Texas Instruments | UCCx732x Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers (Rev. J) | Datasheet | Texas Instruments UCCx732x Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers (Rev. J) Datasheet

Texas Instruments UCCx732x Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers (Rev. J) Datasheet
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UCC27323, UCC27324, UCC27325
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SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
UCCx732x Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
1 Features
3 Description
•
•
•
•
•
•
•
The UCC2732x and UCC3732x family of high-speed
dual-MOSFET Drivers deliver 4-A source and 4-A
sink peak current to effectively drive MOSFETs where
it is needed most at the Miller Plateau Region. A
unique BiPolar and MOSFET hybrid output stage in
parallel also allows efficient current sourcing and
sinking at low supply voltages. Three standard logic
options are offered — dual-inverting, dualnoninverting, and one-inverting and one-noninverting
driver. Input thresholds are based on TTL and CMOS
and independent of supply voltage and feature wide
input hysteresis offering excellent noise immunity.
The UCC2732x and UCC3732x family is available in
the standard SOIC-8 (D) or PDIP-8 (P) packages as
well as the thermally enhanced -8pin PowerPAD
MSOP package (DGN), drastically lowering thermal
resistance to improve long term reliability.
1
Bi-CMOS Output Architecture
±4 A Drive Current at the Miller Plateau Region
Constant-Current Even at Low Supply Voltages
Outputs Paralleled for Higher Drive Current
Available in MSOP-PowerPAD™ Package
TTL/CMOS Inputs Independent of Supply Voltage
Industry-Standard Pin-Out
2 Applications
•
•
•
Switch-Mode Power Supplies
DC-DC Converters
Solar Inverters, Motor Control, UPS
Device Information(1)
DEVICE
UCCx732x
KEY SPECS
-40C <= Temp <=
125C
4.5V <= VDD<= 15V
20ns/15ns - Rise/Fall
times @ 1.8nF load
35ns/25ns Rise/Fall
Prop Delay
PACKAGE
SOIC (8): 4.90 mm
× 3.91 mm
MSOP-PowerPAD
(8): 3.00 mm × 3.00
mm
PDIP (8): 9.81 mm
× 6.35 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Application Diagram
UCCx732x
INA
INB
1
N/C
N/C
8
2
INA
OUTA
7
3
GND
VDD
6
4
INB
OUTB
5
0.1 μF
1.0 μF
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
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Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
5
7.1
7.2
7.3
7.4
7.5
7.6
7.7
5
5
5
5
6
6
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram ......................................... 9
8.3 Feature Description................................................... 9
8.4 Device Functional Modes........................................ 10
9
Application and Implementation ........................ 11
9.1 Application Information............................................ 11
9.2 Typical Application ................................................. 12
10 Power Supply Recommendations ..................... 16
11 Layout................................................................... 17
11.1 Layout Guidelines ................................................. 17
11.2 Layout Example .................................................... 17
11.3 Thermal Considerations ........................................ 18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
19
20
13 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (July 2016) to Revision J
•
Page
Changed NC description from "No connection: must be grounded” to “No Internal Connection".......................................... 4
Changes from Revision H (May 2013) to Revision I
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Deleted Power Dissipation rows from Absolute Maximum Ratings ...................................................................................... 5
Changes from Revision G (March 2010) to Revision H
Page
•
Changed DSCHOTTKY diode direction and voltage of zener diode from 5.5 to 4.5 V in Figure 7 ............................................ 13
•
Added three paragraphs after first paragraph of Operational Waveforms and Circuit Layout section before Figure 9 ....... 16
2
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5 Device Comparison Table
OUTPUT CONFIGURATION
Dual inverting
Dual noninverting
One inverting, one noninverting
(1)
(2)
PACKAGED DEVICES (1)
TEMPERATURE
RANGE
TA = TJ
SOIC-8 (D)
MSOP-8 PowerPAD
(DGN) (2)
PDIP-8 (P)
–40°C to +125°C
UCC27323D
UCC27323DGN
UCC27323P
0°C to +70°C
UCC37323D
UCC37323DGN
UCC37323P
–40°C to +125°C
UCC27324D
UCC27324DGN
UCC27324P
0°C to +70°C
UCC37324D
UCC37324DGN
UCC37324P
–40°C to +125°C
UCC27325D
UCC27325DGN
UCC27325P
0°C to +70°C
UCC37325D
UCC37325DGN
UCC37325P
D (SOIC-8) and DGN (PowerPAD-MSOP) packages are available taped and reeled. Add R suffix to device type (for example
UCC27323DR, UCC27324DGNR) to order quantities of 2,500 devices per reel for D or 1,000 devices per reel for DGN package.
The PowerPAD is not directly connected to any leads of the package. However, the PowerPAD is electrically and thermally connected to
the substrate which is the ground of the device.
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6 Pin Configuration and Functions
D, DGN, or P Package
8-Pin SOIC, MSOP With PowerPAD, or PDIP
Top View
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
Common ground: This ground should be connected very closely to the source of the power MOSFET
which the driver is driving.
GND
3
—
INA
2
I
Input A: Input signal of the A driver which has logic compatible threshold and hysteresis. If not used,
this input must be tied to either VDD or GND; it must not be left floating.
INB
4
I
Input B: Input signal of the A driver which has logic compatible threshold and hysteresis. If not used,
this input must be tied to either VDD or GND; it must not be left floating.
N/C
1
—
No Internal Connection
N/C
8
—
No Internal Connection
OUTA
7
O
Driver output A: The output stage is capable of providing 4-A drive current to the gate of a power
MOSFET.
OUTB
5
O
Driver output B: The output stage is capable of providing 4-A drive current to the gate of a power
MOSFET.
VDD
6
I
Supply: Supply voltage and the power input connection for this device.
4
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
Analog input voltage (INA, INB)
MIN
MAX
UNIT
–0.3 to VDD + 0.3 V
not to exceed 16
V
Output body diode DC current (OUTA, OUTB)
IOUT_DC
IOUT_PULSED
Output current (OUTA, OUTB)
0.2
DC
0.2
Pulsed (0.5 µs)
4.5
Output voltage (OUTA, OUTB)
A
16
V
VDD
Supply voltage
–0.3
16
V
TJ
Junction operating temperature
–55
150
Tstg
Storage temperature
–65
150
(1)
(2)
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage
MAX
UNIT
4.5
15
0
15
V
UCC2732x
–40
125
°C
UCC3732x
0
70
°C
Input voltage
Operating junction temperature
NOM
V
7.4 Thermal Information
UCCx732x
THERMAL METRIC (1)
D
(SOIC)
DGN
(MSOP With
PowerPAD)
P
(PDIP)
UNIT
8 PINS
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
107.3
56.6
55.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
52.2
52.8
45.3
°C/W
RθJB
Junction-to-board thermal resistance
47.3
32.6
32.6
°C/W
ψJT
Junction-to-top characterization parameter
10.2
1.8
23
°C/W
ψJB
Junction-to-board characterization parameter
46.8
32.3
32.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
5.9
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
VDD = 4.5 to 15 V, TA = TJ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT (INA, INB)
VIN_H
Logic 1 input threshold
VIN_L
Logic 0 input threshold
2
1
0 V ← VIN ← VDD
Input current
–10
10
V
µA
OUTPUT (OUTA, OUTB)
Output current
VDD = 14 V (1)
VOH
High-level output voltage
VOH = VDD – VOUT, IOUT = –10 mA
VOL
Low-level output level
IOUT = 10 mA
Output resistance high
TA = 25°C, IOUT = –10 mA, VDD = 14 V (2)
25
TA = full range, IOUT = –10 mA, VDD = 14 V (2)
18
TA = 25°C, IOUT = 10 mA, VDD = 14 V
Output resistance low
4
(2)
Latch-up protection
450
22
45
30
35
42
1.9
TA = full range, IOUT = 10 mA, VDD = 14 V (2)
A
300
2.2
2.5
1.2
mV
Ω
4
500
mA
OVERALL
UCCx7323
INA = 0 V, INB = 0 V
300
450
INA = 0 V, INB = HIGH
300
450
INA = HIGH, INB = 0 V
300
450
INA = HIGH, INB = HIGH
300
450
INA = 0 V, INB = 0 V
IDD
Static Operating
Current
UCCx7324
UCCx7325
(1)
(2)
2
50
INA = 0 V, INB = HIGH
300
450
INA = HIGH, INB = 0 V
300
450
INA = HIGH, INB = HIGH
600
750
INA = 0 V, INB = 0 V
150
300
INA = 0 V, INB = HIGH
450
600
INA = HIGH, INB = 0 V
150
300
INA = HIGH, INB = HIGH
450
600
µA
The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
7.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
TYP
MAX
TR
Rise time (OUTA, OUTB)
PARAMETER
CLOAD = 1.8 nF, see Figure 1
20
40
TF
Fall time (OUTA, OUTB)
CLOAD = 1.8 nF, see Figure 1
15
40
TD1
Delay, IN rising (IN to OUT)
CLOAD = 1.8 nF, see Figure 1
25
40
TD2
Delay, IN falling (IN to OUT)
CLOAD = 1.8 nF, see Figure 1
35
35
6
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TEST CONDITIONS
MIN
UNIT
ns
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(a)
(b)
+5V
90%
90%
INPUT
0V
INPUT
10%
10%
t D1
16V
OUTPUT
tF
tR
90%
90%
0V
tR
t D2
tF
t D1
90%
t D2
OUTPUT
10%
10%
Figure 1. Switching Waveforms for (a) Inverting Driver and (b) Noninverting Driver
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7.7 Typical Characteristics
30
38
28
36
24
22
4.7 nF
20
18
2.2 nF
16
32
4.7 nF
30
28
2.2 nF
26
470 pF
24
1 nF
470 pF
14
12
10 nF
34
10 nF
tD2 - Delay Time - ns
tD1 - Delay Time - ns
26
22
1 nF
4
6
8
10
12
20
14
16
4
6
VDD - Supply Voltage - V
8
10
12
VDD - Supply Voltage - V
14
16
Figure 3. Delay Time (tD2) vs Supply Voltage
Figure 2. Delay Time (tD1) vs Supply Voltage
2.0
VON - Input Threshold Voltage - V
1.9
VDD = 15 V
1.8
1.7
1.6
1.5
VDD = 10 V
VDD = 4.5 V
1.4
1.3
1.2
-50
-25
0
25
50
75
100
125
TJ - Temperature - °C
Figure 4. Input Threshold vs Temperature
8
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8 Detailed Description
8.1 Overview
The UCC2732x and UCC3732x family of high-speed dual MOSFET drivers can deliver large peak currents into
capacitive loads. Three standard logic options are offered – dual-inverting, dual-noninverting and one-inverting
and one-noninverting driver. Using a design that inherently minimizes shoot-through current, these drivers deliver
4A of current where it is needed most at the Miller plateau region during the MOSFET switching transition. A
unique Bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at
low supply voltages.
8.2 Functional Block Diagram
INVERTING
N/C
1
INA
2
GND
3
N/C
7
OUTA
6
VDD
5
OUTB
NON-INVERTING
INVERTING
INB
8
4
NON-INVERTING
Copyright © 2016, Texas Instruments Incorporated
8.3 Feature Description
8.3.1 Input Stage
The input thresholds have a 3.3-V logic sensitivity over the full range of VDD voltage; yet it is equally compatible
with 0 V to VDD signals.
The inputs of UCC2732x and UCC3732x family of drivers are designed to withstand 500-mA reverse current
without either damage to the IC for logic upset. The input stage of each driver must be driven by a signal with a
short rise or fall time. This condition is satisfied in typical power-supply applications, where the input signals are
provided by a PWM controller or logic gates with fast transition times (<200 ns). The input stages to the drivers
function as a digital gate, and are not intended for applications where a slow-changing input voltage is used to
generate a switching output when the logic threshold of the input section is reached. While this may not be
harmful to the driver, the output of the driver may switch repeatedly at a high frequency.
Users should not attempt to shape the input signals to the driver in an attempt to slow down (or delay) the signal
at the output. If limited rise or fall times to the power device is desired, an external resistance can be added
between the output of the driver and the load device, which is generally a power MOSFET gate. The external
resistor may also help remove power dissipation from the device package, as discussed in (see Thermal
Considerations).
Importantly, input signal of the two channels, INA and INB, which has logic compatible threshold and hysteresis.
If not used, INA and INB must be tied to either VDD or GND; it must not be left floating.
8.3.2 Output Stage
Inverting outputs of the UCCx7323 and OUTA of the UCCx7325 are intended to drive external P-channel
MOSFETs. Noninverting outputs of the UCCx7324 and OUTB of the UCCx7325 are intended to drive external NChannel MOSFETs.
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Feature Description (continued)
Each output stage is capable of supplying ±4-A peak current pulses and swings to both VDD and GND. The
pullup and pulldown circuits of the driver are constructed of bipolar and MOSFET transistors in parallel. The peak
output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is
the RDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of
the bipolar transistor. Each output stage also provides a very low impedance to overshoot and undershoot due to
the body diode of the external MOSFET.
This means that in many cases, external-Schottky-clamp diodes are not required. The UCCx732x family delivers
4 A of gate drive where it is most needed during the MOSFET switching transition – at the Miller plateau region –
providing improved efficiency gains. A unique Bipolar and MOSFET hybrid output stage in parallel also allows
efficient current sourcing at low supply voltages.
8.4 Device Functional Modes
With VDD power supply in the range of 4.5 V to 15 V, the output stage is dependent on the states of the HI and
LI pins. Table 1 shows the UCCx732x truth table.
Table 1. Input and Output Table
INPUTS (VIN_L, VIN_H)
UCC37323x
UCC37324x
UCC37325x
INA
INB
OUTA
OUTB
OUTA
OUTB
OUTA
L
L
H
H
L
L
H
OUTB
L
L
H
H
L
L
H
H
H
H
L
L
H
H
L
L
L
H
H
L
L
H
H
L
H
Importantly, if INA and INB are not used, they must be tied to either VDD or GND; it must not be left floating.
10
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
High-frequency power supplies often require high-speed, high-current drivers such as the UCCx732x family. A
leading application is the needed to provide a high-power buffer stage between the PWM output of the control IC
and the gates of the primary power MOSFET or IGBT switching devices. In other cases, the driver IC is used to
drive the power-device gates through a drive transformer. Synchronous rectification supplies are also needed to
simultaneously drive multiple devices which presents an extremely large load to the control circuitry.
Driver ICs are used when having the primary PWM regulator IC directly drive the switching devices for one or
more reasons is not feasible. The PWMIC does not have the brute drive capability required for the intended
switching MOSFET, limiting the switching performance in the application. In other cases there may be a desire to
minimize the effect of high-frequency switching noise by placing the high current driver physically close to the
load. Also, newer ICs that target the highest operating frequencies do not incorporate onboard gate drivers at all.
Their PWM outputs are only intended to drive the high impedance input to a driver such as the UCCx732x.
Finally, the control IC is under thermal stress due to power dissipation, and an external driver helps by moving
the heat from the controller to an external package.
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9.2 Typical Application
UCCx732x
INA
INB
1
N/C
N/C
8
2
INA
OUTA
7
3
GND
VDD
6
4
INB
OUTB
5
0.1 μF
1.0 μF
Copyright © 2016, Texas Instruments Incorporated
Figure 5. UCCx732x Driving Two Independent MOSFETs
9.2.1 Design Requirements
To select proper device from UCCx732x family, TI recommends first checking the appropriate logic for the
outputs. UCCx7323 has dual inverting outputs; UCCx7324 has dual noninverting outputs; UCCx7325 have
inverting channel A and noninverting channel B. Moreover, some design considerations must be evaluated first in
order to make the most appropriate selection. Among these considerations are VDD, drive current, and power
dissipation.
9.2.2 Detailed Design Procedure
9.2.2.1 Source/Sink Capabilities During Miller Plateau
Large power MOSFETs present a large load to the control circuitry. Proper drive is required for efficient, reliable
operation. The UCCx732x drivers have been optimized to provide maximum drive to a power MOSFET during
the Miller plateau region of the switching transition. This interval occurs while the drain voltage is swinging
between the voltage levels dictated by the power topology, requiring the charging/discharging of the drain-gate
capacitance with current supplied or removed by the driver device [1].
Two circuits are used to test the current capabilities of the UCCx732x driver. In each case external circuitry is
added to clamp the output near 5 V while the IC is sinking or sourcing current. An input pulse of 250 ns is
applied at a frequency of 1 kHz in the proper polarity for the respective test. In each test there is a transient
period where the current peaked up and then settled down to a steady-state value. The noted current
measurements are made at a time of 200 ns after the input pulse is applied, after the initial transient. [1]
The first circuit in Figure 6 is used to verify the current sink capability when the output of the driver is clamped
around 5 V, a typical value of gate-source voltage during the Miller plateau region. The UCCx7323 is found to
sink 4.5 A at VDD = 15 V and 4.28 A at VDD = 12 V.
12
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Product Folder Links: UCC27323 UCC27324 UCC27325 UCC37323 UCC37324 UCC37325
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
www.ti.com
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
Typical Application (continued)
UCCx7323
VDD
1
N/C
N/C
INA
OUTA
2
3
8
10 Ω
DSCHOTTKY
7
VDD
GND
VADJ
6
100 µF
AL EL
1µ F CER
Signal
4
Generator
INB
OUTB
5.5V
5
VSNS
producing
250 ns wide
RSNS
0.1 Ω
pulse
1 µF CER
100 µF
AL EL
Copyright © 2016, Texas Instruments Incorporated
Figure 6. Current Sink Capability Test
The circuit shown in Figure 7 is used to test the current source capability with the output clamped to around 5 V
with a string of Zener diodes. The UCCx7323 is found to source 4.8 A at VDD = 15 V and 3.7 A at VDD = 12 V.
UCCx7323
1
2
3
VDD
N/C
N/C
INA
OUTA
8
DSCHOTTKY
10 Ω
7
GND
VDD
6
100 µF
AL EL
1 µF CER
Signal
Generator
producing
250 ns wide
pulse
4
INB
OUTB
4.5V
5
VSNS
RSNS
0.1 Ω
1 µF CER
100 µF
AL EL
Copywright © 2016, Texas Instruments Incorporated
Figure 7. Current Source Capability Test
Copyright © 2001–2018, Texas Instruments Incorporated
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13
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
www.ti.com
Typical Application (continued)
9.2.2.2 Parallel Outputs
The A and B drivers may be combined into a single driver by connecting the INA/INB inputs together as close to
the IC as possible, and the OUTA/OUTB outputs ties together if the external gate drive resistor is not used. In
some cases where the external gate drive resistor is used, Ti recommends that the resistor can be equally split in
OUTA and OUTB respectively to reduce the parasitic inductance induce unbalance between two channels, as
show in Figure 8.
UCCx7323/4
1
N/C
N/C 8
2
INA
OUTA 7
3
GND
VDD 6
4
INB
OUTB 5
RG
IN
RG
0.1 F
1.0 F
Figure 8. Parallel Operation of UCCx7323 and UCCx7324
Important consideration about paralleling two channels for UCCx7323/4 include: 1) INA and INB should be
shorted in PCB layout as close to the device as possible, as well as for OUTA and OUTB, in which condition
PCB layout parasitic mismatching between two channels could be minimized. 2) INA/B input slope signal should
be fast enough to avoid mismatched VIN_H/VIN_L, td1/td2 between channel-A and channel-B. TI recommends
having input signal slope faster than 20 V/us.
9.2.2.3 VDD
Although quiescent VDD current is very low, total supply current will be higher, depending on OUTA and OUTB
current and the programmed oscillator frequency. Total VDD current is the sum of quiescent VDD current and the
average OUT current. Knowing the operating frequency and the MOSFET gate charge (Qg), average OUT
current can be calculated using Equation 1.
IOUT = Qg × f
where f is frequency
(1)
For the best high-speed circuit performance, two VDD bypass capacitors are recommended to prevent noise
problems. The use of surface mount components is highly recommended. A 0.1-µF ceramic capacitor should be
located closest to the VDD to ground connection. In addition, a larger capacitor (such as 1 µF and above) with
relatively low ESR should be connected in parallel, to help deliver the high current peaks to the load. The parallel
combination of capacitors should present a low impedance characteristic for the expected current levels in the
driver application.
9.2.2.4 Driver Current and Power Requirements
The UCCx732x family of drivers is capable of delivering 4 A of current to a MOSFET gate for a period of tens of
nanoseconds. High peak current is required to turn the device ON quickly. Then, to turn the device OFF, the
driver is required to sink a similar amount of current to ground. This repeats at the operating frequency of the
power device. A MOSFET is used in this discussion because it is the most common type of switching device
used in high-frequency power conversion equipment.
14
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UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
www.ti.com
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
Typical Application (continued)
Reference [1] and reference [2] discuss the current required to drive a power MOSFET and other capacitive-input
switching devices. Reference [2] includes information on the previous generation of bipolar IC gate drivers.
When a driver IC is tested with a discrete, capacitive load, it is a fairly simple matter to calculate the power that is
required from the bias supply. The energy that must be transferred from the bias supply to charge the capacitor
is given by Equation 2.
E = ½CV2
where
•
•
C is the load capacitor
V is the bias voltage feeding the driver
(2)
There is an equal amount of energy transferred to ground when the capacitor is discharged. This leads to a
power loss given by Equation 3.
P = CV2 × f
where f is the switching frequency
(3)
This power is dissipated in the resistive elements of the circuit. Thus, with no external resistor between the driver
and gate, this power is dissipated inside the driver. Half of the total power is dissipated when the capacitor is
charged, and the other half is dissipated when the capacitor is discharged. An actual example using the
conditions of the previous gate drive waveform should help clarify this.
With VDD = 12 V, CLOAD = 10 nF, and f = 300 kHz, the power loss can be calculated as Equation 4.
P = 10 nF × (12 V)2 × (300 kHz) = 0.432 W
(4)
With a 12-V supply, this equates to a current of (see Equation 5):
I = P/V = 0.432 W /12 V = 36 mA
(5)
The actual current measured from the supply was 0.037 A, and is very close to the predicted value. But, the IDD
current that is due to the IC internal consumption should be considered. With no load the IC current draw is
0.0027 A. Under this condition the output rise and fall times are faster than with a load. This could lead to an
almost insignificant, yet measurable current due to cross-conduction in the output stages of the driver. However,
these small current differences are buried in the high frequency switching spikes, and are beyond the
measurement capabilities of a basic lab setup. The measured current with 10-nF load is reasonably close to that
expected.
The switching load presented by a power MOSFET can be converted to an equivalent capacitance by examining
the gate charge required to switch the device. This gate charge includes the effects of the input capacitance plus
the added charge needed to swing the drain of the device between the ON and OFF states. Most manufacturers
provide specifications that provide the typical and maximum gate charge, in nC, to switch the device under
specified conditions. Using the gate charge Qg, one can determine the power that must be dissipated when
charging a capacitor. This is done by using the equivalence Qg = Ceff × V to provide Equation 6 for power:
P = C × V2 × f = V × Qg × f
(6)
Equation 6 allows a power designer to calculate the bias power required to drive a specific MOSFET gate at a
specific bias voltage and a specific switching frequency.
9.2.3 Application Curves
Figure 9 shows the circuit performance achievable with a single driver (half of the 8-pin IC) driving a 10-nF load.
The input pulse width (not shown) is set to 300 ns to show both transitions in the output waveform. Note the
linear rise and fall edges of the switching waveforms which is due to the constant output current characteristic of
the driver as opposed to the resistive output impedance of traditional MOSFET-based gate drivers.
Sink and source currents of the driver are dependent upon the VDD value and the output capacitive load. The
larger the VDD value, the higher the current capability; also, the larger the capacitive load, the higher the current
sink and source capability.
Trace resistance and inductance, including wires and cables for testing, slows down the rise and fall times of the
outputs; thus reducing the current capabilities of the driver.
Copyright © 2001–2018, Texas Instruments Incorporated
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SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
www.ti.com
Typical Application (continued)
To achieve higher current results, reduce resistance and inductance on the board as much as possible and
increase the capacitive load value in order to swamp out the effect of inductance values.
CL = 10 nF, CL = 10 nF, VDD = 12 V
Figure 9. Rising and Falling Time of UCCx732x
10 Power Supply Recommendations
The recommended bias supply voltage range for UCCx732x is from 4.5 V to 15 V. The upper end of this range is
driven by the 16 V absolute maximum voltage rating of the VDD. TI recommends keeping proper margin to allow
for transient voltage spikes.
A local bypass capacitor must be placed between the VDD and GND pins. And this capacitor must be placed as
close to the device as possible. A low ESR, ceramic surface mount capacitor is recommended. TI recommends
using 2 capacitors across VDD and GND: a 100-nF ceramic surface-mount capacitor for high frequency filtering
placed very close to VDD and GND pin, and another surface-mount capacitor, 220 nF to
10 µF, for IC bias requirements.
16
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UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
www.ti.com
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
11 Layout
11.1 Layout Guidelines
Optimum performance of high and low-side gate drivers cannot be achieved without taking due considerations
during circuit board layout. The following points are emphasized:
1) Low ESR/ESL capacitors must be connected close to the IC between VDD and GND pins to support high
peak currents drawn from VDD during the turn-on of the external MOSFETs.
2) Grounding considerations:
The first priority in designing grounding connections is to confine the high peak currents that charge and
discharge the MOSFET gates to a minimal physical area. This will decrease the loop inductance and
minimize noise issues on the gate terminals of the MOSFETs. The gate driver must be placed as close as
possible to the MOSFETs.
Star-point grounding is a good way to minimize noise coupling from one current loop to another. The GND of
the driver is connected to the other circuit nodes such as source of power MOSFET and ground of PWM
controller at one, single point. The connected paths must be as short as possible to reduce inductance and
be as wide as possible to reduce resistance.
Use a ground plane to provide noise shielding. Fast rise and fall times at OUT may corrupt the input signals
during transition. The ground plane must not be a conduction path for any current loop. Instead the ground
plane must be connected to the star-point with one single trace to establish the ground potential. In addition
to noise shielding, the ground plane can help in power dissipation as well.
3) In noisy environments, tying inputs of an unused channel of the UCC2742x device to VDD or GND using short
traces in order to ensure that the output is enabled and to prevent noise from causing malfunction in the output
may be necessary.
4) Separate power traces and signal traces, such as output and input signals.
11.2 Layout Example
UCCx732x
Ground plane
(Bottom Layer)
Ext. Gate Resistance
(Ch-A)
INA
OUTA
GND
VDD
INB
OUTB
Bypassing Cap, 0.1 F
To Ch-A
Load
Ext. Gate Resistance
(Ch-B)
To Ch-B
Load
Bypassing Cap, 1.0 F
Figure 10. Recommended PCB Layout for UCCx732x
Copyright © 2001–2018, Texas Instruments Incorporated
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UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
www.ti.com
11.3 Thermal Considerations
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the IC package. In order for a power driver to be useful over a particular temperature range, the
package must allow for the efficient removal of the heat produced while keeping the junction temperature within
rated limits. The UCCx732x family of drivers is available in three different packages to cover a range of
application requirements.
The MSOP PowerPAD-8 (DGN) package significantly relieves this concern by offering an effective means of
removing the heat from the semiconductor junction. As illustrated in reference [3], the PowerPAD packages offer
a lead-frame die pad that is exposed at the base of the package. This pad is soldered to the copper on the PC
board directly underneath the IC package, reducing the θJC down to 4.7°C/W. Data is presented in reference [3]
to show that the power dissipation can be quadrupled in the PowerPAD configuration when compared to the
standard packages. The PC board must be designed with thermal lands and thermal vias to complete the heat
removal subsystem, as summarized in reference [4]. This design allows a significant improvement in heat sinking
over that which is available in the D or P packages, and is shown to more than double the power capability of the
D and P packages.
NOTE
The PowerPAD is not directly connected to any leads of the package. However, the
PowerPad is electrically and thermally connected to the substrate which is the ground of
the device.
18
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Product Folder Links: UCC27323 UCC27324 UCC27325 UCC37323 UCC37324 UCC37325
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
www.ti.com
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
See the following for related documentation:
1. Power Supply Seminar SEM-1400 Topic 2, Design And Application Guide For High Speed MOSFET Gate
Drive Circuits (SLUP133)
2. Practical Considerations in High Performance MOSFET, IGBT and MCT Gate Drive Circuits (SLUA105)
3. PowerPad Thermally Enhanced Package (SLMA002)
4. PowerPAD Made Easy (SLMA004)
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
UCC27323
Click here
Click here
Click here
Click here
Click here
UCC27324
Click here
Click here
Click here
Click here
Click here
UCC27325
Click here
Click here
Click here
Click here
Click here
UCC37323
Click here
Click here
Click here
Click here
Click here
UCC37324
Click here
Click here
Click here
Click here
Click here
UCC37325
Click here
Click here
Click here
Click here
Click here
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2001–2018, Texas Instruments Incorporated
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Product Folder Links: UCC27323 UCC27324 UCC27325 UCC37323 UCC37324 UCC37325
19
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492J – JUNE 2001 – REVISED SEPTEMBER 2018
www.ti.com
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Sep-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
UCC27323D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27323
UCC27323DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27323
UCC27323DGN
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27323
UCC27323DGNR
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27323
UCC27323DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27323
UCC27323DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27323
UCC27323P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 125
UCC27323P
UCC27324D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DGN
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DGNG4
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DGNR
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DGNRG4
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27324
UCC27324P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 125
UCC27324P
UCC27324PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 125
UCC27324P
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
6-Sep-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
UCC27325D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27325
UCC27325DGN
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27325
UCC27325DGNR
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
27325
UCC27325DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
27325
UCC27325P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 125
UCC27325P
UCC27325PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 125
UCC27325P
UCC37323D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37323
UCC37323DGN
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37323
UCC37323DGNR
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37323
UCC37323DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37323
UCC37323P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
UCC37323P
UCC37324D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37324
UCC37324DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37324
UCC37324DGN
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37324
UCC37324DGNR
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37324
UCC37324DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37324
UCC37324P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
UCC37324P
UCC37324PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
UCC37324P
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
6-Sep-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
UCC37325D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37325
UCC37325DGN
ACTIVE
HVSSOP
DGN
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37325
UCC37325DGNR
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37325
UCC37325DGNRG4
ACTIVE
HVSSOP
DGN
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
37325
UCC37325DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
37325
UCC37325P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
UCC37325P
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
6-Sep-2019
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF UCC27324 :
• Automotive: UCC27324-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 4
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Sep-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
UCC27323DGNR
Package Package Pins
Type Drawing
SPQ
HVSSOP
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC27323DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC27324DGNR
HVSSOP
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC27324DGNR
HVSSOP
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC27324DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC27324DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC27325DGNR
HVSSOP
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC27325DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC37323DGNR
HVSSOP
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC37323DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC37324DGNR
HVSSOP
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC37324DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
UCC37325DGNR
HVSSOP
DGN
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
UCC37325DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Sep-2019
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
UCC27323DGNR
HVSSOP
DGN
8
2500
364.0
364.0
27.0
UCC27323DR
SOIC
D
8
2500
340.5
338.1
20.6
UCC27324DGNR
HVSSOP
DGN
8
2500
346.0
346.0
29.0
UCC27324DGNR
HVSSOP
DGN
8
2500
364.0
364.0
27.0
UCC27324DR
SOIC
D
8
2500
340.5
338.1
20.6
UCC27324DR
SOIC
D
8
2500
367.0
367.0
35.0
UCC27325DGNR
HVSSOP
DGN
8
2500
364.0
364.0
27.0
UCC27325DR
SOIC
D
8
2500
340.5
338.1
20.6
UCC37323DGNR
HVSSOP
DGN
8
2500
364.0
364.0
27.0
UCC37323DR
SOIC
D
8
2500
340.5
338.1
20.6
UCC37324DGNR
HVSSOP
DGN
8
2500
364.0
364.0
27.0
UCC37324DR
SOIC
D
8
2500
340.5
338.1
20.6
UCC37325DGNR
HVSSOP
DGN
8
2500
364.0
364.0
27.0
UCC37325DR
SOIC
D
8
2500
340.5
338.1
20.6
Pack Materials-Page 2
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
A
.004 [0.1] C
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.150
[3.81]
.189-.197
[4.81-5.00]
NOTE 3
4X (0 -15 )
4
5
B
8X .012-.020
[0.31-0.51]
.010 [0.25]
C A B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 -8
.016-.050
[0.41-1.27]
DETAIL A
(.041)
[1.04]
TYPICAL
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
6X (.050 )
[1.27]
SYMM
5
4
(R.002 ) TYP
[0.05]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
METAL
SOLDER MASK
OPENING
EXPOSED
METAL
.0028 MAX
[0.07]
ALL AROUND
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
EXPOSED
METAL
.0028 MIN
[0.07]
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
6X (.050 )
[1.27]
SYMM
5
4
(R.002 ) TYP
[0.05]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
TM
DGN0008D
PowerPAD VSSOP - 1.1 mm max height
SCALE 4.000
SMALL OUTLINE PACKAGE
C
5.05
TYP
4.75
A
0.1 C
SEATING
PLANE
PIN 1 INDEX AREA
6X 0.65
8
1
2X
3.1
2.9
NOTE 3
1.95
4
5
8X
B
3.1
2.9
NOTE 4
0.38
0.25
0.13
C A B
0.23
0.13
SEE DETAIL A
EXPOSED THERMAL PAD
4
5
0.25
GAGE PLANE
1.89
1.63
9
1.1 MAX
8
1
0 -8
0.15
0.05
0.7
0.4
DETAIL A
A 20
1.57
1.28
TYPICAL
4225481/A 11/2019
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187.
www.ti.com
EXAMPLE BOARD LAYOUT
TM
DGN0008D
PowerPAD VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(2)
NOTE 9
METAL COVERED
BY SOLDER MASK
(1.57)
SOLDER MASK
DEFINED PAD
SYMM
8X (1.4)
(R0.05) TYP
8
8X (0.45)
1
(3)
NOTE 9
SYMM
9
(1.89)
(1.22)
6X (0.65)
5
4
( 0.2) TYP
VIA
(0.55)
SEE DETAILS
(4.4)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 15X
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
OPENING
EXPOSED METAL
EXPOSED METAL
0.05 MAX
ALL AROUND
NON-SOLDER MASK
DEFINED
(PREFERRED)
0.05 MIN
ALL AROUND
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
15.000
4225481/A 11/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
9. Size of metal pad may vary due to creepage requirement.
www.ti.com
EXAMPLE STENCIL DESIGN
TM
DGN0008D
PowerPAD VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(1.57)
BASED ON
0.125 THICK
STENCIL
SYMM
(R0.05) TYP
8X (1.4)
8X (0.45)
8
1
SYMM
(1.89)
BASED ON
0.125 THICK
STENCIL
6X (0.65)
5
4
METAL COVERED
BY SOLDER MASK
(4.4)
SEE TABLE FOR
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
SOLDER PASTE EXAMPLE
EXPOSED PAD 9:
100% PRINTED SOLDER COVERAGE BY AREA
SCALE: 15X
STENCIL
THICKNESS
SOLDER STENCIL
OPENING
0.1
0.125
0.15
0.175
1.76 X 2.11
1.57 X 1.89 (SHOWN)
1.43 X 1.73
1.33 X 1.60
4225481/A 11/2019
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
TM
DGN0008G
PowerPAD VSSOP - 1.1 mm max height
SCALE 4.000
SMALL OUTLINE PACKAGE
C
5.05
TYP
4.75
A
0.1 C
SEATING
PLANE
PIN 1 INDEX AREA
6X 0.65
8
1
2X
3.1
2.9
NOTE 3
1.95
4
5
8X
B
3.1
2.9
NOTE 4
0.38
0.25
0.13
C A B
0.23
0.13
SEE DETAIL A
EXPOSED THERMAL PAD
4
5
0.25
GAGE PLANE
2.15
1.95
9
1.1 MAX
8
1
0 -8
0.15
0.05
0.7
0.4
DETAIL A
A 20
1.846
1.646
TYPICAL
4225480/A 11/2019
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187.
www.ti.com
EXAMPLE BOARD LAYOUT
TM
DGN0008G
PowerPAD VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(2)
NOTE 9
METAL COVERED
BY SOLDER MASK
(1.846)
SOLDER MASK
DEFINED PAD
SYMM
8X (1.4)
(R0.05) TYP
8
8X (0.45)
1
(3)
NOTE 9
SYMM
9
(2.15)
(1.22)
6X (0.65)
5
4
( 0.2) TYP
VIA
(0.55)
SEE DETAILS
(4.4)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 15X
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
OPENING
EXPOSED METAL
EXPOSED METAL
0.05 MAX
ALL AROUND
NON-SOLDER MASK
DEFINED
(PREFERRED)
0.05 MIN
ALL AROUND
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
15.000
4225480/A 11/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
9. Size of metal pad may vary due to creepage requirement.
www.ti.com
EXAMPLE STENCIL DESIGN
TM
DGN0008G
PowerPAD VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(1.846)
BASED ON
0.125 THICK
STENCIL
SYMM
(R0.05) TYP
8X (1.4)
8X (0.45)
8
1
SYMM
(2.15)
BASED ON
0.125 THICK
STENCIL
6X (0.65)
5
4
METAL COVERED
BY SOLDER MASK
(4.4)
SEE TABLE FOR
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
SOLDER PASTE EXAMPLE
EXPOSED PAD 9:
100% PRINTED SOLDER COVERAGE BY AREA
SCALE: 15X
STENCIL
THICKNESS
SOLDER STENCIL
OPENING
0.1
0.125
0.15
0.175
2.06 X 2.40
1.846 X 2.15 (SHOWN)
1.69 X 1.96
1.56 X 1.82
4225480/A 11/2019
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
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TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
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warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2019, Texas Instruments Incorporated
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