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Memory Module Specifications
8GB (4GB 512M x 72-Bit x 2 pcs.) PC3-8500
CL7 Registered w/Parity 240-Pin ECC DIMM
ValueRAM’s KVR1066D3D8R7SK2/8G is a kit of two 512M x
CL(IDD) 7 cycles
Row Cycle Time (tRCmin) 50.625ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
160ns (min.)
Row Active Time (tRASmin) 37.5ns (min.)
Power 3.195 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0° C to 85° C
• JEDEC standard 1.5V ± 0.075V Power Supply
Storage Temperature -55° C to +100° C
72-bit (4GB) DDR3-1066 CL7 SDRAM (Synchronous DRAM)
registered w/parity, dual-rank ECC memory modules, based
on eighteen 256M x 8-bit DDR3-1066 FBGA components per
module. Total kit capacity is 8GB. The SPDs are programmed to
JEDEC standard latency 1066Mhz timing of 7-7-7 at 1.5V. Each
240-pin DIMM uses gold contact fingers and requires +1.5V.
The electrical and mechanical specifications are as follows:
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
Continued >>
Document No. VALUERAM0928-001.A00
08/11/10 Page 1
(units = millimeters)
Document No. VALUERAM0928-001.A00
08/11/10 Page 2
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