. Fast Dynamic Response to Line and Load. Small Package: SOT–23 5 leads. Built–in Chip Enable circuit (CE input pin). Identical Pinout to the LP2980/1/2. • with no load. Standby Mode: typical 0.1 A. Low Dropout Voltage: typical 0.2 V @ IOUT = 100 mA. • TDMA), Cordless Phones (PHS, DECT) and 2–way radios. Power source for domestic appliances such as cameras, VCRs and camcorders. Power source for battery–powered equipment. Block Diagram VIN MC78PCxx 1 Vref CE 5 CURRENT LIMIT 2 3 ORDERING INFORMATION Device Package Shipping SOT 23 SOT–23 5 Leads 3000 Tape & Reel MC78PC18NTR MC78PC25NTR MC78PC28NTR MC78PC30NTR VOUT MC78PC33NTR MC78PC50NTR Other voltages are available. Consult your ON Semiconductor representative. http://onsemi.com 47 GND WIRELESS Integrated Relay/Inductive Load Driver Applications: MDC3105LT1 • Telecom: Line Cards, Modems, Answering Machines, • Provides a Robust Driver Interface between D.C. Relay FAX Machines, Feature Phone Electronic Hook Switch Coil and Sensitive Logic Circuits • Computer & Office: Photocopiers, Printers, Desktop • Optimized to Switch Relays from a 3 V to 5 V Rail • Capable of Driving Relay Coils Rated up to 2.5 W at Computers • Consumer: TVs & VCRs, Stereo Receivers, CD 5V Players, Cassette Recorders, TV Set Top Boxes • Features Low Input Drive Current & Good • Industrial: Small Appliances, White Goods, Security Back–to–Front Transient Isolation Systems, Automated Test Equipment, Garage Door Openers • Internal Zener Eliminates Need for Free–Wheeling • Automotive: 5.0 V Driven Relays, Motor Controls, Diode • Internal Zener Clamp Routes Induced Current to Power Latches, Lamp Drivers Ground for Quieter System Operation • Guaranteed Off State with No Input Connection • Supports Large Systems with Minimal Off–State This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT–23 package. It can be used to switch 3 to 6 Vdc inductive loads such as relays, solenoids, incandescent lamps, and small DC motors without the need of a free–wheeling diode. Leakage • ESD Resistant in Accordance with the 2000 V Human Body Model • Low Sat Voltage Reduces System Current Drain by Allowing Use of Higher Resistance Relay Coils INTERNAL CIRCUIT DIAGRAM Vout (3) Vin 1.0 k (1) 6.6 V 33 k GND (2) http://onsemi.com 48 WIRELESS Low Voltage Bias Stabilizer with Enable MDC5001T1 voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. The “ENABLE” polarity nulls internal current, Enable current, and RF transistor current in “STANDBY.” This device is intended to replace a circuit of three to six discrete components. The combination of low supply voltage, low quiescent current drain, and small package make the MDC5001T1 ideal for portable communications applications such as: –40 to +85C, SOT–363 • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components • Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc • • • • • • • • Reduces Bias Current Variation Due to Temperature and Unit–to–Unit Parametric Changes • Consumes 0.5 mW at VCC = 2.75 V • Active High Enable is CMOS Compatible This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N–Channel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low Cellular Telephones Pagers PCN/PCS Portables GPS Receivers PCMCIA RF Modems Cordless Phones Broadband and Multiband Transceivers and Other Portable Wireless Products INTERNAL CIRCUIT DIAGRAM VCC (4) R1 Q1 R2 Vref (6) R3 VENBL (5) Q2 R5 Iout (1) R4 Q4 R6 GND (2) and (3) ORDERING INFORMATION Device MDC5001T1 Overvoltage Temperature Range Package –40 to +85C SOT–363 http://onsemi.com 49 WIRELESS Antenna Switch Controller Features MDC5100 • • • • The MDC5100 is designed to control GaAs RF switches which require positive and negative going control voltages to select the switch path. All input control signals are 3 V CMOS–logic compatible to allow for direct interface to a microcontroller. The device also has an accessory detect pin for use in applications where there is a portable handset to mobile adapter. The device is designed to interface directly with Double Pull–Double Throw (DPDT) switches such as the M/A–Com SW 363. This device in combination with a GaAs RF switch can be used to achieve duplex isolation in many Time Division Duplex Radios like DECT or in Frequency Division Duplex Radios employing time division multiple access with staggered Transit/Receive time slots such as GSM. It can also be used to control an RF switch in dual band radio applications. The device is housed in a miniature Micro8 for minimum space utilization. Micro–miniature Low Profile Micro8 Package 3 V CMOS Logic Control Inputs Ultra–low Quiescent Current of 400 A Typical Wide Operating Temperature Range of –40 to 85°C Applications • • • • • GSM and PCS Portable Phones Mobile to Portable Accessories Wireless LAN Modems Specialized TDD and TDMA Radios Dual Band Phones Functional Block Diagram Acc VCC V2out GND State Logic & Switches V1out VGen VEE RxE Control and V+ Generation TxE ORDERING INFORMATION Device MDC5100R2 Overvoltage Temperature Range Package –40 to +85C Micro8 http://onsemi.com 50 WIRELESS Antenna Switch Control MDC5101 Duplex Radio like GSM and DCS1800 with staggered Transmit Receive Time Slots. It can also be used to control an RF switch in dual band radio applications. This integrated solution in a Micro8 package compared with a discrete solution will add a great value in performance with less board space consumption. –40 to +85C, Micro8 The MDC5101 inputs TxE and RxE Logic Signals with an accessory input termination option and, allows positive and negative control voltages in accordance with the enclosed truth table. This device is primarily intended to control GaAs RF switches. It is also designed to interface with most HCMOS MCUs such as the Motorola MC68338. The MDC5101 is intended to replace a circuit of up to 18 discrete components and is available in a Micro8 package. This device, in combination with a compatible RF switch, can be used to achieve duplex isolation in any Time Division Features: • Miniature Micro8 Surface Mount Package Saves Board Space • Logic Level Control • Designed to Interface with Microcontrollers Block Diagram 1 2 3 RX-2.75 GND ACC V1 VEE RX-EN 8 7 6 log1 log2 4 TX-EN V2 ORDERING INFORMATION Device MDC5101 Overvoltage Temperature Range Package –40 to +85C Micro8 http://onsemi.com 51 5 WIRELESS Product Preview Compact Smart Card Interface IC • Full Control of the Power Up/Down Sequence Yields NCN6000 The NCN6000 is an integrated circuit dedicated to the smart card interface applications. The device handles any type of smart card through a simple and flexible microcontroller interface. On top of that, thanks to the built–in chip select pin, several couplers can be connected in parallel. The device is particularly suited for low cost, low power applications, with high extended battery life coming from extremely low quiescent current. • • • • Features • 100% Compatible with ISO 7816–3 and EMV Standard • Wide Battery Supply Voltage Range: 2.7 < Vbat < • 6.0 V • • Programmable VCC Supply to Cope with either 3.0 V VCC PB5 PB4 PB3 PB2 PB1 PB0 2 3 4 5 6 7 8 9 IRQ 10 MCU 20 A0 Vbat A1 Lout_H PGM Lout_L PWR_ON PWR_GND STATUS GROUND CRD_VCC CS RESET 10 µF C1 U? 1 PB6 • E–Commerce Interface • ATM Smart Card • Pay TV System Block Diagram +5 V PB7 Typical Application CRD_IO I/O CRD_CLK INT CRD_RST XTAL CLOCK_IN CRD_DET GND NCN6000 GND 19 L1 18 22 µF 17 16 GND 15 C2 10 µF C3 100 nF 14 13 GND 17 18 12 8 11 4 3 2 1 GND GND 5 7 GND GND Swa Swb C8 C4 CLK RST ISO7816 • or 5.0 V Card Operation Built–in DC/DC Converter Generates the VCC Supply with a Single External Low Cost Inductor only, providing a High Efficiency Power Conversion High Signal Integrity on both the Card I/O and the Signal Lines Programmable Card Clock Generator Built–in Chip Select Logic allows Parallel Coupling Operation ESD Protection on Card Pins (4.0 kV, Human Body Model) Fault Monitoring includes Vbatlow and VCClow, providing Logic Feedback to External CPU Card Detection Programmable to Handle Positive or Negative Going Input Built–in Programmable CRD_CLK Stop Function Handle both High or Low State VCC GND I/O VPP J1 SMARTCARD ORDERING INFORMATION Device NCN6000 Package Shipping TSSOP–20 TBD This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com 52 WIRELESS Product Preview Low Power Level Shifter Features NCN6010 • Supports 3 V or 5 V Operating SIM Card • Built–in Pull Up Resistor for I/O Pin in Both Directions • All Pins are Fully ESD Protected, According to GSM The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM card and an external micro controller. A built–in DC/DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM11.11 specification. The external MPU has an access to a dedicated input STOP pin, providing a way to switch off the power applied to the SIM card in case of failure or when the card is removed. Specification • Supports 5 MHz Clock Typical Application • Cellular Phone SIM Interface Block Diagram VDD C4 4.7 µF C2 VCC MPU or GSM Controller GND 1 2 P5 P4 P3 P2 P1 P0 3 4 5 6 7 VDD SIM_VCC 14 Cta STOP MOD_VCC C3 220 nF PWR_ON I/O CLOCK 100 nF 13 Ctb SIM_IO C1 12 GND 1 µF 11 10 RESET SIM_CLK SIM_RST 9 8 5 GND 4 3 2 1 ORDERING INFORMATION Device NCN6010 Operating Temperature Range Package –25C to +85C TSSOP–14 This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com 53 WIRELESS Product Preview Low Power Level Shifter Features NCN6011 • • • • • The NCN6011 is a level shifter analog circuit designed to translate the voltages between a SIM card and an external micro controller. The device handles all the signals needed to control the data transaction between the external Card and the MPU. 2.7 to 6.0 V Input and/or Output Voltage Range 1 µA Quiescent Supply Current All Pins are Fully ESD Protected Supports 5 MHz Clock Provides a Logic I/O Enable Function Typical Application • SIM/SMARTCARD Interface Block Diagram VSUPPLY VCC C3 POWER MANAGEMENT UNIT VDD 4.7 µF C1 1 F GND C2 VCC MPU or GSM Controller GND 1 2 P3 3 4 P2 5 P1 P0 6 7 NA NA 14 100 nF 13 I/O SIM_IO VDD SIM_VCC CLOCK SIM_CLK RESET SIM_RST IO_ENABLE GND NA GND 12 11 10 9 8 NA IRQ VPP 18 17 Swa C8 C4 CLK RST VCC GND J1 I/O GND Swb 8 4 3 2 1 5 7 GND ISO7816 ORDERING INFORMATION Device NCN6011 Operating Temperature Range Package –25C to +85C TSSOP–14 This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com 54 WIRELESS PWM Current-Mode Controller for Low-Power Universal Off-Line Supplies Features NCP1200 • • • • • • • Housed in SO–8 or DIP8 package, the NCP1200 represents a major leap toward ultra–compact Switch–Mode Power Supplies. Thanks to a novel concept, the circuit allows the implementation of a complete offline battery charger or a standby SMPS with few external components. Furthermore, an integrated output short–circuit protection lets the designer build an extremely low–cost AC/DC wall adapter associated with a simplified feedback scheme. With an internal structure operating at a fixed 40 kHz, 60 kHz or 100 kHz, the controller drives low gate–charge switching devices like an IGBT or a MOSFET thus requiring a very small operating power. Thanks to current–mode control, the NCP1200 drastically simplifies the design of reliable and cheap offline converters with excellent audio– susceptibility and inherent pulse–by–pulse control. When the current setpoint falls below a given value, e.g. the output power demand diminishes, the IC automatically enters the so–called skip cycle mode and provides excellent efficiency at light loads. Because this occurs at low peak current, no acoustic noise takes place. Finally, the IC is self–supplied from the DC rail, eliminating the need of an auxiliary winding. This feature ensures operation in presence of low output voltage or shorts. • • • • No Auxiliary Winding Operation Internal Output Short–Circuit Protection Extremely Low No–Load Standby Power Current–Mode with Skip–Cycle Capability Internal Leading Edge Blanking 110 mA Peak Current Source/Sink Capability Internally Fixed Frequency at 40 kHz, 60 kHz and 100 kHz Direct Optocoupler Connection Built–in Frequency Jittering for Lower EMI SPICE Models Available for TRANsient and AC Analysis Internal Temperature Shutdown Typical Applications • AC/DC Adapters • Offline Battery Chargers • Auxiliary/Ancillary Power Supplies (USB, Appliances, TVs, etc.) Block Diagram C3 10 F 400 V 6.5 V @ 600 mA + 1 Adj 2 FB + D2 1N5819 HV 8 NC 7 3 CS VCC 6 4 Gnd Drv 5 M1 MTD1N60E C2 470 F/10 V Rf 470 EMI Filter + C5 10 F Rsense Universal Input D8 5 V1 ORDERING INFORMATION Device NCP1200P40 NCP1200D40 NCP1200P60 NCP1200D60 NCP1200D100 NCP1200P100 Type Package Shipping FSW = 40 kHz FSW = 40 kHz PDIP8 50 Units/Rail SO–8 2500 Tape & Reel FSW = 60 kHz FSW = 60 kHz PDIP8 50 Units/Rail SO–8 2500 Tape & Reel FSW = 100 kHz FSW = 100 kHz PDIP8 50 Units/Rail SO–8 2500 Tape & Reel http://onsemi.com 55 WIRELESS Product Preview Fixed Frequency PWM Micropower DC-DC Converter NCP1400A • Output Voltage from 1.8 V to 6.0 V (0.1 V stepwise) The NCP1400 is a monolithic micropower high frequency switching voltage regulator, specially designed for single battery handheld and laptop applications with value–added feature of Chip Enable to reduce Off–State current. The device is designed to operate for voltage regulation with minimum and low profile external components. This device is available in TSOP–5 package. • • • • • Features Typical Application • • • • • • • • • High Efficiency 82% at IO = 4 mA Low Quiescent Bias Current of 35 µA (typical) Low Start–up Voltage of 0.9 V typical at 1.0 mA Holding Voltage (minimum input) of 7.0 V with High Accuracy ±2.5% Low Converter Ripple with Typical 25 mV Fixed Frequency PWM at 80 kHz Chip Enable Low Profile and Minimum External Parts Micro Miniature TSOP–5 Package Pagers Personal Digital Assistants (PDA) Cellular Camcorders and Digital Still Cameras Hand–held Instrument Block Diagram OUT 2 LX 5 VLX LIMITER + ERROR AMP DRIVER POWER SWITCH NC 3 PHASE COMPENSATION PWM CONTROLLER SOFT–START 180 kHz OSCILLATOR VOLTAGE REFERENCE GND 4 1 CE ORDERING INFORMATION Device Package Shipping NCP1400SN–XXYT1 TSOP–5 3000 Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com 56 WIRELESS Voltage Detector Series Features: NCP300, NCP301 • • • • • The NCP300 and NCP301 series are second generation ultra–low current voltage detectors. These devices are specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is paramount. Each series features a highly accurate under voltage detector with hysteresis which prevents erratic system reset operation as the comparator threshold is crossed. The NCP300 series consists of complementary output devices that are available with either an active high or active low reset output. The NCP301 series has an open drain N–channel output with either an active high or active low reset output. The NCP300 and NCP301 device series are available in the TSOP–5 package with seven standard under voltage thresholds. Additional thresholds that range from 0.9 V to 4.9 V in 100 mV steps can be manufactured. Quiescent Current of 0.5 µA Typical High Accuracy Under Voltage Threshold of 2.0% Wide Operating Voltage Range of 0.8 V to 10 V Complementary or Open Drain Reset Output Active Low or Active High Reset Output Applications: • • • • Microprocessor Reset Controller Low Battery Detection Power Fail Indicator Battery Backup Detection Representative Block Diagrams NCP301xSNxxT1 Open Drain Output Configuration NCP300xSNxxT1 Complementary Output Configuration Input 2 Input * Vref 1 3 2 1 Reset Output * Reset Output Vref Gnd * The representative block diagrams depict active low reset output ‘L’ suffix devices. The comparator inputs are interchanged for the active high output ‘H’ suffix devices. This device contains 25 active transistors. http://onsemi.com 57 3 Gnd WIRELESS NCP300, NCP301 (continued) ORDERING INFORMATION Device Threshold Voltage NCP300LSN09T1 NCP300LSN18T1 NCP300LSN20T1 NCP300LSN27T1 NCP300LSN30T1 NCP300LSN45T1 NCP300LSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP300HSN09T1 NCP300HSN18T1 NCP300HSN20T1 NCP300HSN27T1 NCP300HSN30T1 NCP300HSN45T1 NCP300HSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP301LSN09T1 NCP301LSN18T1 NCP301LSN20T1 NCP301LSN27T1 NCP301LSN30T1 NCP301LSN45T1 NCP301LSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP301HSN09T1 NCP301HSN18T1 NCP301HSN20T1 NCP301HSN27T1 NCP301HSN30T1 NCP301HSN45T1 NCP301HSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 Output Type Reset Marking Active Low SEJ SFK SEH SEE SEC SEA SDZ Active High SDY SFJ SFI SDU SDS SDQ SDP Active Low SFF SFN SFD SFA SEY SEV SEU Active High SET SFM SFL SEP SEN SEL SEK CMOS O en Open Drain Package (Qty/Reel) 3000 Units on 7 7″ Reel NOTE: The ordering information lists seven standard under voltage thresholds with active low outputs. Additional active low threshold devices, ranging from 0.9 V to 4.9 V in 100 mV increments and NCP300/NCP301 active high output devices, ranging from 0.9 V to 4.9 V in 100 V increments can be manufactured. Contact your ON Semiconductor representative for availability. The electrical characteristics of these additional devices are shown in Tables 1 and 2. http://onsemi.com 58 WIRELESS Voltage Detector Series with Programmable Delay Features: NCP302, NCP303 • • • • • • The NCP302 and NCP303 series are second generation ultra–low current voltage detectors that contain a programmable time delay generator. These devices are specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is paramount. Each series features a highly accurate under voltage detector with hysteresis and an externally programmable time delay generator. This combination of features prevents erratic system reset operation. The NCP302 series consists of complementary output devices that are available with either an active high or active low reset. The NCP303 series has an open drain N–channel output with an active low reset output. The NCP302 and NCP303 device series are available in the TSOP–5 package with seven standard under voltage thresholds. Additional thresholds that range from 0.9 V to 4.9 V in 100 mV steps can be manufactured. Quiescent Current of 0.5 µA Typical High Accuracy Under Voltage Threshold of 2.0% Externally Programmable Time Delay Generator Wide Operating Voltage Range of 0.8 V to 10 V Complementary or Open Drain Output Active Low or Active High Reset Applications: • • • • Microprocessor Reset Controller Low Battery Detection Power Fail Indicator Battery Backup Detection Representative Block Diagrams NCP303LSNxxT1 Open Drain Output Configuration NCP302xSNxxT1 Complementary Output Configuration 2 2 Input RD * Gnd 5 RD 1 Vref 3 1 Input Reset Output Vref 3 CD * Inverter for active low devices. * Buffer for active high devices. This device contains 28 active transistors. http://onsemi.com 59 Gnd 5 CD Reset Output WIRELESS NCP302, NCP303 (continued) ORDERING INFORMATION Device Threshold Voltage NCP302LSN09T1 NCP302LSN18T1 NCP302LSN20T1 NCP302LSN27T1 NCP302LSN30T1 NCP302LSN45T1 NCP302LSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP302HSN09T1 NCP302HSN18T1 NCP302HSN20T1 NCP302HSN27T1 NCP302HSN30T1 NCP302HSN45T1 NCP302HSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP303LSN09T1 NCP303LSN18T1 NCP303LSN20T1 NCP303LSN27T1 NCP303LSN30T1 NCP303LSN45T1 NCP303LSN47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 Output Type Reset Marking Active Low SBOYW SBFYW SBDYW SAWYW SATYW SALYW SACYW Active High SDOYW SFHYW SFGYW SDKYW SDIYW SDGYW SDFYW Active Low SDEYW SCVYW SCTYW SCMYW SCJYW SBTYW SBRYW CMOS Open Drain Package (Qty/Reel) 3000 Units on 7″ Reel NOTE: The ordering information lists seven standard under voltage thresholds with active low outputs. Additional active low threshold devices, ranging from 0.9 V to 4.9 V in 100 mV increments and NCP302 active high output devices, ranging from 0.9 V to 4.9 V in 100 V increments can be manufactured. Contact your ON Semiconductor representative for availability. The electrical characteristics of these additional devices are shown in Tables 1 and 2. http://onsemi.com 60 WIRELESS Voltage Detector Series Features: NCP304, NCP305 • • • • • The NCP304 and NCP305 series are second generation ultra–low current voltage detectors. These devices are specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is paramount. Each series features a highly accurate under voltage detector with hysteresis which prevents erratic system reset operation as the comparator threshold is crossed. The NCP304 series consists of complementary output devices that are available with either an active high or active low reset output. The NCP305 series has an open drain N–channel output with an active low reset output. The NCP304 and NCP305 device series are available in the SC–82AB package with seven standard under voltage thresholds. Additional thresholds that range from 0.9 V to 4.9 V in 100 mV steps can be manufactured. Quiescent Current of 1 µA Typical High Accuracy Under Voltage Threshold of 2.0% Wide Operating Voltage Range of 0.8 V to 10 V Complementary or Open Drain Reset Output Active Low or Active High Reset Output Applications: • • • • Microprocessor Reset Controller Low Battery Detection Power Fail Indicator Battery Backup Detection Representative Block Diagrams NCP305LSQxxT1 Open Drain Output Configuration NCP304xSQxxT1 Complementary Output Configuration Input 2 Input * Vref 1 4 2 1 Reset Output Reset Output Vref Gnd This device contains 38 active transistors. 4 Gnd This device contains 37 active transistors. * The representative block diagram depicts active low reset output ‘L’ suffix devices. The comparator input is interchanged for the active high output ‘H’ suffix devices. http://onsemi.com 61 WIRELESS NCP304, NCP305 (continued) ORDERING INFORMATION Device Threshold Voltage NCP304LSQ09T1 NCP304LSQ18T1 NCP304LSQ20T1 NCP304LSQ27T1 NCP304LSQ30T1 NCP304LSQ45T1 NCP304LSQ47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP304HSQ09T1 NCP304HSQ18T1 NCP304HSQ20T1 NCP304HSQ27T1 NCP304HSQ30T1 NCP304HSQ45T1 NCP304HSQ47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 NCP305LSQ09T1 NCP305LSQ18T1 NCP305LSQ20T1 NCP305LSQ27T1 NCP305LSQ30T1 NCP305LSQ45T1 NCP305LSQ47T1 0.9 1.8 2.0 2.7 3.0 4.5 4.7 Output Type Reset Marking Active Low SFO SFY SGA SGI SGL SHC SHE Active High SNQ SNZ SOB SOI SOL SPA SPC Active Low SHH SHR SHT SIB SIE SIV SIX CMOS Open Drain Package (Qty/Reel) 3000 Units on 7″ Reel NOTE: The ordering information lists seven standard under voltage thresholds with active low outputs. Additional active low threshold devices, ranging from 0.9 V to 4.9 V in 100 mV increments and NCP304 active high output devices, ranging from 0.9 V to 4.9 V in 100 V increments can be manufactured. Contact your ON Semiconductor representative for availability. The electrical characteristics of these additional devices are shown in Tables 1 and 2. http://onsemi.com 62 WIRELESS Over Voltage Protection IC Features: NCP345 • • • • The NCP345 over–voltage protection circuit (OVP) protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and quickly disconnect the input voltage supply from the load before any damage can occur. The OVP consists of a precise voltage reference, a comparator with hysteresis, control logic, and a MOSFET gate driver. The OVP is designed on a robust BiCMOS process and is intended to withstand voltage transients up to 30 V. The device is optimized for applications that have an external AC/DC adapter or car accessory charger to power the product and/or recharge the internal batteries. The nominal over–voltage threshold is 6.85 V so it is suitable for single cell Li–Ion applications as well as 3/4 cell NiCD/NiMH applications. Over–Voltage Turn–Off Time of less than 1 µsec Accurate Voltage Threshold of 6.85 V (nominal) Under–Voltage Lockout Protection CNTRL Input Compatible with 1.8 V Logic Levels Applications: • • • • Cellular Phones Digital Cameras Portable Computers and PDAs Portable CD and other Consumer Electronics Simplified Application Diagram P–CH AC/DC Adapter or Accessory Charger Schottky Diode VCC IN Under–voltage Lock Out + - + FET Driver Logic C1 LOAD OUT Vref NCP345 GND CNTRL Microprocessor port Note: This device contains 89 active transistors ORDERING INFORMATION Device NCP345SNT1 Package Shipping TSOP–5 3000/7″ Reel http://onsemi.com 63 WIRELESS Product Preview Dual Operational Amplifier and Voltage Reference • Large Output Voltage Swing: 0 V to (VCC – 1.5 V) • Input Common Mode Voltage Range Includes Ground • Wide Power Supply Range: 3 to 35 V NCP4300A The NCP4300A is a monolithic IC that includes on e independent op–amp and another op–amp for which the non–inverting input is connected to a 2.60 V fixed voltage reference. This device offers both cost and space saving for many applications such as switch mode power supply and battery charger. Voltage Reference • Fixed Output Voltage Reference 2.60 V • 1.0% Voltage Precision over Temperature • Sink Current Capability: Up to 80 mA Features Operational Amplifier Typical Application • Switch Mode Power Supply • Battery Charger • Low Input Offset Voltage: 0.5 mV typ. • Low Supply Current: 350 µA/op–amp (@ VCC = 5 V) • Medium Bandwidth (unity gain): 0.7 MHz Block Diagram VO R1 OP1 – Voltage Sensing OP2 – Current Sensing OP1 OP2 - + + - Ra Rb R2 RTN CURRENT SENSE The above circuit shows the NCP4300A used in a single output isolated flyback supply. Output Voltage V O will be maintained constant (determined by R1, R2 ration) until current passing through the Current Sensing resistor exceed a threshold set by Ra and Rb. ORDERING INFORMATION Device NCP4300A Package Shipping 8–Pin SOIC TBD This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com 64 WIRELESS 150 mA CMOS Low Noise Low-Dropout Voltage Regulator Features NCP500 • • • • • • • The NCP500 series of fixed output low dropout linear regulators are designed for portable battery powered applications which require low noise operation, fast enable response time, and low dropout. The device achieves its low noise performance without the need of an external noise bypass capacitor. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, and resistors for setting output voltage, and current limit and temperature limit protection circuits. The NCP500 has been designed to be used with low cost ceramic capacitors and requires a minimum output capacitor of 1.0 µF. The device is housed in the micro–miniature TSOP–5 surface mount package. Standard voltage versions are 1.8, 2.5, 2.7, 2.8, 3.0, 3.3, and 5.0 V. Ultra–Low Dropout Voltage of 270 mV at 150 mA Excellent Line and Load Regulation Wide Operating Voltage Range of 1.8 V to 6.0 V High Accuracy Output Voltage of 2.5% Fast Enable Turn–On Time of 20 µsec Enable Can Be Driven Directly by 1.0 V Logic Industrial Temperature Range of –40°C to 85°C Typical Applications • • • • Noise Sensitive Circuits – VCO’s, RF Stages, etc. SMPS Post–Regulation Hand–Held Instrumentation Camcorders and Cameras Simplified Block Diagram Vin Vout 1 5 Thermal Shutdown Driver w/ Current Limit Enable ON 3 OFF 2 Gnd xx Denotes Output Voltage ORDERING INFORMATION Device NCP500SN18T1 NCP500SN25T1 NCP500SN27T1 NCP500SN28T1 NCP500SN30T1 NCP500SN33T1 NCP500SN50T1 Nominal Output Voltage Marking Package Shipping 1.8 2.5 2.7 2.8 3.0 3.3 5.0 LCS LCT LCU LCV LCW LCX LCY TSOP–5 TSOP 5 3000 7″ 7 Tape Ta e & Reel For availability of other output voltages, please contact your local ON Semiconductor Sales Representative. http://onsemi.com 65 WIRELESS Lithium Battery Protection Circuit for One Cell Battery Packs • Internally Trimmed Precision Charge and Discharge NCP800 The NCP800 resides in a lithium battery pack where the battery cell continuously powers it. In order to maintain cell operation within specified limits, this protection circuit senses cell voltage, charge current, and discharge current, and correspondingly controls the state of two, N–channel, MOSFET switches. These switches reside in series with the negative terminal of the cell and the negative terminal of the battery pack. During a fault condition, the NCP800 open circuits the pack by turning off one of these MOSFET switches, which disconnects the current path. • • • • • Voltage Limits Overvoltage Threshold Accuracy of ± 50 mV Discharge Current Limit Detection Automatic Reset from Discharge Current Faults Low Current Standby State when Cells are Discharged Available in a Low Profile Surface Mount Package Typical One Cell Smart Battery Pack 5 NCP800 6 4 1 3 2 ORDERING INFORMATION Device Overvoltage Threshold (V) Undervoltage Threshold (V) Current Limit Threshold (V) Marking Reel Size Tape width Quantity NCP800SN1T1 4.35 2.5 0.2 BAEyw* 7″ 8 mm 3000 *yw denotes the date code marking. Consult factory for information on other threshold values. http://onsemi.com 66 WIRELESS Double–Ended Controllers These double–ended voltage, current and resonant mode controllers are designed for use in push–pull, half–bridge, and full–bridge converters. They are cost effective in applications that range from 100 to 2000 watts power output. IO (mA) Max 500 (U (Uncommitted i d Drive Out Outputs) uts) Minimum Operating Voltage Range (V) Operating Mode 7.0 to 40 Voltage g Reference (V) Maximum Useful Oscillator Frequency (kHz) Device TA (°C) Package 5.0 ± 5.0%(1) 200 TL494 0 to +70 DIP–16 –25 to +85 DIP–16 0 to +70 DIP–16 –25 to +85 DIP–16 SG3525A 0 to +70 DIP–16 SG3526 0 to +125(2) DIP–18 MC34066 0 to +70 DIP–16 MC33066 –40 to +85 SO–16L 5.0 ± 1.5% ± 500 (Totem Pole MOSFET Drive Outputs) 5.1 ± 2.0% 8.0 to 40 ± 200 (Totem Pole MOSFET Drive Outputs) ±1500 (Totem Pole (T P l MOSFET Drive Out Outputs) uts) 300 400 5.0 ± 2.0% 9.6 to 20 Resonant (Z (Zero Current) 5.1 ± 2.0% 1000 TL594 DIP–16 Resonant (Z (Zero Voltage) 2000 MC34067 0 to +70 SO–16L DIP–16 MC33067 –40 to +85 SO–16L DIP–16 2000 (Totem Pole (T P l MOSFET Drive Out Outputs) uts) 9.2 to 30 Current or Voltage 5.1 ± 1.0% 1000 MC34025 0 to +70 SO–16L DIP–16 MC33025 1. Tolerance applies over the specified operating temperature range. 2. Junction Temperature Range. NOTE: Devices shaded in gray are best fit for Wireless Applications. http://onsemi.com 67 –40 to +105 SO–16L WIRELESS http://onsemi.com 68 WIRELESS Section 3 Discrete Components http://onsemi.com 69 WIRELESS High Current Surface Mount PNP Silicon Switching Transistors for Load Management in Portable Applications A Device of the X Family Features: MMBT6589T1 MBT35200MT1 Low VCE(sat) Transistors • • • • • • ON Semiconductor introduces two new low VCE(sat) transistors. The devices, referred to as the MBT35200MT1 and the MMBT6589T1 respectively, provide very low saturation voltages in a compact TSOP–6 package, reducing power losses thus extending battery life for portable and wireless equipment. The MBT35200MT1 offers a low–emitter collector saturation voltage of 0.125 volts (typical at an IC = 0.8 amps). This 35 volt, 2 amp PNP transistor boasts four pin–outs to the collector, to further enhance power dissipation (RJA Max 200C per watt). The MMBT6589T1 device offers a low–emitter collector saturation voltage of 0.25 volts (typical at an IC = 0.5 amps). This 30 volt, 2 amp PNP transistor offers three pin–outs to the collector and a high power dissipation (PD) improvement up to 540 mW. The two devices reduce saturation voltage by up to 30% over traditional transistors. The TSOP–6 package offers a lower profile and smaller footprint than the standard SOT–223 and SOT–89, offering a board–space savings of over 76%, allowing designers to use these devices in place of the much larger packages i n most switching applications. Low Emitter–Collector Saturation Voltage High Collector Current Capability Small Surface Mount Package High Power Dissipation Low Turn–On Voltage Improved Peak Current Handling Capabilities Benefits: • Reduced VCE(sat) Provides Lower Power Consumption and Higher Energy Efficiency • Small TSOP–6 Package Enables Replacement of • • • SOT–223 and SOT–89 Packages Ensures Extended Battery Life by Preserving Battery Power Cost Effective Alternative to MOSFET Device Provides Customers an Alternative Source for a Supplier Base ORDERING INFORMATION Device Package Voltage Amperes Temp. Range MBT35200MT1 TSOP–6 35 V 2A –55 to 150C MMBT6589T1 TSOP–6 30 V 2A –55 to 150C http://onsemi.com 70 WIRELESS Bias Resistor Transistors C (OUT) B (IN) R 1 R2 E (GND) These devices include monolithic bias resistors on the chip with the transistor. See the BRT diagram for orientation of resistors. Device NPN NPN PNP V(BR)CEO ( ) Volts (Min) 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 Marking PNP [email protected] IC Min 35 60 80 80 160 160 3.0 8.0 15 80 80 mA IC mA Max R1 Ohm R2 Ohm 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 50 50 50 50 50 50 50 50 50 50 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K R1 Ohm R2 Ohm 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 47K Case 419–02 – SC–70/SOT–323 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 Device NPN NPN PNP V(BR)CEO ( ) Volts (Min) 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 50 50 50 50 50 50 50 50 50 50 50 50 Marking PNP [email protected] IC Min mA IC mA Max 35 60 80 80 160 160 3.0 8.0 15 80 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 100 Case 419B–01 – SOT–363 Duals MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 http://onsemi.com 71 WIRELESS Bias Resistor Transistors (continued) hFE @ IC Device Marking V(BR)CEO Min mA IC mA Max R1 Ohm R2 Ohm 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 47K Case 419B–01 – SOT–363 – Dual Combination NPN and PNP MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 11 12 13 14 15 16 3X 31 32 33 34 35 50 50 50 50 50 50 50 50 50 50 50 50 Device NPN 35 60 80 80 160 160 3.0 8.0 15 80 80 80 PNP NPN [email protected] IC PNP V(BR)CEO ( ) Volts (Min) Min – 59 43 50 50 50 100 80 15 Marking mA IC mA Max R1 Ohm R2 Ohm 1.0 5.0 5.0 100 100 100 10K 10K 4.7K ∞ 47K 4.7K Case 463–01 – SOT–416/SC–75 DTC114TE DTC114YE – – DTA114YE DTA143EE 94 69 – http://onsemi.com 72 WIRELESS Silicon Hot-Carrier Diodes MMDL301T1 TA = –55 to +150C, SOD–323 ORDERING INFORMATION Device MMDL301T1 Operating Temperature Range Package TA = –55 to +150C SOD–323 Voltage Variable Capacitance Diode for UHF Band Radio • • • • • MMVL229AT1 This device is designed for UHF tuning and general frequency control and tuning. This device is supplied in the SOD–323 plastic surface mount package for high volume, pick and place assembly requirements, and is a member of the ON Semiconductor microExecutive series. High Figure of Merit – Q Guaranteed Capacitance Range Controlled and Uniform Tuning Ratio 0805 Footprint Compatible SOD–323 package Available in Tape and Reel Silicon Pin Diode • Rugged PIN Structure Coupled with Wirebond MMVL3401T1 Construction for Optimum Reliability This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Low Capacitance 0.7 pF Typ at VR = 20 Vdc • Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ) @ IF = 10 mAdc • Device Marking: 4D ORDERING INFORMATION Device MMVL3401T1 Package Shipping SOD–323 3000 Tape & Reel Advance Information Voltage Variable Capacitance Diode for UHF Band Radio MMVL535T1 This device is designed for UHF tuning and general frequency control and tuning. This device is supplied in the SOD–323 plastic surface mount package for high volume, pick and place assembly requirements, and is a member of the ON Semiconductor microExecutive series. http://onsemi.com 73 WIRELESS MOSFETs SC–70/SOT–323 – Case 419–04 Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 20 1 – – 0.3 MMBF2201NT1 0.15 N–Channel 20 2.2 – – 0.3 MMBF2202PT1 0.15 P–Channel Package EZFET – SO–8 Power MOSFETs with Zener Gate Protection – Case 751–06 Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 20 – 0.027 – 7 MMDF7N02Z 2 Dual N–Channel Package Micro8 – Case 846A–02 Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 20 – 0.04 0.05 4.0 MTSF3N02HD 1.79 N–Channel Package TSSOP–8 – Case 948S Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 30 – 0.03 0.04 5.8 NTQD6866 1.6 Dual N–Channel Package TSSOP–6 – Case 318G–02 Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 30 0.065 0.095 – 4.2 MGSF3454VT1 2 N–Channel 20 – 0.07 0.085 4 MGSF3442VT1 2 N–Channel 30 0.1 0.19 – 3.5 MGSF3455VT1 0.4 P–Channel 12 – – 0.098 3.3 MGSF3433VT1 2 P–Channel 20 – 0.045 0.055 5.8 NTGS3446T1 1.6 N–Channel 20 – 0.09 0.135 1.65 NTGS3441T1 0.5 P–Channel 20 – – 0.1 – NTGS3445T1 – P–Channel 20 – – 0.1 – NTGS3443T1 – P–Channel Package ChipFET Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration Package 20 – – 0.083 5.3 NTHS5441T1 2.5 P–Channel – http://onsemi.com 74 WIRELESS MOSFETs (continued) DPAK – Case 369A–13 (TO–252) Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 800 12 – – 1 MTD1N80E 48 N–Channel 800 2.3 – – 4 NTD4N60 96 N–Channel 30 – 0.099 – 19 MTD20P03HDL 75 P–Channel FETKY Package – SO–8 MOSFET with Schottky Rectifier – Case 751–06 Max RDS(on) @ VGS V(BR)DSS (volts) min 10 V 5V 2.5 V ID (cont) Amps Device PD Configuration 20 0.16 0.18 0.39 3.3 MMDFS2P102 2 P–Channel with Schottky Rectifier http://onsemi.com 75 Package WIRELESS Rectifiers Surface Mount Schottky Rectifiers VRRM (Volts) IO (Amps) (Note 1.) IO Rating Condition IFSM (Amps) TJ Max (C) Max IR TJ = 25C (mA) (Note 2.) Max IR (mA) (Note 3.) 20 0.5 TL = 90°C MBR0520LT1 MBR0520LT3 0.310 @ 0.1 A 0.385 @ 0.5 A 5 125 .075 @ 10 V .250 @ 20 V 5 @ 10 V 8 @ 20 V 30 0.5 TL = 100°C MBR0530T1 MBR0530T3 0.375 @ 0.1 A 0.430 @ 0.5 A 5 125 .020 @ 15 V .130 @ 30 V – 40 0.5 TL = 110°C MBR0540T1 MBR0540T3 0.53 @ 0.5 A 5 150 .010 @ 20 V .020 @ 40 V – 20 1 TC = 130°C MBRM120ET3 0.455 @ 0.1 A 0.530 @ 1.0 A 50 150 0.010 @ 20 V 1.6 @ 20 V 20 1 Ttab ≤ 100°C MBRM120LT3 0.36 @ 0.1 A 0.45 @ 1 A 50 125 0.4 @ 20 V N/A 30 1 MBRM130LT3 0.45 @ 1.0 A 50 125 1 N/A 40 1 TC = 135°C Ttab ≤ 100°C MBRM140T3 0.39 @ 0.1 A 0.55 @ 1 A 50 125 0.5 @ 40 V N/A 30 1 TC ≤ 105°C MBRA130LT3 0.41 @ 1 A 0.47 @ 2 A 25 125 1.0 @ 30 V 0.4 @ 15 V 25 @ 30 V 40 1 TC ≤ 100°C MBRA140T3 0.60 @ 1 A 0.73 @ 2 A 25 125 1.0 @ 40 V 0.2 @ 20 V 25 @ 40 V 20 1 0.55 @ 1.0 A 40 125 1 10 1 MBRS130LT3 0.395 @ 1.0 A 40 125 1 10 30 1 TL = 115°C TL = 120°C TL = 115°C MBRS120T3 30 MBRS130T3 0.55 @ 1.0 A 40 125 1 10 40 1 MBRS140T3 0.6 @ 1.0 A 40 125 1 10 40 1 TL = 115°C TC = 110°C MBRS140LT3 0.5 @ 1.0 A 40 125 0.4 10 90 1 TL = 120°C TL = 120°C MBRS190T3 0.75 @ 1.0 A 50 125 0.5 5 MBRS1100T3 0.75 @ 1.0 A 40 150 0.5 5 MBRS1540T3 0.46 @ 1.5 A 40 125 0.8 5.7 MBRS240LT3 0.43 @ 2 A 0.53 @ 4 A 25 125 2.0 @ 40 V 0.5 @ 20 V 60 @ 40 V 40 @ 20 V 0.43 @ 2 A 0.50 @ 4 A 70 125 0.80 @ 40 V 0.10 @ 20 V 20 @ 40 V 6.0 @ 20 V Device Max VF @ iF TC = 25C (Volts) 100 1 40 1.5 40 2 TC = 100°C TC ≤ 95°C 40 2 TC = 103°C MBRS2040LT3 20 3 0.50 @ 3.0 A 80 125 2 20 3 TL = 100°C TL = 100°C MBRS320T3 30 MBRS330T3 0.50 @ 3.0 A 80 125 2 20 40 3 0.525 @ 3.0 A 80 125 2 20 3 TL = 100°C TL = 100°C MBRS340T3 60 MBRS360T3 0.74 @ 3.0 A 80 125 0.5 20 20 3 MBRD320T4 0.60 @ 3.0 A 75 150 0.2 20 @ 125°C 30 3 TC = 125°C TC = 125°C MBRD330T4 0.60 @ 3.0 A 75 150 0.2 20 @ 125°C 40 3 MBRD340T4 0.60 @ 3.0 A 75 150 0.2 20 @ 125°C 50 3 TC = 125°C TC = 125°C MBRD350T4 0.60 @ 3.0 A 75 150 0.2 20 @ 125°C 60 3 MBRD360T4 0.60 @ 3.0 A 75 150 0.2 20 @ 125°C 20 6 TC = 125°C TC = 130°C MBRD620CTT4 0.70 @ 3.0 A 75 150 0.1 15 @ 125°C 30 6 0.70 @ 3.0 A 75 150 0.1 15 @ 125°C 6 TC = 130°C TC = 130°C MBRD630CTT4 40 MBRD640CTT4 0.70 @ 3.0 A 75 150 0.1 15 @ 125°C 50 6 0.70 @ 3.0 A 75 150 0.1 15 @ 125°C 6 TC = 130°C TC = 130°C MBRD650CTT4 60 MBRD660CTT4 0.70 @ 3.0 A 75 150 0.1 15 @ 125°C 35 8 TC = 100°C MBRD835L 0.40 @ 3.0 A 0.51 @ 8.0 A 100 125 1.4 35 35 10 TC = 90°C MBRD1035CTL 0.49 @ 10 A 1. IO is total device current capability. 2. VRRM unless noted. 3. VRRM, TJ = 100°C unless noted. All devices listed are ON Semiconductor preferred devices 100 125 2 130 @ 125°C http://onsemi.com 76 Package CASE 425-04 (SOD-123) Cathode = Band CASE 457–04 (POWERMITE) CASE 403B–01 403B 01 (SMA) 403-03 CASE 403 03 (SMB) C th d = N Cathode Notch t h or Polarity Band 03 CASE 403A 403A-03 (SMC) Cathode = Notch 1 CASE 369A-13 (DPAK) 4 3 “CT” Suffix S ffi 4 1 1 4 3 3 Non-“CT” Suffix WIRELESS Rectifiers (continued) Axial Lead Schottky Rectifiers Max VF @ iF TC = 25C (Volts) IFSM (Amps) TJ Max (C) Max IR TL = 25C (mA) (Note 2.) Max IR TL (mA) (Note 3.) 1N5817 0.45 @ 1.0 A 25 125 1 10 1N5818 0.55 @ 1.0 A 25 125 1 10 TA = 55°C RθJA = 80°C/W TA = 55°C 1N5819 0.60 @ 1.0 A 25 125 1 10 MBR150 0.75 @ 1.0 A 25 150 0.5 5 TA = 55°C RθJA = 80°C/W TA = 120°C RθJA = 50°C/W MBR160 0.75 @ 1.0 A 25 150 0.5 5 MBR1100 0.79 @ 1.0 A 50 150 0.5 5 TA = 76°C RθJA = 28°C/W TA = 71°C RθJA = 28°C/W 1N5820 0.457 @ 3.0 A 80 125 2 20 1N5821 0.500 @ 3.0 A 80 125 2 20 TA = 61°C RθJA = 28°C/W TA = 65°C RθJA = 28°C/W 1N5822 0.525 @ 3.0 A 80 125 2 20 MBR340 0.600 @ 3.0 A 80 150 0.6 20 TA = 65°C TA = 65°C RθJA = 28°C/W MBR350RL 0.600 @ 3.0 A 80 150 0.6 20 MBR360RL 0.740 @ 3.0 A 80 150 0.6 20 TA = 100°C RθJA = 28°C/W MBR3100 0.79 @ 3.0 A 150 150 0.6 20 VRRM (Volts) IO (Amps) IO Rating Condition 20 1 30 1 TA = 55°C RθJA = 80°C/W TA = 55°C RθJA = 80°C/W 40 1 50 1 60 1 100 1 20 3 30 3 40 3 40 3 50 3 60 3 100 3 Device Package CASE 59–04 59 04 Plastic Cathode = Polarity Band CASE 267-03 Plastic Cathode = Polarity Band Surface Mount Ultrafast Rectifiers VRRM (Volts) IO (Amps) (Note 1.) 50 1 100 1 150 1 200 1 400 1 600 1 400 3 400 600 IO Rating Condition Device Max trr (ns) Max VF @ iF TC = 25C (Volts) IFSM (Amps) TJ Max (C) Max IR TJ = 25C (mA) (Note 2.) Max IR(mA) (Note 3.) TL = 155°C TL = 155°C MURS105T3 35 0.875 @ 1.0 A 40 175 2 50 MURS110T3 35 0.875 @ 1.0 A 40 175 2 50 TL = 155°C TL = 155°C MURS115T3 35 0.875 @ 1.0 A 40 175 2 50 MURS120T3 35 0.875 @ 1.0 A 40 175 2 50 TL = 150°C TL = 150°C MURS140T3 75 1.25 @ 1.0 A 35 175 5 150 MURS160T3 75 1.25 @ 1.0 A 35 175 5 150 MURS320T3 35 0.875 @ 3.0 A 75 175 5 15 3 TL = 130°C TL = 130°C MURS340T3 75 1.25 @ 3.0 A 75 175 10 250 3 TL = 130°C MURS360T3 75 1.25 @ 3.0 A 75 175 10 250 Package SMB Cathode = Notch SMC Cathode = Notch Axial Lead Ultrafast Rectifiers VRRM (Volts) IO (Amps) IO Rating Condition 200 1 TA = 130°C RθJA = 50°C/W Device MUR120 Max trr (ns) Max VF @ iF TC = 25C (Volts) IFSM (Amps) TJ Max (C) Max IR TL = 25C (mA) (Note 2.) Max IR (mA) (Note 3.) 25 0.875 @ 1.0 A 35 175 2 50 Package CASE 59-04 Plastic Cathode = Polarity Band 200 4 TA = 80°C RθJA = 28°C/W MUR420 25 0.875 @ 3.0 A 125 175 5 150 CASE 267-03 Plastic Cathode = Polarity Band 1. IO is total device current capability. 2. VRRM unless noted 3. VRRM, TJ = 100°C unless noted http://onsemi.com 77 WIRELESS Zener Diodes Surface Mount Packages Nominal Zener Break– down Voltage 200 mW 225 mW 500 mW 1.5 Watt 3 Watt SOD–323 SOT-23 SOD-123 SMA SMB Plastic Case 425, Style 1 Plastic Case 403A Cathode = Notch Plastic Case 403B 1SMA5913BT3 1SMA5914BT3 1SMB5913BT3 1SMB5914BT3 Cathode Anode Volts No Connection Plastic Case 318 TO-236AB ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁ ÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ Case 477 Style 1 1.8 2.0 2.2 2.4 2.5 MM3Z2V4T1 2.7 2.8 3.0 3.3 3.6 BZX84C2V4LT1 MMBZ5221BLT1 MMBZ5222BLT1 MMSZ2V4T1 MMSZ4678T1 MMSZ4679T1 MMSZ4680T1 MMSZ4681T1 BZX84C2V7LT1 MMSZ2V7T1 MMSZ4682T1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C3V6LT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 MMBZ5226BLT1 MMBZ5227BLT1 MMSZ3V0T1 MMSZ3V3T1 MMSZ3V6T1 MMSZ4683T1 MMSZ4684T1 MMSZ4685T1 MMSZ5223BT1 MMSZ5224BT1 MMSZ5225BT1 MMSZ5226BT1 MMSZ5227BT1 MMSZ5221BT1 MMSZ5222BT1 3.9 4.3 4.7 5.1 5.6 MM3Z3V9T1 MM3Z4V3T1 MM3Z4V7T1 MM3Z5V1T1 MM3Z5V6T1 BZX84C3V9LT1 BZX84C4V3LT1 BZX84C4V7LT1 BZX84C5V1LT1 BZX84C5V6LT1 MMBZ5228BLT1 MMBZ5229BLT1 MMBZ5230BLT1 MMBZ5231BLT1 MMBZ5232BLT1 MMSZ3V9T1 MMSZ4V3T1 MMSZ4V7T1 MMSZ5V1T1 MMSZ5V6T1 MMSZ4686T1 MMSZ4687T1 MMSZ4688T1 MMSZ4689T1 MMSZ4690T1 MMSZ5228BT1 MMSZ5229BT1 MMSZ5230BT1 MMSZ5231BT1 MMSZ5232BT1 1SMA5915BT3 1SMA5916BT3 1SMA5917BT3 1SMA5918BT3 1SMA5919BT3 1SMB5915BT3 1SMB5916BT3 1SMB5917BT3 1SMB5918BT3 1SMB5919BT3 6.0 6.2 6.8 7.5 8.2 MM3Z6V2T1 MM3Z6V8T1 MM3Z7V5T1 MM3Z8V2T1 BZX84C6V2LT1 BZX84C6V8LT1 BZX84C7V5LT1 BZX84C8V2LT1 MMBZ5233BLT1 MMBZ5234BLT1 MMBZ5235BLT1 MMBZ5236BLT1 MMBZ5237BLT1 MMSZ6V2T1 MMSZ6V8T1 MMSZ7V5T1 MMSZ8V2T1 MMSZ4691T1 MMSZ4692T1 MMSZ4693T1 MMSZ4694T1 MMSZ5233BT1 MMSZ5234BT1 MMSZ5235BT1 MMSZ5236BT1 MMSZ5237BT1 1SMA5920BT3 1SMA5921BT3 1SMA5922BT3 1SMA5923BT3 1SMB5920BT3 1SMB5921BT3 1SMB5922BT3 1SMB5923BT3 8.7 9.1 10 11 12 MM3Z9V1T1 MM3Z10VT1 MM3Z11VT1 MM3Z12VT1 BZX84C9V1LT1 BZX84C10LT1 BZX84C11LT1 BZX84C12LT1 MMBZ5238BLT1 MMBZ5239BLT1 MMBZ5240BLT1 MMBZ5241BLT1 MMBZ5242BLT1 MMSZ9V1T1 MMSZ10T1 MMSZ11T1 MMSZ12T1 MMSZ4695T1 MMSZ4696T1 MMSZ4697T1 MMSZ4698T1 MMSZ4699T1 MMSZ5238BT1 MMSZ5239BT1 MMSZ5240BT1 MMSZ5241BT1 MMSZ5242BT1 1SMA5924BT3 1SMA5925BT3 1SMA5926BT3 1SMA5927BT3 1SMB5924BT3 1SMB5925BT3 1SMB5926BT3 1SMB5927BT3 13 14 15 16 17 MM3Z13VT1 BZX84C13LT1 1SMB5928BT3 1SMB5929BT3 BZX84C15LT1 BZX84C16LT1 MMSZ5243BT1 MMSZ5244BT1 MMSZ5245BT1 MMSZ5246BT1 MMSZ5247BT1 1SMA5928BT3 MM3Z15VT1 MM3Z16VT1 MMSZ4700T1 MMSZ4701T1 MMSZ4702T1 MMSZ4703T1 MMSZ4704T1 1SMA5929BT3 1SMA5930BT3 1SMB5930BT3 18 19 20 22 24 MM3Z18VT1 BZX84C18LT1 1SMB5931BT3 BZX84C20LT1 BZX84C22LT1 BZX84C24LT1 MMSZ5248BT1 MMSZ5249BT1 MMSZ5250BT1 MMSZ5251BT1 MMSZ5252BT1 1SMA5931BT3 MM3Z20VT1 MM3Z22VT1 MM3Z24VT1 MMSZ4705T1 MMSZ4706T1 MMSZ4707T1 MMSZ4708T1 MMSZ4709T1 1SMA5932BT3 1SMA5933BT3 1SMA5934BT3 1SMB5932BT3 1SMB5933BT3 1SMB5934BT3 MM3Z27VT1 BZX84C27LT1 MMSZ5253BT1 MMSZ5254BT1 MMSZ5255BT1 MMSZ5256BT1 MMSZ5257BT1 1SMA5935BT3 1SMB5935BT3 MMSZ30T1 MMSZ33T1 MMSZ4710T1 MMSZ4711T1 MMSZ4712T1 MMSZ4713T1 MMSZ4714T1 1SMA5936BT3 1SMA5937BT3 1SMB5936BT3 1SMB5937BT3 MMSZ36T1 MMSZ39T1 MMSZ4715T1 MMSZ4716T1 MMSZ5258BT1 MMSZ5259BT1 1SMA5938BT3 1SMA5939BT3 1SMB5938BT3 1SMB5939BT3 25 27 28 30 33 36 39 MMBZ5243BLT1 MMBZ5244BLT1 MMBZ5245BLT1 MMBZ5246BLT1 MMBZ5247BLT1 MMSZ13T1 MMBZ5248BLT1 MMBZ5249BLT1 MMBZ5250BLT1 MMBZ5251BLT1 MMBZ5252BLT1 MMSZ18T1 BZX84C30LT1 BZX84C33LT1 MMBZ5253BLT1 MMBZ5254BLT1 MMBZ5255BLT1 MMBZ5256BLT1 MMBZ5257BLT1 BZX84C36LT1 BZX84C39LT1 MMBZ5258BLT1 MMBZ5259BLT1 MMSZ15T1 MMSZ16T1 MMSZ20T1 MMSZ22T1 MMSZ24T1 MMSZ27T1 http://onsemi.com 78 WIRELESS 5.6 Volt through 33 Volt SOT-23 Dual Monolithic Common Anode Zeners Transient Voltage Suppressors for ESD Protection Features: MMBZ5V6ALT1 • SOT–23 Package Allows Either Two Separate Dual Common Anode Series These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. • • • • Unidirectional Configurations or a Single Bidirectional Configuration Peak Power – 24 or 40 Watts @ 1.0 ms (Unidirectional) Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 µA ESD Rating of Class N (exceeding 16 kV) per the Human Body Model 1 3 2 PIN 1. CATHODE 2. CATHODE 3. ANODE ORDERING INFORMATION Device Package Shipping MMBZ5V6ALT1 SOT–23 3000/Tape & Reel MMBZ5V6ALT3 SOT–23 10,000/Tape & Reel MMBZ6V2ALT1 SOT–23 3000/Tape & Reel MMBZ6V2ALT3 SOT–23 10,000/Tape & Reel MMBZ6V8ALT1 SOT–23 3000/Tape & Reel MMBZ6V8ALT3 SOT–23 10,000/Tape & Reel MMBZ15VALT1 SOT–23 3000/Tape & Reel MMBZ15VALT3 SOT–23 10,000/Tape & Reel MMBZ20VALT1 SOT–23 3000/Tape & Reel MMBZ20VALT3 SOT–23 10,000/Tape & Reel MMBZ33VALT1 SOT–23 3000/Tape & Reel MMBZ33VALT3 SOT–23 10,000/Tape & Reel http://onsemi.com 79 WIRELESS Zener Voltage Regulator Diodes 200 mW SOD323 Surface Mount Mechanical Characteristics: MM3Z2V4T1 • • • • • This series of Zener diodes is packaged in a SOD323 surface mount package which has a power dissipation of 200 milliwatts. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Void Free, Transfer–molded Plastic All External Surfaces are Corrosion Resistant Leads are Plated with Pb/Sn for Ease of Solderability Flammability Rating: UL94 V–0 Package Weight (per unit): 4.507 mg/unit Marking and Packing: • 8 mm Wide Tape • Cathode Indicated with a Band • Part is marked with three characters. The first two Features: • Voltage Range is 2.4 to 75 Volts • Steady State Power Rating of 200 mW • Small Body Outline Dimensions: 0.067″ X 0.049″ (1.7 digits are found in the attached table. The third digit is a date code. mm X 1.25 mm) • Low Body Height: 0.035″ (0.9 mm) ORDERING INFORMATION Device Package Shipping MM3ZxxxT1 SOD323 3000/Tape & Reel http://onsemi.com 80 WIRELESS Transient Voltage Suppressors MMQA Series SC–59 Quad Transient Voltage Suppressor; 24 Watts Peak Power ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA) Max Reverse Leakage Current Breakdown Voltage VZT (V) Device Min Nom 2 IR VR (mA) (nA) (V) Max 6 1 @ IZT 5 4 CASE 318F-02 STYLE 1 SC-59 PLASTIC 3 Max Zener Impedance Max Reverse S rge Surge Current Max Reverse Voltage @ IRSM (Clamping Voltage) Max Temp Coefficient of VZ IRSM (A) VRSM (V) (mV/°C) ZZT @ IZT (Ω) (mA) 1 6 2 5 3 4 MMQA5V6T1,T3 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26 MMQA6V2T1,T3 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6 MMQA6V8T1,T3 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9 MMQA12VT1,T3 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14 MMQA13VT1,T3 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15 MMQA15VT1,T3 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16 MMQA18VT1,T3 17.1 18 18.9 1.0 75 14 80 0.923 26 19 MMQA20VT1,T3 19 20 21 1.0 75 15 80 0.84 28.6 20.1 MMQA21VT1,T3 20 21 22.1 1.0 75 16 80 0.792 30.3 21 MMQA22VT1,T3 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22 MMQA24VT1,T3 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25 MMQA27VT1,T3 25.7 27 28.4 1.0 75 21 125 0.615 39 28 MMQA30VT1,T3 28.5 30 31.5 1.0 75 23 150 0.554 43.3 32 MMQA33VT1,T3 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37 MSQA6V1W5 SC–88A/SOT–353 Quad Array for ESD Protection Device Breakdown Voltage VBR @ 1 mA (Volts) Min Nom Max Leakage Current IRM @ VRM = 3 V Capacitance @ 0 V Bias Max VF @ IF = 200 mA (µA) (pF) (V) 1 CASE 419A SC–88A/SOT–353 5 2 3 MSQA6V1W5 6.1 6.6 7.2 1.0 http://onsemi.com 81 4 90 1.25 WIRELESS Transient Voltage Suppressors (continued) P6KE Series Peak Power Dissipation (600 Watts @ 1 ms Surge) Case 17 — Surmetic 40 IRSM IRSM 2 0 2 3 4 5 6 Time (ms) Surge Current Characterisitcs CASE 17 PLASTIC Cathode = Polarity Band 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 A Pulse (except bidirectional devices). Breakdown ea do Voltage VBR (Volts) Working g Peak R Reverse Voltage VRWM (Volts) Maximum R Reverse Leakage @ VRWM IR (µA) Maximum Reverse Surge S rge Current IRSM (Amps) Maximum Reverse V R Voltage l @ IRSM (Clamping Voltage) VRSM (Volts) Nom @ IT Pulse (mA) 100 110 120 130 1 1 1 1 P6KE100A P6KE110A P6KE120A P6KE130A 85.5 94 102 111 5 5 5 5 4.4 4 3.6 3.3 137 152 165 179 150 160 170 180 200 1 1 1 1 1 P6KE150A P6KE160A P6KE170A P6KE180A P6KE200A 128 136 145 154 171 5 5 5 5 5 2.9 2.7 2.6 2.4 2.2 207 219 234 246 274 Device For bidirectional types use CA suffix, P6KE7.5CA and P6KE11CA are ON Semiconductor preferred devices. http://onsemi.com 82 WIRELESS Transient Voltage Suppressors (continued) 1SMB Series 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted). Device Reverse St d Off Stand-Off Voltage VR Volts (1) Breakdown Voltage VBR @ IT Volts Min mA Maximum Cl i Clamping Voltage VC @ Ipp Volts Peak Pulse P lse Current C rrent Ipp Amps Maximum R L k Reverse Leakage @ VR IR µA Device Marking SMB CASE 403A PLASTIC 1SMB78AT3 1SMB85AT3 1SMB90AT3 1SMB100AT3 78 85 90 100 86.7 94.4 100 111 1.0 1.0 1.0 1.0 126 137 146 162 4.7 4.4 4.1 3.7 5.0 5.0 5.0 5.0 NT NV NX NZ 1SMB110AT3 1SMB120AT3 1SMB130AT3 1SMB150AT3 110 120 130 150 122 133 144 167 1.0 1.0 1.0 1.0 177 193 209 243 3.4 3.1 2.9 2.5 5.0 5.0 5.0 5.0 PE PG PK PM 1SMB160AT3 1SMB170AT3 160 170 178 189 1.0 1.0 259 275 2.3 2.2 5.0 5.0 PP PR 1SMB10CAT3 1SMB11CAT3 1SMB12CAT3 1SMB13CAT3 10 11 12 13 11.1 12.2 13.3 14.4 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 5.0 5.0 5.0 5.0 KXC KZC LEC LGC 1SMB14CAT3 1SMB15CAT3 1SMB16CAT3 1SMB17CAT3 14 15 16 17 15.6 16.7 17.8 18.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 5.0 5.0 5.0 5.0 LKC LMC LPC LRC 1SMB18CAT3 1SMB20CAT3 1SMB22CAT3 1SMB24CAT3 18 20 22 24 20.0 22.2 24.4 26.7 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 5.0 5.0 5.0 5.0 LTC LVC LXC LZC 1SMB26CAT3 1SMB28CAT3 1SMB30CAT3 1SMB33CAT3 26 28 30 33 28.9 31.1 33.3 36.7 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 5.0 5.0 5.0 5.0 MEC MGC MKC MMC 1SMB36CAT3 1SMB40CAT3 1SMB43CAT3 1SMB45CAT3 36 40 43 45 40.0 44.4 47.8 50.0 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.7 10.3 9.3 8.6 8.3 5.0 5.0 5.0 5.0 MPC MRC MTC MVC 1SMB48CAT3 1SMB51CAT3 1SMB54CAT3 1SMB58CAT3 48 51 54 58 53.3 56.7 60.0 64.4 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 5.0 5.0 5.0 5.0 MXC MZC NEC NGC 1SMB60CAT3 1SMB64CAT3 1SMB70CAT3 1SMB75CAT3 60 64 70 75 66.7 71.1 77.8 83.3 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 5.0 5.0 5.0 5.0 NKC NMC NPC NRC 1SMB78CAT3 78 86.7 1.0 126 4.7 5.0 NTC A transient suppressor is normally selected according to the reverse “Stand Off Voltage” (VR) which should be equal to or greater than the DC or continuous peak operating voltage level. http://onsemi.com 83 WIRELESS Zener Transient Voltage Suppressor Powermite Package Features: 1PMT16AT3 • Stand–off Voltage – 16 V • Peak Power – 175 Watts @ 1 ms The 1PMT16A is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heat sink design. The Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one f the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. • • • • – 1000 Watts @ 20 µs Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model Low Profile – Maximum Height of 1.1 mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint – Footprint Area of 8.45 mm2 • • • • • Supplied in 12 mm Tape and Reel – 12,000 Units per Reel • Powermite is JEDEC Registered a s DO–216AA 1 2 PIN 1. CATHODE 2. ANODE ORDERING INFORMATION Device Package Shipping 1PMT16AT3 Powermite 12,000/Tape & Reel http://onsemi.com 84 WIRELESS Section 8 Logic ICs http://onsemi.com 85 WIRELESS Standard Families One–Gate VHC Logic Device Description Package MC74VHC1G01DFT2 Open Drain, 2–Input NAND SC–88A / SOT–353 MC74VHC1G03DFT2 Open Drain, 2–Input NOR SC–88A / SOT–353 MC74VHC1G05 Open Drain, Inverter SC–88A / SOT–353 MC74VHC1G07 Open Drain, Non–Inverting Buffer SC–88A / SOT–353 MC74VHC1G08DFT2 2–Input AND SC–88A / SOT–353 MC74VHC1GT08 2–Input AND with TTL Compatible Input SC–88A / SOT–353 MC74VHC1G09DFT2 Open Drain, 2–Input AND SC–88A / SOT–353 MC74VHC1G32DFT2 2–Input OR SC–88A / SOT–353 MC74VHC1GT32 2–Input OR with TTL Compatible Input SC–88A / SOT–353 MC74VHC1G50 CMOS Level Shifter/Buffer SC–88A / SOT–353 MC74VHC1GT50 CMOS Level Shifter/Buffer TTL Input SC–88A / SOT–353 MC74VHC1G86DFT2 2–Input Exclusive OR SC–88A / SOT–353 MC74VHC1GT86DFT2 2–Input Exclusive OR with TTL Compatible Input SC–88A / SOT–353 MC74VHC1G125 Tri–state, Inverting Buffer SC–88A / SOT–353 MC74VHC1GT125 Tri–state, Inverting Buffer with TTL Compatible Input SC–88A / SOT–353 MC74VHC1G126 Tri–state, Non–Inverting Buffer SC–88A / SOT–353 MC74VHC1GT126 Tri–state, Non–Inverting Buffer with TTL Compatible Input SC–88A / SOT–353 MC74VHC1G132DFT2 2–Input NAND with Schmitt Trigger Input SC–88A / SOT–353 MC74VHC1G135DFT2 Open Drain, 2–Input NAND Schmitt Trigger SC–88A / SOT–353 Analog Switches Device Description Package MC74VHC1G66DFT2 Analog Switch SC–88A / SOT–353 MC74VHC1GT66DFT2 Analog Switch with TTL Compatible Input SC–88A / SOT–353 NLAS4501 SPDT Analog Switch SC–88A / SOT–353 NLAS4599 SPDT Analog Switch SC–88 http://onsemi.com 86 ON SEMICONDUCTOR MAJOR WORLDWIDE SALES OFFICES UNITED STATES ALABAMA Huntsville . . . . . . . . . . . . . . . 256–774–1000 CALIFORNIA Irvine . . . . . . . . . . . . . . . . . . . 949–623–6800 San Jose . . . . . . . . . . . . . . . 408–749–0510 COLORADO Littleton . . . . . . . . . . . . . . . . . 303–256–5884 FLORIDA Tampa . . . . . . . . . . . . . . . . . . 813–286–6181 GEORGIA Atlanta . . . . . . . . . . . . . . . . . 770–338–3810 ILLINOIS Chicago . . . . . . . . . . . . . . . . 847–413–2500 MASSACHUSETTS Boston . . . . . . . . . . . . . . . . . 781–229–5880 MICHIGAN Livonia . . . . . . . . . . . . . . . . . 734–953–6704 MINNESOTA Plymouth . . . . . . . . . . . . . . . 612–249–2360 NORTH CAROLINA Raleigh . . . . . . . . . . . . . . . . . 919–870–4355 PENNSYLVANIA Philadelphia/Horsham . . . . 215–957–4100 TEXAS Dallas . . . . . . . . . . . . . . . . . . 972–516–5100 CANADA ONTARIO INTERNATIONAL (continued) ITALY Ottawa . . . . . . . . . . . . . . . . . 613–226–3491 QUEBEC Milan . . . . . . . . . . . . . . . . . . . . . 39–02–82201 JAPAN St. Laurent . . . . . . . . . . . . . . 514–333–2125 Tokyo . . . . . . . . . . . . . . . . 81–3–5487–8345 KOREA Seoul . . . . . . . . . . . . . . . . . 82–2–3440–7200 INTERNATIONAL BRAZIL MALAYSIA Sao Paulo . . . . . . . . . . 55–011–3030–5244 CHINA Beijing . . . . . . . . . . . . . . . 86–10–6564–2288 Guangzhou . . . . . . . . . . 86–20–8753–7888 Shanghai . . . . . . . . . . . . 86–21–6374–7668 CZECH REPUBLIC Roznov . . . . . . . . . . . . . . 420–651–667–141 FINLAND Vantaa . . . . . . . . . . . . . 358–9–85–666–460 FRANCE Paris . . . . . . . . . . . . . . . 33–1–39–26–41–00 GERMANY Munich . . . . . . . . . . . . . . . . 49–89–92103–0 HONG KONG Hong Kong . . . . . . . . . . . . 852–2–610–6888 INDIA Bangalore . . . . . . . . . . . . . . 91–80–5598615 ISRAEL Herzelia . . . . . . . . . . . . . . . 972–9–9609–111 http://onsemi.com 87 Penang . . . . . . . . . . . . . . . . 60–4–228–2514 MEXICO Guadalajara . . . . . . . . . . . . . 523–669–9100 PHILIPPINES Manila . . . . . . . . . . . . . . . . . 63–2–809–2350 PUERTO RICO San Juan . . . . . . . . . . . . . . . 787–641–4100 SINGAPORE Singapore . . . . . . . . . . . . . . . . . . 65–4818188 SPAIN Madrid . . . . . . . . . . . . . . . . 34–91–745–6817 SWEDEN Stockholm . . . . . . . . . . . . 46–8–5090–4680 TAIWAN Taipei . . . . . . . . . . . . . . . 886–2–2718–9961 THAILAND Bangkok . . . . . . . . . . . . . . . 66–2–653–2220 UNITED KINGDOM Aylesbury . . . . . . . . . . . . 44–1–296–610400 ON SEMICONDUCTOR STANDARD DOCUMENT TYPE DEFINITIONS DATA SHEET CLASSIFICATIONS A Data Sheet is the fundamental publication for each individual product/device, or series of products/devices, containing detailed parametric information and any other key information needed in using, designing–in or purchasing of the product(s)/device(s) it describes. 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