®
SP2209E
High ESD Dual Port RS-232 Transceiver
■ Meets True EIA/TIA-232-F Standards
■ Complies with 89/336/EEC EMC Directive
■ Single +12V Power Supply
■ <5mA Low Power CMOS Operation
■ 100µA Low Standby Current
■ Operates With +3V Or +5V Logic
■ Allows +3.3V to +5V Standby Supply
■ Two Complete Serial Ports, 6 Drivers and
10 Receivers
■ One Receiver On Each Port Active In
Standby
■ Failsafe Receiver Outputs
■ 460kbps Minimum Data Rate
■ Guaranteed LapLink® - Compatible
■ Ideal For High Speed RS-232 Applications
■ 0.1µF Charge Pump Capacitors
■ Low EMI Emissions (EN55022)
■ Pin Compatible To ADM2209E device
■ Enhanced ESD Specifications:
+15KV Human Body Model
+15KV EN61000-4-2 Air Discharge
+8KV EN61000-4-2 Contact Discharge
■ Fast Transient Burst (EFT) Immunity
(EN61000-4-2)
DESCRIPTION
The rugged, high ESD SP2209E device is a complete dual RS-232 port integrated onto a
single integrated circuit. Six drivers and ten receivers provide designers a dual port solution
fully meeting the EIA/TIA-232 and ITU-T V.28/V.24 communication protocols and can be
implemented in applications such as personal desktop computers and workstations.
Features include high transmission rates, low power consumption, an internal charge-pump
power supply that requires only two capacitors, space saving 38-pin TSSOP package
dimensions, and compatibility with the EU directive on electromagnetic compatibility.
This device is ideal for operation in electrically harsh environments or where RS-232 cables
are frequently being plugged and unplugged. This device is also immune to high RF field
strengths without special shielding precautions.
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
Output Voltages
TXOUTA..............................................................+15V
TXOUTB..............................................................+15V
RXOUTA...................................-0.3V to (VSTBY + 0.3V)
RXOUTB...................................-0.3V to (VSTBY + 0.3V)
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability and cause permanent damage to the
device.
Short-Circuit Duration
TXOUTA....................................................Continuous
TXOUTB....................................................Continuous
VDD......................................................-0.3V to +14.0V
VSTBY........................................................-0.3V to +7V
Storage Temperature........................-65°C to +150°C
Power Dissipation per package
Input Voltages
TXINA........................................-0.3V to (VSTBY + 0.3V)
TXINB........................................-0.3V to (VSTBY + 0.3V)
RXINA..................................................................+15V
RXINB..................................................................+15V
38-pin TSSOP (derate 14.3mW/oC above +70oC).....1200mW
SPECIFICATIONS
Unless otherwise noted, the following specifications apply for VDD = +12.0V + 10%, VSTBY = +3.3V + 5% or +5V + 10%,
C1 = C2 = 0.1µF, and TAMB = TMIN to TMAX.
PARAMETER
MIN.
TYP.
MAX.
UNITS
CONDITIONS
5
mA
no load, all driver inputs at 0.4V or 2.1V,
all receiver inputs at +15V or -15V
200
µA
no load, all driver inputs at VSTBY or open
0.4
V
TAMB = 25oC
DC CHARACTERISTICS
Supply Current
Standby Supply Current, VSTBY
100
CMOS LOGIC INPUTS AND RECEIVER OUTPUTS
Input Logic Threshold Voltage
LOW
HIGH
2.1
Input Leakage Current
10
25
µA
Driver input at 0V
Output Voltage LOW
0.2
0.4
V
IOL = +1.6mA
V
IOH = -40µA
µA
VDD = 0V, (except R5OUTA and R5OUTB)
Output Voltage HIGH
Output Leakage Current
SP2209E DS/06
2.4
+0.05
+5
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SPECIFICATIONS (continued)
Unless otherwise noted, the following specifications apply for VDD = +12.0V + 10%, VSTBY = +3.3V + 5% or +5V + 10%,
C1 = C2 = 0.1µF, and TAMB = TMIN to TMAX.
PARAMETER
MIN.
TYP.
Output Voltage Swing
+5.0
+9.0
Output Resistance
300
Output Short-Circuit Current
+5
MAX.
UNITS
CONDITIONS
V
all driver outputs loaded with 3KΩ to GND
Ω
VDD = VSTBY = 0V, VOUT = +2V
DRIVER OUTPUTS
+15
+30
mA
one driver output shorted, VIN = 0.8V,
VOUT = 0V
RECEIVER INPUTS
Input Voltage Range
-15
Input Threshold LOW
0.4
+15
1.45
Input Threshold HIGH
1.7
Input Hysteresis
0.25
Input Resistance
3
V
V
2.4
V
7
kΩ
V
5
VIN = +15V
TIMING CHARACTERISTICS
Driver Maximum Data Rate
460
460
kbps
920
Driver Propagation Delay
tPHL
µs
1.0
tPLH
1.0
Driver Transition-Region
Slew Rate
6
4
Receiver Maximum Data Rate
16
16
V/µs
460
920
kbps
Receiver Propagation Delay
tPHL (R1x - R4x)
tPLH (R1x -R4x)
tPHL (R5x)
tPLH (R5x)
0.4
0.4
0.75
0.75
1.0
1.0
2.0
2.0
µs
RL = 3kΩ to 7kΩ, CL = 50pF to 470pF
RL = 3kΩ to 7kΩ, CL = 50pF to 1000pF
TAMB = 0oC to +85oC, VSTBY = 5V + 10% only
RL = 3kΩ to 7kΩ, CL = 50pF to 470pF,
VSTBY = 5V + 5%, VDD = 12V + 5%
RL = 3kΩ, CL = 1000pF,
refer to Figures 3 and 5
RL = 3kΩ, CL = 1000pF,
refer to Figures 3 and 5
RL = 3kΩ to 7kΩ, CL = 50pF to 470pF
RL = 3kΩ to 7kΩ, CL = 50pF to 1000pF
VSTBY = 5V + 10% only, measurements
taken from -3.0V to +3.0V or +3.0V to -3.0V
CL = 150pF
CL = 150pF, VSTBY = 5V + 5% only
CL = 150pF, refer to Figures 4 and 6
CL = 150pF, refer to Figures 4 and 6
CL = 150pF, refer to Figures 4 and 6
CL = 150pF, refer to Figures 4 and 6
Receiver Output Rise Time
30
ns
refer to Figures 4 and 6
Receiver Output Fall Time
30
ns
refer to Figures 4 and 6
OPERATING CHARACTERISTICS
Operating Voltage Range, VDD
+10.8
+13.2
V
Standby Voltage Range, VSTBY
+3.15
+5.5
V
Operating Temperature, TAMB
-40
+85
oC
SP2209E DS/06
+12.0
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
NAME
FUNCTION
PIN NUMBER
R5OUTA
+3.3V to +5V TTL/CMOS logic level receiver output for port A.
1
R4OUTA
+3.3V to +5V TTL/CMOS logic level receiver output for port A.
2
R3OUTA
+3.3V to +5V TTL/CMOS logic level receiver output for port A.
3
R2OUTA
+3.3V to +5V TTL/CMOS logic level receiver output for port A.
4
R1OUTA
+3.3V to +5V TTL/CMOS logic level receiver output for port A.
5
T3INA
+3.3V to +5V TTL/CMOS logic level driver input for port A.
6
T2INA
+3.3V to +5V TTL/CMOS logic level driver input for port A.
7
T1INA
+3.3V to +5V TTL/CMOS logic level driver input for port A.
8
STBY
+3.3V to +5V standby power supply for receivers R5OUTA and R5OUTB.
9
V DD
+12V power supply
10
C+
Positive terminal for the polarized C1 charge-pump capacitor.
11
T1INB
+3.3V to +5V TTL/CMOS logic level driver input for port B.
12
T2INB
+3.3V to +5V TTL/CMOS logic level driver input for port B.
13
T3INB
+3.3V to +5V TTL/CMOS logic level driver input for port B.
14
R1OUTB
+3.3V to +5V TTL/CMOS logic level receiver output for port B.
15
R2OUTB
+3.3V to +5V TTL/CMOS logic level receiver output for port B.
16
R3OUTB
+3.3V to +5V TTL/CMOS logic level receiver output for port B.
17
R4OUTB
+3.3V to +5V TTL/CMOS logic level receiver output for port B.
18
R5OUTB
+3.3V to +5V TTL/CMOS logic level receiver output for port B.
19
R5INB
RS-232 receiver input for port B.
20
R4INB
RS-232 receiver input for port B.
21
R3INB
RS-232 receiver input for port B.
22
R2INB
RS-232 receiver input for port B.
23
R1INB
RS-232 receiver input for port B.
24
T3OUTB
RS-232 driver output for port B.
25
T2OUTB
RS-232 driver output for port B.
26
T1OUTB
RS-232 driver output for port B.
27
Ground.
28
C-
Negative terminal for the polarized C1 charge-pump capacitor.
29
V-
-12V output generated by the charge pump at the negative terminal
of the polarized C2 charge-pump capacitor.
30
GND
Table 1. Device Pin Description
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
NAME
FUNCTION
PIN NUMBER
T1OUTA
RS-232 driver output for port A.
31
T2OUTA
RS-232 driver output for port A.
32
T3OUTA
RS-232 driver output for port A.
33
R1INA
RS-232 receiver input for port A.
34
R2INA
RS-232 receiver input for port A.
35
R3INA
RS-232 receiver input for port A.
36
R4INA
RS-232 receiver input for port A.
37
R5INA
RS-232 receiver input for port A.
38
Table 1. Device Pin Description (continued)
R5OUTA
R4OUTA
1
38
R5INA
2
37
R4INA
R3OUTA
3
36
R3INA
R2OUTA
R1OUTA
4
5
35 R2INA
34 R1INA
T3INA
6
T2INA
7
33 T3OUTA
32 T2OUTA
T1INA
8
31 T1OUTA
STBY
9
30 V-
SP2209E
VDD 10
29
C-
C+ 11
28
GND
T1INB 12
27
T1OUTB
T2INB 13
26 T2OUTB
25 T3OUTB
T3INB 14
24
R1OUTB 15
R1INB
R2OUTB
16
R3OUTB
17
23 R2INB
22 R3INB
R4OUTB 18
21 R4INB
R5OUTB 19
20
R5INB
Figure 1. SP2209E Pinout Configuration
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
+12V
+
10
VDD
STBY
11 C+
0.1µF
+
TTL/CMOS
INPUTS
C1
SP2209E
V-
9
+
C2
29 C-
GND
28
8 T1INA 400KΩ
T1OUTA
7 T2INA 400KΩ
T2OUTA 32
6 T3INA 400KΩ
T3OUTA
33
R1INA
34
R2INA
35
R3INA
36
R4INA
37
R5INA
38
T1OUTB
27
5 R1OUTA
+3.3V
0.1µF
30
+
0.1µF
0.1µF
31
RS-232
OUTPUTS
5KΩ
4 R2OUTA
5KΩ
TTL/CMOS
OUTPUTS
3 R3OUTA
5KΩ
2 R4OUTA
RS-232
INPUTS
5KΩ
1
R5OUTA
5KΩ
12 T1INB
TTL/CMOS
INPUTS
400KΩ
13 T2INB 400KΩ
T2OUTB 26
14 T3INB 400KΩ
T3OUTB 25
15 R1OUTB
R1INB
24
R2INB
23
R3INB
22
R4INB
21
R5INB
20
RS-232
OUTPUTS
5KΩ
16 R2OUTB
5KΩ
TTL/CMOS
OUTPUTS
17 R3OUTB
5KΩ
18 R4OUTB
RS-232
INPUTS
5KΩ
19 R5OUTB
5KΩ
Figure 2. SP2209E Typical Operating Circuit
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
DESCRIPTION
THEORY OF OPERATION
The SP2209E device is a rugged, high ESD,
complete dual RS-232 port integrated onto a
single integrated circuit. Six drivers and ten
receivers provide a dual port solution fully
meeting the EIA/TIA-232 and ITU-T V.28/V.24
communication protocols and can be
implemented in applications such as personal
desktop computers and workstations. Refer to
Figure 2 for a typical operating circuit.
The SP2209E device is made up of four
basic circuit blocks: 1. Drivers, 2. Receivers,
3. the Sipex proprietary charge pump, and
4. Standby circuitry.
Drivers
The drivers are inverting level transmitters
that convert TTL or CMOS logic levels to
EIA/TIA-232 levels with an inverted sense
relative to the input logic levels. With VDD =
+12V, the typical RS-232 output voltage swing
is +9V with no load and +5V minimum fully
loaded. Unused driver input may be left
unconnected with an internal pull-up resistor
pulling the inputs high forcing the driver outputs
into a low state. The driver outputs are protected
against infinite short-circuits to ground without
degradation in reliability. These drivers comply
with the EIA-TIA-232F and all previous
RS-232 versions.
Features include high transmission rates, low
power consumption, space saving package
dimensions, and compatibility with the EU
directive on electromagnetic compatibility.
EM compatibility includes protection against
radiated and conducted interference including
high levels of electrostatic discharge. This device
is ideal for operation in electrically harsh
environments or where RS-232 cables are
frequently being plugged and unplugged. This
device is also immune to high RF field strengths
without special shielding precautions. Emissions
are also controlled to within very strict limits.
The drivers typically can operate at a minimum
data rate of 460kbps fully loaded with 3KΩ in
parallel with 1000pF, ensuring compatibility
with PC-to-PC communication software. The
SP2209E device is ideal for the new generation
modem standards which require data rates greater
than 460kbps. Refer to Figures 3 and 5 for driver
propagation delay test circuit and waveforms,
respectively.
The SP2209E device features the inverter
portion of Sipex's proprietary and patented
(U.S. 5,306,954) on-board charge pump
circuitry that generates a -9V voltage level from
a single +12V power supply. The SP2209E
device can operate at data rates of at least
460kbps fully loaded.
Receivers
Its low power CMOS operation makes the
SP2209E device an ideal choice for power
sensitive designs. The SP2209E device has two
receivers, one for each RS-232 port, that
remains active in the standby mode to allow the
monitoring of peripheral devices while the rest
of the system is in a power-saving standby
mode. This allows the SP2209E device to wake
up the entire system when any communication
is initiated in peripheral devices. The SP2209E
device has a low standby current of 100µA.
SP2209E DS/06
The receivers convert EIA/TIA-232 levels to
TTL or CMOS logic output levels. Should an
unused receiver input be left unconnected, an
internal 5kΩ pulldown resistor to ground will
commit the output of the receiver to a HIGH
state. Receiver inputs are also protected
against overvoltages of up to +15V. Refer to
Figures 4 and 6 for receiver propagation delay test
circuit and waveforms, respectively.
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SP2209E High ESD Dual Port RS-232 Transceivers
7
© Copyright 2000 Sipex Corporation
VIN
A
VIN
VOUT
TX
3kΩ
A
VOUT
RX
150pF
1000pF
C
C
Figure 4. Receiver Propagation Delay and Transition
Time Test Circuit
Figure 3. Driver Propagation Delay and Transition
Time Test Circuit
Data Transmission Rate > 460kbps, tF<5ns, tR<5ns
DRIVER
INPUT
+3V
1.5V
0V
1.5V
tPHL
V
DRIVER OH
OUTPUT VOL
tPLH
+3V
0V
+3V
-3V
-3V
tF
tR
tSKEW = | tPHL - tPLH |
Figure 5. Driver Propagation Delays
Data Transmission Rate > 460kbps, tF<200ns, tR<200ns
+3V
RECEIVER
INPUT -3V
V
RECEIVER OH
OUTPUT VOL
0V
0V
tPHL
tPLH
80%
50%
80%
20%
tF
20%
tR
tSKEW = | tPHL - tPLH |
Figure 6. Receiver Propagation Delays
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
One receiver in each RS-232 port can be kept
active by a low current, +3.3V to +5V power
supply while the rest of the channels are powered down. This allows the SP2209E device to
monitor peripheral devices while the rest of the
system is in a power-saving standby mode.
The SP2209E device can be implemented as a
power management device to wake up the entire
system when any communication is initiated in
peripheral devices. The SP2209E device has a
low standby current of 100µA.
Charge Pump
The charge pump is a Sipex–patented design
(U.S. 5,306,954) and uses a unique approach
compared to older less–efficient designs.
The charge pump requires two external
capacitors using a two–phase voltage
shifting technique with a 200kHz internal
oscillator to attain a -9V power supply. Refer to
Figure 7 for the internal charge pump circuit.
The internal power supply consists of a charge
pump that provides output voltages of at least
+5V regardless of the input voltage (VDD). This
is important to maintain compliant RS-232
levels regardless of power supply fluctuations.
A description of each phase follows.
Since receiver input is usually from a transmission
line where long cable lengths and system
interference can degrade the signal, the inputs
have a typical hysteresis margin of 300mV.
This ensures that the receiver is virtually
immune to noisy transmission lines and inputs
with slow transition times.
VC2- = -VDD
VDD
S3
S1
C2
C1
S2
S4
C2-
Figure 7. Charge Pump Circuit
Figure 8. Charge Pump Waveforms
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SP2209E High ESD Dual Port RS-232 Transceivers
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Phase 1
— VDD charge storage — S1 and S2 are closed.
S3 and S4 are open. During this phase of the
clock cycle, the positive side of capacitor, C1, is
connected to VDD. The negative side of C1 is
connected to GND. C1 is charged to +VDD.
VDD
Internal
Shutdown
Signal
Phase 2
— VDD transfer — S1 and S2 are open. S3 and
S4 are closed. The negative side of the capacitor,
C2, is connected to C2-. The positive side of C2
is connected to GND. This transfers a negative
generated voltage to C2. A negative voltage is
built up on the negative side of C2 with each
cycle of the oscillator. If the current drawn is
small, the output voltage at C2- will be close to
-VDD. As the current drawn at C2- increases, the
output voltage will decrease in magnitude. The
charge pump cycle will continue as long as the
operational conditions for the internal oscillator
are present. Refer to Figure 8 for the internal
charge pump waveforms.
Figure 9. Internal Standby Detection Circuit
discharges and associated transients. The
improved ESD tolerance is at least +15kV
without damage nor latch-up.
There are different methods of ESD testing
applied:
a) MIL-STD-883, Method 3015.7
b) EN61000-4-2 Air-Discharge
c) EN61000-4-2 Direct Contact
Standby Circuitry
The SP2209E device incorporates power
saving, on board standby circuitry. The standby
current is typically less than 100µA.
The SP2209E device automatically enters a
standby mode when the VDD power supply is
removed. An internal comparator generates an
internal shutdown signal that disables the
internal oscillator disengaging the charge pump.
Refer to Figure 9 for the internal standby
detection circuit.
The Human Body Model has been the generally
accepted ESD testing method for semiconductors.
This method is also specified in MIL-STD-883,
Method 3015.7 for ESD testing. The premise of
this ESD test is to simulate the human body’s
potential to store electro-static energy and
discharge it to an integrated circuit. The
simulation is performed by using a test model as
shown in Figure 10. This method will test the
IC’s capability to withstand an ESD transient
during normal handling such as in manufacturing
areas where the ICs tend to be handled frequently.
The inverted output V- goes to ground. All
driver outputs are disabled. The inputs of
receivers 1 through 4 for both ports A and B are
at high impedance. Receiver 5 for both ports A
and B remain fully active as power management
receiver lines to system peripherals that may
come online during the standby mode.
The EN61000-4-2, formerly IEC801-2, is
generally used for testing ESD on equipment and
systems. For system manufacturers, they must
guarantee a certain amount of ESD protection
since the system itself is exposed to the outside
environment and human presence. The premise
with EN61000-4-2 is that the system is required
to withstand an amount of static electricity when
ESD is applied to points and surfaces of the
ESD Tolerance
The SP2209E device incorporates ruggedized
ESD cells on all driver output and receiver input
pins. The ESD structure is improved over our
previous family for more rugged applications
and environments sensitive to electro-static
SP2209E DS/06
VSTBY
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
equipment that are accessible to personnel during
normal usage. The transceiver IC receives most
of the ESD current when the ESD source is
applied to the connector pins. The test circuit for
EN61000-4-2 is shown on Figure 11. There are
two methods within EN61000-4-2, the Air
Discharge method and the Contact Discharge
method.
holding the equipment. The current is transferred
on to the keypad or the serial port of the equipment
directly and then travels through the PCB and finally
to the IC.
The circuit model in Figures 10 and 11 represent
the typical ESD testing circuit used for all three
methods. The CS is initially charged with the DC
power supply when the first switch (SW1) is on.
Now that the capacitor is charged, the second
switch (SW2) is on while SW1 switches off. The
voltage stored in the capacitor is then applied
through RS, the current limiting resistor, onto the
device under test (DUT). In ESD tests, the SW2
switch is pulsed so that the device under test
receives a duration of voltage.
With the Air Discharge Method, an ESD voltage
is applied to the equipment under test (EUT)
through air. This simulates an electrically charged
person ready to connect a cable onto the rear of
the system only to find an unpleasant zap just
before the person touches the back panel. The
high energy potential on the person discharges
through an arcing path to the rear panel of the
system before he or she even touches the system.
This energy, whether discharged directly or
through air, is predominantly a function of the
discharge current rather than the discharge
voltage. Variables with an air discharge such as
approach speed of the object carrying the ESD
potential to the system and humidity will tend to
change the discharge current. For example, the
rise time of the discharge current varies with the
approach speed.
For the Human Body Model, the current limiting
resistor (RS) and the source capacitor (CS) are
1.5kΩ an 100pF, respectively. For EN61000-4-2,
the current limiting resistor (RS) and the source
capacitor (CS) are 330Ω an 150pF, respectively.
The higher CS value and lower RS value in the
EN61000-4-2 model are more stringent than the
Human Body Model. The larger storage capacitor
injects a higher voltage to the test point when
SW2 is switched on. The lower current limiting
resistor increases the current charge onto the test
point.
The Contact Discharge Method applies the ESD
current directly to the EUT. This method was
devised to reduce the unpredictability of the
ESD arc. The discharge current rise time is
constant since the energy is directly transferred
without the air-gap arc. In situations such as
hand held systems, the ESD charge can be directly
discharged to the equipment from a person already
APPLICATIONS
With six drivers and ten receivers, the SP2209E
device is ideal for applications requiring two
RS-232 ports such as in desktop or portable
computers. Refer to Figure 13. For typical DB9
serial ports for Data Terminal Equipment (DTE)
RSS
R
RC
C
SW2
SW2
SW1
SW1
CSS
DC Power
Source
Device
Under
Test
Figure 10. ESD Test Circuit for Human Body Model
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SP2209E High ESD Dual Port RS-232 Transceivers
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© Copyright 2000 Sipex Corporation
Contact-Discharge Module
R
RSS
RC
C
RV
SW2
SW2
SW1
SW1
Device
Under
Test
CSS
DC Power
Source
RS and RV add up to 330Ω
330Ω ffor
or IEC1000-4-2.
Figure 11. ESD Test Circuit for EN61000-4-2
A standard serial mouse can be powered from
the SP2209E drivers. Two driver outputs
connected in parallel and set to VOH can be used
to supply power to the V+ pin of the mouse. The
third driver is set to VOL to link current from the
V- terminal. Typical mouse specifications are
10mA at +6V and 5mA at -6V.
to Data Circuit Terminating Equipment (DCE)
interface implementation, 2 data lines, TxD and
RxD, and 6 control lines, RTS, DTR, DSR,
CTS, and RI, are required. The straight-through
pinout for data lines in the SP2209E device
allows a simplified PCB layout allowing ground
lines to separate the signal lines and ground
planes to be placed beneath the IC without the
complication of a multi-layer PCB layout.
LapLink Compatibility
The SP2209E can operate up to 460kbps data
rate under maximum driveload conditions of
CL = 1000pF and RL = 3KΩ at minimum power
supply voltages.
i➙
A receiver from each port, R5INA and R5INB,
are active while the rest of the channels are
powered down. This allows the SP2209E
device to monitor peripheral devices while the
rest of the system is in a power-saving standby
mode. Fail-Safe receiver outputs are pulled high
if the receiver inputs are left unconnected or at
zero input. The SP2209E device can be
implemented as a power management device to
wake up the entire system when any
communication is initiated in peripheral
devices. The SP2209E device has a low standby
current of 100µA.
30A
15A
0A
t=0ns
t=30ns
t➙
Figure 12. ESD Test Waveform for EN61000-4-2
DEVICE PIN
TESTED
HUMAN BODY
MODEL
Air Discharge
Driver Outputs
Receiver Inputs
+15kV
+15kV
+15kV
+15kV
IEC1000-4-2
Direct Contact
+8kV
+8kV
Level
4
4
Table 2. Transceiver ESD Tolerance Levels
SP2209E DS/06
http://www.tosharp.cn
SP2209E High ESD Dual Port RS-232 Transceivers
12
© Copyright 2000 Sipex Corporation
+3.3V to +5V
9
+
STBY
0.1µF
29
DCD
5
V-
0.1µF
28
R1INA
34
DCD
R2INA
35
DSR
R3INA
36
RXD
C-
GND
R1OUTA
30
+
0.1µF
VDD
SP2209E
C+
+
11
+
+12V
10
0.1µF
5KΩ
DSR
Super
I/O Chip
4
R2OUTA
DB-9
Connector
COM1
5KΩ
RXD
3
R3OUTA
5KΩ
RTS
8
T1INA
400KΩ
T1OUTA
31
RTS
6
TXD
7
T2INA
400KΩ
T2OUTA
32
TXD
7
CTS
2
R4OUTA
R4INA
37
CTS
8
9
5KΩ
DTR
RI
6 T3INA
1
400KΩ
R5OUTA
T3OUTA
33
DTR
R5INA
38
RI
1
2
3
4
5
5KΩ
DCD
15
R1OUTB
R1INB
24
DCD
R2INB
23
DSR
R3INB
22
RXD
5KΩ
DSR
16
R2OUTB
DB-9
Connector
COM2
5KΩ
RXD
17
R3OUTB
5KΩ
RTS
12
T1INB
400KΩ
T1OUTB 27
RTS
6
TXD
13
T2INB
400KΩ
T2OUTB 26
TXD
7
CTS
18
R4OUTB
R4INB
8
21
CTS
9
5KΩ
DTR
14
T3INB
RI
19
R5OUTB
T3OUTB 25
400KΩ
R5INB
20
1
2
3
4
5
DTR
RI
5KΩ
Figure 13. Dual Serial Port Application with Two DB9 Connectors
SP2209E DS/06
http://www.tosharp.cn
SP2209E High ESD Dual Port RS-232 Transceivers
13
© Copyright 2000 Sipex Corporation
PACKAGE:
PLASTIC THIN SMALL
OUTLINE
(TSSOP)
E2
E
D
A
Ø
e
B
A1
L
DIMENSIONS
(mm)
Minimum/Maximum
SP2209E DS/06
38–PIN
A
(- /1.10)
A1
(0.05/0.15)
B
(0.17/0.27)
D
(9.60/9.80)
E
(4.30/4.50)
e
(0.50 BSC)
E2
(3.20 BSC)
L
(0.50/0.75)
Ø
0°/8°
http://www.tosharp.cn
SP2209E High ESD Dual Port RS-232 Transceivers
14
© Copyright 2000 Sipex Corporation
ORDERING INFORMATION
Model
SP2209EEY
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Temperature Range
-40°C to +85°C
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Package Types
38-pin TSSOP
Please consult the factory for pricing and availability on a Tape-On-Reel option.
Corporation
SIGNAL PROCESSING EXCELLENCE
Sipex Corporation
Headquarters and
Sales Office
22 Linnell Circle
Billerica, MA 01821
TEL: (978) 667-8700
FAX: (978) 670-9001
e-mail: sales@sipex.com
Sales Office
233 South Hillview Drive
Milpitas, CA 95035
TEL: (408) 934-7500
FAX: (408) 935-7600
Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the
application or use of any product or circuit described hereing; neither does it convey any license under its patent rights nor the rights of others.
SP2209E DS/06
http://www.tosharp.cn
SP2209E High ESD Dual Port RS-232 Transceivers
15
© Copyright 2000 Sipex Corporation