Texas Instruments | THS7530-Q1 High-Speed, Fully Differential, Continuously Variable Gain Amplifier | Datasheet | Texas Instruments THS7530-Q1 High-Speed, Fully Differential, Continuously Variable Gain Amplifier Datasheet

Texas Instruments THS7530-Q1 High-Speed, Fully Differential, Continuously Variable Gain Amplifier Datasheet
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THS7530-Q1
SLOS932 – DECEMBER 2015
THS7530-Q1 High-Speed, Fully Differential, Continuously
Variable Gain Amplifier
1 Features
•
•
•
3 Description
1
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM Classification Level 2
– Device CDM Classification Level C6
Low Noise: Vn = 1.1 nV/√Hz,
Noise Figure = 9 dB
Low Distortion:
– HD2 = –65 dBc, HD3 = –61 dBc at 32 MHz
– IMD3 = –62 dBc, OIP3 = 21 dBm at 70 MHz
300-MHz Bandwidth
Continuously Variable Gain Range: 11.6 dB
to 46.5 dB
Gain Slope: 38.8 dB/V
Fully Differential Input and Output
Output Common-Mode Voltage Control
Output Voltage Limiting
Variable Gain in Instrumentation
The THS7530-Q1 device is fabricated using Texas
Instruments' state-of-the-art BiCom III SiGe
complementary bipolar process. The THS7530-Q1
device is a DC-coupled, wide bandwidth amplifier with
voltage-controlled gain. The amplifier has highimpedance differential inputs and low-impedance
differential outputs with high-bandwidth gain control,
output common-mode control, and output voltage
clamping.
Signal-channel performance is exceptional with
300-MHz bandwidth, and third harmonic distortion of
–61 dBc at 32 MHz with 1-VPP output into 400 Ω.
Gain control is linear in dB with 0 V to 0.9 V varying
the gain from 11.6 dB to 46.5 dB with 38.8-dB/V gain
slope.
Output voltage limiting is provided to limit the output
voltage swing and to prevent saturating following
stages.
The device is characterized for operation over the
automotive temperature range, –40°C to +125°C.
2 Applications
•
•
•
Device Information(1)
Time Gain Amplifiers in Ultra Sound, Sonar,
and Radar
Automatic Gain Control in Communication
and Video
System Gain Calibration in Communications
PART NUMBER
THS7530-Q1
PACKAGE
HTSSOP (14)
BODY SIZE (NOM)
5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Circuit
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
24.9 W
6.8 mF
33 pF
24.9 W
VCL+
VCL-
0.1 mF
24.9 W
0.1 mF
VIN+
VOUT0.1 mF
VOCM
PD
THS7530
0.1 mF
VOUT+
VIN24.9 W
VG-
0.1 mF
33 pF
VS-
VG+
AGC Detect
VREF
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
THS7530-Q1
SLOS932 – DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: Main Amplifier..................
Package Thermal Data .............................................
Typical Characteristics ..............................................
7
Parameter Measurement Information ................ 10
8
Detailed Description ............................................ 11
8.3 Feature Description................................................. 11
8.4 Device Functional Modes........................................ 12
9
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application .................................................. 15
10 Power Supply Recommendations ..................... 17
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Examples................................................... 20
12 Device and Documentation Support ................. 22
12.1
12.2
12.3
12.4
12.5
12.6
7.1 Test Circuits ............................................................ 10
Device Support ....................................................
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2015
*
Initial release.
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5 Pin Configuration and Functions
PWP Package
14-Pin HTSSOP With PowerPAD™
Top View
VCL+
NC
1
14
NC
2
13 VCL-
VIN+
3
12
VIN-
4
11 VOUT-
VG+
5
10 VOUT+
VG-
6
9
VS+
PD
7
8
VS-
VOCM
Pin Functions
PIN
NAME
NC
NO.
1
2
I/O
DESCRIPTION
—
No internal connection
Power down, PD = logic low puts the device into low power mode; PD = logic high or open for normal
operation
PD
7
—
VCL–
13
I
Output negative clamp voltage input
VCL+
14
I
Output positive clamp voltage input
VG-
6
I
Gain setting negative input
VG+
5
I
Gain setting positive input
VIN–
4
I
Inverting amplifier input
VIN+
3
I
Noninverting amplifier input
VOCM
12
I
Output common-mode voltage input
VOUT–
11
O
Inverted amplifier output
VOUT+
10
O
Noninverted amplifier output
VS–
8
I
Negative amplifier power-supply input
VS+
9
I
Positive amplifier power-supply input
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range, unless otherwise noted. (1)
MAX
UNIT
VS+ – VS–
Supply voltage
MIN
5.5
V
VI
Input voltage
±VS
V
IO
Output current
65
mA
VID
Differential input voltage
±4
V
Continuous power dissipation
TJ
Tstg
(1)
(2)
See Thermal Information
Maximum junction temperature
150
°C
Maximum junction temperature for long term stability (2)
125
°C
150
°C
Storage temperature
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002 (1)
±2000
Charged-device model (CDM), per AEC Q100-011
±1000
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
[VS– to VS+]
TA
Supply voltage
MIN
NOM
MAX
4.5
5
5.5
UNIT
V
Input common mode voltage
[VS– to VS+] = 5 V
2.5
V
Output common mode voltage
[VS– to VS+] = 5 V
2.5
V
Operating free-air temperature
–40
125
°C
6.4 Thermal Information
THS7530
THERMAL METRIC (1)
PWP (HTSSOP)
UNIT
14 PINS
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
75.3
°C/W
35
RθJB
°C/W
Junction-to-board thermal resistance
28.9
°C/W
ψJT
Junction-to-top characterization parameter
1.6
°C/W
ψJB
Junction-to-board characterization parameter
28.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
3.2
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics: Main Amplifier
VS+ = 5 V, VS– = 0 V, VOCM = 2.5 V, VICM = 2.5 V, VG- = 0 V, VG+ = 1 V (maximum gain), TA = 25°C, AC performance measured
using the AC test circuit shown in Figure 16 (unless otherwise noted). DC performance is measured using the DC test circuit
shown in Figure 17 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
Small-signal bandwidth
All gains, PIN = –45 dBm
Slew rate (1)
1-VPP Step, 25% to 75%, minimum gain
Settling time to 1% (1)
1-VPP Step, minimum gain
Harmonic distortion, 2nd harmonic
300
MHz
1250
V/µs
11
ns
f = 32 MHz, VO(PP) = 1 V, RL(diff)= 400 Ω
–65
dBc
Harmonic distortion, 3rd harmonic
f = 32 MHz, VO(PP) = 1 V, RL(diff)= 400 Ω
–61
dBc
Third-order intermodulation distortion
PO = –10 dBm each tone, fC= 70 MHz,
200-kHz tone spacing
–62
dBc
Third-order output intercept point
fC= 70 MHz, 200-kHz tone spacing
21
dBm
Noise figure (with input termination)
Source impedance: 50 Ω
Total input voltage noise
f > 100 kHz
1.1
TA = 25°C
20
9
dB
nV/√Hz
DC PERFORMANCE—INPUTS
Input bias current
TA = –40°C to +125°C
Maximum input voltage
Common-mode rejection ratio
µA
40
Input bias current offset
Minimum input voltage
39
<150
Minimum gain, TA = 25°C
1.5
Minimum gain, TA = –40°C to +125°C
Minimum gain, TA = 25°C
Minimum gain, TA = –40°C to +125°C
pA
1.6
V
1.7
3.2
3.3
V
3.15
TA = 25°C
56
TA = –40°C to +125°C
44
Differential input impedance
114
dB
8.5 || 3
kΩ || pF
DC PERFORMANCE—OUTPUTS
Output offset voltage
Maximum output voltage high
Minimum output voltage low
Output current
All gains, TA = 25°C
±100
All gains, TA = –40°C to +125°C
TA = 25°C
3.5
V
3
TA = 25°C
1.5
TA = –40°C to +125°C
1.8
V
2
TA = 25°C
±16
TA = –40°C to +125°C
±16
Output impedance
mV
±480
3.25
TA = –40°C to +125°C
±410
±30
mA
15
Ω
32
MHz
OUTPUT COMMON-MODE VOLTAGE CONTROL
Small-signal bandwidth
Gain
1
Common-mode offset voltage
TA = 25°C
4.5
TA = –40°C to +125°C
mV
13.8
Minimum input voltage
1.75
Maximum input voltage
3.25
Input impedance
V/V
12
25 || 1
V
V
kΩ || pF
Default voltage, with no connect
2.5
V
Input bias current
<1
µA
0 to 1
V
GAIN CONTROL
Gain control differential voltage range
VG+
Minus gain control voltage
VG– – VS–
–0.6 to 0.8
V
Minimum gain
VG+ = 0 V
11.6
dB
Maximum gain
VG+ = 0.9 V
46.5
dB
Gain slope
VG+ = 0 V to 0.9 V
38.8
dB/V
(1)
Slew rate and settling time measured at amplifier output.
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Electrical Characteristics: Main Amplifier (continued)
VS+ = 5 V, VS– = 0 V, VOCM = 2.5 V, VICM = 2.5 V, VG- = 0 V, VG+ = 1 V (maximum gain), TA = 25°C, AC performance measured
using the AC test circuit shown in Figure 16 (unless otherwise noted). DC performance is measured using the DC test circuit
shown in Figure 17 (unless otherwise noted)
PARAMETER
Gain slope variation
Gain error
TEST CONDITIONS
MIN
VG+ = 0 V to 0.9 V
TYP
MAX
±1.5
VG+ = 0 V to 0.15 V
dB/V
±4
VG+ = 0.15 V to 0.9 V
UNIT
dB
±2.25
Gain control input bias current
<1
µA
Gain control input resistance
40
kΩ
15
MHz
Gain control bandwidth
Small signal –3 dB
VOLTAGE CLAMPING
Output voltages (VOUT±) relative to clamp
voltages (VCL±)
Device In voltage limiting mode, TA = 25°C
Clamp voltage (VCL±) input resistance
Device in voltage limiting mode
±25
Device In voltage limiting mode, TA = –40°C to +125°C
±40
±180
Clamp voltage (VCL±) limits
mV
3.3
kΩ
VS– to VS+
V
POWER SUPPLY
Specified operating voltage
Maximum quiescent current
Power supply rejection (±PSRR)
TA = 25°C
5
TA = –40°C to +125°C
5.5
5.5
TA = 25°C
40
TA = –40°C to +125°C
48
49
TA = 25°C
70
TA = –40°C to +125°C
45
77
V
mA
dB
POWER DOWN
TTL low = shut down, TA = 25°C
Enable voltage threshold
TTL low = shut down,
TA = –40°C to +125°C
Power-down quiescent current
Input current high
Input current low
V
1
TTL high = normal operation, TA = 25°C
Disable voltage threshold
1.4
1.4
TTL high = normal operation,
TA = –40°C to +125°C
1.65
TA = 25°C
0.35
TA = –40°C to +125°C
0.4
0.55
TA = 25°C
±9
TA = –40°C to +125°C
±16
±19
TA = 25°C
±109
TA = –40°C to +125°C
±116
±130
Input impedance
50 || 1
V
mA
µA
µA
kΩ || pF
Turnon time delay
Measured to 50% quiescent current
820
Turnoff time delay
Measured to 50% quiescent current
500
ns
Forward isolation in power down
80
dB
Input resistance in power down
>1
MΩ
16
kΩ
Output resistance in power down
ns
6.6 Package Thermal Data
(1)
(2)
6
PACKAGE
PCB
TA = 25°C
POWER RATING (1)
PWP (14-pin) (2)
See Layout.
3W
This data was taken using 2 oz trace and copper pad that is soldered directly to a 3 in × 3 in PCB.
The THS7530-Q1 incorporates a PowerPAD on the underside of the chip. The PowerpAD acts as a heatsink and must be connected to
a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the
PowerPAD thermally enhanced package.
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6.7 Typical Characteristics
Measured using the AC test circuit shown in Figure 16 (unless otherwise noted).
Table 1. Table Of Graphs
FIGURE
Voltage Gain to Load
vs Frequency (Input at 45 dBm)
Figure 1
Gain and Gain Error
vs VG+
Figure 2
Noise Figure
vs Frequency
Figure 3
Output Intercept Point
vs Frequency
Figure 4
1-dB Compression Point
vs Frequency
Figure 5
Total Input Voltage Noise
vs Frequency
Figure 6
Intermodulation Distortion
vs Frequency
Figure 7
Harmonic Distortion
vs Frequency
Figure 8
S-Parameters
vs Frequency
Figure 24
Differential Input Impedance of Main Amplifier
vs Frequency
Figure 25
Differential Output Impedance of Main Amplifier
vs Frequency
Figure 9
VG+ Input Impedance
vs Frequency
Figure 10
VOCM Input Impedance
vs Frequency
Figure 11
Common-Mode Rejection Ratio
vs Frequency
Figure 12
Step Response: 2 VPP
vs Time
Figure 13
Step Response: Rising Edge
vs Time
Figure 14
Step Response: Falling Edge
vs Time
Figure 15
50
45
40
Maximum Gain
0.4
Gain
Gain Error
40
0.2
0
30
Gain
20
10
25
-0.2
20
Gain Error (dB)
30
Gain (dB)
Voltage Gain to Load (dB)
35
-0.4
15
Gain Error
Minimum Gain
10
0
-0.6
5
-10
0
1
10
100
1000
0
400
600
800
-0.8
1000
VG+ Voltage (mV)
Frequency (MHz)
Gain is taken at load.
PIN = –45 dBm
200
Add 6 dB to refer to amplifier output
Figure 1. Voltage Gain to Load vs Frequency
Figure 2. Gain and Gain Error vs VG+
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35
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60
Gain = 20 dB
Gain = 30 dB
Gain = 40 dB
30
OIP2
OIP3
55
Output Intercept Point (dBm)
50
Noise Figure (dB)
25
20
15
45
40
35
30
25
20
10
15
5
10
0
50
100
150
200
250
300
0
50
100
Frequency (MHz)
150
200
250
300
Frequency (MHz)
Terminated input
Taken at load.
Figure 3. Noise Figure vs Frequency
Add 3 dB to refer to amplifier output.
Figure 4. Output Intercept Point vs Frequency
100
15
14
13
Total Input Voltage Noise (nV/√Hz)
1-dB Compression Point (dBm)
12
11
10
9
8
7
6
5
4
10
3
2
1
0
1
0
50
100
150
200
250
300
10
100
1k
Taken at load.
100 k
1M
10 M
100 M
Add 3 dB to refer to amplifier output.
Figure 6. Total Input Voltage Noise vs Frequency
Figure 5. 1-dB Compression Point vs Frequency
-50
-45
10 k
Frequency (Hz)
Frequency (MHz)
IMD2
IMD3
HD2
HD3
-52
-50
-54
-56
Hd2 and HD3 (dBc)
IMD2 and IMD3 (dBc)
-55
-60
-65
-58
-60
-62
-64
-70
-66
-75
-68
-70
-80
0
50
100
150
200
0
10
VG+ = 1 V
VO = 1 VPP (composite)
RL = 400 Ω
Figure 7. Intermodulation Distortion vs Frequency
8
20
30
40
50
60
70
Frequency (MHz)
Frequency (MHz)
VG+ = 1 V
VO = 1 VPP
RL = 400 Ω
Figure 8. Harmonic Distortion vs Frequency
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50
100
45
90
40
80
35
70
VG+ Input Impedance (kΩ)
Differential Output Impedance (Ω)
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30
25
20
15
60
50
40
30
10
20
5
10
0
0
1
10
100
1000
0.1
1
Frequency (MHz)
Figure 10. VG+ Input Impedance vs Frequency
25
-10
20
-20
Common-Mode Rejection Ratio (dB)
Input Impedance (kΩ)
Figure 9. Differential Output Impedance of Main Amplifier
vs Frequency
15
10
5
-30
-40
-50
-60
0
0.1
1
10
0.1
100
1
10
Frequency (MHz)
100
1000
Frequency (MHz)
Figure 11. VOCM Input Impedance vs Frequency
Figure 12. Common-Mode Rejection Ratio vs Frequency
1.5
1.5
1.0
1.0
0.5
0.5
Output Voltage (V)
Step Response (2 VPP)
10
Frequency (MHz)
0
0
-0.5
-0.5
-1.0
-1.0
-1.5
-1.5
0
200
400
600
800
1000
0
RL = 400 Ω
At amplifier output and minimum gain
Figure 13. Step Response
2
4
6
8
10
12
Time (ns)
Time (ns)
RL = 400 Ω
At amplifier output and minimum gain
Figure 14. Step Response: Rising Edge
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1.5
Output Voltage (V)
1.0
0.5
0
-0.5
-1.0
-1.5
0
4
2
6
8
10
12
Time (ns)
RL = 400 Ω
At amplifier output and minimum gain
Figure 15. Step Response: Falling Edge
7 Parameter Measurement Information
7.1 Test Circuits
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
VCL+
50-W
Source
Coax
VIN
VCL-
50 W
1:1
6.8 mF
33 pF
24.9 W
1:1
VOUT
Coax
50-W
Load
THS7530
VOCM
PD
24.9 W
VG-
0.1 mF
VS-
VG+
33 pF
Figure 16. AC Test Circuit
VS+ = 5 V
VCL+
VCL-
0.1 mF
6.8 mF
VOUT-
VIN+
VOCM
VIN-
THS7530
800 W
VOUT+
PD
VG-
0.1 mF
VSVG+
Figure 17. DC Test Circuit
10
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8 Detailed Description
8.1 Overview
The THS7530-Q1 device is a fully-differential amplifier with 300-MHz bandwidth and with continually-variable
gain from 11.6 dB to 46.5 dB. This amplifier together with an automatic gain control (AGC) circuit will precisely
established a desired amplitude at its output.
The input architecture is a modified Gilbert cell. The output from the Gilbert cell is converted to a voltage and
buffered to the output as a fully-differential signal. A summing node between the outputs is used to compare the
output common-mode voltage to the VOCM input. The VOCM error amplifier then servos the output common-mode
voltage to maintain it equal to the VOCM input. Left unterminated, VOCM is set to midsupply by internal resistors.
The gain control input is conditioned to give linear-in-dB gain control (block H). The gain control input is a
differential signal from 0 V to 0.9 V which varies the gain from 11.6 dB to 46.5 dB.
VCL+ and VCL– provide inputs that limit the output voltage swing of the amplifier.
8.2 Functional Block Diagram
VCL+
VCL-
VS+
x1
VOUT+
Output
Buffer
VOCM Error
Amplifier
VOUT-
VIN+
VOCM
VIN-
PD
Power
Control
VSVG+
VG-
H
THS7530
8.3 Feature Description
The main features of the THS7530-Q1 device are continually-variable gain control, common-mode voltage
control, output voltage clamps, and power-down mode.
8.3.1 Continually-Variable Gain Control
The amplifier gain in dB is a linear function of the gain control voltage, which has a range of 0 V to 0.9 V. The
slope of the gain control input is 38.8 dB/V with a gain range of 11.6 dB to 46.5 dB, which is 3.8 to 211.3 V/V,
respectively. The bandwidth of the gain control is 15 MHz, typically.
The gain control is a differential input to reduce noise due to ground bounce, coupling, and so forth. The negative
gain-control input VG– can be below the negative supply by as much as 600 mV.
8.3.2 Common-Mode Voltage Control
The common-mode voltage control sets the common-mode voltage of the differential output. The gain of the
control voltage is 1 V/V with a range of 1.75 V to 3.25 V above the negative supply. If unconnected, the commonmode voltage control is at mid-supply, typically 2.5 V above the negative supply. The bandwidth of the commonmode voltage control is an impressive 32 MHz.
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Feature Description (continued)
8.3.3 Output Voltage Clamps
Separate inputs, VCL– and VCL+, establish the minimum and maximum output voltages, respectively. The typical
error of the output voltage compared to the clamp voltage is only 25 mV. This feature can be used to avoid
saturating the inputs of a receiving device, thereby precluding long recovery times in the signal path.
8.3.4 Power-Down Mode
To minimize power consumption when idle, the THS7530-Q1 device has an active-low power-down control that
reduces the quiescent current from 40 mA to 350 µA. The turnon delay is only 820 ns.
When in power-down mode, the THS7530-Q1 device has a 80-dB forward isolation to allow other devices to
drive the same signal path with minimal interference from the idle THS7530-Q1 device.
8.4 Device Functional Modes
The THS7530-Q1 device has two functional modes: full-power mode and power-down mode. The power-down
mode reduces the quiescent current of the device to 350 µA from a typical value of 40 mA.
With a turnon time of only 820 ns and a turnoff time of 500 ns, the power-down mode can be used to greatly
reduce the average power consumption of the device without sacrificing system performance.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The THS7530-Q1 device is designed to work in a wide variety of applications requiring continuously variable gain
and a fully-differential signal path. The common-mode voltage control and the output voltage clamps enable the
THS7530-Q1 device to drive a diverse array of receiving circuits.
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
33 pF
50 W
VCL+
VCL24.9 W
1:1
VIN
6.8 mF
VOCM
PD
1:1
VOUT
THS7530
24.9 W
0.1 mF
VG33 pF
VS-
VG+
Figure 18. EVM Schematic: Designed for Use With Typical 50-Ω RF Test Equipment
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
49.9 W
6.8 mF
33 pF
49.9 W
VCL+
VCL-
0.1 mF
24.9 W
0.1 mF
VIN
VOUTVOCM
PD
THS7530
0.1 mF
VOUT+
24.9 W
VG-
0.1 mF
33 pF
VS-
VG+
Figure 19. AC-Coupled Single-Ended Input With AC-Coupled Differential Output
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Application Information (continued)
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
24.9 W
6.8 mF
33 pF
24.9 W
VCL+
VCL-
0.1 mF
0.1 mF
24.9 W
VIN+
VOUTVOCM
0.1 mF
THS7530
PD
0.1 mF
VOUT+
VIN24.9 W
VG-
0.1 mF
33 pF
VS-
VG+
Figure 20. AC-Coupled Differential Input With AC-Coupled Differential Output
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
49.9 W
6.8 mF
33 pF
49.9 W
VCL+
VCL-
0.1 mF
24.9 W
VIN
VOUTVOCM
THS7530
PD
VOUT+
24.9 W
VG-
0.1 mF
33 pF
VS-
VG+
Figure 21. DC-Coupled Single-Ended Input With DC-Coupled Differential Output
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
24.9 W
6.8 mF
33 pF
24.9 W
VCL+
VCL24.9 W
VIN+
VOUTVOCM
PD
THS7530
VOUT+
VIN24.9 W
VG-
0.1 mF
33 pF
VS-
VG+
Figure 22. DC-Coupled Differential Input With DC-Coupled Differential Output
14
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9.2 Typical Application
VS+ = 5 V
1 kW
1 kW
0.1 mF
0.1 mF
24.9 W
6.8 mF
33 pF
24.9 W
VCL+
VCL-
0.1 mF
24.9 W
0.1 mF
VIN+
VOUT0.1 mF
VOCM
PD
THS7530
0.1 mF
VOUT+
VIN24.9 W
VG-
0.1 mF
33 pF
VS-
VG+
AGC Detect
VREF
Figure 23. Typical Application Circuit
9.2.1 Design Requirements
A typical application circuit is shown in Figure 23. Two noteworthy aspects of this circuit are the customer’s
automatic gain control (AGC) circuit and the THS7530-Q1 input bias circuit.
The proper design of the AGC circuit is essential for the THS7530-Q1 device to operate properly in the
customer’s application. The method of detecting the amplitude of the differential output of the THS7530-Q1
device and creating the gain-control voltage, VG+, from the detected amplitude and the reference amplitude, Vref,
are application-specific and beyond the scope of this document. The bandwidth of the amplitude of the THS7530Q1 amplitude control is 15 MHz, which allows for rapid corrections of amplitude errors but which also allows
noise from DC to 15 MHz to create an amplitude error. The trade-off between rapid amplitude correction and
amplitude modulation due to noise is an important design consideration.
The input bias currents of the differential inputs of the THS7530-Q1 device are typically 20 µA. When the
differential inputs are AC-coupled, the bias currents must be supplied as shown in Figure 23. In this circuit, the
DC bias voltage is mid-supply and the AC differential input impedance is 50 Ω. The 0.1-µF capacitor between the
two 24.9-Ω resistors creates an AC ground for the driving circuit.
9.2.2 Detailed Design Procedure
The THS7530-Q1 device is designed for nominal 5-V power supply from VS+ to VS–.
The amplifier has fully differential inputs, VIN+ and VIN–, and fully differential outputs, VOUT+ and VOUT– The inputs
are high impedance and outputs are low impedance. External resistors are recommended for impedance
matching and termination purposes.
The inputs and outputs can be DC-coupled, but for best performance, the input and output common-mode
voltage should be maintained at the midpoint between the two supply pins. The output common-mode voltage is
controlled by the voltage applied to VOCM. Left unterminated, VOCM is set to midsupply by internal resistors. A 0.1µF bypass capacitor should be placed between VOCM and ground to reduce common-mode noise. The input
common-mode voltage defaults to midrail when left unconnected. For voltages other than midrail, VOCMmust be
biased by external means. VIN+ and VIN– both require a nominal 30-µA bias current for proper operation.
Therefore, ensure equal input impedance at each input to avoid generating an offset voltage that varies with
gain.
Voltage applied from VG– to VG+ controls the gain of the part with 38.8-dB/V gain slope. The input can be
differential or single ended. VG– must be maintained within –0.6 V and 0.8 V of VS–for proper operation. The
negative gain input should typically be tied directly to the negative power supply.
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Typical Application (continued)
VCL+ and VCL– are inputs that limit the output voltage swing of the amplifier. The voltages applied set an absolute
limit on the voltages at the output. Input voltages at VCL+ and VCL– clamp the output, ensuring that neither output
exceeds those values.
The power-down input is a TTL compatible input, referenced to the negative supply voltage. A logic low puts the
THS7530-Q1 device in power-saving mode. In power-down mode the part consumes less than 1-mA current, the
output goes high impedance, and a high amount of isolation is maintained between the input and output.
Power-supply bypass capacitors are required for proper operation. A 6.8-µF tantalum bulk capacitor is
recommended if the amplifier is located far from the power supply and may be shared among other devices. A
ceramic 0.1-µF capacitor is recommended within 0.1-in of the device power pin. The ceramic capacitors should
be located on the same layer as the amplifier to eliminate the use of vias between the capacitors and the power
pin.
Table 2. THS7530EVM Bill of Materials
ITEM
NO.
DESCRIPTION
SIZE
REFERENCE DESIGNATOR
QTY
PART NUMBER
1
Bead, ferrite, 3 A, 80 Ω
1206
FB1
1
(Steward) HI1206N800R–00
2
Capacitor, tantalum, 6.8 mF, 35 V, 10%
D
C2
1
(AVX) TAJD685K035R
3
Capacitor, ceramic, 0.1 mF, X7R, 16V
508
C1
1
(AVX) 0508YC104KAT2A
5
Capacitor, ceramic, 0.1 mF, X7R, 50 V
805
C3, C7, C12, C13, C14, C15,
C16, C17
8
(AVX) 08055C104KAT2A
6
Diode, Schottky, 20 V, 0.5 A
SOD-123
D1
1
(Diodes Inc.) B0520LW–7
7
Resistor, 10 Ω, 1/8 W, 1%
805
R24, R25, R26
3
(PHYCOMP)
9C08052A10R0FKHFT
8
Resistor, 24.9 Ω, 1/8 W, 1%
805
R9, R15
2
(PHYCOMP)
9C08052A24R9FKHFT
9
Resistor, 1 kΩ, 1.8W, 1%
805
R7, R12
2
(PHYCOMP)
9C08052A1001FKHFT
10
Resistor, 3.92 kΩ , 1/8 W, 1%
805
R1
1
(PHYCOMP)
9C08052A3921FKHFT
11
Resistor, 0 Ω, 1/4 W
1206
C4, C5
2
(PHYCOMP)
9C12063A0R00JLHFT
12
Resistor, 49.9 Ω, 1/4 W, 1%
1206
R4
1
(PHYCOMP)
9C12063A49R9FKRFT
13
Pot., ceramic, 1/4 inch square, 1 kΩ
R2
1
(Bourns) 3362P–1–102
14
Pot., ceramic, 1/4 inch square, 10 kΩ
R21, R22, R23
3
(Bourns) 3362P–1–103
15
IC, TLV2371
SOT-23
U2, U3, U4
3
(TI) TLV2371IDBVT
16
Transformer, 1:1
CD542
T1, T2
2
(Mini-Circuits) ADT1-1WT
17
Connector, edge, SMA PCB Jack
J3, J4
2
(Johnson) 142–0701–801
18
Jack, banana receptacle, 0.25-in diameter
hole
J1, J2
2
(HH Smith) 101
19
Header, 0.1-in Ctrs, 0.025-in square pins
JP1
1
(Sullins) PZC36SAAN
20
Shunts
JP1
1
(Sullins) SSC02SYAN
21
Test point, black
TP2, TP3, TP4
3
(Keystone) 5001
22
Test points, red
TP1, TP8, TP9, TP10
4
(Keystone) 5000
23
Standoff, 4–40 Hex, 0.625-in Length
4
(Keystone) 1804
24
Screw, Phillips, 4–40, .250-in
4
SHR–0440–016–SN
25
IC, THS7530-Q1
1
(TI) THS7530QPWPRQ1
26
Board, printed circuit
1
(TI) EDGE # 6441987
16
2 POS.
U1
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9.2.3 Application Curves
Figure 24 and Figure 25 highlight the input characteristics of the THS7530-Q1 device that should be used to
design the circuit driving the THS7530-Q1 device.
0
10
9
-10
-20
-30
S11
S12
S22
-40
-50
Differential Input Impedance (kΩ)
Differential Input Impedance (kΩ)
8
7
6
5
4
3
2
-60
1
-70
0
0.1
1
10
100
300
0.1
1
10
100
1000
Frequency (MHz)
Frequency (MHz)
Figure 24. S-Parameters vs Frequency
Figure 25. Differential Input Impedance of Main Amplifier
vs Frequency
10 Power Supply Recommendations
The THS7530-Q1 device is principally intended to operate with a nominal single-supply voltage of 5 V. Supply
voltage tolerances of ±10% are supported. The absolute maximum supply is 5.5 V.
Supply decoupling is required, as described in Application and Implementation.
Split (or bipolar) supplies can be used with the THS7530-Q1 device, as long as the total value across the device
remains less than 5.5 V (absolute maximum).
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11 Layout
11.1 Layout Guidelines
The THS7530-Q1 device is available in a thermally-enhanced PowerPAD™ package. Figure 26 shows the
recommended number of vias and thermal land size recommended for best performance. Thermal vias connect
the thermal land to internal or external copper planes and should have a drill diameter sufficiently small so that
the via hole is effectively plugged when the barrel of the via is plated with copper. This plug is needed to prevent
wicking the solder away from the interface between the package body and the thermal land on the surface of the
board during solder reflow. The experiments conducted jointly with Solectron Texas indicate that a via drill
diameter of 0.33 mm (13 mils, or .013 in) or smaller works well when 1-ounce copper is plated at the surface of
the board and simultaneously plating the barrel of the via. If the thermal vias are not plugged when the copper
plating is performed, then a solder mask material should be used to cap the vias with a dimension equal to the
via diameter + 0.1 mm minimum. This prevents the solder from being wicked through the thermal via and
potentially creating a solder void in the region between the package bottom and the thermal land on the surface
of the PCB.
TSSOP
14-Pin PWP Package
2´3
3.4
5
Figure 26. Recommended Thermal Land Size and Thermal Via Patterns (Dimensions in mm)
See TI's Technical Brief titled, PowerPAD™ Thermally Enhanced Package (SLMA002) for a detailed discussion
of the PowerPAD™ package, its dimensions, and recommended use.
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Layout Guidelines (continued)
Figure 27. EVM Schematic
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11.2 Layout Examples
Figure 28. Layout Diagram (Top)
20
Figure 29. Layout Diagram (Ground)
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Layout Examples (continued)
Figure 30. Layout Diagram (Power)
Figure 31. Layout Diagram (Bottom)
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.1.2 Development Support
For the THS7530 PSpice Model, see SLOJ139.
For the THS7530 TINA-TI Spice Model, see SLAM020.
For the THS7530 TINA-TI Reference Design, see SLAC091.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following:
• THS7530 EVM Users Guide, SLOU161
• Noise Analysis for High-Speed Op Amps, SBOA066
• TI's Analog Signal Chain Guide, SLYB174
• PowerPAD™ Thermally Enhanced Package, SLMA002
• PowerPAD™ Made Easy, SLMA004
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Dec-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
THS7530QPWPRQ1
ACTIVE
Package Type Package Pins Package
Drawing
Qty
HTSSOP
PWP
14
3000
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
Op Temp (°C)
Device Marking
(4/5)
-40 to 125
T7530Q1
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
17-Dec-2015
OTHER QUALIFIED VERSIONS OF THS7530-Q1 :
• Catalog: THS7530
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
THS7530QPWPRQ1
Package Package Pins
Type Drawing
SPQ
HTSSOP
3000
PWP
14
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
330.0
12.4
Pack Materials-Page 1
6.9
B0
(mm)
K0
(mm)
P1
(mm)
5.6
1.6
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
THS7530QPWPRQ1
HTSSOP
PWP
14
3000
350.0
350.0
43.0
Pack Materials-Page 2
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AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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