Texas Instruments | CSD23280F3 –12-V P-Channel FemtoFET MOSFET (Rev. A) | Datasheet | Texas Instruments CSD23280F3 –12-V P-Channel FemtoFET MOSFET (Rev. A) Datasheet

Texas Instruments CSD23280F3 –12-V P-Channel FemtoFET MOSFET (Rev. A) Datasheet
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CSD23280F3
SLPS601A – APRIL 2016 – REVISED AUGUST 2017
CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET
1 Features
•
•
•
•
1
•
•
•
•
Product Summary
Low On-Resistance
Ultra-Low Qg and Qgd
High-Operating Drain Current
Ultra-Small Footprint
– 0.73 mm × 0.64 mm
Ultra-Low Profile
– 0.35-mm Max Height
Integrated ESD Protection Diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
Lead and Halogen Free
RoHS Compliant
TA = 25°C
•
•
UNIT
Drain-to-Source Voltage
–12
V
Qg
Gate Charge Total (4.5 V)
0.95
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th)
Threshold Voltage
0.068
nC
VGS = –1.5 V
230
VGS = –1.8 V
180
VGS = –2.5 V
129
VGS = –4.5 V
97
–0.65
mΩ
V
Device Information(1)
2 Applications
•
•
TYPICAL VALUE
VDS
Optimized for Load Switch Applications
Optimized for General Purpose Switching
Applications
Battery Applications
Handheld and Mobile Applications
3 Description
This –12-V, 97-mΩ, P-Channel FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a substantial
reduction in footprint size.
DEVICE
QTY
CSD23280F3
3000
CSD23280F3T
250
MEDIA
PACKAGE
SHIP
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
–12
V
VGS
Gate-to-Source Voltage
–6
V
ID
Continuous Drain Current(1)
1.8
A
IDM
Pulsed Drain Current(1)(2)
11.4
A
PD
Power Dissipation(1)
500
mW
Human-Body Model (HBM)
4000
Charged-Device Model (CDM)
2000
V(ESD)
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150
V
°C
(1) Typical RθJA = 255°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm)
thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Typical Part Dimensions
Top View
G
0.35 mm
D
0.64 mm
0.73 mm
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD23280F3
SLPS601A – APRIL 2016 – REVISED AUGUST 2017
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1
6.2
6.3
6.4
6.5
7
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
4 Revision History
Changes from Original (April 2016) to Revision A
Page
•
Added the Receiving Notification of Documentation Updates section in Device and Documentation Support ..................... 7
•
Updated the Recommended Stencil Pattern .......................................................................................................................... 9
2
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5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = –250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –9.6 V
–50
nA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –5 V
–25
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = –250 μA
V
RDS(on)
Drain-to-source on-resistance
gfs
Transconductance
–12
–0.40
V
–0.65
–0.95
VGS = –1.5 V, IDS = –0.1 A
230
399
VGS = –1.8 V, IDS = –0.4 A
180
250
VGS = –2.5 V, IDS = –0.4 A
129
165
VGS = –4.5 V, IDS = –0.4 A
97
116
VDS = –1.2 V, IDS = –0.4 A
3
mΩ
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer Capacitance
RG
Series gate resistance
Qg
Gate charge total (4.5 V)
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
180
234
pF
73
95
pF
8.5
11.1
pF
1.23
nC
VGS = 0 V, VDS = –6 V,
ƒ = 1 MHz
Ω
9
0.95
VDS = –6 V, IDS = –0.4 A
VDS = –6 V, VGS = 0 V
0.068
nC
0.30
nC
0.15
nC
1.07
nC
8
ns
VDS = –6 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 0 Ω
4
ns
21
ns
8
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = –0.4 A, VGS = 0 V
–0.73
–1.0
V
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
(1)
(2)
TYPICAL VALUES
Junction-to-ambient thermal resistance (1)
90
Junction-to-ambient thermal resistance (2)
255
UNIT
°C/W
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu.
Device mounted on FR4 material with minimum Cu mounting area.
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5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
5
VGS = -1.5 V
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
9
8
-IDS - Drain-To-Source Current (A)
-IDS - Drain-to-Source Current (A)
10
7
6
5
4
3
2
1
TC = 125° C
TC = 25° C
TC = -55° C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
-VDS - Drain-to-Source Voltage (V)
1.2
1.4
0
0.4
D002
0.8
1.2
1.6
2
-VGS - Gate-To-Source Voltage (V)
2.4
2.8
D003
VDS = –5 V
Figure 2. Saturation Characteristics
4
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Figure 3. Transfer Characteristics
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Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
1000
4
C - Capacitance (pF)
-VGS - Gate-to-Source Voltage (V)
5
4.5
3.5
3
2.5
2
1.5
100
10
1
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
0.5
1
0
0
0.2
0.4
0.6
0.8
Qg - Gate Charge (nC)
VDS = –6 V
1
0
1.2
2
D004
D005
Figure 5. Capacitance
350
RDS(on) - On-State Resistance (m:)
0.95
-VGS(th) - Threshold Voltage (V)
12
ID = –0.4 A
Figure 4. Gate Charge
0.85
0.75
0.65
0.55
0.45
0.35
0.25
-75
4
6
8
10
-VDS - Drain-to-Source Voltage (V)
TC = 25° C, I D = -0.4 A
TC = 125° C, I D = -0.4 A
300
250
200
150
100
50
0
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
0
175
1
D006
2
3
4
5
6
-VGS - Gate-To-Source Voltage (V)
7
8
D007
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
10
1.3
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
-ISD - Source-To-Drain Current (A)
Normalized On-State Resistance
1.4
1.2
1.1
1
0.9
0.8
0.7
-75
TC = 25qC
TC = 125qC
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
VGS = –4.5 V
125
150
175
0
0.2
0.4
0.6
0.8
-VSD - Source-To-Drain Voltage (V)
D008
1
D009
ID = –0.4 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
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Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
3
-IDS - Drain-to-Source Current (A)
-IDS - Drain-To-Source Current (A)
100
10
1
0.1
100 ms
10 ms
0.01
0.1
1 ms
100 µs
1
10
-VDS - Drain-To-Source Voltage (V)
100
2.5
2
1.5
1
0.5
0
-50
-25
D010
0
25
50
75
100 125
TA - Ambient Temperature (qC)
150
175
D011
Single pulse, max RθJA = 255°C/W
Figure 10. Maximum Safe Operating Area
6
Figure 11. Maximum Drain Current vs Temperature
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SLPS601A – APRIL 2016 – REVISED AUGUST 2017
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
FemtoFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Mechanical Dimensions
0.73
0.65
A
B
PIN 1 INDEX AREA
0.64
0.56
0.35 MAX
C
SEATING PLANE
0.4
0.225
2
3
0.175
0.51
0.49
0.35
1
0.015
0.16
2X
0.14
C B
A
2X
0.16
0.14
0.015
C A
B
0.26
0.24
(1)
All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994).
(2)
This drawing is subject to change without notice.
(3)
This package is a lead-free solder land design.
Table 1. Pin Configuration
8
POSITION
DESIGNATION
Pin 1
Gate
Pin 2
Source
Pin 3
Drain
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7.2 Recommended Minimum PCB Layout
(0.15)
2X (0.25)
2X (0.15)
0.05 MIN
ALL AROUND
TYP
1
3
SYMM
(0.35)
(0.5)
2
(R0.05) TYP
SOLDER MASK
OPENING
TYP
PKG
METAL UNDER
SOLDER MASK
TYP
(0.175)
(0.4)
(1)
All dimensions are in millimeters.
7.3 Recommended Stencil Pattern
2X (0.25)
2X (0.2)
(0.15)
1
3
SYMM
(0.4)
2X (0.15)
(0.5)
2
PKG
(R0.05) TYP
2X SOLDER MASK EDGE
(0.175)
(0.4)
(1)
All dimensions are in millimeters.
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PACKAGE OPTION ADDENDUM
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1-Aug-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
CSD23280F3
ACTIVE
PICOSTAR
YJM
3
3000
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
-55 to 150
5
CSD23280F3T
ACTIVE
PICOSTAR
YJM
3
250
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
-55 to 150
5
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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1-Aug-2017
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Aug-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
CSD23280F3
PICOST
AR
YJM
3
3000
178.0
8.4
CSD23280F3
PICOST
AR
YJM
3
3000
180.0
8.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
0.7
0.79
0.44
4.0
8.0
Q2
0.7
0.79
0.44
4.0
8.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Aug-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD23280F3
PICOSTAR
YJM
3
3000
220.0
220.0
35.0
CSD23280F3
PICOSTAR
YJM
3
3000
182.0
182.0
20.0
Pack Materials-Page 2
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and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory
requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s noncompliance with the terms and provisions of this Notice.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2017, Texas Instruments Incorporated
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