2SMES-01 - uri=media.digikey
Surface-mounted MEMS Switch
2SMES-01
Surface-mounted, ultracompact SPDT
MEMS switch usable up to 10-GHz band
(typical).
■ Exceptional high-frequency characteristics in a
broad spectrum up to 10 GHz (typical)
At 8 GHz (50Ω):
Isolation: 30 dB min.,
Insertion loss: 1 dB max.
■ Ultracompact size: 5.2×3.0×1.8 mm (L×W×H)
■ Contact switching endurance of over 100 million
cycles. (0.5 mA at 0.5 VDC, resistive load)
■ Power consumption of 10 µW max.
RoHS compliant
Equivalent Circuit Design
Application Example
• Semiconductor testers
+V1
GND
• High-frequency measurement devices
+V2
• RF components
RF_1
RF_C
RF_2
List of Models
Standard Models with Surface-mounting Terminals
Classification
Structure
Single-side stable Plastic sealed
Contact form
SPDT
Model
2SMES-01
Packaging
Package
quantity
Model
Minimum
order
2” IC Pack
56/Tray
2SMES-01
1
JEDEC Tray
250/Tray
2SMES-01CT
150
1
2SMES-01
2SMES-01
Specifications
■
Contact Switching Ratings
Item
Load
■
Resistive load
High-frequency Characteristics
Item
Frequency
2 GHz
8 GHz
10 GHz 12 GHz
Rated load
0.5 mA at 0.5 VDC
Isolation
---
30 dB
Rated carry current
100 mA at 10 VDC
Insertion Loss
---
1 dB
---
0.5 VDC
Return Loss
---
10 dB
0.5 mADC
Maximum peak power
36 dBm ---
---
Maximum carry power
30 dBm ---
---
1 dB
(Typ.)
RF: 30 dBm*
Maximum switching voltage
Maximum switching current
Maximum switching capacity 0.25 mW
Note:
Unless otherwise specified, initial values are based on a
temperature of 23°C and a humidity of 65%.
* These values are for a V.SWR of 1.2 or less at the load.
Note:
3 dB
---
1. The impedance of the measurement system is 50 Ω.
2. The above values are initial values.
3. These values are for a V.SWR of less than 1.2 at the
load.
4. Unless otherwise specified, initial values are based on
a temperature of 23°C and a humidity of 65%.
■
Input Ratings
Rated voltage (VDC)
DC
Note:
34±5%
Rated current (mA)
---
Must operate
voltage (V)
90% max. of rated
voltage
Must release
voltage (V)
10% min. of rated
voltage
Absolute
maximum voltage
(V)
40
Unless otherwise specified, initial values are based on a temperature of 23°C and a humidity of 65%.
Characteristics
Classification Single-side stable model
Item
Model 2SMES-01
Contact resistance
1,500 mΩ max. *
Operating time
100 µs max. (Depends on the rated voltage operation.)
100 µs max. (Depends on the rated voltage operation.)
Release time
Insulation
resistance
V-GND
100 MΩ (at 40 VDC)
others
100 MΩ (at 100 VDC)
Vibration
resistance
Destruction
10 Hz to 500 Hz 10 G
Malfunction
10 Hz to 500 Hz 10 G
Shock
resistance
Destruction
1,000 m/s2 (100 G)
Malfunction
1,000 m/s2 (100 G)
Life
Mechanical
expectancy Electrical
100,000,000 Operations min.
ESD
100 V (Human body model)
Ambient temperature
Operating: −20°C to 85°C (with no icing or condensation)
Ambient humidity
Operating: 5% to 85%
Weight
Approx. 0.1 g
Note:
100,000,000 Operations min.
1. The above values are initial values.
2. Unless otherwise specified, initial values are based on a temperature of 23°C and a humidity of 65%.
* The contact resistance was measured with 10 mA at 1 VDC with a voltage drop method.
2
Rated power
consumption (µW)
10
2SMES-01
2SMES-01
Typical Example of Drive Circuit for RF MEMS Switch
+Vcc
INPUT 1
Vcont_1
Gate Driver
RF_1
R
RF_com
R
INPUT 2
RF_2
DRIVER IC
Vcont_2
2SMES-01
1. This Switch uses an integrated structure for the DC-GND on the input side and the RF-GND on the output side. For a relay drive circuit, first be sure to ground the GND pins and then use a high-side switch to turn the operating voltage ON and OFF.
2. This Switch uses an electrostatic drive relay. To turn OFF the relay, the charge accumulated on the primary side must be discharged.
Install a discharge circuit in the relay drive circuit. The resistance value for discharge circuit must be 1 MΩ or less. If there is no discharge circuit, the relay will not turn OFF. This may result in contact sticking.
3. This Switch is designed so that the electrostatic actuator operates at a high speed. Because of this, the time constant of the drive
waveform may affect the operating characteristics and life performance of the Switch. Therefore, the drive circuit must be designed
so that the square wave time constant (τ) in the vicinity of the operating input pins (Vcont_1 and Vcont_2) is greater than 0.5 µs and
less than 10 µs.
3
2SMES-01
2SMES-01
Engineering Data (for reference)
■
High Frequency Characteristics
Insertion Loss
Isolation
Average value (initial)
Average value (initial)
0
0.0
−10
−0.5
−20
−1.0
−30
(dB) −40
(dB) −1.5
−50
−2.0
−60
−2.5
−3.0
−70
0
3
6
9
Frequency (GHz)
12
15
−80
0
3
6
9
Frequency (GHz)
12
15
Return Loss
Average value (initial)
0
−10
−20
(dB)
−30
−40
−50
Note:
0
3
6
9
Frequency (GHz)
12
15
1. These measurement results are for an ambient temperature of 23°C.
2. These high-frequency characteristics were measured with an RF probe (the Switch was not mounted to a PCB).
3. These high-frequency characteristics are the initial measurement results.
4. The high-frequency characteristics depend on the mounting board. Perform sufficient testing on the actual device, including durability tests, before actual use.
4
2SMES-01
2SMES-01
Electrical Endurance (Contact Resistance Shift)
1000
0.5 mA at 0.5 mVDC, Hot switch
Contact Resistance Shift (mΩ)
800
600
400
200
0
−200
−400
−600
N = 125 Samples (250 contacts)
−800
−1000
0
10
20
30
40
50
60
70
80
90
100
Operating cycles (Million operations)
Electrical Endurance (Pickup Voltage/Release Voltage)
35
Must Operate Voltage (30.6 V = 90%)
30
Voltage (V)
25
20
15
Operate Voltage (Ave):
Release Voltage (Ave):
10
N = 125 Samples (250 contacts)
5
Must Release Voltage (3.4 V = 10%)
0
0
10
20
30
40
50
60
70
80
90
100
Operating cycles (Million operations)
Ambient Temperature vs. Pickup voltage/Release Voltage
34
Pickup/Release Voltage (V)
32
Pickup Voltage
Release Voltage
30
28
26
24
22
20
18
16
−30
N = 8 Samples
−20
−10
0
10
20
30
40
50
60
70
80
90 100
Ambient Temperature (°C)
5
2SMES-01
2SMES-01
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
Mounting PAD Dimensions (Top View)
The dimensional tolerance for all measurements is ±0.1 mm.
0.7
0.7
3.6
2.65
1.35
0.45
No.11
No.7
5.2±0.1
3±0.1
0.6
0.7
0.45
1 pin mark
1.6
1.4
0.45
No.1
0.5
2.2
1.1
No.1
0.4
No.5
0.4
0.4
1.7
0.5
0.7
0.6
1.85±0.15
No.7
No.5
0.6
1.5
1.45
2.55
3.7
No.11
0.45
1
2.3
0.6
4.9
No. Pin Arrangement
1
GND
2
GND
3
RF_com
4
GND
5
GND
6
RF_2
7
GND
8
Vcont_2
9
GND
10 Vcont_1
11 GND
12 RF_1
Precautions for PCB Design
High-frequency GND Pad and High-frequency GND Plane Connections
Note:
indicates a high-frequency GND pad.
In case of Coplanar Waveguide
No.11
In case of Microstrip Line
No.7
No.1
No.7
No.1
No.5
No.5
Surface high-frequency GND plane
Through hole to the internal high-frequency GND plane
• Connect all high-frequency GND pads directly to the high-frequency GND plane.
Internal Connection (Top View)
No.11
No.7
No.1
6
No.11
No.5
Through hole to the internal
high-frequency GND plane
• Connect each high-frequency GND pad to the internal high-frequency GND plane through the through holes.
2SMES-01
2SMES-01
Temperature (°C)
Recommended Soldering Method
• We recommend a thickness of 150 to 200 µm for the solder
cream.
T4
T3
• We recommend that you use the recommended mounting PAD
dimensions for the land pattern.
• IRS (Infrared Reflow Soldering) Temperature Profile Conditions
During solder reflow, set the temperature conditions for the pins
and top surface of the case so that they are at or below the conditions listed in the following table, and then confirm that the conditions are met on the actual device.
T2
T1
• Avoid rapid cooling when cleaning after solder mounting. Use an
alcohol-based or water-based cleaning solution. Maintain a
cleaning temperature of 60°C max.
t1
Preheating
t2
Soldering
Time (s)
Item
Preheating (T1 to T2, t1)
Soldering (T3, t2)
Terminal
150°C to 180°C
230°C min.
120 s max.
30 s max.
Upper surface of case
---
---
Peak value (T4)
250°C max.
255°C max.
Safety Precautions
Precautions for Correct Use
● Handling the MEMS Switch
● Long-term Continuous ON Contacts
• Use the MEMS Switch as soon as possible and within one week
after opening the moisture-proof packaging. If the MEMS Switch
is left exposed for a long period of time after opening the moisture-proof packaging, this may negatively affect the external appearance and sealing performance of the Switch after it is
mounted. If you must store the Switch after it has been removed
from the moisture-proof packaging, place the Switch back into
the moisture-proof packaging, seal the packaging with tape, and
store in an environment of 10 to 30°C at 30% max. If baking is
performed after the Switch is removed from the packaging again,
do so at 80°C, 5% max. for 60 hours or less (one time only) and
mount the switch within 72 hours after baking (MSL3).
• Using the MEMS Switch in a circuit that is designed so that no
switching is performed and current is applied to the Switch for a
long period of time (more than 24 hours) may cause unstable
contacts. If the MEMS Switch must be used in this kind of circuit,
we recommend adding fail-safe circuits in case the contact fails.
● Claw Securing Force During Automatic Mounting
• During automatic insertion of an MEMS Switch, be sure to set the
securing force of each claw to the following value so that the RF
MEMS Switch’s characteristics will be maintained.
• Avoid rapid cooling when cleaning after solder mounting. Use an
alcohol-based or water-based cleaning solution. Also, maintain a
cleaning temperature of 60°C max.
Direction C: 2.0 N max.
• Do not perform hot switching that exceeds the ratings. (The rated
load is 0.5 mA at 0.5 VDC with a resistance load.)
• Do not use any ultrasonic cleaning methods.
• The MEMS Switch is extremely susceptible to static electricity.
Take the necessary precautions to eliminate static electricity
when handling the Switch (100 V max.). Implement measures to
eliminate static electricity before you handle the MEMS Switch.
Contact OMRON for additional guidelines.
● Precautions for Safe Usage
• Do not drop the Switch or attempt to disassemble it.
• Always turn OFF the power supply to the drive and load sides
and conduct thorough safety checks before replacing the MEMS
Switch or performing any wiring.
• Do not apply force to the Switch that would result in the Switch
deformation or changes in quality.
• Do not touch the MEMS Switch pins when power is being supplied. Doing so may result in electrical shock.
● Usage, Storage, and Transportation Environments
• Avoid contact with direct sunlight during use, storage, and transportation. Store the Switch at room temperature, normal humidity, and normal pressure.
• Avoid exposure to corrosive gases during usage, storage, and
transportation.
● Coating
• Do not use a silicon-based coating when mounting the Switch to
the PCB. Also, do not use any cleaning solutions that contain silicon when cleaning the PCB after the relay is mounted. The
cleaning solution may remain as a coating on the relay surface.)
7
2SMES-01
2SMES-01
For Reference Only
High-frequency Characteristic Measurement
Methods and Measurement PCBs
PCB for High-frequency Evaluation
The high-frequency characteristics of the 2SMES-01 are measured as described below.
Material: MEGTRON6 (R5775, permittivity: 3.6)
Board thickness t = 1.6 mm
Signal line width = 0.5 mm, Space = 0.2 mm (CPW)
2SMES-01
Agilent N5230
Vector Network
Analyzer
Device mounting area
ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.
To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.
Cat. No. A178-E1-03
In the interest of product improvement, specifications are subject to change without notice.
OMRON Corporation
Micro Devices Division H.Q.
Micro Devices Division
686-1 Ichimiyake, Yasu,
Shiga, 520-2326 JAPAN
Tel: (81)77-588-9200/Fax: (81)77-588-9909
0712
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