Application Brief
3
Electronics
3M™ Diamond Pad Conditioner E187
for Ebara CMP Polishing Tool
3M™ Diamond Pad Conditioners have been developed
specifically for Ebara CMP polishing tools. These conditioners
are manufactured using 3M’s patented sintering technology that
provides for control of diamond placement, diamond exposure
height and conditioner front-side flatness. 3M’s diamond pad
conditioner product offerings for Ebara tools have been tailored to
meet a variety of specific process challenges, including reduced
pad wear rates. Pad conditioning products are available for all
200mm and 300mm oxide and metal CMP applications.
The patented Diamond Free Exclusion Zone provides a diamond
free zone on the outer perimeter of each pad conditioner. Exclusion
zone reduces the possibility of diamonds coming loose due to poor
anchoring and higher exposure to unit pressures. The controlled
diamond placement, resulting in a visible diamond grid pattern
and exclusion zone can be seen in the photograph of the 3M™
Diamond Pad Conditioner in Figure 2.
What makes 3M Diamond Pad
Conditioners Unique?
Designed for process consistency and wafer quality
•P
atterned diamond array for consistent pad wear and
debris removal
•C
ontrolled diamond spacing and protrusion for excellent
pad planarity
• E xcellent retention properties help reduce macro scratching
3M diamond pad conditioners utilize a proprietary process that
allows for the controlled placement and spacing of diamonds in
a specially formulated metal matrix. The net result is reduced
process variability and longer conditioner life, which provides
the opportunity to reduce overall CMP system cost of ownership.
The proprietary nickel alloy metal matrix and sintering process
is designed to resist corrosion and maximize the diamond-tosubstrate bond (see Figure 1).
3M Sintered Abrasive Technology
Mechanical &
chemical bond
Special metal
matrix
Downforce
Slurry
Chemistry
High quality diamond
Many cutting points
Controlled protrusion
Figure 1: The science of high diamond retention.
✓ Metal matrix intact
✓Diamond retained
✓Cutting life extended
Figure 2: Controlled diamond placement results in a visible diamond grid
pattern and exclusion zone.
3M™ Diamond Pad Conditioner E187
for Ebara CMP Polishing Tool
Product Recommendation
Tungsten CMP Removal Rate and Within Wafer
Non-Uniformity
The 3M™ Diamond Pad Conditioner E187 is designed for use
on all Ebara EPO and F-Rex 200 mm and 300 mm tool platforms.
Table 1 shows the typical dressing process conditions for use with
the E187 pad conditioner.
Pre-dressing
Recipe
Process (sec)
15-20
2
T.T. Rotation (min-1)
40-80
9
D.R. Rotation (min-1)
20-40
95.0
200-300
200-300
D.R. Load (N)
5000
Table 1: Typical Dressing Process Window
30
Tungsten RR (Å/min)
4500
Process Performance
This application brief describes the use of E187 pad conditioners
for 200mm tungsten and oxide CMP applications. Table 2 is a
summary of the E187 pad conditioner process performance.
The data shows expected removal rate (RR) and within wafer
non-uniformity (WIWNU) performance along with pad wear
rates and the expected conditioning life. Excellent performance
is obtained for both processes while still maintaining a low pad
wear rate. The much lower pad wear rates allow for an increase
in pad life as compared to more aggressive competitor products.
Longer pad life is one factor that contributes to lower cost
of ownership.
Tungsten CMP
Conditioner
Pad
Slurry
Dresser Force (N)
RR
NU
Pad Wear
Conditioner Life
E187
E187
IC1000 KGRV/SIV
Cabot Semi - Sperse®
W2000 (1:1) 3% H2O2
Cabot Semi - Sperse® 12
300
200
3700 ± 350
3400 ± 300
< 6%
<4%
0.10 mm/h
0.14 mm/h
40 hours ex-situ
80 hours ex - situ
3500
20
3000
2500
E187 RR
15
E187 NU
2000
10
1500
1000
5
500
0
0
500
1000
1500
2000
Wafer Number
2500
0
3000
Figure 3: 3000 wafer run showing Tungsten CMP Removal Rate and
WIWNU. DF = 300N, TT/DR (Turntable speed/Dresser rate,
both in cycles per minute)= 50/34, 20s ex-situ.
Oxide CMP
IC1000 P-style/SIV
25
4000
Table 2: S
ummary of 3M™ Diamond Pad Conditioner E187
process performance.
2
WIWNU (%)
Manufacturing
Recipe
A 3000 tungsten wafer marathon run was performed on an EPO –
112 polishing tool equipped with a standard polishing head. Cabot
W2000® slurry diluted 1:1 with 3.0% hydrogen peroxide was
used on an IC1000 perforated pad. The wafers were measured
using 49-point diameter scans on a CDE ResMap using 5mm
edge exclusion. The results show stable removal rates (RR) and
within wafer non-uniformity performance (Fig. 3). The conditioner
was used for 17 hours during the marathon run. Post analysis of
the conditioner after the marathon indicated that the conditioner
still had significant conditioning life remaining.
Oxide CMP Removal Rate and Within Wafer
Non-Uniformity
Pad Wear Performance using the
3M™ Diamond Pad Conditioner E187
The 3M™ Diamond Pad Conditioner E187 product performance
was also tested in an oxide CMP polishing process. A 400 wafer
marathon run was conducted using IC1000 K-groove pads with
Cabot SemiSperse® 12 oxide slurry. The PeTeos wafers were
measured using 81-point diameter scans on a KLA Tencor®
UV1050 with 3mm edge exclusion. The data show stable RR with
a slight increase over time and excellent WIWNU throughout the
run (Fig.4). Dressing conditions were not optimized for this run.
Pad wear performance was measured at varying dressing
conditions in DI water (Fig 6 ). One E187 and one pad
conditioner each from competitors A and B were used on the
same type pad at the same conditions of 200 N of down force,
turn table speed (TT) and dresser rate (DR). The E187 was also
run at conditions of greater down force and faster TT and DR.
The results show low pad wear rates for E187 versus competitors
A and B under the same conditions.
10.00
0.35
0.3
3000
2400
1800
6.00
Removal Rate (Å/min)
WIWNU (%)
4.00
1200
0.15
0.1
0 20 40 60 80 100 120 140 160180 200 220 240260 280 300 320 340 360 380 400
20/16
E187
50/34
20/16
20/16
Competitor Competitor
B
A
Figure 6: Pad Wear performance of 3M Diamond Pad Conditioner E187.
Typical Physical Properties
Oxide Planarization Performance
600
500
Properties
3M™ Diamond Pad Conditioner E187
Diamond Size
180 µm
Pattern
Controlled placement
Carrier Material
304 stainless steel
Segment Base Material
Inconel 625
BL Aggressiveness*
75-95
Flatness (mm)
≤ .0025
Surface
Smooth sintered
Acid Resistance
Excellent
Platform
200mm and 300mm
*Proprietary 3M test method.
400
300
200
100
Competitor A
40/27
Conditioner Type and TT/DR (min-1)
Planarization performance on SKW7 – two pattern wafers
were tested comparing the E187 pad conditioner to two
competitor products (Fig. 5). The data was collected using Cabot
SemiSperse® 12 oxide slurry on IC1000 K-groove pads. The E187
pad conditioner had excellent results on 50/50 features with an
average step height of less than 150 µm as compared to 230 µm
for Competitor A and 426 µm for competitor B.
E187
400N
0.2
0.00
Figure 4: 4 00 wafer run showing oxide RR and WIWNU on IC1000 pads
in Cabot SemiSperse® 12 slurry, 200N, TT/DR = 50/40, 20s
ex – situ.
0
300N
0.25
0
Wafer
Average Step Height (Å)
200N
0.05
2.00
600
0
Pad Wear (mm/h)
8.00
WIWNU (%)
Removal Rate(Å/min)
3600
Competitor B
Figure 5: Summary of Step Height Measurements on 200mm SKW-7-2
pattern wafers, Cabot® SS12 slurry, IC 1000-A6, .080",
K7/SIV, 200N, TT/DR = 50/40
3
3M™ Diamond Pad Conditioner E187
for Ebara CMP Polishing Tool
World Wide Process Support
and Technical Service
3M offers assistance to customers in developing and qualifying
new processes for a wide range of applications including CMP,
cleaning etching and drying, CVD chamber cleaning, and heat
transfer fluids for thermal management in CVD, etch, lithography
and test equipment. The specialists are backed by 3M application
development centers located near fab sites in countries around
the world.
Contact Information, Technical
Hotline, Sales Contacts, Website
For more information about the semiconductor process
development service or 3M Electronic Markets Materials Division,
call 1-800-251-8634 or visit www.3M.com/electronics
United States
3M Performance
Materials Division
800 541 6752
Brazil
3M do Brasil Ltda.
5519 3838 7000
Europe
3M Belgium N.V.
32 3 250 7521
China
3M Hong Kong Limited
852 2806 6111
Japan
Sumitomo 3M Limited
813 3709 8250
Malaysia
3M Malaysia Sdn. Berhad
60 3 706 2888
India
3M India Limited
Bangalore
9080 2231414
Taiwan
3M Taiwan Limited
886 2 2704 9011
Philippines
3M Philippines, Inc.
63 2 813 3781
New Zealand
3M New Zealand Ltd.
64-9-444-4760
Other Areas
651 736 7123 (U.S.)
Korea
Singapore
Australia
Canada
China
3M Korea Limited
3M Singapore Pte. Ltd.
3M Australia Pty., Ltd.
3M Canada Company
3M China Ltd.
82 2 3771 4114
65 454 8611
61 2 9498 9333
800 364 3577
86 21 6275 3535
Product Use: All statements, technical information and recommendations contained in this document are based on tests or experience that 3M believes are reliable. However, many factors
beyond 3M’s control can affect the use and performance of a 3M product in a particular application, including conditions under which the product is used and the time and environmental
conditions in which the product is expected to perform. Since these factors are uniquely within the user’s knowledge and control, it is essential that the user evaluate the 3M product to
determine whether it is fit for a particular purpose and suitable for the user’s method of application.
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meets the applicable specifications at the time 3M ships the product. Individual products may have additional or different warranties as stated on product literature, package inserts or
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warranty arising out of a course of dealing, custom or usage of trade. User is responsible for determining whether the 3M product is fit for a particular purpose and suitable for user’s
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refund the purchase price.
Limitation of Liability: Except where prohibited by law, 3M will not be liable for any loss or damage arising from the 3M product, whether direct, indirect, special, incidental, or
consequential regardless of the legal theory asserted, including warranty, contract, negligence or strict liability.
3
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