LNAs for ACTIVE ANTENNAS - California Eastern Laboratories

GPS / Satellite Radio
LNAs for ACTIVE ANTENNAS
NEC GaAs MMIC LNAs
NEC’S high gain, low noise, low distor-
XM Satellite Radio
2.34 GHz
tion GaAs MMIC LNAs were developed
UPG2310TK
specifically for GPS and SDARS active
TUNER
antenna applications. They’re housed in
a variety of RoHS-compliant packages
NE3509M04
NE3508M04
NE662M04
NESG2101M05
NE663M04
NE3508M04
NE3509M04
NESG2101M05
including the ultra-minature “TK.” This
6 pin, low profile package features flat
2.33 GHz
leads for better RF performance.
SIRIUS Satellite Radio
NEC GaAs HJ FET TRANSISTORS
NEC’s discrete HJ FET LNAs deliver the
industry’s lowest noise figures with high
TUNER
NE3508M04
NE3509M04
NE3508M04
NE3509M04
NE663M04
NESG3031M05
NESG2101M05
associated gain. The NE3509 is ideal
for use as first stage amplifiers, while
1.575 GHz
the NE3508 is designed to serve as a
NE3508M04
NESG2101M05
GPS
second or third stage companion device.
UPG2311T5F
They’re housed in NEC’s miniature, 4-pin
flat-lead, RoHS-compliant M04 package.
GPS
RECEIVER
NE3508M04
NE3509M04
NEC BIPOLAR TRANSISTORS
NE662M04
NE663M04
NESG2101M05
NESG3031M05
The NE662 and NE663 discrete silicon
LNAs are fabricated using NEC’s high
speed UHS0 25 GHz fT wafer process
and deliver excellent low voltage/low
current performance. They’re also
housed in NEC’s M04 package.
NEC SiGe TRANSISTORS
With their low noise figures and high
associated gain, NEC’s discrete SiGe
FEATURES
See specifications on next page
NEC GaAs MMIC LNAs
UPG2310TK 27.0 dB gain, low 1.8 dB NF, high Intercept Point,
miniature 1.1 x 1.5 x 0.55mm 6 pin package
UPG2311T5F Two-stage device delivers 37dB gain with low
1.2dB NF, miniature 3 x 3mm 12-pin QFN package
LNAs combine the performance of GaAs
NEC GaAs HJ FET LNAs
with the cost advantages of silicon. The
NE3509M04 Ideal 1st stage device, 16.3 dB gain with low
0.35 dB NF, 2.0 x 2.05 x 0.59 mm footprint
NE3508M04
Ideal 2nd or 3rd stage device, 14.0 dB gain with
0.45 dB NF, SOT-343-style package, 0.59 mm profile
NESG2101 and NESG3031 are housed
in NEC’s RoHS-compliant M05 package.
It features an industry-standard SOT-343
footprint with a low, 0.59mm profile.
DATA SHEETS: www.cel.com
NEC Small Signal Silicon Bipolar Transistor LNAs
NE662M04
17 dB gain, ideal 2nd or 3rd stage high gain device,
SOT-343-style package, 0.59 mm profile
NE663M04
+17dBm P1dB, high linearity, ideal 2nd or 3rd stage
device, SOT-343-style package, 0.59 mm profile
NEC SiGe Transistor LNAs
CL588A 3.07
NESG2101M05
High output power 2nd or 3rd stage device,
2.0 x 2.5mm footprint package, 0.59 mm profile
NESG3031M05
Low noise, high breakdown voltage 1st or 2nd stage,
2.0 x 2.5mm footprint package, 0.59 mm profile
NEC RF SEMICONDUCTORS
SPECIFIC ATIONS
LNAs for GPS and Satellite Radio ACTIVE ANTENNAS
Data Sheets for the devices can be found at www.cel.com
NEC GaAs MMIC LNA
Part Number Description
UPG2310TK 1
UPG2311T5F 2
Typical Perfomance
Supply Voltage
(V) Noise Figure
(dB) Gain
(dB) Output Power
P1dB (dBm)
High gain, low distortion driver stage
amplifier, 1.5 x 1.1 x 0.55mm package
3.0
1.8
27
+ 16
Two-stage, high gain, low noise device, 3 x 3 x 0.75mm 12-pin QFN package
3.0
1.2
37
+9
NOTE: 1. Data specified at 2.34GHz 2. Data specified at 1.575GHz
NEC GaAs HJ FETs
Part Number Description
Typical Perfomance @ 2.4 GHz
Noise Figure
(dB) Gain
(dB) Output Power
P1dB (dBm)
NE3508M04
Designed for 2nd or 3rd stage amplification, SOT-343 footprint, 0.59 mm profile
0.45
14
+ 18
NE3509M04
First stage device, super low noise figure,
SOT-343 footprint, 0.59 mm profile
0.35
16
+ 11
NEC Small Signal Bipolar Transistors
Part Number Description
Typical Perfomance @ 2.4 GHz
Noise Figure
(dB) Gain
(dB) Output Power
P1dB (dBm)
NE662M04
Ideal for 2nd or 3rd stage amplification, SOT-343 footprint, 0.59 mm profile
2.0
17
+ 11
NE663M04
Ideal for 2nd or 3rd stage amplification,
SOT-343 footprint, 0.59 mm profile
1.5
11
+ 17
NEC SiGe Transistors
Part Number Description
Typical Perfomance @ 2.4 GHz
Figure 1
Noise
(dB) Gain
(dB) Output Power
P1dB (dBm)
NESG2101M05
High power, low noise, high breakdown voltage, SOT-343 footprint, 0.59 mm profile
1.5
13
+ 21
NESG3031M05
High power, low noise, high breakdown
voltage, SOT-343 footprint, 0.59 mm profile
1.0
17
+ 13
NOTE: 1. Biased for best gain
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