TLVx313 Low-Power, Rail-to-Rail In/Out, 500
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TLV313, TLV2313, TLV4313
SBOS753B – JUNE 2016 – REVISED FEBRUARY 2017
TLVx313 Low-Power, Rail-to-Rail In/Out, 500-µV Typical Offset,
1-MHz Operational Amplifier for Cost-Sensitive Systems
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
The TLV313 family of single-, dual-, and quadchannel precision operational amplifiers combine low
power consumption with good performance. This
makes them suitable for a wide range of applications,
such as wearables, utility metering, building
automation, currency counters and more. The family
features rail-to-rail input and output (RRIO) swings,
low quiescent current (65 μA, typical), wide bandwidth
(1 MHz) and very low noise (26 nV/√Hz at 1 kHz),
making it attractive for a variety of battery-powered
applications that require a good balance between
cost and performance. Further, low-input-bias current
enables these devices to be used in applications with
megaohm source impedances.
1
Precision Amplifier for Cost-Sensitive Systems
Low IQ: 65 µA/ch
Wide Supply Range: 1.8 V to 5.5 V
Low Noise: 26 nV/√Hz at 1 kHz
Gain Bandwidth: 1 MHz
Rail-to-Rail Input/Output
Low Input Bias Current: 1 pA
Low Offset Voltage: 0.75 mV
Unity-Gain Stable
Internal RF/EMI Filter
Extended Temperature Range:
–40°C to +125°C
The robust design of the TLV313 devices provides
ease-of-use to the circuit designer: unity-gain stability
with capacitive loads of up to 150 pF, integrated
RF/EMI rejection filter, no phase reversal in overdrive
conditions, and high electrostatic discharge (ESD)
protection (4-kV HBM).
2 Applications
•
•
•
•
•
Medical and Healthcare
Fitness and Wearable Electronics
Utility Metering (Heat, Water, Energy)
Building Automation Equipment
Currency Counters
The devices are optimized for operation at voltages
as low as +1.8 V (±0.9 V) and up to +5.5 V (±2.75 V),
and are specified over the extended temperature
range of –40°C to +125°C.
CMRR and PSRR vs Temperature
The single-channel TLV313 device is available in
both SC70-5 and SOT23-5 packages. The dualchannel TLV2313 device is offered in SOIC-8 and
VSSOP-8 packages, and the quad-channel TLV4313
device is offered in a TSSOP-14 package.
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
110
105
PSRR
100
95
90
Device Information(1)
CMRR
85
PART NUMBER
80
75
TLV313
70
65
TLV2313
VCM = ±0.2 V to 5.2 V
60
-50
-25
0
25
50
75
Temperature (oC)
100
125
TLV4313
PACKAGE
BODY SIZE (NOM)
SC70 (5)
2.00 mm × 1.25 mm
SOT23 (5)
2.90 mm × 1.60 mm
SOIC (8)
4.90 mm × 3.91 mm
VSSOP (8)
3.00 mm × 3.00 mm
TSSOP (14)
5.00 mm × 4.40 mm
C001
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV313, TLV2313, TLV4313
SBOS753B – JUNE 2016 – REVISED FEBRUARY 2017
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
8
1
1
1
2
3
3
6
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 6
Thermal Information: TLV313 ................................... 7
Thermal Information: TLV2313 ................................. 7
Thermal Information: TLV4313 ................................. 7
Electrical Characteristics: 5.5 V ................................ 8
Electrical Characteristics: 1.8 V .............................. 10
Typical Characteristics: Table of Graphs ................ 12
Typical Characteristics .......................................... 13
Detailed Description ............................................ 16
8.1 Overview ................................................................. 16
8.2 Functional Block Diagram ....................................... 16
8.3 Feature Description................................................. 17
8.4 Device Functional Modes........................................ 18
9
Application and Implementation ........................ 19
9.1 Application Information............................................ 19
9.2 Typical Application ................................................. 19
9.3 System Examples .................................................. 20
10 Power Supply Recommendations ..................... 21
10.1 Input and ESD Protection ..................................... 21
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 22
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Documentation Support ........................................
Receiving Notification of Documentation Updates
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (June 2016) to Revision B
•
Page
Changed pin assignment for DCK package ........................................................................................................................... 3
Changes from Original (June 2016) to Revision A
Page
•
Changed Product Status from Product Preview to Production Data ..................................................................................... 1
•
Changed the formatting of the Related Documentation section .......................................................................................... 23
•
Changed wording in the Receiving Notification of Documentation Updates section .......................................................... 23
2
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SBOS753B – JUNE 2016 – REVISED FEBRUARY 2017
5 Device Comparison Table
PACKAGE LEADS
DEVICE
NO. OF
CHANNELS
SC70
SOT23
SOIC
VSSOP
TSSOP
TLV313
1
5
5
—
—
—
TLV2313
2
—
—
8
8
—
TLV4313
4
—
—
—
—
14
6 Pin Configuration and Functions
DCK Package
5-Pin SC70
TLV313 Top View
+IN
1
V±
2
±IN
3
DBV Package
5-Pin SOT23
TLV313 Top View
5
V+
4
OUT
OUT
1
V±
2
+IN
3
Not to scale
5
V+
4
±IN
Not to scale
Pin Functions: TLV313
PIN
DCK
(SC70)
DBV
(SOT23)
I/O
+IN
1
3
I
Noninverting input
–IN
3
4
I
Inverting input
OUT
4
1
O
Output
V+
5
5
—
Positive (highest) power supply
V–
2
2
—
Negative (lowest) power supply
NAME
DESCRIPTION
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D, DGK Packages
8-Pin SOIC, 8-Pin VSSOP
TLV2313 Top View
OUT_A
1
8
V+
±IN_A
2
7
OUT_B
+IN_A
3
6
±IN_B
V±
4
5
+IN_B
Not to scale
Pin Functions: TLV2313
PIN
D (SOIC)
DGK
(VSSOP)
I/O
V–
4
4
—
Negative (lowest) power supply
V+
8
8
—
Positive (highest) power supply
OUT A
1
1
O
Output, channel A
OUT B
7
7
O
Output, channel B
–IN A
2
2
I
Inverting input, channel A
+IN A
3
3
I
Noninverting input, channel A
–IN B
6
6
I
Inverting input, channel B
+IN B
5
5
I
Noninverting input, channel B
NAME
4
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DESCRIPTION
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Product Folder Links: TLV313 TLV2313 TLV4313
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SBOS753B – JUNE 2016 – REVISED FEBRUARY 2017
PW Package
14-Pin TSSOP
TLV4313 Top View
OUT_A
1
14
OUT_D
±IN_A
2
13
±IN_D
+IN_A
3
12
+IN_D
V+
4
11
V±
+IN_B
5
10
+IN_C
±IN_B
6
9
±IN_C
OUT_B
7
8
OUT_C
Not to scale
Pin Functions: TLV4313
PIN
NAME
PW (TSSOP)
I/O
DESCRIPTION
V–
11
—
Negative (lowest) power supply
V+
4
—
Positive (highest) power supply
OUT A
1
O
Output, channel A
OUT B
7
O
Output, channel B
OUT C
8
O
Output, channel C
OUT D
14
O
Output, channel D
–IN A
2
I
Inverting input, channel A
+IN A
3
I
Noninverting input, channel A
–IN B
6
I
Inverting input, channel B
+IN B
5
I
Noninverting input, channel B
–IN C
9
I
Inverting input, channel C
+IN C
10
I
Noninverting input, channel C
–IN D
13
I
Inverting input, channel D
+IN D
12
I
Noninverting input, channel D
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
Supply voltage
Voltage
Signal input terminals
(2)
Signal input terminals (2)
Current
Operating, TA
(1)
(2)
(3)
V
(V+) + 0.5
V
–10
10
mA
150
°C
150
°C
150
°C
Continuous
–40
Junction, TJ
Storage, Tstg
UNIT
7
(V−) − (0.5)
Output short circuit (3)
Temperature
MAX
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input pins are diode-clamped to the power-supply rails. Input signals that may swing more than 0.5 V beyond the supply rails must be
current limited to 10 mA or less.
Short-circuit to ground, one amplifier per package.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VS
Supply voltage
1.8
5.5
V
TA
Specified temperature range
–40
125
°C
6
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UNIT
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SBOS753B – JUNE 2016 – REVISED FEBRUARY 2017
7.4 Thermal Information: TLV313
TLV313
THERMAL METRIC (1)
DBV (SOT23)
DCK (SC70)
5 PINS
5 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
228.5
281.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
99.1
91.6
°C/W
RθJB
Junction-to-board thermal resistance
54.6
59.6
°C/W
ψJT
Junction-to-top characterization parameter
7.7
1.5
°C/W
ψJB
Junction-to-board characterization parameter
53.8
58.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Thermal Information: TLV2313
TLV2313
THERMAL METRIC
(1)
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
UNIT
191.2
°C/W
RθJA
Junction-to-ambient thermal resistance
138.4
RθJC(top)
Junction-to-case (top) thermal resistance
89.5
61.9
°C/W
RθJB
Junction-to-board thermal resistance
78.6
111.9
°C/W
ψJT
Junction-to-top characterization parameter
29.9
5.1
°C/W
ψJB
Junction-to-board characterization parameter
78.1
110.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.6 Thermal Information: TLV4313
TLV4313
THERMAL METRIC
(1)
PW (TSSOP)
UNIT
14 PINS
RθJA
Junction-to-ambient thermal resistance
121.0
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
49.4
°C/W
RθJB
Junction-to-board thermal resistance
62.8
°C/W
ψJT
Junction-to-top characterization parameter
5.9
°C/W
ψJB
Junction-to-board characterization parameter
62.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: TLV313 TLV2313 TLV4313
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7.7 Electrical Characteristics: 5.5 V
At TA = 25°C, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2, unless otherwise noted. (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.75
3
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
dVOS/dT
Input offset voltage vs
temperature
PSRR
Power-supply rejection ratio
TA = –40°C to 125°C
74
mV
2
μV/°C
90
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
No phase reversal, rail-to-rail input
(V–) – 0.2
(VS–) – 0.2 V < VCM < (VS+) – 1.3 V
VCM = –0.2 V to 5.7 V
64
(V+) + 0.2
V
85
dB
80
dB
INPUT BIAS CURRENT
IB
Input bias current
±1
pA
IOS
Input offset current
±1
pA
6
μVPP
f = 10 kHz
22
nV/√Hz
f = 1 kHz
26
nV/√Hz
f = 1 kHz
5
fA/√Hz
Differential
1
pF
Common-mode
5
pF
104
dB
110
dB
65
°
NOISE
Input voltage noise (peak-topeak)
en
Input voltage noise density
in
Input current noise density
f = 0.1 Hz to 10 Hz
INPUT CAPACITANCE
CIN
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
Phase margin
(1)
8
0.05 V < VO < (V+) – 0.05 V, RL = 100 kΩ
0.3 V < VO < (V+) – 0.3 V, RL = 2 kΩ
100
VS = 5.0 V, G = +1
Parameters with minimum or maximum specification limits are 100% production tested at 25ºC, unless otherwise noted. Overtemperature limits are based on characterization and statistical analysis.
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Electrical Characteristics: 5.5 V (continued)
At TA = 25°C, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2, unless otherwise noted.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
VS = 5.0 V, CL = 10 pF
SR
Slew rate
VS = 5.0 V, G = +1
1
MHz
0.5
tS
Settling time
To 0.01%, VS = 5.0 V, 2-V step , G = +1
6
V/μs
μs
Overload recovery time
VS = 5.0 V, VIN × Gain > VS
3
μs
VO
Voltage output swing from supply
rails
RL = 100 kΩ (2)
ISC
Short-circuit current
RO
Open-loop output impedance
OUTPUT
RL = 2 kΩ (2)
5
20
mV
75
100
mV
±15
mA
2300
Ω
POWER SUPPLY
VS
Specified voltage range
IQ
Quiescent current per amplifier
TA = –40°C to 125°C, VS = 5.0 V, IO = 0 mA
65
Power-on time
VS = 0 V to 5 V, to 90% IQ level
10
(2)
1.8 (±0.9)
5.5 (±2.75)
V
90
µA
µs
Specified by design and characterization; not production tested.
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7.8 Electrical Characteristics: 1.8 V
At TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS+ – 1.3 V, and VOUT = VS / 2, unless otherwise noted. (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.75
3
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
dVOS/dT
Input offset voltage vs
temperature
PSRR
Power-supply rejection ratio
TA = –40°C to 125°C
74
mV
2
μV/°C
90
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
No phase reversal, rail-to-rail input
(V–) – 0.2
(V+) + 0.2
V
(VS–) – 0.2 V < VCM < (VS+) – 1.3 V
85
dB
VCM = –0.2 V to +1.8 V
73
dB
INPUT BIAS CURRENT
IB
Input bias current
±1
pA
IOS
Input offset current
±1
pA
6
μVPP
f = 10 kHz
22
nV/√Hz
f = 1 kHz
26
nV/√Hz
f = 1 kHz
5
fA/√Hz
Differential
1
pF
Common-mode
5
pF
0.1 V < VO < (V+) – 0.1 V, RL = 10 kΩ
110
dB
0.05 V < VO < (V+) – 0.05 V, RL = 100 kΩ
110
dB
NOISE
Input voltage noise (peak-topeak)
en
Input voltage noise density
in
Input current noise density
f = 0.1 Hz to 10 Hz
INPUT CAPACITANCE
CIN
OPEN-LOOP GAIN
AOL
(1)
10
Open-loop voltage gain
Parameters with minimum or maximum specification limits are 100% production tested at 25ºC, unless otherwise noted. Overtemperature limits are based on characterization and statistical analysis.
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Electrical Characteristics: 1.8 V (continued)
At TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS+ – 1.3 V, and VOUT = VS / 2, unless otherwise noted.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
CL = 10 pF
SR
Slew rate
G = +1
0.9
MHz
0.45
tS
Settling time
To 0.01%, VS = 5.0 V, 2-V step , G = +1
6
V/μs
μs
Overload recovery time
VS = 5.0 V, VIN × Gain > VS
3
μs
VO
Voltage output swing from supply
rails
RL = 100 kΩ (2)
ISC
Short-circuit current
RO
Open-loop output impedance
OUTPUT
RL = 2 kΩ (2)
5
mV
25
mV
±6
mA
2300
Ω
POWER SUPPLY
VS
Specified voltage range
IQ
Quiescent current per amplifier
TA = –40°C to 125°C, VS = 5.0 V, IO = 0 mA
65
Power-on time
VS = 0 V to 5 V, to 90% IQ level
10
(2)
1.8 (±0.9)
5.5 (±2.75)
V
90
µA
µs
Specified by design and characterization; not production tested.
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7.9 Typical Characteristics: Table of Graphs
Table 1. Table of Graphs
TITLE
FIGURE
Open-Loop Gain and Phase vs Frequency
Figure 1
Quiescent Current vs Supply Voltage
Figure 2
Offset Voltage Production Distribution
Figure 3
Offset Voltage vs Common-Mode Voltage (Maximum Supply)
Figure 4
CMRR and PSRR vs Frequency (RTI)
Figure 5
0.1-Hz to 10-Hz Input Voltage Noise (5.5 V)
Figure 6
Input Voltage Noise Spectral Density vs Frequency (1.8 V, 5.5 V)
Figure 7
Input Bias and Offset Current vs Temperature
Figure 8
Open-Loop Output Impedance vs Frequency
Figure 9
Maximum Output Voltage vs Frequency and Supply Voltage
Figure 10
Output Voltage Swing vs Output Current (over Temperature)
Figure 11
Closed-Loop Gain vs Frequency, G = 1, –1, 10 (1.8 V)
Figure 12
Small-Signal Step Response, Noninverting (1.8 V)
Figure 13
Small-Signal Step Response, Noninverting ( 5.5 V)
Figure 14
Large-Signal Step Response, Noninverting (1.8 V)
Figure 15
Large-Signal Step Response, Noninverting ( 5.5 V)
Figure 16
No Phase Reversal
Figure 17
EMIRR IN+ vs Frequency
Figure 18
12
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7.10 Typical Characteristics
At TA = 25°C, VS = 5 V, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2, unless otherwise noted.
140
180
Gain
58
Phase
135
CL=10pF
C
L = 10 pF
80
60
Phase (o)
Gain (dB)
100
Quiescent Current (µA/ch)
120
60
90
40
20
45
C
L = 100 pF
CL=100pF
0
56
54
52
50
48
46
44
42
-20
1
10
100
1k
10k 100k
Frequency (Hz)
1M
10M
0
100M
40
1.5
2.5
3
3.5
4
4.5
Supply Voltage (V)
5
5.5
6
C003
Figure 2. Quiescent Current vs Supply
9
1500
8
1200
Typical Units
VS = 5.5 V
900
Offset Voltage (µV)
7
6
5
4
3
600
300
0
-300
-600
Offset Voltage (mV)
2.5
2
1.5
1
0.5
0
-0.5
-1500
-1
-1200
0
-1.5
-900
1
-2
2
-2.5
Percent of Amplifiers (%)
Figure 1. Open-Loop Gain and Phase vs Frequency
2
0
0.5
1
C005
Figure 3. Offset Voltage Production Distribution
1.5 2 2.5 3 3.5 4
Common-Mode Voltage (V)
4.5
5
5.5
C007
Figure 4. Offset Voltage vs Common-Mode Voltage
100
Voltage Noise (1 µV/div)
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
120
80
+PSRR
60
CMRR
40
20
-PSRR
0
10
100
1k
10k
Frequency (Hz)
100k
Figure 5. CMRR and PSRR vs Frequency
(Referred-to-Input)
Time (1 s/div)
1M
C009
C011
Figure 6. 0.1-Hz to 10-Hz Input Voltage Noise
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Typical Characteristics (continued)
At TA = 25°C, VS = 5 V, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2, unless otherwise noted.
1000
200
150
Input Bias Current (pA)
9ROWDJH 1RLVH Q9 ¥+]
VS = 1.8 V
100
10
VS = 5.5 V
IBN
100
IBP
50
0
IOS
-50
1
-100
1
10
100
1k
Frequency (Hz)
10k
100k
-50
-25
0
25
50
Temperature (oC)
C012
Figure 7. Input Voltage Noise Spectral Density vs Frequency
75
125
C014
Figure 8. Input Bias and Offset Current vs Temperature
100k
6
RL = 10 k
CL = 10 pF
5
VS = 5.5 V
Output Voltage (V)
Output Impedance ( )
100
VS = 1.8 V
10k
4
VS = 1.8 V
3
2
1
VS = 5.5 V
1000
1
10
100
1k
Frequency (Hz)
10k
0
1000
100k
100k
1M
Frequency (Hz)
Figure 9. Open-Loop Output Impedance vs Frequency
C016
Figure 10. Maximum Output Voltage vs Frequency and
Supply Voltage
40
3
G = +10 V/V
2
1
20
oC
+125
+125oC
0
+25oC
+25 oC
Gain (dB)
Output Voltage Swing (V)
10k
C015
-40 oC
-40oC
-1
G = +1 V/V
0
-2
G = -1 V/V
VS = 1.8 V
-3
-20
0
5
10
Output Current (mA)
15
20
Figure 11. Output Voltage Swing vs Output Current (Over
Temperature)
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10
100
C017
1k
10k
100k
Frequency (Hz)
1M
10M
100M
C018
Figure 12. Closed-Loop Gain vs Frequency (Minimum
Supply)
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Typical Characteristics (continued)
G = +1 V/V
VS = 1.8V
VCM = 0.5V
RL = 10 kŸ
G = +1 V/V
VS = 5.5 V
RL = 10 k
CL = 100 pF
VIN
Voltage (25 mV/div)
Voltage (25 mV/div)
At TA = 25°C, VS = 5 V, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2, unless otherwise noted.
CL = 10 pF
CL = 100 pF
VIN
CL = 10 pF
Time (1 µs/div)
Time (1 µs/div)
C004
C023
Figure 13. Small-Signal Pulse Response
(Minimum Supply)
Figure 14. Small-Signal Pulse Response
(Maximum Supply)
Voltage (250 mV/div)
G = +1 V/V
VS = 5.5 V
RL = 10 k
Voltage (250 mV/div)
G = +1 V/V
VS = 1.8 V
RL = 10 k
VOUT
VIN
VOUT
VIN
Time (2.5 µs/div)
Time (2.5 µs/div)
C024
C025
Figure 15. Large-Signal Pulse Response
(Minimum Supply)
Figure 16. Large-Signal Pulse Response
(Maximum Supply)
120
PRF = -10 dBm
VSUPPLY = 5 V
VCM = 2.5 V
EMIRR IN+ (dB)
Voltage (1 V/div)
100
VOUT
80
60
40
20
VIN
0
Time (125 µs/div)
10
100
1000
Frequency (MHz)
C028
Figure 17. No Phase Reversal
10000
C033
Figure 18. EMIRR IN+ vs Frequency
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8 Detailed Description
8.1 Overview
The TLVx313 family of operational amplifiers are general-purpose devices that are ideal for a wide range of
portable, low-cost applications. Rail-to-rail input and output swings, low quiescent current, and wide dynamic
range make the op amps well-suited for driving sampling analog-to-digital converters (ADCs) as well as other
single-supply applications.
8.2 Functional Block Diagram
V+
Reference
Current
VIN+
VIN–
VBIAS1
Class AB
Control
Circuitry
VO
VBIAS2
V–
(Ground)
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8.3 Feature Description
8.3.1 Operating Voltage
The TLV313 series is fully specified and tested from 1.8 V to 5.5 V (±0.9 V to ±2.75 V). Parameters that vary with
supply voltage are illustrated in the Typical Characteristics section.
8.3.2 Rail-to-Rail Input
The input common-mode voltage range of the TLV313 series extends 200 mV beyond the supply rails. This
performance is achieved with a complementary input stage: an N-channel input differential pair in parallel with a
P-channel differential pair, as shown in the Functional Block Diagram section. The N-channel pair is active for
input voltages close to the positive rail, typically (V+) – 1.3 V to 200 mV above the positive supply, while the Pchannel pair is on for inputs from 200 mV below the negative supply to approximately (V+) – 1.3 V. There is a
small transition region, typically (V+) – 1.4 V to (V+) – 1.2 V, in which both pairs are on. This 200-mV transition
region may vary up to 300 mV with process variation. Thus, the transition region (both stages on) may range
from (V+) – 1.7 V to (V+) – 1.5 V on the low end, up to (V+) – 1.1 V to (V+) – 0.9 V on the high end. Within this
transition region, PSRR, CMRR, offset voltage, offset drift, and THD may be degraded compared to device
operation outside this region.
8.3.3 Rail-to-Rail Output
Designed as a micro-power, low-noise operational amplifier, the TLV313 device delivers a robust output drive
capability. A class AB output stage with common-source transistors is used to achieve full rail-to-rail output swing
capability. For resistive loads up to 100 kΩ, the output swings typically to within 5 mV of either supply rail
regardless of the power-supply voltage applied. Different load conditions change the ability of the amplifier to
swing close to the rails, as shown in Figure 12.
8.3.4 Common-Mode Rejection Ratio (CMRR)
CMRR for the TLV313 device is specified in several ways so the best match for a given application may be used;
see the Electrical Characteristics. First, the CMRR of the device in the common-mode range below the transition
region [VCM < (V+) – 1.3 V] is given. This specification is the best indicator of the capability of the device when
the application requires use of one of the differential input pairs. Second, the CMRR over the entire commonmode range is specified at (VCM = –0.2 V to 5.7 V). This last value includes the variations seen through the
transition region, as shown in Figure 4.
8.3.5 Capacitive Load and Stability
The TLV313 device is designed to be used in applications where driving a capacitive load is required. As with all
op amps, there may be specific instances where the TLV313 device may become unstable. The particular op
amp circuit configuration, layout, gain, and output loading are some of the factors to consider when establishing
whether or not an amplifier is stable in operation. An op amp in the unity-gain (+1-V/V) buffer configuration that
drives a capacitive load exhibits a greater tendency to be unstable than an amplifier operated at a higher noise
gain. The capacitive load, in conjunction with the op amp output resistance, creates a pole within the feedback
loop that degrades the phase margin. The degradation of the phase margin increases as the capacitive loading
increases. When operating in the unity-gain configuration, the TLV313 device remains stable with a pure
capacitive load up to approximately 1 nF. The equivalent series resistance (ESR) of some capacitors (CL greater
than 1 μF) is sufficient to alter the phase characteristics in the feedback loop such that the amplifier remains
stable. Increasing the amplifier closed-loop gain allows the amplifier to drive increasingly larger capacitance. This
increased capability is evident when observing the overshoot response of the amplifier at higher voltage gains.
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Feature Description (continued)
One technique for increasing the capacitive load drive capability of the amplifier when it operates in a unity-gain
configuration is to insert a small resistor, typically 10 Ω to 20 Ω, in series with the output, as shown in Figure 19.
This resistor significantly reduces the overshoot and ringing associated with large capacitive loads. One possible
problem with this technique is that a voltage divider is created with the added series resistor and any resistor
connected in parallel with the capacitive load. The voltage divider introduces a gain error at the output that
reduces the output swing.
V+
RS
VOUT
Device
10 W to
20 W
VIN
RL
CL
Figure 19. Improving Capacitive Load Drive
8.3.6 EMI Susceptibility and Input Filtering
Operational amplifiers vary with regard to the susceptibility of the device to electromagnetic interference (EMI). If
conducted EMI enters the op amp, the dc offset observed at the amplifier output may shift from the nominal value
while EMI is present. This shift is a result of signal rectification associated with the internal semiconductor
junctions. While all op amp pin functions may be affected by EMI, the signal input pins are likely to be the most
susceptible. The TLV313 family incorporates an internal input low-pass filter that reduces the amplifiers response
to EMI. Both common-mode and differential mode filtering are provided by this filter. The filter is designed for a
cutoff frequency of approximately 35 MHz (–3 dB), with a roll-off of 20 dB per decade.
Texas Instruments has developed the ability to accurately measure and quantify the immunity of an operational
amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz. The EMI rejection ratio (EMIRR)
metric allows op amps to be directly compared by the EMI immunity. Figure 18 illustrates the results of this
testing on the TLV313 family. Detailed information may be found in EMI Rejection Ratio of Operational Amplifiers
(SBOA128), available for download from www.ti.com.
8.4 Device Functional Modes
The TLV313 devices have a single functional mode. The devices are powered on as long as the power-supply
voltage is between 1.8 V (±0.9 V) and 5.5 V (±2.75 V).
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TLVx313 devices are a family of low-power, rail-to-rail input and output operational amplifiers specifically
designed for portable applications. The devices operate from 1.8 V to 5.5 V, are unity-gain stable, and are
suitable for a wide range of general-purpose applications. The class AB output stage is capable of driving ≤ 10kΩ loads connected to any point between V+ and ground. The input common-mode voltage range includes both
rails, and allows the TLV313 family to be used in virtually any single-supply application.
9.2 Typical Application
A typical application for an operational amplifier is an inverting amplifier, as shown in Figure 20. An inverting
amplifier takes a positive voltage on the input and outputs a signal inverted to the input, making a negative
voltage of the same magnitude. In the same manner, the amplifier also makes negative input voltages positive on
the output. In addition, amplification may be added by selecting the input resistor RI and the feedback resistor RF.
RF
VSUP+
RI
VOUT
+
VIN
VSUP±
Copyright © 2016, Texas Instruments Incorporated
Figure 20. Application Schematic
9.2.1 Design Requirements
The supply voltage must be chosen to be larger than the input voltage range and the desired output range. The
limits of the input common-mode range (VCM) and the output voltage swing to the rails (VO) must also be
considered. For instance, this application scales a signal of ±0.5 V (1 V) to ±1.8 V (3.6 V). Setting the supply at
±2.5 V is sufficient to accommodate this application.
9.2.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier using Equation 1 and Equation 2:
VOUT
AV
VIN
AV
1.8
0.5
3.6
(1)
(2)
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Typical Application (continued)
When the desired gain is determined, choose a value for RI or RF. Choosing a value in the kilohm range is
desirable for general-purpose applications because the amplifier circuit uses currents in the milliamp range. This
milliamp current range ensures the device does not draw too much current. The trade-off is that very large
resistors (100s of kilohms) draw the smallest current but generate the highest noise. Small resistors (100s of
ohms) generate low noise but draw high current. This example uses 10 kΩ for RI, meaning 36 kΩ is used for RF.
The values are determined by Equation 3:
RF
AV
RI
(3)
9.2.3 Application Curve
2
Input
Output
1.5
Voltage (V)
1
0.5
0
-0.5
-1
-1.5
-2
Time
Figure 21. Inverting Amplifier Input and Output
9.3 System Examples
When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is often required.
The simplest way to establish this limited bandwidth is to place an RC filter at the noninverting terminal of the
amplifier, as shown in Figure 22.
RG
RF
R1
VOUT
VIN
C1
f-3 dB =
(
RF
VOUT
= 1+
RG
VIN
((
1
1 + sR1C1
1
2pR1C1
(
Figure 22. Single-Pole Low-Pass Filter
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System Examples (continued)
If even more attenuation is needed, a multiple pole filter is required. The Sallen-Key filter may be used for this
task, as shown in Figure 23. For best results, the amplifier must have a bandwidth that is eight to 10 times the
filter frequency bandwidth. Failure to follow this guideline may result in phase shift of the amplifier.
C1
R1
R1 = R2 = R
C1 = C2 = C
Q = Peaking factor
(Butterworth Q = 0.707)
R2
VIN
VOUT
C2
1
2pRC
f-3 dB =
RF
RF
RG =
RG
(
2-
1
Q
(
Figure 23. Two-Pole, Low-Pass, Sallen-Key Filter
10 Power Supply Recommendations
The TLVx313 family is specified for operation from 1.8 V to 5.5 V (±0.9 V to ±2.75 V); many specifications apply
from –40°C to +125°C. The Typical Characteristics section presents parameters that may exhibit significant
variance with regard to operating voltage or temperature.
CAUTION
Supply voltages larger than 7 V can permanently damage the device (see the Absolute
Maximum Ratings table).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout
Guidelines section.
10.1 Input and ESD Protection
The TLV313 family incorporates internal electrostatic discharge (ESD) protection circuits on all pins. In the case
of input and output pins, this protection primarily consists of current-steering diodes connected between the input
and power-supply pins. The ESD protection diodes also provide in-circuit, input overdrive protection, as long as
the current is limited to 10 mA as stated in the Absolute Maximum Ratings. Figure 24 shows how a series input
resistor may be added to the driven input to limit the input current. The added resistor contributes thermal noise
at the amplifier input and the value must be kept to a minimum in noise-sensitive applications.
V+
IOVERLOAD
10-mA max
Device
VOUT
VIN
5 kW
Figure 24. Input Current Protection
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11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:
• Noise may propagate into analog circuitry through the power pins of the circuit and the operational
amplifier. Use bypass capacitors to reduce the coupled noise by providing low-impedance power sources
local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of the circuitry is one of the simplest and most
effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to
ground planes. A ground plane helps distribute heat and reduces EMI noise pickup. Take care to
physically separate digital and analog grounds, paying attention to the flow of the ground current. For
more detailed information, refer to Circuit Board Layout Techniques, (SLOA089).
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If the traces cannot be kept separate, crossing the sensitive trace perpendicularly is much better
than crossing in parallel with the noisy trace.
• Place the external components as close to the device as possible. Keep RF and RG close to the inverting
input in order to minimize parasitic capacitance, as shown in Figure 25.
• Keep the length of input traces as short as possible. Remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring may significantly
reduce leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
Run the input traces
as far away from
the supply lines
VIN
as possible.
VS+
VS±
+IN
V+
Use a low-ESR,
ceramic bypass
capacitor.
V±
Use a low-ESR,
ceramic bypass
capacitor.
GND
RG
OUT
±IN
VOUT
GND
RF
Place components
close to the device
and to each other to
reduce parasitic
errors.
Copyright © 2016, Texas Instruments Incorporated
Figure 25. Operational Amplifier Board Layout for Noninverting Configuration
+
VIN
VOUT
RG
RF
Figure 26. Schematic Representation of Figure 25
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• EMI Rejection Ratio of Operational Amplifiers.
• Circuit Board Layout Techniques.
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Related Links
Table 2 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TLV313
Click here
Click here
Click here
Click here
Click here
TLV2313
Click here
Click here
Click here
Click here
Click here
TLV4313
Click here
Click here
Click here
Click here
Click here
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
20-Feb-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TLV2313IDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
13AV
TLV2313IDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
13AV
TLV2313IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
V2313
TLV313IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
15F2
TLV313IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
15F2
TLV313IDCKR
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
14E
TLV313IDCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
14E
TLV4313IPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV4313
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
20-Feb-2017
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Feb-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
TLV2313IDGKR
VSSOP
DGK
8
TLV2313IDGKT
VSSOP
DGK
TLV2313IDR
SOIC
D
TLV313IDBVR
SOT-23
TLV313IDBVT
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
DBV
5
3000
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
SOT-23
DBV
5
250
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
TLV313IDCKR
SC70
DCK
5
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
TLV313IDCKT
SC70
DCK
5
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
TLV4313IPWR
TSSOP
PW
14
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Feb-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TLV2313IDGKR
VSSOP
DGK
8
2500
366.0
364.0
50.0
TLV2313IDGKT
VSSOP
DGK
8
250
366.0
364.0
50.0
TLV2313IDR
SOIC
D
8
2500
340.5
338.1
20.6
TLV313IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV313IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV313IDCKR
SC70
DCK
5
3000
180.0
180.0
18.0
TLV313IDCKT
SC70
DCK
5
250
180.0
180.0
18.0
TLV4313IPWR
TSSOP
PW
14
2000
367.0
367.0
35.0
Pack Materials-Page 2
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Mouser Electronics
Authorized Distributor
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TLV2313IDGKT TLV2313IDGKR TLV2313IDR
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