查询TA2109F供应商 捷多邦,专业PCB打样工厂,24小时加急出货

查询TA2109F供应商 捷多邦,专业PCB打样工厂,24小时加急出货
 TOSHIBA TA2109F
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TA2109F
RF AMPLIFIER FOR DIGITAL SERVO CD SYSTEM
TA2109F is a 3-beam type PUH compatible RF Amplifier
for Digital Servo to be used in the CD system.
In combination with a CMOS single chip processor
TC9432AF a CD system can be composed very simply.
FEATURES
e Built in amplifier for reference (VREF, 2 VREF) supply.
® Built in Auto Laser Power Control circuit.
® Built in RF amplifier. S
e Built in focus error amp and tracking error amp.
e Built in sub-beam adder signal amplifier.
® Capable of tracking balance control with TC9432AF.
® Capable of RF gain adjustment circuit with TC9432AF.
e Built in signal amplifier for track counter.
® Capable of 4 times speed operation.
e 24 pin mini flat package.
980910EBA1
@ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
@ The products described in this document are subject to the foreign exchange and foreign trade laws.
@ The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
~ property or other rights of TOSHIBA CORPORATION or others.
Y | O The information contained herein is subject to change without notice.
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TOSHIBA
BLOCK DIAGRAM
TA2109F
{ TEB
3 STATE
DET.
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BOTTOM
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12k
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LDC
«— ——
|
—
LDC
SEL SW1 | SW2 | SW3
L ON | OFF | OFF
HiZ OFF | ON ON
H OFF | ON ON
1999-01-26 2/8
TOSHIBA TA2109F
PIN FUNCTION
No. SYMBOL |1/0 FUNCTIONAL DESCRIPTION REMARK
1 Vee — | Power supply input terminal —
. . . Connected to pin
2 FNI | M |-\/ | .
ain beam amp input termina diode A, C
Connected to pin
3 FPI | [Main beam !-V amp input terminal diode в D OP!
. . Connected to pin
|-V | .
4 TPI | |Sub beam amp input termina diode F
. Connected to pin
| |-М | | |
5 TNI Sub beam amp input termina diode E
6 MDI | | Monitor photo diode amp input terminal poto diode monitor
Connected to laser
7 LDO O [Laser diode amp output terminal A.
control circuit
8 SEL | Laser diode control signal input terminal 3 signal input
and APC circuit ON/OFF control signal input terminal (Vcc, Hi-Z, GND)
Tracking error balance adjustment signal input terminal .
. 3 signal input
9 TEB | |Controlled by 3 PWM signal (2V VR, GND)
(PWM carrier = 88.2 kHz) REF: ^^
10 ВО о Reference voltage (2 VreF) output terminal —_
2 VREF = 4.2 V when Vcc = 5V
Connected to TEO
11 TEN | | TE amp negative input terminal through feedback
register
12 TEO O |TE error signal output terminal —
13 SBAD O [Sub beam adder signal output terminal —
14 FEO O | Focus error signal output terminal —
Connected to FEO
15 FEN | |FE amp negative input terminal through feedback
register
Reference voltage (VreF) output terminal
16 VRO —
VREF = 2.1V when Vcc = 5V
17 RFRP Track count signal output terminal —
gos RF
18 RFIS | | RFRP detect circuit input terminal Connected to RFO
through condenser
19 RFGO О | RF gain signal output terminal —
20 RFGC | RF amplitude adjustment control signal input terminal 3 signal input
Controlled by 3 PWM signal (PWM carrier = 88.2 kHz) (2 VREE, VR, GND)
Connected to RFO
. . . . inal
21 AGCI | |RF signal amplitude adjustment amp input termina through condenser
22 RFO O |RF signal output terminal —
23 GND — | Ground terminal —
24 RFN | | ВЕ amp negative input terminal —
1999-01-26 3/8
TOSHIBA TA2109F
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Power Supply Voltage Vee 8 V
Power Dissipation PD 400 mW
Operating Temperature Topr — 40—85 °C
Storage Temperature Tstg —-55—150 °C
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Vcc = 5V, Та = 25°C)
AC CHARACTERISTICS
TEST
CHARACTERISTIC SYMBOL | CIR- TEST CONDITIÓN MIN. TYP. MAX. | UNIT
CUIT
Power Assured Supply Voltage Vee 1 4.5 5.0 5.5 \/
Supply Power Supply Voltage ICC 1 |SEL= Vcc 18 24 30 | mA
Reference | Reference Voltage 2 VR 1 4.0 4.2 4.4 V
Voltage : | Output Current IOH2 1 AV = -0.1V 3.0 — — MA
2VREF Input Current 1012 1 [AV = +0.1V 0.1 — — MA
Reference Voltage VR 1 2.0 2.1 2.2 V
Reference reference Voltage Limit AVR 1 |2xVR/2VR-1 -3.0 | 0.0 | +3.0 | %
LE ' Output Current IOH1 1 |4V = -0.1V 5.0 — — mA
Input Current lOL1 1 |JAV = +0.1V 5.0 — — mA
Transfer Resistance RT 1 |+ = 100 КН2, В№Е = 22 КО 117 130 143 | КО
Frequency Characteristic fc 1 —3 dB point — 5.0 — MHz
КЕ! Output Slew Rate SR 1 | CRFO = 20 pF 10 20 — V/ us
FPI (FNI) Noise / Distortion Rate THD 1 f = 100kHz, VRFOQ = 1.2 Vp-p — — 40 — dB
—RFO Upper Limit Output Voltage VOH 1 | GND reference 3.6 — — V
Lower Limit Output Voltage VOL 1 | GND reference — — 0.7 V
Permissive Load Resistance RLM 1 10 — — КО
Lower Limit Gain Voltage Gv1 1 |f = 100kHz, RFGC = 0.6V 0.66 | 0.73 0.80 | V/V
Upper Limit Gain Voltage Gy? 1 |f= 100kHz, RFGC = 3.6V 1.60 1.75 1.90 | V/V
Frequency Characteristic fc 1 —3 dB point — 5.0 — MHz
RF2 (AGC)
RFO Output Slew Rate SR 1 | CRFGO = 20 pF 10 20 — V/ us
_SRFGO Upper Limit Output Voltage VOH 1 | GND reference 3.6 — — V
Lower Limit Output Voltage VOL 1 | GND reference — — 0.7 V
Noise / Distortion Rate THD 1 |f= 100kHz, VRFGO = 1.2 Vp-p — — 40 — dB
Permissive Load Resistance RLM 1 10 — — КО
Gain Voltage Gv 1 |f=1kHz — 200 — V/V
с Operation Reference Voltage | VMDI 1 |VLDO = 3.5Vpc 170 178 192 | mV
ро LD Off Voltage VLDOP 1 |LDC = L, Vec reference, SEL = L — 0.7 — — V
Input Vias Current || 1 |VMDI = 178 mV — 200 — +200 | nA
1999-01-26 4/8
TOSHIBA TA2109F
CHARACTERISTIC SYMBOL an TEST CONDITION MIN. | TYP. | MAX. | UNIT
CUIT
Transfer Resistance RT 1 |f=1kHz, RNF = 39k0 198 220 242 | КО
Gain Balance GB 1 — 1.0 — +1.0 1 dB
Frequency Characteristic fc 1 —3 dB point — 22 — kHz
i (FP) Output Offset Voltage Vos 1 | VR reference, input open — 30 — +30 | mV
FEO Noise / Distortion Rate THD 1 |f=1kHz, VFEQ = 2.4 Vp, — — 40 — dB
Upper Limit Output Voltage VOH 1 | GND reference 3.8 — — V
Lower Limit Output Voltage VOL 1 | GND reference — — 0.5 V
Permissive Load Resistance RLM 1 10 — — КО
Transfer Resistance RT 1 |f=1kHz, TEB = VR, RNF = 33k{2 1.53 1.70 1.87 | МО
Transfer Resistance Range TEB = VR reference
Max. Transfer Resistance | ART 1 |TEB = GND 35 45 55 | %
Max. Transfer Resistance TEB = 2VR - 55 — 45 -35| %
Gain Balance GB 1 |TEB = VR — 1.0 — +1.0 | dB
TE Frequency Characteristic
TPI (TNI) Cut-Off Frequency 1 fo 1 |RNF = 33kQ — 44| — | kHz
—>TEO Cut-Off Frequency 2 feo — 240 — kHz
Output Offset Voltage Vos 1 | VR reference, input open — 80 — +80 | mV
Noise / Distortion Rate THD 1 |f=1kHz, VTrEO = 2.0 Vo-p — — 40 — de
Upper Limit Output Voltage VOH 1 | GND reference 3.8 — — V
Lower Limit Output Voltage VOL 1 | GND reference — — 05| V
Permissive Load Resistance RLM 1 10 — — КО
Transfer Resistance RT 1 f = 1kHz, TEB = VR 416 520 624 | kQ
Frequency Characteristic fc 1 —3 dB point — 44 — kHz
SBAD Noise / Distortion Rate THD 1 |f=1kHz, VSBAD = 1-5 Vp-p — — 40 — de
TPI (TNI) TNI/TPI = VR, VR reference — 1.1 - 1.0 | -0.9
Operation Reference Voltage | VOPR 1 - V
—SBAD TNI/ TPI = Hiz, VR reference — 1.2 — 1.1 — 1.0
Upper Limit Output Voltage VOH 1 | GND reference 3.8 | — — V
Permissive Load Resistance RLM 1 10 — — КО
Gain Voltage Gv 1 1.37 1.46 1.54 | V/V
Detection Frequency f — |seL=v _ 100 _ kHz
Characteristic ¢ CC
RFRP Operation Reference Voltage VR reference
RFISSRFRP VOPR1 1 | -1.1| -10| -09| V
No signal
Operation Reference Voltage VOPR2 VR reference +065 | +075| +0.85 y
2 700 kHz, 1.2 Vp-p
Permissive Load Resistance RLM 1 10 — — КО
1999-01-26 5/8
TA2109F
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1999-01-26 7/8
TOSHIBA
OUTLINE DRAWING
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Weight : 0.3 g (Typ.)
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0.1545 1.8
TA2109F
Unit : mm
7.62
(300mil)
0.157335
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1999-01-26 8/8
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