SKY66289-11: 750 to 850 MHz High-Efficiency 4 W

DATA SHEET
SKY66289-11: 750 to 850 MHz High-Efficiency 4 W Power
Amplifier
Applications
VCC1 VBIAS PAEN VCC3
 FDD and TDD 2G/3G/4G LTE systems
 3GPP Bands 20, 28, and 68 small-cell base stations
 Driver amplifier for micro-base and macro-base stations
 Active antenna array and massive MIMO
Active Bias
RFIN
Input
Match
Stage 1
PA
Stage2
PA
Output
Match
Features
RFOUT
203648-001
 High efficiency: PAE = 35.5% @ +28 dBm
 High linearity: +28 dBm with < 50 dBc linearized ACLR
(20 MHz LTE, 8.5 dB PAR signal)
 High gain: 36.5 dB
 Excellent input and output return loss: to 50  system
 Integrated active bias: performance compensated over temp
 Integrated enable On/Off function: PAEN = 1.7 to 2.5 V
 Single supply voltage: 5.0 V
 Pin-to-pin compatible PA family supporting all 3GPP bands
 Compact (16-pin, 5  5  1.3 mm) package
(MSL3, 260 C per JEDEC J-STD-020)
Skyworks GreenTM products are compliant with
all applicable legislation and are halogen-free.
For additional information, refer to Skyworks
Definition of GreenTM, document number
SQ04–0074.
Figure 1. SKY66289-11 Block Diagram
Description
The SKY66289-11 is a high-efficiency fully input/output matched
power amplifier (PA) with high gain and linearity. The compact
5  5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small
cell base stations operating in two frequency ranges: 791 to 821
and 750 to 850 MHz. The active biasing circuitry is integrated to
compensate PA performance over temperature, voltage, and
process variation.
The SKY66289-11 is part of high efficiency, pin-to-pin compatible
PA family supporting all 3GPP bands.
A block diagram of the SKY66289-11 is shown in Figure 1. The
device package and pinout for the 16-pin device are shown in
Figure 2. Table 1 lists the pin-to-pin compatible parts in the PA
family. Signal pin assignments and functional pin descriptions are
described in Table 2.
Table 1. Pin-to-Pin Compatible PA Family
Part Number
Frequency (MHz)
3GPP Band
SKY66296-11
700 to 800
Bands 12, 13, 14, 17, 29, and 44
SKY66289-11
750 to 850
Bands 20, 28, and 68
SKY66295-11
800 to 900
Bands 5, 18, 19, 26 and 27
SKY66298-11
900 to 990
Band 8
SKY66291-11
1805 to 1880
Bands 3 and 9
SKY66299-11
1900 to 2000
Bands 2, 25, 33, 36, and 37
SKY66294-11
2000 to 2300
Bands 1, 4, 10, and 23
SKY66292-11
2300 to 2400
Bands 30 and 40
SKY66297-11
2490 to 2690
Bands 7, 38, and 41
SKY66293-21
3400 to 3800
CBRS, Bands 22, 42, 43, and 48
SKY66288-11
5150 to 5925
Band 46, LAA/LTE-U
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1
VCC1
GND
N/U
GND
DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
16
15
14
13
RFIN 2
11
GND
GND 3
10
GND
GND 4
9
RFOUT
5
VBIAS
6
7
8
GND
VCC3
GND
12
PAEN
GND 1
203648-002
Figure 2. SKY66289-11 Pinout
(Top View)
Table 2. SKY66289-11 Signal Descriptions1
Pin
Name
Description
Pin
Name
Description
1
GND
Ground
9
RFOUT
RF output port
2
RFIN
RF input port
10
GND
Ground
3
GND
Ground
11
GND
Ground
4
GND
Ground
12
VCC3
Stage 3 collector voltage
5
VBIAS
Bias voltage
13
GND
Ground
6
PAEN
PA enable
14
N/U
Not used
7
GND
Ground
15
GND
Ground
8
GND
Ground
16
VCC1
Stage 1 collector voltage
1 The center ground pad must have a low inductance and low thermal resistance connection to the application’s printed circuit board ground plane.
Technical Description
Electrical and Mechanical Specifications
The matching circuits are contained within the device. An on-chip
active bias circuit is included within the device for both input and
output stages, which provides excellent gain tracking over
temperature and voltage variations.
The absolute maximum ratings of the SKY66289-11 are provided
in Table 3. Recommended operating conditions are specified in
Table 4 and electrical specifications are provided in Tables 5
and 6.
The SKY66289-11 is internally matched for maximum output
power and efficiency. The input and output stages are
independently supplied using the VCC1 and VCC3 supply lines
(pins 16 and 12, respectively). The DC control voltage that sets
the bias is supplied by the VBIAS signal (pin 5).
Typical performance characteristics are shown in Figures 3
through 19.
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Table 3. SKY66289-11 Absolute Maximum Ratings1
Parameter
Symbol
Minimum
Maximum
Units
RF input power (CW) @ 50 Ω load
PIN
+10
dBm
Supply voltage (VCC1, VCC3, VBIAS)
VCC
5.5
V
PA enable
VEN
3
V
Operating temperature
TC
-40
+100
C
Storage temperature
TSTG
-55
+125
C
Junction temperature
TJ
+150
C
Power dissipation
PD
1.5
W
Device thermal resistance
JC
27.5
C/W
500
1000
V
V
Electrostatic discharge:
Charged Device Model (CDM)
Human Body Model (HBM)
1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters
set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device.
This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce
potentials of several kilovolts on the human body or equipment, which can discharge without detection.
Industry-standard ESD handling precautions should be used at all times.
Table 4. SKY66289-11 Recommended Operating Conditions
Symbol
Min
Typ
Max
Units
Supply voltage (VCC1, VCC3, VBIAS)
Parameter
VCC1, VCC3, VBIAS
4.75
5
5.25
V
PA enable:
PAEN
1.7
2.0
0
2.5
0.5
V
V
1
12
A
821
MHz
+85
C
ON
OFF
PA enable current
IEN
Operating frequency
f
753
Operating temperature
TC
-40
+25
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Table 5. SKY66289-11 Electrical Specifications1
(VCC1 = VCC3 = VBIAS = 5 V, PAEN = 2.0 V, f = 806 MHz, TC = +25 C, Input/Output Load = 50 , Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
791
Max
Units
821
MHz
Frequency
f
Small signal gain
|S21|
PIN = 30 dBm
34
36.1
dB
Gain @ +28 dBm
|S21|@+28 dBm
CW, POUT=+28dBm
35
36.5
dB
Input return loss
|S11|
PIN = 20 dBm
12
18
dB
Output return loss
|S22|
PIN = 20 dBm
10
15
dB
Reverse isolation2
|S12|
PIN = 30 dBm
ACLR @ +28 dBm
ACLR
POUT = +28 dBm (20 MHz LTE, 8.5 dB PAR signal)
Output power@ PIN = +5 dBm
55
POUT@+5 dBm PIN
CW, PIN = +5 dBm
Output power @ 3dB gain compression3
P3dB
CW, reference to small signal gain
2nd harmonic
2fO
CW, POUT = +28 dBm
3 harmonic
3fO
CW, POUT = +28 dBm
Power-added efficiency
PAE
CW, POUT = +28 dBm
Quiescent current
ICCQ
No RF signal
rd
-32.5
+35.2
+36
+34
+35
32.5
dB
–30
dBc
dBm
dBm
-40
–34
dBc
-70
–64
dBc
35.5
70
%
105
mA
Max
Units
803
MHz
1 Performance is guaranteed only under the conditions listed in this table.
2 Not tested in production. Verified by design.
3 Refer to the performance plot in Figure 7.
Table 6. SKY66289-11 Electrical Specifications
(VCC1 = VCC3 = VBIAS = 5 V, PAEN = 2.0 V, f = 780 MHz, TC = +25 C, Input/Output Load = 50 , Unless Otherwise Noted)
Parameter
Frequency
Symbol
Test Condition
f
Min
Typ
753
Small signal gain
|S21|
PIN = -30 dBm
36.5
dB
Gain @ +28 dBm
|S21|@+28 dBm
CW, POUT=+28 dBm
36.3
dB
Input return loss
|S11|
PIN = -20 dBm
20
dB
Output return loss
|S22|
PIN = -20 dBm
12
dB
Reverse isolation1
|S12|
PIN = -30 dBm
59
dB
ACLR @ +28 dBm
ACLR
POUT = +28 dBm (20 MHz LTE, 8.5 dB PAR signal)
-33
dBc
Output power@ PIN = +5 dBm
POUT@+5 dBm PIN
CW, PIN = +5 dBm
+35.8
dBm
Output power @ 3dB gain compression
P3dB
CW, reference to small signal gain
+33.7
dBm
2nd harmonic
2fO
CW, POUT = +28 dBm
-39
dBc
3fO
CW, POUT = +28 dBm
-65
dBc
34.6
%
68
mA
rd
3 harmonic
Power-added efficiency
PAE
CW, POUT = +28 dBm
Quiescent current
ICCQ
No RF signal
1 Not tested in production. Verified by design.
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Typical Performance Characteristics
45
45
40
40
35
35
30
30
PAE (%)
25
20
25
20
203648-003
10
791 MHz
806 MHz
824 MHz
5
10
12
14
16
18
20
22
24
26
28
–40 °C
+25 °C
+85 °C
5
0
0
10
10
30
12
14
16
18
22
24
26
28
30
Figure 4. PAE vs POUT Across Temperature
Figure 3. PAE vs POUT Across Frequency
–29
–29
–30
–30
–31
–31
–32
–32
–33
–33
ACLR (dBc)
ACLR (dBc)
20
POUT (dBm)
POUT (dBm)
–34
–35
–36
–34
–35
–36
–37
–37
–39
791 MHz
806 MHz
824 MHz
–40
–41
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
–38
203648-005
–38
–40 °C
+25 °C
+85 °C
–39
–40
–41
25.0
29.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
POUT (dBm)
POUT (dBm)
Figure 6. ACLR vs POUT Across Temperature
Figure 5. ACLR vs POUT Across Frequency
39
38
791 MHz
806 MHz
824 MHz
37
–40 °C
+25 °C
+85 °C
38
37
36
36
Gain (dB)
35
34
33
35
34
33
31
30
6
8
10
12
14
16
18
20
22
24
26
28
30
32
POUT (dBm)
Figure 7. Gain vs POUT Across Frequency
34
36
38
32
203648-008
32
203648-007
Gain (dB)
203648-004
15
15
203648-006
PAE (%)
(VCC1 = VCC2 = VCC3 = VBIAS = 5 V, PAEN = 2.0 V, f = 780 MHz, TC = +25 °C, Input/Output Load = 50 Ω, Unless Otherwise Noted)
31
30
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
POUT (dBm)
Figure 8. Gain vs POUT Across Temperature
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2000
2000
1800
1800
1600
1600
1400
1400
1200
1200
Iop (mA)
1000
800
1000
800
600
600
203648-009
400
791 MHz
806 MHz
824 MHz
200
0
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
400
–40 °C
+25 °C
+85 °C
200
0
6
38
8
10
12
14
16
POUT (dBm)
Figure 9. Operating Current vs POUT Across Frequency
26
28
30
32
34
36
38
–40 °C
+25 °C
+85 °C
–70
–41
–42
–43
–44
791
796
801
806
811
816
821
–74
–76
–78
–80
203648-012
3rd Harmonics (dBc)
–72
–40
203648-011
2nd Harmonics (dBc)
20
22
24
POUT (dBm)
–68
–40 °C
+25 °C
+85 °C
–39
–82
–84
–86
791
796
801
806
811
816
821
Frequency (MHz)
Frequency (MHz)
Figure 12. 3rd Harmonic vs Frequency Across Temperature
@POUT = +28 dBm (CW)
Figure 11. 2nd Harmonic vs Frequency Across Temperature
@POUT = +28 dBm (CW)
+40
38.0
–40 °C
+25 °C
+85 °C
37.5
+30
37.0
+20
36.5
S21 (dB)
36.0
35.5
35.0
+10
0
203648-013
–10
34.5
34.0
33.5
791
796
801
806
811
816
821
Frequency (MHz)
Figure 13. Small Signal Gain vs Frequency Across Temperature
203648-014
S21 (dB)
18
Figure 10. Operating Current vs POUT Across Temperature
–38
–20
–30
0
1000
2000
3000
4000
5000
6000
Frequency (MHz)
Figure 14. Wide Band Small Signal Gain vs Frequency
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203648-010
Iop (mA)
DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
–12
–17
–40 °C
+25 °C
+85 °C
–19
–40 °C
+25 °C
+85 °C
–13
S22 (dB)
S11 (dB)
–21
–23
–25
–14
–15
–29
791
796
801
–16
–17
806
791
796
801
806
816
821
Figure 16. Output Return Loss vs Frequency Across Temperature
Figure 15. Input Return Loss vs Frequency Across Temperature
45
-30
40
-32
35
-34
-36
ACPR (dBc)
30
25
20
15
-40
-42
5
753 MHz
780 MHz
803 MHz
-47
203648-017
10
-38
-44
753 MHz
780 MHz
803 MHz
-48
-50
0
12
14
16
18
20
22
24
26
28
25
30
25.5
26
26.5
POUT (dBm)
27
27.5
28
28.5
29
POUT (dBm)
Figure 17. PAE vs POUT Across Frequency
Figure 18. ACLR vs POUT Across Frequency
38
753 MHz
780 MHz
803 MHz
37
36
35
34
33
32
203648-019
10
Gain (dB)
PAE (%)
811
Frequency (MHz)
Frequency (MHz)
203648-018
–31
203648-016
203648-015
–27
31
30
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
POUT (dBm)
Figure 19. Gain vs POUT Across Frequency
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Evaluation Board Description
Circuit Design Considerations
The SKY66289-11 Evaluation Board is used to test the
performance of the SKY66289-11 PA. An Evaluation Board
schematic is provided in Figure 20. Table 6 provides the Bill of
Materials (BOM) list for Evaluation Board components.
The following design considerations are general in nature and
must be followed regardless of final use or configuration:
An assembly drawing for the Evaluation Board is shown in
Figure 21. Layer details are shown in Figure 22. Layer details
physical characteristics are noted in Figure 23.
Evaluation Board Test Procedure
Turn-On Sequence
1.
2.
3.
4.
5.
Connect 50  test equipment or load to the input and
output RF ports of the Evaluation Board.
Connect the DC ground.
Connect all VCCs and VBIAS lines to a +5 V supply.
Connect PAEN to a 2.0 V supply.
Without applying RF, turn on the 5 V supply, then turn on
the 2 V PAEN.
Apply RF signal at -30 dBm and observe that the gain of
the device complies with the values in Table 5. Begin
measurements.
 Paths to ground should be made as short as possible.
 The ground pad of the SKY66289-11 has special electrical and
thermal grounding requirements. This pad is the main thermal
conduit for heat dissipation. Because the circuit board acts as
the heat sink, it must shunt as much heat as possible from the
device.
 Therefore, design the connection to the ground pad to dissipate
the maximum wattage produced by the circuit board. Multiple
vias to the grounding layer are required.
NOTE: A poor connection between the ground pad and ground
increases junction temperature (TJ), which reduces the life of the
device.
Turn-Off Sequence
1.
2.
3.
Turn off the RF input to the device.
Turn off PAEN (set to 0 V).
Turn off all VCCs and VBIAS.
NOTE: It is important to adjust the VCC voltage sources so that
+5 V is measured at the board. High collector currents drop the
collector voltage significantly if long leads are used. Adjust the
bias voltage to compensate.
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Not Used
VCC1
1
VBIAS
3
4
VCC1
GND5
GND1
4 GND2
PAEN
2
3
GND6
SKY66289-11
PAEN
L1
12
VCC3
C6
2 RFIN
SMA
VCC3
GND
5
6
7
GND4
C1
13
GND_PAD
VBIAS
J7
14
GND3
1
15
GND8
17
16
VCC1
U1
GND7
C11
C12
C7
C8
11
10
RFOUT 9
J8
RFOUT
8
VBIAS
5
C3
6
VCC2 (Do not connect)
PAEN
7
8
VCC3
8-Pin Header
C4
Notes:
The C1 component shown in this assembly is a 0 Ω resistor.
The L1 component shown in this assembly is DNI.
203648-020
Figure 20. SKY66289-11 Evaluation Board Schematic
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Table. 6. SKY66289-11 Evaluation Board Bill of Materials (BOM)
Component
Description
Size
C1
Resistor, 0 , jumper, 0.063 W
0402
C3, C4, C7, C11
Ceramic capacitor, 3300 pF, X7R, ±10%, 50 V
0402
C6
Ceramic capacitor, 100 pF
0402
C8, C12
Ceramic capacitor, 10 F, 16 V, ±10% , X7R
1206
L1, C9, C10
DNI
DNI
TW21-D690-031
Evaluation Board
-
J1
PAEN VBIAS GND VCC1 GND VCC2 GND VCC3
RF IN
C12
C10
C11
C9
C6 C7
C8
RF OUT
C1
J19
U1
J8
L1
C3
C4
203648-021
Notes:
1. Evaluation Board Gerber files available upon request.
2. The C1 component shown in this assembly is a 0 Ω resistor.
3. C9 and C10 are not installed.
4. VCC2 is not used.
Figure 21. Evaluation Board Assembly Drawing
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Layer 2
Layer 1
203648-022
Note: L1, C9, and C10 are DNI components.
Layer 4
Layer 3
Figure 22. Evaluation Board Layer Details
50 Ohm
W = 0.500 mm
Cross Section
Name
TMask
L1
Dielectric
L2
Dielectric
L3
Dielectric
L4
BMask
Thickness (mm)
0.010
0.035
0.250
0.035
0.350
0.035
0.250
0.035
0.010
Materials
Solder Resist
Cu, 1 oz.
R04350
Cu, 1 oz.
FR4
Cu, 1 oz.
FR4
Cu, 1 oz.
Solder Resist
203648-023
Figure 23. Layer Detail Physical Characteristics
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DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Application Circuit Notes
Package Dimensions
Center Ground. It is extremely important to sufficiently ground
the bottom ground pad of the device for both thermal and stability
reasons. Multiple small vias are acceptable and work well under
the device if solder migration is an issue.
Typical part marking for the SKY66289-11 is shown in Figure 24.
The PCB layout footprint for the SKY66289-11 is shown in
Figure 25. Package dimensions are shown in Figure 26, and tape
and reel dimensions are provided in Figure 27.
GND (pins 1, 3, 4, 7, 8, 10, 11, 13, and 15). Attach all ground
pins to the RF ground plane with the largest diameter and lowest
inductance via that the layout allows. Multiple small vias are
acceptable and will work well under the device if solder migration
is an issue.
Package and Handling Information
VBIAS (pin 5). The bias supply voltage for each stage, nominally
set to +5 V.
RFOUT (pin 9). Amplifier RF output pin (ZO = 50 ). The module
includes an onboard internal DC blocking capacitor. All
impedance matching is provided internal to the module.
VCC1 and VCC3 (pin 16 and 12, respectively). Supply voltage for
each stage collector bias is nominally set to 5 V. Bypass and
decoupling capacitors C6 through C12 should be placed in the
approximate location shown on the evaluation board assembly
drawing, although exact placement is not critical.
RFIN (pin 2). Amplifier RF input pin (ZO = 50 ). The module
includes an onboard internal DC blocking capacitor. All
impedance matching is provided internal to the module.
Since the device package is sensitive to moisture absorption, it is
baked and vacuum packed before shipping. Instructions on the
shipping container label regarding exposure to moisture after the
container seal is broken must be followed. Otherwise, problems
related to moisture absorption may occur when the part is
subjected to high temperature during solder assembly.
The SKY66289-11 is rated to Moisture Sensitivity Level 3 (MSL3)
at 260 C. It can be used for lead or lead-free soldering. For
additional information, refer to Skyworks Application Note, PCB
Design and SMT Assembly/Rework Guidelines for MCM-L
Packages, document number 101752.
Care must be taken when attaching this product, whether it is
done manually or in a production solder reflow environment.
Production quantities of this product are shipped in a standard
tape and reel format.
Pin 1
Indicator
66289-11
XXXXXXXXX
YYWW CC
203648-024
Skyworks
Part Number
Lot Code
Date Code:
YY = Calendar Year
WW = Work Week
CC = Country Code
Figure 24. Typical Part Marking
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October 19, 2017 • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • 203648D
DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
5.3 mm
16X 0.5 mm
16X 0.67 mm
Pin 16
Pin 1 Indicator
0.20 X 45°
Pin 1
Stencil aperture size for center ground pad should be
80% to 100% (by area) of the solder mask opening
5.3 mm
0.8 mm Pitch
9X ø0.875 mm
Package Outline
0.125 mm Typ
Stencil Aperture
Top View
5.3 mm
5.4 mm
0.6 mm Pitch
7X 0.67 mm
7X 0.5 mm
Pin 1
0.6 mm Pitch
16X 0.6 mm
16X 0.77 mm
Pin 16
Pin 1 Indicator
0.20 X 45°
Pin 1
Pin 16
5.4 mm
5.3 mm
2X 1.4375 mm
0.8 mm Pitch
Thermal via array Ø0.3 mm
on 0.6 mm pitch improves
thermal performance
Package Outline
Package Outline
0.8 mm Pitch
0.25 mm Typ
Opening size of 60% to 100%
of exposed center opening shown
Metallization
Top View
2X 1.4375 mm
Solder Mask Opening
Top View
Notes:
1. Thermal vias should be resin filled and capped in accordance with IPC–4761 type VII vias.
2. Recommended Cu thickness is 30 to 35 μm.
203648-025
Figure 25. SKY66289-11 PCB Layout Footprint
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
203648D • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • October 19, 2017
13
DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
B
16X SMT Pad
0.1 M A B C
Top
Pin 1 Indicator
Pin 16
Solder Mask Opening
0.2 A B C
C
0
5
Pin 1 Indicator
See Detail C
Pin 1
4X 1.2
5
4X 0.4
0
See Detail B
6X 1
6X 1
See Detail A
8X 2.4
Top View
Side View
6X 1
4X 0.4
0.1
4X 1.2
0.15 A B C
A
8X 2.4
1.3 ±0.1
Bottom View
0.42 ± 0.1
(0.1)
0.20 x 45°
0.875
Metal Pad Edge
0.875
0.6 ±0.05
0.5 ±0.05
5X R0.05 Max
0.875
4X R0.05 Max
Detail A
Detail B
Pad
Scale: 2X
4X this rotation
4X rotated 180°
4X rotated 90° CW
4X rotated 90° CCW
Notes:
0.875
Solder Mask Edges
Solder Mask Edge
Solder Mask Edges
Pad
Scale: 2X
8X this rotation
Detail C
Pad
Scale: 2X
1X this rotation
1. Dimensions are in millimeters (unless otherwise specified).
2. Dimensions and tolerances are in accordance with ASME Y14.5M–1994.
203648-026
Figure 26. SKY66289-11 Package Dimensions
0.25 ± 0.20
Ø1.
50
2.00 ± 0.10
±0
4.00 ± 0.10
1.75 ± 0.10
5.25 ± 0.10
5.50 ± 0.10
Pin 1
1.40 ± 0.10
8.00 ± 0.10
12.00 ± 0.20
.10
Ø1.50 ± 0.10
Notes:
1. Carrier tapes must meet all requirements of Skyworks GP01-D232 procurement spec for tape and reel shipping.
2. Carrier tape shall be black conductive polycarbonate.
3. Cover tape shall be transparent conductive material.
4. ESD-surface resistivity shall be ≤ 1 × 1010 Ω/square per EJA, JEDEC TNR specification.
5. All measurements are in millimeters.
5.25 ± 0.10
203648-027
Figure 27. SKY66289-11 Tape and Reel Dimensions
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
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October 19, 2017 • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • 203648D
DATA SHEET • SKY66289-11: 750 TO 850 MHz HIGH-EFFICIENCY 4 W POWER AMPLIFIER
Ordering Information
Product Description
SKY66289-11: 750 to 850 MHz High-Efficiency 4 W Power Amplifier
Product Part Number
Evaluation Board Part Number
SKY66289-11
SKY66289-11-EVB
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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
203648D • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • October 19, 2017
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