Texas Instruments | ISO7840x High-Performance, 8000-VPK Reinforced Quad-Channel Digital Isolator (Rev. B) | Datasheet | Texas Instruments ISO7840x High-Performance, 8000-VPK Reinforced Quad-Channel Digital Isolator (Rev. B) Datasheet

Texas Instruments ISO7840x High-Performance, 8000-VPK Reinforced Quad-Channel Digital Isolator (Rev. B) Datasheet
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ISO7840, ISO7840F
SLLSEN2B – JULY 2015 – REVISED APRIL 2016
ISO7840x High-Performance, 8000-VPK Reinforced Quad-Channel Digital Isolator
1 Features
3 Description
•
•
•
•
•
The ISO7840x device is a high-performance, quadchannel digital isolator with a 8000-VPK isolation
voltage. This device has reinforced isolation
certifications according to VDE, CSA, CQC, and TUV.
The isolator provides high electromagnetic immunity
and low emissions at low-power consumption, while
isolating CMOS or LVCMOS digital I/Os. Each
isolation channel has a logic input and output buffer
separated by a silicon-dioxide (SiO2) insulation
barrier.
1
•
•
•
•
•
•
•
•
Signaling Rate: Up to 100 Mbps
Wide Supply Range: 2.25 V to 5.5 V
2.25-V to 5.5-V Level Translation
Wide Temperature Range: –55°C to +125°C
Low-Power Consumption, Typical 1.7 mA per
Channel at 1 Mbps
Low Propagation Delay: 11 ns Typical
(5-V Supplies)
Industry leading CMTI (Min): ±100 kV/μs
Robust Electromagnetic Compatibility (EMC)
System-Level ESD, EFT, and Surge Immunity
Low Emissions
Isolation Barrier Life: >40 Years
Wide Body SOIC-16 Package and Extra-Wide
Body SOIC-16 Package Options
Safety and Regulatory Approvals:
– 8000-VPK Reinforced Isolation per DIN V VDE
V 0884-10 (VDE V 0884-10):2006-12
– 5.7-kVRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950-1 and IEC 60601-1 End Equipment
Standards
– CQC Certification per GB4943.1-2011
– TUV Certification per EN 61010-1 and EN
60950-1
– All DW Package Certifications Complete;
DWW Package Certifications Complete per
UL, VDE, TUV and Planned for CSA and CQC
2 Applications
•
•
•
•
•
•
Industrial Automation
Motor Control
Power Supplies
Solar Inverters
Medical Equipment
Hybrid Electric Vehicles
This device comes with enable pins that can be used
to put the respective outputs in high impedance for
multi-master driving applications and to reduce power
consumption. The ISO7840 device has four forward
and zero reverse-direction channels. If the input
power or signal is lost, the default output is high for
the ISO7840 device and low for the ISO7840F
device. See the Device Functional Modes section for
further details.
Used in conjunction with isolated power supplies, this
device helps prevent noise currents on a data bus or
other circuits from entering the local ground and
interfering with or damaging sensitive circuitry.
Through innovative chip design and layout
techniques, electromagnetic compatibility of the
ISO7840 device has been significantly enhanced to
ease system-level ESD, EFT, surge, and emissions
compliance.
The ISO7840 device is available in 16-pin SOIC
wide-body (DW) and extra-wide body (DWW)
packages.
Device Information(1)
PART NUMBER
ISO7840
ISO7840F
PACKAGE
BODY SIZE (NOM)
DW (16)
10.30 mm × 7.50 mm
DWW (16)
10.30 mm × 14.0 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VCCI
Isolation
Capacitor
VCCO
INx
OUTx
ENx
GNDI
GNDO
VCCI and GNDI are supply and ground
connections respectively for the input
channels.
VCCO and GNDO are supply and ground
connections respectively for the output
channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7840, ISO7840F
SLLSEN2B – JULY 2015 – REVISED APRIL 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6.14
6.15
6.16
6.17
6.18
1
1
1
2
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Power Ratings........................................................... 6
Insulation Specifications............................................ 7
Safety-Related Certifications..................................... 8
Safety Limiting Values .............................................. 8
Electrical Characteristics—5-V Supply ..................... 9
Supply Characteristics—5-V Supply ....................... 9
Electrical Characteristics—3.3-V Supply .............. 10
Supply Current Characteristics—3.3-V Supply ..... 10
Electrical Characteristics—2.5-V Supply .............. 11
Supply Current Characteristics—2.5-V Supply ..... 11
Switching Characteristics—5-V Supply................. 12
Switching Characteristics—3.3-V Supply.............. 12
Switching Characteristics—2.5-V Supply.............. 13
Insulation Characteristics Curves ......................... 14
6.19 Typical Characteristics .......................................... 15
7
8
Parameter Measurement Information ................ 16
Detailed Description ............................................ 18
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
18
18
19
20
Application and Implementation ........................ 21
9.1 Application Information............................................ 21
9.2 Typical Application .................................................. 21
10 Power Supply Recommendations ..................... 23
11 Layout................................................................... 24
11.1 Layout Guidelines ................................................. 24
11.2 Layout Example .................................................... 24
12 Device and Documentation Support ................. 25
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
25
25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 26
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (March 2016) to Revision B
Page
•
Added Features 2.25 V to 5.5 V Level Translation ................................................................................................................ 1
•
Changed the number of years for the isolation barrier life in the Features section .............................................................. 1
•
VDE certification is now complete ......................................................................................................................................... 1
•
Changed the input-to-output test voltage parameter to apparent charge in the Insulation Specifications ............................ 7
•
Changed VCCO to VCCI for the minimum value of the input threshold voltage hysteresis parameter in all electrical
characteristics tables .............................................................................................................................................................. 9
•
Added VCM to the test condition of the common-mode transient immunity parameter in all electrical characteristics tables 9
•
Added the lifetime projection graphs for DW and DWW packages to the Safety Limiting Values section ......................... 14
Changes from Original (July 2015) to Revision A
Page
•
Changed Features From: Industry leading CMTI To: Industry leading CMTI (MIN) ............................................................. 1
•
Changed the Safety and Regulatory Approvals list of Features ............................................................................................ 1
•
Added Features "TUV Certification per EN 61010-1 and EN 60950-1" ................................................................................. 1
•
Changed text in the first paragraph of the Description From: "certifications according to VDE, CSA, and CQC". To:
"certifications according to VDE, CSA, CQC, and TUV." ...................................................................................................... 1
•
Added the DWW pinout image ............................................................................................................................................... 4
•
Added the DWW package to the Thermal Information .......................................................................................................... 6
•
Changed Package Insulation and Safety-Related Specifications, added the 16-DWW Package information....................... 7
•
Added the DWW package information, added "Climatic category", and deleted Note 1 in Insulation Characteristics ......... 7
•
Added Note 1 to Insulation Characteristics ........................................................................................................................... 7
2
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SLLSEN2B – JULY 2015 – REVISED APRIL 2016
•
Changed IEC 60664-1 Ratings Table ................................................................................................................................... 7
•
Added the TUV and DWW package information to the Regulatory Information section and Regulatory Information.
Deleted Note 1 in Regulatory Information .............................................................................................................................. 8
•
Changed the Supply Current section of Supply Characteristics—5-V Supply ....................................................................... 9
•
Changed the Supply Current section of Supply Current Characteristics—3.3-V Supply ..................................................... 10
•
Changed the Supply Current section ofSupply Current Characteristics—2.5-V Supply ..................................................... 11
•
Changed Device I/O Schematics ......................................................................................................................................... 20
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5 Pin Configuration and Functions
DW and DWW Packages
16-Pin SOIC
Top View
1
16 VCC2
GND1 2
15 GND2
VCC1
3
14 OUTA
INB
4
INC
5
IND
6
11 OUTD
NC
7
10
ISOLATION
INA
GND1 8
13 OUTB
12 OUTC
EN2
9 GND2
Pin Functions
PIN
NAME
EN2
GND1
GND2
NO.
10
2
8
9
15
I/O
I
DESCRIPTION
Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and in highimpedance state when EN2 is low.
—
Ground connection for VCC1
—
Ground connection for VCC2
INA
3
I
Input, channel A
INB
4
I
Input, channel B
INC
5
I
Input, channel C
IND
6
I
Input, channel D
NC
7
—
Not connected
OUTA
14
O
Output, channel A
OUTB
13
O
Output, channel B
OUTC
12
O
Output, channel C
OUTD
11
O
Output, channel D
VCC1
1
—
Power supply, VCC1
VCC2
16
—
Power supply, VCC2
4
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6 Specifications
6.1 Absolute Maximum Ratings
See
(1)
VCC1,
VCC2
Supply voltage (2)
Voltage
MAX
–0.5
6
–0.5
VCCX + 0.5
–0.5
VCCX + 0.5 (3)
–0.5
(3)
VCCX + 0.5
–15
Surge immunity
(1)
(2)
(3)
V
(3)
OUTx
Output current
Tstg
UNIT
INx
EN2
IO
MIN
Storage temperature
–65
V
15
mA
12.8
kV
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
Maximum voltage must not exceed 6 V
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±6000
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
VCC1,
VCC2
Supply voltage
2.25
VCCO
IOH
High-level output current
Low-level output current
(1)
=5V
(1)
MAX
5.5
= 2.5 V
mA
–1
4
VCCO (1) = 3.3 V
2
VCCO
V
–2
VCCO (1) = 5 V
(1)
UNIT
–4
VCCO (1) = 3.3 V
VCCO
IOL
NOM
= 2.5 V
mA
1
VCCI
(1)
High-level input voltage
VIL
Low-level input voltage
0
0.3 × VCCI (1)
DR
Signaling rate
0
100
Mbps
TJ
Junction temperature (2)
–55
150
°C
TA
Ambient temperature
–55
125
°C
(1)
(2)
0.7 × VCCI
(1)
VIH
25
V
V
VCCI = Input-side VCC; VCCO = Output-side VCC.
To maintain the recommended operating conditions for TJ, see Thermal Information.
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6.4 Thermal Information
ISO7840
THERMAL METRIC (1)
DW (SOIC)
DWW (SOIC)
16 Pins
16 Pins
UNIT
RθJA
Junction-to-ambient thermal resistance
78.9
78.9
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
41.6
41.1
°C/W
RθJB
Junction-to-board thermal resistance
43.6
49.5
°C/W
ψJT
Junction-to-top characterization parameter
15.5
15.2
°C/W
ψJB
Junction-to-board characterization parameter
43.1
48.8
°C/W
N/A
N/A
°C/W
RθJC(bottom) Junction-to-case(bottom) thermal resistance
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Power Ratings
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, input a 50 MHz 50% duty cycle square wave
MAX
UNIT
PD
Maximum power dissipation by ISO7840x
PARAMETER
200
mW
PD1
Maximum power dissipation by side-1 of
ISO7840x
40
mW
PD2
Maximum power dissipation by side-2 of
ISO7840x
160
mW
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TEST CONDITIONS
MIN
TYP
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6.6 Insulation Specifications
PARAMETER
TEST CONDITIONS
External clearance (1)
CPG
SPECIFICATION
UNIT
DW
DWW
Shortest pin-to-pin distance through air
>8
>14.5
mm
External creepage (1)
Shortest pin-to-pin distance across the package
surfaceHigh Voltage Feature Description
>8
>14.5
mm
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
>21
>21
μm
CTI
Comparative tracking index
DIN EN 60112 (VDE 0303-11); IEC 60112; UL 746A
>600
>600
V
I
I
Rated mains voltage ≤ 600 VRMS
I–IV
I–IV
Rated mains voltage ≤ 1000 VRMS
I–III
I–IV
2121
2828
VPK
1500
2000
VRMS
GENERAL
CLR
Material group
Overvoltage category per IEC
60664-1
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 (2)
VIORM
Maximum repetitive peak isolation
voltage
VIOWM
AC voltage (sine wave); Time dependent dielectric
Maximum isolation working voltage breakdown (TDDB) Test, see Figure 1 and Figure 2
DC voltage
2121
2828
VDC
8000
8000
VPK
8000
8000
VPK
Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 2545 VPK (DW) and 3394 VPK
(DWW), tm = 10 s
≤5
≤5
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.6 × VIORM = 3394 VPK (DW) and 4525 VPK
(DWW), tm = 10 s
≤5
≤5
Method b1: At routine test (100% production) and
preconditioning (type test)
Vini = VIOTM, tini = 1 s;
Vpd(m) = 1.875 × VIORM = 3977 VPK (DW) and 5303 VPK
(DWW), tm = 1 s
≤5
≤5
VIO = 0.4 × sin (2πft), f = 1 MHz
2
2
VIOTM
Maximum transient isolation
voltage
VTEST = VIOTM
t = 60 s (qualification)
t= 1 s (100% production)
VIOSM
Maximum surge isolation voltage (3)
Test method per IEC 60065, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM = 12800 VPK (qualification)
qpd
Apparent charge
(4)
CIO
Barrier capacitance, input to
output (5)
RIO
Isolation resistance, input to
output (5)
>1012
>1012
11
>1011
9
>10
>109
Pollution degree
2
2
Climatic category
55/125/21
55/125/21
5700
5700
VIO = 500 V, TA = 25°C
VIO = 500 V, 100°C ≤ TA ≤ 125°C
VIO = 500 V at TS = 150°C
>10
pC
pF
Ω
UL 1577
VISO
(1)
(2)
(3)
(4)
(5)
Withstand isolation voltage
VTEST = VISO = 5700 VRMS, t = 60 s (qualification),
VTEST = 1.2 × VISO = 6840 VRMS, t = 1 s (100%
production)
VRMS
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on
the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications.
This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by
means of suitable protective circuits.
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Apparent charge is electrical discharge caused by a partial discharge (pd).
All pins on each side of the barrier tied together creating a two-pin device.
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6.7 Safety-Related Certifications
Certifications for the DW package are complete. DWW package certifications are complete for UL, VDE and TUV and
planned for CSA and CQC.
VDE
Certified according to DIN
V VDE V 0884-10 (VDE V
0884-10):2006-12 and DIN
EN 60950-1 (VDE 0805
Teil 1):2011-01
CSA
UL
Approved under CSA
Component Acceptance
Notice 5A, IEC 60950-1 and
IEC 60601-1
CQC
TUV
Certified according to GB
4943.1-2011
Certified according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
Reinforced insulation per CSA
60950-1-07+A1+A2 and IEC
60950-1 2nd Ed., 800 VRMS
Reinforced insulation
(DW package) and 1450 VRMS
Maximum transient
isolation voltage, 8000 VPK; (DWW package) max working
voltage (pollution degree 2,
Maximum repetitive peak
Single protection, 5700
isolation voltage, 2121 VPK material group I);
VRMS
(DW), 2828 VPK (DWW);
2 MOPP (Means of Patient
Maximum surge isolation
Protection) per CSA 60601voltage, 8000 VPK
1:14 and IEC 60601-1 Ed. 3.1,
250 VRMS (354 VPK) max
working voltage (DW package)
Reinforced Insulation,
Altitude ≤ 5000 m, Tropical
Climate, 250 VRMS
maximum working voltage
5700 VRMS Reinforced insulation per
EN 61010-1:2010 (3rd Ed) up to
working voltage of 600 VRMS (DW
package) and 1000 VRMS (DWW
package)
5700 VRMS Reinforced insulation per
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to working
voltage of 800 VRMS (DW package) and
1450 VRMS (DWW package)
Certificate number:
40040142
Certificate number:
CQC15001121716
Client ID number: 77311
Master contract number:
220991
Certified according to UL
1577 Component
Recognition Program
File number: E181974
6.8 Safety Limiting Values
Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier potentially leading to secondary system failures.
PARAMETER
IS
Safety input, output, or supply
current
PS
Safety input, output, or total
power
TS
Maximum safety temperature
TEST CONDITIONS
MIN
TYP
MAX
RθJA = 78.9°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C
288
RθJA = 78.9°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C
440
RθJA = 78.9°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C
576
RθJA = 78.9°C/W, TJ = 150°C, TA = 25°C
UNIT
mA
1584
mW
150
°C
The maximum safety temperature is the maximum junction temperature specified for the device. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines
the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information is that of a
device installed on a high-K test board for leaded surface-mount packages. The power is the recommended
maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
8
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6.9 Electrical Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCCO – 0.4
VCCO – 0.2
MAX
UNIT
VOH
High-level output voltage
IOH = –4 mA; see Figure 11
VOL
Low-level output voltage
IOL = 4 mA; see Figure 11
V
VI(HYS)
Input threshold voltage
hysteresis
IIH
High-level input current
VIH = VCCI at INx or EN2
IIL
Low-level input current
VIL = 0 V at INx or EN2
–10
μA
CMTI
Common-mode transient
immunity
VI = VCCI or 0 V, VCM = 1500 V; see
Figure 14
100
kV/μs
CI
Input capacitance
VI = VCC/2 + 0.4 × sin (2πft), f = 1 MHz, VCC =
5V
0.2
0.4
0.1 × VCCI
V
V
10
2
μA
pF
6.10 Supply Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
SUPPLY
CURRENT
TEST CONDITIONS
MAX
ICC1
1.3
2
ICC2
0.4
0.6
EN2 = 0 V, VI = VCCI (ISO7840F), VI = 0
V (ISO7840) EN2 = 0 V
ICC1
6
8.5
ICC2
0.4
0.6
VI = 0 V (ISO7840F), VI = VCCI
(ISO7840)
ICC1
1.3
2
ICC2
2.2
3.1
VI = VCCI (ISO7840F), VI = 0 V
(ISO7840)
ICC1
5.9
8.6
ICC2
2.5
3.3
ICC1
3.6
5.3
ICC2
2.6
3.7
ICC1
3.8
5.4
ICC2
4.5
5.9
DC signal
Supply current
1 Mbps
10 Mbps
DW package
100 Mbps
DWW package
(1)
TYP
EN2 = 0 V, VI = 0 V (ISO7840F), VI =
VCCI (1) (ISO7840)
Disable
All channels switching with
square wave clock input;
CL = 15 pF
MIN
ICC1
5.1
5.9
ICC2
23.8
27.4
ICC1
5.1
5.9
ICC2
23.8
28.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
VCCI = Input-side VCC; VCCO = Output-side VCC.
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6.11 Electrical Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCCO – 0.4
VCCO – 0.2
MAX
UNIT
VOH
High-level output voltage
IOH = –2 mA; see Figure 11
VOL
Low-level output voltage
IOL = 2 mA; see Figure 11
VI(HYS)
Input threshold voltage
hysteresis
IIH
High-level input current
VIH = VCCI at INx or EN2
IIL
Low-level input current
VIL = 0 V at INx or EN2
–10
μA
CMTI
Common-mode transient
immunity
VI = VCCI or 0 V, VCM = 1500 V; see Figure 14
100
kV/μs
0.2
V
0.4
0.1 × VCCI
V
V
10
μA
6.12 Supply Current Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
Disable
DC signal
Supply current
SUPPLY
CURRENT
10
MAX
ICC1
1.3
2
ICC2
0.4
0.6
EN2 = 0 V, VI = VCCI (1) (ISO7840F), VI
= 0 V (ISO7840)
ICC1
6
8.5
ICC2
0.4
0.6
VI = 0 V (ISO7840F), VI = VCCI (1)
(ISO7840)
ICC1
1.3
2
ICC2
2.2
3
VI = VCCI (1) (ISO7840F), VI = 0 V
(ISO7840)
ICC1
5.9
8.6
ICC2
2.4
3.3
ICC1
3.6
5.3
ICC2
2.5
3.6
ICC1
3.7
5.3
ICC2
3.9
5.1
ICC1
4.5
5.8
ICC2
17.7
20.6
10 Mbps
100 Mbps
(1)
TYP
EN2 = 0 V, VI = 0 V (ISO7840F), VI =
VCCI (1) (ISO7840)
1 Mbps
All channels switching with
square wave clock input;
CL = 15 pF
MIN
UNIT
mA
mA
mA
mA
mA
mA
mA
VCCI = Input-side VCC; VCCO = Output-side VCC.
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6.13 Electrical Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCCO – 0.4
VCCO – 0.2
MAX
UNIT
VOH
High-level output voltage
IOH = –1 mA; see Figure 11
VOL
Low-level output voltage
IOL = 1 mA; see Figure 11
VI(HYS)
Input threshold voltage
hysteresis
IIH
High-level input current
VIH = VCCI at INx or EN2
IIL
Low-level input current
VIL = 0 V at INx or EN2
–10
μA
CMTI
Common-mode transient
immunity
VI = VCCI or 0 V, VCM = 1500 V; see Figure 14
100
kV/μs
0.2
V
0.4
V
0.1 × VCCI
V
10
μA
6.14 Supply Current Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
Disable
DC signal
Supply current
SUPPLY
CURRENT
MAX
ICC1
1.3
2
ICC2
0.4
0.6
EN2 = 0 V, VI = VCCI (1) (Devices with
suffix F), VI = 0 V (Devices without suffix
F)
ICC1
6
8.5
ICC2
0.4
0.6
VI = 0 V (Devices with suffix F), VI =
VCCI (1) (Devices without suffix F)
ICC1
1.3
2
ICC2
2.2
3
VI = VCCI (1) (Devices with suffix F), VI =
0 V (Devices without suffix F)
ICC1
5.9
8.6
ICC2
2.4
3.3
ICC1
3.6
5.3
ICC2
2.5
3.5
ICC1
3.7
5.3
ICC2
3.5
4.7
ICC1
4.4
5.7
ICC2
13.9
16.4
10 Mbps
100 Mbps
(1)
TYP
EN2 = 0 V, VI = 0 V (Devices with suffix
F), VI = VCCI (1) (Devices without suffix F)
1 Mbps
All channels switching
with square wave clock
input;
CL = 15 pF
MIN
UNIT
mA
mA
mA
mA
mA
mA
mA
VCCI = Input-side VCC; VCCO = Output-side VCC.
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6.15 Switching Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
MIN
TYP
MAX
6
11
16
ns
0.55
4.1
ns
2.5
ns
4.5
ns
1.7
3.9
ns
1.9
3.9
ns
tPHZ
Disable propagation delay, high-to-high impedance
output
12
20
ns
tPLZ
Disable propagation delay, low-to-high impedance
output
12
20
ns
10
20
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low
output for ISO7840
2
2.5
μs
Enable propagation delay, high impedance-to-low
output for ISO7840F
10
20
ns
0.2
9
μs
tPLH, tPHL
Propagation delay time
PWD
Pulse width distortion (1) |tPHL – tPLH|
tsk(o)
Channel-to-channel output skew time (2)
tsk(pp)
Part-to-part skew time (3)
tr
Output signal rise time
tf
Output signal fall time
Same-direction channels
See Figure 11
Enable propagation delay, high impedance-to-high
output for ISO7840F
tPZL
tfs
Default output delay time from input power loss
tie
(3)
See Figure 11
Enable propagation delay, high impedance-to-high
output for ISO7840
tPZH
(1)
(2)
TEST CONDITIONS
See Figure 12
Measured from the time VCC goes below 1.7 V. See
Figure 13
16
Time interval error
UNIT
2
0.90
– 1 PRBS data at 100 Mbps
ns
Also known as pulse skew.
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
6.16 Switching Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
MIN
TYP
MAX
6
10.8
16
ns
0.7
4.2
ns
2.2
ns
4.5
ns
0.8
3
ns
0.8
3
ns
tPHZ
Disable propagation delay, high-to-high impedance
output
17
32
ns
tPLZ
Disable propagation delay, low-to-high impedance
output
17
32
ns
17
32
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low
output for ISO7840
2
2.5
μs
Enable propagation delay, high impedance-to-low
output for ISO7840F
17
32
ns
0.2
9
μs
tPLH, tPHL
Propagation delay time
PWD
Pulse width distortion (1) |tPHL – tPLH|
tsk(o)
Channel-to-channel output skew time (2)
tsk(pp)
Part-to-part skew time (3)
tr
Output signal rise time
tf
Output signal fall time
tPZH
tPZL
tfs
tie
(1)
(2)
(3)
12
TEST CONDITIONS
See Figure 11
Same-direction channels
See Figure 11
Enable propagation delay, high impedance-to-high
output for ISO7840
Enable propagation delay, high impedance-to-high
output for ISO7840F
Default output delay time from input power loss
Time interval error
UNIT
See Figure 12
Measured from the time VCC goes below 1.7 V.
See Figure 13
16
2
0.91
– 1 PRBS data at 100 Mbps
ns
Also known as Pulse Skew.
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.17 Switching Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
7.5
11.7
17.5
ns
0.66
4.2
ns
2.2
ns
4.5
ns
1
3.5
ns
1.2
3.5
ns
tPHZ
Disable propagation delay, high-to-high impedance
output
22
45
ns
tPLZ
Disable propagation delay, low-to-high impedance
output
22
45
ns
18
45
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low
output for ISO7840
2
2.5
μs
Enable propagation delay, high impedance-to-low
output for ISO7840F
18
45
ns
0.2
9
μs
tPLH, tPHL
Propagation delay time
PWD
Pulse width distortion (1) |tPHL – tPLH|
tsk(o)
Channel-to-channel output skew time (2)
tsk(pp)
Part-to-part skew time (3)
tr
Output signal rise time
tf
Output signal fall time
tPZH
tPZL
tfs
tie
(1)
(2)
(3)
TEST CONDITIONS
See Figure 11
Same-direction Channels
See Figure 11
Enable propagation delay, high impedance-to-high
output for ISO7840
Enable propagation delay, high impedance-to-high
output for ISO7840F
Default output delay time from input power loss
See Figure 12
Measured from the time VCC goes below 1.7 V.
See Figure 13
16
Time interval error
2
– 1 PRBS data at 100 Mbps
0.91
ns
Also known as pulse skew.
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.18 Insulation Characteristics Curves
1.E+11
87.5%
1.E+9
1.E+9
1.E+8
1.E+8
1.E+7
1.E+6
1.E+5
Safety Margin Zone: 2400 VRMS, 63 Years
Operating Zone: 2000 VRMS, 34 Years
TDDB Line (<1 PPM Fail Rate)
1.E+10
Time to Fail (s)
Time to Fail (s)
1.E+10
1.E+11
Safety Margin Zone: 1800 VRMS, 254 Years
Operating Zone: 1500 VRMS, 135 Years
TDDB Line (<1 PPM Fail Rate)
87.5%
1.E+7
1.E+6
1.E+5
1.E+4
1.E+4
1.E+3
1.E+3
20%
1.E+2
1.E+2
1.E+1
500
1.E+1
400
20%
1500 2500 3500 4500 5500 6500 7500 8500 9500
Stress Voltage (VRMS)
TA upto 150°C
Operating lifetime = 135 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 1500 VRMS
TA upto 150°C
Figure 1. Reinforced Isolation Capacitor Life Time
Projection for Devices in DW Package
1800
Power
VCC1 = VCC2 = 2.75 V
VCC1 = VCC2 = 3.6 V
VCC1 = VCC2 = 5.5 V
1600
Safety Limiting Power (mW)
600
Safety Limiting Current (mA)
Operating lifetime = 34 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 2000 VRMS
Figure 2. Reinforced Isolation Capacitor Life Time
Projection for Devices in DWW Package
700
500
400
300
200
100
1400
1200
1000
800
600
400
200
0
0
0
50
100
150
Ambient Temperature (qC)
200
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0
50
D014
Figure 3. Thermal Derating Curve for Limiting Current per
VDE
14
1400 2400 3400 4400 5400 6400 7400 8400 9400
Stress Voltage (VRMS)
100
150
Ambient Temperature (qC)
200
D015
Figure 4. Thermal Derating Curve for Limiting Power per
VDE
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6.19 Typical Characteristics
24
10
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
16
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
8
Supply Current (mA)
Supply Current (mA)
20
12
8
6
4
2
4
0
0
0
25
50
TA = 25°C
75
100
Data Rate (Mbps)
125
150
0
CL = 15 pF
75
100
Data Rate (Mbps)
125
150
D002
CL = No Load
Figure 5. Supply Current vs Data Rate (With 15-pF Load)
Figure 6. Supply Current vs Data Rate (With No Load)
6
1
5
Low-Level Output Voltage (V)
High-Level Output Voltage (V)
50
TA = 25°C
VCC at 2.5 V
VCC at 3.3 V
VCC at 5.0 V
0.9
4
3
2
VCC at 2.5 V
VCC at 3.3 V
VCC at 5.0 V
1
0
-15
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-10
-5
High-Level Output Current (mA)
0
0
13
VCC1 Rising
VCC1 Falling
VCC2 Rising
VCC2 Falling
Propagation Delay Time (ns)
2.1
2.05
2
1.95
1.9
1.85
1.8
12
11
10
9
tPLH at 2.5 V
tPHL at 2.5 V
tPLH at 3.3 V
1.75
1.7
-50
D004
D001
Figure 8. Low-Level Output Voltage vs Low-Level Output
Current
2.25
2.15
15
TA = 25°C
Figure 7. High-Level Output Voltage vs High-level Output
Current
2.2
5
10
Low-Level Output Current (mA)
D003
TA = 25°C
Power Supply Under-Voltage Threshold (V)
25
D001
0
50
100
Free-Air Temperature (oC)
150
8
-60
-30
D005
Figure 9. Power Supply Undervoltage Threshold vs Free-Air
Temperature
0
30
60
Free-Air Temperature (oC)
tPHL at 3.3 V
tPLH at 5.0 V
tPHL at 5.0 V
90
120
D006
Figure 10. Propagation Delay Time vs Free-Air Temperature
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7 Parameter Measurement Information
Isolation Barrier
IN
Input
Generator
(See Note A)
VI
VCCI
50
VI
OUT
50%
50%
0V
tPLH
tPHL
CL
See Note B
VO
VOH
90%
50%
VO
50%
10%
VOL
tf
tr
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A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3 ns, ZO = 50 Ω. At the input, 50 Ω resistor is required to terminate Input Generator signal. It is not needed in
actual application.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 11. Switching Characteristics Test Circuit and Voltage Waveforms
VCCO
VCC
Isolation Barrier
IN
0V
VI
VO
tPZL
0V
tPLZ
VOH
EN
0.5 V
VO
50%
VOL
50
OUT
VCC
VO
VCC / 2
VCC / 2
VI
0V
tPZH
EN
CL
See Note B
VI
VCC / 2
VCC / 2
VI
CL
See Note B
IN
Input
Generator
(See Note A)
±1%
OUT
Isolation Barrier
Input
Generator
(See Note A)
3V
RL = 1 k
RL = 1 k
±1%
VOH
50%
VO
0.5 V
tPHZ
50
0V
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A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 10 kHz, 50% duty cycle,
tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 12. Enable/Disable Propagation Delay Time Test Circuit and Waveform
16
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Parameter Measurement Information (continued)
VI
VCC
VCC
Isolation Barrier
IN = 0 V (Devices without suffix F)
IN = VCC (Devices with suffix F)
IN
2.7 V
VI
OUT
0V
t fs
VO
fs high
VO
CL
VOH
50%
fs low V
OL
See Note A
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A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 13. Default Output Delay Time Test Circuit and Voltage Waveforms
VCCO
VCCI
S1
Isolation Barrier
C = 0.1 µF ±1%
IN
C = 0.1 µF ±1%
Pass-fail criteria:
The output must
remain stable.
OUT
+
EN
CL
See Note A
GNDI
+
VCM ±
VOH or VOL
±
GNDO
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A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 14. Common-Mode Transient Immunity Test Circuit
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8 Detailed Description
8.1 Overview
The ISO7840 device uses an ON-OFF keying (OOK) modulation scheme to transmit the digital data across a
silicon-dioxide based isolation barrier. The transmitter sends a high-frequency carrier across the barrier to
represent one digital state and sends no signal to represent the other digital state. The receiver demodulates the
signal after advanced signal conditioning and produces the output through a buffer stage. If the EN pin is low
then the output goes to high impedance. The ISO7840 device also incorporates advanced circuit techniques to
maximize the CMTI performance and minimize the radiated emissions because of the high-frequency carrier and
IO buffer switching. The conceptual block diagram of a digital capacitive isolator, Figure 15, shows a functional
block diagram of a typical channel.
8.2 Functional Block Diagram
Transmitter
Receiver
EN
TX IN
OOK
Modulation
TX Signal
Conditioning
Oscillator
SiO2 based
Capacitive
Isolation
Barrier
RX Signal
Conditioning
Envelope
Detection
RX OUT
Emissions
Reduction
Techniques
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Figure 15. Conceptual Block Diagram of a Digital Capacitive Isolator
Figure 16 shows a conceptual detail of how the ON-OFF keying scheme works.
TX IN
Carrier signal through
isolation barrier
RX OUT
Figure 16. On-Off Keying (OOK) Based Modulation Scheme
18
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8.3 Feature Description
Table 1 lists the device features.
Table 1. Device Features
PART NUMBER
ISO7840
ISO7840F
(1)
CHANNEL DIRECTION
4 Forward,
0 Reverse
4 Forward,
0 Reverse
RATED ISOLATION
MAXIMUM DATA RATE
DEFAULT OUTPUT
5700 VRMS / 8000 VPK
(1)
100 Mbps
High
5700 VRMS / 8000 VPK
(1)
100 Mbps
Low
See for detailed isolation ratings.
8.3.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge, and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO7840
device incorporates many chip-level design improvements for overall system robustness. Some of these
improvements include
• Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
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8.4 Device Functional Modes
Table 2 lists the ISO7840 functional modes.
Table 2. Function Table (1)
VCCI
VCCO
PU
PU
X
(1)
(2)
(3)
PU
INPUT
(INx) (2)
OUTPUT
ENABLE
(EN2)
OUTPUT
(OUTx)
H
H or open
H
L
H or open
L
Open
H or open
Default
X
L
Z
PD
PU
X
H or open
Default
X
PD
X
X
Undetermined
COMMENTS
Normal Operation:
A channel output assumes the logic state of its input.
Default mode: When INx is open, the corresponding channel output goes to
its default logic state. Default= High for ISO7840 and Low for ISO7840F.
A low value of Output Enable causes the outputs to be high-impedance
Default mode: When VCCI is unpowered, a channel output assumes the logic
state based on the selected default option. Default= High for IISO7840 and
Low for ISO7840F.
When VCCI transitions from unpowered to powered-up, a channel output
assumes the logic state of its input.
When VCCI transitions from powered-up to unpowered, channel output
assumes the selected default state.
When VCCO is unpowered, a channel output is undetermined (3).
When VCCO transitions from unpowered to powered-up, a channel output
assumes the logic state of its input
VCCI = Input-side VCC; VCCO = Output-side VCC; PU = Powered up (VCC ≥ 2.25 V); PD = Powered down (VCC ≤ 1.7 V); X = Irrelevant; H
= High level; L = Low level ; Z = High Impedance
A strongly driven input signal can weakly power the floating VCC through an internal protection diode and cause undetermined output.
The outputs are in undetermined state when 1.7 V < VCCI, VCCO < 2.25 V.
8.4.1 Device I/O Schematics
Input (Device Without Suffix F)
VCCI
VCCI
Input (Device With Suffix F)
VCCI
VCCI
VCCI
VCCI
VCCI
1.5 MW
985 W
985 W
INx
INx
1.5 MW
Output
Enable
VCCO
VCCO
VCCO VCCO
VCCO
2 MW
1970 W
~20 W
OUTx
Enx
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Figure 17. Device I/O Schematics
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The ISO7840 device is a high-performance, quad-channel digital isolator with a 5.7-kVRMS isolation voltage. The
device comes with enable pins on each side that can be used to put the respective outputs in high impedance for
multi-master driving applications and reduce power consumption. The ISO7840 device uses single-ended
CMOS-logic switching technology. The supply voltage range is from 2.25 V to 5.5 V for both supplies, VCC1 and
VCC2. When designing with digital isolators, keep in mind that because of the single-ended design structure,
digital isolators do not conform to any specific interface standard and are only intended for isolating single-ended
CMOS or TTL digital signal lines. The isolator is typically placed between the data controller (that is, μC or
UART), and a data converter or a line transceiver, regardless of the interface type or standard.
9.2 Typical Application
5 VISO
Isolation
Barrier
5 VISO
5 VISO
0.1 F
22
AVDD
11
RTD
12
16
1
0.1 F
DVDD
AIN1+
A0
AIN1±
A1
SCLK
Bridge
18
17
AIN2+
DOUT
ADS1234
AIN2±
REF+
13
Thermo
couple
14
16
Current
shunt
15
AIN3+
AIN3±
REF±
GAIN0
GAIN1
AIN4+
AIN4±
SPEED
PWDN
14
7
13
27
12
28
11
9, 15
5 VISO
VCC2
VCC1
EN2
EN1
INA
OUTA
OUTB
OUTC
IND
GND2
0.1 F
1
7
0.1 F
3
4
INB
IN 5
C
6
OUTD
2, 8
GND1
19
0.1 F
0.1 F
16
10
23
14
24
13
25
12
26
11
9, 15
VCC1
3.3 V
EN
NC
OUTA
INA
OUTB
OUTC
OUTD
GND2
1
7
DVcc
XOUT
5
12 P3.1
MSP430F2132
14
6
XIN
CLK
13
18
P3.7
SOMI
17
P3.6
15
16
P3.4
P3.5
DVss
ISO7841
VCC2
2
11 P3.0
20
AGND DGND
21
10
8
5 VISO
3.3 V
3.3 V
0.1 F
0.1 F
4
3
4
INB
IN 5
C
6
IND
2, 8
GND1
ISO7840
2
Copyright © 2016, Texas Instruments Incorporated
Figure 18. Isolated Data Acquisition System for Process Control
Copyright © 2015–2016, Texas Instruments Incorporated
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, use the parameters shown in Table 3.
Table 3. Design Parameters
PARAMETER
VALUE
Supply voltage
2.25 to 5.5 V
Decoupling capacitor between VCC1 and GND1
0.1 µF
Decoupling capacitor from VCC2 and GND2
0.1 µF
9.2.2 Detailed Design Procedure
Unlike optocouplers, which require external components to improve performance, provide bias, or limit current,
the ISO7840 device only requires two external bypass capacitors to operate.
VCC1
VCC2
0.1 µF
0.1 µF
VCC1
1
GND1
2
GND2
INA
INA
3
14 OUTA
OUTB
INB
INB
4
13 OUTB
OUTC
INC
INC
5
12 OUTC
OUTC
IND
IND
6
11 OUTD
OUTD
NC
7
10
EN2
GND1
8
9
GND2
GND1
GND1
16
VCC2
GND2
EN
GND2
ISO7840
Copyright © 2016, Texas Instruments Incorporated
Figure 19. Typical ISO7840 Circuit Hook-Up
9.2.3 Application Curve
The typical eye diagram of the ISO7840 device indicates low jitter and wide open eye at the maximum data rate
of 100 Mbps.
Figure 20. Eye Diagram at 100 Mbps PRBS, 5 V and 25°C
22
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ISO7840, ISO7840F
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SLLSEN2B – JULY 2015 – REVISED APRIL 2016
10 Power Supply Recommendations
To help ensure reliable operation at data rates and supply voltages, a 0.1-μF bypass capacitor is recommended
at input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins as
possible. If only a single primary-side power supply is available in an application, isolated power can be
generated for the secondary-side with the help of a transformer driver such as Texas InstrumentsSN6501. For
such applications, detailed power supply design and transformer selection recommendations are available in
SN6501 Transformer Driver for Isolated Power Supplies.
Copyright © 2015–2016, Texas Instruments Incorporated
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11 Layout
11.1 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 21). Layer stacking should
be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency
signal layer.
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/inch2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power or ground plane system to
the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the
power and ground plane of each power system can be placed closer together, thus increasing the high-frequency
bypass capacitance significantly.
For detailed layout recommendations, refer to Digital Isolator Design Guide.
11.1.1 PCB Material
For digital circuit boards operating at less than 150 Mbps, (or rise and fall times greater than 1 ns), and trace
lengths of up to 10 inches, use standard FR-4 UL94V-0 printed circuit board. This PCB is preferred over cheaper
alternatives because of lower dielectric losses at high frequencies, less moisture absorption, greater strength and
stiffness, and the self-extinguishing flammability-characteristics.
11.2 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 21. Layout Example Schematic
24
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SLLSEN2B – JULY 2015 – REVISED APRIL 2016
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• ADS1234 24-Bit Analog-to-Digital Converter For Bridge Sensors
• Digital Isolator Design Guide
• Isolation Glossary
• MSP430G2x32, MSP430G2x02 Mixed Signal Microcontroller
• SN6501 Transformer Driver for Isolated Power Supplies
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 4. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
ISO7840
Click here
Click here
Click here
Click here
Click here
ISO7840F
Click here
Click here
Click here
Click here
Click here
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Copyright © 2015–2016, Texas Instruments Incorporated
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
26
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ISO7840, ISO7840F
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SLLSEN2B – JULY 2015 – REVISED APRIL 2016
PACKAGE OUTLINE
DW0016B
SOIC - 2.65 mm max height
SCALE 1.500
SOIC
C
10.63
TYP
9.97
SEATING PLANE
PIN 1 ID
AREA
A
0.1 C
14X 1.27
16
1
2X
8.89
10.5
10.1
NOTE 3
8
9
0.51
0.31
0.25
C A
16X
B
7.6
7.4
NOTE 4
2.65 MAX
B
0.33
TYP
0.10
SEE DETAIL A
0.25
GAGE PLANE
0.3
0.1
0 -8
1.27
0.40
DETAIL A
(1.4)
TYPICAL
4221009/B 07/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.
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EXAMPLE BOARD LAYOUT
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (2)
16X (1.65)
SEE
DETAILS
1
SEE
DETAILS
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
9
8
9
8
R0.05 TYP
R0.05 TYP
(9.75)
(9.3)
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
LAND PATTERN EXAMPLE
SCALE:4X
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221009/B 07/2016
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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SLLSEN2B – JULY 2015 – REVISED APRIL 2016
EXAMPLE STENCIL DESIGN
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (1.65)
16X (2)
1
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
9
8
9
8
R0.05 TYP
R0.05 TYP
(9.3)
(9.75)
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221009/B 07/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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www.ti.com
PACKAGE OUTLINE
DWW0016A
SOIC - 2.65 mm max height
SCALE 1.000
PLASTIC SMALL OUTLINE
C
17.4
17.1
A
SEATING PLANE
0.1 C
PIN 1 ID AREA
14X 1.27
16
1
10.4
10.2
NOTE 3
2X
8.89
8
9
16X
14.1
13.9
NOTE 4
B
0.25
0.51
0.31
A B
(2.286)
C
2.65 MAX
0.28
TYP
0.22
SEE DETAIL A
(1.625)
0.25
GAGE PLANE
0.3
0.1
1.1
0.6
0 -8
DETAIL A
TYPICAL
4221501/A 11/2014
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0,15 mm per side.
4. This dimension does not include interlead flash.
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Product Folder Links: ISO7840 ISO7840F
ISO7840, ISO7840F
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SLLSEN2B – JULY 2015 – REVISED APRIL 2016
EXAMPLE BOARD LAYOUT
DWW0016A
SOIC - 2.65 mm max height
PLASTIC SMALL OUTLINE
16X (2)
16X (1.875)
(14.25)
(14.5)
16X (0.6)
16X (0.6)
1
1
16
16
SYMM
SYMM
14X
(1.27)
9
8
SYMM
14X
(1.27)
9
8
SYMM
(16.375)
(16.25)
LAND PATTERN EXAMPLE
LAND PATTERN EXAMPLE
STANDARD
SCALE:3X
PCB CLEARANCE & CREEPAGE OPTIMIZED
SCALE:3X
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221501/A 11/2014
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
Copyright © 2015–2016, Texas Instruments Incorporated
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www.ti.com
EXAMPLE STENCIL DESIGN
DWW0016A
SOIC - 2.65 mm max height
PLASTIC SMALL OUTLINE
16X (2)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
9
8
(16.25)
SOLDER PASTE EXAMPLE
STANDARD
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
16X (1.875)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
9
8
(16.375)
SOLDER PASTE EXAMPLE
PCB CLEARANCE & CREEPAGE OPTIMIZED
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221501/A 11/2014
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
www.ti.com
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PACKAGE OPTION ADDENDUM
www.ti.com
14-Dec-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
ISO7840DW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840
ISO7840DWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840
ISO7840DWW
ACTIVE
SOIC
DWW
16
45
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840
ISO7840DWWR
ACTIVE
SOIC
DWW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840
ISO7840FDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840F
ISO7840FDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840F
ISO7840FDWW
ACTIVE
SOIC
DWW
16
45
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840F
ISO7840FDWWR
ACTIVE
SOIC
DWW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7840F
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
14-Dec-2016
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
10.75
10.7
2.7
12.0
16.0
Q1
ISO7840DWR
SOIC
DW
16
2000
330.0
16.4
ISO7840DWWR
SOIC
DWW
16
1000
330.0
24.4
18.0
10.0
3.0
20.0
24.0
Q1
ISO7840FDWR
SOIC
DW
16
2000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
ISO7840FDWWR
SOIC
DWW
16
1000
330.0
24.4
18.0
10.0
3.0
20.0
24.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO7840DWR
SOIC
DW
16
2000
350.0
350.0
43.0
ISO7840DWWR
SOIC
DWW
16
1000
350.0
350.0
43.0
ISO7840FDWR
SOIC
DW
16
2000
350.0
350.0
43.0
ISO7840FDWWR
SOIC
DWW
16
1000
350.0
350.0
43.0
Pack Materials-Page 2
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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