TGA4535-SM
K-Band Power Amplifier
Product Description
The TriQuint TGA4535-SM is a K-Band Power Amplifier
with integrated power detector. The TGA4535-SM
operates from 21.2 – 23.6 GHz and is designed using
TriQuint’s power pHEMT production process.
The TGA4535-SM typically provides 34 dBm of saturated
output power with small signal gain of 22 dB. Third Order
Intercept is 40 dBm at 23 dBm SCL.
The TGA4535-SM is available in a low-cost, surface
mount 28 lead 5x5 QFN package and is ideally suited for
Point-to-Point Radio.
28 lead 5x5mm QFN package
Lead-free and RoHS compliant
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
RF IN
VD3
VREF
27
VD2
28
26
25
24
23
22
1
21
2
20
3
19
4
18
5
17
6
16
7
15
9
VG1
8
10
11
VG3
Frequency Range: 21.2 – 23.6 GHz
Power: 34 dBm Psat, 32 dBm P1dB
Gain: 22 dB
TOI: 40 dBm at 23 dBm/tone
Integrated Power Detector
Bias: Vd = 6 V, Idq = 1430 mA, Vg = -0.7 V Typical
Package Dimensions: 5.0 x 5.0 x 1.3 mm
VD1







Functional Block Diagram
VG2
Product Features
12
13
VDET
RF OUT
14
Applications
Ordering Information
 Point-to-Point Radio
 K-band Sat-Com
Part
Description
TGA4535-SM
TGA4535-SM-T/R
TGA4535-SM EVB
Waffle Tray
500 pieces on a 7” reel (standard)
Evaluation Board
Data Sheet Rev. D, March 5 2018
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TGA4535-SM
K-Band Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
Drain to Gate Voltage, VD – VG
Drain Voltage (VD)
Drain Current (ID)
Gate Voltage Range (VG)
Gate Current (IG)
Power Dissipation, PDISS
RF Input Power, CW, T = 25 °C
Channel Temperature, TCH
Mounting Temperature (30 seconds)
Storage Temperature
Parameter
10 V
6.5 V
3.0 A
-3 to 0 V
-12 to +110 mA
20 W
25 dBm
200 °C
260 °C
−40 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Value
Drain Voltage
Drain Current, Quiescent (IDQ) (1)
Drain Current, RF (IDD_Drive)
Gate Voltage, Typical Range (VG)
Gate Current, RF (IG_Drive) Typical
Operating Temperature Range
6V
1430 mA
See chart page 3
−0.4 to −0.8 V
25 mA
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
(1) Min IDQ is 400mA. For large signal operation, stability is
degraded for IDQ < 400mA
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical, Z0 = 50 Ω
Parameter
Min
Frequency
21.2
Typical
Max
Units
23.6
GHz
Small Signal Gain
22
dB
Input Return Loss
10
dB
Output Return Loss
10
dB
Output Power @ Saturation
34
dBm
Output Power @ 1 dB Gain Compression
32
dBm
Output TOI @ 23 dBm/Tone Pout/tone
40
dBm
Gain Temperature Coefficient
-0.02
dBm/°C
Power Temperature Coefficient
-0.005
dBm/°C
Data Sheet Rev. D, March 5 2018
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TGA4535-SM
K-Band Power Amplifier
Performance Plots
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical
S-Parameters vs. Frequency
S-Parameters vs. Frequency
30
-30
30
20
-10
IRL
0
ORL
20
21
22
23
24
-10
ORL
IRL
15
0
20
5
20
30
0
21.2
5
19
20
10
10
18
-20
10
10
0
25
25
30
21.6
22.0
22.4
22.8
Output Power vs. Frequency vs. Bias
23.6
Output Power vs. Frequency vs. Bias
36
36
Psat
Psat
35
Output Power (dBm)
35
34
33
32
P1dB
31
30
29
34
33
32
P1dB
31
30
29
28
20
21
22
23
Frequency (GHz)
24
28
21.2
25
21.2 GHz Power, Gain, and Current vs. Input Power
40
35
2250
30
2000
25
1750
20
1500
Output Power (dBm), Gain (dB)
2500
Pout at 21.2 GHz
Gain at 21.2 GHz
Current at 21.2 GHz
15
-5
0
5
10
Input Power (dBm)
Data Sheet Rev. D, March 5 2018
15
23.2
23.6
2500
Pout at 23.6 GHz
Gain at 23.6 GHz
35
2250
30
2000
25
1750
20
1500
Current at 23.6 GHz
15
1250
-10
22.0
22.4
22.8
Frequency (GHz)
23.6 GHz Power, Gain, and Current vs. Input Power
Drain Current (mA)
40
21.6
20
1250
-10
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Drain Current (mA)
Output Power (dBm)
23.2
Frequency (GHz)
Frequency (GHz)
Output Power (dBm), Gain (dB)
Return Loss (dB)
-20
Gain (dB)
25
15
-30
Gain
Return Loss (dB)
Gain (dB)
Gain
-5
0
5
10
Input Power (dBm)
15
20
www.qorvo.com
TGA4535-SM
K-Band Power Amplifier
Performance Plots
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical
Power Added Efficiency vs. Frequency
Power Detector vs. Output Power vs. Frequency
30
10
VDIFF (V) = VREF - VDET
Psat
PAE (%)
25
20
15
10
P1dB
5
22.5 GHz
1
23.6 GHz
0.1
21.7 GHz
0.01
0
20
21
22
23
Frequency (GHz)
24
0
25
Output TOI vs. Frequency vs. Output Power / Tone
15
20
25
Output Power (dBm)
30
35
Output TOI vs. Output Power / Tone
20 dBm / Tone
45
44
43
Output TOI (dBm)
44
43
42
41
40
39
23 dBm / Tone
38
42
41
40
21.2GHz
21.5GHz
22GHz
22.5GHz
23GHz
23.6GHz
39
38
37
36
37
35
36
19
20
21
22
23
24
Frequency (GHz)
25
14
26
IM3 and IM5 vs. Output Power / Tone vs. Frequency
15
16
17 18 19 20 21 22 23
Output Power (dBm / Tone)
24
25
Noise Figure vs. Frequency
-20
11
IM3 21.2 GHz
-25
IM3 22.5 GHz
-30
10
IM3 23.6 GHz
-35
IM5 21.2 GHz
-40
IM5 22.5 GHz
-45
IM5 23.6 GHz
Noise Figure (dB)
IM3 and IM5 (dBc)
10
45
46
Output TOI (dBm)
5
-50
-55
-60
9
8
7
6
-65
5
21.2
-70
10
12
14
16 18 20 22 24 26
Output Power (dBm/Tone)
Data Sheet Rev. D, March 5 2018
28
30
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21.6
22.0
22.4
22.8
Frequency (GHz)
23.2
23.6
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TGA4535-SM
K-Band Power Amplifier
Performance Plots
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical
Gain vs. Frequency vs. Bias
25
Noise Figure vs. Frequency vs. Bias
14
5V 1430 mA
13
15
Noise Figure (dB)
Gain (dB)
20
6V 1430 mA
6V 1260 mA
10
6V 1110 mA
6V 945 mA
10
9
8
5V 1430 mA
6
6V 945 mA
6V 1110 mA
5
0
18
19
20
21
22
23
Frequency (GHz)
24
18
25
P1dB vs. Frequency vs. Bias
19
20
21
22
23
Frequency (GHz)
24
25
Saturated Power vs. Frequency vs. Bias
36
36
6V 1430 mA
6V 1260 mA
6V 1100 mA
34
33
32
31
30
5V 1430 mA
29
6V 1430 mA
6V 1260 mA
35
Saturated Power (dBm)
35
P1dB (dBm)
6V 1430 mA
11
7
5
6V 945 mA
34
33
32
6V 1100 mA
31
30
5V 1430 mA
29
28
6V 945 mA
28
20
21
22
23
Frequency (GHz)
24
25
20
23 dBm Output Power / Tone
44
43
IM3 (dBc)
42
41
40
39
5V 1430 mA
6V 945 mA
6V 1110 mA
6V 1260 mA
6V 1430 mA
38
37
36
35
20
21
22
23
Frequency (GHz)
Data Sheet Rev. D, March 5 2018
24
21
22
23
Frequency (GHz)
24
25
IM3 vs. Output Power / Tone vs. Bias
Output TOI vs. Frequency vs. Bias
45
Output TOI (dBm)
6V 1260 mA
12
25
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
22.5 GHz
5V 1430 mA
6V 945 mA
6V 1110 mA
6V 1260 mA
6V 1430 mA
10
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12
14
16 18 20 22 24 26
Output Power (dBm/Tone)
28
30
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TGA4535-SM
K-Band Power Amplifier
Performance Plots
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical
Output TOI vs. Frequency vs. Temperature
Gain vs. Frequency vs. Temperature
45
30
+25 C
-40 C
28
43
Output TOI (dBm)
26
Gain (dB)
24
22
20
18
16
14
42
41
40
39
38
-40 C
37
+85C
12
+85C
+25 C
36
10
35
18
19
20
21
22
23
Frequency (GHz)
24
25
20
P1dB vs. Frequency vs. Temperature
36
35
Saturated Power (dBm)
-40 C
33
32
31
30
29
22
23
Frequency (GHz)
24
25
-40 C
35
+25 C
34
21
Saturated Power vs. Frequency vs. Temperature
36
P1dB (dBm)
23 dBm Output Power / Tone
44
34
33
32
+25 C
+85 C
31
30
29
+85 C
28
28
20
21
22
23
Frequency (GHz)
24
25
20
21
22
23
Frequency (GHz)
24
25
Power Detector vs. Output Power vs. Temperature
VDIFF (V) = VREF - VDET
10
22.5 GHz
+25 C
1
-40 C
0.1
+85C
0.01
0
Data Sheet Rev. D, March 5 2018
5
10
15
20
25
Output Power (dBm)
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30
35
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TGA4535-SM
K-Band Power Amplifier
Pin Configuration and Description
Pin No.
Label
Description
Backside paddle. Multiple vias should be employed to minimize
inductance and thermal resistance; see ‘PCB Mounting Pattern’ on
page 10 for suggested footprint
No internal connection; Recommend grounding these pins for best
RF performance. See ‘PCB Mounting Pattern’ on page 10 for
suggested footprint
1,7,8,14,15,21,22,28,29
GND
2,3,5,6,16,17,19
N/C
4
RF IN
RF input, matched to 50 ohms
9
VG1
Stage 1 gate voltage (1)
10
VG2
Stage 2 gate voltage (1)
11
VG3
Stage 3 gate voltage (1)
12, 27
N/C
No internal connection; May be grounded on PCB or left open
13
GND
Internally connected to GND. May be grounded on the PCB or left
open
18
RF OUT
RF output, matched to 50 ohms
20
VDET
Detector diode output voltage. Varies with RF output power
23
VREF
Reference diode output voltage
24
VD3
Stage 3 drain voltage (1)
25
VD2
Stage 2 drain voltage (1)
26
VD1
Stage 1 drain voltage (1)
(1) Bias bypass network is required; see ‘Application Circuit’ on page 8 as an example
Data Sheet Rev. D, March 5 2018
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TGA4535-SM
K-Band Power Amplifier
Applications Circuit
VD
C1
1 F
C7
1 F
C8
1 F
C9
1 F
C2
1 F
C3
1 F
R5
40 K
(VREF)
28
27
26
25
24
23
+
22
1
21
2
20
3
19
4
18
5
17
6
16
7
15
(VDET)
RF IN
See Note A
8
9
10
11
12
13
VDIFF
R4
40 K
See Note A
RF OUT
14
R1
10 Ohm
VG
C4
1 F
C10
1 F
R2
10 Ohm
C5
1 F
C11
1 F
R3
10 Ohm
C12
1 F
C6
1 F
Note A: 50 Ω Microstrip Transmission Line.
Bias Up Procedure
Bias Down Procedure
1. Set ID limit to 2800 mA, IG limit to 50 mA
1. Turn off RF signal
2. Set VG to −1.5 V
2. Reduce VG to −1.5 V. Ensure IDQ ~ 0 mA
3. Set VD +6 V
4. Adjust VG more positive until IDQ = 1430 mA
(VG ~ −0.4 V to -0.8 V typical range)
5. Apply RF signal
3. Set VD to 0 V
Data Sheet Rev. D, March 5 2018
4. Turn off VD supply
5. Turn off VG supply
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TGA4535-SM
K-Band Power Amplifier
Evaluation Board Layout
Board material is Rogers Corp. 4003 0.008” thickness with ½ oz copper cladding.
For further technical information, refer to the TGA4534-SM Product Information page.
Bill of Material
Ref. Des.
Value
U1
Description
Manuf. Part Number
K Band Power Amplifier
Qorvo
C1 thru C6
1.0 µF
Cap, 0402, 25 V, 10%, X5R SMD
Various
C7 thru C12
1.0 µF
Cap, 0805, 25 V, 10%, X5R SMD
Various
R1, R2, R3
10 Ω
Res, 0402, 0.06 W, 5%, SMD
Various
R4, R5
40 kΩ
Res, 0402, 0.06 W, 5%, SMD
Various
Data Sheet Rev. D, March 5 2018
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TGA4534-SM
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TGA4535-SM
K-Band Power Amplifier
Package Marking & Dimensions
PCB Mounting Pattern
Notes:
1.
2.
The pad pattern shown has been developed and tested for optimized assembly at Qorvo. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company,
careful process development is recommended.
Ground vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .25 mm (.010”).
Data Sheet Rev. D, March 5 2018
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TGA4535-SM
K-Band Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC)
Value
Units
5.75
°C/W
134
°C
6.6E+6
Hrs
5.75
°C/W
143
°C
2.4E+6
Hrs
(1)
Channel Temperature (TCH) (No RF Drive)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF Drive)
Tbase = 85°C,
VD = 6 V, IDQ = 1430 mA
PDISS = 8.6 W
Tbase = 85°C
VD = 6 V, IDD = 2100 mA
POUT = 34.2 dBm, PDISS = 10 W
Median Lifetime (TM)
Notes:
1. Thermal resistance is measured to back of the package.
Median Lifetime
Test Conditions: VD = 6 V
Failure Criteria = 10% reduction in ID_MAX
Median Lifetime (Tm) vs. Channel Temperature (Tch)
Median Lifetime, Tm (Hours)
1.0E+15
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
FET5
1.0E+04
25
50
75
100
125
150
175
200
Channel Temperature, Tch (°C)
Data Sheet Rev. D, March 5 2018
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TGA4535-SM
K-Band Power Amplifier
Tape and reel Information
Standard T/R size = 500 pieces on a 7” reel
Vendor: Tek-Pak P/N QFN0500x0500F-L500
CARRIER AND COVER TAPE DIMENSIONS
Part
Feature
Cavity
Length
Width
Depth
Pitch
Width
Width
Cover Tape
Carrier Tape
Data Sheet Rev. D, March 5 2018
Symbol
Size (in)
Size (mm)
A0
B0
K0
P1
C
W
0.209
0.209
0.064
0.315
0.362
0.472
5.3
5.3
1.65
8.00
9.2
12.00
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TGA4535-SM
K-Band Power Amplifier
Solderability
Compatible with the latest version of J-STD-020, Lead-free solder, 260 °C
Recommended Soldering Temperature Profile
Data Sheet Rev. D, March 5 2018
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TGA4535-SM
K-Band Power Amplifier
Handling Precautions
Parameter
ESD – Human Body Model (HBM)
Rating
Standard
Class 0
ANSI/ESD/JEDEC JS-001
ESD – Charged Device Model (CDM)
Class C3
JEDEC JESD22-C101
MSL – Moisture Sensitivity Level
Level 3
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)





Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Qorvo Green
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
For technical questions and application information:
Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. D, March 5 2018
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