Texas Instruments | ISO7820x High-Performance, 8000 VPK Reinforced Dual Channel Digital Isolator (Rev. A) | Datasheet | Texas Instruments ISO7820x High-Performance, 8000 VPK Reinforced Dual Channel Digital Isolator (Rev. A) Datasheet

Texas Instruments ISO7820x High-Performance, 8000 VPK Reinforced Dual Channel Digital Isolator (Rev. A) Datasheet
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ISO7820, ISO7820F
SLLSEP0A – JULY 2015 – REVISED MARCH 2016
ISO7820x High-Performance, 8000 VPK Reinforced Dual Channel Digital Isolator
1 Features
3 Description
•
•
•
•
•
The ISO7820 is a high-performance, dual-channel
digital isolator with 8000 VPK isolation voltage. This
device has reinforced isolation certifications
according to VDE, CSA, CQC, and TUV. The isolator
provides high electromagnetic immunity and low
emissions at low power consumption, while isolating
CMOS or LVCMOS digital I/O’s. Each isolation
channel has a logic input and output buffer separated
by silicon dioxide (SiO2) insulation barrier. ISO7820
has two forward channels and no reverse-direction
channel. If the input power or signal is lost, default
output is 'high' for the ISO7820 and 'low' for the
ISO7820F device. Used in conjunction with isolated
power supplies, this device prevents noise currents
on a data bus or other circuits from entering the local
ground and interfering with or damaging sensitive
circuitry. Through innovative chip design and layout
techniques, electromagnetic compatibility of ISO7820
has been significantly enhanced to ease system-level
ESD, EFT, Surge and Emissions compliance.
ISO7820 is available in 16-pin SOIC wide-body (DW)
and extra-wide body (DWW) packages. The DWW
package option comes with enable pins which can be
used to put the respective outputs in high impedance
for multi-master driving applications and to reduce
power consumption.
1
•
•
•
•
•
•
•
•
Signaling Rate: Up to 100 Mbps
Wide Supply Range: 2.25 V to 5.5 V
2.25 V to 5.5 V Level Translation
Wide Temperature Range: –55°C to 125°C
Low Power Consumption, Typical 1.7 mA per
Channel at 1 Mbps
Low Propagation Delay: 11 ns Typical
(5 V Supplies)
Industry leading CMTI(Min): ±100 kV/μs
Robust Electromagnetic Compatibility (EMC)
System-Level ESD, EFT, and Surge Immunity
Low Emissions
Isolation Barrier Life: > 25 Years
SOIC-16 Wide Body (DW) and Extra-Wide Body
(DWW) Package Options
Safety and Regulatory Approvals:
– 8000 VPK Reinforced Isolation per DIN V VDE
V 0884-10 (VDE V 0884-10):2006-12
– 5.7 kVRMS Isolation for 1 minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950-1 and IEC 60601-1 End Equipment
Standards
– CQC Certification per GB4943.1-2011
– TUV Certification per EN 61010-1 and EN
60950-1
– All DW Package Certifications Complete;
DWW Package Certifications Complete per
UL, TUV and Planned for VDE, CSA, and
CQC
Device Information(1)
PART NUMBER
ISO7820,
ISO7820F
Industrial Automation
Motor Control
Power Supplies
Solar Inverters
Medical Equipment
Hybrid Electric Vehicles
BODY SIZE (NOM)
10.30 mm x 7.50 mm
Extra wide SOIC,
10.30 mm × 14.0 mm
DWW (16)
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
spacer
2 Applications
•
•
•
•
•
•
PACKAGE
SOIC, DW (16)
Simplified Schematic
VCCI
Isolation
Capacitor
VCCO
INx
OUTx
ENx (DWW package only)
GNDI
GNDO
(1)
VCCI and GNDI are supply and ground
connections respectively for the input
channels.
(2)
VCCO and GNDO are supply and ground
connections respectively for the output
channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7820, ISO7820F
SLLSEP0A – JULY 2015 – REVISED MARCH 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
7
8
1
1
1
2
4
5
Absolute Maximum Ratings ..................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Power Dissipation Characteristics ............................ 6
Electrical Characteristics, 5 V ................................... 7
Electrical Characteristics, 3.3 V ................................ 7
Electrical Characteristics, 2.5 V ................................ 8
Switching Characteristics, 5 V .................................. 9
Switching Characteristics, 3.3 V ............................. 9
Switching Characteristics, 2.5 V ........................... 10
Typical Characteristics .......................................... 11
Parameter Measurement Information ................ 12
Detailed Description ............................................ 14
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
14
14
15
19
Applications and Implementation ...................... 21
9.1 Application Information............................................ 21
9.2 Typical Application .................................................. 21
10 Power Supply Recommendations ..................... 23
11 Layout................................................................... 24
11.1 PCB Material ......................................................... 24
11.2 Layout Guidelines ................................................. 24
11.3 Layout Example .................................................... 24
12 Device and Documentation Support ................. 25
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (July 2015) to Revision A
Page
•
Changed the Safety and Regulatory Approvals list of Features ........................................................................................... 1
•
Changed Features From: 8000 VPK VIOTM and 2121 VPK VIORM Reinforced..To: 8000 VPK Reinforced.................................. 1
•
Added Features "TUV Certification per EN 61010-1 and EN 60950-1" ................................................................................ 1
•
Added package: Extra wide SOIC, DWW (16) to the Device Information table .................................................................... 1
•
Changed text in the first paragraph of the Description From: "certifications according to VDE, CSA, and CQC". To:
"certifications according to VDE, CSA, CQC, and TUV." ...................................................................................................... 1
•
Changed the Simplified Schematic ........................................................................................................................................ 1
•
Added the DWW pinout image .............................................................................................................................................. 4
•
Added the DWW package to the Thermal Information .......................................................................................................... 6
•
Changed the Supply Current section of the Electrical Characteristics, 5 V to include the DWW package information ........ 7
•
Deleted Note 1 From the Electrical Characteristics, 5 V ....................................................................................................... 7
•
Changed the Supply Current section of the Electrical Characteristics, 3.3 V to include the DWW package
information ............................................................................................................................................................................. 7
•
Deleted Note 1 From the Electrical Characteristics, 3.3 V .................................................................................................... 8
•
Changed the Supply Current section of the Electrical Characteristics, 2.5 V to include the DWW package
information ............................................................................................................................................................................. 8
•
Deleted Note 1 From the Electrical Characteristics, 2.5 V .................................................................................................... 9
•
Added "Channel-to-channel output skew time" to Switching Characteristics, 5 V ................................................................. 9
•
Added "Channel-to-channel output skew time" to Switching Characteristics, 3.3 V .............................................................. 9
•
Added "Channel-to-channel output skew time" to Switching Characteristics, 2.5 V ............................................................ 10
•
Added Note: "This coupler..." to the High Voltage Feature Description section ................................................................. 15
•
Changed the Table 1, added DWW package information .................................................................................................... 15
•
Added Note 1 to Table 2 ..................................................................................................................................................... 16
2
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ISO7820, ISO7820F
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Revision History (continued)
•
Added "Climatic category" to Table 2 and deleted Note 1 .................................................................................................. 16
•
Changed the CSA column in Table 4 ................................................................................................................................... 17
•
Added TUV to the Regulatory Information section and Table 4. Deleted Note 1 in Table 4 .............................................. 17
•
Changed Table 6 ................................................................................................................................................................. 19
•
Changed Figure 15 .............................................................................................................................................................. 20
•
Changed the Typical Application text and Figure 16............................................................................................................ 21
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Product Folder Links: ISO7820 ISO7820F
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5 Pin Configuration and Functions
DW Package
16-Pin (SOIC)
Top View
NC
16
2
INA
15
3
ISOLATION
VCC1
4
INB
5
NC
13
OUTA
10
8
9
VCC1
1
16
VCC2
GND1
2
15
GND2
NC
3
14
NC
NC
4
13
EN2
INA
5
12
OUTA
INB
6
11 OUTB
NC
7
10
GND1
8
9
NC
VCC2
11
7
GND2
14
12
6
GND1
NC
1
ISOLATION
GND1
DWW Package
16-Pin (SOIC)
Top View
OUTB
NC
NC
NC
GND2
GND2
Pin Functions
PIN
NAME
NO.
NO.
DW
DWW
I/O
DESCRIPTION
GND1
1, 7
2, 8
–
Ground connection for VCC1
GND2
9, 16
9, 15
–
Ground connection for VCC2
INA
4
5
I
Input, channel A
INB
5
6
I
Input, channel B
NC
2, 6, 8, 10 ,11,
15
4, 7, 10
–
Not connected
OUTA
13
12
O
Output, channel A
OUTB
12
11
O
Output, channel B
VCC1
3
1
–
Power supply, VCC1
VCC2
14
16
–
Power supply, VCC2
EN2
–
13
I
Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and
in high-impedance state when EN2 is low.
4
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6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN
MAX
Supply voltage (2)
VCC1, VCC2
–0.5
6
Voltage
INx, OUTx
–0.5
VCC + 0.5 (3)
Output Current
IO
-15
15
mA
12.8
kV
150
°C
Surge Immunity
Storage temperature, Tstg
(1)
(2)
(3)
–65
UNIT
V
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VESD
(1)
(2)
Electrostatic discharge
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (1)
±6000
V
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins (2)
±1500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
VCC1, VCC2
Supply voltage
VCCO
IOH
IOL
TYP
2.25
High-level output current
Low-level output current
(1)
=5V
-4
VCCO = 3.3 V
-2
VCCO = 2.5 V
-1
MAX
UNIT
5.5
V
mA
VCCO = 5 V
4
VCCO = 3.3 V
2
VCCO = 2.5 V
1
mA
VIH
High-level input voltage
0.7 x VCCI (1)
VCCI
VIL
Low-level input voltage
0
0.3 x VCCI
DR
Signaling rate
0
100
Mbps
TJ
Junction temperature (2)
-55
150
°C
TA
Ambient temperature
-55
125
°C
(1)
(2)
25
V
V
VCCI = Input-side VCC; VCCO = Output-side VCC.
To maintain the recommended operating conditions for TJ, see the Thermal Information table.
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6.4 Thermal Information
ISO7820
THERMAL METRIC
DW (SOIC)
DWW (SOIC)
16 PINS
16-PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
84.7
84.7
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
47.3
46.0
°C/W
RθJB
Junction-to-board thermal resistance
49.4
54.5
°C/W
ψJT
Junction-to-top characterization parameter
19.1
18.5
°C/W
ψJB
Junction-to-board characterization parameter
48.8
53.8
°C/W
RθJC(bottom)
Junction-to-case(bottom) thermal resistance
n/a
n/a
°C/W
6.5 Power Dissipation Characteristics
VALUE
PD
Maximum power dissipation by ISO7820x
PD1
Maximum power dissipation by side-1 of
ISO7820x
PD2
Maximum power dissipation by side-2 of
ISO7820x
6
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UNIT
100
VCC1 = VCC2 = 5.5 V, TJ = 150°C,
CL = 15 pF, input a 50 MHz 50% duty cycle
square wave
20
mW
80
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6.6 Electrical Characteristics, 5 V
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCC2 – 0.4
VCC2 – 0.2
VOH
High-level output voltage
IOH = –4 mA; see Figure 7
VOL
Low-level output voltage
IOL = 4 mA; see Figure 7
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
VIH = VCC1 at INx
IIL
Low-level input current
VIL = 0 V at INx
-10
CMTI
Common-mode transient
immunity
VI = VCC1 or 0 V; see Figure 10
100
Supply current, Disable
(ISO7820DWW and
ISO7820FDWW only)
EN2 = 0V, VI = 0 V (ISO7820FDWW) , VI = VCC1
(ISO7820DWW)
Supply current, Disable
(ISO7820DWW and
ISO7820FDWW only)
EN2 = 0V, VI = VCC1 (ISO7820FDWW) , VI = 0 V
(ISO7820DWW)
Supply current, DC Signal
VI = 0 V (ISO7820F) , VI = VCC1(ISO7820)
Supply current, DC Signal
VI = VCC1 (ISO7820F) , VI = 0 V (ISO7820)
Supply current
1 Mbps
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
0.2
MAX
V
0.4
0.1 x VCC2
Supply current
10 Mbps
Supply current
100 Mbps
V
V
10
AC Signal: All channels
switching with square wave
clock input;
CL = 15 pF
UNIT
μA
kV/μs
0.8
1.3
0.2
0.4
3.2
4.6
0.2
0.4
0.9
1.3
1.2
1.8
3.2
4.6
1.3
2
2.1
3
1.3
2
2.1
3
2.3
3.8
2.7
3.3
11.9
15.3
MIN
TYP
MAX
VCC2 – 0.4
VCC2 – 0.2
mA
mA
mA
mA
mA
mA
mA
6.7 Electrical Characteristics, 3.3 V
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
VOH
High-level output voltage
IOH = –2 mA; see Figure 7
VOL
Low-level output voltage
IOL = 2 mA; see Figure 7
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
VIH = VCC1 at INx
IIL
Low-level input current
VIL = 0 V at INx
-10
CMTI
Common-mode transient
immunity
VI = VCC1 or 0 V; see Figure 10
100
Supply current, Disable
(ISO7820DWW and
ISO7820FDWW only)
EN2 = 0V, VI = 0 V (ISO7820FDWW) , VI = VCC1(ISO7820DWW)
Supply current, Disable
(ISO7820DWW and
ISO7820FDWW only)
EN2 = 0V, VI = VCC1 (ISO7820FDWW) , VI = 0 V(ISO7820DWW)
Supply current, DC Signal
VI = 0 V (ISO7820F) , VI = VCC1(ISO7820)
Supply current, DC Signal
VI = VCC1 (ISO7820F) , VI = 0 V (ISO7820)
Supply current
1 Mbps
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
0.2
V
0.4
0.1 x VCC2
Supply current
10 Mbps
Supply current
100 Mbps
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V
V
10
AC Signal: All channels
switching with square wave
clock input;
CL = 15 pF
UNIT
μA
kV/μs
0.8
1.3
0.2
0.4
3.2
4.6
0.2
0.4
0.9
1.3
1.2
1.8
3.2
4.6
1.3
2
2.1
3
1.3
2
2.1
3
2.3
3.8
2.5
3.2
8.9
11.5
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mA
mA
mA
mA
mA
mA
mA
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6.8 Electrical Characteristics, 2.5 V
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCC2 – 0.4
VCC2 – 0.2
VOH
High-level output voltage
IOH = –1 mA; see Figure 7
VOL
Low-level output voltage
IOL = 1 mA; see Figure 7
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
VIH = VCC1 at INx
IIL
Low-level input current
VIL = 0 V at INx
-10
CMTI
Common-mode transient
immunity
VI = VCC1 or 0 V; see Figure 10
100
Supply current, Disable
(ISO7820DWW and
ISO7820FDWW only)
EN2 = 0V, VI = 0 V (ISO7820FDWW) , VI = VCC1(ISO7820DWW)
Supply current, Disable
(ISO7820DWW and
ISO7820FDWW only)
EN2 = 0V, VI = VCC1 (ISO7820FDWW) , VI = 0 V(ISO7820DWW)
Supply current, DC Signal
VI = 0 V (ISO7820F) , VI = VCC1(ISO7820)
Supply current, DC Signal
VI = VCC1 (ISO7820F) , VI = 0 V (ISO7820)
Supply current
1 Mbps
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
8
0.2
MAX
V
0.4
0.1 x VCC2
Supply current
10 Mbps
Supply current
100 Mbps
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V
V
10
AC Signal: All channels
switching with square wave
clock input;
CL = 15 pF
UNIT
μA
kV/μs
0.8
1.3
0.2
0.4
3.2
4.6
0.2
0.4
0.9
1.3
1.2
1.8
3.2
4.6
1.3
2
2.1
3
1.3
2
2.1
3
1.8
2.7
2.4
3.2
7
9.1
mA
mA
mA
mA
mA
mA
mA
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6.9 Switching Characteristics, 5 V
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(o)
(2)
tsk(pp)
(3)
4.6
ns
ns
tPLZ
2.4
3.9
2.4
3.9
Disable propagation delay, high-to-high impedance output for
ISO7820DWW and ISO7820FDWW
12
20
ns
Disable propagation delay, low-to-high impedance output for
ISO7820DWW and ISO7820FDWW
12
20
ns
10
20
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7820DWW
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7820FDWW
10
20
ns
0.2
9
μs
See Figure 7
Enable propagation delay, high impedance-to-high output for
ISO7820DWW
ns
See Figure 8
Enable propagation delay, high impedance-to-high output for
ISO7820FDWW
Measured from the time VCC
goes below 1.7 V. See Figure 9
Default output delay time from input power loss
tie
0.6
UNIT
ns
tPHZ
tfs
16
4.5
Output signal fall time
tPZL
MAX
10.7
2.5
tf
tPZH
TYP
6
Part-to-part skew time
Output signal rise time
(3)
See Figure 7
MIN
Channel-to-channel output skew time
tr
(1)
(2)
TEST CONDITIONS
16
Time interval error
2
1
- 1 PRBS data at 100 Mbps
ns
Also known as Pulse Skew.
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
6.10 Switching Characteristics, 3.3 V
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(o)
(2)
tsk(pp)
(3)
tPHZ
tPLZ
(1)
(2)
(3)
16
0.7
4.7
4.5
Output signal fall time
tie
MAX
10.8
2.2
Output signal rise time
tfs
TYP
6
Part-to-part skew time
tf
tPZL
See Figure 7
MIN
Channel-to-channel output skew time
tr
tPZH
TEST CONDITIONS
UNIT
ns
ns
1.3
3
1.3
3
Disable propagation delay, high-to-high impedance output for
ISO7820DWW and ISO7820FDWW
17
32
ns
Disable propagation delay, low-to-high impedance output for
ISO7820DWW and ISO7820FDWW
17
32
ns
17
32
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7820DWW
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7820FDWW
17
32
ns
0.2
9
μs
See Figure 7
Enable propagation delay, high impedance-to-high output for
ISO7820DWW
Enable propagation delay, high impedance-to-high output for
ISO7820FDWW
Default output delay time from input power loss
See Figure 8
Measured from the time VCC goes
below 1.7 V. See Figure 9
16
Time interval error
ns
2
- 1 PRBS data at 100 Mbps
1
ns
Also known as Pulse Skew.
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.11 Switching Characteristics, 2.5 V
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(o)
(2)
tsk(pp)
(3)
tPHZ
tPLZ
(1)
(2)
(3)
10
17.5
0.7
4.7
4.5
Output signal fall time
tie
MAX
11.7
2.2
Output signal rise time
tfs
TYP
7.5
Part-to-part skew time
tf
tPZL
See Figure 7
MIN
Channel-to-channel output skew time
tr
tPZH
TEST CONDITIONS
UNIT
ns
ns
1.8
3.5
1.8
3.5
Disable propagation delay, high-to-high impedance output for
ISO7820DWW and ISO7820FDWW
22
45
ns
Disable propagation delay, low-to-high impedance output for
ISO7820DWW and ISO7820FDWW
22
45
ns
18
45
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7820DWW
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7820FDWW
18
45
ns
0.2
9
μs
See Figure 7
Enable propagation delay, high impedance-to-high output for
ISO7820DWW
Enable propagation delay, high impedance-to-high output for
ISO7820FDWW
Default output delay time from input power loss
Time interval error
ns
See Figure 8
Measured from the time VCC goes
below 1.7 V. See Figure 9
16
2
- 1 PRBS data at 100 Mbps
1
ns
Also known as Pulse Skew.
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.12 Typical Characteristics
24
10
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
16
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
8
Supply Current (mA)
Supply Current (mA)
20
12
8
6
4
2
4
0
0
0
25
50
TA = 25°C
75
100
Data Rate (Mbps)
125
150
0
CL = 15 pF
75
100
Data Rate (Mbps)
125
150
D002
CL = No Load
Figure 2. Supply Current vs Data Rate (with No Load)
6
1.0
VCC at 2.5V
VCC at 3.3V
VCC at 5.0V
0.9
5
Low-Level Output Voltage (V)
High-Level Output Voltage (V)
50
TA = 25°C
Figure 1. Supply Current vs Data Rate (with 15 pF Load)
4
3
2
VCC at 2.5V
VCC at 3.3V
VCC at 5.0V
1
0
-15
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-10
-5
High-Level Output Current (mA)
0
0
15
VCC1 Rising
VCC1 Falling
VCC2 Rising
VCC2 Falling
14
Propagation Delay Time (ns)
2.10
D001
Figure 4. Low-Level Output Voltage vs Low-Level Output
Current
2.25
2.15
15
TA = 25°C
Figure 3. High-Level Output Voltage vs High-level Output
Current
2.20
5
10
Low-Level Output Current (mA)
D001
TA = 25°C
Power Supply Under Voltage Threshold (V)
25
D001
2.05
2.00
1.95
1.90
1.85
1.80
13
12
11
10
9
7
1.75
6
1.70
-50
5
-60
0
50
100
Free-Air Temperature (oC )
150
tPLH at 2.5 V
tPHL at 2.5 V
tPHL at 3.3 V
tPLH at 3.3 V
tPLH at 5 V
tPHL at 5 V
8
-30
D001
Figure 5. Power Supply Undervoltage Threshold vs Free-Air
Temperature
0
30
60
Free-Air Temperature (oC )
90
120
D006
Figure 6. Propagation Delay Time vs Free-Air Temperature
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7 Parameter Measurement Information
Isolation Barrier
IN
Input
Generator
(See Note A)
VI
VCCI
50
VI
OUT
50%
50%
0V
tPLH
tPHL
CL
See Note B
VO
VOH
90%
50%
VO
50%
10%
VOL
tf
tr
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3ns, ZO = 50 Ω. At the input, 50 Ω resistor is required to terminate Input Generator signal. It is not needed in
actual application.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 7. Switching Characteristics Test Circuit and Voltage Waveforms
VCCO
VCC
Isolation Barrier
IN
Input
Generator
(See Note A)
VI
Input
Generator
(See Note A)
VO
tPZL
0V
tPLZ
VOH
EN
0.5 V
VO
50%
VOL
50
OUT
VCC
VO
VCC / 2
VCC / 2
VI
0V
tPZH
EN
CL
See Note B
VI
VCC / 2
VCC / 2
VI
CL
See Note B
IN
3V
±1%
OUT
Isolation Barrier
0V
RL = 1 k
RL = 1 k
±1%
VOH
50%
VO
0.5 V
tPHZ
50
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 10 kHz, 50% duty cycle,
tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
0V
Figure 8. Enable/Disable Propagation Delay Time Test Circuit and Waveform
12
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Parameter Measurement Information (continued)
VI
VCC
VCC
Isolation Barrier
IN = 0 V (Devices without suffix F)
IN = VCC (Devices with suffix F)
IN
2.7 V
VI
OUT
0V
t fs
VO
fs high
VO
CL
50%
fs low V
OL
See Note A
A.
VOH
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 9. Default Output Delay Time Test Circuit and Voltage Waveforms
VCCI
VCCO
S1
Isolation Barrier
C = 0.1 µF ±1%
IN
C = 0.1 µF ±1%
Pass-fail criteria:
The output must
remain stable.
OUT
+
EN
CL
See Note A
GNDI
A.
+
VCM ±
VOH or VOL
±
GNDO
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 10. Common-Mode Transient Immunity Test Circuit
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8 Detailed Description
8.1 Overview
ISO7820 employs an ON-OFF Keying (OOK) modulation scheme to transmit the digital data across a silicon
dioxide based isolation barrier. The transmitter sends a high frequency carrier across the barrier to represent one
digital state and sends no signal to represent the other digital state. The receiver demodulates the signal after
advanced signal conditioning and produces the output through a buffer stage. These devices also incorporates
advanced circuit techniques to maximize the CMTI performance and minimize the radiated emissions due the
high frequency carrier and IO buffer switching. The conceptual block diagram of a digital capacitive isolator,
Figure 11, shows a functional block diagram of a typical channel.
8.2 Functional Block Diagram
Transmitter
Receiver
EN
TX IN
OOK
Modulation
TX Signal
Conditioning
Oscillator
SiO2 based
Capacitive
Isolation
Barrier
RX Signal
Conditioning
Envelope
Detection
RX OUT
Emissions
Reduction
Techniques
Figure 11. Conceptual Block Diagram of a Digital Capacitive Isolator
Also a conceptual detail of how the ON/OFF Keying scheme works is shown in Figure 12.
TX IN
Carrier signal through
isolation barrier
RX OUT
Figure 12. On-Off Keying (OOK) Based Modulation Scheme
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8.3 Feature Description
ISO7820 is available in two channel configurations and default output state options to enable a variety of
application uses.
PRODUCT
CHANNEL DIRECTION
MAX DATA RATE
DEFAULT OUTPUT
ISO7820
2 Forward, 0 Reverse
5700 VRMS / 8000 VPK
(1)
100 Mbps
High
ISO7820F
2 Forward, 0 Reverse
5700 VRMS / 8000 VPK
(1)
100 Mbps
Low
(1)
RATED ISOLATION
See the Regulatory Information section for detailed isolation ratings.
8.3.1 High Voltage Feature Description
NOTE
This coupler is suitable for 'safe electrical insulation' only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective
circuits.
Table 1. Package Insulation and Safety-Related Specifications
(over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
CLR
External clearance
Shortest terminal-to-terminal distance
through air
DW-16
CPG
External creepage
Shortest terminal-to-terminal distance
across the package surface
DW-16
CTI
Comparative tracking index
DIN EN 60112 (VDE 0303-11); IEC 60112; UL 746A
TYP MAX
8
DWW-16
mm
14.5
8
DWW-16
UNIT
mm
14.5
600
V
12
Ω
VIO = 500 V, TA = 25°C
10
VIO = 500 V, 100°C ≤ TA ≤ max
1011
RIO
Isolation resistance, input to output (1)
CIO
Barrier capacitance, input to output (1) VIO = 0.4 x sin (2πft), f = 1 MHz
1
pF
CI
Input capacitance (2)
2
pF
(1)
(2)
VI = VCC/2 + 0.4 x sin (2πft), f = 1 MHz, VCC = 5 V
Ω
All pins on each side of the barrier tied together creating a two-terminal device.
Measured from input pin to ground.
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed-circuit board do not reduce this distance.
Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to
help increase these specifications.
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Table 2. Insulation Characteristics
PARAMETER
TEST CONDITIONS
SPECIFICATION
DW
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
VIOWM Maximum working isolation voltage Time dependent dielectric breakdown (TDDB) test
UNIT
DWW
21
21
μm
1500
2000
VRMS
2121
2828
VDC
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIOTM
Maximum transient isolation
voltage
VTEST = VIOTM
t = 60 sec (qualification)
t= 1 sec (100% production)
8000
8000
VPK
VIOSM
Maximum surge isolation voltage
Test method per IEC 60065, 1.2/50 µs waveform,
VTEST = 1.6 x VIOSM = 12800 VPK (1) (qualification)
8000
8000
VPK
VIORM
Maximum repetitive peak isolation
voltage
2121
2828
VPK
Method a, After Input/Output safety test subgroup 2/3,
VPR = VIORM x 1.2, t = 10 s,
Partial discharge < 5 pC
2545
3394
Method a, After environmental tests subgroup 1,
VPR = VIORM x 1.6, t = 10 s,
Partial Discharge < 5 pC
3394
4525
Method b1,After environmental tests subgroup 1,
VPR = VIORM x 1.875, t = 1 s (100% Production test)
Partial discharge < 5 pC
3977
5303
VIO = 500 V at TS
>109
>109
Pollution degree
2
2
Climatic category
55/125/21
55/125/21
5700
5700
VPR
Input-to-output test voltage
RS
Isolation resistance
VPK
Ω
UL 1577
VISO
(1)
Withstanding isolation voltage
VTEST = VISO = 5700 VRMS, t = 60 sec (qualification);
VTEST = 1.2 x VISO = 6840 VRMS , t = 1 sec (100%
production)
VRMS
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Table 3. IEC 60664-1 Ratings Table
PARAMETER
TEST CONDITIONS
Material group
Overvoltage category /
Installation classification
I
DW package
DWW package
16
SPECIFICATION
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Rated mains voltage ≤ 600 VRMS
I–IV
Rated mains voltage ≤ 1000 VRMS
I–III
Rated mains voltage ≤ 1000 VRMS
I–IV
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8.3.1.1 Regulatory Information
DW package certifications are complete; DWW package certifications completed for UL and TUV and planned for
VDE, CSA, and CQC.
Table 4. Regulatory Information
VDE
Certified according to
DIN V VDE V 0884-10
(VDE V 0884-10):200612 and DIN EN 60950-1
(VDE 0805 Teil 1):201101
CSA
UL
Approved under CSA
Component Acceptance
Notice 5A, IEC 60950-1
and IEC 60601-1
Recognized under UL
1577 Component
Recognition Program
Reinforced insulation per
CSA 60950-1-07+A1+A2
and IEC 60950-1 2nd Ed.,
Reinforced insulation
800 VRMS (DW package)
Maximum transient
and 1450 VRMS (DWW
isolation voltage, 8000
package) max working
VPK;
voltage (pollution degree
Maximum repetitive peak 2, material group I);
isolation voltage, 2121
2 MOPP (Means of
VPK (DW), 2828 VPK
Patient Protection) per
(DWW);
Maximum surge isolation CSA 60601-1:14 and IEC
60601-1 Ed. 3.1,
voltage, 8000 VPK
250 VRMS (354 VPK) max
working voltage (DW
package)
Single protection, 5700
VRMS
Certificate number:
40040142
File number: E181974
Master contract number:
220991
CQC
TUV
Certified according to
GB 4943.1-2011
Reinforced Insulation,
Altitude ≤ 5000 m,
Tropical Climate, 250
VRMS maximum
working voltage
Certificate number:
CQC15001121716
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Certified according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/
A1:2010/A12:2011/A2:2013
5700 VRMS Reinforced insulation
per EN 61010-1:2010 (3rd Ed)
up to working voltage of 600
VRMS (DW package) and 1000
VRMS (DWW package)
5700 VRMS Reinforced insulation
per EN 60950-1:2006/A11:2009/
A1:2010/A12:2011/A2:2013 up
to working voltage of 800 VRMS
(DW package) and 1450 VRMS
(DWW package)
Client ID number: 77311
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8.3.1.2 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier potentially leading to secondary system failures.
Table 5. Safety Limiting
PARAMETER
TEST CONDITIONS
Safety input, output, or supply
current for DW-16 package
and DWW-16 Packages
IS
PS
Safety input, output, or total
power
TS
Maximum safety temperature
MIN
TYP
MAX
RθJA = 84.7°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C
268
RθJA = 84.7°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C
410
RθJA = 84.7°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C
537
RθJA = 84.7°C/W, TJ = 150°C, TA = 25°C
1476
150
UNIT
mA
mW
°C
The maximum safety temperature is the maximum junction temperature specified for the device. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware
determines the junction temperature. The assumed junction-to-air thermal resistance in the is that of a device
installed on a High-K test board for Leaded Surface Mount Packages. The power is the recommended
maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
1600
Power
VCC1 = VCC2 = 2.75 V
VCC1 = VCC2 = 3.6 V
VCC1 = VCC2 = 5.5 V
500
1400
Safety Limiting Power (mW)
Safety Limiting Current (mA)
600
400
300
200
100
1000
800
600
400
200
0
0
0
50
100
150
Ambient Temperature (qC)
200
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0
50
D014
Figure 13. Thermal Derating Curve for Safety Limiting
Current per VDE
18
1200
100
150
Ambient Temperature (qC)
200
D015
Figure 14. Thermal Derating Curve for Safety Limiting
Power per VDE
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8.4 Device Functional Modes
ISO7820 functional modes are shown in Table 6.
Table 6. ISO7820 Function Table (1)
VCCI
PU
X
(1)
(2)
(3)
VCCO
INPUT
(INx) (2)
OUTPUT ENABLE
(EN2)
(DWW Package Only)
OUTPUT
(OUTx)
H
H or open
H
L
H or open
L
Open
H or open
Default
X
L
Z
PU
PU
PD
PU
X
H or open
Default
X
PD
X
X
Undetermined
COMMENTS
Normal Operation:
A channel output assumes the logic state of its input.
Default mode: When INx is open, the corresponding channel output
goes to its default high logic state. Default= High for ISO7820 and Low
for ISO7820F.
A low value of Output Enable causes the outputs to be highimpedance.
Default mode: When VCCI is unpowered, a channel output assumes
the logic state based on the selected default option.Default= High for
ISO7820 and Low for ISO7820F.
When VCCI transitions from unpowered to powered-up, a channel
output assumes the logic state of its input.
When VCCI transitions from powered-up to unpowered, channel output
assumes the selected default state.
When VCCO is unpowered, a channel output is undetermined (3).
When VCCO transitions from unpowered to powered-up, a channel
output assumes the logic state of its input
VCCI = Input-side VCC; VCCO = Output-side VCC; PU = Powered up (VCC ≥ 2.25 V); PD = Powered down (VCC ≤ 1.7 V); X = Irrelevant; H
= High level; L = Low level; Z = High impedance
A strongly driven input signal can weakly power the floating VCC via an internal protection diode and cause undetermined output.
The outputs are in undetermined state when 1.7 V < VCCI, VCCO < 2.25 V.
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8.4.1 Device I/O Schematics
Input (Device Without Suffix F)
VCCI
VCCI
Input (Device With Suffix F)
VCCI
VCCI
VCCI
VCCI
VCCI
1.5 MW
985 W
985 W
INx
INx
1.5 MW
Output
Enable
VCCO
VCCO
VCCO VCCO
VCCO
2 MW
~20 W
OUTx
1970 W
ENx
Figure 15. Device I/O Schematics
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9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The ISO7820 is a high-performance, dual-channel digital isolator with 5.7 kVRMS isolation voltage per UL 1577. It
utilizes single-ended CMOS-logic switching technology. Its supply voltage range is from 2.25 V to 5.5 V for both
supplies, VCC1 and VCC2. When designing with digital isolators, it is important to keep in mind that due to the
single-ended design structure, digital isolators do not conform to any specific interface standard and are only
intended for isolating single-ended CMOS or TTL digital signal lines. The isolator is typically placed between the
data controller (that is, μC or UART), and a data converter or a line transceiver, regardless of the interface type
or standard.
9.2 Typical Application
ISO7820F can be used to isolate power MOSFETs from sensitive logic circuitry in Switch Mode Power Supplies
(SMPS) as shown below.
MOSFET A
MOSFET B
PWM
ISO7820F
UCC27423
Figure 16. Isolated Switch Mode Power Supply
9.2.1 Design Requirements
For the ISO7820, use the parameters shown in Table 7.
Table 7. Design Parameters
PARAMETER
VALUE
Supply voltage
2.25 V to 5.5 V
Decoupling capacitor between VCC1 and GND1
0.1 µF
Decoupling capacitor from VCC2 and GND2
0.1 µF
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9.2.2 Detailed Design Procedure
Unlike optocouplers, which need external components to improve performance, provide bias, or limit current,
ISO7820 only needs two external bypass capacitors to operate.
ISO7820
VCC1
VCC2
GND1
GND1
0.1 P F
NC
NC
1
16
16
GND2
2
15
15
NC
NC
GND2
0.1 P F
GND1
GND1
3
OUTA
INA
4
INB
INB
5
NC
NC
6
GND1
GND1
NC
NC
14
14
VCC2
VCC2
13
13
INA
OUTA
OUTA
12
12
OUTB
OUTB
OUTB
11
11
NC
NC
7
10
10
NC
8
99
OISOLATION
L A T I O
INB
VVCC1
CC1
I S
INA
N
GND2
GND2
GND2
Figure 17. Typical ISO7820 Circuit Hook-up
9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO7820
incorporate many chip-level design improvements for overall system robustness. Some of these improvements
include:
• Robust ESD protection for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
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9.2.3 Application Performance Curve
Typical eye diagram of ISO7820 indicate low jitter and wide open eye at the maximum data rate of 100 Mbps.
Figure 18. Eye Diagram at 100 Mbps PRBS, 5 V and 25°C
10 Power Supply Recommendations
To ensure reliable operation at all data rates and supply voltages, a 0.1 µF bypass capacitor is recommended at
input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins as
possible. If only a single primary-side power supply is available in an application, isolated power can be
generated for the secondary-side with the help of a transformer driver such as Texas Instruments' SN6501. For
such applications, detailed power supply design and transformer selection recommendations are available in
SN6501 datasheet (SLLSEA0) .
Copyright © 2015–2016, Texas Instruments Incorporated
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11 Layout
11.1 PCB Material
For digital circuit boards operating below 150 Mbps, (or rise and fall times higher than 1 ns), and trace lengths of
up to 10 inches, use standard FR-4 epoxy-glass as PCB material. FR-4 (Flame Retardant 4) meets the
requirements of Underwriters Laboratories UL94-V0, and is preferred over cheaper alternatives due to its lower
dielectric losses at high frequencies, less moisture absorption, greater strength and stiffness, and its selfextinguishing flammability-characteristics.
11.2 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 19). Layer stacking should
be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency
signal layer.
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power / ground plane system to the
stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the
power and ground plane of each power system can be placed closer together, thus increasing the high-frequency
bypass capacitance significantly.
For detailed layout recommendations, see Application Note SLLA284, Digital Isolator Design Guide.
11.3 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 19. Layout Example
24
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ISO7820, ISO7820F
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SLLSEP0A – JULY 2015 – REVISED MARCH 2016
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
See the Isolation Glossary (SLLA353)
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 8. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
ISO7820
Click here
Click here
Click here
Click here
Click here
ISO7820F
Click here
Click here
Click here
Click here
Click here
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2015–2016, Texas Instruments Incorporated
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ISO7820, ISO7820F
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www.ti.com
PACKAGE OUTLINE
DW0016B
SOIC - 2.65 mm max height
SCALE 1.500
SOIC
C
10.63
TYP
9.97
SEATING PLANE
PIN 1 ID
AREA
A
0.1 C
14X 1.27
16
1
2X
8.89
10.5
10.1
NOTE 3
8
9
0.51
0.31
0.25
C A
16X
7.6
7.4
NOTE 4
B
2.65 MAX
B
0.38
TYP
0.25
SEE DETAIL A
0.25
GAGE PLANE
0.3
0.1
0 -8
1.27
0.40
DETAIL A
(1.4)
TYPICAL
4221009/A 08/2013
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MO-013, variation AA.
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ISO7820, ISO7820F
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SLLSEP0A – JULY 2015 – REVISED MARCH 2016
EXAMPLE BOARD LAYOUT
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (2)
16X (1.65)
SEE
DETAILS
1
SEE
DETAILS
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
9
8
9
8
(9.75)
(9.3)
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
LAND PATTERN EXAMPLE
SCALE:4X
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
0.07 MAX
ALL AROUND
METAL
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221009/A 08/2013
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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www.ti.com
EXAMPLE STENCIL DESIGN
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (1.65)
16X (2)
1
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
9
8
9
8
(9.3)
(9.75)
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221009/A 08/2013
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
28
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ISO7820, ISO7820F
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SLLSEP0A – JULY 2015 – REVISED MARCH 2016
PACKAGE OUTLINE
DWW0016A
SOIC - 2.65 mm max height
SCALE 1.000
PLASTIC SMALL OUTLINE
C
17.4
17.1
A
SEATING PLANE
0.1 C
PIN 1 ID AREA
14X 1.27
16
1
10.4
10.2
NOTE 3
2X
8.89
8
9
16X
B
14.1
13.9
NOTE 4
0.25
0.51
0.31
A B
(2.286)
C
2.65 MAX
0.28
TYP
0.22
SEE DETAIL A
(1.625)
0.25
GAGE PLANE
0 -8
0.3
0.1
1.1
0.6
DETAIL A
TYPICAL
4221501/A 11/2014
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0,15 mm per side.
4. This dimension does not include interlead flash.
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ISO7820, ISO7820F
SLLSEP0A – JULY 2015 – REVISED MARCH 2016
www.ti.com
EXAMPLE BOARD LAYOUT
DWW0016A
SOIC - 2.65 mm max height
PLASTIC SMALL OUTLINE
16X (2)
16X (1.875)
(14.25)
(14.5)
16X (0.6)
16X (0.6)
1
1
16
16
SYMM
SYMM
14X
(1.27)
9
8
SYMM
14X
(1.27)
9
8
SYMM
(16.375)
(16.25)
LAND PATTERN EXAMPLE
LAND PATTERN EXAMPLE
STANDARD
SCALE:3X
PCB CLEARANCE & CREEPAGE OPTIMIZED
SCALE:3X
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
0.07 MIN
ALL AROUND
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221501/A 11/2014
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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30
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ISO7820, ISO7820F
www.ti.com
SLLSEP0A – JULY 2015 – REVISED MARCH 2016
EXAMPLE STENCIL DESIGN
DWW0016A
SOIC - 2.65 mm max height
PLASTIC SMALL OUTLINE
16X (2)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
9
8
(16.25)
SOLDER PASTE EXAMPLE
STANDARD
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
16X (1.875)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
9
8
(16.375)
SOLDER PASTE EXAMPLE
PCB CLEARANCE & CREEPAGE OPTIMIZED
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221501/A 11/2014
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
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Copyright © 2015–2016, Texas Instruments Incorporated
Product Folder Links: ISO7820 ISO7820F
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31
PACKAGE OPTION ADDENDUM
www.ti.com
2-Sep-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
ISO7820DW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7820
ISO7820DWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7820
ISO7820DWW
ACTIVE
SOIC
DWW
16
45
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7820
ISO7820DWWR
ACTIVE
SOIC
DWW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7820
ISO7820FDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7820F
ISO7820FDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7820F
ISO7820FDWW
ACTIVE
SOIC
DWW
16
45
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7820F
ISO7820FDWWR
ACTIVE
SOIC
DWW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7820F
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
2-Sep-2016
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
10.75
10.7
2.7
12.0
16.0
Q1
ISO7820DWR
SOIC
DW
16
2000
330.0
16.4
ISO7820DWWR
SOIC
DWW
16
1000
330.0
24.4
18.0
10.0
3.0
20.0
24.0
Q1
ISO7820FDWR
SOIC
DW
16
2000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
ISO7820FDWWR
SOIC
DWW
16
1000
330.0
24.4
18.0
10.0
3.0
20.0
24.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO7820DWR
SOIC
DW
16
2000
350.0
350.0
43.0
ISO7820DWWR
SOIC
DWW
16
1000
350.0
350.0
43.0
ISO7820FDWR
SOIC
DW
16
2000
350.0
350.0
43.0
ISO7820FDWWR
SOIC
DWW
16
1000
350.0
350.0
43.0
Pack Materials-Page 2
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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
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TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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