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Texas Instruments TMCS1100EVM User guides
User's Guide
SBOU209 – August 2019
TMCS1100EVM
This user’s guide describes the characteristics, operation, and use of the TMCS1100 evaluation module
(EVM). This EVM is designed to evaluate the performance of the TMCS1100 voltage output isolated
bidirectional Hall-effect current sense amplifiers in a variety of configurations. Throughout this document,
the terms evaluation board, evaluation module, and EVM are synonymous with the TMCS1100EVM. This
document includes a schematic, reference printed-circuit board (PCB) layouts, and a complete bill of
materials (BOM).
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1
2
3
4
5
Contents
General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines ...................... 3
Overview ...................................................................................................................... 5
2.1
Kit Contents.......................................................................................................... 5
2.2
Related Documentation From Texas Instruments .............................................................. 5
Hardware...................................................................................................................... 6
3.1
Features .............................................................................................................. 6
3.2
Circuitry .............................................................................................................. 7
Operation ..................................................................................................................... 8
4.1
Measurements ...................................................................................................... 9
4.2
Advanced Measurement Tips.................................................................................... 10
Schematics, PCB Layout, and Bill of Materials......................................................................... 13
5.1
Schematics ......................................................................................................... 13
5.2
PCB Layout ........................................................................................................ 14
5.3
Bill of Materials .................................................................................................... 16
List of Figures
1
Low-Side Unidirectional Setup ............................................................................................. 8
2
Low-Side Bidirectional Setup............................................................................................... 8
3
Barrel-Tip Probe Connection
10
4
Parasitic Resistance Affecting Measurement
10
5
6
7
8
9
10
11
.............................................................................................
..........................................................................
Board Creepage and Clearance .........................................................................................
Layout With Best Creepage...............................................................................................
Schematic for A1 Device ..................................................................................................
Top Overlay .................................................................................................................
Top Layer ...................................................................................................................
Bottom Overlay .............................................................................................................
Bottom Layer ................................................................................................................
11
12
13
14
14
15
15
List of Tables
1
TMCS1100Ax Device Summary ........................................................................................... 5
2
TMCS1100EVM Kit Contents .............................................................................................. 5
3
Related Documentation ..................................................................................................... 5
4
Bill of Materials
.............................................................................................................
16
Trademarks
All trademarks are the property of their respective owners.
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General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
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1
General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
WARNING
Always follow TI’s setup and application instructions, including use of all interface components within their
recommended electrical rated voltage and power limits. Always use electrical safety precautions to help
ensure your personal safety and those working around you. Contact TI's Product Information Center
http://support/ti./com for further information.
Save all warnings and instructions for future reference.
WARNING
Failure to follow warnings and instructions may result in personal injury,
property damage or death due to electrical shock and burn hazards.
The term TI HV EVM refers to an electronic device typically provided as an open framed, unenclosed
printed circuit board assembly. It is intended strictly for use in development laboratory environments,
solely for qualified professional users having training, expertise and knowledge of electrical safety risks in
development and application of high voltage electrical circuits. Any other use and/or application are strictly
prohibited by Texas Instruments. If you are not suitable qualified, you should immediately stop from further
use of the HV EVM.
1. Work Area Safety
a. Keep work area clean and orderly.
b. Qualified observer(s) must be present anytime circuits are energized.
c. Effective barriers and signage must be present in the area where the TI HV EVM and its interface
electronics are energized, indicating operation of accessible high voltages may be present, for the
purpose of protecting inadvertent access.
d. All interface circuits, power supplies, evaluation modules, instruments, meters, scopes and other
related apparatus used in a development environment exceeding 50Vrms/75VDC must be
electrically located within a protected Emergency Power Off EPO protected power strip.
e. Use stable and nonconductive work surface.
f. Use adequately insulated clamps and wires to attach measurement probes and instruments. No
freehand testing whenever possible.
2. Electrical Safety
As a precautionary measure, it is always a good engineering practice to assume that the entire EVM
may have fully accessible and active high voltages.
a. De-energize the TI HV EVM and all its inputs, outputs and electrical loads before performing any
electrical or other diagnostic measurements. Revalidate that TI HV EVM power has been safely
de-energized.
b. With the EVM confirmed de-energized, proceed with required electrical circuit configurations,
wiring, measurement equipment connection, and other application needs, while still assuming the
EVM circuit and measuring instruments are electrically live.
c. After EVM readiness is complete, energize the EVM as intended.
WARNING
While the EVM is energized, never touch the EVM or its electrical
circuits, as they could be at high voltages capable of causing electrical
shock hazard.
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General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
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3. Personal Safety
a. Wear personal protective equipment (for example, latex gloves or safety glasses with side shields)
or protect EVM in an adequate lucent plastic box with interlocks to protect from accidental touch.
Limitation for safe use:
EVMs are not to be used as all or part of a production unit.
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Overview
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2
Overview
The TMCS1100 Hall-effect current sense amplifier (also called an isolated current-sense amplifier) senses
magnetic flux generated from current passing through the lead frame at common-mode voltages from 0
VDC to 600 VDC, independent of the supply voltage. Four fixed gains are available: 50 mV/A, 100 mV/A,
200 mV/A, and 400 mV/A. These devices operate from a single 3-V to 5.5-V power supply, drawing a
maximum of 5 mA of supply current per amplifier channel. The TMCS1100 is currently available in an 8pin, SOIC, surface-mount package. Table 1 lists the available gain options.
Table 1. TMCS1100Ax Device Summary
2.1
Product
Gain
TMCS1100A1
50 mV/A
TMCS1100A2
100 mV/A
TMCS1100A3
200 mV/A
TMCS1100A4
400 mV/A
Kit Contents
Table 2 lists the contents of the TMCS1100EVM kit. Contact the nearest Texas Instruments Customer
Support Center if any component is missing. TI highly recommends checking the TMCS1100 family
product folder on the TI website at www.ti.com for further information regarding this product.
Table 2. TMCS1100EVM Kit Contents
2.2
Item
Quantity
TMCS1100EVM Test Board
1
Related Documentation From Texas Instruments
Table 3 provides literature references for TI's integrated circuits used in the assembly of the
TMCS1100EVM. This user's guide is available from the TI website under literature number SBOU209. Any
letter appended to the literature number corresponds to the document revision that is current at the time of
the writing of this document. Newer revisions are available from www.ti.com or the Texas Instruments'
Literature Response Center at (800) 477-8924 or the Product Information Center at (972) 644-5580. When
ordering, identify the document by both title and literature number.
Table 3. Related Documentation
document
Literature Number
TMCS1100 product data sheet
SBOS820
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Hardware
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Hardware
The TMCS1100 is an isolated, current-sense op amp that provides ease-of-use and high performance.
The TMCS1100EVM is intended to provide basic functional evaluation of all TMCS1100 gain variants. The
fixture layout is not intended to be a model for the target circuit, nor is it laid out for electromagnetic
compatibility (EMC) testing. The TMCS1100EVM consists of one PCB that can be snapped apart into four
individual segments; one for each of the four gain variants:
• TMCS1100A1
• TMCS1100A2
• TMCS1100A3
• TMCS1100A4
3.1
Features
The layout of the TMCS1100EVM PCB is designed to provide the following features:
• Evaluation of all gain variants for the TMCS1100
• Ease-of-access to device pins with test points
• Evaluation of high-side and low-side configurations
• Buffered reference with a user-defined voltage divider
See the TMCS1100 data sheet for comprehensive information about the TMCS1100.
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Hardware
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3.2
Circuitry
This section summarizes the TMCS1100EVM components. For the following circuits, x = A to D for the A1
to A4 gain variants, respectively.
3.2.1
C1x, C2x, and C5x
C1x and C2x are 10-μF and 0.1-μF supply bypass capacitors, respectively, for the TMCS1100. C5x is the
0.1-μF bypass capacitor for the optional buffer amplifier. By default, C5x is not populated.
3.2.2
C3x, R1x, and TP2x
C3x and R1x are footprints for the optional output filter. Default values are 0 Ω and 10 pF. However, no
capacitor is installed. TP2x is the test point for the TMCS1100 output.
3.2.3
C4x, R2x, TP4x, TP9x, and J1x
C4x and R2x are footprints for the optional input filter. Default values are 0 Ω and 10 pF. However, no
capacitor is installed. TP4x serves as a test-point for the filtered input to the TMCS1100 VREF pin while
TP9x serves as a test point for the prefiltered input to the TMCS1100 VREF pin. J1x is a jumper that
conveniently allows the TMCS1100 reference to be shorted to ground, connected directly to an external
power supply, or shorted to a voltage set by a buffered voltage divider.
3.2.4
C6x, R3x, and R4x
C6x and R3x serve as a low-pass filter to the buffer amplifier. R3x and R4x serve as a voltage divider to
set the buffered voltage input to the TMCS1100 VREF pin.
3.2.5
T1x ,T2x, TP3x, and TP6x
T1x and T2x correspond to the high-current rated load connectors. By default, the EVM is only populated
with two of these connectors on the lowest gain variant A1, x = A. TP3x and TP6x are Kelvin connections
to probe the EVM inputs. The IS+ (TP3x) and IS– (TP6x) inputs accept a load that is converted to a
magnetic field sensed by a Hall element that produces a voltage. This voltage is amplified by the selected
device gain and is presented at the VOUT test point (TP2x). The acceptable load input max is 20 A for dc
measurements. However, for ac signals, the load can be significantly higher, and is bound by the safe
operating area (SOA) described in the TMCS1100 data sheet.
3.2.6
U1x
U1x is the TMCS1100 isolated current-sense amplifier. Four gain-option segments are supplied within the
TMCS1100EVM board. Each segment is populated with one of the available device gains. This
configuration enables users to test the devices and determine the best gain setting for a given application.
For x = A to D, the gain is 50 mV/A, 100 mV/A, 200 mV/A, and 400 mV/A, respectively.
• The TMCS1100 can be used for both unidirectional and bidirectional applications.
• A magnetic field is generated based on the load current that is connected across the inputs IS+ and
IS–, and flows through the TMCS1100 leadframe.
• The output voltage swing limitation and required load current sensing range are the key factors when
determining device selection.
• The selected device must allow the output voltage to remain within the acceptable range after the load
current is transduced and amplified by the respective device gain. The max output voltage must remain
within the range of 25 mV above ground to 100 mV below the supply voltage.
• Choose an appropriate gain to create the largest appropriate output swing, and to minimize error.
3.2.7
U2x
U2x is a SOT-23 footprint for a buffer amplifier. By default, this part is not populated. U2X is an amplifier
that must have a common-mode range and output-swing range that allows for a divided voltage of
interest. One example is the TLV6001IDBVR, which allows for a buffered voltage between 100 mV and
VCC – 100 mV.
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Operation
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Operation
The following are instructions to set up and use the TMCS1100EVM. For the following instructions, x = A
to D for the A1 to A4 gain variants, respectively. Figure 1 shows an example of a simple, low-side,
unidirectional setup on the A1 (50 mV/A) gain variant (x = A). For bidirectional measurements; either
connect jumper J1x to the buffer with a custom voltage divider set by the user, or connect an additional
external supply to the VREF SOURCE and GND test points, as shown in Figure 2. This device has
isolation; external supplies are distinguished by hot for load, cold for DUT supply, and REF for VREF
supply. Short the GND terminals for the cold and REF supplies together. The hot supply can be isolated
and at a different potential.
.
Cold Supply
3 V to 5 V
±
Figure 1. Low-Side Unidirectional Setup
Step 1.
Step 2.
Step 3.
Step 4.
Step 5.
+
±
Hot Supply
” 600 V
Electronic Load
Hot Supply
” 600 V
+
+
Electronic Load
+
±
+
±
Cold Supply
3 V to 5 V
±
VREF Supply
0 V to VCC
External Supply
or
Buffered Voltage Divider
Figure 2. Low-Side Bidirectional Setup
For greater maneuverable flexibility, break apart the EVM subboards along the score lines.
Otherwise, the board can be left intact.
Attach the high-current lug connectors to IS+ and IS– of the gain version to be tested.
Connect the terminals of an external cold supply to the GND and VCC test points on the EVM
gain variant of choice. Be sure to connect GND first and make sure that the external cold
supply is between 3 V and 5.5 V.
To set the VREF voltage, use an external REF supply, use a buffered voltage divider, or
short VREF to GND. When VREF is supplied by the buffered voltage divider, set the jumper
to short VREF to the buffer pin on connector J1x, and populate U2x, C5x, R3x, and R4x to
generate the desired reference point. When the VREF voltage is supplied by an external REF
supply, remove the jumper short from J1x, and apply a supply to the VREF SOURCE and
GND test points with a voltage set between GND and VCC.
Connect the input per Section 4.1.
WARNING
Do not leave EVM powered when unattended.
Hot surface. Contact may cause burns. Do not touch!
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4.1
Measurements
The following procedures are used to configure a measurement evaluation with an electronic load. For the
following instructions, x = A to D for the A1 to A4 gain variants, respectively.
Step 1. According to Figure 1, for a low-side measurement, connect the electronic load positive input
terminal to the positive terminal of a ≥ 20-A capable hot-supply. For a high-side
measurement, connect the electronic load positive input terminal to the load sourcing terminal
(IS+ or IS–) of the EVM. For high-side measurement of forward current, IS– sources to the
electronic load; for reverse current, IS+ sources to the load. Reverse current can only be
measured if VREF is set to a potential higher than GND.
Step 2. Connect the electronic load negative output terminal to the external hot supply GND terminal
for high-side measurements, or to the load sinking terminal of the EVM for low-side
measurements.
Step 3. For high-side measurements, connect the external supply to the load sinking terminal of the
EVM. Otherwise, for low-side measurements, connect the load sourcing terminal of the EVM
(IS+ or IS–) to the external supply gnd.
Step 4. Turn on all the connected supplies.
Step 5. Apply load with electronic load.
Step 6. Measure the output voltage at the VOUT test point.
NOTE: The output voltage is equal to the gain of the device multiplied by the load passing through
the leadframe of the DUT.
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4.2
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Advanced Measurement Tips
To measure the input load through the device, use the vias near the DUT that are spaced such that a
barrel tip oscilloscope connector can be inserted, as shown in Figure 3. The voltage differential across the
DUT leadframe can be quite small, depending on the load (VDIFF = ILOAD × 1.8 mΩ); therefore, the barrel tip
connection helps provide a cleaner signal that might otherwise be buried in noise. The vias are placed
behind the input load pins to form a Kelvin connection. This configuration helps to make sure that there is
no resistive path increasing the potential loss between test points and the entry point of current into the
pin of the device, as illustrated in Figure 4.
Barrel Tip
Load Current
Load Input
Figure 3. Barrel-Tip Probe Connection
§ 0 V le akage
1.8 mŸ
>> MŸ
>0V
>0V
§ 800 µŸ
Non-Kelvin Conne ction on In put Lo ad Side
Kelvin Conne ction on In put Lo ad Side
Figure 4. Parasitic Resistance Affecting Measurement
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These vias shorten the clearance distance between the hot and cold power planes; therefore, slots are cut
into the board around these vias to increase the local creepage distance between the hot and cold planes,
as indicated in Figure 5. Both clearance and creepage can have impact on the isolation between the two
planes. With clearance, the shortest distance between two conductive surfaces, there is a limitation of 4
mils between opposite sides imposed by the DUT. However, creepage, which is the surface distance
along the insulative surface between the conductive points, can be increased with surface etching or slots.
Consequently, to maximize the isolation while evaluating the EVM, enlarge the slots between these
planes, as shown in Figure 6.
Figure 5. Board Creepage and Clearance
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Original Slots
Improved Slot
Figure 6. Layout With Best Creepage
The device has isolation, and the hot and cold planes can experience a large delta in potential. Therefore,
use differential probes with an oscilloscope to monitor the potential at the DUT load input pins, instead of
setting a custom offset with multiple probes.
For evaluating performance when the DUT is subjected to quick current pulses, use short, large-gauge
wire, or short bus bars, to reduce the inductance between the hot-supply, load, and EVM. By minimizing
the inductance, the rate of load slew can be increased. If assessing temperature performance is desired,
use wide, thin bus bars to reduce the thermal sinking ability of the system, while not dramatically
increasing the inductance of the system.
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Schematics, PCB Layout, and Bill of Materials
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5
Schematics, PCB Layout, and Bill of Materials
NOTE: Board layouts are not to scale. These figures are intended to show how the board is laid out.
The figures are not intended to be used for manufacturing TMCS1100EVM PCBs.
5.1
Schematics
Figure 7 shows the schematic of the A1 subboard on the TMCS1100EVM PCB. Only the schematic for the
A1 (50 mV/A) gain variant is included as all variants use the same circuit and same PCB layout. All
components associated with the 50-mV/A TMCS1100 A1 gain variant have the letter A appended at the
end. The 100-mV/A A2 gain variant has B appended, the 200-mV/A A3 gain variant has C appended, and
the 400-mV/A A4 gain variant has a D appended.
C1A
VCC1
10µF
C2A
U1A
0.1uF
8
IS+
1
2
3
4
IS-
VS
7
OUT
6
VREF
IS+
IS+
ISIS-
R1A
OUT
0
VREF
C3A
10pF
5
GND
R2A
C4A
10pF
0
MCS1100A1DT
SH-J1A
3
2
1
VREF SOURCE
881545-2
J1
VCC1
C5A
VCC1
5
0.1uF
R3A
10.0k
4
3
1
V+
V-
2
U2
GND
R4A
10.0k
C6A
0.1uF
H1A
H2A
H3A
H4A
SJ61A6
SJ61A6
SJ61A6
SJ61A6
Figure 7. Schematic for A1 Device
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Schematics, PCB Layout, and Bill of Materials
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PCB Layout
Figure 8 through Figure 11 illustrate the PCB layers of the TMCS1100EVM.
Figure 8. Top Overlay
Figure 9. Top Layer
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Figure 10. Bottom Overlay
Figure 11. Bottom Layer
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Schematics, PCB Layout, and Bill of Materials
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Bill of Materials
Table 4 provides the parts list for the TMCS1100EVM.
Table 4. Bill of Materials
Designator
Quantity
Value
C1A, C1B, C1C, C1D
4
10uF
CAP, CERM, 10 uF, 10 V, +/- 10%, X7R, 0805
Description
0805
Package Reference
C2012X7R1A106K125AC
Part Number
TDK
Manufacturer
C2A, C2B, C2C, C2D
4
0.1uF
CAP, CERM, 0.1 uF, 25 V, +/- 10%, X6S, 0201
0201
GRM033C81E104KE14D
MuRata
C3A, C3B, C3C, C3D, C4A, C4B,
C4C, C4D
8
10pF
CAP, CERM, 10 pF, 10 V, +/- 10%, X7R, 0603
0603
0603ZC100KAT2A
AVX
H1A, H1B, H1C, H1D, H2A, H2B,
H2C, H2D, H3A, H3B, H3C, H3D,
H4A, H4B, H4C, H4D
16
BUMPER CYLIN 0.312" DIA BLK
Header, 1.27mm, 3x1, SMT
SJ61A6
3M
J1A, J1B, J1C, J1D
4
Header, 2.54mm, 3x1, Gold, SMT
Header, 2.54mm, 3x1, SMT
M20-8770342
Harwin
MP1, MP2
2
90283A537
McMaster-CARR
MP3, MP4
2
18-8 Stainless Steel Washer
WASHER_18-8
92141A029
McMaster-CARR
MP5, MP6
2
Medium-Strength Steel Hex Nut
NUT_1-4-20
95462A029
McMaster-CARR
R1A, R1B, R1C, R1D, R2A, R2B,
R2C, R2D
8
RES, 0, 1%, 0.1 W, AEC-Q200 Grade 0, 0603
0603
RMCF0603ZT0R00
Stackpole Electronics Inc
SH-J1A, SH-J1B, SH-J1C, SH-J1D
4
Shunt, 100mil, Gold plated, Black
0603
881545-2
TE Connectivity
T1A, T2A
2
Terminal 90A Lug
Mini Shunt, Body 2.5x1.27mm,
Height 3mm
CB70-14-CY
Panduit
TP1A, TP1B, TP1C, TP1D, TP2A,
TP2B, TP2C, TP2D, TP4A, TP4B,
TP4C, TP4D, TP5A, TP5B, TP5C,
TP5D, TP7A, TP7B, TP7C, TP7D,
TP8A, TP8B, TP8C, TP8D, TP9A,
TP9B, TP9C, TP9D
28
Test Point, Miniature, SMT
Testpoint_Keystone_Miniature
5015
Keystone
TP3A, TP3B, TP3C, TP3D, TP6A,
TP6B, TP6C, TP6D
8
Test Point, Miniature, SMT
Test Point, Miniature, SMT
5019
Keystone
U1A
1
50mV/A
MCS1100A1DT, D0008A (SOIC-8)
DSG0008A
TMCS1100A2DSG
Texas Instuments
U1B
1
100mV/A
MCS1100A2DT, D0008A (SOIC-8)
DSG0008A
TMCS1100A3DSG
Texas Instuments
U1C
1
200mV/A
MCS1100A3DT, D0008A (SOIC-8)
DSG0008A
TMCS1100A4DSG
Texas Instuments
U1D
1
400mV/A
MCS1100A4DT, D0008A (SOIC-8)
DSG0008A
TMCS1100A4DSG
Texas Instuments
C5A, C5B, C5C, C5D, C6A, C6B,
C6C, C6D
0
0.1uF
CAP, CERM, 0.1 uF, 50 V, +/- 10%, X7R, 0603
0603
06035C104KAT2A
AVX
R3A, R3B, R3C, R3D, R4A, R4B,
R4C, R4D
0
10.0k
RES, 10.0 k, 1%, 0.1 W, 0603
0603
RC0603FR-0710KL
Yageo
T1B, T1C, T1D, T2B, T2C, T2D
0
Terminal 90A Lug
CB70-14-CY
CB70-14-CY
Panduit
U2A, U2B, U2C, U2D
0
1-MHz, Low-Power Operational Amplifier for CostSensitive Systems, DBV0005A (SOT-23-5)
DBV0005A
TLV6001IDBVR
Texas Instruments
16
0
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