Application Brief 3 Electronics 3M™ Diamond Pad Conditioner E187 for Ebara CMP Polishing Tool 3M™ Diamond Pad Conditioners have been developed specifically for Ebara CMP polishing tools. These conditioners are manufactured using 3M’s patented sintering technology that provides for control of diamond placement, diamond exposure height and conditioner front-side flatness. 3M’s diamond pad conditioner product offerings for Ebara tools have been tailored to meet a variety of specific process challenges, including reduced pad wear rates. Pad conditioning products are available for all 200mm and 300mm oxide and metal CMP applications. The patented Diamond Free Exclusion Zone provides a diamond free zone on the outer perimeter of each pad conditioner. Exclusion zone reduces the possibility of diamonds coming loose due to poor anchoring and higher exposure to unit pressures. The controlled diamond placement, resulting in a visible diamond grid pattern and exclusion zone can be seen in the photograph of the 3M™ Diamond Pad Conditioner in Figure 2. What makes 3M Diamond Pad Conditioners Unique? Designed for process consistency and wafer quality •P atterned diamond array for consistent pad wear and debris removal •C ontrolled diamond spacing and protrusion for excellent pad planarity • E xcellent retention properties help reduce macro scratching 3M diamond pad conditioners utilize a proprietary process that allows for the controlled placement and spacing of diamonds in a specially formulated metal matrix. The net result is reduced process variability and longer conditioner life, which provides the opportunity to reduce overall CMP system cost of ownership. The proprietary nickel alloy metal matrix and sintering process is designed to resist corrosion and maximize the diamond-tosubstrate bond (see Figure 1). 3M Sintered Abrasive Technology Mechanical & chemical bond Special metal matrix Downforce Slurry Chemistry High quality diamond Many cutting points Controlled protrusion Figure 1: The science of high diamond retention. ✓ Metal matrix intact ✓Diamond retained ✓Cutting life extended Figure 2: Controlled diamond placement results in a visible diamond grid pattern and exclusion zone. 3M™ Diamond Pad Conditioner E187 for Ebara CMP Polishing Tool Product Recommendation Tungsten CMP Removal Rate and Within Wafer Non-Uniformity The 3M™ Diamond Pad Conditioner E187 is designed for use on all Ebara EPO and F-Rex 200 mm and 300 mm tool platforms. Table 1 shows the typical dressing process conditions for use with the E187 pad conditioner. Pre-dressing Recipe Process (sec) 15-20 2 T.T. Rotation (min-1) 40-80 9 D.R. Rotation (min-1) 20-40 95.0 200-300 200-300 D.R. Load (N) 5000 Table 1: Typical Dressing Process Window 30 Tungsten RR (Å/min) 4500 Process Performance This application brief describes the use of E187 pad conditioners for 200mm tungsten and oxide CMP applications. Table 2 is a summary of the E187 pad conditioner process performance. The data shows expected removal rate (RR) and within wafer non-uniformity (WIWNU) performance along with pad wear rates and the expected conditioning life. Excellent performance is obtained for both processes while still maintaining a low pad wear rate. The much lower pad wear rates allow for an increase in pad life as compared to more aggressive competitor products. Longer pad life is one factor that contributes to lower cost of ownership. Tungsten CMP Conditioner Pad Slurry Dresser Force (N) RR NU Pad Wear Conditioner Life E187 E187 IC1000 KGRV/SIV Cabot Semi - Sperse® W2000 (1:1) 3% H2O2 Cabot Semi - Sperse® 12 300 200 3700 ± 350 3400 ± 300 < 6% <4% 0.10 mm/h 0.14 mm/h 40 hours ex-situ 80 hours ex - situ 3500 20 3000 2500 E187 RR 15 E187 NU 2000 10 1500 1000 5 500 0 0 500 1000 1500 2000 Wafer Number 2500 0 3000 Figure 3: 3000 wafer run showing Tungsten CMP Removal Rate and WIWNU. DF = 300N, TT/DR (Turntable speed/Dresser rate, both in cycles per minute)= 50/34, 20s ex-situ. Oxide CMP IC1000 P-style/SIV 25 4000 Table 2: S ummary of 3M™ Diamond Pad Conditioner E187 process performance. 2 WIWNU (%) Manufacturing Recipe A 3000 tungsten wafer marathon run was performed on an EPO – 112 polishing tool equipped with a standard polishing head. Cabot W2000® slurry diluted 1:1 with 3.0% hydrogen peroxide was used on an IC1000 perforated pad. The wafers were measured using 49-point diameter scans on a CDE ResMap using 5mm edge exclusion. The results show stable removal rates (RR) and within wafer non-uniformity performance (Fig. 3). The conditioner was used for 17 hours during the marathon run. Post analysis of the conditioner after the marathon indicated that the conditioner still had significant conditioning life remaining. Oxide CMP Removal Rate and Within Wafer Non-Uniformity Pad Wear Performance using the 3M™ Diamond Pad Conditioner E187 The 3M™ Diamond Pad Conditioner E187 product performance was also tested in an oxide CMP polishing process. A 400 wafer marathon run was conducted using IC1000 K-groove pads with Cabot SemiSperse® 12 oxide slurry. The PeTeos wafers were measured using 81-point diameter scans on a KLA Tencor® UV1050 with 3mm edge exclusion. The data show stable RR with a slight increase over time and excellent WIWNU throughout the run (Fig.4). Dressing conditions were not optimized for this run. Pad wear performance was measured at varying dressing conditions in DI water (Fig 6 ). One E187 and one pad conditioner each from competitors A and B were used on the same type pad at the same conditions of 200 N of down force, turn table speed (TT) and dresser rate (DR). The E187 was also run at conditions of greater down force and faster TT and DR. The results show low pad wear rates for E187 versus competitors A and B under the same conditions. 10.00 0.35 0.3 3000 2400 1800 6.00 Removal Rate (Å/min) WIWNU (%) 4.00 1200 0.15 0.1 0 20 40 60 80 100 120 140 160180 200 220 240260 280 300 320 340 360 380 400 20/16 E187 50/34 20/16 20/16 Competitor Competitor B A Figure 6: Pad Wear performance of 3M Diamond Pad Conditioner E187. Typical Physical Properties Oxide Planarization Performance 600 500 Properties 3M™ Diamond Pad Conditioner E187 Diamond Size 180 µm Pattern Controlled placement Carrier Material 304 stainless steel Segment Base Material Inconel 625 BL Aggressiveness* 75-95 Flatness (mm) ≤ .0025 Surface Smooth sintered Acid Resistance Excellent Platform 200mm and 300mm *Proprietary 3M test method. 400 300 200 100 Competitor A 40/27 Conditioner Type and TT/DR (min-1) Planarization performance on SKW7 – two pattern wafers were tested comparing the E187 pad conditioner to two competitor products (Fig. 5). The data was collected using Cabot SemiSperse® 12 oxide slurry on IC1000 K-groove pads. The E187 pad conditioner had excellent results on 50/50 features with an average step height of less than 150 µm as compared to 230 µm for Competitor A and 426 µm for competitor B. E187 400N 0.2 0.00 Figure 4: 4 00 wafer run showing oxide RR and WIWNU on IC1000 pads in Cabot SemiSperse® 12 slurry, 200N, TT/DR = 50/40, 20s ex – situ. 0 300N 0.25 0 Wafer Average Step Height (Å) 200N 0.05 2.00 600 0 Pad Wear (mm/h) 8.00 WIWNU (%) Removal Rate(Å/min) 3600 Competitor B Figure 5: Summary of Step Height Measurements on 200mm SKW-7-2 pattern wafers, Cabot® SS12 slurry, IC 1000-A6, .080", K7/SIV, 200N, TT/DR = 50/40 3 3M™ Diamond Pad Conditioner E187 for Ebara CMP Polishing Tool World Wide Process Support and Technical Service 3M offers assistance to customers in developing and qualifying new processes for a wide range of applications including CMP, cleaning etching and drying, CVD chamber cleaning, and heat transfer fluids for thermal management in CVD, etch, lithography and test equipment. The specialists are backed by 3M application development centers located near fab sites in countries around the world. 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