Texas Instruments | LM6172QML Dual High Speed, Low Pwr, Low Dist, VFeedback Amps (Rev. A) | Datasheet | Texas Instruments LM6172QML Dual High Speed, Low Pwr, Low Dist, VFeedback Amps (Rev. A) Datasheet

Texas Instruments LM6172QML Dual High Speed, Low Pwr, Low Dist, VFeedback Amps (Rev. A) Datasheet
LM6172QML
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LM6172QML Dual High Speed, Low Power, Low Distortion, Voltage Feedback Amplifiers
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FEATURES
DESCRIPTION
• Available with Radiation Specification
– High Dose Rate 300 krad(Si)
– ELDRS Free 100 krad(Si)
• Easy to Use Voltage Feedback Topology
• High Slew Rate 3000V/μs
• Wide Unity-Gain Bandwidth 100MHz
• Low Supply Current 2.3mA / Amplifier
• High Output Current 50mA / Amplifier
• Specified for ±15V and ±5V Operation
The LM6172 is a dual high speed voltage feedback
amplifier. It is unity-gain stable and provides excellent
DC and AC performance. With 100MHz unity-gain
bandwidth, 3000V/μs slew rate and 50mA of output
current per channel, the LM6172 offers high
performance in dual amplifiers; yet it only consumes
2.3mA of supply current each channel.
APPLICATIONS
The LM6172 is built with TI's advanced VIP™ III
(Vertically Integrated PNP) complementary bipolar
process.
1
234
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•
•
•
•
•
•
Scanner I- to -V Converters
ADSL/HDSL Drivers
Multimedia Broadcast Systems
Video Amplifiers
NTSC, PAL® and SECAM Systems
ADC/DAC Buffers
Pulse Amplifiers and Peak Detectors
The LM6172 operates on ±15V power supply for
systems requiring large voltage swings, such as
ADSL, scanners and ultrasound equipment. It is also
specified at ±5V power supply for low voltage
applications such as portable video systems.
Connection Diagram
Figure 1. 8-Pin CDIP
Top View
N/C
1
16
N/C
OUT A
2
15
N/C
IN- A
3
14
V+
IN+ A
4
13
N/C
N/C
5
12
OUT B
V-
6
11
IN- B
N/C
7
10
IN+ B
N/C
8
9
N/C
Figure 2. 16LD CLGA
Top View
1
2
3
4
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
VIP is a trademark of Texas Instruments.
PAL is a registered trademark of and used under lisence from Advanced Micro Devices, Inc..
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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LM6172 Driving Capacitive Load
LM6172 Simplified Schematic (Each Amplifier)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage (V+ − V−)
Differential Input Voltage
36V
(2)
±10V
Maximum Junction Temperature
Power Dissipation
150°C
(3) (4)
,
Output Short Circuit to Ground
1.03W
(5)
Continuous
Storage Temperature Range
−65°C ≤ TA ≤ +150°C
Common Mode Voltage Range
V+ +0.3V to V− −0.3V
Input Current
±10mA
Thermal Resistance
(6)
θJA
θJC
Package Weight
ESD Tolerance
(1)
(2)
(3)
(4)
(5)
(6)
(7)
8LD CDIP (Still Air)
100°C/W
8LD CDIP (500LF/Min Air Flow)
46°C/W
16LD CLGA (Still Air) “WG”
124°C/W
16LD CLGA (500LF/Min Air Flow) “WG”
74°C/W
16LD CLGA (Still Air) “GW”
135°C/W
16LD CLGA (500LF/Min Air Flow) “GW”
85°C/W
8LD CDIP
(4)
2°C/W
16LD CLGA “WG” (4)
6°C/W
16LD CLGA “GW”
7°C/W
8LD CDIP
980mg
16LD CLGA “WG”
365mg
16LD CLGA “GW”
410mg
(7)
4KV
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
Differential Input Voltage is measured at VS = ±15V.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
The package material for these devices allows much improved heat transfer over our standard ceramic packages. In order to take full
advantage of this improved heat transfer, heat sinking must be provided between the package base (directly beneath the die), and either
metal traces on, or thermal vias through, the printed circuit board. Without this additional heat sinking, device power dissipation must be
calculated using θJA, rather than θJC, thermal resistance. It must not be assumed that the device leads will provide substantial heat
transfer out the package, since the thermal resistance of the leadframe material is very poor, relative to the material of the package
base. The stated θJC thermal resistance is for the package material only, and does not account for the additional thermal resistance
between the package base and the printed circuit board. The user must determine the value of the additional thermal resistance and
must combine this with the stated value for the package, to calculate the total allowed power dissipation for the device.
Continuous short circuit operation can result in exceeding the maximum allowed junction temperature of 150°C
All numbers apply for packages soldered directly into a PC board.
Human body model, 1.5 kΩ in series with 100 pF.
RECOMMENDED OPERATING CONDITIONS
(1)
5.5V ≤ VS ≤ 36V
Supply Voltage
−55°C ≤ TA ≤ +125°C
Operating Temperature Range
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
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QUALITY CONFORMANCE INSPECTION
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
12
Settling time at
+25
13
Settling time at
+125
14
Settling time at
-55
LM6172 (±5V) ELECTRICAL CHARACTERISTICS
DC PARAMETERS
The following conditions apply, unless otherwise specified.
Symbol
Parameter
VIO
Input Offset Voltage
IIB
Input Bias Current
IIO
Input Offset Current
CMRR
Common Mode Rejection Ratio
PSRR
Power Supply Rejection Ratio
(1)
TJ = 25°C, V+ = +5V, V− = −5V, VCM = 0V & RL > 1MΩ
Conditions
VS = ±15V to ±5V
Large Signal Voltage Gain
RL = 100Ω
RL = 1KΩ
VO
Output Swing
RL = 100Ω
(1)
(2)
4
Notes
VCM = ±2.5V
RL = 1KΩ
AV
Temp (°C)
Min
Subgroups
Max
Units
1.0
mV
1
3.0
mV
2, 3
2.5
µA
1
3.5
µA
2, 3
1.5
µA
1
2.2
µA
2, 3
70
dB
1
65
dB
2, 3
75
dB
1
70
dB
2, 3
See
(2)
70
dB
1
See
(2)
65
dB
2, 3
See
(2)
65
dB
1
See
(2)
dB
2, 3
60
3.1
-3.1
V
1
3.0
-3.0
V
2, 3
2.5
-2.4
V
1
2.4
-2.3
V
2, 3
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT =
±5V. For VS = ±5V, VOUT = ±1V.
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LM6172 (±5V) ELECTRICAL CHARACTERISTICS (1)
DC PARAMETERS (continued)
The following conditions apply, unless otherwise specified.
Symbol
Parameter
TJ = 25°C, V+ = +5V, V− = −5V, VCM = 0V & RL > 1MΩ
Conditions
Sourcing RL = 100Ω
IL
Output Current (Open Loop)
Sinking RL = 100Ω
IS
Supply Current
(3)
Notes
Min
Max
Units
Subgroups
See
(3)
25
mA
1
See
(3)
24
mA
2, 3
See
(3)
-24
mA
1
See
(3)
-23
mA
2, 3
6.0
mA
1
7.0
mA
2, 3
Both Amplifiers
The open loop output current is specified by measurement of the open loop output voltage swing using 100Ω output load.
DC DRIFT PARAMETERS (1)
The following conditions apply, unless otherwise specified. TJ = 25°C, V+ = +5V, V− = −5V, VCM = 0V & RL > 1MΩ
Delta calculations performed on QMLV devices at group B , subgroup 5.
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Subgroups
VIO
Input Offset Voltage
-0.25
0.25
mV
1
IIB
Input Bias Current
-0.50
0.50
µA
1
IIO
Input Ofset Current
-0.25
0.25
µA
1
(1)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
LM6172 (±15V) ELECTRICAL CHARACTERISTICS
DC PARAMETERS (1)
The following conditions apply, unless otherwise specified.
Symbol
VIO
Parameter
TJ = 25°C, V+ = +15V, V− = −15V, VCM = 0V, & RL = 1MΩ
Conditions
Input Bias Current
IIO
Input Offset Current
CMRR
Common Mode Rejection Ratio
PSRR
Power Supply Rejection Ratio
VCM = ±10V
VS = ±15V to ±5V
RL = 1KΩ
Large Signal Voltage Gain
RL = 100Ω
(1)
(2)
Max
Units
Subgroups
1.5
mV
1
3.5
mV
2, 3
3.0
µA
1
4.0
µA
2, 3
2.0
µA
1
3.0
µA
2, 3
70
dB
1
65
dB
2, 3
75
dB
1
70
dB
2, 3
Min
Input Offset Voltage
IIB
AV
Notes
See
(2)
75
dB
1
See
(2)
70
dB
2, 3
See
(2)
65
dB
1
See
(2)
60
dB
2, 3
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT =
±5V. For VS = ±5V, VOUT = ±1V.
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LM6172 (±15V) ELECTRICAL CHARACTERISTICS
DC PARAMETERS (1) (continued)
The following conditions apply, unless otherwise specified.
Symbol
Parameter
TJ = 25°C, V+ = +15V, V− = −15V, VCM = 0V, & RL = 1MΩ
Conditions
Notes
RL = 1KΩ
VO
Output Swing
RL = 100Ω
Sourcing RL = 100Ω
IL
Output Current (Open Loop)
Sinking RL = 100Ω
IS
Supply Current
(3)
Subgroups
Min
Max
Units
12.5
-12.5
V
1
12
-12
V
2, 3
6.0
-6.0
V
1
5.0
-5.0
V
2, 3
See
(3)
60
mA
1
See
(3)
50
mA
2, 3
See
(3)
-60
mA
1
See
(3)
-50
mA
2, 3
8.0
mA
1
9.0
mA
2, 3
Both Amplifiers
The open loop output current is specified by measurement of the open loop output voltage swing using 100Ω output load.
AC PARAMETERS
(1)
The following conditions apply, unless otherwise specified.
Symbol
SR
Conditions
AV = 2, VI = ±2.5V
3nS Rise & Fall time
Slew Rate
GBW
(1)
Parameter
TJ = 25°C, V+ = +15V, V− = −15V, VCM = 0V
Unity-Gain Bandwidth
Notes
See
Units
Subgroups
1700
V/µS
4
80
MHz
4
Min
Max
(2) (3)
See
,
(4)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
See AN0009 for SR test circuit.
Slew Rate measured between ±4V.
See AN0009 for GBW test circuit.
(2)
(3)
(4)
DC DRIFT PARAMETERS
(1)
The following conditions apply, unless otherwise specified. TJ = 25°C, V+ = +15V, V− = −15V, VCM = 0V
Delta calculations performed on QMLV devices at group B , subgroup 5.
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Subgroups
VIO
Input Offset Voltage
-0.25
0.25
mV
1
IIB
Input Bias Current
-0.50
0.50
µA
1
IIO
Input Offset Current
-0.25
0.25
µA
1
(1)
6
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
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TYPICAL PERFORMANCE CHARACTERISTICS
Unless otherwise noted, TA = 25°C
Supply Voltage
vs.
Supply Current
Supply Current
vs.
Temperature
Figure 3.
Figure 4.
Input Offset Voltage
vs.
Temperature
Input Bias Current
vs.
Temperature
Figure 5.
Figure 6.
Short Circuit Current
vs.
Temperature (Sourcing)
Short Circuit Current
vs.
Temperature (Sinking)
Figure 7.
Figure 8.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, TA = 25°C
8
Output Voltage
vs.
Output Current
(VS = ±15V)
Output Voltage
vs.
Output Current
(VS = ±5V)
Figure 9.
Figure 10.
CMRR
vs.
Frequency
PSRR
vs.
Frequency
Figure 11.
Figure 12.
PSRR
vs.
Frequency
Open-Loop Frequency Response
Figure 13.
Figure 14.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, TA = 25°C
Open-Loop Frequency Response
Gain-Bandwidth Product
vs.
Supply Voltage at Different Temperature
Figure 15.
Figure 16.
Large Signal Voltage Gain
vs.
Load
Large Signal Voltage Gain
vs.
Load
Figure 17.
Figure 18.
Input Voltage Noise
vs.
Frequency
Input Voltage Noise
vs.
Frequency
Figure 19.
Figure 20.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, TA = 25°C
10
Input Current Noise
vs.
Frequency
Input Current Noise
vs.
Frequency
Figure 21.
Figure 22.
Slew Rate
vs.
Supply Voltage
Slew Rate
vs.
Input Voltage
Figure 23.
Figure 24.
Large Signal Pulse Response
AV = +1, VS = ±15V
Small Signal Pulse Response
AV = +1, VS = ±15V
Figure 25.
Figure 26.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, TA = 25°C
Large Signal Pulse Response
AV = +1, VS = ±5V
Small Signal Pulse Response
AV = +1, VS = ±5V
Figure 27.
Figure 28.
Large Signal Pulse Response
AV = +2, VS = ±15V
Small Signal Pulse Response
AV = +2, VS = ±15V
Figure 29.
Figure 30.
Large Signal Pulse Response
AV = +2, VS = ±5V
Small Signal Pulse Response
AV = +2, VS = ±5V
Figure 31.
Figure 32.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, TA = 25°C
12
Large Signal Pulse Response
AV = −1, VS = ±15V
Small Signal Pulse Response
AV = −1, VS = ±15V
Figure 33.
Figure 34.
Large Signal Pulse Response
AV = −1, VS = ±5V
Small Signal Pulse Response
AV = −1, VS = ±5V
Figure 35.
Figure 36.
Closed Loop Frequency Response
vs.
Supply Voltage
(AV = +1)
Closed Loop Frequency Response
vs.
Supply Voltage
(AV = +2)
Figure 37.
Figure 38.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, TA = 25°C
Harmonic Distortion
vs.
Frequency
(VS = ±15V)
Harmonic Distortion
vs.
Frequency
(VS = ±5V)
Figure 39.
Figure 40.
Crosstalk Rejection
vs.
Frequency
Maximum Power Dissipation
vs.
Ambient Temperature
Figure 41.
Figure 42.
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APPLICATION NOTES
LM6172 PERFORMANCE DISCUSSION
The LM6172 is a dual high-speed, low power, voltage feedback amplifier. It is unity-gain stable and offers
outstanding performance with only 2.3mA of supply current per channel. The combination of 100MHz unity-gain
bandwidth, 3000V/μs slew rate, 50mA per channel output current and other attractive features makes it easy to
implement the LM6172 in various applications. Quiescent power of the LM6172 is 138mW operating at ±15V
supply and 46mW at ±5V supply.
LM6172 CIRCUIT OPERATION
The class AB input stage in LM6172 is fully symmetrical and has a similar slewing characteristic to the current
feedback amplifiers. In the LM6172 Simplified Schematic (Page 2), Q1 through Q4 form the equivalent of the
current feedback input buffer, RE the equivalent of the feedback resistor, and stage A buffers the inverting input.
The triple-buffered output stage isolates the gain stage from the load to provide low output impedance.
LM6172 SLEW RATE CHARACTERISTIC
The slew rate of LM6172 is determined by the current available to charge and discharge an internal high
impedance node capacitor. This current is the differential input voltage divided by the total degeneration resistor
RE. Therefore, the slew rate is proportional to the input voltage level, and the higher slew rates are achievable in
the lower gain configurations.
When a very fast large signal pulse is applied to the input of an amplifier, some overshoot or undershoot occurs.
By placing an external series resistor such as 1kΩ to the input of LM6172, the slew rate is reduced to help lower
the overshoot, which reduces settling time.
REDUCING SETTLING TIME
The LM6172 has a very fast slew rate that causes overshoot and undershoot. To reduce settling time on
LM6172, a 1kΩ resistor can be placed in series with the input signal to decrease slew rate. A feedback capacitor
can also be used to reduce overshoot and undershoot. This feedback capacitor serves as a zero to increase the
stability of the amplifier circuit. A 2pF feedback capacitor is recommended for initial evaluation. When the
LM6172 is configured as a buffer, a feedback resistor of 1kΩ must be added in parallel to the feedback capacitor.
Another possible source of overshoot and undershoot comes from capacitive load at the output. Please see the
section “ Driving Capacitive Loads” for more detail.
DRIVING CAPACITIVE LOADS
Amplifiers driving capacitive loads can oscillate or have ringing at the output. To eliminate oscillation or reduce
ringing, an isolation resistor can be placed as shown in Figure 43. The combination of the isolation resistor and
the load capacitor forms a pole to increase stability by adding more phase margin to the overall system. The
desired performance depends upon the value of the isolation resistor; the bigger the isolation resistor, the more
damped (slow) the pulse response becomes. For LM6172, a 50Ω isolation resistor is recommended for initial
evaluation.
Figure 43. Isolation Resistor Used
to Drive Capacitive Load
14
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Figure 44. The LM6172 Driving a 510pF Load
with a 30Ω Isolation Resistor
Figure 45. The LM6172 Driving a 220 pF Load
with a 50Ω Isolation Resistor
LAYOUT CONSIDERATION
Printed Circuit Boards And High Speed Op Amps
There are many things to consider when designing PC boards for high speed op amps. Without proper caution, it
is very easy to have excessive ringing, oscillation and other degraded AC performance in high speed circuits. As
a rule, the signal traces should be short and wide to provide low inductance and low impedance paths. Any
unused board space needs to be grounded to reduce stray signal pickup. Critical components should also be
grounded at a common point to eliminate voltage drop. Sockets add capacitance to the board and can affect
frequency performance. It is better to solder the amplifier directly into the PC board without using any socket.
Using Probes
Active (FET) probes are ideal for taking high frequency measurements because they have wide bandwidth, high
input impedance and low input capacitance. However, the probe ground leads provide a long ground loop that
will produce errors in measurement. Instead, the probes can be grounded directly by removing the ground leads
and probe jackets and using scope probe jacks.
Components Selection And Feedback Resistor
It is important in high speed applications to keep all component leads short because wires are inductive at high
frequency. For discrete components, choose carbon composition-type resistors and mica-type capacitors.
Surface mount components are preferred over discrete components for minimum inductive effect.
Large values of feedback resistors can couple with parasitic capacitance and cause undesirable effects such as
ringing or oscillation in high speed amplifiers. For LM6172, a feedback resistor less than 1kΩ gives optimal
performance.
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COMPENSATION FOR INPUT CAPACITANCE
The combination of an amplifier's input capacitance with the gain setting resistors adds a pole that can cause
peaking or oscillation. To solve this problem, a feedback capacitor with a value
CF > (RG × CIN)/RF
can be used to cancel that pole. For LM6172, a feedback capacitor of 2pF is recommended. Figure 46 illustrates
the compensation circuit.
Figure 46. Compensating for Input Capacitance
POWER SUPPLY BYPASSING
Bypassing the power supply is necessary to maintain low power supply impedance across frequency. Both
positive and negative power supplies should be bypassed individually by placing 0.01μF ceramic capacitors
directly to power supply pins and 2.2μF tantalum capacitors close to the power supply pins.
Figure 47. Power Supply Bypassing
TERMINATION
In high frequency applications, reflections occur if signals are not properly terminated. Figure 48 shows a
properly terminated signal while Figure 49 shows an improperly terminated signal.
16
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LM6172QML
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SNOSAR4A – DECEMBER 2010 – REVISED OCTOBER 2011
Figure 48. Properly Terminated Signal
Figure 49. Improperly Terminated Signal
To minimize reflection, coaxial cable with matching characteristic impedance to the signal source should be
used. The other end of the cable should be terminated with the same value terminator or resistor. For the
commonly used cables, RG59 has 75Ω characteristic impedance, and RG58 has 50Ω characteristic impedance.
POWER DISSIPATION
The maximum power allowed to dissipate in a device is defined as:
PD = (TJ(max) − TA)/θJA
Where
•
•
•
•
PD is the power dissipation in a device
TJ(max) is the maximum junction temperature
TA is the ambient temperature
θJA is the thermal resistance of a particular package
For example, for the LM6172 in a SOIC-16 package, the maximum power dissipation at 25°C ambient
temperature is 1000mW.
Thermal resistance, θJA, depends on parameters such as die size, package size and package material. The
smaller the die size and package, the higher θJA becomes. The 8-pin CDIP package has a lower thermal
resistance (95°C/W) than that of 8-pin SOIC (160°C/W). Therefore, for higher dissipation capability, use an 8-pin
CDIP package.
The total power dissipated in a device can be calculated as:
PD = PQ + PL
• PQ is the quiescent power dissipated in a device with no load connected at the output.
• PL is the power dissipated in the device with a load connected at the output; it is not the power dissipated by
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17
LM6172QML
SNOSAR4A – DECEMBER 2010 – REVISED OCTOBER 2011
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the load.
Furthermore,
•
•
PQ: = supply current x total supply voltage with no load
PL: = output current x (voltage difference between supply voltage and output voltage of the same supply)
For example, the total power dissipated by the LM6172 with VS = ±15V and both channels swinging output
voltage of 10V into 1kΩ is
PD:
= PQ + PL
:
= 2[(2.3mA)(30V)] + 2[(10mA)(15V − 10V)]
:
= 138mW + 100mW
:
= 238mW
Application Circuits
Figure 50. I- to -V Converters
Figure 51. Differential Line Driver
18
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Product Folder Links: LM6172QML
LM6172QML
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SNOSAR4A – DECEMBER 2010 – REVISED OCTOBER 2011
REVISION HISTORY
Released
Revision
12/08/2010
A
New Release, Corporate format
Section
1 MDS data sheet converted into one Corp. data
sheet format. MNLM6172AM-X-RH Rev 0A0 will be
archived.
Changes
10/05/2011
B
Features, Ordering Information, Abs Max
Ratings, Footnotes
Update Radiation, Add new ELDRS FREE die id,
'GW' NSID'S w/coresponding SMD numbers. Add
'GW' Theta JA & Theta JC along with weight.Add
Note 15, Modify Note 14. LM6172QML Rev A will be
archived.
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19
PACKAGE OPTION ADDENDUM
www.ti.com
17-Mar-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
5962-9560401QPA
ACTIVE
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
LM6172AMJQML
5962-95604
01QPA Q ACO
01QPA Q >T
5962-9560402QXA
ACTIVE
CFP
NAC
16
42
TBD
Call TI
Call TI
-55 to 125
LM6172AMGW
-QML Q
5962-95604
02QXA ACO
02QXA >T
5962F9560401V9A
ACTIVE
DIESALE
Y
0
39
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
5962F9560401VPA
ACTIVE
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
LM6172AMJFQV
5962F95604
01VPA Q ACO
01VPA Q >T
5962F9560402VXA
ACTIVE
CFP
NAC
16
42
TBD
Call TI
Call TI
-55 to 125
LM6172AMGWF
QMLV Q
5962F95604
02VXA ACO
02VXA >T
5962R9560403V9A
ACTIVE
DIESALE
Y
0
39
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
5962R9560403VXA
ACTIVE
CFP
NAC
16
42
TBD
Call TI
Call TI
-55 to 125
LM6172 MDR
ACTIVE
DIESALE
Y
0
39
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
LM6172-MDE
ACTIVE
DIESALE
Y
0
39
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
LM6172AMGW-QML
ACTIVE
CFP
NAC
16
42
TBD
Call TI
Call TI
-55 to 125
Addendum-Page 1
LM6172AMGW
RLQMLV Q
5962R95604
03VXA ACO
03VXA >T
LM6172AMGW
-QML Q
5962-95604
02QXA ACO
02QXA >T
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
17-Mar-2017
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM6172AMGWFQMLV
ACTIVE
CFP
NAC
16
42
TBD
Call TI
Call TI
-55 to 125
LM6172AMGWF
QMLV Q
5962F95604
02VXA ACO
02VXA >T
LM6172AMGWRLQV
ACTIVE
CFP
NAC
16
42
TBD
Call TI
Call TI
-55 to 125
LM6172AMGW
RLQMLV Q
5962R95604
03VXA ACO
03VXA >T
LM6172AMJ-QML
ACTIVE
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
LM6172AMJQML
5962-95604
01QPA Q ACO
01QPA Q >T
LM6172AMJFQMLV
ACTIVE
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
LM6172AMJFQV
5962F95604
01VPA Q ACO
01VPA Q >T
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
17-Mar-2017
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM6172QML, LM6172QML-SP :
• Military: LM6172QML
• Space: LM6172QML-SP
NOTE: Qualified Version Definitions:
• Military - QML certified for Military and Defense Applications
• Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
Addendum-Page 3
MECHANICAL DATA
NAB0008A
J08A (Rev M)
www.ti.com
MECHANICAL DATA
NAC0016A
WG16A (RevG)
www.ti.com
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