Texas Instruments | bq40z50 Advanced Gas Gauge Circuit Design (Rev. A) | Application notes | Texas Instruments bq40z50 Advanced Gas Gauge Circuit Design (Rev. A) Application notes

Texas Instruments bq40z50 Advanced Gas Gauge Circuit Design (Rev. A) Application notes
Application Report
SLUA660A – November 2012 – Revised September 2014
bq40z50 Advanced Gas Gauge Circuit Design
............................................................................................................ Battery Management Solutions
ABSTRACT
Components in the bq40z50 reference design are explained in this application report. Design analysis and
suggested tradeoffs are provided, where appropriate.
1
2
3
4
5
6
Contents
Introduction ................................................................................................................... 1
High-Current Path ........................................................................................................... 2
Gas Gauge Circuit ........................................................................................................... 5
Secondary-Current Protection.............................................................................................. 9
Secondary-Overvoltage Protection ...................................................................................... 14
Reference Design Schematic ............................................................................................. 15
List of Figures
1
bq40z50 Protection FETs ................................................................................................... 2
2
FUSE Circuit .................................................................................................................. 3
3
Lithium-Ion Cell Connections ............................................................................................... 4
4
Sense Resistor ............................................................................................................... 4
5
Differential Filter.............................................................................................................. 5
6
Power Supply Decoupling .................................................................................................. 6
7
System Present Pull-Down Resistor
8
9
10
11
12
13
14
15
16
17
...................................................................................... 7
System Present ESD and Short Protection .............................................................................. 8
ESD Protection for SMB Communication ................................................................................. 8
FUSE Circuit .................................................................................................................. 9
Cell and BAT Inputs ........................................................................................................ 10
bq40z50 PACK and FET Control......................................................................................... 11
Thermistor Drive ............................................................................................................ 12
LEDs ......................................................................................................................... 12
PTC Thermistor ............................................................................................................. 13
bq294700 Cell Inputs and Time-Delay Capacitor ...................................................................... 14
bq40z50 Schematic ........................................................................................................ 15
List of Tables
1
Introduction
The bq40z50 advanced gas gauge has approximately 61 components in the reference design for a fourthermistor, five-LED, four-cell application. The device is divided into the following classifications: HighCurrent Path, Gas Gauge Circuit, Secondary-Current Protection and Cell-Balancing Circuit, and
Secondary-Voltage Protection.
This discussion is based on the four-cell reference design for the bq40z50 and bq294700 chipset.
Figure 17 shows the bq40z50 reference design schematic.
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
1
High-Current Path
2
www.ti.com
High-Current Path
The high-current path begins at the PACK+ terminal of the battery pack. As charge current travels through
the pack, it finds its way through protection FETs, a chemical fuse, the lithium-ion cells and cell
connections, and the sense resistor, and then returns to the PACK– terminal (see Section 6). In addition,
some components are placed across the PACK+ and PACK– terminals to reduce effects from electrostatic
discharge.
2.1
Protection FETs
The N-channel charge and discharge FETs must be selected for a given application. Most portable battery
applications are a good match for the Si7114DN. The Vishay Si7114DN is an 18.3-A, 30-V device with
Rds(on) of 7.5 mΩ when the gate drive voltage is 10 V.
If a precharge FET is used, R1 is calculated to limit the precharge current to the desired rate. Be sure to
account for the power dissipation of the series resistor. The precharge current is limited to (Vcharger –
Vbat) / R1 and maximum power dissipation is (Vcharger – Vbat)2/R1.
The gates of all protection FETs are pulled to the source with a high-value resistor between the gate and
source to ensure they are turned off if the gate drive is open.
Capacitors C1 and C2 help protect the FETs during an ESD event. The use of two devices ensures
normal operation if one of them becomes shorted. In order to have good ESD protection, the copper trace
inductance of the capacitor leads must be designed to be as short and wide as possible. Ensure that the
voltage rating of both C1 and C2 are adequate to hold off the applied voltage if one of the capacitors
becomes shorted.
Figure 1. bq40z50 Protection FETs
2
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
High-Current Path
www.ti.com
2.2
Chemical Fuse
The chemical fuse (Dexerials, Uchihashi, and so forth) is ignited under command from either the
bq294700 secondary voltage protection IC or from the FUSE pin of the gas gauge. Either of these events
applies a positive voltage to the gate of Q5, shown in Figure 2, which then sinks current from the third
terminal of the fuse, causing it to ignite and open permanently.
It is important to carefully review the fuse specifications and match the required ignition current to that
available from the N-channel FET. Ensure that the proper voltage, current, and Rds(on) ratings are used
for this device. The fuse control circuit is discussed in detail in Section 3.5.
Figure 2. FUSE Circuit
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
3
High-Current Path
2.3
www.ti.com
Lithium-Ion Cell Connections
The important thing to remember about the cell connections is that high current flows through the top and
bottom connections; therefore, the voltage sense leads at these points must be made with a Kelvin
connection to avoid any errors due to a drop in the high-current copper trace. The location marked 4P in
Figure 3 indicates the Kelvin connection of the most positive battery node. The connection marked 1N is
equally important. The VC5 pin (a ground reference for cell voltage measurement), which is in the older
generation devices, is not in the bq40z50 device. Hence, the single-point connection at 1N to the lowcurrent ground is needed to avoid an undesired voltage drop through long traces while the gas gauge is
measuring the bottom cell voltage.
Figure 3. Lithium-Ion Cell Connections
2.4
Sense Resistor
As with the cell connections, the quality of the Kelvin connections at the sense resistor is critical. The
sense resistor must have a temperature coefficient no greater than 50 ppm in order to minimize current
measurement drift with temperature. Choose the value of the sense resistor to correspond to the available
overcurrent and short-circuit ranges of the bq40z50. Select the smallest value possible in order to
minimize the negative voltage generated on the bq40z50 VSS node(s) during a short circuit. This pin has
an absolute minimum of –0.3 V. Parallel resistors can be used as long as good Kelvin sensing is ensured.
The device is designed to support a 1-mΩ to 3-mΩ sense resistor.
The ground scheme of bq40z50 is different from the older generation devices. In previous devices, the
device ground (or low current ground) is connected to the SRN side of the Rsense resistor pad. The
bq40z50, however, connects the low-current ground on the SRP side of the Rsense resistor pad, close to
the battery 1N terminal (see Section 2.3). This is because the bq40z50 has one less VC pin (a ground
reference pin VC5) compared to the previous devices. The pin was removed and was internally combined
to SRP.
Figure 4. Sense Resistor
4
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
High-Current Path
www.ti.com
2.5
ESD Mitigation
A pair of series 0.1-μF ceramic capacitors is placed across the PACK+ and PACK– terminals to help in
the mitigation of external electrostatic discharges. The two devices in series ensure continued operation of
the pack if one of the capacitors becomes shorted.
Optionally, a tranzorb such as the SMBJ2A can be placed across the terminals to further improve ESD
immunity.
3
Gas Gauge Circuit
The Gas Gauge Circuit includes the bq40z50 and its peripheral components. These components are
divided into the following groups: Differential Low-Pass Filter, PBI, System Present, SMBus
Communication, FUSE circuit, and LED.
3.1
Coulomb-Counting Interface
The bq40z50 uses an integrating delta-sigma ADC for current measurements. Add a 100-Ω resistor from
the sense resistor to the SRP and SRN inputs of the device. Place a 0.1-µF (C18) filter capacitor across
the SRP and SRN inputs. Optional 0.1-µF filter capacitors (C19 and C20) can be added for additional
noise filtering, if required for your circuit. Place all filter components as close as possible to the device.
Route the traces from the sense resistor in parallel to the filter circuit. Adding a ground plane around the
filter network can add additional noise immunity.
Figure 5. Differential Filter
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
5
Gas Gauge Circuit
3.2
www.ti.com
Power Supply Decoupling and PBI
The bq40z50 has an internal LDO that is internally compensated and does not require an external
decoupling capacitor.
The PBI pin is used as a power supply backup input pin providing power during brief transient power
outages. A standard 2.2-µF ceramic capacitor is connected from the PBI pin to ground as shown in
Figure 6.
Figure 6. Power Supply Decoupling
6
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
Gas Gauge Circuit
www.ti.com
3.3
System Present
The System Present signal is used to inform the gas gauge whether the pack is installed into or removed
from the system. In the host system, this pin is grounded. The PRES pin of the bq40z50 is occasionally
sampled to test for system present. To save power, an internal pullup is provided by the gas gauge during
a brief 4-μs sampling pulse once per second. A resistor can be used to pull the signal low and the
resistance must be 20 kΩ or lower to insure that the test pulse is lower than the VIL limit. The pull-up
current source is typically 10 µA to 20 µA.
Figure 7. System Present Pull-Down Resistor
Because the System Present signal is part of the pack connector interface to the outside world, it must be
protected from external electrostatic discharge events. An integrated ESD protection on the PRES device
pin reduces the external protection requirement to just R29 for an 8-kV ESD contact rating. However, if it
is possible that the System Present signal may short to PACK+, then R28 and D4 must be included for
high-voltage protection.
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
7
Gas Gauge Circuit
www.ti.com
Figure 8. System Present ESD and Short Protection
3.4
SMBus Communication
The SMBus clock and data pins have integrated high-voltage ESD protection circuits, however, adding a
Zener diode (D2 and D3) and series resistor (R24 and R26) provides more robust ESD performance.
The SMbus clock and data lines have internal pulldown. When the gas gauge senses that both lines are
low (such as during removal of the pack), the device performs auto-offset calibration and then goes into
sleep mode to conserve power.
Figure 9. ESD Protection for SMB Communication
8
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
Gas Gauge Circuit
www.ti.com
3.5
FUSE Circuitry
The FUSE pin of the bq40z50 is designed to ignite the chemical fuse if one of the various safety criteria is
violated. The FUSE pin also monitors the state of the secondary-voltage protection IC. Q5 ignites the
chemical fuse when its gate is high. The 7-V output of the bq294700 is divided by R16 and R6, which
provides adequate gate drive for Q5 while guarding against excessive back current into the bq294700 if
the FUSE signal is high.
Using C3 is generally a good practice, especially for RFI immunity. C3 may be removed, if desired,
because the chemical fuse is a comparatively slow device and is not affected by any sub-microsecond
glitches that come from the FUSE output during the cell connection process.
Figure 10. FUSE Circuit
When the bq40z50 is commanded to ignite the chemical fuse, the FUSE pin activates to give a typical 8-V
output. The new design makes it possible to use a higher Vgs FET for Q5. This improves the robustness
of the system, as well as widens the choices for Q5.
4
Secondary-Current Protection
The bq40z50 provides secondary overcurrent and short-circuit protection, cell balancing, cell voltage
multiplexing, and voltage translation. The following discussion examines Cell and Battery Inputs, Pack and
FET Control, Temperature Output, and Cell Balancing.
4.1
Cell and Battery Inputs
Each cell input is conditioned with a simple RC filter, which provides ESD protection during cell connect
and acts to filter unwanted voltage transients. The resistor value allows some trade-off for cell balancing
versus safety protection.
The integrated cell balancing FETs allow the AFE to bypass cell current around a given cell or numerous
cells, effectively balancing the entire battery stack. External series resistors placed between the cell
connections and the VCx I/O pins set the balancing current magnitude. The intern FETs provide a 200-Ω
resistance (2 V < VDS < 4 V). Series input resistors between 100 Ω and 1 kΩ are recommended for
effective cell balancing.
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
9
Secondary-Current Protection
www.ti.com
The BAT input uses a diode (D1) to isolate and decouple it from the cells in the event of a transient dip in
voltage caused by a short-circuit event.
Also, as described previously in Section 2, the top and bottom nodes of the cells must be sensed at the
battery connections with a Kelvin connection to prevent voltage sensing errors caused by a drop in the
high-current PCB copper.
Figure 11. Cell and BAT Inputs
10
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
Secondary-Current Protection
www.ti.com
4.2
External Cell Balancing
Internal cell balancing can only support up to 10 mA. External cell balancing provide as another option for
faster cell balancing. For details, refer to the application note, Fast Cell Balancing Using External
MOSFET (SLUA420).
4.3
PACK and FET Control
The PACK and VCC inputs provide power to the bq40z50 from the charger. The PACK input also provides
a method to measure and detect the presence of a charger. The PACK input uses a 100-Ω resistor,
whereas the VCC input uses a diode to guard against input transients and prevents misoperation of the
date driver during short-circuit events.
Figure 12. bq40z50 PACK and FET Control
The N-channel charge and discharge FETs are controlled with 5.1-kΩ series gate resistors, which provide
a switching time constant of a few microseconds. The 10-MΩ resistors ensure that the FETs are off in the
event of an open connection to the FET drivers. Q4 is provided to protect the discharge FET (Q3) in the
event of a reverse-connected charger. Without Q4, Q3 can be driven into its linear region and suffer
severe damage if the PACK+ input becomes slightly negative.
Q4 turns on in that case to protect Q3 by shorting its gate to source. To use the simple ground gate
circuit, the FET must have a low gate turn-on threshold. If it is desired to use a more standard device,
such as the 2N7002 as the reference schematic, the gate should be biased up to 3.3 V with a high-value
resistor. The bq40z50 device has the capability to provide a current-limited charging path typically used for
low battery voltage or low temperature charging. The bq40z50 device uses an external P-channel, precharge FET controlled by PCHG.
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
11
Secondary-Current Protection
4.4
www.ti.com
Temperature Output
For the bq40z50 device, TS1, TS2, TS3, and TS4 provide thermistor drive-under program control. Each
pin can be enabled with an integrated 18-kΩ (typical) linearization pullup resistor to support the use of a
10-kΩ at 25°C (103) NTC external thermistor such as a Mitsubishi BN35-3H103. The reference design
includes four 10-kΩ thermistors: RT1, RT2, RT3, and RT4. The bq40z50 device supports up to four
external thermistors. Connect unused thermistor pins to VSS.
Figure 13. Thermistor Drive
4.5
LEDs
Three LED control outputs provide constant current sinks for the driving external LEDs. These outputs are
configured to provide voltage and control for up to 5 LEDs. No external bias voltage is required. Unused
LEDCNTL pins can remain open or they can be connected to VSS. The DISP pin should be connected to
VSS, if the LED feature is not used.
Figure 14. LEDs
12
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
Secondary-Current Protection
www.ti.com
4.6
Safety PTC Thermistor
The bq40z50 device provides support for a safety PTC thermistor. The PTC thermistor is connected
between the PTC pin and VSS. It can be placed close to the CHG/DSG FETs to monitor the temperature.
The PTC pin outputs a very small current, typical ~370 nA , and the PTC fault will be triggered at ~0.7 V
typical. A PTC fault is one of the permanent failure modes. It can only be cleared by a POR.
To disable this feature, connect a 10-kΩ resistor between PTC and VSS.
Figure 15. PTC Thermistor
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
13
Secondary-Overvoltage Protection
5
www.ti.com
Secondary-Overvoltage Protection
The bq294700 provides secondary-overvoltage protection and commands the chemical fuse to ignite if
any cell exceeds the internally referenced threshold. The peripheral components are Cell Inputs and Time
Delay Capacitor.
5.1
Cell Inputs
An input filter is provided for each cell input. This comprises the resistors R13, R14, R15, and R18 along
with capacitors C4, C5, C9, and C11. This input network is completely independent of the filter network
used as input to the bq40z50. To ensure independent safety functionality, the two devices must have
separate input filters.
Because the filter capacitors are implemented differentially, a low-voltage device can be used in each
case.
Figure 16. bq294700 Cell Inputs and Time-Delay Capacitor
5.2
Time-Delay Capacitor
C7 sets the time delay for activation of the output after any cell exceeds the threshold voltage. The time
delay is calculated as td = 1.2 V × DelayCap (μF)/0.18 μA.
14
bq40z50 Advanced Gas Gauge Circuit Design
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
Reference Design Schematic
www.ti.com
6
Reference Design Schematic
Figure 17 shows the bq40z50 reference design schematic.
C1
C2
0.1uF
0.1uF
4P
R1
3
2
Q1
FDN358P
1
300
3
2
1
R3
Q3
Si7116DN
10M
4
Q2
Si7116DN
10M
4
3
R2
SFDxxxx
Q4
2N7002K
1
2
1
2
3
PACK+
5
2
F1
5
1
FUSE
3
1
R5
Wake
1
R4
10M
R32
10K
5
2
1
1
CHGND
R7
R8
R9
R10
5.1K
10M
100
5.1K
For Thumbus-SMB
DSG
4P
C5
4
V4
CD
V3
VSS
V2
V1
0.1uF
CHG
7
2
3
SMBC
4
5
5
C12
AGND
C6
C7
0.1uF
0.1uF
C9
R16
R17
5.1K
5.1K
C8
0.1uF
10K
BAT
CHGND
2
BAT
BAT
C10
0.1uF
1
GND
PACK+
0.1uF
GND
0.1uF
R18
1
SMBD
RT1
1K
J6
1
1
1
0.1uF
6
9
R15
51K
8
7
3
1K
OUT
I2C_VOUT
1
2
R14
VDD
R12
10K
1
1
EP
C4
0.1uF
C3
1
R6
U2
BQ2947xyDSG
CHGND
R13
6
4
1
3
PACK+
3
FUSEPIN
100
1K
B
B'
S1
10K
Q5
Si1406DH
6
R11
A
A'
4P
J4
25
26
29
28
27
31
30
33
1
1K
32
BAT
2
1
FUSE
VCC
NC
DSG
PACK
CHG
PCHG
BAT
PWPD
0.1uF
4
C14
0.1uF
0.1uF
4
0.1uF
LEDCNTLA
SRN
SMBC
NC
SMBD
LED5
19
D7
D8
LED1
LED2
18
17
CHGND
NC
TS4
TS3
R25
200
100
R26
R27
200 1
2
100
2
1
R24
1
SMBD
4
1
TP12
B
B'
3
2
SMBD
GND
SRN
1
1
1
A
A'
S2
J7
1
SMBC
16
15
14
13
12
10
11
9
1
SRP
GND
R28
C19
R30
R31
DNP
100
100
Place RT1 close to Q2 and Q3.
C20
GND
GND
GND
GND
A
A'
S3
B
B'
DNP
1K
D3
D4
CHGND
C21
GND
DNP
1
0.1uF
D2
1
IC ground should be connected to the 1N cell tab.
R29
200
2
SHUTDOWN
GND SIDE
10K
C18
2
GND SIDE
RT5
10K
GND
MM3ZxxVyC
RT4
10K
VSS
CHGND
MM3ZxxVyC
RT3
10K
SMBC
LED DISPLAY
MM3ZxxVyC
1
1
RT2
SMBD
J2
GND
3
S
J3
SMBC
1
TP3
NT1
Net-Tie
2
1
1
2
D9
21
PRESorSHUTDN
GND
100
1
P
20
DISP
R23
1
AGND
1
1
SRP
BTP_INT
R22
100
2
LEDCNTLB
VC1
R21
100
31
8
VC2
TS2
2P P N P3 P y
7
0.1uF
22
LEDCNTLC
BQ40Z50RSM
LED4
s Pres
PACK+
23
PTC
U1
VC3
TS1
100
C17
PTCEN
VC4
VSS
2
6
C16
R20
1
1 1J5
5
C15
PBI
LED3
GND SIDE
3
D6
GND SIDE
2
24
D5
2
1
2.2uF
1
SMBC
C13
SMBD
D1
BAT 54HT1
PACK- ACK+
3
3
J1
PACK-
C11
Replace D1 and R9 with a 10 ohm resistor for single cell applications
CHGND
GND
R19
GND
0.001
Figure 17. bq40z50 Schematic
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
bq40z50 Advanced Gas Gauge Circuit Design
Copyright © 2012–2014, Texas Instruments Incorporated
15
Revision History
www.ti.com
Revision History
Changes from Original (November 2012) to A Revision ................................................................................................ Page
•
•
•
•
•
•
Changed Sony Chemical to Dexerials in the Chemical Fuse section. ............................................................. 3
Added paragraph and System Present Pull-Down Resistor image to the end of the first paragraph in the System Present
section. ..................................................................................................................................... 7
Changed two thermistors to four external thermistors in the first paragraph of the Temperature Ouput section. ......... 12
Added sentence to the end of the first paragraph in the Temperature Ouput section. ........................................ 12
Added two sentences to the first paragraph in the LEDs section. ................................................................ 12
Changed bq40z50 schematic. ......................................................................................................... 15
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
16
Revision History
SLUA660A – November 2012 – Revised September 2014
Submit Documentation Feedback
Copyright © 2012–2014, Texas Instruments Incorporated
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2014, Texas Instruments Incorporated
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Related manuals

Download PDF

advertising