PVA30 Series
Replaced by PVA30N
Data Sheet No. PD10030E
Series PVA30
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 40mA, 0-300V AC/DC
General Description
The Photovoltaic AC Relay (PVA) is a single-pole, normally
open solid state replacement for electro-mechanical
relays used for general purpose switching of analog
signals. It utilizes as an output switch a unique bidirectional
(AC or DC) MOSFET power IC termed a BOSFET. The
BOSFET is controlled by a photovoltaic generator of novel
construction, which is energized by radiation from a
dielectrically isolated light emitting diode (LED).
The PVA30 series combines very low solid state output
capacitance, very high off-state resistance and very fast
response. These Photovoltaic Relays are designed
specifically to accurately switch low-level signals in highperformance instrumentation systems.
The PVA overcomes the limitations of both conventional
and reed electromechanical relays by offering the solid
state advantages of long life, high operating speed, low
pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product
improvement and design innovations in many applications
such as process control, multiplexing, telecommunications,
automatic test equipment and data acquisition.
The PVA30 series can switch analog signals from thermocouple level to 300 volts peak AC or DC polarity. Signal
frequencies into the RF range are easily controlled and
switching rates up to 25kHz are achievable.
The extremely small thermally generated offset voltages
allow increased measurement accuracies. The critical output semiconductors are completely shielded from the
infra-red radiation of the input LED. Therefore, photocurrents in the output BOSFET are nonexistent and there
is not an output offset resulting from radiation from the
input LED drive.
Unique silicon technology developed by International Rectifier forms the heart of the PVA. The monolithic BOSFET
contains a bidirectional N-channel power MOSFET output
structure. In addition, this power IC chip has input circuitry
for fast turn-off and gate protection functions. This section
of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs,
resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The
excellent current conversion efficiency of this technique
results in the very fast response of the PVA microelectronic power IC relay.
This advanced semiconductor technology has created a
radically new control device. Designers can now develop
switching systems to new standards of electrical performance and mechanical compactness.
Features
BOSFET Power IC
1010 Operations
25µsec Operating Time
Low Output Capacitance
0.2µVolt Thermal Offset
Offset Independent of Input Drive
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
E
T
E
L
O
S
OB
■
■
■
■
■
■
■
■
■
■
■
■
Part Identification
Part Number
Operating
Voltage (AC/DC)
Sensitivity
0 – 300V
5 mA
PVA3054
PVA3055
Off-State
Resistance
1010 Ohms
1011 Ohms
(BOSFET is a trademark of International Rectifier)
5AHEAI28)!
Replaced by PVA30N
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVA3054
PVA3055
Units
Minimum Control Current (see figure 1)
For 40mA Continuous Load Current
For 22mA Continuous Load Current
5.0
5.0
DC
[email protected]°C
[email protected]°C
Maximum Control Current for Off-State Resistance at 25°C
10
µA(DC)
2.0 to 25
mA(DC)
7.0
V(DC)
Control Current Range (Caution: current limit input LED. See figure 6)
Maximum Reverse Voltage
E
T
E
L
O
S
OB
OUTPUT CHARACTERISTICS
PVA3054
Operating Voltage Range
Maxiumum Load Current 40°C (see figure 1)
PVA3055
Units
0 to ± 300
V(PEAK)
40
mA(DC)
25
µs
15
µs
Response Time @25°C (see figures 7 and 8)
Maximum T(on) @ 12mA Control, 20 mA Load, 100 VDC
Maximum T(off) @ 12mA Control, 20 mA Load, 100 VDC
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 10 mA Load, 5mA Control
Minimum Off-state Resistance 25°C @ 240 VDC
10
Maximum Off-state Leakage 25°C @ 5.0 VDC (see figure 5)
10
Minimum Off-State dv/dt
Maximum Output Capacitance (see figure 9)
10
Ω
0.05
nA
11
—
Maximum Thermal Offset Voltage @ 5.0mA Control VO(OS)
Ω
160
0.2
µvolts
1000
V/µs
3.0
pF @ 40VDC
2500
VRMS
GENERAL CHARACTERISTICS (PVA3054 and PVA3055)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Units
1012 @ 25°C - 50% RH
Ω
1.0
pF
+260
Operating
-40 to +85
Storage
-40 to +100
2
°C
5AHEAI28)!
Offset Voltage (µVolts)
Max. Load Current (mA)
Replaced by PVA30N
E
T
E
L
O
S
OB
Input control Current IF (mA)
Ambient Temperature (°C)
Figure 2. Offset Voltage
RDD(on) (Ohms)
Figure 1. Current Derating Curves
Ambient Temperature (°C)
Figure 3.Typical On Characteristics
Figure 4. Typical On-Resistance
3
Replaced by PVA30N
Nano-Amperes
Input Current (mA)
5AHEAI28)!
E
T
E
L
O
S
OB
LED Forward Voltage Drop (Volts DC)
Off-State Voltage (VDD) Volts
Figure 6. Input Characteristics
(Current Controlled)
ILED (mA)
Figure 5. Typical Variation of Off-State Leakage
Current
Delay Time (microseconds)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
4
Typical Capacitance (picofarads)
Replaced by PVA30N
5AHEAI28)!
E
T
E
L
O
S
OB
VDD Drain to Drain Voltage
Figure 9. Typical Output Capacitance
Wiring Diagram
5
5AHEAI28)!
Replaced by PVA30N
Case Outline
(Dimensions in millimeters (inches))
E
T
E
L
O
S
OB
Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/ Data and specifications subject to change without notice.
6
12/6/2000
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement