T3 23 BAP64-04W SO Silicon PIN diode Rev. 4.1 — 11 February 2019 1 Product data sheet Product profile 1.1 General description Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. 1.2 Features and benefits • • • • • • • High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance or applications up to 3 GHz AEC-Q101 qualified 1.3 Applications • RF attenuators and switches BAP64-04W NXP Semiconductors Silicon PIN diode 2 Pinning information Table 1. Discrete pinning Pin Description Simplified outline 1 anode 2 cathode 3 common connection Graphic symbol 3 3 2 1 1 aaa-019209 2 Top view 3 Ordering information Table 2. Ordering information Type number Package BAP64-04W 4 Name Description Version - plastic surface-mounted package; 3 leads SOT323 Marking Table 3. Marking code 5 Type number Marking code BAP64-04W 4W% Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BAP64-04W Product data sheet Symbol Parameter VR Conditions Min Max Unit continuous reverse voltage - 100 V IF continuous forward current - 100 mA Ptot total power dissipation - 240 mW Tstg storage temperature -65 +150 °C Tj junction temperature -65 +150 °C Tsp ≤ 90 °C All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 © NXP B.V. 2019. All rights reserved. 2 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode 6 Thermal characteristics Table 5. Thermal characteristics BAP64-04W Product data sheet Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 Typ Unit 250 K/W © NXP B.V. 2019. All rights reserved. 3 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode 7 Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR = 60 V - - 10 μA VR = 20 V - - 1 μA VR = 0 V - 0.52 - pF VR = 1 V - 0.37 - pF VR = 20 V - 0.23 0.35 pF Cd diode capacitance rD f = 1 MHz (see Figure 1) diode forward resistance f = 100 MHz (see Figure 2) IF = 0.5 mA [1] - 20 40 Ω IF = 1 mA [1] - 10 20 Ω IF = 10 mA [1] - 2 3.8 Ω IF = 100 mA [1] - 0.7 1.35 Ω τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA - 1.55 - μs LS series inductance IF = 10 mA; f = 100 MHz - 1.6 - nH [1] Guaranteed on AQL basis; inspection level S4, AQL 1.0 BAP64-04W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 © NXP B.V. 2019. All rights reserved. 4 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode 8 Graphical data aaa-030016 600 aaa-030017 103 rD (Ω) Cd (fF) 102 400 10 200 1 0 0 4 8 12 16 VR (V) 20 Tj = 25 °C; f = 1 MHz 10-1 10-1 -1 lF (mA) 102 Figure 2. Diode forward resistance as a function of forward current (typical values) aaa-030018 0 (1) 10 Tj = 25 °C; f = 100 MHz Figure 1. Diode capacitance as a function of reverse voltage (typical values) Lins (dB) 1 aaa-030019 0 ISL (dB) (2) -5 (3) (4) -2 -10 -3 -15 -4 -20 -5 0.5 1 1.5 2 2.5 3 f (GHz) -25 0.5 1 1.5 2 2.5 3 f (GHz) Diode inserted in series with a 50 Ω strip line circuit and biased via the analyzer T-network. Tamb = 25 °C. (1) IF = 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) I F = 0.5 mA Diode zero-biased and inserted in series with a 50 Ω strip line circuit. Tamb = 25 °C. Figure 3. Insertion loss of the diode in on-state as a function of frequency (typical values) Figure 4. Isolation of the diode in off-state as a function of frequency (typical values) BAP64-04W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 © NXP B.V. 2019. All rights reserved. 5 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode aaa-019208 150 IP2 (dB) 1800 MHz 100 900 MHz 50 0 10-1 1 IF (mA) 10 Tamb = 25 °C Figure 5. Second order intercept point as function of forward current; typical values BAP64-04W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 © NXP B.V. 2019. All rights reserved. 6 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode 9 Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC SOT323 JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Figure 6. Package outline SOD323 BAP64-04W Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 © NXP B.V. 2019. All rights reserved. 7 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode 10 Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BAP64-04W v.4.1 20190211 Product data sheet - BAP64-04W v.4 Modifications: • changed condition for reverse current for VR from 175 V to 60 V BAP64-04W v.4 20181213 Modifications: • Section 1.2 "Features and benefits" has been updated. • The "Legal information" pages have been updated. BAP64-04W v.3 20010129 BAP64-04W Product data sheet Product data sheet Product data sheet - - All information provided in this document is subject to legal disclaimers. Rev. 4.1 — 11 February 2019 BAP64-04W v.3 BAP64-04W v.2 © NXP B.V. 2019. All rights reserved. 8 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode 11 Legal information 11.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without BAP64-04W Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Rev. 4.1 — 11 February 2019 © NXP B.V. 2019. All rights reserved. 9 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 11.4 Trademarks BAP64-04W Product data sheet Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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All rights reserved. 10 / 11 BAP64-04W NXP Semiconductors Silicon PIN diode Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 Product profile .................................................... 1 General description ............................................1 Features and benefits ........................................1 Applications ........................................................1 Pinning information ............................................ 2 Ordering information .......................................... 2 Marking .................................................................2 Limiting values .................................................... 2 Thermal characteristics ......................................3 Characteristics .................................................... 4 Graphical data ..................................................... 5 Package outline ...................................................7 Revision history .................................................. 8 Legal information ................................................ 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2019. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 February 2019 Document identifier: BAP64-04W
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