Texas Instruments | LM386 Low Voltage Audio Power Amplifier (Rev. C) | Datasheet | Texas Instruments LM386 Low Voltage Audio Power Amplifier (Rev. C) Datasheet

Texas Instruments LM386 Low Voltage Audio Power Amplifier (Rev. C) Datasheet
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LM386
SNAS545C – MAY 2004 – REVISED MAY 2017
LM386 Low Voltage Audio Power Amplifier
1 Features
3 Description
•
•
•
The LM386M-1 and LM386MX-1 are power amplifiers
designed for use in low voltage consumer
applications. The gain is internally set to 20 to keep
external part count low, but the addition of an external
resistor and capacitor between pins 1 and 8 will
increase the gain to any value from 20 to 200.
1
•
•
•
•
•
•
Battery Operation
Minimum External Parts
Wide Supply Voltage Range: 4 V–12 V or
5 V–18 V
Low Quiescent Current Drain: 4 mA
Voltage Gains from 20 to 200
Ground-Referenced Input
Self-Centering Output Quiescent Voltage
Low Distortion: 0.2% (AV = 20, VS = 6 V, RL = 8 Ω,
PO = 125 mW, f = 1 kHz)
Available in 8-Pin MSOP Package
The inputs are ground referenced while the output
automatically biases to one-half the supply voltage.
The quiescent power drain is only 24 mW when
operating from a 6-V supply, making the LM386M-1
and LM386MX-1 ideal for battery operation.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
2 Applications
LM386N-1
PDIP (8)
9.60 mm × 6.35 mm
•
•
•
•
•
•
•
•
LM386N-3
PDIP (8)
9.60 mm × 6.35 mm
LM386N-4
PDIP (8)
9.60 mm × 6.35 mm
LM386M-1
SOIC (8)
4.90 mm × 3.90 mm
LM386MX-1
SOIC (8)
4.90 mm × 3.90 mm
LM386MMX-1
VSSOP (8)
3.00 mm × 3.00 mm
AM-FM Radio Amplifiers
Portable Tape Player Amplifiers
Intercoms
TV Sound Systems
Line Drivers
Ultrasonic Drivers
Small Servo Drivers
Power Converters
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Schematic
6
VS
15 k
7
BYPASS
15 k
GAIN
8
GAIN
1
15 k
5
VOUT
150
2
1.35 k
3
- INPUT
+ INPUT
50 k
50 k
4
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM386
SNAS545C – MAY 2004 – REVISED MAY 2017
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Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
3
3
4
4
4
5
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 6
Detailed Description .............................................. 7
8.1
8.2
8.3
8.4
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
7
7
7
7
9
Application and Implementation .......................... 8
9.1 Application Information.............................................. 8
9.2 Typical Application ................................................... 8
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 16
11.1 Layout Guidelines ................................................. 16
11.2 Layout Examples................................................... 16
12 Device and Documentation Support ................. 18
12.1
12.2
12.3
12.4
12.5
12.6
12.7
12.8
Device Support......................................................
Documentation Support .......................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
18
18
18
18
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (March 2017) to Revision C
Page
•
Changed devices LM386M-1/LM386MX-1 To: LM386 in the data sheet title ........................................................................ 1
•
Changed From: LM386N-4 To: Speaker Impedance in the Recommended Operating Conditions table .............................. 4
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 1 .......................................................................... 8
•
Changed kW To: kΩ in the Gain Control section ................................................................................................................... 8
•
Changed kW To: kΩ in the Input Biasing section................................................................................................................... 9
•
Changed Figure 11................................................................................................................................................................. 9
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 2 ........................................................................ 10
•
Changed Figure 13............................................................................................................................................................... 10
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 3 ........................................................................ 11
•
Changed Figure 15............................................................................................................................................................... 11
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 4 ........................................................................ 12
•
Changed Figure 17............................................................................................................................................................... 12
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 5 ........................................................................ 13
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 6 ........................................................................ 14
•
Changed Figure 21............................................................................................................................................................... 14
•
Changed From: 5 Ω to 12 Ω To: 5 V to 12 V for Supply Voltage in Table 7 ........................................................................ 15
•
Changed Figure 23............................................................................................................................................................... 15
Changes from Revision A (May 2004) to Revision B
Page
•
Added LM386MX-1 device to the data sheet. ....................................................................................................................... 1
•
Added Device Information, Application and Implementation, Power Supply Recommendation, Layout, and Device
and Documentation Support sections..................................................................................................................................... 1
•
Inserted Functional Block Diagram......................................................................................................................................... 7
2
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5 Pin Configuration and Functions
D Package
8-Pin MSOP
Top View
GAIN
- INPUT
+ INPUT
GND
1
8
2
7
3
6
4
5
GAIN
BYPASS
VS
VOUT
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
NO.
GAIN
1
–
Gain setting pin
–INPUT
2
I
Inverting input
+INPUT
3
I
Noninverting input
GND
4
P
Ground reference
VOUT
5
O
Output
VS
6
P
Power supply voltage
BYPASS
7
O
Bypass decoupling path
GAIN
8
–
Gain setting pin
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
Supply Voltage, VCC
15
LM386N-4
22
LM386N
Package Dissipation
MAX
LM386N-1/-3, LM386M-1
UNIT
V
1.25
LM386M
0.73
LM386MM-1
0.595
W
Input Voltage, VI
–0.4
0.4
V
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±1000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply Voltage
4
12
LM386N-4
5
18
Speaker Impedance
4
VI
Analog input voltage
–0.4
0.4
V
TA
Operating free-air temperature
0
70
°C
VCC
V
V
Ω
6.4 Thermal Information
THERMAL METRIC (1)
LM386
LM386
LM386
D (SOIC)
DGK (VSSOP)
P (PDIP)
8
8
8
UNIT
RθJA
Junction-to-ambient thermal resistance
115.7
169.3
53.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
59.7
73.1
42.1
°C/W
RθJB
Junction-to-board thermal resistance
56.2
100.2
30.6
°C/W
ψJT
Junction-to-top characterization parameter
12.4
9.2
19.0
°C/W
ψJB
Junction-to-board characterization parameter
55.6
99.1
50.5
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
VS
Operating Supply Voltage
IQ
Quiescent Current
POUT
Output Power
TEST CONDITIONS
TYP
MAX
4
12
LM386N-4
5
18
VS = 6 V, VIN = 0
4
VS = 6 V, RL = 8 Ω, THD = 10%
(LM386N-1, LM386M-1, LM386MM-1)
250
325
VS = 9 V, RL = 8 Ω, THD = 10%
(LM386N-3)
500
700
VS = 16 V, RL = 32 Ω, THD = 10%
(LM386N-4)
700
100
VS = 6 V, f = 1 kHz
26
10 µF from Pin 1 to 8
46
AV
Voltage Gain
BW
Bandwidth
VS = 6 V, Pins 1 and 8 Open
THD
Total Harmonic Distortion
VS = 6 V, RL = 8 Ω, POUT = 125 mW
f = 1 kHz, Pins 1 and 8 Open
PSRR
Power Supply Rejection Ratio
VS = 6 V, f = 1 kHz, CBYPASS = 10 μF
Pins 1 and 8 Open, Referred to Output
RIN
Input Resistance
IBIAS
Input Bias Current
4
MIN
LM386N-1, -3, LM386M-1, LM386MM-1
VS = 6 V, Pins 2 and 3 Open
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300
8
UNIT
V
mA
mW
dB
kHz
0.2%
50
dB
50
kΩ
250
nA
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6.6 Typical Characteristics
Figure 1. Supply Current vs Supply Voltage
Figure 2. Power Supply Rejection vs Frequency
Figure 4. Voltage Gain vs Frequency
Figure 3. Output Voltage vs Supply Voltage
Figure 5. Total Harmonic Distortion vs Frequency
Figure 6. Total Harmonic Distortion vs Power Out
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Typical Characteristics (continued)
Figure 7. Device Dissipation vs Output Power
Figure 8. Device Dissipation vs Output Power
Figure 9. Device Dissipation vs Output Power
7 Parameter Measurement Information
All parameters are measured according to the conditions described in the Specifications section.
6
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8 Detailed Description
8.1 Overview
The LM386 is a mono low voltage amplifier that can be used in a variety of applications. It can drive loads from 4
Ω to 32 Ω. The gain is internally set to 20 but it can be modified from 20 to 200 by placing a resistor and
capacitor between pins 1 and 8. This device comes in three different 8-pin packages as PDIP, SOIC and VSSOP
to fit in different applications.
8.2 Functional Block Diagram
Gain
Circuitry
+
Bias
Circuitry
Bypass
8.3 Feature Description
There is an internal 1.35-KΩ resistor that sets the gain of this device to 20. The gain can be modified from 20 to
200. Detailed information about gain setting can be found in the Detailed Design Procedure section.
8.4 Device Functional Modes
As this is an Op Amp it can be used in different configurations to fit in several applications. The internal gain
setting resistor allows the LM386 to be used in a very low part count system. In addition a series resistor can be
placed between pins 1 and 5 to modify the gain and frequency response for specific applications.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
Below are shown different setups that show how the LM386 can be implemented in a variety of applications.
9.2 Typical Application
9.2.1 LM386 with Gain = 20
Figure 10 shows the minimum part count application that can be implemented using LM386. Its gain is internally
set to 20.
2
6
-
1
250 µF
+
8
LM386
VIN
3
10 k
5
7
0.05 µF
+
4
10
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Figure 10. LM386 with Gain = 20
9.2.1.1 Design Requirements
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.1.2 Detailed Design Procedure
9.2.1.2.1 Gain Control
To make the LM386 a more versatile amplifier, two pins (1 and 8) are provided for gain control. With pins 1 and 8
open the 1.35-kΩ resistor sets the gain at 20 (26 dB). If a capacitor is put from pin 1 to 8, bypassing the 1.35-kΩ
resistor, the gain will go up to 200 (46 dB). If a resistor is placed in series with the capacitor, the gain can be set
to any value from 20 to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1
to ground.
Additional external components can be placed in parallel with the internal feedback resistors to tailor the gain and
frequency response for individual applications. For example, we can compensate poor speaker bass response by
frequency shaping the feedback path. This is done with a series RC from pin 1 to 5 (paralleling the internal
15-kΩ resistor). For 6 dB effective bass boost: R ~= 15 kΩ, the lowest value for good stable operation is R = 10
kΩ if pin 8 is open. If pins 1 and 8 are bypassed then R as low as 2 kΩ can be used. This restriction is because
the amplifier is only compensated for closed-loop gains greater than 9.
8
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9.2.1.2.2 Input Biasing
The schematic shows that both inputs are biased to ground with a 50 kΩ resistor. The base current of the input
transistors is about 250 nA, so the inputs are at about 12.5 mV when left open. If the dc source resistance driving
the LM386 is higher than 250 kΩ it will contribute very little additional offset (about 2.5 mV at the input, 50 mV at
the output). If the dc source resistance is less than 10 kΩ, then shorting the unused input to ground will keep the
offset low (about 2.5 mV at the input, 50 mV at the output). For dc source resistances between these values we
can eliminate excess offset by putting a resistor from the unused input to ground, equal in value to the dc source
resistance. Of course all offset problems are eliminated if the input is capacitively coupled.
When using the LM386 with higher gains (bypassing the 1.35 kΩ resistor between pins 1 and 8) it is necessary
to bypass the unused input, preventing degradation of gain and possible instabilities. This is done with a 0.1 μF
capacitor or a short to ground depending on the dc source resistance on the driven input.
9.2.1.3 Application Curve
Figure 11. Supply Current vs Supply Voltage
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9.2.2 LM386 with Gain = 200
VS
2
10 µF
+
6
-
1
250 µF
+
8
LM386
VIN
3
10 k
5
7
0.05 µF
+
4
BYPASS
10
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Figure 12. LM386 with Gain = 200
9.2.2.1 Design Requirements
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.2.2 Detailed Design Procedure
The Detailed Design Procedure can be found in the Detailed Design Procedure section.
9.2.2.3 Application Curve
Figure 13. Supply Current vs Supply Voltage
10
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9.2.3 LM386 with Gain = 50
VS
2
1.2 k
6
-
10 µF
1
250 µF
+
8
LM386
VIN
3
10 k
5
7
+
4
10
BYPASS
0.05 µF
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Figure 14. LM386 with Gain = 50
9.2.3.1 Design Requirements
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.3.2 Detailed Design Procedure
The Detailed Design Procedure can be found in the Detailed Design Procedure section.
9.2.3.3 Application Curve
Figure 15. Supply Current vs Supply Voltage
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9.2.4 Low Distortion Power Wienbridge Oscillator
390
10 µF
+
VS
2
6
-
1
50 µF
+
8
ELDEMA
CF-S-2158
LM386
3
3 V ± 15mA
4
+
VO
5
7
0.01 µF
BYPASS
RL
0.05 µF
10
47 k
f = 1 kHz
0.01 µF
4.7 k
Copyright © 2017, Texas Instruments Incorporated
Figure 16. Low Distortion Power Wienbridge Oscillator
9.2.4.1 Design Requirements
Table 4. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.4.2 Detailed Design Procedure
The Detailed Design Procedure can be found in the Detailed Design Procedure section.
9.2.4.3 Application Curve
Figure 17. Supply Current vs Supply Voltage
12
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9.2.5 LM386 with Bass Boost
VS
2
6
-
BYPASS
7
250 µF
+
LM386
VIN
1
3
10 k
8
+
4
VO
5
RL
0.033 µF
0.05 µF
10 k
10 Ÿ
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Figure 18. LM386 with Bass Boost
9.2.5.1 Design Requirements
Table 5. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.5.2 Detailed Design Procedure
The Detailed Design Procedure can be found in the Detailed Design Procedure section.
9.2.5.3 Application Curve
Figure 19. Voltage Gain vs Frequency
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9.2.6 Square Wave Oscillator
VS
2
6
-
30 k
1
0.1 µF
8
LM386
3
+
50 µF
+
5
VO
RL
4
10 k
1k
f = 1 kHz
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Figure 20. Square Wave Oscillator
Table 6. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.6.1 Detailed Design Procedure
The Detailed Design Procedure can be found in the Detailed Design Procedure section.
9.2.6.2 Application Curve
Figure 21. Supply Current vs Supply Voltage
14
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9.2.7 AM Radio Power Amplifier
VS
CC
FROM
DETECTOR
VOL
10 k
0.05 µF
R1
10 k
10 µF
2
6
-
+
BYPASS
1
C1
2200 pF
LM386
8 5
FERRITE
BEAD
250 µF
+
7
3
+
+
4
10 µF
+
47
8Ÿ
SPEAKER
0.05 µF
Copyright © 2017, Texas Instruments Incorporated
Figure 22. AM Radio Power Amplifier
9.2.7.1 Design Requirements
Table 7. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Load Impedance
4 Ω to 32 Ω
Supply Voltage
5 V to 12 V
9.2.7.2 Detailed Design Procedure
The Detailed Design Procedure can be found in the Detailed Design Procedure section.
9.2.7.3 Application Curve
Figure 23. Supply Current vs Supply Voltage
10 Power Supply Recommendations
The LM386 is specified for operation up to 12 V or 18 V. The power supply should be well regulated and the
voltage must be within the specified values. It is recommended to place a capacitor to GND close to the LM386
power supply pin.
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11 Layout
11.1 Layout Guidelines
Place all required components as close as possible to the device. Use short traces for the output to the speaker
connection. Route the analog traces far from the digital signal traces and avoid crossing them.
11.2 Layout Examples
250uF
OUTPUT
0.05uF
LM386
10
INPUT
Connection to ground plane
Connection to power 5V
Top layer traces
Top layer ground plane
Figure 24. Layout Example for Minimum Parts Gain = 20 dB on PDIP package
250uF
OUTPUT
0.05uF
LM386
10
INPUT
Connection to ground plane
Connection to power 5V
Top layer traces
Top layer ground plane
Figure 25. Layout Example for Minimum Parts Gain = 20 dB on SOIC package
16
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Layout Examples (continued)
250uF
OUTPUT
0.05uF
LM386
10
INPUT
Connection to ground plane
Connection to power 5V
Top layer traces
Top layer ground plane
Figure 26. Layout Example for Minimum Parts Gain = 20 dB on VSSOP package
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Development Support
12.2 Documentation Support
12.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
Table 8. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LM386M-1
Click here
Click here
Click here
Click here
Click here
LM386MX-1
Click here
Click here
Click here
Click here
Click here
12.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates — go to the product folder for your device on ti.com. In the
upper right-hand corner, click the Alert me button to register and receive a weekly digest of product information
that has changed (if any). For change details, check the revision history of any revised document.
12.5 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
18
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SNAS545C – MAY 2004 – REVISED MAY 2017
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Copyright © 2004–2017, Texas Instruments Incorporated
Product Folder Links: LM386
19
PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM386M-1/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM386
M-1
LM386MMX-1/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
Z86
LM386MX-1/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM386
M-1
LM386N-1/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
CU SN | Call TI
Level-1-NA-UNLIM
0 to 70
LM
386N-1
LM386N-3/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
CU SN
Level-1-NA-UNLIM
0 to 70
LM
386N-3
LM386N-4/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
CU SN | Call TI
Level-1-NA-UNLIM
0 to 70
LM
386N-4
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2018
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-May-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM386MMX-1/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM386MX-1/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-May-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM386MMX-1/NOPB
VSSOP
DGK
8
3500
367.0
367.0
35.0
LM386MX-1/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
A
.004 [0.1] C
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.150
[3.81]
.189-.197
[4.81-5.00]
NOTE 3
4X (0 -15 )
4
5
B
8X .012-.020
[0.31-0.51]
.010 [0.25]
C A B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 -8
.016-.050
[0.41-1.27]
DETAIL A
(.041)
[1.04]
TYPICAL
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
6X (.050 )
[1.27]
SYMM
5
4
(R.002 ) TYP
[0.05]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
METAL
SOLDER MASK
OPENING
EXPOSED
METAL
.0028 MAX
[0.07]
ALL AROUND
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
EXPOSED
METAL
.0028 MIN
[0.07]
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
6X (.050 )
[1.27]
SYMM
5
4
(R.002 ) TYP
[0.05]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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